CN113380276A

CN113380276A - Multi-layer PZT micro-actuator with polarized but passive PZT confinement layer

Info

Publication number: CN113380276A
Application number: CN202110493789.9A
Authority: CN
Inventors: 余坤祺; D·格莱斯; 张泷; P·哈恩
Original assignee: Magnecomp Corp
Current assignee: Magnecomp Corp
Priority date: 2016-08-03
Filing date: 2017-08-03
Publication date: 2021-09-10
Anticipated expiration: 2037-08-03
Also published as: JP7402264B2; CN107689231B; JP2018050033A; JP2022095772A; JP7051322B2; CN107689231A; CN113380276B

Abstract

A multi-layer piezoelectric microactuator assembly has at least one polarized and active piezoelectric layer and one polarized and inactive piezoelectric layer. The poled but passive layer acts as a constraining layer against expansion or contraction of the first piezoelectric layer, thereby reducing or eliminating bending of the assembly mounted in the environment, thereby increasing the effective stroke length of the assembly. Polarizing only a single layer induces stress in the device; thus, poling both piezoelectric layers even if only one layer would be active in use reduces stress in the device and thus increases reliability.

Description

Multi-layer PZT micro-actuator with polarized but passive PZT confinement layer

The application is a divisional application of Chinese patent application with application date of 2017, 08 and 03 months, application number of 201710654540.5, entitled "multilayer PZT micro-actuator with polarized but passive PZT constraining layer

Cross Reference to Related Applications

This application is a continuation-in-part application of U.S. patent application No.15/055,618 filed on 28/2/2016, which is a continuation of U.S. patent application No.14/672,122 (now patent No.9,330,698) filed on 28/3/2015, which is a continuation-in-part application of U.S. patent application No.14/214,525 (now patent No.9,117,468) filed on 14/3/2014, which claims priority to U.S. provisional patent application No. 61/802,972 filed on 18/3/2013 and U.S. provisional patent application No.61/877,957 filed on 14/9/2013. Application No.14/672,122 is also a continuation-in-part application of U.S. patent application No.14/566,666 (now patent No.9,330,694) filed on 10/12/2014, which claims the benefit of U.S. provisional patent application No.62/061,074 filed on 17/10/2014. Application No.14/672,122 also claims the benefit of U.S. provisional patent application No. 62/085,471 filed on 28/11/2014. All of these applications are incorporated by reference as if fully set forth herein.

Technical Field

The present invention relates to the field of suspensions for hard disk drives. More particularly, the present invention relates to the field of multi-layer piezoelectric microactuators having one or more active piezoelectric constraining layers for use in dual-stage actuated suspensions.

Background

Magnetic hard disk drives and other types of rotating media drives, such as optical disk drives, are well known. FIG. 1 is an oblique view of an exemplary prior art hard disk drive and suspension to which the present invention is applicable. The prior art disk drive unit 100 includes a rotating magnetic disk 101, the rotating magnetic disk 101 containing a pattern of magnetic 1's and 0's that constitute the data stored on the disk drive. The magnetic disk is driven by a drive motor (not shown). The disk drive unit 100 further includes a disk drive suspension 105, and a head slider (not shown) is mounted to the disk drive suspension 105 near a distal end of the load beam 107. The "proximal" end of the suspension or load beam is the end that is supported, i.e., the end closest to the base plate 12 that is forged or otherwise mounted to the actuator arm. The "distal" end of the suspension or load beam is the end opposite the proximal end, i.e., the "distal" end is the cantilevered end.

Suspension 105 is coupled to actuator arm 103, and actuator arm 103 is in turn coupled to voice coil motor 112, and voice coil motor 112 moves suspension 105 arcuately to position the head slider on the correct data track on data disk 101. The head slider is carried on a gimbal (gimbal) that allows the slider to pitch and roll so that it follows the appropriate data tracks on the rotating disk, allowing for such variations as disk vibrations, inertial events such as bumps, and irregularities in the disk surface.

Single-stage actuated disk drive suspensions and dual-stage actuated (DSA) suspensions are known. In a single stage actuation suspension, only the voice coil motor 112 moves the suspension 105.

