CN113483651B - Resistance type flexible tensile strain sensor - Google Patents

Resistance type flexible tensile strain sensor Download PDF

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CN113483651B
CN113483651B CN202110675751.3A CN202110675751A CN113483651B CN 113483651 B CN113483651 B CN 113483651B CN 202110675751 A CN202110675751 A CN 202110675751A CN 113483651 B CN113483651 B CN 113483651B
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film layer
thin film
negative poisson
tensile strain
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CN113483651A (en
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弥胜利
李林芷
葛恒源
姚弘毅
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Shenzhen International Graduate School of Tsinghua University
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Shenzhen International Graduate School of Tsinghua University
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/16Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge
    • G01B7/18Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge using change in resistance

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  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)

Abstract

A resistance-type flexible tensile strain sensor comprises a middle thin film layer, a negative Poisson ratio structural layer and a conductive thin film layer, wherein the negative Poisson ratio structural layer comprises a chiral unit and an embedded unit of a negative Poisson ratio structure; wherein, when the sensor receives when tensile, the chiral unit takes place earlier and draws swelling deformation, and embedding unit rotates earlier and does not take place to draw swelling deformation when tensile is original, just takes place to draw swelling deformation gradually along with tensile increase of degree to there is the time difference that draws swelling deformation in the conductive thin layer that makes chiral unit and embedding unit's central part correspond. The whole structure of the sensor still has the negative Poisson ratio effect in a large stretching range, so that the high sensitivity of the sensor is maintained in the large stretching range.

