CN113411057A - Power amplification device, method and equipment - Google Patents
Power amplification device, method and equipment Download PDFInfo
- Publication number
- CN113411057A CN113411057A CN202110870476.0A CN202110870476A CN113411057A CN 113411057 A CN113411057 A CN 113411057A CN 202110870476 A CN202110870476 A CN 202110870476A CN 113411057 A CN113411057 A CN 113411057A
- Authority
- CN
- China
- Prior art keywords
- power
- signal
- module
- attenuation
- parameter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/12—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of attenuating means
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/52—Circuit arrangements for protecting such amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
Abstract
The application discloses a power amplification device, a method and equipment, wherein the device comprises a power amplification module, an attenuation module, a power detection module and a load; obtaining a first transmission signal through the power amplification module; generating, by the load, a first reflected signal based on the first transmit signal; detecting, by the power detection module, a parameter of the first reflected signal; attenuating, by the attenuation module, the first reflected signal based on the parameter to obtain a second reflected signal; performing power superposition on the second reflection signal and the first transmission signal through the power amplification module to obtain the total power of the power amplification module; in this way, the possibility of burning out the power amplifier under the condition of mismatch can be reduced, and the more serious the mismatch is, the more obvious the reduction effect is.
Description
Technical Field
The present application relates to the field of signal processing technology, and relates to, but is not limited to, power amplification apparatus, methods, and devices.
Background
With the development of communication equipment, the screen occupation ratio of the mobile phone is continuously increased, and the antenna performance of the mobile phone is continuously reduced; in this case, the power amplifier of the mobile phone is required to output a radio frequency signal with higher power to ensure the communication quality. However, when the power amplifier outputs a radio frequency signal with a large power, the impedance of the power amplifier is greatly affected by the environment, and if the impedance of the power amplifier exceeds the designed value during the normal operation of the power amplifier, the impedance mismatch of the power amplifier may be caused (which may also be referred to as the mismatch of the power amplifier, or simply as the mismatch).
Example 1, different parts of a mobile phone held by a hand may affect the impedance of an antenna, and the antenna is connected to the output end of a power amplifier as a load of the power amplifier, that is, different parts of the mobile phone held by the hand may further affect the impedance of the power amplifier; therefore, when a hand holds the mobile phone at some special parts, mismatch can be caused; example 2, since the power amplifier is connected to the antenna through the rf line, if the rf line between the power amplifier and the antenna is in poor contact, impedance mismatch of the power amplifier may also be caused.
Under the condition of impedance mismatch of the power amplifier, the antenna can generate a reflected radio frequency signal and reflect the reflected radio frequency signal to the power amplifier, and the power amplifier can superpose the reflected radio frequency signal and an amplified signal of the power amplifier in power, so that the total power and voltage of the power amplifier are larger, and the power amplifier can be burnt when the total power and voltage of the power amplifier are overlarge; and the more serious the mismatch, the larger the power of the reflected radio frequency signal, the larger the total power and voltage of the power amplifier, and the higher the possibility of burning out the power amplifier.
Therefore, the mismatch increases the likelihood of a power amplifier burn-out, and the more severe the mismatch, the greater the likelihood of a power amplifier burn-out.
Disclosure of Invention
The application provides a power amplification device, a method and equipment, which can reduce the possibility of burning out a power amplifier under the condition of mismatch, and the more serious the mismatch is, the more obvious the reduction effect is.
The technical scheme of the application is realized as follows:
the application provides a power amplification device, which comprises a power amplification module, an attenuation module, a power detection module and a load;
the power amplification module is used for obtaining a first transmission signal and sending the first transmission signal to the load;
the load is used for generating a first reflection signal based on the first transmission signal and sending the first reflection signal to the power detection module;
the power detection module is used for detecting parameters of the first reflection signal; and sending the first reflected signal and the parameter to the attenuation module;
the attenuation module is used for attenuating the first reflection signal based on the parameter to obtain a second reflection signal and sending the second reflection signal to the power amplification module;
the power amplification module is further configured to perform power superposition on the second reflection signal and the first transmission signal to obtain a total power of the power amplification module.
The application provides a power amplification method, which comprises the following steps:
obtaining a first transmission signal through a power amplification module;
generating a first reflected signal based on the first transmit signal with a load;
detecting, by a power detection module, a parameter of the first reflected signal;
attenuating the first reflected signal by an attenuation module based on the parameter to obtain a second reflected signal;
and performing power superposition on the second reflection signal and the first transmission signal through the power amplification module to obtain the power of the power amplification module.
The application also provides an electronic device comprising any one of the power amplification devices provided by the embodiments of the application.
The power amplification device, the method and the equipment comprise a power amplification module, an attenuation module, a power detection module and a load; the power amplification module is used for obtaining a first transmission signal and sending the first transmission signal to the load; the load is used for generating a first reflection signal based on the first transmission signal and sending the first reflection signal to the power detection module; the power detection module is used for detecting parameters of the first reflection signal; and sending the first reflected signal and the parameter to the attenuation module; the attenuation module is used for attenuating the first reflection signal based on the parameter to obtain a second reflection signal and sending the second reflection signal to the power amplification module; the power amplification module is further configured to perform power superposition on the second reflection signal and the first transmission signal to obtain a total power of the power amplification module. In the scheme of the application, under the condition of mismatch, the power detection module may detect a parameter of the first reflection signal, and the attenuation module may attenuate the first reflection signal based on the parameter of the first reflection signal, thereby reducing the total power of the power amplification module; the possibility of burning out the power amplifier under the condition of mismatch is further reduced, and the more serious the mismatch is, the more obvious the reduction effect is.