In DSA suspensions, such as the DAS suspension in U.S. Pat. No.7,459,835 to Mei et al, and many others, at least one additional microactuator is located on the suspension in addition to the voice coil motor 112 which moves the entire suspension in order to effect micro-motion of the head slider and maintain it in proper alignment over the data tracks of the rotating disk. Micro-actuators provide much finer control and much greater bandwidth of the servo control loop than voice coil motors acting alone, which only achieve relatively coarse movement of the suspension and hence the head slider. Piezoelectric elements, sometimes referred to as PZT's, are commonly used as microactuator motors, although other types of microactuator motors are possible.

Fig. 2 is a top plan view of the prior art suspension 105 of fig. 1. The two PZT micro-actuators 14 are adhered to a suspension 105 formed on a micro-actuator mount 18 within the substrate 12 such that the PZT spans respective gaps in the substrate 12. The microactuator 14 is attached to a mounting block 18 at each end of the microactuator by epoxy 16. The positive and negative electrical connections may be made from the PZT to a flexible circuit trace (winding trace) of the suspension and/or to the board by a variety of techniques. When the micro-actuator 14 is actuated, it expands or contracts and thereby changes the length of the gap between the mounting brackets, thereby creating a micro-motion of the read/write head mounted to the distal end of the suspension 105.

Figure 3 is a side cross-sectional view of a prior art PZT micro-actuator and the mounting of figure 2. The microactuator 14 comprises the PZT element 20 itself and a top metal layer 26 and a bottom metal layer 28 on the PZT defining electrodes for actuating the PZT. The PZT 14 is mounted across a gap on both its left and right sides by epoxy or solder 16, as shown.

In DSA suspensions, it is often necessary to obtain a high stroke distance from the PZT, or simply "stroke length", per unit input voltage.

Many DSA suspension designs in the past have mounted PZT on the mounting plate. In this design, the linear movement of the PZT is amplified by the length of the arm between the center of rotation of the PZT and the read/write transducer head. The small linear motion of the PZT thus results in a relatively large radial motion of the read/write head.

Other suspension designs mount the PZT at or near the gimbal. One example of a gimbal mounted PZT is the DSA suspension shown in patent No.8,879,210 assigned to the assignee of the present invention. In gimbal mounted DSA suspensions ("GSA" suspensions), it is particularly important to achieve high stroke lengths because those designs have little to no arm length as between the PZT and the read/write transducer head. For shorter arm lengths, the resultant motion of the read/write head is correspondingly smaller. Therefore, achieving large stroke lengths is particularly important in GSA designs.

Disclosure of Invention

The inventors of the present application have identified the source of the lost PZT stroke length in suspensions having PZT micro-actuators mounted thereon according to the prior art, and have developed a PZT micro-actuator structure and method of producing the same that eliminates the source of the lost stroke length.

Figure 4A is a cross-sectional side view of a PZT micro-actuator 14 mounted in a suspension as the PZT is actuated by applying a drive voltage thereto to expand the PZT, according to prior art figure 2. Since the bottom layer 22 of PZT is partially constrained by being bonded to the suspension 18 on which it is mounted, the bottom layer 22 does not expand as much in the linear direction as the top layer 24. Since the top layer 24 is much more extensive than the bottom layer 22, the PZT 14 bends downward and assumes a slightly convex shape when viewed from the top. The resultant loss in linear stroke length is shown in the figure as δ 1.

Figure 4B shows the PZT micro-actuator 14 of figure 4A when the PZT is actuated by applying a drive voltage thereto. Since the bottom layer 22 of PZT is partially constrained by being bonded to the suspension 18 on which it is mounted, the bottom layer 22 does not contract as much in the linear direction as the top layer 24. Since the top layer 24 contracts more than the bottom layer 22, the PZT 14 bends upward and assumes a slightly concave shape when viewed from the top. The resultant loss in linear stroke length is shown in the figure as δ 2.

Thus, while PZT expands and contracts purely linearly when actuation is required, in conventional installations PZT experiences either upward or downward bending, which results in a loss of stroke length.

Fig. 5 is a graph and associated equations for the magnitude of the effective linear stroke due to the increase or loss due to bending of the PZT. When the beam is bent upwards as shown in fig. 4A, the bottom cusp will have a positive displacement δ in the x-direction when the bending angle is small.

