CN113422181B - Adjustable filtering module with ultra-wide frequency conversion range - Google Patents
Adjustable filtering module with ultra-wide frequency conversion range Download PDFInfo
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Abstract
Description
技术领域technical field
本发明涉及微波通信技术,尤其涉及一种具有超宽变频范围的可调滤波模组。The invention relates to microwave communication technology, in particular to an adjustable filter module with ultra-wide frequency conversion range.
背景技术Background technique
在无线通信系统中,滤波器被用于滤除杂波信号的干扰,从而保证通信质量。随着现代无线通信技术的飞速发展,系统通常需要支持不同工作频段下的多种应用,若全部使用固定性能的滤波器,不仅会提高系统成本,还会增大系统体积。可调滤波器是解决这一问题的有效途径,其可根据应用场景需求对滤波性能进行灵活调节,从而实现系统小型化,智能化。In wireless communication systems, filters are used to filter out the interference of clutter signals to ensure communication quality. With the rapid development of modern wireless communication technology, the system usually needs to support multiple applications in different operating frequency bands. If all filters with fixed performance are used, not only will the system cost be increased, but the system volume will also be increased. The tunable filter is an effective way to solve this problem. It can flexibly adjust the filtering performance according to the requirements of the application scene, so as to realize the miniaturization and intelligence of the system.
然而,目前提出的各类可调滤波器件仍然存在频率调谐范围窄,工作频率低,且调谐方式复杂等缺点。同时,可工作在高频范围的中心频率与相对带宽全可调的滤波器方案仍然较少。However, various tunable filter devices currently proposed still have shortcomings such as narrow frequency tuning range, low operating frequency, and complicated tuning methods. At the same time, there are still few filter solutions with fully adjustable center frequency and relative bandwidth that can work in the high frequency range.
发明内容Contents of the invention
本发明的目的在于解决上述问题,提供一种可工作在高频范围的中心频率与相对带宽全可调的具有超宽变频范围的可调滤波模组。The purpose of the present invention is to solve the above problems and provide an adjustable filter module with an ultra-wide frequency conversion range that can work in a high-frequency range, the central frequency and the relative bandwidth are fully adjustable.
本发明的目的是这样实现的,提供一种具有超宽变频范围的可调滤波模组,该滤波模组包含一个数字控制电路、N个可调滤波模块以及分别连接信号输入端和输出端的两个单刀多掷开关,N个可调滤波模块并行连接在两个单刀多掷开关之间,形成N条相互独立的滤波通路,且每条滤波通路均具有不同的工作频率调谐范围;数字控制电路向两个单刀多掷开关输出控制信号,选择确定所需频率范围对应的滤波通路,同时由数字控制电路向对应可调滤波模块输出控制电压,以改变滤波模块中变容二极管的工作状态,实现对滤波性能的调节。The object of the present invention is achieved by providing an adjustable filter module with an ultra-wide frequency conversion range, which includes a digital control circuit, N adjustable filter modules and two One single-pole multi-throw switch, N adjustable filter modules connected in parallel between two single-pole multi-throw switches, forming N mutually independent filter paths, and each filter path has a different operating frequency tuning range; digital control circuit Output control signals to two single-pole multi-throw switches, select and determine the filter path corresponding to the required frequency range, and at the same time, the digital control circuit outputs control voltage to the corresponding adjustable filter module to change the working state of the varactor diode in the filter module to achieve Adjustment of filter performance.
优选的,N个可调滤波模块的工作频率范围覆盖2GHz-18GHz,对于2GHz-7GHz范围,采用具有第一滤波电路的可调滤波模块,所述第一滤波电路为加载变容二极管的微带电路结构;对于7GHz-18GHz范围,采用具有第二滤波电路的可调滤波模块,所述第二滤波电路包括级联的高通滤波单元和低通滤波单元,低通滤波单元采用缺陷地结构,高通滤波单元采用微带结构。Preferably, the operating frequency range of the N adjustable filter modules covers 2GHz-18GHz, and for the range of 2GHz-7GHz, an adjustable filter module with a first filter circuit is used, and the first filter circuit is a microstrip loaded with a varactor diode Circuit structure; for the 7GHz-18GHz range, an adjustable filter module with a second filter circuit is used, the second filter circuit includes a cascaded high-pass filter unit and a low-pass filter unit, the low-pass filter unit adopts a defect ground structure, and the high-pass The filtering unit adopts a microstrip structure.
