CN113463181A - Semiconductor monocrystalline silicon growth device - Google Patents
Semiconductor monocrystalline silicon growth device Download PDFInfo
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- CN113463181A CN113463181A CN202111032685.4A CN202111032685A CN113463181A CN 113463181 A CN113463181 A CN 113463181A CN 202111032685 A CN202111032685 A CN 202111032685A CN 113463181 A CN113463181 A CN 113463181A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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Abstract
The invention discloses a semiconductor monocrystalline silicon growth device, belonging to the field of semiconductor manufacturing, comprising a monocrystalline silicon furnace body, wherein a direction-adjusting adsorption cylinder positioned between a graphite heater and a silicon melting crucible is fixedly arranged in the monocrystalline silicon furnace body, the direction-adjusting adsorption cylinder can perform an isolation effect, so that SiO gas can not be close to the graphite heater, further the generation of carbon monoxide is reduced, and the mixed gas flow at the upper side in the monocrystalline silicon furnace body can be subjected to adsorption circulation by matching of an X-type zeolite molecular sieve, a micropore one-way adsorption plate and a reflux air pump group, so that the gas flow at the periphery of crystalline silicon is increased while the carbon monoxide is effectively removed, convection is formed with introduced argon, the generated carbon monoxide is dispersed and isolated, the generation of carbon is reduced, the pollution of carbon to the crystalline silicon is reduced, and the preparation quality of a monocrystalline silicon rod is improved, thereby improving the conductive quality, reducing the rework rate and improving the economic benefit of the manufacture.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor monocrystalline silicon growing device.
Background
The semiconductor refers to a material having a conductivity between a conductor and an insulator at normal temperature. Semiconductor materials generally include elements such as silicon, germanium, selenium, and tin oxide, and silicon is used in many cases. Semiconductor manufacturing processes that use elemental silicon as a starting material typically include: polysilicon-zone melting or straight pulling-monocrystalline silicon rod-rolling, cutting, grinding and polishing-silicon chip. Among them, the process of manufacturing a single crystal silicon rod is also called single crystal silicon growth, and the most common method of single crystal growth is pulling a single crystal.
There are various specific processes for pulling a single crystal, and a czochralski method, a transverse pulling method, a crucible-less pulling method, and the like are commonly used, and among them, the czochralski method is the most widely used process. During the growth of the czochralski silicon, high-temperature quartz in a monocrystalline silicon furnace reacts with a graphite heating device to generate SiO and CO, wherein CO gas is not easy to volatilize, most of CO gas enters silicon melt to react with silicon melt to generate simple substance carbon and SiO, most of SiO gas volatilizes from the surface of the melt, carbon is left in the silicon melt and finally enters crystalline silicon, and carbon enters the crystalline silicon to pollute a monocrystalline silicon rod and reduce the conductive quality.
In the prior art, the argon gas outlet of the monocrystalline silicon furnace is changed, the circulating flow path of SiO gas in the furnace is adjusted, the contact range of the SiO gas and a high-temperature graphite element is reduced, the generation of CO gas is further reduced, and the purpose of reducing crystalline silicon pollution is achieved.
Disclosure of Invention
1. Technical problem to be solved
Aiming at the problems in the prior art, the invention aims to provide a semiconductor monocrystalline silicon growing device, which can isolate a graphite heater and a silicon melting crucible in a monocrystalline silicon furnace body through a direction-adjusting adsorption cylinder, so that SiO gas cannot be close to the graphite heater, further the generation of carbon monoxide is reduced, and through the matching of an X-type zeolite molecular sieve, a micropore one-way adsorption plate and a backflow air pump set, the adsorption circulation of mixed air flow at the upper side in the monocrystalline silicon furnace body can be carried out, the carbon monoxide is effectively removed, meanwhile, the air flow at the periphery of crystalline silicon is increased, convection is formed with introduced argon, the generated carbon monoxide is dispersed and isolated, so that the carbon monoxide is far away from the crystalline silicon, further the amount of the carbon entering silicon melt is reduced, the generation of the carbon is reduced, the pollution of the carbon to the monocrystalline silicon rod is reduced, the preparation quality of the monocrystalline silicon rod is improved, and the conductive quality of the monocrystalline silicon rod is further improved, reducing the rework rate and improving the economic benefit of manufacturing.
2. Technical scheme
In order to solve the above problems, the present invention adopts the following technical solutions.
