CN113411129A - Duplex device and system for optical communication - Google Patents
Duplex device and system for optical communication Download PDFInfo
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- CN113411129A CN113411129A CN202110674357.8A CN202110674357A CN113411129A CN 113411129 A CN113411129 A CN 113411129A CN 202110674357 A CN202110674357 A CN 202110674357A CN 113411129 A CN113411129 A CN 113411129A
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/25—Arrangements specific to fibre transmission
- H04B10/2589—Bidirectional transmission
- H04B10/25891—Transmission components
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/29—Repeaters
- H04B10/291—Repeaters in which processing or amplification is carried out without conversion of the main signal from optical form
- H04B10/297—Bidirectional amplification
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Abstract
The invention provides a duplex device and a system for optical communication, which are composed of an integrated optoelectronic chip (1), a laser (2), a mode switching control circuit (3), a first bias voltage circuit (4), a trans-impedance amplifier (5), a signal processing module (6), an optical fiber (7), a grounding interface (8), a first switch unit (9), a second switch unit (10) and a second bias voltage circuit (11). The invention integrates two functions of optical signal amplification and photoelectric detection into the same device, so that the chip has more functions, lower power consumption and production cost, smaller space occupation and greatly improved reliability, and the chip is controlled by an external control circuit to work in different working modes; the optical fiber sensing device can be widely applied to the fields of optical fiber communication, optical fiber sensing, photoelectric detection and the like.
Description
(I) technical field
The invention designs a duplex device and a system for optical communication, which can be widely applied to optical fiber communication, optical fiber sensing and photoelectric measurement; belongs to the technical field of optical fiber communication.
(II) background of the invention
In recent years, with the rapid development of electronic technology, the degree of integration of integrated circuits has been increasing, the switching speed of devices has been also increasing, and the speed of electronics has been brought to the utmost, and the position of optoelectronic devices has become increasingly important in order to achieve high speed, wide bandwidth, and large capacity of information acquisition, access, processing, and application in information systems. However, in terms of current development, the low integration level of the optoelectronic device is a difficult problem limiting the development of the optoelectronic device, and by researching the duplex device based on the optoelectronic integrated chip, the functional limitation of the discrete device is broken through, so that the functions of the chip are improved, the power consumption is reduced, the production cost is lower, the space occupation is smaller, and the reliability is greatly improved.
The working principle of the quantum well structure integrated optoelectronic chip is as follows: the active area is a gain area, when a forward current is injected and reaches a certain value, free electrons in an N area are increased and continuously enter a quantum well to be compounded with holes, energy is released in a photon form, the photons form stimulated radiation under the induction of an input optical signal, the released photons and incident photons have the same frequency, the same direction, the same phase, the same polarization direction and the same mode, and the photons are continuously induced to generate stimulated radiation when advancing continuously, so that more new photons are generated, and the input optical signal is amplified; for a quantum well structure formed by a wide band gap material, a specific energy level is formed in a quantum well through the design of the quantum well structure and doping, and electrons in the quantum well integrated photoelectron chip are excited from a ground state to an excited state under the action of incident light of a waveguide layer; by applying a reverse bias voltage, electrons in an excited state form a current, and a photocurrent signal can be obtained.
Aiming at a duplex device and a system for optical communication, moon and ashush et al disclose 'an integrated photoelectric device comprising a semiconductor optical amplifier and a photodiode' in 2009 (Chinese patent (CN200610110661.5), which manufactures a photoelectric integrated receiving device for optical signals through InPAS Ga materials, integrates the optical amplifier and the photodiode into one device to realize high integration of the photoelectric device, Lichen et al disclose 'a micro underwater visible light communication duplex device based on heterogeneous bonding and a preparation method thereof' in 2017 (Chinese patent (CN201710240402.2), which integrates a thin film LED blue light emitting device and a photoelectric sensor device through a silicon substrate nitride wafer and an N-type doped silicon wafer to realize simultaneous duplex underwater visible light communication, Xin Li et al use an InP material double etching process to prepare an AlInGaAs MQW diode to be connected through a straight waveguide, integrating the Light emitter with the photodiode to realize Multiple functions of Integrated optoelectronic devices (Li, Xin, et al, AlInGaAs Multiple Quantum Well-Integrated Device with Multiple-function Light Emission/Detection and Electro-optical Modulation in the Near-isolated range ACS Omega,2021.612: p.8687-8692); K. shiu et al monolithically integrate an optical amplifier with a photodiode by dual waveguide (ATG) Technology, providing a powerful method for further implementing complex photonic integrated circuits (K. -. Shiu, S.S.Agache and S.R.Forrest, "A single monolithic integrated optical receiver coupling of an optical amplifier and a p-i-n photodiode," in IEEE Photonics technologies Letters, vol.18, No.8, pp.956-958, April 2006); the above design has the following drawbacks and disadvantages: (1) the function of the integrated photoelectric device of the semiconductor optical amplifier and the photodiode is realized singly; (2) the duplex device for visible light communication realized by a heterogeneous bonding mode has a complex manufacturing process and is only suitable for a blue light wave band; (3) by adopting the technology of carrying out monolithic integration on the AlInGaAs MQW diode, the occupied area of the device is overlarge, and the applicability is poor; (4) the optical amplifier and the photodiode are integrated in a single chip by a double-waveguide ATG technology, the main function of the optical amplifier is applied to an optical receiver, and the function is relatively single.