优选的,所述第一滤波电路包括连接在输入端和输出端之间的两个级联的十字形微带谐振器,每个十字形微带谐振器包括相互垂直的水平微带线和垂直微带线,水平微带线的两端分别加载有一对背靠背形式连接的变容二极管,变容二极管的阴极通过电阻连接到直流偏置。Preferably, the first filter circuit includes two cascaded cross-shaped microstrip resonators connected between the input end and the output end, each cross-shaped microstrip resonator includes horizontal microstrip lines perpendicular to each other and vertical A microstrip line, two ends of the horizontal microstrip line are respectively loaded with a pair of varactor diodes connected in a back-to-back form, and the cathodes of the varactor diodes are connected to a DC bias through a resistor.
优选的,垂直微带线的两端分别加载有一对背靠背形式连接的变容二极管,两个十字形微带谐振器的水平微带线之间通过一对背靠背形式连接的变容二极管连接,两个十字形微带谐振器的水平微带线通过依次连接的变容二极管和定值电容分别连接到输入微带线和输出微带线,所有变容二极管的阴极均通过电阻连接直流偏置。Preferably, the two ends of the vertical microstrip line are respectively loaded with a pair of varactor diodes connected in a back-to-back form, and the horizontal microstrip lines of the two cross-shaped microstrip resonators are connected by a pair of varactor diodes connected in a back-to-back form. The horizontal microstrip lines of each cross-shaped microstrip resonator are respectively connected to the input microstrip line and the output microstrip line through sequentially connected varactor diodes and fixed value capacitors, and the cathodes of all varactor diodes are connected to DC bias through resistors.
优选的,低通滤波单元包括设置在基板顶层的微带传输线,以及在基板底层的接地金属平面上刻蚀凹槽形成的多个缺陷地单元,多个缺陷地单元以固定间距进行周期性排列,以形成低通滤波响应,所述微带传输线位于缺陷地单元的正上方,微带传输线的一端连接高通滤波单元。Preferably, the low-pass filter unit includes a microstrip transmission line arranged on the top layer of the substrate, and a plurality of defective ground units formed by etching grooves on the ground metal plane of the bottom layer of the substrate, and the multiple defective ground units are periodically arranged at fixed intervals , to form a low-pass filter response, the microstrip transmission line is located directly above the defective ground unit, and one end of the microstrip transmission line is connected to the high-pass filter unit.
优选的,每个缺陷地单元的内侧形成有金属条,金属条与缺陷地单元外侧的接地金属平面通过缺陷地单元实现隔离,在每个所述缺陷地单元上均加载有变容二极管,变容二极管的阴极连接金属条,阳极连接接地金属平面,基板顶层设置有偏置网络,偏置网络通过金属通孔连接所述金属条,以通过偏置网络改变变容二极管的电容值,从而调节低通滤波单元的截止频率。Preferably, a metal strip is formed on the inner side of each defective ground unit, and the metal strip is isolated from the grounding metal plane outside the defective ground unit through the defective ground unit, and a varactor diode is loaded on each defective ground unit. The cathode of the capacitor diode is connected to the metal strip, and the anode is connected to the grounded metal plane. The top layer of the substrate is provided with a bias network, and the bias network is connected to the metal strip through a metal via to change the capacitance value of the varactor diode through the bias network, thereby adjusting The cutoff frequency of the low-pass filter unit.
优选的,高通滤波单元包含主传输线和四个谐振支节,每个谐振支节上分别加载有一对背靠背形式连接的变容二极管,每对变容二极管的阴极通过电阻连接偏置电压,通过调节偏置电压改变对应变容二极管的电容值,实现对高通滤波单元截止频率的重构。Preferably, the high-pass filter unit includes a main transmission line and four resonant branches, and each resonant branch is respectively loaded with a pair of varactor diodes connected in a back-to-back form, and the cathodes of each pair of varactor diodes are connected to the bias voltage through a resistor, and adjusted The change of the bias voltage corresponds to the capacitance value of the variable capacitance diode, so as to realize the reconstruction of the cutoff frequency of the high-pass filter unit.