A semiconductor monocrystalline silicon growth device comprises a monocrystalline silicon furnace body, a graphite heater arranged in the monocrystalline silicon furnace body and a silicon melting crucible matched with the graphite heater, wherein a direction-adjusting adsorption cylinder positioned between the graphite heater and the silicon melting crucible is fixedly arranged in the monocrystalline silicon furnace body, the upper end of the direction-adjusting adsorption cylinder is fixedly connected with a microporous one-way adsorption plate, the upper inner wall of the microporous one-way adsorption plate is fixedly connected with an X-type zeolite molecular sieve, the lower inner wall of the microporous one-way adsorption plate is connected with an extrusion regeneration assembly matched with the X-type zeolite molecular sieve, the upper end of the microporous one-way adsorption plate is fixedly connected with a plurality of one-way pressure pipes communicated with the microporous one-way adsorption plate, the lower end of each one-way pressure pipe is communicated with the X-type zeolite molecular sieve, the lower end of the microporous one-way adsorption plate is fixedly connected with a plurality of air suction branch pipes communicated with the microporous one-way adsorption plate, and the other end of each air suction branch pipe is fixedly connected with an adsorption ring communicated with the microporous one-way pressure pipe, the upper side of the outer end of the monocrystalline silicon furnace body is fixedly connected with a pair of backflow air pump sets communicated with the monocrystalline silicon furnace body, the input ends of the backflow air pump sets are matched with the adsorption rings, the graphite heater and the silicon melting crucible in the monocrystalline silicon furnace body are isolated by adjusting the direction of the adsorption cylinder, so that SiO gas cannot be close to the graphite heater, the generation of carbon monoxide is reduced, the mixed airflow at the upper side in the monocrystalline silicon furnace body can be subjected to adsorption circulation through the matching of the X-type zeolite molecular sieve, the microporous one-way adsorption plate and the backflow air pump sets, carbon monoxide is effectively removed, the airflow flow at the periphery of the crystalline silicon is increased, convection is formed with the introduced argon, the generated carbon monoxide is dispersed and isolated, the carbon monoxide is far away from the crystalline silicon, the amount of the carbon entering the silicon melt is reduced, the generation of the carbon is reduced, the pollution of the carbon to the crystalline silicon is reduced, and the preparation quality of the monocrystalline silicon rod is improved, thereby improving the conductive quality, reducing the rework rate and improving the economic benefit of the manufacture.
Further, a plurality of one-way shelves strips of one-way pressurization pipe inner wall fixedly connected with, one-way shelves strip other end fixedly connected with circle core fagging, circle core fagging outer end fixedly connected with and the one-way flexible one-way sealing ring of one-way pressurization pipe inner wall looks butt, and flexible one-way sealing ring is located one-way shelves strip downside, through the effect of flexible one-way sealing ring and one-way shelves strip for one-way pressurization pipe has the effect of one-way air admission, effectively avoids the backward flow of carbon monoxide gas, reduces the outlying carbon monoxide content of crystalline silicon, and then effectively reduces the contact of carbon monoxide and crystalline silicon, reduces the conversion of carbon monoxide.
Furthermore, one-way shelves strip lower extreme fixedly connected with homodyne separation blade, and homodyne separation blade lower extreme and flexible one-way sealing ring upper end looks butt, one-way shelves strip and homodyne separation blade limit the direction that flexible one-way sealing ring warp, and then effectively avoid near the leakage of graphite heater carbon monoxide, and then improve the result of use of flexible one-way sealing ring.
Further, the extrusion regeneration subassembly is including the hollow welt of regeneration, a plurality of hollow welts of regeneration of inner wall fixedly connected with under the one-way adsorption plate of micropore, and the hollow welt of regeneration is the interval setting with the branch pipe of breathing in, the inner fixedly connected with of hollow welt of regeneration is located the shrink extrusion bag of transferring to the adsorption cylinder, hollow welt of regeneration and shrink extrusion bag are all filled with the regeneration salt powder, hollow welt upper end fixedly connected with of regeneration rather than the bulk cargo taper pipe that switches on mutually, and in bulk cargo taper pipe upper end extended to X type zeolite molecular sieve, through the setting of extrusion regeneration subassembly, can adsorb the saturation back at X type zeolite molecular sieve, carry out regeneration to X type zeolite molecular sieve for X type zeolite molecular sieve can recycle, reduces the absorption cost, improves X type zeolite molecular sieve's life.
Furthermore, a plurality of guide strips are fixedly connected in the X-type zeolite molecular sieve and fixedly connected with the upper end of the bulk conical tube, and the guide strips enlarge the flowing range of the regenerated salt powder in the X-type zeolite molecular sieve, so that the regeneration efficiency is effectively improved, the regeneration reaction time is shortened, the continuity of the adsorption effect of the X-type zeolite molecular sieve is improved, and the X-type zeolite molecular sieve is effectively suitable for the continuous preparation of the growth of semiconductor monocrystalline silicon.