Description

Resistance type flexible tensile strain sensor
Technical Field
The invention relates to a sensor, in particular to a resistance type flexible tensile strain sensor.
Background
In recent years, applications such as personalized health monitoring, human motion detection, soft body robotics, etc. have an increasing demand for flexible sensors that are scalable, skin-mountable, and wearable. For the research of the flexible sensor, the performance indexes of stretchability, sensitivity, durability and the like are fully considered, wherein the stretchability and the sensitivity are particularly important. At present, the main mechanisms for improving the stretchability and the sensitivity of the flexible sensor comprise the following three points: (1) adopting a nano composite material structure; (2) use of a break or overlap mechanism upon deformation; (3) use of crack or fracture structures. Although the above three mechanisms make a great contribution to the improvement of stretchability and sensitivity of the flexible sensor, it is still a challenge to develop a flexible sensor having both large stretchability and high sensitivity.
The conductive film of the traditional flexible tensile strain sensor has a positive Poisson ratio effect, namely, transverse compression can be generated under longitudinal stretching, so that conductive materials in the film are separated in the longitudinal direction and close to each other in the transverse direction, the separation degree of the conductive materials under stretching is reduced, and the improvement of sensitivity is limited. The mechanical metamaterial is a branch of the recent emerging metamaterial field, and mainly obtains enhanced or mechanical properties which cannot be obtained by natural materials, such as negative poisson ratio or negative compressibility, by elaborating the internal geometric structure. The negative poisson's ratio effect means that the material expands in both the stretching direction and the direction perpendicular to the stretching direction, so the characteristics of the negative poisson's ratio can make the conductive material far away from each other in the longitudinal direction and the transverse direction, thereby improving the sensitivity of the sensor. However, the high sensitivity of the existing sensor based on the negative poisson ratio structure can only be maintained in a certain range, because the negative poisson ratio effect is weakened or even lost after the negative poisson ratio structure unit exceeds a certain stretching degree, the sensitivity is reduced, the continuous high sensitivity effect in a large stretching range cannot be realized, and the requirement of application in a large deformation range cannot be met.
It is to be noted that the information disclosed in the above background section is only for understanding the background of the present application and thus may include information that does not constitute prior art known to a person of ordinary skill in the art.
Disclosure of Invention
The invention mainly aims to provide a resistance-type flexible tensile strain sensor based on a negative Poisson ratio structure and capable of keeping high sensitivity in a large tensile range, and solves the problems that a traditional flexible tensile strain sensor cannot simultaneously achieve high tensile property and high sensitivity and cannot continuously ensure high sensitivity in the large tensile range.
In order to achieve the purpose, the invention adopts the following technical scheme:
a resistance-type flexible tensile strain sensor comprises a middle thin film layer, a negative Poisson ratio structural layer and a conductive thin film layer, wherein the negative Poisson ratio structural layer comprises a chiral unit and an embedded unit of a negative Poisson ratio structure, the negative Poisson ratio structural layer is attached to one side of the middle thin film layer, the conductive thin film layer is attached to the other side of the middle thin film layer and corresponds to the central parts of the embedded unit and the chiral unit, and two ends of the conductive thin film layer are connected with electrodes; when the sensor is stretched, the chiral unit generates auxetic deformation firstly, the embedded unit rotates firstly at the beginning of stretching and does not generate auxetic deformation, and the auxetic deformation gradually occurs along with the increase of the stretching degree, so that the chiral unit and the conductive thin film layer corresponding to the central part of the embedded unit have auxetic deformation time difference.
The embedded unit comprises any one of a straight honeycomb structure unit, an inwards concave rhombic structure unit and a planetary structure unit.
The middle film layer is made of elastic dielectric materials.
The elastomeric dielectric material is Polydimethylsiloxane (PDMS).
The negative Poisson ratio structural layer is made of an elastic dielectric material.
The elastomeric dielectric material is Polydimethylsiloxane (PDMS).
The conductive film layer is a carbon nano tube film.
The electrode is a liquid metal material.
The liquid metal material is indium tin alloy.
The multiple embedded units are arranged on the middle thin film layer in an array mode, and adjacent embedded units are connected through the chiral units.
Compared with the traditional flexible tensile strain sensor, the invention has the advantages that:
according to the invention, the chiral unit and the structural units with the negative Poisson ratio effect, such as the back-straight honeycomb structure or the concave diamond structure, except the chiral unit are combined as the embedded units, so that the conductive film layer attached to the corresponding position on the other side of the middle film layer has time difference of tensile deformation, the flexible sensor can continuously maintain high sensitivity in a large tensile range, and the defect that the traditional flexible tensile strain sensor cannot continuously ensure high sensitivity in the large tensile range is overcome.
The beneficial effects of the invention include:
1. the invention provides a flexible tensile strain sensor with a composite negative Poisson ratio structure based on a chiral unit and an embedded unit, which can realize transverse expansion when the flexible tensile strain sensor is longitudinally stretched, so that conductive materials in a conductive film of the flexible tensile strain sensor can be well separated, and the sensitivity is further improved. Meanwhile, due to the sequence of the negative Poisson ratio deformation of the chiral unit and the embedded unit, the whole structure of the sensor still has the negative Poisson ratio effect in a large stretching range, and the high sensitivity of the sensor is kept in the large stretching range.