Fig. 6 is a graph of stroke loss due to bending for bend angles of three different thicknesses of PZT. As shown in the figure, for PZT having a length of 1.50mm and a thickness of 45 μm, when the bending angle is less than 5 degrees, the bending causes a positive x displacement δ. For this amount of bending, it can also be seen that a thicker beam produces a greater x-displacement than a thinner beam. Likewise, when the PZT contracts under the applied voltage, the right half of the PZT bends downward and the bottom end of the PZT that is bonded to the suspension will experience a negative x-displacement δ. In other words, in conventional mounting of PZT to the suspension, the component δ of the linear displacement due to bending is in the opposite direction to the actuation of PZT. It may therefore be desirable to reduce or eliminate the delta, or even eliminate the sign of the delta, so that the net result is that the total amount of linear expansion or contraction is actually increased.

The present invention is a PZT element having one or more stiffness constraining layers or elements bonded to at least one side or surface of the PZT opposite the side or surface on which it is mounted to the suspension to reduce, eliminate, bend the PZT or change the direction of bending of the PZT or otherwise control the bending of the PZT when it is actuated. The counterintuitive result is that even with PZT having added thereto a rigid layer that at least nominally inhibits expansion and contraction of the PZT, the effective linear stroke distance achieved is actually increased. A PZT with suppression layer according to the present invention can be used as a micro-actuator in a hard disk drive suspension, although it can be used in other applications as well.

In a preferred embodiment, the function of the inhibiting layer is to actually change the direction of the bending. Therefore, for PZT bonded to the suspension on its bottom surface, the presence of the suppression layer has the following effects: when the piezoelectric element is actuated by a voltage causing the piezoelectric element to expand, the piezoelectric element bends in a direction causing the top surface to become a purely concave shape; and when the piezoelectric element is actuated by a voltage causing the piezoelectric element to contract, the piezoelectric element bends in a direction causing the top surface to become a purely convex shape. This effect thus actually increases the effective linear expansion in the expansion mode, and increases the effective linear contraction in the contraction mode. The presence of the inhibiting layer thus effectively increases the effective stroke length.

PZT, together with its constraining layer, can be fabricated by a variety of techniques including laminating the constraining layer to an existing PZT element, or one of the PZT element and constraining layer can be formed on top of the other by an additive process. Such an additive process may include depositing thin film PZT on a substrate such as Stainless Steel (SST). The constraining layer may be stainless steel, silicon, ceramic (such as a substantially unpolarized (unactivated) ceramic material or other ceramic material that is the same as the ceramic material comprising the PZT element), or another relatively rigid material. If the constraining layer is non-conductive, one or more electrical pathways comprising posts of conductive material may be formed through the constraining layer to carry actuation voltages or ground potentials from the surface of the micro-actuator to the inside of the PZT element.

The constraining layer may be larger (have a larger surface area) than the PZT element, the same size as the PZT element, or smaller (have a smaller surface area) than the PZT element. In a preferred embodiment, the constraining layer is smaller than the PZT element, giving the micro-actuator a stepped structure in which the shelf of the step is not covered by the constraining layer and the spacer is in position to electrically connect to the PZT element. One benefit of this configuration of the shelf in which the electrical connection is made is that the completed assembly, including the electrical connection, has a low profile compared to the case where the constraining layer covers the entire PZT. The low profile is advantageous because it means that more hard drive platters and their suspensions can be stacked together within a given platter stack height, thereby increasing the data storage capacity within a given volume of the disk drive assembly.

Simulations have shown that a micro-actuator constructed in accordance with the present invention exhibits enhanced stroke sensitivity, and also exhibits reduced rocking mode gain and torsional mode gain. These are advantageous in increasing the head positioning control loop bandwidth, which translates into low data seek time and low susceptibility to vibration.