Further, the shrinkage extrusion bag is fixedly connected with a material homogenizing ring communicated with the shrinkage extrusion bag, the lower end of the material homogenizing ring is fixedly connected with a material supplementing shrinkage pipe communicated with the material homogenizing ring, and the other end of the material supplementing shrinkage pipe penetrates through the adsorption cylinder and the monocrystalline silicon furnace body once and is communicated with a material supplementing box.
Furthermore, a controller electrically connected with the single crystal silicon furnace body is fixedly installed at the left end of the single crystal silicon furnace body, a regeneration detection subsystem is arranged in the controller and comprises a regeneration data processing unit, the input end of the regeneration data processing unit is connected with a carbon monoxide concentration sensor, the carbon monoxide concentration sensor is installed in the X-type zeolite molecular sieve, the output end of the regeneration data processing unit is respectively connected with a regeneration extrusion unit and a regeneration salt powder supplement unit, the regeneration salt powder supplement unit is electrically connected with a pump of a material supplement box through a lead, the automation and the intellectualization of the regeneration process are effectively improved through the arrangement of the regeneration detection subsystem, the adsorption capacity of the X-type zeolite molecular sieve is conveniently and accurately adjusted, and the circulating backflow of carbon monoxide caused by the adsorption saturation of the X-type zeolite molecular sieve is effectively avoided, and through automatic detection control, effectively reduce artificial error, improve preparation efficiency.
Furthermore, the inner wall fixedly connected with contracts the bag under and contracts the strip with the inductance of inner wall connection on the hollow welt of regeneration, the output of regeneration extrusion unit passes through wire and inductance and contracts strip electric connection, and inductance contracts the strip and can drive the shrink extrusion bag and produce the shrink for shrink extrusion bag produces the extrusion force, and then extrudes into regeneration salt powder in X type zeolite molecular sieve, makes it produce regeneration reaction to X type zeolite molecular sieve under high temperature, improves X type zeolite molecular sieve's life, keeps its absorptive continuous validity.
Furthermore, a diversion adsorption cavity is formed in the direction-adjusting adsorption cylinder, a plurality of diversion air holes communicated with the diversion adsorption cavity are formed in the lower side of the inner wall of the direction-adjusting adsorption cylinder, a plurality of one-way air film holes communicated with the diversion adsorption cavity are formed in the upper side of the outer wall of the direction-adjusting adsorption cylinder, and the gas near the silicon melting crucible forms one-way circulation through the cooperation of the diversion adsorption cavity, the diversion air holes and the one-way air film holes, rapidly enters the diversion adsorption cavity under the action of argon gas, so that the time of the carbon monoxide staying near the silicon melting crucible is shortened, the diffusion effect of the carbon monoxide is further reduced, the upward movement of the carbon monoxide is reduced, and the carbon pollution of the silicon single crystal rod is effectively avoided.
Furthermore, the exhaust pipes are arranged on the lower sides of the left end and the right end of the single crystal silicon furnace body and matched with the one-way air film holes, backflow of carbon monoxide near the graphite heater is effectively reduced through the matching of the one-way air film holes and the exhaust pipes, and the exhaust efficiency is improved.
3. Advantageous effects
Compared with the prior art, the invention has the advantages that:
(1) this scheme is kept apart through transferring to an absorption section of thick bamboo to the inside graphite heater of single crystal silicon furnace body and silicon melting crucible, make SiO gas can not be close to graphite heater, and then reduce the formation of carbon monoxide, and through the cooperation of X type zeolite molecular sieve, micropore one-way adsorption plate and backward flow air pump group, can adsorb the circulation to the air current of the inside upside of single crystal silicon furnace body, when effectively getting rid of carbon monoxide, increase the outlying air flow of crystalline silicon, form the convection current with the argon gas that lets in, disperse the isolation to the carbon monoxide that generates, make it keep away from crystalline silicon, and then reduce its volume that gets into the silicon melt, reduce the formation of carbon, reduce carbon and pollute crystalline silicon, improve the preparation quality of single crystal silicon rod, and then improve its electrically conductive quality, reduce the rate of doing over again, improve the economic benefits of its preparation.
(2) Through the effect of flexible one-way sealing ring and one-way shelves strip for one-way pressurization pipe has the effect of one-way air admission, effectively avoids the backward flow of carbon monoxide gas, reduces the outlying carbon monoxide content of crystalline silicon, and then effectively reduces the contact of carbon monoxide and crystalline silicon, reduces the conversion of carbon monoxide.