优选的,所述主传输线包括顺次连接的第一微带线、第二微带线、第三微带线、第四微带线和第五微带线,第一微带线通过定值电容连接低通滤波单元的微带传输线,第一微带线与第二微带线之间通过第一变容二极管连接,第二微带线与第三微带线之间通过第二变容二极管连接,第一变容二极管与第二变容二极管构成背靠背连接形式;第三微带线与第四微带线之间、第四微带线与第五微带线之间以及第五微带线与输出微带线之间分别连接有一个定值电容;第一微带线、第三微带线、第四微带线和第五微带线上分别连接有一个所述的谐振支节,且均连接有一个接地电阻,第二微带线上通过电阻连接偏置电压。Preferably, the main transmission line includes a first microstrip line, a second microstrip line, a third microstrip line, a fourth microstrip line and a fifth microstrip line connected in sequence, and the first microstrip line passes a fixed value The capacitor is connected to the microstrip transmission line of the low-pass filter unit, the first microstrip line and the second microstrip line are connected through the first varactor diode, and the second microstrip line and the third microstrip line are connected through the second varactor Diode connection, the first varactor diode and the second varactor diode form a back-to-back connection form; between the third microstrip line and the fourth microstrip line, between the fourth microstrip line and the fifth microstrip line, and between the fifth microstrip line A fixed-value capacitor is respectively connected between the strip line and the output microstrip line; the first microstrip line, the third microstrip line, the fourth microstrip line and the fifth microstrip line are respectively connected with a resonant branch nodes, and are connected to a grounding resistor, and the second microstrip line is connected to the bias voltage through the resistor.
本发明的显著进步性至少体现在:Significant progress of the present invention is at least reflected in:
提供的一种具有超宽变频范围的可调滤波模组利用变容二极管调谐和开关切换的方法,在2-18GHz的超宽频率范围内实现了对滤波器中心频率及相对带宽的灵活控制。其中,分别使用变容二极管加载微带电路与变容二极管加载缺陷地电路实现低频与高频范围的独立可调滤波模块,再利用单刀多掷开关将多个可调滤波模块并行连接,实现滤波器变频范围的有效扩展。An adjustable filter module with an ultra-wide variable frequency range is provided, which realizes flexible control of the center frequency and relative bandwidth of the filter in the ultra-wide frequency range of 2-18 GHz by using the varactor diode tuning and switching methods. Among them, the varactor diode is used to load the microstrip circuit and the varactor diode is used to load the defective ground circuit to realize independent adjustable filter modules in the low frequency and high frequency ranges, and then use single-pole multi-throw switches to connect multiple adjustable filter modules in parallel to realize filtering Effective extension of the inverter frequency range.
附图说明Description of drawings
图1为本发明实施例的可调滤波模组的电路拓扑结构图;Fig. 1 is the circuit topological structure diagram of the adjustable filter module of the embodiment of the present invention;
图2为本发明实施例的第一滤波电路的电路结构图;Fig. 2 is the circuit structural diagram of the first filtering circuit of the embodiment of the present invention;
图3为本发明实施例的第二滤波电路的电路结构图;Fig. 3 is the circuit structural diagram of the second filtering circuit of the embodiment of the present invention;
图4为本发明实施例的可调滤波模组的S21参数仿真曲线图;Fig. 4 is the S21 parameter simulation graph of the adjustable filter module of the embodiment of the present invention;
图5为本发明实施例的可调滤波模组的S11参数仿真曲线图。FIG. 5 is a simulation curve diagram of the S11 parameter of the adjustable filter module according to the embodiment of the present invention.
具体实施方式detailed description
下面结合附图对本发明作进一步的阐述说明,应该说明的是,本发明的实施方式并不限于所提供的实施例。The present invention will be further described below in conjunction with the accompanying drawings. It should be noted that the embodiments of the present invention are not limited to the provided examples.
参阅图1为一种实施例的可调滤波模组的电路拓扑结构图,本实施例的可调滤波模组包含一个数字控制电路、N个可调滤波模块以及分别连接信号输入端(端口1)和输出端(端口2)的两个单刀多掷开关,N个可调滤波模块并行连接在两个单刀多掷开关之间,形成N条相互独立的滤波通路,且每条滤波通路均具有不同的工作频率调谐范围;数字控制电路向两个单刀多掷开关输出控制信号,选择确定所需频率范围对应的滤波通路,同时由数字控制电路向对应可调滤波模块输出控制电压,以改变滤波模块中变容二极管的工作状态,实现对滤波性能的调节。本实施例方案中,利用单刀多掷开关将N个具有不同工作频率范围的可调滤波模块并行连接,有效扩展了可调滤波模组的工作频率调谐范围,实现超宽频率范围的连续调节,显著增强了调节的灵活性。由数字控制电路控制单刀多掷开关接通过对应的滤波通路,并实现可调滤波模块的滤波性能调节,增强了调节的快捷性。Referring to Fig. 1, it is a circuit topology diagram of an adjustable filter module of an embodiment, the adjustable filter module of the present embodiment comprises a digital control circuit, N adjustable filter modules and respectively connected signal input terminals (port 1 ) and two SPMT switches at the output terminal (port 2), N adjustable filter modules are connected in parallel between the two SPMT switches to form N mutually independent filter paths, and each filter path has Different operating frequency tuning ranges; the digital control circuit outputs control signals to two single-pole multi-throw switches to select and determine the filter path corresponding to the required frequency range, and at the same time, the digital control circuit outputs control voltage to the corresponding adjustable filter module to change the filter. The working state of the varactor diode in the module realizes the adjustment of the filtering performance. In the solution of this embodiment, N adjustable filter modules with different operating frequency ranges are connected in parallel by using a single-pole multi-throw switch, which effectively expands the operating frequency tuning range of the adjustable filter module and realizes continuous adjustment of an ultra-wide frequency range. Significantly enhanced the flexibility of adjustment. The single-pole multi-throw switch is controlled by the digital control circuit to connect to the corresponding filter path, and the filter performance adjustment of the adjustable filter module is realized, which enhances the quickness of adjustment.