In order to solve the problems, the invention discloses a duplex device and a system for optical communication, which can be widely applied to the fields of optical fiber communication, optical fiber sensing, photoelectric measurement and the like; the device and the system realize the integration of two working modes A (photoelectric detection) or B (optical signal amplification) of the device by utilizing the quantum well structure integrated optoelectronic chip to be matched with the external mode switching control circuit, realize the flexible and convenient work of the integrated optoelectronic chip under the A (photoelectric detection) or B (optical signal amplification) mode through the control of the mode switching control circuit on the switch unit, realize the high integration degree of the optoelectronic device, enrich the functions of the chip, reduce the loss of the optical signal in the light splitting and coupling processes and reduce the power consumption.
Disclosure of the invention
The invention aims to provide a duplex device and a system for optical communication, which can be widely applied to the fields of optical fiber communication, optical fiber sensing, photoelectric measurement and the like;
a duplex device and a system for optical communication are composed of an integrated optoelectronic chip (1), a laser (2), a mode switching control circuit (3), a first bias voltage circuit (4), a trans-impedance amplifier (5), a signal processing module (6), an optical fiber (7), a grounding interface (8), a first switch unit (9), a second switch unit (10) and a second bias voltage circuit (11).
The invention is realized in the following way that an integrated photoelectron chip (1) is packaged in the integrated photoelectron chip package, one side of an optical fiber (7) is coupled with the integrated photoelectron chip (1), the other side is connected with an external optical path, one end of a laser (2) is connected with a mode switching control circuit (3), the mode switching control circuit (3) provides working voltage for the laser (2) to work, and the other end is coupled with the integrated photoelectron chip (1) through the optical fiber; the upper side of the integrated photoelectron chip (1) is a cathode of the chip, the lower side of the integrated photoelectron chip (1) is an anode of the chip, the upper side of the integrated photoelectron chip (1) is connected with the first bias voltage circuit (4) or the grounding interface (9) through the second switch unit (10), the lower side of the integrated photoelectron chip (1) is connected with the transimpedance amplifier (5) or the second bias voltage circuit (11) through the first switch unit (9), and the transimpedance amplifier (5) converts photocurrent output by the integrated photoelectron chip (1) into a voltage signal; the signal processing module (6) processes and analyzes the voltage signal output by the trans-impedance amplifier (5); the first bias voltage circuit (4) works in an A mode and provides a reverse bias voltage for working for the integrated optoelectronic chip (1); the second bias voltage circuit (11) works in a mode B and provides a forward bias voltage for working for the integrated optoelectronic chip (1); the mode switching control circuit (3) controls the output states of all the switch units, and ensures that the whole system works in an A (photoelectric detection) mode and a B (optical signal amplification) mode.
The diameter of the fiber core of the optical fiber (7) and the number of the optical fibers in the system are not limited, and the input end of the optical fiber is in end-face coupling with the integrated optoelectronic chip on the end face to realize the optimal coupling efficiency; one end coupled to the integrated optoelectronic chip package operates as an input end in an a (photodetection) mode and as an output end in a B (optical signal amplification) mode.