(3) The one-way baffle strips and the force-equalizing baffle sheets limit the deformation direction of the flexible one-way sealing ring, so that the leakage of carbon monoxide near the graphite heater is effectively avoided, and the using effect of the flexible one-way sealing ring is improved.
(4) Through the arrangement of the extrusion regeneration assembly, the X-type zeolite molecular sieve can be regenerated after the X-type zeolite molecular sieve is adsorbed and saturated, so that the X-type zeolite molecular sieve can be recycled, the adsorption cost is reduced, and the service life of the X-type zeolite molecular sieve is prolonged.
(5) The flow guide strip line increases the flowing range of the regenerated salt powder in the regeneration device, thereby effectively improving the regeneration efficiency, shortening the regeneration reaction time, improving the continuity of the adsorption effect of the X-type zeolite molecular sieve and being effectively suitable for the continuous preparation of the growth of the semiconductor monocrystalline silicon.
(6) The automation and the intellectualization of the regeneration process are effectively improved through the arrangement of the regeneration detection subsystem, the adsorption capacity of the X-type zeolite molecular sieve is conveniently and accurately adjusted, the circulating reflux of carbon monoxide caused by the adsorption saturation of the X-type zeolite molecular sieve is effectively avoided, the manual error is effectively reduced through automatic detection control, and the preparation efficiency is improved.
(7) Make near the gas formation one-way circulation of melting silicon crucible through the cooperation in water conservancy diversion absorption chamber, water conservancy diversion gas pocket and one-way gas film hole, get into water conservancy diversion absorption intracavity rapidly under the effect of argon gas, reduce its time of staying near melting silicon crucible, and then reduce its diffusion effect, reduce shifting up of carbon monoxide, effectively avoid the carbon pollution of single crystal silicon rod.
Drawings
FIG. 1 is a schematic cross-sectional front view of the present invention;
FIG. 2 is a schematic diagram of the structure at A in FIG. 1 according to the present invention;
FIG. 3 is a schematic diagram of the direction-adjusting adsorption cylinder and X-type zeolite molecular sieve matching axial structure of the present invention;
FIG. 4 is a schematic diagram of the explosion structure of the microporous unidirectional adsorption plate and the extrusion regeneration assembly;
FIG. 5 is a schematic view of the axial structure of the microporous unidirectional adsorption plate of the present invention;
FIG. 6 is a schematic view of the explosion structure of the unidirectional pressurizing pipe of the present invention;
FIG. 7 is a schematic axial view of the extrusion regeneration assembly of the present invention;
FIG. 8 is a schematic cross-sectional front view of an extruded regeneration assembly of the present invention shown in the non-operative configuration;
FIG. 9 is a schematic sectional front view of the extruded regeneration assembly of the present invention;
FIG. 10 is a schematic diagram of the control flow of the regeneration detection subsystem according to the present invention.
The reference numbers in the figures illustrate:
the device comprises a single crystal silicon furnace body 1, a graphite heater 101, a silicon melting crucible 102, an exhaust pipe 103, a direction-adjusting adsorption cylinder 2, a flow guide adsorption cavity 201, a 3X-type zeolite molecular sieve, a microporous unidirectional adsorption plate 4, a unidirectional pressurizing pipe 401, a round core support plate 402, a flexible unidirectional sealing ring 403, a unidirectional stop bar 404, a force equalizing stop sheet 405, a reflux air pump 5, an adsorption ring 6, an air suction branch pipe 601, an extrusion regeneration component 7, a regeneration hollow lining plate 701, a contraction extrusion bag 702, a bulk material conical pipe 703, an inductive contraction strip 704 and regenerated salt powder 705.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention; it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments, and all other embodiments obtained by those skilled in the art without any inventive work are within the scope of the present invention.
