CN113401864A - Method for preparing semiconductor micro-nano structure by laser assembly and application thereof - Google Patents
Method for preparing semiconductor micro-nano structure by laser assembly and application thereof Download PDFInfo
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
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- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
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- B82B3/0061—Methods for manipulating nanostructures
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
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- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/4204—Photometry, e.g. photographic exposure meter using electric radiation detectors with determination of ambient light
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/429—Photometry, e.g. photographic exposure meter using electric radiation detectors applied to measurement of ultraviolet light
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
Abstract
The invention discloses a method for preparing a semiconductor micro-nano structure by laser assembly and application thereof, belonging to the technical field of semiconductor preparation, namely precisely directly writing a black silicon micro-nano structure or a silicon carbide micro-nano structure by utilizing laser induced deposition. By dispersing trace semiconductor nano-particle particles in a deionized water solvent, under the condition of strong ultrasound for 30 minutes, the nano-particles form a colloidal solution with certain stability, and laser and colloidal solute nano-particles act to finally form a programmable and controllable semiconductor micro-nano structure with a high aspect ratio on an electrode. The main principle is that the momentum of laser is changed by utilizing the action of the laser and the nano particles, and the finally formed effect is that the nano particles are gathered near the focus of the laser, and most of the nano particles are diffused in the form of heat after absorbing light energy, so that the particles are welded on an electrode substrate.
Description
Technical Field
The invention belongs to the technical field of semiconductor preparation, and particularly relates to a photoelectric device with high responsivity, which is obtained by depositing silicon nanoparticles and silicon carbide nanoparticles into a micro-nano wire and a multi-nanopore micro-nano structure which are patterned in any two dimensions and have high aspect ratios.
Background
With the rapid development of electronic devices, semiconductor materials have important applications in the fields of photodetectors, solar cells, and the like. The black silicon material has high absorption in a wide spectrum range and has the advantages of good stability and the like, so that photoelectric devices based on the black silicon have excellent performance. However, the previous methods for preparing black silicon have certain limitations, mainly lack of flexible processing means and simple preparation flow. Silicon carbide material has excellent chemical reagent resistance stability, high temperature stability, low expansion coefficient and high strength, so that silicon carbide is one of the main materials for preparing high-performance photoelectric detectors. However, due to the brittleness of the silicon carbide bulk material, the related research of preparing the flexible electronic device by using the silicon carbide is lacked at present, mainly due to the lack of flexible processing means and simple preparation flow.
At present, the method for preparing black silicon: the metal-assisted chemical etching method utilizes metal nano particles attached to the surface of the silicon to catalyze the etching of the surface of the silicon by acid, and then utilizes sodium hydroxide to remove the metal nano particles, thereby finally obtaining the black silicon. The method for preparing the black silicon by the femtosecond laser ablation is to ablate on the surface of the silicon by the femtosecond laser and prepare the black silicon by the laser ablation. The plasma etching method is that nanometer silver particles are deposited on the surface of a silicon wafer to form a nanometer silver particle mask; and carrying out plasma etching on the silicon wafer with the nano silver particle mask so as to form a nano light trapping structure on the surface of the silicon wafer. However, the prior art mainly depends too much on silicon wafers, the selectable types and applications of black silicon-based photoelectric devices are limited by the problems of high energy consumption, complex operation, long reaction time, high cost and the like in the preparation process, and the prepared black silicon microwire nanowires need complex post-transfer to prepare electric shock devices, so that the requirements of mass production and environmental protection cannot be met. The method for preparing the flexible SiC electronic device comprises the following steps: and depositing the precursor on a silicon wafer by using a high-temperature vapor deposition method to obtain a silicon carbide nano film, etching the Si substrate, and transferring the silicon carbide nano film to the flexible substrate, thereby preparing the silicon carbide-based flexible electronic device. The volume reduction method reduces the thickness of the SiC body material by a physical means, so as to prepare the SiC-based nano film and further prepare the SiC-based flexible electronic device. However, the prior art mainly faces the problems of high energy consumption, complex operation, long reaction time, high cost and the like in the preparation process, and the prepared flexible electronic device generally combines the sensing material, the electrode and the flexible substrate together, so that the device has poor durability, the service life of the device is shortened, and the requirement of long-term use cannot be met.
