CN113380677A - 一种带水汽蒸发系统的工艺腔室 - Google Patents
一种带水汽蒸发系统的工艺腔室 Download PDFInfo
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- CN113380677A CN113380677A CN202110799500.6A CN202110799500A CN113380677A CN 113380677 A CN113380677 A CN 113380677A CN 202110799500 A CN202110799500 A CN 202110799500A CN 113380677 A CN113380677 A CN 113380677A
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 title claims abstract description 143
- 238000000034 method Methods 0.000 title claims abstract description 127
- 238000001704 evaporation Methods 0.000 title claims abstract description 32
- 230000008020 evaporation Effects 0.000 title claims abstract description 32
- 238000007789 sealing Methods 0.000 claims abstract description 21
- 239000007789 gas Substances 0.000 claims description 19
- 238000009413 insulation Methods 0.000 claims description 13
- 239000012159 carrier gas Substances 0.000 claims description 10
- 235000012431 wafers Nutrition 0.000 claims description 9
- 238000009834 vaporization Methods 0.000 claims description 3
- 230000008016 vaporization Effects 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 claims 8
- 125000006850 spacer group Chemical group 0.000 claims 2
- 238000004891 communication Methods 0.000 claims 1
- 230000026676 system process Effects 0.000 claims 1
- 239000000126 substance Substances 0.000 abstract description 12
- 238000009792 diffusion process Methods 0.000 abstract description 11
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052796 boron Inorganic materials 0.000 abstract description 8
- 238000004140 cleaning Methods 0.000 abstract description 8
- 230000002035 prolonged effect Effects 0.000 abstract description 5
- 238000006386 neutralization reaction Methods 0.000 abstract description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 230000001502 supplementing effect Effects 0.000 description 4
- 229910015845 BBr3 Inorganic materials 0.000 description 3
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Substances BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000002940 repellent Effects 0.000 description 1
- 239000005871 repellent Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000011345 viscous material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202110799500.6A CN113380677A (zh) | 2021-07-15 | 2021-07-15 | 一种带水汽蒸发系统的工艺腔室 |
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CN202110799500.6A CN113380677A (zh) | 2021-07-15 | 2021-07-15 | 一种带水汽蒸发系统的工艺腔室 |
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CN113380677A true CN113380677A (zh) | 2021-09-10 |
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CN202110799500.6A Pending CN113380677A (zh) | 2021-07-15 | 2021-07-15 | 一种带水汽蒸发系统的工艺腔室 |
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CN (1) | CN113380677A (zh) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0424920A (ja) * | 1990-05-15 | 1992-01-28 | Tokyo Electron Ltd | 湿式熱酸化装置及び湿式熱酸化方法 |
CN103215649A (zh) * | 2013-04-08 | 2013-07-24 | 英利能源(中国)有限公司 | 硼扩散炉管的清洁方法及其清洁设备 |
CN111986993A (zh) * | 2020-09-04 | 2020-11-24 | 麦斯克电子材料有限公司 | 一种硅片热氧化湿氧工艺 |
CN213519887U (zh) * | 2020-12-02 | 2021-06-22 | 江苏龙恒新能源有限公司 | 一种提高低压扩散方阻均匀性的装置 |
CN215731601U (zh) * | 2021-07-15 | 2022-02-01 | 赛瑞达智能电子装备(无锡)股份有限公司 | 一种带水汽蒸发系统的工艺腔室 |
-
2021
- 2021-07-15 CN CN202110799500.6A patent/CN113380677A/zh active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0424920A (ja) * | 1990-05-15 | 1992-01-28 | Tokyo Electron Ltd | 湿式熱酸化装置及び湿式熱酸化方法 |
CN103215649A (zh) * | 2013-04-08 | 2013-07-24 | 英利能源(中国)有限公司 | 硼扩散炉管的清洁方法及其清洁设备 |
CN111986993A (zh) * | 2020-09-04 | 2020-11-24 | 麦斯克电子材料有限公司 | 一种硅片热氧化湿氧工艺 |
CN213519887U (zh) * | 2020-12-02 | 2021-06-22 | 江苏龙恒新能源有限公司 | 一种提高低压扩散方阻均匀性的装置 |
CN215731601U (zh) * | 2021-07-15 | 2022-02-01 | 赛瑞达智能电子装备(无锡)股份有限公司 | 一种带水汽蒸发系统的工艺腔室 |
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Effective date of registration: 20211129 Address after: 214000 three comma maker spaces in the east of 1 / F, building 6, Ruiyun, No. 99, Furong Zhongsan Road, Xishan District, Wuxi City, Jiangsu Province Applicant after: Sairuida intelligent electronic equipment (Wuxi) Co.,Ltd. Address before: 826 Huadong Road, high tech Zone, Qingdao, Shandong Applicant before: QINGDAO SUNRED ELECTRONIC TECHNOLOGY Co.,Ltd. |
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CB02 | Change of applicant information |
Address after: 214000 workshop and office space on the south side of the first floor of Plant No. 4, precision machinery industrial park, Xishan District, Wuxi City, Jiangsu Province Applicant after: Sairuida Intelligent Electronic Equipment (Wuxi) Co.,Ltd. Address before: 214000 three comma maker spaces in the east of 1 / F, building 6, Ruiyun, No. 99, Furong Zhongsan Road, Xishan District, Wuxi City, Jiangsu Province Applicant before: Sairuida intelligent electronic equipment (Wuxi) Co.,Ltd. |
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