作为一种优选的,N个可调滤波模块的工作频率范围覆盖2GHz-18GHz,对于2GHz-7GHz范围,采用具有第一滤波电路的可调滤波模块,所述第一滤波电路为加载变容二极管的微带电路结构;对于7GHz-18GHz范围,采用具有第二滤波电路的可调滤波模块,所述第二滤波电路包括级联的高通滤波单元和低通滤波单元,低通滤波单元采用缺陷地结构,高通滤波单元采用微带结构。在本实施例中,分别采用二极管加载微带电路和缺陷地电路在低频范围和高频范围实现所需的可调滤波性能,具有针对性地解决了低频范围内电路尺寸大以及高频范围内插入损耗大的技术难题。As a preference, the operating frequency range of the N adjustable filter modules covers 2GHz-18GHz, and for the range of 2GHz-7GHz, an adjustable filter module with a first filter circuit is used, and the first filter circuit is a loaded varactor diode Microstrip circuit structure; for the 7GHz-18GHz range, an adjustable filter module with a second filter circuit is used, and the second filter circuit includes a cascaded high-pass filter unit and a low-pass filter unit, and the low-pass filter unit adopts a defect ground Structure, the high-pass filter unit adopts microstrip structure. In this embodiment, the diode-loaded microstrip circuit and the defective ground circuit are respectively used to achieve the required adjustable filtering performance in the low frequency range and high frequency range, which specifically solves the problem of large circuit size in the low frequency range and high frequency range. The technical problem of large insertion loss.
参阅图2所示,作为一种优选的,所述第一滤波电路采用50欧姆微带传输线作为输入(Port1)和输出(Port2),输入和输出之间连接有两个相互级联的十字形微带谐振器,每个十字形微带谐振器包括相互垂直的水平微带线和垂直微带线,水平微带线的两端分别加载有一对背靠背形式连接的变容二极管。具体的,在两个十字形微带谐振器的水平微带线端部位置分别加载有变容二极管C4、C5、C6以及C7,变容二极管C4和C5的阴极分别通过电阻连接同一个直流偏置(DC Bias),变容二极管C6和C7的阴极分别通过电阻连接同一个直流偏置。由此,可通过直流偏置改变十字形微带谐振器上加载的变容二极管C4、C5、C6、C7的容值,从而实现第一滤波电路中心频率的调节。Referring to Fig. 2, as a kind of preference, described first filter circuit adopts 50 ohm microstrip transmission line as input (Port1) and output (Port2), and two mutually cascaded cross-shaped A microstrip resonator, each cross-shaped microstrip resonator includes a horizontal microstrip line and a vertical microstrip line perpendicular to each other, and a pair of varactor diodes connected back-to-back are respectively loaded on both ends of the horizontal microstrip line. Specifically, varactor diodes C4, C5, C6, and C7 are respectively loaded at the ends of the horizontal microstrip line of the two cross-shaped microstrip resonators, and the cathodes of the varactor diodes C4 and C5 are respectively connected to the same DC bias through resistors. Set (DC Bias), the cathodes of varactor diodes C6 and C7 are respectively connected to the same DC bias through resistors. Therefore, the capacitance values of the varactor diodes C4 , C5 , C6 , and C7 loaded on the cross-shaped microstrip resonator can be changed through the DC bias, thereby realizing the adjustment of the center frequency of the first filter circuit.