Drawings
Fig. 1 is a schematic diagram of an alternative structure of a power amplifying device according to an embodiment of the present disclosure;
fig. 2A is a schematic structural diagram of an alternative power amplifying device according to an embodiment of the present disclosure;
fig. 2B is an alternative schematic structural diagram of a power amplifying device according to an embodiment of the present disclosure;
fig. 3 is a schematic structural diagram of an alternative power amplification module according to an embodiment of the present disclosure;
fig. 4 is an alternative structural schematic diagram of a power detection module according to an embodiment of the present disclosure;
fig. 5 is a schematic structural diagram of an alternative directional coupler provided in the embodiment of the present application;
FIG. 6 is a schematic diagram of an alternative structure of a reflected power detector according to an embodiment of the present application;
FIG. 7 is a schematic view of an alternative structure of an attenuation module according to an embodiment of the present application;
FIG. 8 is a schematic diagram of an alternative configuration of an attenuation controller provided in an embodiment of the present application;
FIG. 9 is a schematic diagram of an alternative structure of an attenuation circuit provided in the embodiments of the present application;
fig. 10 is a schematic structural diagram of an alternative power amplifying device provided in an embodiment of the present application;
fig. 11 is a schematic structural diagram of an alternative power amplifying device according to an embodiment of the present disclosure;
fig. 12 is a schematic structural diagram of an alternative power amplifying device provided in the embodiment of the present application;
fig. 13 is an alternative structural diagram of a partial module in a power amplifying device according to an embodiment of the present disclosure;
fig. 14 is an alternative flowchart of a power amplification method according to an embodiment of the present disclosure.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the following will describe the specific technical solutions of the present application in further detail with reference to the accompanying drawings in the embodiments of the present application. The following examples are intended to illustrate the present application but are not intended to limit the scope of the present application.
In the following description, reference is made to "some embodiments" which describe a subset of all possible embodiments, but it is understood that "some embodiments" may be the same subset or different subsets of all possible embodiments, and may be combined with each other without conflict.
In the following description, the terms "first \ second \ third" are used merely as examples to distinguish different objects, and do not represent a specific ordering for the objects, and do not have a definition of a sequential order. It is to be understood that the terms first, second, and third, if any, may be used interchangeably with the specified order or sequence to enable the embodiments of the application described herein to be practiced in other sequences than those illustrated or described herein.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing embodiments of the present application only and is not intended to be limiting of the application.
It is noted that below enhancing a signal may be understood as amplifying a parameter (e.g. power or voltage) of the signal and attenuating a signal may be understood as decreasing a parameter of the signal.
Embodiments of a power amplification device, a method, an apparatus, and a storage medium according to embodiments of the present application are described below.
The embodiment of the application can provide a power amplification method, a device, a method and equipment; in practical applications, the power amplifying method may be implemented by a power amplifying device, and each functional entity in the power amplifying device may be implemented by an electronic device (e.g., a mobile phone).
In a first aspect, the present embodiment provides a power amplification apparatus, and referring to the content shown in fig. 1, the power amplification apparatus 10 may include a power amplification module 101, an attenuation module 102, a power detection module 103, and a load 104;
the power amplification module 101 is configured to obtain a first transmission signal and send the first transmission signal to the load 104;
a load 104, configured to generate a first reflected signal based on the first transmit signal, and send the first reflected signal to the power detection module 103;
a power detection module 103, configured to detect a parameter of the first reflected signal; and sends the first reflected signal and the parameter to the attenuation module 102;
the attenuation module 102 is configured to attenuate the first reflection signal based on the parameter to obtain a second reflection signal, and send the second reflection signal to the power amplification module 101;
the power amplification module 101 is further configured to perform power superposition on the second reflection signal and the first transmission signal to obtain a total power of the power amplification module 101.
In the embodiment of the present application, the connection and signal transmission relationship among the power amplification module 101, the attenuation module 102, the power detection module 103, and the load 104 is not limited uniquely, and the functions of each module may be implemented.
In an example, the connection and signal transfer relationship between modules included in the power amplification apparatus may be as shown in fig. 2A, and the power amplification module 101 may transmit a signal to the load 104; the load 104 may send a signal to the power detection module 103; the power detection module 103 may send a signal to the attenuation module 102; the attenuation module 102 may send a signal to the power amplification module 101.
In an example, the connection and signal transfer relationship between the modules included in the power amplification apparatus may be as shown in fig. 2B, and the power amplification module 101 may send a signal to the attenuation module 102; the attenuation module 102 may send a signal to the power detection module 103; the power detection module 103 may send a signal to the load 104; the load 104 may send a signal to the power detection module 103; the power detection module 103 may send a signal to the attenuation module 102; the attenuation module 102 may send a signal to the power amplification module 101.
The first transmission signal is any one transmission signal output by the power amplification module.
Referring to fig. 1, the power amplification module 101 receives a transmission signal through an input port, boosts the transmission signal to obtain a first transmission signal, and sends the first transmission signal to the load 104.
In an example, the power amplification module 101 may further receive a transmission signal through the input port, enhance the transmission signal to obtain a first transmission signal, and forward the first transmission signal to the load 104 through the attenuation module 102 and the power detection module 103.
In another example, the power amplification module 101 may further receive a transmission signal through the input port, enhance the transmission signal to obtain a first transmission signal, and send the first transmission signal directly to the load 104.
The power amplification module 101 at least includes a power amplifier, and it can be understood that the power amplification module may further include other auxiliary devices, and the specific structure of the power amplification module 101 is not limited uniquely in the embodiments of the present application, and may be configured according to actual requirements.
