CN113410755B - External cavity narrow linewidth laser - Google Patents

External cavity narrow linewidth laser Download PDF

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Publication number
CN113410755B
CN113410755B CN202110688731.XA CN202110688731A CN113410755B CN 113410755 B CN113410755 B CN 113410755B CN 202110688731 A CN202110688731 A CN 202110688731A CN 113410755 B CN113410755 B CN 113410755B
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external cavity
chip
narrow linewidth
linewidth laser
waveguides
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CN113410755A (en
Inventor
陈少康
陈伟
徐长达
王健
齐艺超
班德超
穆春元
李明
祝宁华
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Institute of Semiconductors of CAS
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

The invention provides an external cavity narrow linewidth laser, which comprises a heat sink, a chip, an electrode, a coupling lens, a multi-mode interference waveguide structure and a reflection structure, wherein an installation area extending along the left-right direction is formed on the upper end surface of the heat sink; the chip is arranged in the mounting area; the electrode is arranged above the chip; the coupling lens is arranged in the mounting area and is positioned on the right side of the chip; the multimode interference waveguide structure comprises a plurality of single-mode waveguides and a plurality of multimode waveguides, and the plurality of single-mode waveguides and the plurality of multimode waveguides are sequentially and alternately arranged in the mounting area along an optical axis and are positioned on the right side of the coupling lens; the reflection structure is arranged in the installation area and is positioned on the right side of the multimode interference waveguide structure. The chip provides optical gain, the multimode interference cascade external cavity and the reflector form an external cavity feedback system, the functions of mode selection and line width narrowing are achieved, and single-mode output and line width narrowing can be achieved.