In the description of the present invention, it should be noted that the terms "upper", "lower", "inner", "outer", "top/bottom", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "disposed," "sleeved/connected," "connected," and the like are to be construed broadly, e.g., "connected," which may be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Example 1:
referring to fig. 1-10, a semiconductor monocrystalline silicon growth device comprises a monocrystalline silicon furnace body 1, a graphite heater 101 installed in the monocrystalline silicon furnace body 1, and a silicon melting crucible 102 matched with the graphite heater 101, wherein a direction-adjusting adsorption cylinder 2 positioned between the graphite heater 101 and the silicon melting crucible 102 is fixedly installed in the monocrystalline silicon furnace body 1, the upper end of the direction-adjusting adsorption cylinder 2 is fixedly connected with a microporous unidirectional adsorption plate 4, the upper inner wall of the microporous unidirectional adsorption plate 4 is fixedly connected with an X-type zeolite molecular sieve 3, the inner wall of the X-type zeolite molecular sieve 3 is coated with a layer of cuprous chloride to improve the adsorption capacity of the microporous unidirectional adsorption plate to carbon monoxide gas, the lower inner wall of the microporous unidirectional adsorption plate 4 is connected with an extrusion regeneration assembly 7 matched with the X-type zeolite molecular sieve 3, the upper end of the microporous unidirectional adsorption plate 4 is fixedly connected with a plurality of unidirectional pressurization pipes 401 communicated with the microporous unidirectional adsorption plate, the lower end of the unidirectional pressurizing pipe 401 is communicated with an X-type zeolite molecular sieve 3, the lower end of the microporous unidirectional adsorption plate 4 is fixedly connected with a plurality of air suction branch pipes 601 communicated with the microporous unidirectional adsorption plate, the other end of each air suction branch pipe 601 is fixedly connected with an adsorption ring 6 communicated with the air suction branch pipe, the upper side of the outer end of the monocrystalline silicon furnace body 1 is fixedly connected with a pair of backflow air pump sets 5 communicated with the monocrystalline silicon furnace body, the backflow air pump sets 5 are the prior art, a person skilled in the art can select a backflow air pump set 5 with a proper model according to actual needs, no repeated description is needed here, the input end of the backflow air pump set 5 is matched with the adsorption ring 6, the graphite heater 101 and the silicon melting crucible 102 in the monocrystalline silicon furnace body 1 are isolated by adjusting the direction of the adsorption cylinder 2, so that SiO gas can not be close to the graphite heater 101, and further the generation of carbon monoxide is reduced, and the X-type zeolite molecular sieve 3, the microporous unidirectional adsorption plate 4 and the backflow air pump sets 5 are matched, can adsorb the circulation to the air current of the inside upside of single crystal silicon furnace body 1, when effectively getting rid of carbon monoxide, increase the outlying air current flow of crystalline silicon, form the convection current with the argon gas that lets in, the carbon monoxide to the formation dispels the isolation, make it keep away from crystalline silicon, and then reduce its volume that gets into silicon melt, reduce the formation of carbon, reduce carbon and pollute crystalline silicon, improve the preparation quality of single crystal silicon rod, and then improve its electrically conductive quality, reduce the rate of doing over again, improve the economic benefits of its manufacturing.
Referring to fig. 5 and 6, the inner wall of the unidirectional pressurizing pipe 401 is fixedly connected with a plurality of unidirectional stopping strips 404, the other end of the unidirectional stopping strip 404 is fixedly connected with a circular core supporting plate 402, the outer end of the circular core supporting plate 402 is fixedly connected with a flexible unidirectional sealing ring 403 abutting against the inner wall of the unidirectional pressurizing pipe 401, and the flexible unidirectional sealing ring 403 is located at the lower side of the unidirectional stopping strip 404, so that the unidirectional pressurizing pipe 401 has the unidirectional air inlet function through the action of the flexible unidirectional sealing ring 403 and the unidirectional stopping strips 404, the backflow of carbon monoxide gas is effectively avoided, the content of carbon monoxide at the periphery of crystalline silicon is reduced, the contact of carbon monoxide with the crystalline silicon is further effectively reduced, and the conversion of carbon monoxide is reduced. Referring to fig. 6, the lower end of the unidirectional barrier bar 404 is fixedly connected with a force equalizing baffle 405, the lower end of the force equalizing baffle 405 abuts against the upper end of the flexible unidirectional sealing ring 403, and the unidirectional barrier bar 404 and the force equalizing baffle 405 limit the deformation direction of the flexible unidirectional sealing ring 403, so as to effectively avoid the leakage of carbon monoxide near the graphite heater 101, and further improve the use effect of the flexible unidirectional sealing ring 403.
