CN113410597A - Low-temperature infrared filter - Google Patents
Low-temperature infrared filter Download PDFInfo
- Publication number
- CN113410597A CN113410597A CN202110516504.9A CN202110516504A CN113410597A CN 113410597 A CN113410597 A CN 113410597A CN 202110516504 A CN202110516504 A CN 202110516504A CN 113410597 A CN113410597 A CN 113410597A
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- China
- Prior art keywords
- filter
- infrared
- cavity
- absorption part
- low
- Prior art date
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- Pending
Links
- 238000010521 absorption reaction Methods 0.000 claims abstract description 18
- 239000004020 conductor Substances 0.000 claims abstract description 15
- 239000003822 epoxy resin Substances 0.000 claims abstract description 15
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 15
- 239000011358 absorbing material Substances 0.000 claims abstract description 13
- 238000001914 filtration Methods 0.000 claims abstract description 7
- 230000000149 penetrating effect Effects 0.000 claims abstract description 4
- 238000002347 injection Methods 0.000 claims description 6
- 239000007924 injection Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 229910000906 Bronze Inorganic materials 0.000 claims description 3
- 229910052790 beryllium Inorganic materials 0.000 claims description 3
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000010974 bronze Substances 0.000 claims description 3
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 claims description 3
- -1 polytetrafluoroethylene Polymers 0.000 claims description 3
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 3
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 3
- 239000002245 particle Substances 0.000 abstract description 8
- 230000003071 parasitic effect Effects 0.000 abstract description 5
- 238000004891 communication Methods 0.000 abstract description 4
- 239000002096 quantum dot Substances 0.000 abstract description 4
- 239000007788 liquid Substances 0.000 abstract description 3
- 230000005540 biological transmission Effects 0.000 abstract description 2
- 239000001307 helium Substances 0.000 abstract description 2
- 229910052734 helium Inorganic materials 0.000 abstract description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 abstract description 2
- 238000002156 mixing Methods 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 238000003780 insertion Methods 0.000 description 4
- 230000037431 insertion Effects 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005610 quantum mechanics Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/207—Hollow waveguide filters
Landscapes
- Optical Filters (AREA)
Abstract
The invention relates to a low-temperature infrared filter which comprises a filter cavity, a filtering component arranged in the filter cavity, and an input connector and an output connector which are respectively arranged at openings at two ends of the filter cavity. The filter assembly comprises an infrared absorption part filled in the cavity of the filter and an inner conductor which is arranged in the infrared absorption part in a penetrating way, and two ends of the inner conductor are respectively connected with the input joint and the output joint. The invention can filter the parasitic phonon and photon quasi-particle by adding the low-temperature infrared filter on the signal path, thereby achieving the purpose of protecting the quantum bit. The low-temperature infrared filter can work below a liquid helium temperature zone, and an infrared absorption part made of a high-matching castable epoxy resin wave-absorbing material with a proper dielectric constant is used as a main body of the filter, so that infrared waves mixed in a microwave communication transmission path can be effectively absorbed.
Description
Technical Field
The invention relates to the technical field of microwave radio frequency communication, in particular to a low-temperature infrared filter.
Background
Quantum computers are computers that follow the laws of quantum mechanics, perform high-speed mathematical and logical operations, and process quantum information. However, high efficiency and weakness coexist, a superconducting qubit chip in a quantum computer works in an mK temperature region, quantum coherence of the superconducting qubit chip is easily influenced by unbalanced quasi-particles in the environment, and each line connecting the chip is likely to introduce the quasi-particles, so that the qubit is damaged.
Disclosure of Invention
The invention aims to provide a low-temperature infrared filter which can filter out parasitic phonons and photon quasi-particles and protect qubits.
In order to achieve the purpose, the invention adopts the following technical scheme:
a low-temperature infrared filter comprises a filter cavity, a filtering component arranged in the filter cavity, and an input connector and an output connector which are respectively arranged at openings at two ends of the filter cavity; the filter assembly comprises an infrared absorption part filled in the cavity of the filter and an inner conductor which is arranged in the infrared absorption part in a penetrating way, and two ends of the inner conductor are respectively connected with the input connector and the output connector.
Furthermore, two end openings of the filter cavity are respectively provided with an insulating dielectric plate, and two ends of the inner conductor respectively penetrate through the two insulating dielectric plates and then are connected with the input joint and the output joint.
Furthermore, the infrared absorption part is positioned between the two insulating medium plates.
Furthermore, the infrared absorption part adopts castable epoxy resin wave-absorbing material.
Further, the inner conductor is made of beryllium bronze.
Furthermore, the insulating medium plate is made of polytetrafluoroethylene materials.
Further, the input connector and the output connector adopt any one of SMA, N or DIN connectors. Preferably, the input connector and the output connector adopt double-female SMA connectors.