Description

External cavity narrow linewidth laser
Technical Field
The invention relates to the technical field of lasers, in particular to an external cavity narrow linewidth laser.
Background
As a core optical device in a high-speed communication system, a laser needs to have stable single-mode output, and with the increase of communication speed and communication capacity, a coherent technology is gradually used in a backbone network and a data center to increase the communication speed, and the requirement of the coherent technology on the line width of the laser to be less than hundred KHz requires that the laser not only needs stable single-mode output but also needs a narrow line width.
At present, a Distributed Bragg Reflector (DBR) laser and a distributed feedback laser (DFB) are mainly used as a single-mode laser, and both schemes realize single-mode output through the mode selection effect of a grating, which needs the support of a secondary epitaxy technology, and the growth difficulty of the DBR laser is increased due to the involvement of epitaxial growth between an active layer and a passive waveguide. For narrow linewidths, DBRs are one solution, but they have large phase noise and complicated epitaxial processes. The fiber single-frequency laser has narrow line width but high intensity noise. And the other is to realize line width narrowing by introducing an external cavity, wherein the external cavity can narrow the line width to be narrow, and has a simple relative process without a complex epitaxial technology.
Disclosure of Invention
The invention mainly aims to provide an external cavity narrow linewidth laser, aiming at solving the technical problem that the laser needs to be subjected to epitaxy with complex process if the laser needs single-mode output in the prior art.
In order to achieve the above object, the present invention provides an external cavity narrow linewidth laser, comprising:
the upper end surface of the heat sink is provided with a mounting area extending along the left-right direction;
the chip is arranged in the mounting area;
the electrode is arranged above the chip;
the coupling lens is arranged in the mounting area and is positioned on the right side of the chip;
the multimode interference waveguide structure comprises a plurality of single-mode waveguides and a plurality of multimode waveguides, wherein the plurality of single-mode waveguides and the plurality of multimode waveguides are sequentially and alternately arranged in the mounting area along an optical axis and are positioned on the right side of the coupling lens; and (c) a second step of,
and the reflecting structure is arranged in the mounting area and is positioned on the right side of the multimode interference waveguide structure.
Optionally, a plurality of the single-mode waveguides and a plurality of the multi-mode waveguides are arranged in a straight line.
Optionally, a plurality of the single-mode waveguides and a plurality of the multi-mode waveguides are arranged in a curve.
Optionally, the chip is a gain chip.
Optionally, the chip is a gallium arsenide-based semiconductor gain chip or an indium phosphide-based semiconductor gain chip.
Optionally, the left end face of the chip is an emergent light end face, and the right end face of the chip is a feedback light end face.
Optionally, the feedback optical end surface is plated with an antireflection film.
Optionally, the reflective structure is a highly reflective film.
Optionally, the reflective structure is a grating.
Optionally, the reflective structure is a planar mirror.
Optionally, the reflective structure is a fiber ring mirror.
Optionally, the single mode waveguide and the multimode waveguide are silicon-based waveguides.
Optionally, the silicon in the silicon-based waveguide is silicon dioxide or silicon nitride.
The multimode interference waveguide cascade external cavity narrow linewidth laser provided by the invention not only can realize mode selection, but also has the effect of line width narrowing due to the action of the external cavity. The principle of mode selection is mainly that single-mode regions and multi-mode regions exist alternately in a multi-mode interference waveguide structure, so that single-mode and multi-mode alternate appearance can occur in an optical signal in a transmission process, and a plurality of transmission paths, namely a plurality of resonant modes exist in the whole external cavity waveguide structure due to the fact that transmission paths of different transverse modes are different according to geometric optics, so that single-mode selection can be achieved according to a vernier effect.
Drawings
In order to more clearly illustrate the embodiments or technical solutions of the present invention, the drawings used in the embodiments or technical solutions of the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an external cavity narrow linewidth laser according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of the multi-mode interference waveguide structure of FIG. 1 in a curved arrangement;
FIG. 3 is a schematic view of the multi-mode interference waveguide structure of FIG. 1 in a straight line arrangement;
FIG. 4 is a schematic view of the structure of the ring reflector of FIG. 1;
fig. 5 is a schematic illustration of the connection of two single mode waveguides and one multimode waveguide of fig. 1.
The reference numbers illustrate:
reference numerals Name (R) Reference numerals Name (R)
100 External cavity narrow linewidth laser 4 Multi-mode interference waveguide structure
1 Chip and method for manufacturing the same 5 Reflection structure
2 Electrode for electrochemical cell 6 Heat sink
3 Coupling lens
The implementation, functional features and advantages of the present invention will be further described with reference to the accompanying drawings.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that, if directional indication is involved in the embodiment of the present invention, the directional indication is only used for explaining the relative positional relationship, the motion situation, and the like between the components in a certain posture, and if the certain posture is changed, the directional indication is changed accordingly.
In addition, if there is a description of "first", "second", etc. in an embodiment of the present invention, the description of "first", "second", etc. is for descriptive purposes only and is not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the feature. In addition, the meaning of "and/or" appearing throughout includes three juxtapositions, exemplified by "A and/or B" including either A or B or both A and B. Also, the technical solutions in the embodiments may be combined with each other, but must be based on the realization of those skilled in the art, and when the technical solutions are contradictory or cannot be realized, the combination of the technical solutions should be considered to be absent and not be within the protection scope of the present invention.
Referring to fig. 1 to 5, a multimode interference (MMI) waveguide cascaded external cavity narrow linewidth laser 100 is provided.
First, the structure of fig. 5 is described, which includes three waveguides, a narrow strip at both sides representing a single-mode waveguide, and a wide strip at the center representing a multi-mode waveguide, and the multi-mode interference cascade waveguide structure 4 of fig. 1 and 2 includes a plurality of the above-described single waveguide structures.
Referring to fig. 1 and 2, in the working process of the whole external cavity laser, a chip 1 is driven by the current injected from the electrode 2, a part of light is emitted through the left end face of the chip 1 as the emergent light of the whole laser, a part of light is coupled into the external cavity of the multimode interference cascade waveguide structure 4 through the right end face of the chip 1 and the coupling lens 3, the light wave keeps a single mode when passing through the single-mode waveguide in the multimode interference cascade waveguide structure 4, and multiple modes appear when entering the multimode waveguide region, and then the light wave passes through a waveguide process after entering the single-mode waveguide again. There are single mode and multi-mode changes in the course of passing through one waveguide, and therefore there are multiple optical mode transmission paths, and when multiple multi-mode interference (MMI) waveguides are cascaded, the optical path difference between the multiple optical mode transmission paths becomes significant, that is, there are multiple resonant modes in the whole external cavity, and then mode selection can be achieved according to the vernier effect. When the light of the selected mode is reflected by the reflection structure 5 of the terminal of the multi-mode interference waveguide structure 4, the light passes through the whole multi-mode interference waveguide structure 4 again, and then is fed back into the chip 1 through the coupling lens 3, which is that the chip 1 amplifies the mode selected by the multi-mode interference waveguide structure 4, and then the resonant amplification of the specific wavelength can be realized by repeating the above processes for many times.
In conclusion, the structure can not only realize single-mode selection, but also realize line width narrowing due to the introduction of the external cavity structure.
It should be noted that the chip 1, the coupling lens 3, and the multi-mode interference waveguide structure 4 are located on the same heat sink 6, and left end faces of the chip 1, the coupling lens 3, and the multi-mode interference waveguide structure 4 are located on the same optical axis. Chip 1 is a gain chip also referred to as a laser chip. The high-reflection film and the antireflection film are multilayer dielectric films and can respectively realize the effects of high reflectivity and high transmittance.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (13)