Referring to fig. 1-10, before the single crystal silicon furnace body 1 performs the semiconductor single crystal silicon growth process, a technician needs to adjust the gas flow of the reflux gas pump unit 5 according to the manufacturing parameters to reduce the stimulation to the single crystal silicon growth process, then continuously fill argon gas to protect the growth during the operation of the single crystal silicon furnace body 1, the silicon melting crucible 102 and the graphite heater 101 generate SiO gas and carbon monoxide gas, at this time, the adsorption cylinder 2 is adjusted to isolate the carbon monoxide gas generated by the graphite heater 101 to reduce the carbon monoxide content at the position of the silicon melting crucible 102, then the reflux gas pump unit 5 is started to adsorb the gas in the microporous unidirectional adsorption plate 4 through the adsorption ring 6 and the air suction branch pipe 601, so that the microporous unidirectional adsorption plate 4 generates suction force to further adsorb the argon gas, the SiO gas and the carbon monoxide gas at the upper side of the silicon melting crucible 102, the mixed gas generates pressure on the flexible one-way sealing ring 403 to deform the flexible one-way sealing ring, so that the one-way pressurizing pipe 401 forms a passage, the mixed gas enters the X-type zeolite molecular sieve 3 through the one-way pressurizing pipe 401, the X-type zeolite molecular sieve 3 adsorbs carbon monoxide gas, then the reflux gas pump unit 5 circularly reflows the adsorbed argon gas and SiO gas to the single crystal silicon furnace body 1 to form convection with the filled argon gas, further the diffusion of the carbon monoxide gas to crystalline silicon is blocked, the carbon entering into the silicon melt is reduced, further the pollution of the silicon melt is avoided, the preparation quality of the silicon rod single crystal is improved, and the conductive quality of the silicon rod single crystal is improved.
Referring to fig. 4 and 7, the extrusion regeneration assembly 7 includes a regeneration hollow lining plate 701, the lower inner wall of the microporous unidirectional adsorption plate 4 is fixedly connected with a plurality of regeneration hollow lining plates 701, the regeneration hollow lining plates 701 and the suction branch pipe 601 are arranged at intervals, the inner end of the regeneration hollow lining plate 701 is fixedly connected with a contraction extrusion bag 702 positioned in the direction-adjusting adsorption cylinder 2, the regeneration hollow lining plates 701 and the contraction extrusion bag 702 are both filled with regeneration salt powder 705, the regeneration salt powder 705 is calcium chloride, the upper end of the regeneration hollow lining plate 701 is fixedly connected with a bulk material conical pipe 703 communicated with the regeneration hollow lining plates 701, the upper end of the bulk material conical pipe 703 extends into the X-type zeolite molecular sieve 3, and the X-type zeolite molecular sieve 3 can be regenerated after the X-type zeolite molecular sieve 3 is adsorbed and saturated through the arrangement of the extrusion regeneration assembly 7, so that the X-type zeolite molecular sieve 3 can be recycled, reduce the adsorption cost and prolong the service life of the X-type zeolite molecular sieve 3. Referring to fig. 8 and 9, a plurality of guide strips are fixedly connected in the X-type zeolite molecular sieve 3, and the guide strips are fixedly connected with the upper end of the bulk conical pipe 703, so that the guide strips increase the flow range of the regenerated salt powder 705 inside the conical pipe, thereby effectively improving the regeneration efficiency, shortening the regeneration reaction time, improving the continuity of the adsorption effect of the X-type zeolite molecular sieve 3, and being effectively suitable for the continuous preparation of the semiconductor monocrystalline silicon growth. Referring to fig. 7, the shrinkage squeeze bag 702 is fixedly connected to a material-mixing ring connected to the material-mixing ring, the lower end of the material-mixing ring is fixedly connected to a material-supplementing shrinkage tube connected to the material-mixing ring, and the other end of the material-supplementing shrinkage tube passes through the adsorption cylinder 2 and the monocrystalline silicon furnace body 1 at a time and is connected to a material-supplementing box.
Referring to fig. 10, a controller electrically connected to the single crystal silicon furnace body 1 is fixedly installed at a left end of the single crystal silicon furnace body, a regeneration detection subsystem is installed in the controller, the regeneration detection subsystem includes a regeneration data processing unit, an input end of the regeneration data processing unit is connected with a carbon monoxide concentration sensor, the carbon monoxide concentration sensor is installed in the X-type zeolite molecular sieve 3, an output end of the regeneration data processing unit is respectively connected with a regeneration extrusion unit and a regeneration salt powder supplement unit, the regeneration salt powder supplement unit is electrically connected with a pump of a material supplement tank through a wire, automation and intellectualization of a regeneration process are effectively improved through the arrangement of the regeneration detection subsystem, so that adsorption capacity of the X-type zeolite molecular sieve 3 is conveniently and accurately adjusted, and carbon monoxide circulation backflow caused by adsorption saturation of the X-type zeolite molecular sieve 3 is effectively avoided, and through automatic detection control, effectively reduce artificial error, improve preparation efficiency. Referring to fig. 8 and 9, the lower inner wall of the shrinkage extrusion bag 702 is fixedly connected with a plurality of inductance shrinkage strips 704 connected with the upper inner wall of the regeneration hollow lining plate 701, the output end of the regeneration extrusion unit is electrically connected with the inductance shrinkage strips 704 through a lead, the inductance shrinkage strips 704 can drive the shrinkage extrusion bag 702 to shrink, so that the shrinkage extrusion bag 702 generates extrusion force, and further, the regeneration salt powder 705 is extruded into the X-type zeolite molecular sieve 3, so that the regeneration salt powder 705 generates a regeneration reaction on the X-type zeolite molecular sieve 3 at a high temperature, the service life of the X-type zeolite molecular sieve 3 is prolonged, and the continuous effectiveness of the adsorption is maintained.