Disclosure of Invention
Aiming at the defects of the prior art, the technical problems to be solved by the invention are as follows: the method for preparing the semiconductor micro-nano structure by laser assembly is provided, namely, the black silicon micro-nano structure or the silicon carbide micro-nano structure is accurately directly written by utilizing the laser-induced deposition effect. By dispersing trace semiconductor nano-particle particles in a deionized water solvent, under the condition of strong ultrasound for 30 minutes, the nano-particles form a colloidal solution with certain stability, and laser and colloidal solute nano-particles act to finally form a programmable and controllable semiconductor micro-nano structure with a high aspect ratio on an electrode. The main principle is that the momentum of laser is changed by utilizing the action of the laser and the nano particles, and the finally formed effect is that the nano particles are gathered near the focus of the laser, and most of the nano particles are diffused in the form of heat after absorbing light energy, so that the particles are welded on an electrode substrate.
The invention is realized by the following technical scheme:
a method for preparing a semiconductor micro-nano structure by laser assembly comprises the following specific steps:
(1) preparing an electrode;
the method comprises the following specific steps: firstly, wiping a clean substrate for six times by using deionized water and absolute ethyl alcohol alternately and naturally drying in the shade in a closed space; then baking and evaporating the noble metal nano layer on the noble metal nano layer, and then cutting the noble metal layer by using a sharp blade to form a channel; then detecting whether the two sides of the channel are conductive or not, and obtaining a usable electrode after confirming that the channel is not conductive;
(2) forming a nanoparticle colloidal solution;
the method comprises the following specific steps: firstly, respectively dispersing a proper amount of semiconductor nano particles in deionized water, and placing the deionized water in an ultrasonic machine for ultrasonic treatment; then, packaging the obtained semiconductor nano particle colloidal solution for later use;
(3) laser induction;
the method comprises the following specific steps: firstly, dripping a trace amount of semiconductor nano particle colloidal solution on the electrode prepared in the step (1) to enable the colloidal solution to fall between two ends of an electrode channel; then, controlling laser to directly act with colloidal solute by using a computer program to prepare micro-nano wires in an inducing way; and finally, washing with deionized water for four to six times to obtain the semiconductor micro-nano structure with controllable programming and high aspect ratio assembled by the semiconductor nano particles on the substrate.
Further, the noble metal nano layer in the step (1) is made of gold-germanium-nickel alloy, the baking evaporation thickness is 15-35nm, the dosage for baking the alloy is 10-30g, the baking heating current is 80-110A, and the baking time is 10-40 min; the substrates used were glass and polyimide with dimensions of 50 × 25 × 0.2 mm; the cotton ball is medical absorbent cotton ball.
Further, the test electrode conducting device for detecting whether the two sides of the channel are conducting is a Gicherley 2600 series (Kethiley Model 2600), the fixed alternating voltage is set to be 20V, the frequency is 50 Hz, the average value of the measured current under 25 alternating current periods is taken for the collection of each data point, namely the average value of the current change in 0.5s, and when the current value at the two ends of the electrode is not more than 1 x 10-10A will be considered as the non-conducting case.
Further, the mass percentage of the semiconductor nano particles and the deionized water in the step (2) is 0.2-2.0%; the encapsulation is to put the obtained colloidal solution into a 5 ml centrifuge tube and seal it with a sealing film.
Further, the semiconductor nanoparticles are silicon nanoparticles or silicon carbide nanoparticles, the silicon nanoparticles are directly purchased from nanoparticle pure solid powder of Aladdin reagent company Limited, and the particle diameter of the silicon nanoparticles is 50-70 nm; the silicon carbide nano particles are directly purchased from nano particle pure solid powder of Aladdin reagent company Limited, and the particle size of the silicon carbide nano particles is 80-100 nm.