The load is used for receiving and processing a transmission signal (for example, a first transmission signal) sent by the power amplification module, and the load is not specifically limited in the embodiment of the present application and may be configured according to actual requirements. Illustratively, the load may be an antenna.
Referring to fig. 1, if the load 104 generates a first reflected signal based on the received first transmission signal and is greater than a first threshold, it is determined that the load is in a mismatch state; if the parameter of the first reflection signal generated by the load is smaller than a first threshold value, determining that the first reflection signal is in a non-mismatch state; the first reflected signal is then sent to the power detection module 103 through a transmission line between the load 104 and the power detection module 103.
The first reflected signal is positively correlated with the first transmitted signal; i.e. the larger the first transmitted signal, the larger the first reflected signal; the smaller the first transmitted signal, the smaller the first reflected signal.
Referring to fig. 1, the power detection module 103 detects a parameter of the first reflected signal; and sends the first reflected signal and the parameters of the first reflected signal to the attenuation module 102 through a transmission line between the power detection module 103 and the attenuation module 102.
The parameter of the first reflected signal may include a voltage of the first reflected signal, or may also include a power of the first reflected signal; or may also include other parameters; the parameters of the first reflection signal are not limited uniquely, and can be configured according to actual requirements.
Referring to the content shown in fig. 1, the attenuation module 102 attenuates the first reflected signal based on the parameter of the first reflected signal to obtain a second reflected signal, and sends the second reflected signal to the power amplification module 101 through a transmission line between the attenuation module 102 and the power amplification module 101.
The embodiment of the application does not uniquely limit the specific implementation of the attenuation module for attenuating the first reflection signal, and can be configured according to actual requirements.
In one example, the attenuation module may attenuate a parameter of the first reflected signal by a preset amount; wherein the parameter may comprise power or voltage.
In another example, the attenuation module may also attenuate the parameter of the first reflected signal by a preset multiple, for example, the power of the first reflected signal may be reduced by 0.5 times.
In yet another example, the attenuation module may also attenuate the parameter of the first reflected signal by a predetermined amount and a predetermined multiple simultaneously.
Referring to the content shown in fig. 1, the power amplification module 101 superimposes the power amplitude and the phase of the second reflected signal and the power amplitude and the phase of the first transmitted signal to obtain the total power of the power amplification module 101.
In the power amplifying device provided in the embodiment of the present application, a power amplifying module in the power amplifying device obtains a first transmission signal, the load in the power amplifying device generates a first reflection signal based on the first transmission signal, and a power detection module in the power amplifying device detects a parameter of the first reflection signal; attenuating the first reflected signal based on the parameter by the attenuation module in the power amplification device to obtain a second reflected signal; and performing power superposition on the second reflection signal and the first transmission signal through the power amplification module in the power amplification device to obtain the total power of the power amplification module. In this way, under the condition of mismatch, the power detection module may detect the parameter of the first reflected signal, and the attenuation module may attenuate the first reflected signal based on the parameter of the first reflected signal, thereby reducing the total power of the power amplification module; the possibility of burning out the power amplifier under the condition of mismatch is further reduced, and the more serious the mismatch is, the more obvious the reduction effect is.
The power amplification device provided by the embodiment of the application not only can attenuate the first reflection signal, but also can attenuate the first transmission signal.
Referring to the content shown in fig. 1, the attenuation module 102 in the power amplification apparatus provided in the embodiment of the present application is further configured to attenuate the first transmission signal based on the parameter to obtain a second transmission signal 112, and send the second transmission signal 112 to the load 104;
correspondingly, the load 104 generates a third reflected signal based on the second transmission signal 112, and sends the third reflected signal to the power detection module 103;
correspondingly, the power detection module 103 is configured to detect a parameter of the third reflected signal; and sends the third reflected signal and the parameter of the third reflected signal to the attenuation module 102;
correspondingly, the attenuation module 102 is configured to attenuate the third reflection signal based on the parameter of the third reflection signal to obtain a fifth reflection signal, and send the fifth reflection signal to the power amplification module 101;
correspondingly, the power amplification module 101 is further configured to perform power superposition on the fifth reflection signal and the second transmission signal 112, so as to obtain a total power of the power amplification module 101.
Specific implementations of the attenuation module 102, the load 104, the power detection module 103, and the power amplification module 101 may refer to specific descriptions about each module in fig. 1, and are not described in detail here.
Thus, with the power amplifying device provided by this embodiment, on one hand, the transmission signal can be attenuated by the attenuation module, so that the reflection signal generated by the load is attenuated; on the other hand, the generated reflected signal is attenuated again through the attenuation module; thus, the total power of the power amplifier is reduced through two attenuation processes; namely, the effect is better in solving the problem of reducing the possibility of burning out the power amplifier under the condition of mismatch.
In the following explanation of the structure of the power amplification module 101, referring to the content shown in fig. 3, the power amplification module 101 may include: an input matching circuit 1011, a power amplifier 1012, and an output matching circuit 1013.
An input matching circuit 1011 for matching an input impedance of the power amplifier 1012 to a reference impedance (e.g., the reference impedance may be 50 ohms); that is, the input impedance of the power amplifier 1012 presents a reference impedance to the outside, which facilitates the direct connection of the devices with the input terminal of the power amplification module 101.
The power amplifier 1012 is used to boost the signal at its input to obtain the first reflected signal in the embodiment of the present application.
An output matching circuit 1013 for matching an output impedance of the power amplifier 1012 to a reference impedance; that is, the output impedance of the power amplifier 1012 presents a reference impedance to the outside, which facilitates direct connection of the devices to the output terminal of the power amplification module 101.
Optionally, referring to the content shown in fig. 3, the power amplification module 101 may further include: a bias circuit 1014.
A bias circuit 1014 for providing a bias current to the power amplifier 1012.