2. The invention can obtain different measuring range ranges with continuous high sensitivity by selecting and adjusting the structural shapes and structural parameters of the manual unit and the embedded unit, can realize multipurpose use, has wide use range and meets different use requirements.
3. The resistance type tensile strain sensor provided by the invention is simple in manufacturing process, reusable and good in economical efficiency.
The invention solves the problems that the traditional flexible tensile strain sensor can not simultaneously have high stretchability and high sensitivity and can not continuously ensure the high sensitivity in a large tensile range. The chiral unit with the negative Poisson ratio and the embedded unit with the negative Poisson ratio effect like a straight honeycomb structure are combined and designed, so that the tensile deformation of the chiral unit and the embedded unit have certain sequence, the large stretchability of the embedded unit is ensured, the whole structure has the negative Poisson ratio effect in a large tensile range, and the continuous high sensitivity of the sensor in the large tensile strain range is realized.
Drawings
FIG. 1 is a diagram of a sensor array according to an embodiment of the present invention.
FIG. 2 is a diagram of a sensor unit in accordance with one embodiment of the present invention.
Fig. 3 is a schematic diagram of signal output of a conductive thin film layer according to an embodiment of the invention.
FIG. 4 is a graph showing the variation of the total Poisson's ratio during stretching of a chiral unit according to an embodiment of the present invention.
FIG. 5 is a schematic diagram of the deformation degree of the chiral units and the embedded units in the stretching process according to an embodiment of the present invention.
Detailed Description
The embodiments of the present invention will be described in detail below. It should be emphasized that the following description is merely exemplary in nature and is not intended to limit the scope of the invention or its application.
It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or be indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or be indirectly connected to the other element. In addition, the connection may be for either a fixed or coupled or communicating function.
It is to be understood that the terms "length," "width," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like are used in an orientation or positional relationship indicated in the drawings to facilitate the description of the embodiments of the invention and to simplify the description, and are not intended to indicate or imply that the device or element so referred to must have a particular orientation, be constructed in a particular orientation, and be constructed in a particular manner of operation, and are not to be construed as limiting the invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the embodiments of the present invention, "a plurality" means two or more unless specifically limited otherwise.
Referring to fig. 1 to 3, an embodiment of the present invention provides a resistive flexible tensile strain sensor, including a middle thin film layer 1, a negative poisson's ratio structural layer 2, and a conductive thin film layer 3, where the negative poisson's ratio structural layer 2 includes a chiral unit 4 and an embedded unit 5, the negative poisson's ratio structural layer 2 is attached to one side of the middle thin film layer 1, the conductive thin film layer 3 is attached to the other side of the middle thin film layer 1 and corresponds to the central portions of the embedded unit 5 and the chiral unit 4, and two ends of the conductive thin film layer 3 are connected to electrodes; when the sensor is stretched, the chiral unit 4 firstly generates auxetic deformation, the embedded unit 5 firstly rotates and does not generate auxetic deformation when the sensor is initially stretched, and the auxetic deformation gradually occurs along with the increase of the stretching degree, so that the chiral unit 4 and the conductive thin film layer 3 corresponding to the central part of the embedded unit 5 have time difference of auxetic deformation.
In various embodiments, the embedded unit 5 may adopt any one of a straight honeycomb structure unit, a concave diamond structure unit, a planetary structure unit and other negative poisson ratio structures.
Referring to fig. 1 and 2, in a preferred embodiment, a plurality of the embedded units are arranged in an array on the middle thin film layer, and adjacent embedded units are connected by the chiral unit.
According to the invention, the chiral unit and other units with negative Poisson ratio effect, such as a straight honeycomb structure or an inwards concave rhombic structure, are embedded and combined, and the stretching deformation of the chiral unit and the embedded unit has a certain time difference by utilizing the rotation effect of the chiral unit and the embedded unit, so that when the negative Poisson ratio effect of the chiral unit is weakened and even the negative Poisson ratio effect is lost, the embedded unit still has good negative Poisson ratio effect, and further, the continuous high sensitivity of the sensor in a large stretching strain range is realized.
Specific embodiments of the present invention are further described below.
