CN113430564A - Preparation method of boron-doped selenide heterojunction nano material - Google Patents
Preparation method of boron-doped selenide heterojunction nano material Download PDFInfo
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- 239000002086 nanomaterial Substances 0.000 title claims abstract description 63
- 150000003346 selenoethers Chemical class 0.000 title claims abstract description 16
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 38
- 238000003756 stirring Methods 0.000 claims description 28
- 238000006243 chemical reaction Methods 0.000 claims description 23
- 238000001035 drying Methods 0.000 claims description 21
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 20
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 20
- 239000011669 selenium Substances 0.000 claims description 20
- 239000008367 deionised water Substances 0.000 claims description 18
- 229910021641 deionized water Inorganic materials 0.000 claims description 18
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 15
- 229940078487 nickel acetate tetrahydrate Drugs 0.000 claims description 15
- OINIXPNQKAZCRL-UHFFFAOYSA-L nickel(2+);diacetate;tetrahydrate Chemical compound O.O.O.O.[Ni+2].CC([O-])=O.CC([O-])=O OINIXPNQKAZCRL-UHFFFAOYSA-L 0.000 claims description 15
- NWZSZGALRFJKBT-KNIFDHDWSA-N (2s)-2,6-diaminohexanoic acid;(2s)-2-hydroxybutanedioic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O.NCCCC[C@H](N)C(O)=O NWZSZGALRFJKBT-KNIFDHDWSA-N 0.000 claims description 13
- 238000001816 cooling Methods 0.000 claims description 13
- IKDUDTNKRLTJSI-UHFFFAOYSA-N hydrazine monohydrate Substances O.NN IKDUDTNKRLTJSI-UHFFFAOYSA-N 0.000 claims description 13
- 239000011259 mixed solution Substances 0.000 claims description 12
- 238000005406 washing Methods 0.000 claims description 12
- QHASIAZYSXZCGO-UHFFFAOYSA-N selanylidenenickel Chemical compound [Se]=[Ni] QHASIAZYSXZCGO-UHFFFAOYSA-N 0.000 claims description 10
- 239000012279 sodium borohydride Substances 0.000 claims description 9
- 229910000033 sodium borohydride Inorganic materials 0.000 claims description 9
- 239000000243 solution Substances 0.000 claims description 9
- 238000005303 weighing Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- 230000035484 reaction time Effects 0.000 claims description 4
- 238000005868 electrolysis reaction Methods 0.000 abstract description 12
- 239000003054 catalyst Substances 0.000 abstract description 9
- 239000003344 environmental pollutant Substances 0.000 abstract description 9
- 231100000719 pollutant Toxicity 0.000 abstract description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052796 boron Inorganic materials 0.000 abstract description 8
- 239000001257 hydrogen Substances 0.000 abstract description 8
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 abstract description 7
- 230000009286 beneficial effect Effects 0.000 abstract description 7
- 239000004202 carbamide Substances 0.000 abstract description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 5
- 230000015556 catabolic process Effects 0.000 abstract description 4
- 238000006731 degradation reaction Methods 0.000 abstract description 4
- 230000001276 controlling effect Effects 0.000 abstract description 3
- 238000011161 development Methods 0.000 abstract description 3
- 230000001105 regulatory effect Effects 0.000 abstract description 3
- 230000003197 catalytic effect Effects 0.000 description 5
- 230000000593 degrading effect Effects 0.000 description 3
- 238000005265 energy consumption Methods 0.000 description 3
- 230000027756 respiratory electron transport chain Effects 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000005119 centrifugation Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- KEAYESYHFKHZAL-UHFFFAOYSA-N Sodium Chemical compound [Na] KEAYESYHFKHZAL-UHFFFAOYSA-N 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000634 powder X-ray diffraction Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(IV) oxide Inorganic materials O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 229910000104 sodium hydride Inorganic materials 0.000 description 1
- 239000012312 sodium hydride Substances 0.000 description 1
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- C25B11/00—Electrodes; Manufacture thereof not otherwise provided for
- C25B11/04—Electrodes; Manufacture thereof not otherwise provided for characterised by the material
- C25B11/051—Electrodes formed of electrocatalysts on a substrate or carrier
- C25B11/073—Electrodes formed of electrocatalysts on a substrate or carrier characterised by the electrocatalyst material
- C25B11/091—Electrodes formed of electrocatalysts on a substrate or carrier characterised by the electrocatalyst material consisting of at least one catalytic element and at least one catalytic compound; consisting of two or more catalytic elements or catalytic compounds
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- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/46—Treatment of water, waste water, or sewage by electrochemical methods
- C02F1/461—Treatment of water, waste water, or sewage by electrochemical methods by electrolysis
- C02F1/46104—Devices therefor; Their operating or servicing
- C02F1/46109—Electrodes
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- C25B1/00—Electrolytic production of inorganic compounds or non-metals