The structure of the power detection module is explained below.
Referring to fig. 4, the power detection module 103 includes: a directional coupler 1031 and a reflected power detector 1032;
a directional coupler 1031, configured to obtain a fourth reflected signal based on the coupling of the first reflected signal, and send the fourth reflected signal to the reflected power detector 1032;
a reflected power detector 1032 for determining a parameter of the first reflected signal based on the fourth reflected signal and sending the parameter of the first reflected signal to the attenuation module 102.
The operation of the directional coupler is explained below.
Referring to fig. 5, the directional coupler 1031 includes an input terminal 10311, a through terminal 10312, and an isolation terminal 10313.
The input terminal 10311 is connected to the attenuation module 102, the through terminal 10312 is connected to the load, and the isolation terminal 10313 is connected to the reflected power detection module 1032.
The input terminal 10311 of the directional coupler 1031 may receive the first transmission signal sent by the attenuation module, and then output the first transmission signal to the load 104 from the through terminal 10312; the through terminal 10312 of the directional coupler may receive the first reflected signal, obtain a fourth reflected signal after coupling, and output the fourth reflected signal to the reflected power detector 1032 through the isolation terminal 10313.
The embodiment of the application does not uniquely limit the specific structure of the reflected power detection module, and can be configured according to actual requirements.
In one example, referring to what is shown in FIG. 6, reflected power detector 1032 includes: detector 10321, filter 10322, and detector 10323;
a detector 10321 for converting the fourth reflected signal into a direct current component and a high frequency component, and sending the direct current component and the high frequency component to a filter 10322;
a filter 10322 for filtering the direct current component and the high frequency component of the high frequency component and outputting the direct current component to a detector 10323;
a detector 10323, configured to detect the direct current component to obtain a parameter of the first reflection signal.
The embodiment of the present application does not limit the specific structures of the detector, the filter, and the detector, and for example, the detector may include a Field Effect Transistor (FET); illustratively, the filter may be a Resistance and Capacitance (RC) filter.
When the parameter of the first reflected signal includes a voltage, in an example, the detector detects the voltage of the dc component, and uses the detection result as the parameter of the first reflected signal.
When the parameter of the first reflected signal includes power, in an example, the detector detects a voltage of the dc component, since a relationship (a first relationship) between a power of an input signal of the reflected power detector and an output voltage is known, and a power conversion relationship (a second relationship) between a pass end and an isolation end of the directional coupler is also known, the detector may convert the voltage according to the first relationship to obtain a power of a fourth reflected signal, convert the power of the fourth reflected signal according to the second relationship to obtain a power of the first reflected signal, and use the power of the first reflected signal as the parameter of the first reflected signal.
The structure of the attenuation module is explained below.
Referring to what is shown in fig. 7, the attenuation module 102 may include: an attenuation controller 1021 and an attenuation circuit 1022;
an attenuation controller 1021 for controlling the first path of the attenuation circuit 1022 to conduct according to the parameter of the first reflected signal;
the attenuation circuit 1022 is configured to attenuate the first reflected signal based on the first path to obtain a second reflected signal.
The structure of the attenuation controller is not limited uniquely, and the attenuation controller can be configured according to actual requirements.
Referring to fig. 8, the attenuation controller 1021 may include: a comparator 10211 and a logic control circuit 10212;
a comparator 10211 for determining a current mismatch level according to the parameter;
and the logic control circuit 10212 is configured to determine a first path according to the current mismatch level and control the first path to conduct.
Specifically, the comparator 10211 compares the parameter of the first reflection signal with at least one reference parameter to form a plurality of reference ranges by at least one reference, and determines the reference range to which the parameter of the first reflection signal belongs, thereby obtaining the current mismatch level.
The larger the parameter of the first reflected signal, the more severe the mismatch and the higher the level of mismatch.
Exemplarily, the at least one reference parameter includes a and B, where a is greater than B, the comparator compares the parameter of the first reflection signal with a and B, respectively, and if the parameter of the first reflection signal is less than or equal to B, it is determined that the current mismatch level is the first mismatch level; if the parameter of the first reflection signal is larger than B and smaller than A, determining that the current mismatch level is a second mismatch level; and if the parameter of the first reflection signal is greater than or equal to A, determining the current mismatch level as a third mismatch level.
The form and the number of the reference parameters are not particularly limited, and the reference parameters can be configured according to actual requirements.
In an example, the reference parameter may be a reference voltage generated from a reference circuit, or a reference power.
In another example, the reference parameter may be a reference voltage, or a reference power, which is preset according to software.
The number of comparators is the same as the number of reference parameters.
Since the attenuation circuit comprises at least two paths, different paths correspond to different mismatch levels.
The logic control circuit 10212 determines a pass corresponding to the current mismatch level as a first pass according to the current mismatch level, and controls the first pass to be conducted; at which time the other paths are open.
In the embodiment of the present application, referring to the content shown in fig. 8, the attenuation controller further includes a reference circuit 10213.
A reference circuit 10213 for generating the at least one reference parameter.
The specific structure of the reference circuit is not limited uniquely in the embodiments of the present application, and the reference circuit can be configured according to actual requirements. Illustratively, the reference circuit may be composed of devices such as a power supply and a resistor.
The structure of the attenuation circuit is explained below.
Referring to the illustration of fig. 9, the attenuation circuit 1022 includes at least two paths.
The specific structure of the path is not limited uniquely in the embodiments of the present application, and for example, the path may be composed of devices such as a resistor; wherein the magnitude of the resistance of each path is related to the mismatch level.
