CN113381701B - Microwave solid-state power amplifier - Google Patents
Microwave solid-state power amplifier Download PDFInfo
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- CN113381701B CN113381701B CN202110743088.6A CN202110743088A CN113381701B CN 113381701 B CN113381701 B CN 113381701B CN 202110743088 A CN202110743088 A CN 202110743088A CN 113381701 B CN113381701 B CN 113381701B
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- circuit
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- power amplifier
- matching
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
- G01R31/2822—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere of microwave or radiofrequency circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K5/00—Casings, cabinets or drawers for electric apparatus
- H05K5/0004—Casings, cabinets or drawers for electric apparatus comprising several parts forming a closed casing
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K5/00—Casings, cabinets or drawers for electric apparatus
- H05K5/0026—Casings, cabinets or drawers for electric apparatus provided with connectors and printed circuit boards [PCB], e.g. automotive electronic control units
- H05K5/0047—Casings, cabinets or drawers for electric apparatus provided with connectors and printed circuit boards [PCB], e.g. automotive electronic control units having a two-part housing enclosing a PCB
- H05K5/0052—Casings, cabinets or drawers for electric apparatus provided with connectors and printed circuit boards [PCB], e.g. automotive electronic control units having a two-part housing enclosing a PCB characterized by joining features of the housing parts
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K5/00—Casings, cabinets or drawers for electric apparatus
- H05K5/02—Details
- H05K5/0247—Electrical details of casings, e.g. terminals, passages for cables or wiring
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K5/00—Casings, cabinets or drawers for electric apparatus
- H05K5/02—Details
- H05K5/03—Covers
Abstract
The invention discloses a microwave solid-state power amplifier, which comprises a box body, a cover body, a power output circuit, a coupling circuit, a matching circuit and a detection circuit, wherein the power output circuit, the coupling circuit, the matching circuit and the detection circuit are all arranged in the box body; the matching circuit comprises a fixed attenuator and a matching microstrip line; after being amplified by the final power amplifier, the microwave signal is transmitted to the output isolator through the first capacitor, the other path of the microwave signal passes through the coupling circuit, the coupling circuit generates a coupling microwave signal, and the coupling microwave signal enters the detection circuit through the fixed attenuator and the matching microstrip line to generate a detection level. The invention realizes the stable coupling detection level of the output port of the microwave solid-state power amplifier and is not easy to be interfered.
Description
Technical Field
The invention relates to the technical field of microwave radio frequency circuits, in particular to a microwave solid-state power amplifier.
Background
The microwave solid-state power amplifier has the main function of amplifying the power of a microwave signal and transmitting the microwave signal to an antenna. In the use of the microwave solid-state power amplifier, particularly after the microwave solid-state power amplifier is installed in a system, the output power of the microwave solid-state power amplifier cannot be directly measured, and in order to grasp whether the output power of the microwave solid-state power amplifier is normal or measure the size of the output power, a coupling detection circuit is designed at an output port of the microwave solid-state power amplifier, and a detection level is generated to represent and quantify the size of the output power. The coupling detection circuit of conventional design all is in the solid-state power amplifier output port of microwave, be located same cavity with power output circuit, when solid-state power amplifier output power of microwave is stronger, because the effect of electromagnetic field, make the signal that gets into the detector device have the coupler coupling signal, there is the interfering signal through the electromagnetic field effect again, the detection level that can make the detector device output is unstable, in the solid-state power amplifier operating frequency band of microwave, the detection level under the different frequency has great difference, can influence detection level characterization output power's stability and the degree of accuracy greatly.
Therefore, how to stabilize the coupling detection level of the output port of the microwave solid-state power amplifier and make it not easily interfered has become a technical problem to be solved in the industry at present.
Disclosure of Invention
The invention provides a microwave solid-state power amplifier, aiming at the problem of the stability of a microwave solid-state power amplifier output port coupling detection circuit in the prior art.
In order to solve the technical problems, the technical scheme of the invention is as follows:
the utility model provides a solid-state power amplifier of microwave, includes box body, lid, power output circuit, coupling circuit, matching circuit and detection circuit all set up in the box body, its characterized in that: the power output circuit comprises a final power amplifier, a first capacitor and an output isolator; the matching circuit comprises a fixed attenuator and a matching microstrip line; after being amplified by the final power amplifier, the microwave signal is transmitted to the output isolator through one path of the first capacitor, the other path of the microwave signal passes through the coupling circuit, and the coupling circuit generates a coupling microwave signal which enters the detection circuit through the fixed attenuator and the matching microstrip line to generate a detection level.