- C25B1/01—Products
- C25B1/02—Hydrogen or oxygen
- C25B1/04—Hydrogen or oxygen by electrolysis of water
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- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/46—Treatment of water, waste water, or sewage by electrochemical methods
- C02F1/461—Treatment of water, waste water, or sewage by electrochemical methods by electrolysis
- C02F1/46104—Devices therefor; Their operating or servicing
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Abstract
The invention provides a preparation method of a boron-doped selenide heterojunction nano material, belonging to the technical field of preparation methods of electrocatalytic materials. The nano material synthesized by the invention is made of Ni0.85Se and NiSe2The nanometer material is composed of two components, shows a heterojunction structure, and is also introduced with boron, which is beneficial to regulating and controlling the electronic structure of the material and accelerating the transfer capability of electrons. The electrolyzed water catalyst not only has good electrolyzed water performance, but also can be applied to the degradation of urea in industrial and agricultural pollutants, and is environment-friendly electrolyzed waterThe catalyst is simple in preparation process, good in stability and easy to realize industrial mass production, is a potential water electrolysis catalyst, and is expected to promote the industrial development of hydrogen production by water electrolysis and urea degradation of pollutants.
Description
Technical Field
The invention relates to a preparation method and application of a boron-doped selenide heterojunction nano material, belonging to the field of preparation of environment-friendly electrolytic water materials.
Background
With the development of economy, energy problems and environmental pollution problems become more and more serious. Hydrogen, as a clean, efficient, renewable energy source, is considered to be a desirable alternative to non-renewable fossil fuels. The water electrolysis hydrogen production industry can produce high-purity hydrogen, and is an important way for developing sustainable energy. The water electrolysis comprises two half reactions of hydrogen production (HER) and oxygen production (OER), but the hydrogen production by driving the water electrolysis is often large in energy consumption and low in efficiency due to kinetic obstruction, so that a water electrolysis catalyst needs to be developed to reduce energy consumption and improve energy conversion rate. Pt is considered to be a better HER catalyst, but Pt is expensive, and the activity and the stability of Pt in an alkaline solution are poor, so that the wide application of Pt is severely limited; RuO2It is considered to be a good OER catalyst, however, its performance decay is severe, and OER is a four-electron process, the kinetics is slow, the overpotential is high, so that the actual voltage of electrolyzed water is far higher than its theoretical value (1.23V), and thus the high energy consumption limits its wide application.
NiSe2Has become a common high-efficiency water electrolysis catalyst, and in order to further improve the catalytic performance, NiSe is used2In situ grow Ni on the outer surface0.85Se nano material, forming Ni0.85Se/NiSe2The heterojunction nano material is provided with an electronic structure which is beneficial to regulating and controlling the nano material and has the capability of accelerating electron transfer; at the same time, also to Ni0.85Se/NiSe2The heterojunction nano material is doped with boron, which is beneficial to improving the electrolytic water performance of the nano material.
The material not only shows excellent catalytic performance in electrolyzed water, but also can be used for degrading urea in industrial and agricultural pollutants, thereby achieving the aim of environmental friendliness. Researches find that in the water electrolysis reaction, the pollutant urea is added into the electrolyte, which is beneficial to reducing the overpotential of the reaction and can achieve the purpose of degrading pollutants at the same time, thereby achieving two purposes.
Disclosure of Invention
The invention provides a preparation method of a boron-doped selenide heterojunction nano material, which can be used as a high-efficiency electrolytic water catalyst and can also be used for catalytic degradation of pollutant urea.
In order to achieve the purpose, the invention provides the following technical scheme:
(1)NiSe2preparing a nano material: weighing selenium powder and nickel acetate tetrahydrate, dispersing the selenium powder and the nickel acetate tetrahydrate in deionized water with a certain volume, carrying out ultrasonic stirring treatment, dropwise adding a certain amount of hydrazine hydrate solution, stirring for a period of time, transferring the mixed solution into a reaction kettle, carrying out constant-temperature reaction in an oven for a period of time, naturally cooling, carrying out multiple centrifugal washing on the obtained product by using deionized water and absolute ethyl alcohol, then transferring the product into an oven, and drying at a certain temperature to obtain NiSe2Nano material for standby.