The integrated optoelectronic chip (1) in the system is a chip manufactured based on a standard integrated circuit, the structure of the integrated optoelectronic chip (1) is a quantum well structure, and an optical signal can be amplified under forward bias; photoelectric detection can be carried out under reverse bias; the integrated photoelectronic chip (1) is packaged in the integrated photoelectronic chip package, and adverse factors (such as environmental light pollution, dust and the like) in the external environment are prevented from influencing the integrated photoelectronic chip (1).
The mode switching control circuit (3) in the system is based on any one of a digital circuit, a microcontroller and a field programmable gate array; the number of output ends of the mode switching control circuit (3) is equal to the number of the first switch units (9) and the first switch units (10), and each output end is connected with and controls one switch unit; the mode switching control circuit (3) is used for controlling the output state of each switch unit in the first switch unit (9) and realizing the selective connection of the integrated optoelectronic chip (1) with the trans-impedance amplifier (5) or the second bias voltage circuit (11), and the mode switching control circuit (3) is used for controlling the output state of each switch unit in the second switch unit (10) and realizing the selective connection of the integrated optoelectronic chip (1) with the first bias voltage circuit (4) or the grounding interface (8); when the system works in an A (photoelectric detection) mode, a switch unit (9) is connected with a transimpedance amplifier (5), a switch unit (11) is connected with a first bias voltage circuit (4), and each transimpedance amplifier is connected with an integrated optoelectronic chip (1); when the integrated optoelectronic chip works in a B (optical signal amplification) mode, the mode switching control circuit provides working voltage for the laser (2), the output of the first switch unit (9) and the second bias voltage circuit (11) are placed in a closed state, the output of the second switch unit (10) and the grounding interface (8) are placed in a closed state, and the working voltage is provided for the integrated optoelectronic chip (1).
The bias circuit (4) or (11) in the system can be a DC-DC or AC-DC voltage source, and the function of the bias circuit is to provide DC voltage required by the operation of the integrated optoelectronic chip (1).
The laser (2) in the system can be any one of a gas laser, a solid laser and a semiconductor laser, one end of the laser (2) is connected with a mode switching control circuit, the other end of the laser is connected with the integrated optoelectronic chip (1) through an optical fiber, when the system works in a B (optical signal amplification) mode, the mode switching control circuit supplies working voltage to the laser (2), the mode switching control circuit is used for generating light with fixed wavelength and is connected with the integrated optoelectronic chip (1) through the optical fiber.
The signal processing module (6) in the system can be any one of a digital circuit, a microcontroller and a field programmable gate array, and the function of the signal processing module is to perform corresponding data processing and analysis on the voltage signal output by the trans-impedance amplifier (5).
(IV) description of the drawings
Fig. 1 is a schematic diagram of a duplex device and a system for optical communication, which is composed of an integrated optoelectronic chip (1), a laser (2), a mode switching control circuit (3), a first bias voltage circuit (3), a transimpedance amplifier (5), a signal processing module (6), an optical fiber (7), a ground interface (8), a first switch unit (9), a second switch unit (10), and a second bias voltage circuit (11).
FIG. 2 is a cross-sectional view of an integrated optoelectronic chip (1) device with metal layers on the top and bottom, the cathode (cathode) of the device on the top, and the anode (anode) of the device on the bottom; the waveguide layer (InPGaas) is a formed quantum well active region, the quantum well structure is formed by InPGaas components with different components, the middle is a thin semiconductor film, potential energy of each region and the middle semiconductor layer form a potential well when no bias voltage is applied, namely, the potential well is called as a quantum well, the integrated optoelectronic chip (1) is formed by an active region and a passive region, the active region is a gain region, when forward current is injected into the integrated optoelectronic chip (1) and reaches a certain value, free electrons in an N region are increased and continuously enter the quantum well to be compounded with holes, energy is released in a photon form, the photons form stimulated radiation under the induction of an input optical signal, the released photons and incident photons have the same frequency, the same direction, the same phase, the same polarization direction and the same mode, and are continuously induced to generate stimulated radiation when the photons continuously advance, so that more new photons are generated, amplifying the input optical signal; for a quantum well structure formed by a wide band gap material, a specific energy level is formed in a quantum well through the design of the quantum well structure and doping, and electrons in the quantum well integrated photoelectron chip are excited from a ground state to an excited state under the action of incident light of a waveguide layer; by applying a reverse bias voltage, electrons in an excited state form a current, and a photocurrent signal can be obtained.