Preferably, the coupling circuit comprises a microstrip coupler and a first resistor; the input end of the microstrip coupler is coupled with the output end of the first capacitor, the output end of the microstrip coupler is connected with one end of the first resistor and the input end of the fixed attenuator respectively, and the other end of the first resistor is grounded.
Preferably, the detector circuit includes a detector diode, a second resistor, a third resistor, a second capacitor, a third capacitor, and a fourth capacitor; the anode of the detection diode is connected with the fixed attenuator through the matching microstrip line, the cathode of the detection diode is respectively connected with one end of the second capacitor and one end of the third resistor, the other end of the second capacitor is grounded, the other end of the third resistor is used as a detection level port and is respectively connected with one end of the second resistor, one end of the third capacitor and one end of the fourth capacitor, and the other ends of the second resistor, the third capacitor and the fourth capacitor are grounded.
Preferably, the power output circuit, the coupling circuit, the matching circuit and the detection circuit are made of flexible substrates.
Preferably, the box body is provided with two cavities, a base and a barrier are arranged in each cavity, and the power output circuit, the coupling circuit, the matching circuit and the detection circuit are all arranged on the surface of the base and are separated by the barrier; the power output circuit, the coupling circuit and the fixed attenuator are arranged in the same cavity; the matching microstrip line and the detection circuit are arranged in the other cavity; the partition fence is further arranged between the two cavities, and a wire groove is formed in the bottom of the partition fence.
Preferably, the box body and the cover body are both made of aluminum alloy materials.
Preferably, the cover body is provided with a boss which is connected with the box body in a shape matching manner.
Compared with the prior art, the invention has the beneficial effects that:
(1) The coupling circuit and the detection circuit are divided by different cavities, and barrier shielding is added, so that electromagnetic field interference of a high-power signal in the power output circuit on the detection circuit can be eliminated, and a stable detection level is obtained;
(2) The matching circuit between the coupling circuit and the detection circuit can be used for tuning the consistency of the detection level within a certain bandwidth, reducing the fluctuation of the detection level along with the frequency and enhancing the frequency band adaptability of the coupling detection circuit;
(3) The system has the characteristics of simple circuit, easy realization and certain universality, and can be widely applied to electronic systems such as satellite communication, radar, measurement and control, navigation, countermeasure and the like.
Drawings
Fig. 1 is a circuit diagram of a microwave solid-state power amplifier according to the present invention.
FIG. 2 is a block diagram of a microwave solid-state power amplifier according to the present invention;
FIG. 3 isbase:Sub>A sectional view taken along line A-A of FIG. 2;
fig. 4 is a structural diagram of a cover of a microwave solid-state power amplifier according to the present invention;
Detailed Description
The following further describes embodiments of the present invention with reference to the drawings. It should be noted that the description of the embodiments is provided to help understanding of the present invention, but the present invention is not limited thereto. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
As shown in fig. 1, a microwave solid-state power amplifier includes a box, a cover, a power output circuit, a coupling circuit, a matching circuit, and a detection circuit, wherein the power output circuit, the coupling circuit, the matching circuit, and the detection circuit are all disposed in the box, and the power output circuit includes a final power amplifier V1, a first capacitor C1, and an output isolator W1; the matching circuit comprises a fixed attenuator N1 and a matching microstrip line; after being amplified by a final power amplifier V1, the microwave signal is transmitted to an output isolator W1 through a first capacitor C1 and is output from an X02G output port, the other path of the microwave signal passes through a coupling circuit, the coupling circuit generates a coupling microwave signal, the coupling microwave signal enters a detection circuit through a fixed attenuator N1 and a matching microstrip line, and a detection level is generated.
In this embodiment, a coupling detection circuit capable of obtaining a stable and consistent detection level within a bandwidth of 600MHz is realized in an aerospace X-band 10W microwave solid-state power amplifier. A matching circuit is added between the coupling circuit and the detection circuit, so that the band adaptability of the whole circuit is improved, the consistency of the detection level in the working band of the microwave solid-state power amplifier is improved, and the fluctuation of the detection level along with the frequency is reduced; the fixed attenuator N1 can improve the interface standing wave between the coupling circuit and the detection circuit and improve the transmission capability of the coupling signal; a matching microstrip line (depending on the frequency) with a certain wavelength in the matching circuit can be used to tune the flatness of the coupled signal in a certain bandwidth, so as to improve the consistency of the detection level and reduce the fluctuation of the detection level with the frequency, for example: the matching microstrip line in the matching circuit adopts a 1/2 wavelength matching microstrip line, can be used for tuning the flatness of a coupling signal in a 600MHz bandwidth, and the actually measured detection level can be ensured within a range of +/-0.1V.