(2) Boron doped Ni0.85Se/NiSe2Preparing a heterojunction nano material: weighing a certain amount of NiSe2Dispersing the nano material in absolute ethyl alcohol with a certain volume, adding a certain amount of sodium borohydride after ultrasonic stirring treatment, continuously stirring for a period of time, transferring the mixed solution into a reaction kettle, reacting in an oven at constant temperature for a period of time, naturally cooling, washing the obtained product by using deionized water and absolute ethyl alcohol for multiple times in a centrifugal manner, transferring the product into the oven, drying at a certain temperature, and finally obtaining the boron-doped Ni0.85Se/NiSe2A heterojunction nanomaterial.
Preferably, in the step (1), the dosage of the selenium powder is 0.474-0.632 g, the dosage of the nickel acetate tetrahydrate is 0.374-0.498 g, the mass fraction of the hydrazine hydrate is 50% -80%, and the dosage of the hydrazine hydrate is 20-35 mL. .
Preferably, in the step (1), the reaction temperature is kept constant in an oven at 140-160 ℃, and the reaction time is kept constant in the oven for 15-20 hours.
Preferably, in the step (1), the stirring time after dropwise adding of a certain amount of hydrazine hydrate solution is as follows: 0.5-1.0 h, and the drying temperature in the oven is as follows: and (2) drying in an oven at the temperature of 60-80 ℃ for the following time: 12-24 h.
Preferably, in the step (2), NiSe is added2The dosage of the nano material is 0.05-0.2 g, the dosage of the absolute ethyl alcohol is 15-30 mL, and boronThe amount of sodium hydride used was: 0.2 to 0.5 g.
Preferably, in the step (2), the reaction temperature is 160-180 ℃ at constant temperature in the oven, and the reaction time is 1-4 h at constant temperature in the oven.
Preferably, in the step (2), the stirring time after the sodium borohydride is added is 0.2-0.5 h, and the drying temperature in the oven is as follows: and drying in an oven at 50-60 ℃ for the following time: 8-12 h.
The invention has the advantages and beneficial effects that:
1. the invention provides a preparation method of a boron-doped selenide heterojunction nano material, wherein Ni in the nano material0.85Se/NiSe2The design of the heterojunction structure is beneficial to regulating and controlling the electronic structure of the nano material and accelerating the electron transfer capacity; the doping of the boron element is also beneficial to optimizing the electronic structure of the nano material, accelerating the electron transfer capability and improving the catalytic performance of the nano material.
2. The invention provides a preparation method of a boron-doped selenide heterojunction nano material, and the water electrolysis catalyst has good catalytic performance, simple preparation process, high stability and low price of raw materials, is easy to realize industrial mass production, and can contribute to the realization of the industrial development of hydrogen production by water electrolysis.
3. The invention provides a preparation method of a boron-doped selenide heterojunction nano material, wherein in the water electrolysis reaction, a pollutant urea is added into an electrolyte, so that the overpotential of the reaction is reduced, and the purpose of degrading pollutants can be achieved.
Drawings
FIG. 1: the invention provides a flow chart of a preparation method of a boron-doped selenide heterojunction nano material;
FIG. 2: NiSe obtained in example 1 of the invention2Nanomaterial and boron-doped Ni obtained in examples 1, 2, 3 and 40.85Se/NiSe2An X-ray powder diffraction pattern of the heterojunction nanomaterial;
FIG. 3: boron-doped Ni obtained in examples 1, 2, 3 and 4 of the present invention0.85Se/NiSe2Scanning of heterojunction nanomaterialsAn electron microscope image;
FIG. 4: NiSe obtained in example 1 of the invention2Nanomaterial and boron-doped Ni obtained in examples 1, 2, 3 and 40.85Se/NiSe2A hydrogen evolution reaction performance diagram of the heterojunction nano material;
FIG. 5: NiSe obtained in example 1 of the invention2Nanomaterial and boron-doped Ni obtained in examples 1, 2, 3 and 40.85Se/NiSe2An oxygen evolution reaction performance diagram of the heterojunction nano material;
FIG. 6: boron-doped Ni obtained in example 2 of the invention0.85Se/NiSe2The water electrolysis performance and the pollutant degradation urea performance of the heterojunction nano material are shown.
Detailed Description
The present invention will be described in detail below with reference to the drawings and examples, but the scope of the present invention is not limited to the following examples.