Further, the laser in the step (3) is femtosecond laser, the wavelength of the femtosecond laser is 343-; the laser light path is as follows: firstly, the femtosecond laser emitted by a laser passes through a first convex lens L1 and a shutter G and then is expanded by a second convex lens L2 to expand light spots, then the light spots are sequentially subjected to beam shaping by a first full-reflecting mirror M1, a second full-reflecting mirror M2, a third convex lens L3 and a fourth convex lens L4, and the light spots are sequentially focused by an attenuation sheet S, a first half-reflecting semi-transparent mirror M3 and an objective lens and then are incident to a sample to be processed. The prepared semiconductor microwire has a width diameter range of 500nm-1mm and a length range of 500nm-1mm, and 23s is required for preparing a semiconductor microwire with a width of 1 μm and a length of 100 μm.
Further, the laser scanning direction adopts a mode of scanning layer by layer from top to bottom to carry out laser processing; firstly, according to the designed pattern, the layer spacing is 0.1-0.2 μm, the layer number is 5-30, and the number of the required scanning points of each layer is 6 multiplied by 103-3×104(ii) a The laser scanning speed was 0.2X 10 in the horizontal direction-4-1×10-4m/s。
The invention also provides application of the method for preparing the semiconductor micro-nano structure by using the laser assembly technology in the aspects of photoelectric detectors and image sensing, namely, uniform and controllable semiconductor micro-nano structures prepared by directly inducing a target substrate by using laser form a photoelectric detector array with high responsivity to sense a target image.
Compared with the prior art, the invention has the following advantages:
(1) the controllable and uniform semiconductor micro-nano structure with high aspect ratio can be rapidly obtained by utilizing a laser-induced deposition method, and the method has great application potential in the application aspect of microelectronic devices;
(2) the semiconductor micro-nano structure deposited by laser induction does not need a mask and an organic solvent, and the induction preparation process is green and environment-friendly and has low energy consumption; the preparation can be directly carried out on a target substrate, a complex transfer process is not needed, and the preparation can be carried out on a flexible substrate;
(3) the method for utilizing the micro-nano structure of laser induced deposition has the advantages of adjustable size and controllable appearance, and can design the size and the appearance of a sensitive material according to the requirements of users.
Drawings
FIG. 1 is a schematic diagram of an optical path using laser technology according to the present invention;
FIG. 2 is a schematic flow chart of a method for fabricating a semiconductor micro-nano structure by using a laser assembly technique according to the present invention;
FIG. 3 is an optical microscope photograph of a black silicon micro-nano wire prepared by a semiconductor micro-nano structure prepared by a laser assembly technique according to the present invention;
FIG. 4 is a scanning microscope photograph of black silicon with triangular patterns prepared by using a laser assembly technique to prepare a semiconductor micro-nano structure according to the present invention;
FIG. 5 is a partial enlarged view of a scanning electron microscope of black silicon prepared by a method for preparing a semiconductor micro-nano structure by using a laser assembly technology according to the present invention;
FIG. 6 shows the photoelectric response of a semiconductor micro-nanowire-based photodetector at different temperatures according to the present invention;
FIG. 7 shows response time and recovery time of a semiconductor micro-nanowire-based photodetector at different temperatures according to the present invention;
FIG. 8 is a graph of the responsivity of a semiconductor micro-nanowire-based photodetector of the present invention at different temperatures;
FIG. 9 shows the detectivity of a semiconductor micro-nanowire-based photodetector of the present invention at different temperatures;
FIG. 10 is a comparison of performances of a micro-nano line photoelectric detector based on semiconductors with different numbers according to the present invention;
wherein: a is the photocurrent and dark current of a photoelectric detector based on 1, 2, 4, 8 and 16 semiconductor micro-nano lines, b is the resistance of a device based on different numbers of micro-nano lines under the ultraviolet illumination condition and the dark condition, c is the responsivity of the device, and d is the detectivity of the device;