Wherein different ones of the paths correspond to different ones of the mismatch levels and different ones of the paths correspond to different attenuation levels. That is, at different mismatch levels, the path corresponding to the mismatch level is turned on, and the first reflected signal is attenuated by the turned-on path according to the attenuation degree corresponding to the path, so that the second reflected signal is obtained.
The following describes a power amplification apparatus provided in an embodiment of the present application with specific scenarios.
In the related art, for the problem of power amplifier burnout caused by mismatch, a small current-limiting resistor is generally connected in series with a current bias path of the power amplifier, and a part of voltage can be shared by the current-limiting resistor during mismatch; in this way, the problem of burn-out of the power amplifier caused by mismatch can be alleviated to a certain extent, but even if the current-limiting resistor exists, the possibility of burn-out of the power amplifier under the mismatch condition is still high.
The application proposes that a numerical control attenuator (equivalent to the attenuation circuit), an attenuation control circuit (equivalent to the attenuation controller), a directional coupler and a reflected power detector are added behind an output matching circuit of a power amplifier; therefore, when mismatch occurs, the reflected radio frequency signal can be extracted through the directional coupler and sent to the reflected power detector for detection, the reflected power is obtained, and then attenuation control is carried out on the basis of the attenuation control circuit and the numerical control attenuator according to the reflected power. When the reflected power is larger than the set threshold value, the power of the radio-frequency signal can be reduced through the numerical control attenuator, so that the total power of the power amplifier is reduced, the mismatch of the power amplifier is further slowed down, and the function of protecting the power amplifier is achieved. Meanwhile, under the condition that the output of the power amplifier has no mismatch or has small mismatch, the attenuation of the numerical control attenuator is set to be 0, and the performance of the power amplifier is not influenced, so that the mismatch protection of the power amplifier and the working performance of a mismatch-free normal state are considered.
Referring to the contents shown in fig. 10, the power amplifying device 100 may include: input matching circuit 1001, power amplifier 1002, bias circuit 1003, output matching circuit 1004, digitally controlled attenuator 1005, attenuation control circuit 1006, directional coupler 1007, reflected power detector 1008, and load 1009.
The input matching circuit 1001 is connected with the power amplifier 1002, the bias circuit 1003 is connected with the power amplifier 1002, the power amplifier 1002 is connected with the output matching circuit 1004, the output matching circuit 1004 is connected with the numerical control attenuator 1005, the numerical control attenuator 1005 is respectively connected with the attenuation control circuit 1006 and the directional coupler 1007, and the directional coupler 1007 is respectively connected with the reflected power detector 1008 and the load 1009; attenuation control circuit 1006 is connected to reflected power detector 1008.
The operation of the power amplifying device will be explained.
Illustratively, referring to the content shown in fig. 11, a transmission signal a (referred to as transmission a in fig. 11 for short) is input to a power amplifier 1002 through an input matching circuit 1001, the power amplifier 1002 amplifies the transmission signal a to obtain a transmission signal B (referred to as transmission B in fig. 11 for short), and the transmission signal B is transmitted to a load 1009 through an output matching circuit 1004, a digitally controlled attenuator 1005 and a directional coupler 1007; when mismatch occurs, the load 1009 generates a reflection signal a (abbreviated as "anti-a" in fig. 11) based on the transmission signal B, the directional coupler 1007 obtains the reflection signal B (abbreviated as "anti-B" in fig. 11) through coupling, the reflection power detector 1008 detects the voltage of the reflection signal B, calculates the power of the reflection signal B, obtains the power of the reflection signal a according to the coupling coefficient, and sends the power of the reflection signal a to the attenuation control circuit 1006, the attenuation control circuit 1006 determines the current mismatch level based on the power of the reflection signal a, and conducts a corresponding path in the numerical control attenuator 1005 according to the current mismatch level, then the directional coupler 1007 sends the reflection signal a to the numerical control attenuator 1005, the numerical control attenuator 1005 attenuates the reflection signal a according to the conducted path to obtain a reflection signal C (abbreviated as "anti-C" in fig. 11), the reflected signal C is sent to the power amplifier 1002 through the output matching circuit 1004, and the power amplifier 1002 superposes the power of the reflected signal C and the transmitted signal B to obtain the total power of the power amplifier 1002.
Illustratively, referring to the content shown in fig. 12, a transmission signal a (abbreviated as transmission a in fig. 12) is input to a power amplifier 1002 through an input matching circuit 1001, the power amplifier 1002 amplifies the transmission signal a to obtain a transmission signal B (abbreviated as transmission B in fig. 12), the transmission signal B sends the transmission signal B to a numerical control attenuator 1005 through an output matching circuit 1004, the numerical control attenuator 1005 attenuates the transmission signal B to obtain a transmission signal B (abbreviated as transmission B in fig. 12), and the numerical control attenuator 1005 transmits the transmission signal B to a load 1009 through a directional coupler 1007.
When mismatch occurs, the load 1009 generates a reflection signal a (abbreviated as "anti-a" in fig. 12) based on the transmission signal b, the directional coupler 1007 obtains a reflection signal b (abbreviated as "anti-b" in fig. 12) through coupling, the reflection power detector 1008 detects the voltage of the reflection signal b, calculates the power of the reflection signal b, obtains the power of the reflection signal a according to the coupling coefficient, and sends the power of the reflection signal a to the attenuation control circuit 1006, the attenuation control circuit 1006 determines the current mismatch level based on the power of the reflection signal a, and conducts a corresponding path in the numerical control attenuator 1005 according to the current mismatch level, then the directional coupler 1007 sends the reflection signal a to the numerical control attenuator 1005, the numerical control attenuator 1005 attenuates the reflection signal a according to the conducted path to obtain a reflection signal c (abbreviated as "anti-c" in fig. 12), the reflected signal c is sent to the power amplifier 1002 through the output matching circuit 1004, and the power amplifier 1002 superposes the power of the reflected signal c and the transmitted signal b to obtain the total power of the power amplifier 1002.