作为进一步的优选,垂直微带线的两端分别加载有一对背靠背形式连接的变容二极管,具体的,两个十字形微带谐振器的垂直微带线中的短支节上分别加载变容二极管C9和C11,垂直微带线中的长支节上分别加载变容二极管C8和C10,变容二极管C9和C11的阴极分别通过电阻连接同一个直流偏置,变容二极管C8和C10的阴极分别通过电阻连接同一个直流偏置。可以理解的是,十字形微带谐振器的垂直微带线用于产生传输零点,其中,短支节产生高频零点,长支节产生低频零点。进一步的,两个十字形微带谐振器的水平微带线之间通过一对背靠背形式连接的变容二极管C3连接,一个十字形微带谐振器的水平微带线通过顺次连接的变容二极管C1和定值电容连接到输入微带线,另一个十字形微带谐振器的水平微带线通过顺次连接的变容二极管C2和定值电容连接到输出微带线,变容二极管C1、C2和C3的阴极均通过电阻连接直流偏置。本实施例方案中,变容二极管C1-C3作为耦合电容主要用于调节带内回波,通过在支节上加载的变容二极管C8-C11以及连接在水平微带线上的变容二极管C1-C3一起配合具有调整滤波通带带宽的功能,也提高了滤波器的带外抑制性能。应该说明的是,以上变容二极管C1-C11中,变容二极管C1和C3均包含一个变容二极管;变容二极管C2、C4、C5、C6、C7、C8、C9、C10、C11均包括一对背靠背形式连接的二极管,且连接结构均为:其中一个二极管的阳极连接在对应微带线上,另一个二极管的阳极进行接地。As a further preference, the two ends of the vertical microstrip line are respectively loaded with a pair of varactor diodes connected in a back-to-back form. Specifically, the short branches in the vertical microstrip line of the two cross-shaped microstrip resonators are respectively loaded with varactors. Diodes C9 and C11, varactor diodes C8 and C10 are respectively loaded on the long branches in the vertical microstrip line, the cathodes of varactor diodes C9 and C11 are respectively connected to the same DC bias through resistors, and the cathodes of varactor diodes C8 and C10 Connect to the same DC bias through resistors respectively. It can be understood that the vertical microstrip lines of the cross-shaped microstrip resonator are used to generate transmission zeros, wherein the short legs generate high-frequency nulls, and the long legs generate low-frequency zeros. Further, the horizontal microstrip lines of two cross-shaped microstrip resonators are connected through a pair of back-to-back varactor diodes C3, and the horizontal microstrip lines of one cross-shaped microstrip resonator are connected through sequentially connected varactors The diode C1 and the fixed value capacitor are connected to the input microstrip line, and the horizontal microstrip line of another cross-shaped microstrip resonator is connected to the output microstrip line through the sequentially connected varactor diode C2 and the fixed value capacitor, and the varactor diode C1 , The cathodes of C2 and C3 are connected to DC bias through resistors. In the solution of this embodiment, the varactor diodes C1-C3 are mainly used as coupling capacitors to adjust the in-band echo, through the varactor diodes C8-C11 loaded on the branch and the varactor diode C1 connected to the horizontal microstrip line The combination of -C3 has the function of adjusting the bandwidth of the filter passband, and also improves the out-of-band rejection performance of the filter. It should be noted that among the above varactor diodes C1-C11, varactor diodes C1 and C3 both include a varactor diode; varactor diodes C2, C4, C5, C6, C7, C8, C9, C10, and C11 all include a varactor diode. For diodes connected in back-to-back form, and the connection structure is: the anode of one of the diodes is connected to the corresponding microstrip line, and the anode of the other diode is grounded.