FIG. 11 is a semiconductor micro-nano wire based photodetector integrated with an external circuit and an LED for detecting ultraviolet rays of different intensities in accordance with the present invention;
wherein: a is a real photo of the external circuit and the LED lamp under the irradiation of ultraviolet light with the light intensity of 15.4mW/cm2, b is a real photo of the external circuit and the LED lamp under the irradiation of ultraviolet light with the light intensity of 8.41mW/cm2, c is a real photo of the external circuit and the LED lamp under the irradiation of ultraviolet light with the light intensity of 4.58mW/cm2, d is a real photo of the external circuit and the LED lamp under the irradiation of ultraviolet light with the light intensity of 2.153mW/cm2, and e is a real photo of the external circuit and the LED lamp under the dark condition;
fig. 12 is a semiconductor micro-nano line-based photodetector array of the present invention, which is used as an image sensor for sensing;
wherein: a is a schematic diagram of an image sensor, b is a schematic diagram of a mask, and c is an image of the image sensor on a target image in an environment of room temperature, 50 ℃ and 100 ℃;
FIG. 13 shows the response of a flexible UV photodetector based on semiconductor micro-nanowires under different bending angles;
wherein: a is a physical diagram of the flexible photoelectric detector based on the semiconductor micron line with different bending degrees, b is a response curve of the device under the irradiation of ultraviolet light with the light intensity of 15.4mW/cm2 corresponding to different bending angles;
fig. 14 shows the response of the flexible ultraviolet photodetector based on the semiconductor micro-nanowire after being bent for different times.
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the present invention, are given by way of illustration and explanation only, not limitation.
Example 1
And (3) preparing the semiconductor micro-nano line photoelectric detector with high aspect ratio, which is accurate and controllable by utilizing laser induction.
The method comprises the steps of utilizing a substrate electrode prepared in advance, dripping a dispersed semiconductor nanoparticle colloidal solution onto the substrate electrode by using an injector, then carrying out laser direct writing on the colloidal solution, and forming a semiconductor micro-nano structure with high aspect ratio of program-controllable morphology along a laser scanning area under the limiting action of a laser light field on silicon nano particles when colloidal solute is under the action of laser.
As shown in fig. 2, the method for preparing the semiconductor micro-nano structure photoelectric detector with the precise and controllable high aspect ratio comprises the following specific steps:
(1) and preparing an electrode: the used electrode substrate is glass and flexible polyimide with the size of 50 × 25 × 0.2 mm, and the used electrode metal layer is gold-germanium-nickel alloy; firstly, wiping a glass sheet and polyimide by using deionized water prepared in a laboratory and absolute ethyl alcohol with the concentration of 99.5 percent alternately for six times by using a medical absorbent cotton ball, and naturally drying the wiped glass sheet and polyimide in the shade in a dark closed space built in a self-made paper box; then baking and evaporating a gold-germanium-nickel noble metal nano layer on the metal layer, wherein the thickness of the noble metal nano layer is 15nm, detecting whether the metal layer is conductive or not by using a Gishili model 2600 active ammeter, and confirming that the detected current value is higher than 1 x 10-3After A, a noble metal-attached glass is usable. Then, a sharp medical cell scraper blade is used for cutting the noble metal layer to form an electric insulation channel, and the width of the channel is 112 nm; then, a Gittis 2600 active ammeter is used for detecting whether two sides of the channel are insulated or not, and the detected current value is confirmed to be lower than 1 x 10-10A, a usable electrode is obtained.
(2) Forming a nanoparticle colloidal solution; firstly, 12mg of silicon nano particles and 6mL of deionized water are weighed and mixed in an ultrasonic machine for 30min, and a colloidal solution with the mass fraction of 0.2% is formed. In addition, a 0.2% silicon carbide colloidal solution was prepared in the same manner.