Note that when there is no mismatch, the load 1009 does not generate the reflected signal a or the reflected signal a, i.e., there is no transmission process of the reflection loop.
In one example, the internal structure among the digitally controlled attenuator 1005, the attenuation control circuit 1006, the directional coupler 1007, and the reflected power detector 1008 is shown in fig. 13:
the directional coupler 1007 is configured to receive the first reflected signal and couple the first reflected signal to obtain a fourth reflected signal.
The reflected power detector 1008 includes a detector 10081 and a filter 10082; the detector 10081 is configured to receive the fourth reflection signal and convert the fourth reflection signal into a dc component and a high frequency component, and the filter 10082 is configured to filter the dc component and the high frequency component of the high frequency component to obtain a dc component, and detect a parameter of the first reflection signal.
The attenuation control circuit 1006 includes a logic control circuit 10061, two comparators 10062, and a reference circuit 10063; the reference circuit 10063 includes a plurality of resistors and two output terminals, and the reference circuit 10063 is configured to generate two reference parameters according to the plurality of resistors and transmit the two reference parameters to the comparator 10062 through the two output terminals; the comparator 10062 is configured to compare the parameter of the first reflection signal with two reference parameters, so as to obtain a mismatch level; the logic control circuit 10061 is configured to control the corresponding path in the digitally controlled attenuator 1005 to conduct according to the mismatch level.
The digitally controlled attenuator 1005 includes 3 paths 10051, each path including a switch and a resistor; each path 10051 has a different resistance and is associated with a mismatch level, and the switching on and off of the path is accomplished by controlling the switches in the path.
The power amplification device provided by the embodiment of the application has the following technical effects:
the directional coupler provided by the embodiment of the application can be realized in a chip, has high directivity and small area, is convenient to integrate, and is very easy to realize reflected power detection. According to the embodiment of the application, the power detector is built through the transistor, and the power detector and a Complementary Metal Oxide Semiconductor (CMOS) circuit process realized by the logic control circuit are very easy to integrate, and the power detector and the CMOS circuit process can be well integrated with the existing power amplifier process, and are realized on the existing basis, so that the power detector does not occupy too much chip area, realizes low cost and has competitive advantages.
Secondly, the scheme of the related technology is only to add some resistance current limiting in the bias circuit, and the anti-burning capability of the power amplifier is not improved too much in practice.
In a second aspect, the present embodiment provides a power amplifying method, which is applied to a power amplifying device, where the power amplifying device is disposed on an electronic device.
The electronic device may be any device having associated information processing capabilities, and in one embodiment, the electronic device may be a chip or system of chips or a cellular phone.
The following describes a power amplification method provided in an embodiment of the present application.
Fig. 14 is a schematic flowchart of a power amplification method according to an embodiment of the present application, where the power amplification method is applied to a power amplification apparatus.
The power amplification method may include, but is not limited to, S1401 to S1405 described below as shown in fig. 14.
And S1401, obtaining a first transmission signal through a power amplification module.
The power amplification apparatus implements the process of obtaining the first transmission signal through the power amplification module, and reference may be specifically made to the description about the power amplification module, which is not described herein again.
S1402, generating a first reflected signal based on the first transmitted signal by using a load.
The power amplifying device implements a process of generating the first reflection signal based on the first transmission signal through a load, which may specifically refer to the description of the load and is not described herein again.
And S1403, detecting the parameters of the first reflection signal through a power detection module.
The power amplifying device implements a process of detecting the parameter of the first reflection signal through the power detection module, which may specifically refer to the description of the power detection module, and is not described herein again.
And S1404, attenuating the first reflection signal by utilizing an attenuation module based on the parameter to obtain a second reflection signal.
The power amplifying device implements the process of attenuating the first reflection signal based on the parameter through the attenuation module to obtain the second reflection signal, which may specifically refer to the description of the attenuation module and is not described herein again.
And S1405, performing power superposition on the second reflection signal and the first transmission signal through the power amplification module to obtain the power of the power amplification module.
The power amplification device implements a process of performing power superposition on the second reflection signal and the first transmission signal through a power amplification module to obtain the power of the power amplification module, which may specifically refer to the description of the power amplification module, and is not described herein again.
In S1404, the attenuation module is used to attenuate the first reflected signal based on the parameter to obtain a second reflected signal, which may include, but is not limited to, the following S14041 and S14042.
S14041, determining a current mismatch level based on the parameter by using the attenuation module.
In S14041, for a specific implementation process of determining the current mismatch level by using the attenuation module based on the parameter of the first reflection signal, reference may be made to the above description of the attenuation module, and details are not repeated here.
S14042, attenuating the first reflection signal by using an attenuation module according to the current mismatch level to obtain the second reflection signal.
In S14042, the specific implementation process of obtaining the second reflection signal by attenuating the first reflection signal by using the attenuation module according to the mismatch level with the current level may refer to the related description of the attenuation module, and is not described herein again.
The power amplification method provided by the embodiment of the application comprises the following steps: obtaining a first transmission signal; generating a first reflected signal based on the first transmit signal; detecting a parameter of the first reflected signal; attenuating the first reflected signal based on the parameter to obtain a second reflected signal; and performing power superposition on the second reflection signal and the first transmission signal to obtain the power of the power amplification module. The method can reduce the possibility of burning out the power amplifier under the condition of mismatch, and the more serious the mismatch is, the more obvious the reduction effect is.