A resistance type flexible tensile strain sensor based on a negative Poisson ratio structure and capable of keeping high sensitivity in a large tensile range is shown in the figures 1 and 2, wherein a sensor array is shown in figure 1, and a sensor unit is shown on the left side of figure 2. The resistance-type flexible tensile strain sensor mainly comprises three parts: the negative poisson ratio structural layer comprises a chiral unit 4 and an embedded unit 5, the embedded unit can comprise units with a negative poisson ratio, such as a straight honeycomb structural unit, an inwards concave rhombic structural unit, a planet structural unit and the like, and the embedded unit 5 adopts a straight honeycomb structural unit in the graph 1. The middle thin film layer 1 is attached to one side of the negative poisson ratio structural layer 2, and the conductive thin film layer 3 is attached to one side, different from the side where the negative poisson ratio structural layer 2 is located, of the middle thin film layer 1 and corresponds to the positions of the central parts of the embedding unit 5 and the chiral unit 4. The conductive film layer 3 has electrodes 31, 32 at its two ends, which can be liquid metal such as indium-tin alloy, and lead out metal wires 33, 34 respectively to measure the resistance change of the conductive film layer 3 during the stretching process, as shown in fig. 3. When the sensor is stretched longitudinally, the sensor expands transversely, so that the conductive materials in the conductive film layer 3 are sufficiently separated, thereby improving the sensitivity. And the conductive film layer 3 corresponding to the central part of the chiral unit 4 can firstly generate the stretching deformation, and the conductive film layer 3 corresponding to the central part of the embedded unit 5 can firstly rotate and then generate the stretching deformation, so that the continuous high sensitivity of the sensor in a large stretching strain range is realized through the time difference of the stretching deformation.
Wherein the middle film layer is an elastic dielectric material, such as Polydimethylsiloxane (PDMS).
Wherein, the negative Poisson ratio structure layer is an elastic dielectric material, such as Polydimethylsiloxane (PDMS).
Wherein the conductive film layer is a carbon nanotube film.
The negative Poisson ratio structural layer 2 can be prepared by firstly manufacturing a corresponding mould by using a 3D printing technology, then casting a sufficient mixture of PDMS and a curing agent thereof, curing for 6 hours in an environment of 40 ℃, and finally demoulding. The middle film layer 1 can be prepared into a PDMS film with the thickness of about 100 micrometers by spin coating a sufficient mixture of PDMS and a curing agent thereof and curing for 30 minutes at 80 ℃. The conductive film layer 3 is prepared by mixing single-wall carbon nanotube powder and a dispersing agent thereof in a mass ratio of 9. And centrifuging the carbon nanotube solution subjected to ultrasonic treatment at 15 ℃ for half an hour at the rotating speed of 8000rpm, dripping supernatant of the centrifuged carbon nanotube solution at the corresponding position of the middle thin film layer 1, and naturally drying to obtain the conductive thin film layer 3.
Taking a combined unit of the negative poisson's ratio structural layer 2 as shown in fig. 2 as an example, when the combined unit starts to be subjected to a vertical pulling force, the chiral unit 4 generates auxetic deformation and simultaneously rotates clockwise, and at this time, the embedded unit 5 rotates counterclockwise and does not generate auxetic deformation. As shown in fig. 5, in the stretching process, the chiral unit may first undergo auxetic deformation, the embedded unit does not undergo auxetic deformation at the beginning of stretching, and the embedded unit gradually undergoes auxetic deformation with the increase of the stretching degree, and the deformation degree is smaller than that of the chiral unit. As the longitudinal tensile strain reaches a certain degree, the negative poisson's ratio effect of the chiral units 4 decreases, as shown in fig. 4. The carbon nanotube separation effect in the conductive thin film layer 3 at the corresponding position is weak, thereby causing a decrease in sensitivity at this position. And after the embedded unit 5 rotates anticlockwise to a certain degree, the embedded unit starts to generate expansion deformation, namely after the negative Poisson ratio effect of the chiral unit is reduced, the embedded unit still keeps good negative Poisson ratio effect, the conductive film layer 3 at the embedded unit still has high sensitivity, and in the stretching process, the chiral unit 4 and the embedded unit 5 are selected to have a strain range with good negative Poisson ratio effect, so that continuous high sensitivity in a large stretching strain range of the sensor is realized.
Compared with the prior art, the invention has the advantages that:
1. the negative Poisson's ratio characteristic of the mechanics metamaterial is applied to the flexible sensor, and the stretchability and the sensitivity of the flexible sensor are effectively improved.
2. The chiral unit and other units with negative Poisson ratio effect, such as a straight honeycomb structure or an inwards concave rhombic structure, are embedded and combined to design, so that the tensile deformation of the units has certain sequence, and the continuous high sensitivity of the sensor in a large tensile strain range is further realized.
3. Compared with the traditional flexible sensor, the flexible sensor has high stretchability and high sensitivity, has no redundant structure, and can obtain different stretching ranges by adjusting the structural parameters of the negative Poisson's ratio structural unit, thereby obtaining different measuring ranges with high sensitivity.
4. The invention can adopt different chiral units and embedded units for combination, has various structures, simple manufacture and environmental friendliness.
The background of the present invention may contain background information related to the problem or environment of the present invention and does not necessarily describe the prior art. Accordingly, the inclusion in the background section is not an admission of prior art by the applicant.
The foregoing is a more detailed description of the invention in connection with specific/preferred embodiments and is not intended to limit the practice of the invention to those descriptions. It will be apparent to those skilled in the art that various substitutions and modifications can be made to the described embodiments without departing from the spirit of the invention, and these substitutions and modifications should be considered to fall within the scope of the invention. In the description herein, references to the description of the term "one embodiment," "some embodiments," "preferred embodiments," "an example," "a specific example," or "some examples" or the like are intended to mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Various embodiments or examples and features of various embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction. Although embodiments of the present invention and their advantages have been described in detail, it should be understood that various changes, substitutions and alterations can be made herein without departing from the scope of the claims.