An additional benefit of adding a constraining layer or element to the PZT in accordance with the present invention is that in today's hard disk drives, the suspension and its components comprising the PZT are typically very thin. The micro-actuator used in present day DSA suspension designs, where the PZT is mounted to the mounting board, is about 150 μm thick. In a normally-flatbed mounted DSA suspension design, the PZT is even thinner, typically less than 100 μm thick. PZT materials are therefore very thin and brittle and can easily crack during the manufacturing/assembly process, including the process of manufacturing the PZT micro-actuator motor itself and the automatic pick and place operation during suspension assembly. It is expected that PZT in future generations of hard drives will be 75 μm thick or thinner, which will exacerbate the problem. It is expected that such thin layers of PZT are not only susceptible to damage during the manufacturing/assembly process, but also susceptible to cracking or breaking when the hard drive is subjected to shock (i.e., gravity). The additional rigid, resilient constraining layer according to the present invention provides additional strength and resilience to the PZT, thereby helping to prevent cracking or other mechanical failure of the PZT during manufacturing/assembly and during shock events.

In another aspect of the invention, the microactuator assembly is a multi-layer PZT device having a plurality of active PZT layers including one or more active PZT layers serving as a suppression layer tending to cancel the effect of the main active PZT layer.

The idea is counterintuitive that the total net stroke length can be increased by adding one or more layers that resist the motion of the primary PZT layer. It is further intuitive that the total net stroke length may be increased by adding one or more active layers that act actively in the opposite direction to the primary PZT layer. However, this is what the inventors have confirmed.

In another embodiment, the present invention is a multi-layer PZT micro-actuator assembly wherein the constraining layer comprises a poled but passive piezoelectric material. The inventors have found that poling only one layer of a multilayer device introduces a pulling force in the device that can make the device more susceptible to cracking and thus failure, as poling the piezoelectric material changes its dimensions. The reliability of the device is thus improved by polarising not only the primary or active PZT layer closest to the surface of the suspension assembly or other environment in which the assembly is incorporated, but also the passive layer facing away from the environment in which the assembly is incorporated.

Exemplary embodiments of the invention will be further described with reference to the accompanying drawings, wherein like reference numerals refer to like parts. The figures may not be drawn to scale and certain features may be shown in generalized or schematic form and identified by commercial designations in the interest of clarity and conciseness.

Drawings

FIG. 1 is a top perspective view of a prior art magnetic hard disk drive.

FIG. 2 is a top plan view of the suspension of the disk drive of FIG. 1.

Figure 3 is a side cross-sectional view of a prior art PZT micro-actuator and the mounting of figure 2.

Figure 4A is a side cross-sectional view of a PZT micro-actuator mounted in the suspension of figure 2 according to the prior art when a voltage is applied to the PZT to cause it to expand.

Figure 4B is a cross-sectional side view of a PZT micro-actuator mounted in the suspension of figure 2 according to the prior art when a voltage is applied to the PZT to cause it to contract.

Figure 5 is a graphical representation and associated equations for the magnitude of the linear stroke that is increased or lost due to bending of the PZT.

Figure 6 is a graph of stroke loss due to bending versus bend angle for three different thicknesses of PZT.

Figure 7 is a side cross-sectional view of PZT having a constraining layer bonded thereto in accordance with the present invention.

Figure 8A is a side cross-sectional view of the PZT micro-actuator of figure 8 when a voltage is applied to the PZT to cause it to expand.

Figure 8B is a cross-sectional side view of the PZT micro-actuator of figure 8 when a voltage is applied to the PZT to cause it to contract.

FIG. 9 is a graph showing the stroke length per unit input voltage (in nm/V) versus the thickness of the constraining layer for PZT having a thickness of 130 μm.

Figure 10 is a side view of PZT having a constraining layer bonded thereto in accordance with the present invention.

FIG. 11 is a graph of PZT thickness for the stroke length stack of PZT of FIG. 10, where the combined thickness of the PZT and suppression layers is held constant at 130 μm.

FIG. 12 is a graph of GDA stroke sensitivity versus constraining layer thickness for suspensions having a PZT with stainless steel constraining layers of different thicknesses.

Fig. 13(a) -13(H) show a manufacturing process by which a PZT having a constraining layer according to the present invention can be produced.

Fig. 14(a) and 14(B) are oblique views of a GSA suspension assembled with a thin film PZT micro-actuator motor according to the present invention.

FIG. 15 is a cross-sectional view of the microactuator region of FIG. 14(B) taken along section line B-B'.

Figure 16 is a graph of stroke sensitivity versus SST substrate thickness for the micro-actuator of figure 15 according to a simulation.

Fig. 17(a) -17(F) illustrate a process for manufacturing a thin film PZT structure having a stainless steel substrate according to the present invention.