Furthermore, the filter cavity is provided with an injection hole and a vent hole.
According to the technical scheme, the low-temperature infrared filter is added to the signal path, so that parasitic phonons and photon quasi-particles can be filtered, and the purpose of protecting qubits can be achieved. The low-temperature infrared filter can work below a liquid helium temperature region, and an infrared absorption part made of a high-matching castable epoxy resin wave-absorbing material with a proper dielectric constant is used as a main body of the filter, so that infrared waves mixed in a microwave communication transmission path can be effectively absorbed. And the device of the low-temperature infrared filter is small in size, easy to assemble and debug and stable in performance at low temperature, and can well meet the requirements of the current related systems.
Drawings
Fig. 1 is a schematic structural view of a low-temperature infrared filter according to the present invention.
Wherein:
1. input connector, 2, output connector, 3, filter cavity, 4, infrared absorption portion, 5, insulating dielectric plate, 6, inner conductor, 7, air vent, 8, filling hole.
Detailed Description
The invention is further described below with reference to the accompanying drawings:
as shown in fig. 1, the low-temperature infrared filter includes a filter cavity 3, a filter assembly installed in the filter cavity 3, and an input connector 1 and an output connector 2 respectively installed at openings at two ends of the filter cavity 3. The filtering component comprises an infrared absorption part 4 filled in the cavity of the filter and an inner conductor 6 which is arranged in the infrared absorption part 4 in a penetrating way and two ends of which are respectively connected with the input connector 1 and the output connector 2. The low-temperature infrared filter is used for filtering infrared light of bad quasi-particles generated in a signal path when a microwave communication system works.
Furthermore, two end openings of the filter cavity 3 are respectively provided with an insulating dielectric plate 5, and two ends of the inner conductor 6 respectively penetrate through the two insulating dielectric plates 5 and then are connected with the input connector 1 and the output connector 2.
Further, the infrared absorption part 4 is located between the two insulating dielectric sheets 5.
Further, the input connector 1 and the output connector 2 adopt any one of SMA, N or DIN connectors. Preferably, in order to reduce the size of the filter, the input connector 1 and the output connector 2 adopt double-negative SMA connectors.
Furthermore, the infrared absorption part 4 adopts a castable epoxy resin wave-absorbing material, and the mixing ratio of the material is related to the insertion loss and out-of-band rejection of the filter. Preferably, the castable epoxy resin wave-absorbing material adopts ECCOSORB CR series, and the castable epoxy resin wave-absorbing material has extremely low loss in a C wave band and sharply increases loss in a frequency band of Ka and above. According to the huge difference of the loss of the castable epoxy resin wave-absorbing material in the C wave band, the Ka wave band and the frequency bands above, the infrared radiation of the mK temperature zone is selectively filtered. By adjusting the proportion of different castable epoxy resin wave-absorbing materials, for example, by adjusting the mixing proportion of ECCOSORB CR-110 and stycast2850, preferably, the proportion of ECCOSORB CR-110 and stycast2850 is set to 10: 1. The ECCOSORB CR-110 is low-pass frequency (C wave band), high-frequency resistance (more than Ka wave band), stycast2850 is extremely low in insertion loss and can relieve low-temperature stress, so that the insertion loss and out-of-band suppression of the filter can be controlled, infrared radiation is effectively eliminated, and the filter is easy to produce, assemble and debug.
Furthermore, the filter cavity 3 is made of copper materials, and the structure is stable and reliable.
Further, the inner conductor 6 is made of beryllium bronze.
Further, the insulating medium plate 5 is made of polytetrafluoroethylene. The insulating dielectric sheet 5 serves as a support member for supporting the inner conductor 6 and fixing the infrared absorbing section 4.
Furthermore, the filter cavity 3 is provided with an injection hole 8 and a vent hole 7. The injection hole is used for injecting the castable epoxy resin wave-absorbing material into the filter cavity, and in the injection process, gas in the filter cavity is exhausted through the vent hole. ECCOSORB CR-110 and stycast2850 are mixed, injected into the filter cavity from the injection hole by a syringe to form an infrared absorption part, then the infrared filter is placed into a vacuum cavity, vacuumized, residual gas in the mixed gel is removed, and after standing for 24 hours, the infrared filter is placed into liquid nitrogen to ensure no damage, thus the preparation is finished.
The parasitic phonon and photon quasi-particle at low temperature come from infrared heat radiation, a common cavity filter cannot filter out the parasitic phonon and photon quasi-particle, and the castable epoxy resin wave-absorbing material (ECCOSORB CR-110) adopted by the invention can absorb the part of infrared heat radiation at low temperature. In addition, the invention can relieve low-temperature stress and adjust loss by adding stycast2850 in castable epoxy resin wave-absorbing material (ECCOSORB CR-110).