Example 1:
(1)NiSe2preparing a nano material: weighing 0.632g of selenium powder and 0.498g of nickel acetate tetrahydrate, dispersing the selenium powder and the nickel acetate tetrahydrate in 15mL of deionized water, carrying out ultrasonic stirring treatment, dropwise adding 30mL of hydrazine hydrate solution with the mass fraction of 80%, stirring for 1 hour, transferring the mixed solution into a reaction kettle, reacting in an oven at 140 ℃ for 20 hours, naturally cooling, carrying out multiple centrifugal washing on the obtained product with deionized water and absolute ethyl alcohol, transferring into the oven, and drying at 70 ℃ for 24 hours to obtain NiSe2Nano material for standby.
(2) Boron doped Ni0.85Se/NiSe2Preparing a heterojunction nano material: 0.1g of NiSe prepared is weighed2Dispersing the nano material in 20mL of absolute ethyl alcohol, performing ultrasonic stirring treatment, adding 0.3g of sodium borohydride, continuously stirring for 0.5 hour, transferring the mixed solution into a reaction kettle, reacting in an oven at 160 ℃ for 1 hour, naturally cooling, performing centrifugal washing on the obtained product for multiple times by using deionized water and absolute ethyl alcohol, transferring the product into an oven, drying at 50 ℃ for 12 hours, and finally obtaining the boron-doped Ni0.85Se/NiSe2A heterojunction nanomaterial.
Example 2:
(1)NiSe2preparing a nano material: weighing 0.632g of selenium powder and 0.498g of nickel acetate tetrahydrate, dispersing the selenium powder and the nickel acetate tetrahydrate in 15mL of deionized water, carrying out ultrasonic stirring treatment, dropwise adding 30mL of hydrazine hydrate solution with the mass fraction of 80%, stirring for 1 hour, transferring the mixed solution into a reaction kettle, reacting in an oven at 140 ℃ for 20 hours, naturally cooling, carrying out multiple centrifugal washing on the obtained product with deionized water and absolute ethyl alcohol, transferring into the oven, and drying at 70 ℃ for 24 hours to obtain NiSe2Nano material for standby.
(2) Boron doped Ni0.85Se/NiSe2Preparing a heterojunction nano material: 0.1g of NiSe prepared is weighed2Dispersing the nano material in 20mL of absolute ethyl alcohol, performing ultrasonic stirring treatment, adding 0.3g of sodium borohydride, continuously stirring for 0.5 hour, transferring the mixed solution into a reaction kettle, reacting in an oven at 160 ℃ for 2 hours, naturally cooling, washing the obtained product by using deionized water and absolute ethyl alcohol for multiple times of centrifugation, transferring into an oven, drying at 50 ℃ for 12 hours, and finally obtaining the boron-doped Ni0.85Se/NiSe2A heterojunction nanomaterial.
Example 3:
(1)NiSe2preparing a nano material: weighing 0.632g of selenium powder and 0.498g of nickel acetate tetrahydrate, dispersing the selenium powder and the nickel acetate tetrahydrate in 15mL of deionized water, carrying out ultrasonic stirring treatment, dropwise adding 30mL of hydrazine hydrate solution with the mass fraction of 80%, stirring for 1 hour, transferring the mixed solution into a reaction kettle, reacting in an oven at 140 ℃ for 20 hours, naturally cooling, carrying out multiple centrifugal washing on the obtained product with deionized water and absolute ethyl alcohol, transferring into the oven, and drying at 70 ℃ for 24 hours to obtain NiSe2Nano material for standby.
(2) Boron doped Ni0.85Se/NiSe2Preparing a heterojunction nano material: 0.1g of NiSe prepared is weighed2Dispersing the nano material in 20mL of absolute ethyl alcohol, carrying out ultrasonic stirring treatment, adding 0.3g of sodium borohydride, continuously stirring for 0.5 hour, transferring the mixed solution into a reaction kettle, and reacting for 3 hours at 160 ℃ in an ovenNaturally cooling, centrifugally washing the obtained product with deionized water and absolute ethyl alcohol for multiple times, transferring the product into a drying oven, and drying the product for 12 hours at 50 ℃ to finally obtain the boron-doped Ni0.85Se/NiSe2A heterojunction nanomaterial.
Example 4:
(1)NiSe2preparing a nano material: weighing 0.632g of selenium powder and 0.498g of nickel acetate tetrahydrate, dispersing the selenium powder and the nickel acetate tetrahydrate in 15mL of deionized water, carrying out ultrasonic stirring treatment, dropwise adding 30mL of hydrazine hydrate solution with the mass fraction of 80%, stirring for 1 hour, transferring the mixed solution into a reaction kettle, reacting in an oven at 140 ℃ for 20 hours, naturally cooling, carrying out multiple centrifugal washing on the obtained product with deionized water and absolute ethyl alcohol, transferring into the oven, and drying at 70 ℃ for 24 hours to obtain NiSe2Nano material for standby.