Figure 18 is a top plan view of a thin film PZT structure having a silicon substrate in accordance with the present invention.

FIG. 19 is a side cross-sectional view of the thin film PZT structure of FIG. 18 taken along section line A-A'.

Fig. 20 is a graph of stroke sensitivity versus silicon substrate thickness for the micro-actuator of fig. 19 according to a simulation.

FIGS. 21(A) -21(E) illustrate a process for fabricating the thin film PZT structure of FIG. 18.

Figure 22 is a top plan view of a thin film PZT having a substrate and having lateral vias according to an embodiment of the present invention.

Figure 23 is a cross-sectional view of the micro-actuator of figure 22 taken along section line a-a'.

Figure 24 is a cross-sectional view of a PZT micro-actuator according to an additional embodiment of the present invention.

Figure 25 is an oblique view of a GSA suspension with a pair of the PZT micro-actuator of figure 24.

Fig. 26 is a cross-sectional view of the GSA suspension of fig. 25 taken along section line a-a'.

Figure 27 is a graph of PZT frequency response function for the suspension of figure 25 according to the simulation.

28(A) -28(J) illustrate an exemplary process for manufacturing the PZT micro-actuator assembly of FIG. 24.

Figure 29 is a side cross-sectional view of a multi-layer PZT micro-actuator assembly according to an additional embodiment of the invention, wherein the PZT is multi-layer PZT.

Figure 30 is a side cross-sectional view of a multi-layer PZT micro-actuator assembly according to an additional embodiment of the present invention with an extra thick electrode serving as a suppression layer.

Figure 31 is a cross-sectional view of an embodiment in which the constraining layer of the microactuator assembly includes one or more active PZT layers that tend to act in the opposite direction as the primary active PZT layer.

FIG. 32 illustrates the polarization of the microactuator assembly of FIG. 31, including the resultant polarization directions of the multiple layers of active PZT material.

Fig. 33 is an exploded view of the microactuator assembly of fig. 31 conceptually illustrating electrical connections.

FIG. 34 is a graph showing the stroke sensitivity (in nm/V) of a micro-actuator with one or more active suppression layers according to simulations for various structures.

Figure 35 is a cross-sectional view of another embodiment in which the microactuator assembly includes multiple active PZT layers and conceptually illustrates the poling process and the resulting poling direction.

FIG. 36 is a cross-sectional side view of a multi-layer PZT micro-actuator assembly according to another embodiment, wherein the PZT is a co-polarized multi-layer PZT and wherein the top layer is thicker than the bottom layer.

Figure 37 is a side cross-sectional view of the PZT micro-actuator assembly of figure 36 showing the assembly mounted in a suspension.

FIG. 38 is a side cross-sectional view of a multi-layer PZT micro-actuator assembly in accordance with another embodiment, where the PZT is a multi-layer PZT having three separate poles and the PZT is reverse polarized.

Figure 39 is a side cross-sectional view of the PZT micro-actuator assembly of figure 38 showing the assembly mounted in a suspension.

Figure 40 is a graph showing the stroke sensitivity of the PZT micro-actuator assembly of figures 37 and 39 compared to that of a standard single layer PZT as a function of the thickness of the PZT top layer according to the simulation.

Figure 41 is a side cross-sectional view of the PZT micro-actuator assembly of figure 36 showing the assembly mounted in a suspension according to an alternative assembly method.

Figure 42 is a cross-sectional side view of a PZT micro-actuator with a polarized but passive constraining layer according to another embodiment.

Figure 43 is a side cross-sectional view of the PZT micro-actuator assembly of figure 42 showing the assembly mounted in a suspension.

Detailed Description

Figure 7 is a side cross-sectional view of PZT microactuator assembly 114 with constraining layer 130 bonded thereto according to one embodiment of the present invention. Consistent with the orientation shown in the figures, the side of PZT that is bonded to the suspension will be referred to as bottom side 129 of PZT 114, and the side of PZT that is distal from the side of the suspension to which it is bonded will be referred to as top side 127. In accordance with the present invention, one or more constraining layers or elements 130 are bonded to the top side 127 of the microactuator PZT element 120. The constraining layer 130 preferably comprises a rigid and resilient material, such as stainless steel, and is preferably bonded directly to the top surface 127 of the PZT element 120, including its top electrode 126, or the SST material may itself serve as the top electrode, thus eliminating the need to separately metalize the top surface. The constraining layer 130 is sufficiently rigid to significantly reduce, eliminate, or even reverse the bending of the PZT when actuated. The SST layer 130 preferably has a layer 131 composed of gold or other contact metal in order to ensure a good electrical connection to the SST.

