CN113380963A - Silicon-based OLED micro-display device and manufacturing process thereof - Google Patents
Silicon-based OLED micro-display device and manufacturing process thereof Download PDFInfo
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- CN113380963A CN113380963A CN202110646407.1A CN202110646407A CN113380963A CN 113380963 A CN113380963 A CN 113380963A CN 202110646407 A CN202110646407 A CN 202110646407A CN 113380963 A CN113380963 A CN 113380963A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/50—OLEDs integrated with light modulating elements, e.g. with electrochromic elements, photochromic elements or liquid crystal elements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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Abstract
The invention discloses a silicon-based OLED micro-display device, which mainly adopts a patterned micro-lens array as a part of an OLED device packaging layer or prepares the micro-lens array on one side far away from a light emitting layer so as to achieve the purpose of reducing the surface reflectivity of a silicon-based OLED micro-display screen. In the existing manufacturing process of the silicon-based OLED micro display screen, only one processing process is added, and the method has the characteristics of simple process, capability of obviously improving the performance and the like.
Description
Technical Field
The invention relates to the field of organic electroluminescent devices, in particular to a micro-lens technology of a silicon-based micro-display screen.
Background
The OLED (Organic Light Emitting diode) has many advantages of self-luminescence, low power consumption, full solid state, wide viewing angle, high color gamut, short response time, etc., is widely applied to the display screen manufacturing industry, and is considered as a next generation display technology with great potential. The silicon-based OLED micro-display is a novel display technology for manufacturing an active light-emitting OLED on a silicon-based CMOS driving circuit substrate, and is called as a black horse of a next generation display technology. The silicon-based OLED micro-display has the advantages of small size, light weight, high resolution, high brightness, high precision and the like, can be widely applied to helmets, gun sights and night vision instruments, and has very wide application prospect in near-to-eye displays such as AR/VR and the like.
The conventional silicon-based OLED micro-display device mainly comprises a silicon-based CMOS drive circuit, an OLED light-emitting structure, a thin film packaging structure, cover plate glass and the like; wherein the OLED light emitting structure comprises an anode metal material, an OLED light emitting material and a cathode metal material; the anode metal and the cathode metal provide driving voltage required by light emission for the OLED light-emitting material, and light emitted by the OLED light-emitting material penetrates through the cathode, the film package and the cover plate glass to complete the display effect. As a top emission device, the cathode is required to be a transparent material, and the cathode provides a driving voltage for the OLED light emitting device, and in order to ensure uniformity of light emission of the OLED, the resistance of the cathode material is required to be as small as possible. The cathode materials commonly used at present comprise Ag and Mg/Ag alloy, and the Ag or Mg/Ag alloy is a transparent material with high transmittance when the thickness of the Ag or Mg/Ag alloy is in a nanometer level. However, Ag or Mg/Ag alloy, as a metal material, still has partial metal characteristics, i.e., high reflectivity. Therefore, the silicon-based OLED micro-display device with the structure can show certain reflection characteristic under a strong ambient light atmosphere, so that the display effect of the silicon-based OLED micro-display device is influenced.
Light emitted by the light emitting layer of the OLED can generate surface plasma modal loss, waveguide modal loss, low-basis-intensity modal loss, metal loss and the like after being absorbed and reflected by multiple layers of organic materials, and various losses generated by different layers of light emitted by the OLED light emitting layer can cause the reduction of light emitting rate, particularly single-color products, which is more serious. In view of the above problems, there is a need to provide a new method for manufacturing a silicon-based microdisplay to solve the above problems.
Disclosure of Invention
The invention aims to solve the technical problem of realizing a silicon-based OLED micro-display device and a manufacturing process thereof, so as to reduce the probability of total reflection of light and reduce the light absorption loss caused by a waveguide effect, thereby improving the display quality of an OLED display screen.
In order to achieve the purpose, the invention adopts the technical scheme that: a silicon-based OLED micro-display device comprises a silicon-based CMOS drive circuit substrate, a light emitting layer, a film packaging layer and cover plate glass, wherein the light emitting layer, the film packaging layer and the cover plate glass are sequentially manufactured on the silicon-based CMOS drive circuit substrate, and a micro-lens array layer is further arranged and is located on one side, far away from the light emitting layer, of the film packaging layer or is located in the film packaging layer and serves as a part of the film packaging layer.
A planarization layer and an OCR layer are further arranged between the film packaging layer and the cover plate glass, the OCR layer contacts the cover plate glass, and a common cathode is arranged between the film packaging layer and the light emitting layer.
The refractive index n of the micro lens array is between 1.1 and 1.4.
The material of the micro-lens array layer is SiO, SiN, magnesium fluoride, titanium dioxide and Al2O3One or more combinations thereof.
The micro-lens array layer is of a single-layer film structure or is formed by stacking multiple film structures (the micro-lens array layer is made of single-layer or multiple layers of antireflection materials).
The thickness of the micro lens array layer is between 50nm and 200 nm.
A manufacturing process of the silicon-based OLED micro-display device comprises the following steps:
step 1, cleaning a silicon-based CMOS drive circuit substrate and drying;
step 2, evaporating an organic material and a cathode metal material on the silicon-based CMOS drive circuit substrate;
3, transferring the substrate coated with the organic material and the cathode metal material to a film packaging device for organic and inorganic film packaging;
step 4, preparing a micro-lens array layer on the surface of the film packaging material;
step 5, cover plate glass packaging;
and 6, welding a circuit.