Of course, the embodiments of the present application are not limited to the provided apparatuses and methods, and may be implemented in various ways, for example, as electronic devices. The electronic device may comprise any one of the power amplifying devices of the above embodiments.
It should be noted that, the description of the electronic device is similar to the description of the power amplifying device, and has the same beneficial effect description as the power amplifying device, and the description is not repeated. In addition, for technical details not disclosed in the embodiments of the apparatus in the present application, please refer to the description of the embodiments of the power amplifying device.
In the several embodiments provided in the present application, it should be understood that the disclosed apparatus and method may be implemented in other ways. The above-described device embodiments are merely illustrative, for example, the division of the unit is only a logical functional division, and there may be other division ways in actual implementation, such as: multiple units or components may be combined, or may be integrated into another system, or some features may be omitted, or not implemented. In addition, the coupling, direct coupling or communication connection between the components shown or discussed may be through some interfaces, and the indirect coupling or communication connection between the devices or units may be electrical, mechanical or other forms.
The units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, that is, may be located in one place, or may be distributed on a plurality of network units; some or all of the units can be selected according to actual needs to achieve the purpose of the solution of the embodiment.
In addition, all the functional units in the embodiments of the present invention may be integrated into one processing module, or each unit may be separately used as one unit, or two or more units may be integrated into one unit; the integrated unit can be realized in a form of hardware, or in a form of hardware plus a software functional unit. Those of ordinary skill in the art will understand that: all or part of the steps for implementing the method embodiments may be implemented by hardware related to program instructions, and the program may be stored in a computer readable storage medium, and when executed, the program performs the steps including the method embodiments; and the aforementioned storage medium includes: a mobile storage device, a Read-Only Memory (ROM), a Random Access Memory (RAM), a magnetic disk or an optical disk, and other various media capable of storing program codes.
The methods disclosed in the several method embodiments provided in the present application may be combined arbitrarily without conflict to obtain new method embodiments.
Features disclosed in several of the product embodiments provided in the present application may be combined in any combination to yield new product embodiments without conflict.
The features disclosed in the several method or apparatus embodiments provided in the present application may be combined arbitrarily, without conflict, to arrive at new method embodiments or apparatus embodiments.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (12)
1. A power amplification device is characterized by comprising a power amplification module, an attenuation module, a power detection module and a load;
the power amplification module is used for obtaining a first transmission signal and sending the first transmission signal to the load;
the load is used for generating a first reflection signal based on the first transmission signal and sending the first reflection signal to the power detection module;
the power detection module is used for detecting parameters of the first reflection signal; and sending the first reflected signal and the parameter to the attenuation module;
the attenuation module is used for attenuating the first reflection signal based on the parameter to obtain a second reflection signal and sending the second reflection signal to the power amplification module;
the power amplification module is further configured to perform power superposition on the second reflection signal and the first transmission signal to obtain a total power of the power amplification module.
2. The apparatus of claim 1,
the attenuation module is further configured to attenuate the first transmission signal based on the parameter to obtain a second transmission signal, and send the second transmission signal to the load;
the load generates a third reflected signal based on the second transmitted signal.
3. The apparatus of claim 1, wherein the power detection module comprises: a directional coupler and a reflected power detector;
the directional coupler is used for obtaining a fourth reflected signal based on the coupling of the first reflected signal and sending the fourth reflected signal to the reflected power detector;
the reflected power detector is configured to determine the parameter based on the fourth reflected signal and send the parameter to the attenuation module.
4. The apparatus of claim 3, wherein the reflected power detector comprises: a detector, a filter and a detector;
the detector is used for converting the fourth reflection signal into a direct current component and a high-frequency component and sending the direct current component and the high-frequency component to the filter;
the filter is configured to filter the dc component and the high-frequency component of the high-frequency component, and output the dc component to the detector;
the detector is used for detecting the direct current component to obtain the parameter.
5. The apparatus of claim 1, wherein the attenuation module comprises: an attenuation controller and an attenuation circuit;
the attenuation controller is used for controlling the conduction of a first path in the attenuation circuit according to the parameter;
the attenuation circuit is configured to attenuate the first reflected signal based on the first path to obtain the second reflected signal.
6. The apparatus of claim 5, wherein the attenuation controller comprises: a comparator and a logic control circuit;
the comparator is used for determining the current mismatch level according to the parameter;
and the logic control circuit is used for determining a first path according to the current mismatch level and controlling the first path to be conducted.
7. The apparatus of claim 6, wherein the attenuation controller further comprises a reference circuit;
the reference circuit is used for generating at least one reference parameter;
the comparator is further configured to compare the parameter with the at least one reference parameter to obtain the current mismatch level.
8. The apparatus of claim 5, wherein the attenuation circuit comprises at least two paths; wherein different paths correspond to different mismatch levels and different paths correspond to different attenuation levels.
9. A method of power amplification, the method comprising:
obtaining a first transmission signal through a power amplification module;
generating a first reflected signal based on the first transmit signal with a load;
detecting, by a power detection module, a parameter of the first reflected signal;
attenuating the first reflected signal by an attenuation module based on the parameter to obtain a second reflected signal;
and performing power superposition on the second reflection signal and the first transmission signal through the power amplification module to obtain the power of the power amplification module.
10. The method of claim 9, wherein attenuating the first reflected signal with an attenuation module based on the parameter to obtain a second reflected signal comprises:
determining, with an attenuation module, a current mismatch level based on the parameter;
and attenuating the first reflection signal by an attenuation module according to the mismatch level with the current to obtain the second reflection signal.
11. The method of claim 10, wherein the mismatch levels comprise at least two mismatch levels, and wherein different mismatch levels correspond to different degrees of attenuation.