作为优选的,参阅图3所示,图3中(a)图为第二滤波电路结构示意图,图3中(b)图为低通滤波单元设置在基板底层的电路结构示意图,低通滤波单元包括在基板底层的接地金属平面上刻蚀凹槽形成的多个缺陷地单元,该缺陷地单元会对接地金属平面上的电流产生扰动效果,从而产生一个衰减极点;多个缺陷地单元以固定间距进行周期性排列,以形成低通滤波响应,缺陷地单元的正上方为设置在基板顶层的微带传输线,微带传输线的一端连接高通滤波单元。更进一步的,每个缺陷地单元的内侧形成有金属条,金属条与缺陷地单元外侧的接地金属平面通过缺陷地单元实现隔离,在每个所述缺陷地单元上均加载有变容二极管,变容二极管的阴极连接金属条,阳极连接接地金属平面,基板顶层设置有偏置网络,偏置网络通过金属通孔连接所述金属条,以通过偏置网络改变加载在缺陷地单元的变容二极管的电容值,从而调节低通滤波单元的截止频率。作为一种具体的,在缺陷地单元上分别加载变容二极管CV11,CV12,CV13,CV14,CV15,CV16,CV17,CV18,CV19,每个缺陷地单元内侧的金属条通过电阻连接金属通孔,再通过所述金属通孔连接设置在基板顶层的另一电阻后连到偏置电压V1,通过调节偏置电压V1控制改变缺陷地单元上的变容二极管的电容值,从而有效改变低通滤波单元的截止频率。As preferably, referring to shown in Fig. 3, among Fig. 3 (a) figure is the second filter circuit structure schematic diagram, among Fig. 3 (b) figure is the circuit structure schematic diagram that the low-pass filter unit is arranged on the bottom of the substrate, the low-pass filter unit Including a plurality of defective ground units formed by etching grooves on the ground metal plane at the bottom of the substrate, the defective ground units will have a disturbing effect on the current on the ground metal plane, thereby generating an attenuation pole; multiple defective ground units can be used to fix The intervals are arranged periodically to form a low-pass filter response, and the microstrip transmission line arranged on the top layer of the substrate is directly above the defect ground unit, and one end of the microstrip transmission line is connected to the high-pass filter unit. Furthermore, a metal strip is formed inside each defective ground unit, and the metal strip is isolated from the ground metal plane outside the defective ground unit through the defective ground unit, and each defective ground unit is loaded with a varactor diode, The cathode of the varactor diode is connected to the metal strip, the anode is connected to the ground metal plane, and the top layer of the substrate is provided with a bias network. The bias network is connected to the metal strip through a metal via to change the varactor loaded on the defective ground unit through the bias network. The capacitance value of the diode, thereby adjusting the cut-off frequency of the low-pass filter unit. As a specific example, varactor diodes CV11, CV12, CV13, CV14, CV15, CV16, CV17, CV18, and CV19 are respectively loaded on the defective ground unit, and the metal strips inside each defective ground unit are connected to metal vias through resistance. Then connect another resistor set on the top layer of the substrate through the metal through hole and then connect to the bias voltage V1. By adjusting the bias voltage V1, the capacitance value of the varactor diode on the defective ground unit can be changed, thereby effectively changing the low-pass filter. The unit's cutoff frequency.
参阅图3中(c)图所示为高通滤波单元的电路结构示意图,作为进一步的优选,高通滤波单元包含设置在基板顶层金属层的主传输线和四个谐振支节,四个谐振支节可以产生四个传输零点,用以提高滤波器的选择性和带外抑制特性;每个谐振支节上分别加载有一对背靠背形式连接的变容二极管,背靠背形式连接的变容二极管中的一个变容二极管的阳极连接主传输线,另一个变容二极管的阳极通过连接到金属通孔进行接地,每对变容二极管的阴极通过电阻R连接偏置电压,通过调节偏置电压改变对应变容二极管的电容值,实现对高通滤波单元截止频率的重构。具体的,谐振支节上加载的变容二极管具体为:第一谐振支节上的变容二极管CV211和CV212,第二谐振支节上的变容二极管CV311和CV312,第三谐振支节上的变容二极管CV411和CV412,第四谐振支节上的变容二极管CV511和CV512,第一谐振支节上的变容二极管通过偏置电压V2控制,第二谐振支节上的变容二极管通过偏置电压V3控制,第三谐振支节上的变容二极管通过偏置电压V4控制,第四谐振支节上的变容二极管通过偏置电压V5控制。更进一步的,所述主传输线包括顺次连接的第一微带线、第二微带线、第三微带线、第四微带线和第五微带线,第一微带线通过定值电容CF11连接低通滤波单元的微带传输线,第一微带线与第二微带线之间通过变容二极管CV611连接,第二微带线与第三微带线之间通过变容二极管CV612连接,变容二极管CV611的阴极与变容二极管CV612的阴极均连接在第二微带线上;第三微带线与第四微带线之间连接有定值电容CF12,第四微带线与第五微带线之间连接有定值电容CF13,第五微带线与输出微带线之间连接有定值电容CF14;第一微带线、第三微带线、第四微带线和第五微带线上分别连接有一个所述的谐振支节,且第一微带线、第三微带线、第四微带线和第五微带线上均连接有一个接地电阻,第二微带线上通过电阻连接偏置电压V6。可以理解的是,变容二极管CV611与CV612的作用是为了实现高通滤波单元调谐过程中的匹配,其电容值由偏置电压V6控制,接地电阻的作用是为了给变容二极管对提供直流接地。