In one embodiment, the coupling circuit includes a microstrip coupler and a first resistor R1; the input end of the microstrip coupler is coupled with the output end of the first capacitor C1, the output end of the microstrip coupler is respectively connected with one end of the first resistor R1 and the input end of the fixed attenuator N1, and the other end of the first resistor R1 is grounded.
In one embodiment, the detector circuit includes a detector diode V2, a second resistor R2, a third resistor R3, a second capacitor C2, a third capacitor C3, and a fourth capacitor C4; the anode of the detection diode V2 is connected with the fixed attenuator N1 through a matching microstrip line, the cathode of the detection diode V is respectively connected with one end of a second capacitor C2 and one end of a third resistor R3, the other end of the second capacitor C2 is grounded, the other end of the third resistor R3 is used as a detection level port and is respectively connected with one end of the second resistor R2, one end of a third capacitor C3 and one end of a fourth capacitor C4, and the other end of the second resistor R2, the other end of the third capacitor C3 and the other end of the fourth capacitor C4 are grounded.
In one embodiment, the power output circuit, the coupling circuit, the matching circuit and the detector circuit are made of flexible substrates.
In this embodiment, the circuit is implemented by processing a microstrip circuit on a flexible substrate Rogers TMM 3.
In one embodiment, as shown in fig. 2 to 3, the box body is provided with two cavities, a base and a partition are arranged in the cavities, and the power output circuit, the coupling circuit, the matching circuit and the detection circuit are all arranged on the surface of the base and are separated by the partition; the power output circuit, the coupling circuit and the fixed attenuator N1 are arranged in the same cavity; the matching microstrip line and the detection circuit are arranged in the other cavity; the partition fence is further arranged between the two cavities, and a wire groove is formed in the bottom of the partition fence.
In the embodiment, the output power of the microwave solid-state power amplifier is 10W, and strong electromagnetic signal interference exists in a cavity where the power output circuit is located; the coupling circuit and the detection circuit are separated by different cavities, so that the detection circuit is not easily interfered by an electromagnetic field; the 1/2 wavelength matching microstrip line of the matching circuit and the detection circuit are in the same cavity and separated from the other cavity by a barrier, so that the shielding effect is achieved, and the detection circuit is not interfered by electromagnetic signals in the other cavity; and a groove is formed at the bottom of the partition for connecting a fixed attenuator N1 of the matching circuit and a 1/2 wavelength matching microstrip line part, and the connection adopts a gold strip mode.
In one embodiment, the box body and the cover body are both made of aluminum alloy materials.
In this embodiment, box body and lid are aluminum alloy material, possess better electromagnetic shielding performance.
In one embodiment, as shown in fig. 4, a boss is formed on the cover body and is connected with the box body in a shape fitting manner.
In this embodiment, box body upper portion is equipped with the lid, and the lid processes the boss according to the shape of cavity, can increase the shielding effect between the cavity after the box body closes the lid.
The embodiments of the present invention have been described in detail with reference to the accompanying drawings, but the present invention is not limited to the described embodiments. It will be apparent to those skilled in the art that various changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, and the scope of protection is still within the scope of the invention.
Claims (5)
1. The utility model provides a solid-state power amplifier of microwave, includes box body, lid, power output circuit, coupling circuit, matching circuit and detection circuit all set up in the box body, its characterized in that: the power output circuit comprises a final power amplifier, a first capacitor and an output isolator; the matching circuit comprises a fixed attenuator and a matching microstrip line; after being amplified by the final power amplifier, the microwave signal is transmitted to the output isolator through one path of the first capacitor and is output, the other path of the microwave signal passes through the coupling circuit, and the coupling circuit generates a coupling microwave signal which enters the detection circuit through the fixed attenuator and the matching microstrip line to generate a detection level; the detection circuit comprises a detection diode, a second resistor, a third resistor, a second capacitor, a third capacitor and a fourth capacitor; the anode of the detection diode is connected with the fixed attenuator through the matching microstrip line, the cathode of the detection diode is respectively connected with one end of the second capacitor and one end of the third resistor, the other end of the second capacitor is grounded, the other end of the third resistor is used as a detection level port and is respectively connected with one end of the second resistor, one end of the third capacitor and one end of the fourth capacitor, and the other ends of the second resistor, the third capacitor and the fourth capacitor are grounded; the power output circuit, the coupling circuit, the matching circuit and the detection circuit are all arranged on the surface of the base and are separated by the barriers; the power output circuit, the coupling circuit and the fixed attenuator are arranged in the same cavity; the matching microstrip line and the detection circuit are arranged in the other cavity; the partition fence is further arranged between the two cavities, and a wire groove is formed in the bottom of the partition fence.