Claims (10)

1. A resistance-type flexible tensile strain sensor is characterized by comprising a middle thin film layer, a negative Poisson ratio structural layer and a conductive thin film layer, wherein the negative Poisson ratio structural layer comprises a chiral unit and an embedded unit of a negative Poisson ratio structure, the negative Poisson ratio structural layer is attached to one side of the middle thin film layer, the conductive thin film layer is attached to the other side of the middle thin film layer and corresponds to the central parts of the embedded unit and the chiral unit, and two ends of the conductive thin film layer are connected with electrodes; the chiral unit and the embedded unit have negative Poisson ratio deformation sequentiality, when the sensor is stretched, the chiral unit generates auxetic deformation firstly, the embedded unit rotates firstly and does not generate auxetic deformation when stretching is started, and the auxetic deformation gradually occurs along with the increase of the stretching degree, so that the chiral unit and the conductive thin film layer corresponding to the central part of the embedded unit have time difference of auxetic deformation.
2. The resistive flexible tensile strain sensor of claim 1, wherein the embedded unit comprises any one of a straight honeycomb structure unit, a concave diamond structure unit, and a planetary structure unit.
3. The resistive flexible tensile strain sensor of claim 1 or 2, wherein the intermediate thin film layer is an elastic dielectric material.
4. The resistive flexible tensile strain sensor of claim 3, wherein the elastic dielectric material is Polydimethylsiloxane (PDMS).
5. The resistive flexible tensile strain sensor of claim 1 or 2, wherein the negative poisson's ratio structural layer is an elastic dielectric material.
6. The resistive flexible tensile strain sensor of claim 5, wherein the elastic dielectric material is Polydimethylsiloxane (PDMS).
7. The resistive flexible tensile strain sensor of any of claims 1 to 2, wherein the conductive thin film layer is a carbon nanotube film.
8. The resistive flexible tensile strain sensor of any of claims 1 to 2, wherein the electrode is a liquid metal material.
9. The resistive flexible tensile strain sensor of claim 8, wherein the liquid metal material is an indium tin alloy.
10. The resistive flexible tensile strain sensor of any of claims 1 to 2, wherein a plurality of the embedded units are arranged in an array on the middle thin film layer, and adjacent embedded units are connected by the chiral unit.
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KR101898604B1 (en) * 2015-11-30 2018-09-13 재단법인 멀티스케일 에너지시스템 연구단 Highly sensitive sensor comprising linear crack pattern and process for preparing same
CN110514331A (en) * 2019-08-14 2019-11-29 东华大学 Highly sensitive, big elongation strain sensor and its application based on auxetic structure
CN111202316A (en) * 2020-02-18 2020-05-29 南京工业大学 Watch with negative Poisson ratio effect and design method thereof
CN112252507B (en) * 2020-10-15 2022-02-08 中国人民解放军军事科学院国防科技创新研究院 Negative Poisson ratio structure based on flexible hinge
CN112432589B (en) * 2020-11-30 2022-06-24 中南大学 Parallel flexible strain sensor and preparation method thereof

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