Referring to Figure 3, (c) shows a schematic diagram of the circuit structure of the high-pass filter unit. As a further preference, the high-pass filter unit includes a main transmission line arranged on the top metal layer of the substrate and four resonant branches, and the four resonant branches can be Four transmission zeros are generated to improve the selectivity and out-of-band suppression characteristics of the filter; each resonant branch is loaded with a pair of varactor diodes connected back-to-back, and one of the varactor diodes connected back-to-back The anode of the diode is connected to the main transmission line, and the anode of the other varactor diode is connected to the metal via for grounding. The cathode of each pair of varactor diodes is connected to the bias voltage through the resistor R, and the capacitance of the corresponding varactor diode is changed by adjusting the bias voltage. value to realize the reconstruction of the cutoff frequency of the high-pass filter unit. Specifically, the varactor diodes loaded on the resonant branch are specifically: the varactor diodes CV211 and CV212 on the first resonant branch, the varactor diodes CV311 and CV312 on the second resonant branch, and the varactor diodes CV312 on the third resonant branch. Varactor diodes CV411 and CV412, varactor diodes CV511 and CV512 on the fourth resonant branch, the varactor diode on the first resonant branch is controlled by bias voltage V2, and the varactor diode on the second resonant branch is biased by The varactor diode on the third resonant branch is controlled by the bias voltage V4, and the varactor diode on the fourth resonant branch is controlled by the bias voltage V5. Furthermore, the main transmission line includes a first microstrip line, a second microstrip line, a third microstrip line, a fourth microstrip line and a fifth microstrip line connected in sequence, and the first microstrip line passes through a fixed The value capacitor CF11 is connected to the microstrip transmission line of the low-pass filter unit, the first microstrip line and the second microstrip line are connected through a varactor diode CV611, and the second microstrip line and the third microstrip line are connected through a varactor diode CV612 is connected, the cathode of the varactor diode CV611 and the cathode of the varactor diode CV612 are connected to the second microstrip line; a fixed-value capacitor CF12 is connected between the third microstrip line and the fourth microstrip line, and the fourth microstrip line A fixed value capacitor CF13 is connected between the line and the fifth microstrip line, and a fixed value capacitor CF14 is connected between the fifth microstrip line and the output microstrip line; the first microstrip line, the third microstrip line, and the fourth microstrip line The strip line and the fifth microstrip line are respectively connected to one of the resonant branches, and the first microstrip line, the third microstrip line, the fourth microstrip line and the fifth microstrip line are all connected to a ground The second microstrip line is connected to the bias voltage V6 through the resistor. It can be understood that the function of varactor diodes CV611 and CV612 is to achieve matching during the tuning process of the high-pass filter unit, and their capacitance value is controlled by the bias voltage V6, and the function of the grounding resistor is to provide DC grounding for the varactor diode pair.
下面对本发明实施例的可调滤波模组进行滤波性能仿真,具体采用的设置包括:介质基板选用罗杰斯5880,5GHz--7GHz频段采用基板厚度为0.254mm,其它频段采用基板厚度为0.508mm。单刀多掷开关与可调滤波模块之间使用同轴传输线相连接,开关状态由数字控制电路输出的控制信号确定。工作频率范围在7GHz以下的可调滤波模块采用二极管加载的微带电路(第一滤波电路),工作频率范围在7GHz以上的可调滤波模块采用二极管加载的缺陷地电路(第二滤波电路)。The filter performance simulation of the adjustable filter module of the embodiment of the present invention is performed below. The specific settings include: Rogers 5880 is selected as the dielectric substrate, the thickness of the substrate is 0.254mm for the 5GHz--7GHz frequency band, and the thickness of the substrate for other frequency bands is 0.508mm. The single-pole multi-throw switch is connected with the adjustable filter module through a coaxial transmission line, and the switch state is determined by the control signal output by the digital control circuit. The adjustable filter module with a working frequency range below 7GHz uses a diode-loaded microstrip circuit (first filter circuit), and the adjustable filter module with a working frequency range above 7GHz uses a diode-loaded defective ground circuit (second filter circuit).