Fig. 3 is a schematic diagram of an embodiment of a duplex device and system for optical communication, which is composed of an integrated optoelectronic chip (1), four lasers (2), a mode switching control circuit (3), a first bias voltage circuit (4), a transimpedance amplifier (5), a signal processing module (6), four external optical fibers (7), a ground interface (8), a first switch unit (9), a second switch unit (10), and a second bias voltage circuit (11); the integrated photoelectronic chip (1) is of a quantum well structure, works to amplify optical signals under forward bias and works to detect optical signals under reverse bias; the mode switching control circuit (3) determines that the system works in an A (photoelectric detection) mode and a B (optical signal amplification) mode by controlling the output state of the switch unit; in an A (photoelectric detection) mode, a mode switching control circuit (3) controls an upper side switch unit (10) of an integrated optoelectronic chip (1) to be connected with a first bias voltage circuit (4), a lower side first switch unit (9) of the integrated optoelectronic chip is connected with a transimpedance amplifier (5), the transimpedance amplifier (5) converts detected light current into a voltage signal, the other end of the transimpedance amplifier (5) is connected with a signal processing module (6), and the signal processing module (6) performs corresponding data processing and analysis on the voltage signal output by the transimpedance amplifier (5); in a B (optical signal amplification) mode, a mode switching control circuit (3) controls an upper second switch unit (10) to be connected with a grounding interface (8), controls a lower first switch unit (9) to be connected with a second bias voltage circuit (11) to provide working voltage for an integrated optoelectronic chip (1), provides working voltage for a laser (2), and amplifies optical signals through the integrated optoelectronic chip (1) and couples the optical signals with an external optical path through optical fibers, wherein the laser generated by the laser is coupled with the integrated optoelectronic chip (1) through the optical fibers;
FIG. 4 is a diagram showing an internal structure of a chip and a connection between a laser and an optical fiber in the embodiment; the integrated optoelectronic chip comprises four first optical fibers (1), an integrated optoelectronic chip (2), four second optical fibers (3) and a laser (4); the laser (4) is coupled and connected with the end face of the integrated optoelectronic chip (2) through a second optical fiber (3); one end of the first optical fiber (1) is connected with the integrated photoelectronic chip (2) in an end face coupling mode, and the other end of the first optical fiber is connected with an external optical path.
(V) detailed description of the preferred embodiments
The invention is further illustrated below with reference to specific examples.
Fig. 3 shows an embodiment of a duplex device and system for optical communication, which is composed of an integrated optoelectronic chip (1), a laser (2), a mode switching control circuit (3), a first bias voltage circuit (4), a transimpedance amplifier (5), a signal processing module (6), four external optical fibers (7), a ground interface (8), a first switch unit (9), a second switch unit (10), and a second bias voltage circuit (11); FIG. 4 is a diagram showing an internal structure of a chip and a schematic diagram showing connection with a laser and an optical fiber in the embodiment; the integrated optoelectronic chip comprises four first optical fibers (1), an integrated optoelectronic chip (2), four second optical fibers (3) and a laser (4); the laser (4) is coupled and connected with the end face of the integrated optoelectronic chip (1) through a second optical fiber (3); one end of the first optical fiber (1) is connected with the integrated photoelectronic chip (2) in an end face coupling mode, and the other end of the first optical fiber is connected with an external optical path; FIG. 3 illustrates an integrated optoelectronic chip (1) packaged in an integrated optoelectronic chip package; the four lasers (3) are coupled and connected with the integrated optoelectronic chip (1) through optical fibers; the upper side of the integrated photoelectron chip (1) is a cathode, and the lower side is an anode; one side of the second switch unit (10) is connected with a metal pad connected with the cathode of the integrated optoelectronic chip (1) in parallel, so that the input of the integrated optoelectronic chip (1) is connected with the first bias voltage circuit (4) or the output of the integrated optoelectronic chip (1) is connected with the grounding interface (8); one side of the first switch unit (9) is connected with a metal pad of the anode of the integrated optoelectronic chip (1), so that the output of the integrated optoelectronic chip (1) is connected with the transimpedance amplifier (5) or the input of the integrated optoelectronic chip (1) is connected with the second bias voltage circuit (11); the trans-impedance amplifier (5) converts photocurrent output by the integrated optoelectronic chip (1) into a voltage signal, and the signal processing module (6) processes and analyzes the voltage signal output by the trans-impedance amplifier (5); the mode switching control circuit (3) is connected with the first switch unit (9) or the second switch unit (10) and controls the output state of the switch units so as to control the working state of the whole system, in the A (photoelectric detection) state, the mode switching control circuit (3) controls the upper switch unit (10) of the integrated optoelectronic chip to be connected with the first bias voltage circuit (4), the lower first switch unit (9) is connected with the transimpedance amplifier (5), the transimpedance amplifier (5) converts the detected photocurrent into a voltage signal, the other end of the transimpedance amplifier (5) is connected with the signal processing module, and the signal processing module (6) demodulates the voltage signal output by the transimpedance amplifier (5) into an original electrical signal and performs corresponding data processing and analysis; b (optical signal amplification) state, mode switching control circuit (3) control upside second switch unit (10) connect ground connection interface (8), control downside second switch unit (9) connect second bias voltage circuit (11) and provide operating voltage for integrated optoelectronic chip (1), mode switching control circuit (3) provide operating voltage for laser instrument (2), the laser that the laser instrument produced passes through optic fibre and integrated optoelectronic chip (1) coupling connection, through integrated optoelectronic chip (1) optical signal amplify and pass through optic fibre output and with external optical path coupling connection.