Referring to fig. 1-10, a carbon monoxide concentration sensor is preset with a concentration response value, during the continuous adsorption process of the X-type zeolite molecular sieve 3, the carbon monoxide concentration sensor detects that the concentration of carbon monoxide in the X-type zeolite molecular sieve 3 reaches a set value, immediately transmits data to a regeneration data processing unit, enables the regeneration data processing unit to output data to a regeneration extrusion unit, enables the regeneration extrusion unit to be connected with current in an inductance contraction strip 704, enables the inductance contraction strip 704 to generate inductance reaction contraction, and drives a contraction extrusion bag 702 to contract, so that regenerated salt powder 705 is extruded to enter the X-type zeolite molecular sieve 3 through a bulk material conical pipe 703, the regenerated salt powder 705 performs regeneration reaction on the X-type zeolite molecular sieve 3 at high temperature, so as to effectively maintain the adsorption effect of the X-type zeolite molecular sieve 3, and the regeneration data processing unit simultaneously outputs data to a regenerated salt powder supplement unit, after the effect of the inductive shrinkage strip 704 is finished, a pump machine of a material supplementing box is started to supplement the regenerated salt powder 705 in the shrinkage extrusion bag 702, so that the continuity of the regeneration process is effectively ensured, and the automation of regeneration control is improved.
Referring to fig. 3, a flow guide adsorption cavity 201 is formed in the direction-adjusting adsorption cylinder 2, a plurality of flow guide air holes communicated with the flow guide adsorption cavity 201 are formed in the lower side of the inner wall of the direction-adjusting adsorption cylinder 2, a plurality of one-way air film holes communicated with the flow guide adsorption cavity 201 are formed in the upper side of the outer wall of the direction-adjusting adsorption cylinder 2, and the air near the silicon melting crucible 102 forms one-way circulation through the cooperation of the flow guide adsorption cavity 201, the flow guide air holes and the one-way air film holes, and rapidly enters the flow guide adsorption cavity 201 under the action of argon gas, so that the residence time of the gas near the silicon melting crucible 102 is reduced, the diffusion effect of the gas is further reduced, the upward movement of carbon monoxide is reduced, and the carbon pollution of the single crystal silicon rod is effectively avoided. Referring to fig. 2, the lower sides of the left and right ends of the single crystal silicon furnace body 1 are respectively provided with an exhaust pipe 103, and the exhaust pipes 103 are matched with the unidirectional gas film holes, so that the backflow of carbon monoxide near the graphite heater 101 is effectively reduced and the exhaust efficiency is improved through the matching of the unidirectional gas film holes and the exhaust pipes 103.
The foregoing is only a preferred embodiment of the present invention; the scope of the invention is not limited thereto. Any person skilled in the art should be able to cover the technical scope of the present invention by equivalent or modified solutions and modifications within the technical scope of the present invention.
Claims (10)
1. The utility model provides a semiconductor monocrystalline silicon growth device, includes monocrystalline silicon furnace body (1), installs graphite heater (101) in monocrystalline silicon furnace body (1) and melts silicon crucible (102) with graphite heater (101) matched with, its characterized in that: the single crystal silicon furnace body (1) is internally and fixedly provided with a direction-adjusting adsorption cylinder (2) which is positioned between a graphite heater (101) and a silicon melting crucible (102), the direction-adjusting adsorption cylinder (2) is fixedly connected with a microporous one-way adsorption plate (4) at the upper end of the adsorption cylinder (2), the upper inner wall of the microporous one-way adsorption plate (4) is fixedly connected with an X-type zeolite molecular sieve (3), the lower inner wall of the microporous one-way adsorption plate (4) is connected with an extrusion regeneration component (7) which is matched with the X-type zeolite molecular sieve (3), the upper end of the microporous one-way adsorption plate (4) is fixedly connected with a plurality of one-way pressure pipes (401) which are communicated with the microporous one-way adsorption plate, the lower end of each one-way pressure pipe (401) is communicated with the X-type zeolite molecular sieve (3), the lower end of the microporous one-way adsorption plate (4) is fixedly connected with a plurality of air suction branch pipes (601) which are communicated with the microporous one-way adsorption plates, and the other end of each air suction branch pipe (601) is fixedly connected with an adsorption ring (6) which is communicated with the microporous one-way pressure pipe, the upper side of the outer end of the monocrystalline silicon furnace body (1) is fixedly connected with a pair of backflow air pump sets (5) communicated with the monocrystalline silicon furnace body, and the input ends of the backflow air pump sets (5) are matched with the adsorption ring (6).