1. An external cavity narrow linewidth laser, comprising:
the upper end surface of the heat sink is provided with a mounting area extending along the left-right direction;
the chip is arranged in the mounting area;
the electrode is arranged above the chip;
the coupling lens is arranged in the mounting area and is positioned on the right side of the chip;
the multimode interference waveguide structure comprises a plurality of single-mode waveguides and a plurality of multimode waveguides, wherein the plurality of single-mode waveguides and the plurality of multimode waveguides are sequentially and alternately arranged in the mounting area along an optical axis and are positioned on the right side of the coupling lens; and (c) a second step of,
and the reflecting structure is arranged in the mounting area and is positioned on the right side of the multimode interference waveguide structure.
2. The external cavity narrow linewidth laser of claim 1 in which a plurality of said single mode waveguides and a plurality of said multimode waveguides are arranged in a straight line.
3. The external cavity narrow linewidth laser of claim 1 in which a plurality of said single mode waveguides and a plurality of said multimode waveguides are arranged in a curve.
4. The external cavity narrow linewidth laser of claim 1, wherein the chip is a gain chip.
5. The external cavity narrow linewidth laser of claim 4, wherein the gain chip is a gallium arsenide based semiconductor gain chip or an indium phosphide based semiconductor gain chip.
6. The external cavity narrow linewidth laser of claim 1, wherein a left facet of the chip is an exit facet and a right facet of the chip is a feedback facet.
7. The external cavity narrow linewidth laser of claim 6, wherein the feedback light end face is coated with an anti-reflection coating.
8. The external cavity narrow linewidth laser of claim 1, wherein the reflective structure is a high reflective film.
9. The external cavity narrow linewidth laser of claim 1, wherein the reflecting structure is a fiber ring mirror.
10. An external cavity narrow linewidth laser according to claim 1 wherein said reflective structure is a grating.
11. The external cavity narrow linewidth laser of claim 1, wherein the reflecting structure is a planar mirror.
12. The external cavity narrow linewidth laser of claim 1, wherein the single mode waveguide and the multimode waveguide are silica-based waveguides.
13. The external cavity narrow linewidth laser of claim 12 in which the silicon in the silicon-based waveguide is silicon dioxide or silicon nitride.
CN202110688731.XA 2021-06-21 2021-06-21 External cavity narrow linewidth laser Active CN113410755B (en)

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CN113410755B true CN113410755B (en) 2022-07-08

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000323781A (en) * 1999-05-13 2000-11-24 Nec Corp Semiconductor laser, semiconductor optical amplifier, and their manufacture
CN107611777A (en) * 2017-10-27 2018-01-19 武汉光迅科技股份有限公司 The narrow linewidth semiconductor outside cavity gas laser and control method of a kind of flexible wavelength
CN209233158U (en) * 2018-11-12 2019-08-09 苏州旭创科技有限公司 A kind of narrow linewidth adjustable extemal cavity laser
CN112397995A (en) * 2019-08-02 2021-02-23 苏州旭创科技有限公司 Narrow-linewidth fixed-wavelength laser and optical module

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000323781A (en) * 1999-05-13 2000-11-24 Nec Corp Semiconductor laser, semiconductor optical amplifier, and their manufacture
CN107611777A (en) * 2017-10-27 2018-01-19 武汉光迅科技股份有限公司 The narrow linewidth semiconductor outside cavity gas laser and control method of a kind of flexible wavelength
CN209233158U (en) * 2018-11-12 2019-08-09 苏州旭创科技有限公司 A kind of narrow linewidth adjustable extemal cavity laser
CN112397995A (en) * 2019-08-02 2021-02-23 苏州旭创科技有限公司 Narrow-linewidth fixed-wavelength laser and optical module

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
具有多模干涉波导结构InP基半导体激光器的研究;赖伟江;《中国优秀硕士论文全文数据库》;20111015(第10期);第25-27页 *

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