According to the invention, the micro-lens structure layer is added on the thin film packaging layer of the device or on the side far away from the light emitting layer, so that the waveguide effect of the silicon-based OLED micro-display screen is reduced, and the display quality is improved.
Drawings
The following is a brief description of the contents of each figure in the description of the present invention:
FIG. 1 is a schematic diagram of a layer structure of a silicon-based OLED micro-display device.
Detailed Description
The following description of the embodiments with reference to the drawings is provided to describe the embodiments of the present invention, and the embodiments of the present invention, such as the shapes and configurations of the components, the mutual positions and connection relationships of the components, the functions and working principles of the components, the manufacturing processes and the operation and use methods, etc., will be further described in detail to help those skilled in the art to more completely, accurately and deeply understand the inventive concept and technical solutions of the present invention.
As shown in fig. 1, the silicon-based OLED micro-display device includes a silicon-based CMOS driving circuit substrate, and a light emitting layer, a common cathode, a thin film encapsulation layer, a planarization layer, an OCR layer, and a cover glass sequentially fabricated on the silicon-based CMOS driving circuit substrate, and the waveguide effect is solved by disposing a micro-lens array layer, which may adopt 2 schemes;
in embodiment 1, the microlens array layer is located on the side of the thin film encapsulation layer away from the light emitting layer, that is, the microlens array layer is located between the thin film encapsulation layer and the planarization layer;
in example 2, the microlens array layer is located in the film encapsulation layer, so that the microlens array layer is a part of the film encapsulation layer, and for example, the microlens array layer can be sandwiched by two film encapsulation layers.
In order to achieve the purpose of reducing the surface reflectivity of the silicon-based OLED micro display screen, the parameters of the micro lens array layer are required as follows:
the n value of the micro-lens array layer is between 1.1 and 1.4;
the material of the micro-lens array layer is SiO, SiN, magnesium fluoride, titanium dioxide and Al2O3One or more combinations of (a);
the micro lens array layer is of a single-layer film structure or is formed by stacking a plurality of film structures;
the thickness of the micro lens array layer is between 50nm and 200 nm;
therefore, only one processing process is added in the existing manufacturing process of the silicon-based OLED micro display screen, and the method has the characteristics of simple process, addition of a micro lens array layer, solution of waveguide effect, obvious improvement of performance and the like.
The manufacturing process of the silicon-based OLED micro-display device comprises the following steps:
step 1, cleaning a silicon-based CMOS drive circuit substrate and drying;
step 2, evaporating an organic material and a cathode metal material on the silicon-based CMOS drive circuit substrate;
3, transferring the substrate coated with the organic material and the cathode metal material to a film packaging device for organic and inorganic film packaging;
step 4, preparing a micro-lens array layer on the surface of the film packaging material by adopting a CVD method;
step 5, cover plate glass packaging;
and 6, welding a circuit.
The invention has been described above with reference to the accompanying drawings, it is obvious that the invention is not limited to the specific implementation in the above-described manner, and it is within the scope of the invention to apply the inventive concept and solution to other applications without substantial modification.
Claims (7)
1. The utility model provides a silicon-based OLED micro-display device, includes silicon-based CMOS drive circuit substrate to and make luminescent layer, film encapsulation layer, the apron glass on silicon-based CMOS drive circuit substrate in proper order, its characterized in that: the light-emitting layer is arranged on the film packaging layer, and the micro lens array layer is arranged on one side, away from the light-emitting layer, of the film packaging layer or is arranged in the film packaging layer and used as a part of the film packaging layer.
2. A silicon-based OLED micro-display device according to claim 1, wherein: a planarization layer and an OCR layer are further arranged between the film packaging layer and the cover plate glass, the OCR layer contacts the cover plate glass, and a common cathode is arranged between the film packaging layer and the light emitting layer.
3. A silicon-based OLED micro-display device according to claim 1 or 2, wherein: the refractive index n of the micro lens array is between 1.1 and 1.4.
4. A silicon-based OLED micro-display device according to claim 3, wherein: the material of the micro-lens array layer is SiO, SiN, magnesium fluoride, titanium dioxide and Al2O3One or more combinations thereof.
5. A silicon-based OLED micro-display device according to claim 4, wherein: the micro-lens array layer is of a single-layer film structure or is formed by stacking multiple film structures.
6. A silicon-based OLED micro-display device according to claim 5, wherein: the thickness of the micro lens array layer is between 50nm and 200 nm.
7. A process of fabricating a silicon-based OLED micro-display device as claimed in any of claims 1 to 6, wherein:
step 1, cleaning a silicon-based CMOS drive circuit substrate and drying;
step 2, evaporating an organic material and a cathode metal material on the silicon-based CMOS drive circuit substrate;
3, transferring the substrate coated with the organic material and the cathode metal material to a film packaging device for organic and inorganic film packaging;
step 4, preparing a micro-lens array layer on the surface of the film packaging material;
step 5, cover plate glass packaging;
and 6, welding a circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202110646407.1A CN113380963A (en) | 2021-06-10 | 2021-06-10 | Silicon-based OLED micro-display device and manufacturing process thereof |
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| CN202110646407.1A CN113380963A (en) | 2021-06-10 | 2021-06-10 | Silicon-based OLED micro-display device and manufacturing process thereof |
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- 2021-06-10 CN CN202110646407.1A patent/CN113380963A/en active Pending
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| CN205194746U (en) * | 2015-12-15 | 2016-04-27 | 昆山工研院新型平板显示技术中心有限公司 | Organic light -emitting diode device and have its display panel |
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Application publication date: 20210910 |