2. A microwave solid-state power amplifier according to claim 1, wherein: the coupling circuit comprises a microstrip coupler and a first resistor; the input end of the microstrip coupler is coupled with the output end of the first capacitor, the output end of the microstrip coupler is respectively connected with one end of the first resistor and the input end of the fixed attenuator, and the other end of the first resistor is grounded.
3. A microwave solid-state power amplifier according to claim 1, wherein: the power output circuit, the coupling circuit, the matching circuit and the detection circuit are made of flexible substrates.
4. A microwave solid-state power amplifier according to claim 1, wherein: the box body and the cover body are made of aluminum alloy materials.
5. A microwave solid-state power amplifier according to claim 4, wherein: the cover body is provided with a boss which is connected with the box body in a shape-adaptive manner.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110743088.6A CN113381701B (en) | 2021-06-30 | 2021-06-30 | Microwave solid-state power amplifier |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110743088.6A CN113381701B (en) | 2021-06-30 | 2021-06-30 | Microwave solid-state power amplifier |
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| Publication Number | Publication Date |
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| CN113381701A CN113381701A (en) | 2021-09-10 |
| CN113381701B true CN113381701B (en) | 2023-03-24 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102611396A (en) * | 2011-12-22 | 2012-07-25 | 中国科学院空间科学与应用研究中心 | Microwave solid-state power amplifier |
| CN106411365A (en) * | 2016-12-20 | 2017-02-15 | 中国电子科技集团公司第三十八研究所 | Microwave signal coupling apparatus |
| CN107248848A (en) * | 2017-06-08 | 2017-10-13 | 中国电子科技集团公司第五十四研究所 | A kind of EHF frequency ranges High Linear solid-state high power amplifier device |
| CN111697931A (en) * | 2020-05-26 | 2020-09-22 | 中国电子科技集团公司第五十五研究所 | Pre-matched compact coupling detection circuit chip integrated with GaN power amplifier |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7265619B2 (en) * | 2005-07-06 | 2007-09-04 | Raytheon Company | Two stage microwave Class E power amplifier |
| US7652532B2 (en) * | 2005-09-06 | 2010-01-26 | The Regents Of The University Of California | Correlation method for monitoring power amplifier |
| CN204065231U (en) * | 2014-06-12 | 2014-12-31 | 单家芳 | A kind of microwave power detection circuit |
| CN106571779B (en) * | 2016-10-31 | 2019-11-01 | 成都九洲迪飞科技有限责任公司 | Energy-saving adapter power amplifier |
| CN212572485U (en) * | 2020-07-06 | 2021-02-19 | 陕西博亚微波有限公司 | Novel broadband audio detection assembly |
| CN112034224B (en) * | 2020-08-25 | 2023-07-14 | 中国电子科技集团公司第三十六研究所 | Coupling detector |
| CN112187201A (en) * | 2020-10-22 | 2021-01-05 | 上海航天电子通讯设备研究所 | Temperature compensation gain closed-loop circuit of satellite-borne gallium nitride solid-state power amplifier |
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2021
- 2021-06-30 CN CN202110743088.6A patent/CN113381701B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102611396A (en) * | 2011-12-22 | 2012-07-25 | 中国科学院空间科学与应用研究中心 | Microwave solid-state power amplifier |
| CN106411365A (en) * | 2016-12-20 | 2017-02-15 | 中国电子科技集团公司第三十八研究所 | Microwave signal coupling apparatus |
| CN107248848A (en) * | 2017-06-08 | 2017-10-13 | 中国电子科技集团公司第五十四研究所 | A kind of EHF frequency ranges High Linear solid-state high power amplifier device |
| CN111697931A (en) * | 2020-05-26 | 2020-09-22 | 中国电子科技集团公司第五十五研究所 | Pre-matched compact coupling detection circuit chip integrated with GaN power amplifier |
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| CN113381701A (en) | 2021-09-10 |
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