(3) Laser induction;
the method comprises the following specific steps: the silicon nanoparticles and silicon carbide nanoparticles are directly purchased from pure solid nanoparticle powder of Aladdin reagent company Limited, and the average particle diameters are 60nm and 90nm respectively; firstly, 50 mu L of nanoparticle colloid is dripped on a gold-germanium-nickel electrode channel, and semiconductor nanoparticles are rapidly deposited in the electrode channel under the action of laser and colloid solute to form a single micro-nanowire channel. Firstly, according to the designed structure and the layer-by-layer scanning mode, the colloidal silica solution is scanned layer by layer, the single-point exposure time is 1000 microseconds, the point-line-surface spacing is 200 nanometers, the layer number is 10, and the processing time is 1 minute and 36 seconds. The femtosecond laser used in the process has the wavelength of 800nm, the pulse frequency of 200kHz and the laser power required by the experiment of 11 mW. The movement track of the laser focus is designed by utilizing 3Dmax software to be preset, then is exported from the software to be a txt format file, and then is imported into a control computer of a femtosecond laser direct writing system. The electrode is ensured to be vertical to the optical axis of the laser in the processing process. In this way, the micro-nano wire with the preset morphology can be obtained. The colloidal solute that has not been laser processed and the remaining processing debris are washed with deionized water.
As can be seen from fig. 1, the laser path is: firstly, the femtosecond laser emitted by the laser passes through a first convex lens L1 and a shutter G, then is expanded by a second convex lens L2, expands light spots, then sequentially passes through a first full-reflecting mirror M1, a second full-reflecting mirror M2, a third convex lens L3 and a fourth convex lens L4 for beam shaping, and is focused by an attenuation sheet S, a first half-reflecting semi-transparent mirror M3 and an objective lens to be incident to a sample to be processed. The transmitted light beam sequentially passes through the second half-reflecting half-transmitting mirror M4, the fifth convex lens L5 and the CCD to form an image of a processed sample on a computer. An external light source mercury lamp passes through the sixth convex lens L6 and the third full-reflecting mirror M5, so that the background of the processing area is illuminated, and the computer image is clearer.
As can be seen from fig. 2, only a trace amount of semiconductor nanoparticle colloidal solution is required to be dropped into the channel on the electrode channel, and colloidal solute, i.e., semiconductor nanoparticles, is precipitated under the action of femtosecond laser; and after the scanning of the processing program is finished, immediately cleaning the semiconductor micro-nano structure device for 6 times by using deionized water to obtain a clean semiconductor micro-nano structure device.
As can be seen from fig. 3, the processing of the semiconductor micro-nano structure has good flexibility, and the number of micro-nano wires can be well controlled.
As can be seen from fig. 4, the processing of the semiconductor micro-nano structure can be processed into any two-dimensional pattern according to the requirement through a control program.
As can be seen from fig. 5, the surface of the prepared semiconductor micro-nano structure has a porous structure, so that the absorption of light is enhanced, the reflection of light is reduced, and the processed nanoparticles still maintain the morphology of nanoparticles.
Example 2
Ultraviolet light monitoring based on high aspect ratio black silicon micro-nanowires.
The black silicon micro-nano wire prepared by laser assembly has the characteristics of high aspect ratio and controllable appearance, and can be used for preparing high-quality photoelectric devices. During ultraviolet irradiation, the black silicon micro-nano wire has a controllable ultra-high aspect ratio and nano-holes accumulated by nano-particles, so that the optical path of incident ultraviolet light can be increased, the reflection of the ultraviolet light is reduced, the absorption of the light is enhanced, and the photoelectric detector with high response is prepared.
The method for preparing the photoelectric detector by utilizing the black silicon micro-nano wire with the high aspect ratio comprises the following specific steps:
the procedures (1), (2) and (3) are the same as those in example 1.
(4) And preparing a photoelectric detector: naturally drying the obtained electrode in the steps (1), (2) and (3) in a dark box for 48h, and tightly attaching silver wires to two sides of the electrode by using silver conductive adhesive.