Claims (11)
1. A duplex device and a system for optical communication are composed of an integrated optoelectronic chip (1), a laser (2), a mode switching control circuit (3), a first bias voltage circuit (4), a trans-impedance amplifier (5), a signal processing module (6), an optical fiber (7), a grounding interface (8), a first switch unit (9), a second switch unit (10) and a second bias voltage circuit (11); in the system, an integrated photoelectron chip (1) is packaged in the integrated photoelectron chip package, a laser (2) is coupled with the integrated photoelectron chip (1) through an optical fiber, the integrated photoelectron chip (1) is coupled with an external optical path through an optical fiber (7), a first bias voltage circuit (4) or a second bias voltage circuit (11) is used for providing direct current voltage for the integrated photoelectron chip (1) to work, and the integrated photoelectron chip (1) is connected with a grounding interface (8) to be grounded; the integrated optoelectronic chip (1) is connected with the corresponding first switch unit (9) and the second switch unit (10), the mode switching control circuit (3) controls the output of the switch units to enable the whole system to work in an A (photoelectric detection) or B (optical signal amplification) mode, the input of the integrated optoelectronic chip (1) in the A (photoelectric detection) mode is ensured to be connected with a bias voltage circuit, the output of the integrated optoelectronic chip is connected with the corresponding trans-resistance amplifier (5), the trans-resistance amplifier (5) converts the optical current output by the integrated optoelectronic chip (1) into a voltage signal, and the signal processing module (6) processes and analyzes the voltage signal output by the trans-resistance amplifier (5); the input of the integrated optoelectronic chip (1) is ensured to be connected with a bias voltage circuit under a B (optical signal amplification) mode, and the output is connected with a grounding interface (8) for amplifying the input optical signal.
2. The duplexing apparatus and system for optical communication according to claim 1, wherein: the integrated photoelectron chip (1) is of a quantum well structure, and the quantum well structure is formed by InPGaas with different components; the integrated photoelectronic chip (1) can work in two modes of A (photoelectric detection) and B (optical signal amplification) under the control of the mode switching control circuit (3), when forward current is injected into the integrated photoelectronic chip (2) and reaches a certain value, free electrons in an N region are increased and continuously enter a quantum well to be compounded with holes, energy is released in a photon form, the photons form stimulated radiation under the induction of an input optical signal, the released photons and the incident photons have the same frequency, the same direction, the same phase, the same polarization direction and the same mode, and continuously receive the induction to generate the stimulated radiation when the photons continuously advance, so that more new photons are generated, and the input optical signal is amplified; for a quantum well structure made of an InPGaas wide band gap material, a specific energy level is formed in the quantum well through the design of the quantum well structure and doping, electrons in the quantum well are excited from a ground state to an excited state under the action of incident light of a waveguide layer, and the electrons in the excited state form current through the application of a reverse bias voltage, so that a photocurrent signal can be obtained.
3. The duplexing apparatus and system for optical communication according to claim 1, wherein: the integrated optoelectronic chip (1) converts detected photons into photocurrent when operating in mode a (photodetection) in a reverse bias process; operating in a mode B (optical signal amplification) in a forward bias voltage, and amplifying an input optical signal; the operation modes A (photodetection) and B (optical signal amplification) are switched by a mode switching control circuit (3).