2. A semiconductor single crystal silicon growth apparatus according to claim 1, characterized in that: one-way pressurization pipe (401) inner wall fixedly connected with a plurality of one-way shelves strip (404), one-way shelves strip (404) other end fixedly connected with circle core fagging (402), circle core fagging (402) outer end fixedly connected with one-way pressurization pipe (401) inner wall looks butt flexible one-way sealing ring (403), and flexible one-way sealing ring (403) are located one-way shelves strip (404) downside.
3. A semiconductor single crystal silicon growth apparatus according to claim 2, characterized in that: the lower end of the unidirectional baffle bar (404) is fixedly connected with a uniform force baffle plate (405), and the lower end of the uniform force baffle plate (405) is abutted with the upper end of the flexible unidirectional sealing ring (403).
4. A semiconductor single crystal silicon growth apparatus according to claim 1, characterized in that: extrusion regeneration subassembly (7) is including regeneration hollow welt (701), a plurality of regeneration hollow welt (701) of inner wall fixedly connected with under micropore one-way adsorption plate (4), and regeneration hollow welt (701) and branch pipe (601) of breathing in are the interval setting, regeneration hollow welt (701) inner fixedly connected with is located and transfers to shrink extrusion bag (702) in adsorption cylinder (2), regeneration hollow welt (701) and shrink extrusion bag (702) are all filled with regeneration salt powder (705), regeneration hollow welt (701) upper end fixedly connected with rather than bulk cargo taper pipe (703) of putting through mutually, and bulk cargo taper pipe (703) upper end extends to in X type zeolite molecular sieve (3).
5. The semiconductor single crystal silicon growth device of claim 4, wherein: a plurality of flow guide strips are fixedly connected in the X-type zeolite molecular sieve (3), and the flow guide strips are fixedly connected with the upper end of the bulk material conical pipe (703).
6. The semiconductor single crystal silicon growth device of claim 4, wherein: the shrinkage extrusion bag (702) is fixedly connected with a material homogenizing ring communicated with the shrinkage extrusion bag, the lower end of the material homogenizing ring is fixedly connected with a material supplementing shrinkage pipe communicated with the material homogenizing ring, and the other end of the material supplementing shrinkage pipe penetrates through the adsorption cylinder (2) and the monocrystalline silicon furnace body (1) once and is communicated with a material supplementing box.
7. A semiconductor single crystal silicon growth apparatus according to claim 6, characterized in that: the single crystal silicon furnace comprises a single crystal silicon furnace body (1), wherein a controller electrically connected with the single crystal silicon furnace body is fixedly installed at the left end of the single crystal silicon furnace body (1), a regeneration detection subsystem is arranged in the controller and comprises a regeneration data processing unit, the input end of the regeneration data processing unit is connected with a carbon monoxide concentration sensor, the carbon monoxide concentration sensor is installed in an X-type zeolite molecular sieve (3), the output end of the regeneration data processing unit is respectively connected with a regeneration extrusion unit and a regeneration salt powder supplementing unit, and the regeneration salt powder supplementing unit is electrically connected with a pump of a material supplementing box through a wire.
8. A semiconductor single crystal silicon growth apparatus according to claim 7, characterized in that: the lower inner wall of the contraction extrusion bag (702) is fixedly connected with a plurality of inductance contraction strips (704) connected with the upper inner wall of the regeneration hollow lining plate (701), and the output end of the regeneration extrusion unit is electrically connected with the inductance contraction strips (704) through a lead.
9. A semiconductor single crystal silicon growth apparatus according to claim 1, characterized in that: transfer to having seted up water conservancy diversion absorption chamber (201) in absorption section of thick bamboo (2), transfer to absorption section of thick bamboo (2) inner wall downside and seted up a plurality of water conservancy diversion gas pockets that adsorb chamber (201) and put through mutually, transfer to absorption section of thick bamboo (2) outer wall upside and seted up a plurality of one-way air film holes that adsorb chamber (201) and put through mutually with the water conservancy diversion.
10. A semiconductor single crystal silicon growth apparatus according to claim 9, characterized in that: exhaust pipes (103) are arranged on the lower sides of the left end and the right end of the monocrystalline silicon furnace body (1), and the exhaust pipes (103) are matched with the one-way air film holes.
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