(5) Detection of ultraviolet light: the photoelectric detector prepared above is used for detecting the sensing performance at room temperature (25 ℃) and normal pressure. When the current of the device is stable under a constant applied voltage (1V), the laser with the wavelength of 365nm is irradiated on the device, and the switch of the laser and the light intensity of the ultraviolet laser are controlled by controlling the program of the laser. A computer controlled pean meter (model number 2600, gishili) outputs a constant voltage and records the measurement of the current change over time as an output signal. R responsivity is defined as the deviceThe ratio of the photocurrent of the element to the intensity of the incident ultraviolet light, the detectivity D being defined as the reciprocal of the detectivity defined as the equivalent noise power (NEP) which is: when the signal current or voltage is equal to the rms current (or rms voltage) of the noise, the corresponding incident radiant flux Φ e is called the equivalent noise power. From the initial value of the current to 90% (I) of the maximum value of the currentmax) Is defined as the response time, ImaxTo 0.10ImaxIs defined as the recovery time, where ImaxIs a stable current generated under the irradiation of ultraviolet light.
As can be seen from fig. 6 and 7, the high aspect ratio black silicon micro-nanowire sensor exhibits a response curve to ultraviolet light at different temperatures; and as the temperature rises from room temperature to 100 ℃, the black silicon-based photodetector can stably work, and the response speed and the recovery speed are also increased along with the temperature rise, thereby showing the excellent thermal stability of the device.
As can be seen from FIGS. 8 and 9, the responsivity and detection rate of the black silicon micro-nano line photoelectric detector can reach 231A/W and 1.78 × 10 respectively9Jones, shows the superior response characteristics of the device.
As can be seen from fig. 10, the device performance of the black silicon micro-nanowire sensor based on different numbers is different. It can be seen from the figure that as the number of the black silicon microwires in the device increases from 1 to 16, both the dark current and the photocurrent of the device increase, because as the number of the black silicon microwires increases, it is equivalent to that a plurality of photodetectors based on a single microwire are connected in parallel, so the resistance of the device also increases, and the responsivity and the detectivity of the device are correspondingly calculated.
As can be seen from fig. 11, the black silicon-based micro-nanowire sensor can detect ultraviolet light of different intensities. As can be seen from the figure, after the prepared black silicon photoelectric detector is integrated with an external circuit, the ultraviolet light intensity can be finally reflected through the brightness of the LED lamp by designing the circuit, so that the detection of the ultraviolet light intensity of the surrounding environment is realized.
As can be seen from fig. 12, the black silicon-based micro-nanowire sensor can be rapidly fabricated in large quantities using a laser assembly method. The black silicon micro-nanowire-based photoelectric detector array is prepared, imaging of a target pattern is finally achieved through calculation of photocurrent of each photoelectric detector, and finally the image sensor capable of working stably at different temperatures is prepared.
Example 3
A flexible ultraviolet photodetector based on high aspect ratio silicon carbide micro-nanowires.
The silicon carbide prepared by inducing the laser on the flexible substrate has the characteristics of high aspect ratio and controllable appearance, and can be used as a high-quality flexible electronic device. The laser can be used for assembling silicon nano particles and micro nano wires with high aspect ratio for silicon carbide nano particles, and the whole process of laser assembly has no selectivity on a substrate. Finally, the silicon carbide micro-nano wires are assembled on the flexible substrate through laser in an experiment, and the tight acting force between the silicon carbide nano particles deposited through the laser and the flexible substrate enables the device to still detect ultraviolet light after being bent for many times, so that the tolerance of the device is enhanced.
The flexible ultraviolet photoelectric detector is prepared by utilizing the silicon carbide micro-nano wire with the high aspect ratio, and the method comprises the following specific steps:
the procedures (1), (2) and (3) are the same as those in example 1.
Steps (4) and (5) were the same as in example 2.
As can be seen from fig. 13, the device can also monitor ultraviolet light when the flexible photodetector based on the silicon carbide micro-nanowire is bent at different angles.
As can be seen from fig. 14, after the flexible photodetector based on the silicon carbide micro-nanowire is bent 2000 times, the device can also monitor ultraviolet light, and the superior mechanical stability of the device is demonstrated.