(2) Boron doped Ni0.85Se/NiSe2Preparing a heterojunction nano material: 0.1g of NiSe prepared is weighed2Dispersing the nano material in 20mL of absolute ethyl alcohol, performing ultrasonic stirring treatment, adding 0.3g of sodium borohydride, continuously stirring for 0.5 hour, transferring the mixed solution into a reaction kettle, reacting for 4 hours at 160 ℃ in an oven, naturally cooling, washing the obtained product by using deionized water and absolute ethyl alcohol for multiple times of centrifugation, transferring the product into the oven, drying for 12 hours at 50 ℃ to finally obtain the boron-doped Ni0.85Se/NiSe2A heterojunction nanomaterial.
Although the specific embodiments of the present invention have been described with reference to the examples, the scope of the present invention is not limited thereto, and those skilled in the art will appreciate that various modifications and variations can be made without inventive effort by those skilled in the art based on the technical solution of the present invention.
Claims (7)
1. A preparation method of a boron-doped selenide heterojunction nano material is characterized by comprising the following steps:
step one, weighing selenium powder and nickel acetate tetrahydrate, and dispersing the selenium powder and the nickel acetate tetrahydrate in a certain volume for deionizationAdding a certain amount of hydrazine hydrate solution dropwise after ultrasonic stirring treatment in water, stirring for a period of time, transferring the mixed solution into a reaction kettle, reacting in an oven at constant temperature for a period of time, naturally cooling and cooling, centrifugally washing the obtained product for multiple times by using deionized water and absolute ethyl alcohol, then transferring into the oven, and drying at a certain temperature to obtain NiSe2A nanomaterial;
step two, weighing a certain amount of NiSe prepared2Dispersing the nano material in absolute ethyl alcohol with a certain volume, adding a certain amount of sodium borohydride after ultrasonic stirring treatment, continuously stirring for a period of time, transferring the mixed solution into a reaction kettle, reacting in an oven at constant temperature for a period of time, naturally cooling, washing the obtained product by using deionized water and absolute ethyl alcohol for multiple times in a centrifugal manner, transferring the product into the oven, and drying at a certain temperature to obtain the boron-doped Ni0.85Se/NiSe2A heterojunction nanomaterial.
2. The method for preparing a boron-doped selenide heterojunction nanomaterial as claimed in claim 1, wherein: in the first step, the dosage of the selenium powder is 0.474-0.632 g, the dosage of the nickel acetate tetrahydrate is 0.374-0.498 g, and the volume of deionized water for dispersing the selenium powder and the nickel acetate tetrahydrate is as follows: 8-15 mL of hydrazine hydrate, wherein the mass fraction of the hydrazine hydrate is 50% -80%, and the dosage of the hydrazine hydrate is 20-35 mL.
3. The method for preparing a boron-doped selenide heterojunction nanomaterial as claimed in claim 1, wherein: in the first step, the reaction temperature is 140-160 ℃ at constant temperature in an oven, and the reaction time is 15-20 h at constant temperature in the oven.
4. The method for preparing a boron-doped selenide heterojunction nanomaterial as claimed in claim 1, wherein: in the first step, after dropwise adding a certain amount of hydrazine hydrate solution, stirring time is as follows: 0.5-1.0 h, and the drying temperature in the oven is as follows: and (2) drying in an oven at the temperature of 60-80 ℃ for the following time: 12-24 h.
5. The method for preparing a boron-doped selenide heterojunction nanomaterial as claimed in claim 1, wherein: in the second step, the NiSe2The dosage of the nano material is 0.05-0.2 g, the dosage of the absolute ethyl alcohol is 15-30 mL, and the dosage of the sodium borohydride is as follows: 0.2 to 0.5 g.
6. The method for preparing a boron-doped selenide heterojunction nanomaterial as claimed in claim 1, wherein: in the second step, the constant temperature reaction temperature in the oven is 160-180 ℃, and the constant temperature reaction time in the oven is 1-4 h.
7. The method for preparing a boron-doped selenide heterojunction nanomaterial as claimed in claim 1, wherein: in the second step, the stirring time after the sodium borohydride is added is 0.2-0.5 h, and the drying temperature in the oven is as follows: and drying in an oven at 50-60 ℃ for the following time: 8-12 h.
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