12. An electronic device, characterized in that the electronic device comprises the power amplification apparatus of any one of claims 1 to 8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110870476.0A CN113411057B (en) | 2021-07-30 | 2021-07-30 | Power amplification device, method and equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110870476.0A CN113411057B (en) | 2021-07-30 | 2021-07-30 | Power amplification device, method and equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113411057A true CN113411057A (en) | 2021-09-17 |
| CN113411057B CN113411057B (en) | 2022-02-25 |
Family
ID=77688145
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110870476.0A Active CN113411057B (en) | 2021-07-30 | 2021-07-30 | Power amplification device, method and equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113411057B (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040100325A1 (en) * | 2002-11-26 | 2004-05-27 | Van Amerom Johannes Herman Maurits | Method and apparatus for improved output power level control in an amplifier circuit |
| US20050159119A1 (en) * | 2004-01-21 | 2005-07-21 | Matsushita Electric Industrial Co., Ltd. | Reflected power suppression circuit |
| CN101594127A (en) * | 2009-06-19 | 2009-12-02 | 常州瑞思杰尔电子科技有限公司 | Full solid-sate radio frequency power supply |
| CN105634419A (en) * | 2015-12-25 | 2016-06-01 | 中国电子科技集团公司第五十四研究所 | C-waveband high-power solid-state power amplifier |
| CN110266278A (en) * | 2019-06-26 | 2019-09-20 | 深圳市博威射频科技有限公司 | Solid Source function discharge protection circuit and its control method |
| CN112737705A (en) * | 2020-12-29 | 2021-04-30 | 京信网络系统股份有限公司 | Automatic electronic tuning device and automatic electronic tuning method for standing-wave ratio |
| CN113067644A (en) * | 2021-03-05 | 2021-07-02 | 北京邮电大学 | Bias voltage control device and system of modulator |
-
2021
- 2021-07-30 CN CN202110870476.0A patent/CN113411057B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040100325A1 (en) * | 2002-11-26 | 2004-05-27 | Van Amerom Johannes Herman Maurits | Method and apparatus for improved output power level control in an amplifier circuit |
| US20050159119A1 (en) * | 2004-01-21 | 2005-07-21 | Matsushita Electric Industrial Co., Ltd. | Reflected power suppression circuit |
| CN101594127A (en) * | 2009-06-19 | 2009-12-02 | 常州瑞思杰尔电子科技有限公司 | Full solid-sate radio frequency power supply |
| CN105634419A (en) * | 2015-12-25 | 2016-06-01 | 中国电子科技集团公司第五十四研究所 | C-waveband high-power solid-state power amplifier |
| CN110266278A (en) * | 2019-06-26 | 2019-09-20 | 深圳市博威射频科技有限公司 | Solid Source function discharge protection circuit and its control method |
| CN112737705A (en) * | 2020-12-29 | 2021-04-30 | 京信网络系统股份有限公司 | Automatic electronic tuning device and automatic electronic tuning method for standing-wave ratio |
| CN113067644A (en) * | 2021-03-05 | 2021-07-02 | 北京邮电大学 | Bias voltage control device and system of modulator |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113411057B (en) | 2022-02-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20180124706A1 (en) | Interface device providing power management and load termination in distributed antenna system | |
| US20060009165A1 (en) | High frequency circuit | |
| CN110011721B (en) | Power amplifier equipment and power amplifier system in satellite communication system | |
| WO2007108918A2 (en) | Tdd receiver protection | |
| US20130165057A1 (en) | Rf transmission circuit and electronic device and method for saving power thereof | |
| CN106100675A (en) | A kind of radio frequency front-end device, antenna assembly and mobile terminal | |
| CN111756396A (en) | Radio frequency circuit, electronic device, and control method | |
| US8027648B2 (en) | Radio frequency power monitor | |
| US20120231737A1 (en) | Energy distribution among antennas in an antenna system | |
| CN113411057B (en) | Power amplification device, method and equipment | |
| CN107750433B (en) | Method and apparatus for signal transmission with transmit activity detection | |
| CN108683427B (en) | Antenna adjusting circuit and antenna adjusting method | |
| CN111211802A (en) | Programmable attenuator coupling device, radio frequency circuit and electronic equipment | |
| CN102255624B (en) | Wireless communication receiver and wireless communications method | |
| CN113114279B (en) | Radio frequency circuit, electronic device and signal processing method | |
| JP4460810B2 (en) | Inspection circuit apparatus and method for switchable diversity system | |
| WO2021223121A1 (en) | Bidirectional multi-frequency amplifier, transceiver, control method and storage medium | |
| US11296736B2 (en) | Time-sharing detection control circuit, wireless transceiver system and time-sharing detection and control method | |
| JP2005051364A (en) | Limiter circuit | |
| CN110350939B (en) | Method and device for protecting PA | |
| CN108270463B (en) | Radio frequency front end device | |
| CN107688131B (en) | MIMO antenna system | |
| CN217508720U (en) | Power amplifier control circuit and electronic device | |
| KR101934309B1 (en) | Apparatus for communication in apartment using impedance transformation amplifier | |
| CN104270833A (en) | Wireless communication system and subdivider thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: 510663 8th floor, building C2, Chuangxin building, No. 182, Kexue Avenue, Huangpu District, Guangzhou, Guangdong Patentee after: Guangzhou Huizhi Microelectronics Co.,Ltd. Address before: 510663 unit c3-802, innovation building, 182 science Avenue, Science City, Guangzhou high tech Industrial Development Zone, Guangdong Province Patentee before: SMARTER MICROELECTRONICS (GUANG ZHOU) Co.,Ltd. |
|
| CP03 | Change of name, title or address |