Claims (8)
1. A method for preparing a semiconductor micro-nano structure by laser assembly is characterized by comprising the following specific steps:
(1) preparing an electrode;
the method comprises the following specific steps: firstly, wiping a clean substrate for six times by using deionized water and absolute ethyl alcohol alternately and naturally drying in the shade in a closed space; then baking and evaporating the noble metal nano layer on the noble metal nano layer, and then cutting the noble metal layer by using a sharp blade to form a channel; then detecting whether the two sides of the channel are conductive or not, and obtaining a usable electrode after confirming that the channel is not conductive;
(2) forming a nanoparticle colloidal solution;
the method comprises the following specific steps: firstly, respectively dispersing a proper amount of semiconductor nano particles in deionized water, and placing the deionized water in an ultrasonic machine for ultrasonic treatment; then, packaging the obtained semiconductor nano particle colloidal solution for later use;
(3) laser induction;
the method comprises the following specific steps: firstly, dripping a trace amount of semiconductor nano particle colloidal solution on the electrode prepared in the step (1) to enable the colloidal solution to fall between two ends of an electrode channel; then, controlling laser to directly act with colloidal solute by using a computer program to prepare micro-nano wires in an inducing way; and finally, washing with deionized water for four to six times to obtain the semiconductor micro-nano structure with controllable programming and high aspect ratio assembled by the semiconductor nano particles on the substrate.
2. The method for fabricating a semiconductor micro-nano structure by laser assembly according to claim 1, wherein the noble metal nano layer in the step (1) is made of gold-germanium-nickel alloy, the baking evaporation thickness is 15-35nm, the dosage for baking the alloy is 10-30g, the baking heating current is 80-110A, and the baking time is 10-40 min; the substrates used were glass and polyimide with dimensions of 50 × 25 × 0.2 mm; the cotton ball is medical absorbent cotton ball.
3. The method of claim 1, wherein the conducting device of the testing electrode for detecting whether the two sides of the channel are conducting is Gekkili 2600 series, the fixed AC voltage is set to be 20V, the frequency is 50 Hz, the average value of the current variation in 0.5s is obtained for each data point, and when the current value at the two ends of the electrode is not more than 1 x 10-10A will be considered as the non-conducting case.
4. The method for preparing a semiconductor micro-nano structure by laser assembly according to claim 1, wherein the mass percentage of the semiconductor nano particles and the deionized water in the step (2) is 0.2-2.0%; the encapsulation is to put the obtained colloidal solution into a 5 ml centrifuge tube and seal it with a sealing film.
5. The method for fabricating semiconductor micro-nano structures by laser assembly according to claim 1, wherein the semiconductor nanoparticles are silicon nanoparticles or silicon carbide nanoparticles, the silicon nanoparticles are directly purchased from nanoparticle pure solid powder of alatin reagent ltd, and the particle diameter is 50-70 nm; the silicon carbide nano particles are directly purchased from nano particle pure solid powder of Aladdin reagent company Limited, and the particle size of the silicon carbide nano particles is 80-100 nm.
6. The method as claimed in claim 1, wherein the laser in step (3) is femtosecond laser with a femtosecond laser wavelength of 343-; the laser light path is as follows: firstly, the femtosecond laser emitted by a laser passes through a first convex lens L1 and a shutter G and then is expanded by a second convex lens L2 to expand light spots, then the light spots are sequentially subjected to beam shaping by a first full-reflecting mirror M1, a second full-reflecting mirror M2, a third convex lens L3 and a fourth convex lens L4, and the light spots are sequentially focused by an attenuation sheet S, a first half-reflecting semi-transparent mirror M3 and an objective lens and then are incident to a sample to be processed. The prepared semiconductor microwire has a width diameter range of 500nm-1mm and a length range of 500nm-1mm, and 23s is required for preparing a semiconductor microwire with a width of 1 μm and a length of 100 μm.
7. The method of claim 1, wherein the micro-nano structure is fabricated by laser assemblyThe laser processing is carried out in a mode of scanning layer by layer from top to bottom in the laser scanning direction; firstly, according to the designed pattern, the layer spacing is 0.1-0.2 μm, the layer number is 5-30, and the number of the required scanning points of each layer is 6 multiplied by 103-3×104(ii) a The laser scanning speed was 0.2X 10 in the horizontal direction-4-1×10-4m/s。
8. The method of claim 1, wherein the method is applied to a photodetector and an image sensor.
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