4. The duplexing apparatus and system for optical communication according to claim 1, wherein: the first bias voltage circuit (4) and the second bias voltage circuit (11) can be direct current-direct current or alternating current-direct current voltage sources, and the function of the first bias voltage circuit and the second bias voltage circuit is to provide direct current voltage required by operation for the integrated optoelectronic chip (1).
5. The duplexing apparatus and system for optical communication according to claim 1, wherein: the integrated photoelectron chip (1) is an array chip manufactured based on a standard integrated circuit, works as B (optical signal amplification) during forward bias, works as A (photoelectric detection) during reverse bias, and the integrated photoelectron chip (1) can be packaged to prevent adverse factors (such as environmental light pollution, dust and the like) in the external environment from influencing the integrated photoelectron chip (1).
6. The duplexing apparatus and system for optical communication according to claim 1, wherein: the number of the switch units (9) is equal to the number of the outputs of the integrated optoelectronic chips (1), and the input end of each switch unit is connected with the output end of the corresponding integrated optoelectronic chip (1); the switch units adopt a single-input-double-output structure, the number of the input ends of each switch unit is equal to that of the transimpedance amplifiers connected with the switch units, and the output end of each switch unit (9) is sequentially connected with the input end of the corresponding transimpedance amplifier (5).
7. The duplexing apparatus and system for optical communication according to claim 1, wherein: the mode switching control circuit (3) may be any one of a digital circuit, a microcontroller and a field programmable gate array based; the number of output ends of the mode switching control circuit (3) is equal to the number of the first switch units (9) and the second switch units (10), and each output end is connected with and controls one switch unit; the mode switching control circuit (3) is used for controlling the output state of each switch unit in the first switch unit (9) or the second switch unit (10) and realizing that the integrated optoelectronic chip (1) is selectively connected with the transimpedance amplifier (5) and the first bias voltage circuit (4) or selectively connected with the grounding interface (8) and the second bias voltage circuit (11); and provides working voltage for the laser (2) to ensure that the whole system works in A (photoelectric detection) and B (optical signal amplification) modes.
8. The duplexing apparatus and system for optical communication according to claim 1, wherein: the number of the trans-impedance amplifiers (5) is equal to that of the outputs of the integrated optoelectronic chip (1), and the trans-impedance amplifiers are used for amplifying the input photocurrent signals and converting the input photocurrent signals into voltage signals for outputting.
9. The duplexing apparatus and system for optical communication according to claim 1, wherein: the signal processing module (6) can be any one of a digital circuit, a microcontroller and a field programmable gate array, and is used for carrying out corresponding data processing and analysis on the voltage signal output by the transimpedance amplifier (5).
10. The duplexing apparatus and system for optical communication according to claim 1, wherein: the laser (2) can be any one of a gas laser, a solid laser and a semiconductor laser, one end of the laser (2) is connected with a mode switching control circuit, and the other end is connected with the integrated optoelectronic chip (1); the laser (2) can be an external laser, and can also be integrated in an integrated optoelectronic chip as a semiconductor laser; when the laser operates in the B mode, the mode switching control circuit (3) provides an operating voltage of the laser (2), and the function of the operating voltage is to generate light with fixed wavelength.
11. The duplexing apparatus and system for optical communication according to claim 1, wherein: the quantum well structure integrated optoelectronic chip (1) works in an optical signal amplification mode under forward bias voltage to amplify an optical signal; the optical signal is detected by operating in an A (photoelectric detection) mode under a reverse bias voltage; the mode switching control circuit (3) realizes that the integrated optoelectronic chip (1) is selectively connected with the trans-impedance amplifier (5) or the second bias voltage circuit (11) by controlling the output state of each switch unit in the first switch unit (9); when the optoelectronic device works in an A (photoelectric detection) mode, the first switch unit is connected with the transimpedance amplifiers (5), and each transimpedance amplifier (5) is connected with the integrated optoelectronic chip (1); when the integrated optoelectronic chip works in a B (optical signal amplification) mode, the mode switching control circuit (3) provides working voltage for the laser (2), the output of the first switch unit (9) is connected with the second bias voltage circuit (11), the output of the second switch unit (10) is connected with the grounding interface (8), and forward bias working voltage is provided for the integrated optoelectronic chip (1).
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