Considering that the castable epoxy resin wave-absorbing material (ECCOSORB CR-110) has extremely low loss in a C wave band and sharply increases loss in a frequency band of Ka and above; and the heat conduction epoxy resin material stycast2850 full frequency channel loss is low to can alleviate stress, consequently, through mixing the two according to certain proportion, can realize the infrared filtering characteristic under the low temperature. The low-temperature filtering characteristic of the device is realized by mixing the castable epoxy resin, for example, ECCOSORB CR-110 and stycast2850 are mixed according to the proportion of 10:1 or other proportions, the insertion loss and out-of-band inhibition of the filter can be controlled, the influence of low-temperature stress can be relieved by mixing the stycast2850 (the stress can influence the reliability of the device and can also cause frequency band offset), and the infrared radiation is effectively eliminated.
The above-mentioned embodiments are merely illustrative of the preferred embodiments of the present invention, and do not limit the scope of the present invention, and various modifications and improvements of the technical solution of the present invention by those skilled in the art should fall within the protection scope defined by the claims of the present invention without departing from the spirit of the present invention.
Claims (8)
1. A low temperature infrared filter, characterized in that: the filter comprises a filter cavity, a filtering component arranged in the filter cavity, and an input connector and an output connector which are respectively arranged at openings at two ends of the filter cavity; the filter assembly comprises an infrared absorption part filled in the cavity of the filter and an inner conductor which is arranged in the infrared absorption part in a penetrating way, and two ends of the inner conductor are respectively connected with the input connector and the output connector.
2. A low temperature infrared filter according to claim 1, wherein: and two ends of the inner conductor respectively penetrate through the two insulating dielectric plates and then are connected with the input joint and the output joint.
3. A low temperature infrared filter according to claim 2, wherein: the infrared absorption part is positioned between the two insulating medium plates.
4. A low temperature infrared filter according to claim 1, wherein: the infrared absorption part adopts castable epoxy resin wave-absorbing material.
5. A low temperature infrared filter according to claim 1, wherein: the inner conductor is made of beryllium bronze.
6. A low temperature infrared filter according to claim 1, wherein: the insulating medium plate is made of polytetrafluoroethylene materials.
7. A low temperature infrared filter according to claim 1, wherein: the input connector and the output connector adopt any one of SMA, N or DIN connectors.
8. A low temperature infrared filter according to claim 1, wherein: and the filter cavity is provided with an injection hole and a vent hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110516504.9A CN113410597A (en) | 2021-05-12 | 2021-05-12 | Low-temperature infrared filter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110516504.9A CN113410597A (en) | 2021-05-12 | 2021-05-12 | Low-temperature infrared filter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113410597A true CN113410597A (en) | 2021-09-17 |
Family
ID=77678335
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110516504.9A Pending CN113410597A (en) | 2021-05-12 | 2021-05-12 | Low-temperature infrared filter |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113410597A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116706481A (en) * | 2023-08-07 | 2023-09-05 | 合肥国家实验室 | Absorption filter |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110026614A1 (en) * | 2005-08-04 | 2011-02-03 | Allen Edward H | Sensor Systems and Methods Using Entangled Quanta |
| US20140266513A1 (en) * | 2013-03-15 | 2014-09-18 | International Business Machines Corporation | Coaxial transmission line slot filter with absorptive matrix |
| US20170093015A1 (en) * | 2015-09-28 | 2017-03-30 | International Business Machines Corporation | Low-loss infrared filter for microwave measurement which integrates a distributed bragg reflector into a microwave transmission line |
| CN112305652A (en) * | 2019-07-26 | 2021-02-02 | 南京大学 | Infrared filter |
-
2021
- 2021-05-12 CN CN202110516504.9A patent/CN113410597A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110026614A1 (en) * | 2005-08-04 | 2011-02-03 | Allen Edward H | Sensor Systems and Methods Using Entangled Quanta |
| US20140266513A1 (en) * | 2013-03-15 | 2014-09-18 | International Business Machines Corporation | Coaxial transmission line slot filter with absorptive matrix |
| US20170093015A1 (en) * | 2015-09-28 | 2017-03-30 | International Business Machines Corporation | Low-loss infrared filter for microwave measurement which integrates a distributed bragg reflector into a microwave transmission line |
| CN112305652A (en) * | 2019-07-26 | 2021-02-02 | 南京大学 | Infrared filter |
Non-Patent Citations (1)
| Title |
|---|
| 张礼博: "超导量子比特的高精度操控研究", 《中国优秀硕士学位论文全文数据库》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116706481A (en) * | 2023-08-07 | 2023-09-05 | 合肥国家实验室 | Absorption filter |
| CN116706481B (en) * | 2023-08-07 | 2023-11-03 | 合肥国家实验室 | Absorption filter |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20210917 |
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| RJ01 | Rejection of invention patent application after publication |