通过仿真分析,首先将2GHz--7GHz的频率范围分为2GHz--3.5GHz,3.5GHz--5GHz,5GHz--7GHz这三段进行调节。具体地,在2GHz--3.5GHz频段,变容二极管选用MA46H202,定值电容选用0603系列,容值为8pF,直流偏置电压通过电阻R为100K欧姆。在3.5GHz--5GHz频段变容二极管选用MA46H201与MA46H202,直流偏置电压通过电阻为100K欧姆,变容管处均为一对变容二极管背靠背方式连接,且级联一个缺陷地低通滤波器抑制谐波。在5GHz--7GHz频段,变容二极管选用MA46H201,直流偏置电压通过电阻为100K欧姆,由于电路尺寸变小,为方便焊接,变容管处均为定值电容加变容二极管方式连接。Through simulation analysis, first divide the frequency range of 2GHz--7GHz into three sections of 2GHz--3.5GHz, 3.5GHz--5GHz, and 5GHz--7GHz for adjustment. Specifically, in the 2GHz--3.5GHz frequency band, the variable capacitance diode is selected from MA46H202, the fixed value capacitor is selected from 0603 series, the capacitance value is 8pF, and the DC bias voltage passes through the resistor R to be 100K ohms. In the 3.5GHz--5GHz frequency band varactor diodes use MA46H201 and MA46H202, the DC bias voltage through the resistance is 100K ohms, the varactors are connected back to back with a pair of varactor diodes, and a defective low-pass filter is cascaded Suppresses harmonics. In the 5GHz--7GHz frequency band, the varactor diode is MA46H201, and the DC bias voltage passes through a resistance of 100K ohms. Since the circuit size becomes smaller, for the convenience of welding, the varactor is connected with a fixed value capacitor and a varactor diode.
对于7GHz-18GHz的频率范围,将频率范围划分为7GHz-9GHz,9GHz-11GHz,11GHz-13.5GHz,13.5GHz-16GHz,16GHz-18GHz这五段进行调节。具体地,变容二极管CV11,CV12,CV13,CV14,CV15,CV16,CV17,CV18,CV19选用MACOM公司的MAVR-011020-1411型号变容二极管,二极管CV211,CV212,CV311,CV312,CV411,CV412,CV511,CV512,CV611,CV612选用MACOM公司的MAVR-000120-1411型号变容二极管。电容CF11,CF12,CF13,CF14选用ATC公司的定值贴片电容。电阻选用封装型号0402的贴片电阻,阻值均为100K欧姆。For the frequency range of 7GHz-18GHz, the frequency range is divided into five segments of 7GHz-9GHz, 9GHz-11GHz, 11GHz-13.5GHz, 13.5GHz-16GHz, and 16GHz-18GHz for adjustment. Specifically, the varactor diodes CV11, CV12, CV13, CV14, CV15, CV16, CV17, CV18, and CV19 use the MAVR-011020-1411 type varactor diodes from MACOM, and the diodes CV211, CV212, CV311, CV312, CV411, CV412, CV511, CV512, CV611, CV612 select the MAVR-000120-1411 model variable capacitance diode of MACOM Company for use. Capacitors CF11, CF12, CF13, and CF14 use fixed-value chip capacitors from ATC Company. The resistors are chip resistors with package type 0402, and the resistance values are all 100K ohms.
图4和图5展示了本发明实施例的滤波模组在2GHz,4GHz,7GHz,12GHz以及18GHz的S参数响应曲线,其中实线对应相对带宽为30%,虚线对应相对带宽为20%。可以看出,通过调节开关状态和变容二极管偏置状态,该滤波模组可在2-18GHz频率范围内实现中心频率与带宽的连续可调,该结果表明本发明设计理念正确可行。4 and 5 show the S parameter response curves of the filter module of the embodiment of the present invention at 2GHz, 4GHz, 7GHz, 12GHz and 18GHz, wherein the solid line corresponds to a relative bandwidth of 30%, and the dashed line corresponds to a relative bandwidth of 20%. It can be seen that by adjusting the switch state and the bias state of the varactor diode, the filter module can realize continuous adjustment of the center frequency and bandwidth within the frequency range of 2-18 GHz. This result shows that the design concept of the present invention is correct and feasible.
以上所述,仅为本发明的具体实施方式,但本发明的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本发明揭露的技术范围内,可轻易想到变化或替换,都应涵盖在本发明的保护范围之内。因此,本发明的保护范围应所述以权利要求的保护范围为准。The above is only a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Anyone skilled in the art can easily think of changes or substitutions within the technical scope disclosed in the present invention. Should be covered within the protection scope of the present invention. Therefore, the protection scope of the present invention should be based on the protection scope of the claims.
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CN1901274B (en) * | 2006-07-27 | 2010-11-03 | 上海交通大学 | Super wide band plane microstrip filter |
CN202210797U (en) * | 2011-09-28 | 2012-05-02 | 四川九立微波有限公司 | Front end assembly of frequency-selecting receiver of multichannel microwave communication machine |
CN104733813B (en) * | 2015-03-16 | 2017-06-06 | 华南理工大学 | Broadband band-pass filter with reconfigurable frequency and bandwidth |
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2021
- 2021-05-07 CN CN202110498584.XA patent/CN113422181B/en not_active Expired - Fee Related
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