Alternatively, the constraining layer 130 can be a ceramic, such as an unactivated (ungrounded or unpolarized) layer formed from the same ceramic material as that forming the piezoelectric layer 120, except that the constraining layer is stainless steel, and can be integrated into the assembly by bonding or by deposition. The ceramic material is unpolarized meaning that it exhibits substantially less piezoelectric behavior, e.g., less than 10% piezoelectric behavior, than the polarized ceramic defining the piezoelectric layer 120. Such an assembly defining a bottom-up stack comprising electrodes/polarized PZT/electrodes/unpolarized PZT may be easier to manufacture than a stack of electrodes/PZT/electrodes/SST.

In the discussion that follows, the top electrode 126 and the bottom electrode 128 are sometimes omitted from the figures and from the discussion in order to simplify the discussion, it being understood that a PZT micro-actuator will almost always have at least some types of top and bottom electrodes.

A layer of copper or nickel may be deposited onto the SST layer 130 prior to application of the gold layer 131 in order to increase the adhesion of the gold to the SST, as discussed in U.S. patent No.8,395,866 to Schreiber et al, which is owned by the assignee of the present application and is incorporated herein by reference for its teaching of electroplating other metals onto stainless steel. Likewise, the

electrodes

126, 128 may comprise a combination of nickel and/or chromium and gold (NiCr/Au).

124-. In one illustrative embodiment according to the simulation, the thicknesses of the multiple layers are:

130 PZT 3μm

126、128、131 NiCr/Au 0.5μm

the thin film PZT had a length of 1.20mm, the PZT was bonded to have a width of 0.15mm at both ends, and the piezoelectric coefficient d31 was 250 μm/V. In some embodiments, the SST layer can be at least 12 microns thick to provide suitable support.

In the above example, the DSA suspension exhibited a stroke sensitivity of 26.1nm/V according to the simulation. In contrast, a 45 μm thick high volume PZT with the same geometry (d31 ═ 320 μm/V) would typically exhibit only a stroke sensitivity of 7.2 nm/V.

The thickness ratio of the SST layer to the PZT layer can be as high as 1:1, or even 1.25:1, or even higher. When the thickness ratio of the constraining layer to PZT reaches about 1:25, the stroke sensitivity improvement due to the constraining layer will start to be negative, indicating the thickness limitation of the PZT constraining layer.

Figure 8A is a cross-sectional side view of PZT micro-actuator 114 of figure 7 when a voltage is applied to the PZT to cause it to expand. The PZT stroke includes two vectors, one being the pure extension stroke δ e, and the other being the extension action δ 1 due to the constraining layer causing the right end of the PZT to bend upward rather than downward (as would be the case without the constraining layer). The total stroke length is δ e + δ 1. Thus, in the extended mode, the PZT assumes a slightly concave shape when viewed from the top, i.e., the PZT top surface assumes a slightly concave shape, which is in the opposite bending direction to that of the prior art PZT of FIG. 4. The bending according to the invention thus increases the effective stroke length, rather than reducing it.

FIG. 8B is a cross-sectional side view of the PZT microactuator of FIG. 7 when a voltage is applied to PZT 114 to cause it to contract. The PZT stroke includes two vectors, one being a pure contraction stroke- | δ c |, and the other being a contraction effect δ 2 caused by the constraining layer causing the right end of the PZT to bend downward rather than upward (as would occur without the constraining layer). The total stroke length is- [ δ c + δ 2 ]. Thus, in the collapsed mode, the PZT assumes a slightly convex shape when viewed from the top, i.e., the PZT top surface assumes a slightly convex shape, which is in the opposite bending direction to that of the prior art PZT of FIG. 4. The bending according to the invention thus increases the effective stroke length, rather than reducing it.

The addition of constraining layer 130 to PZT micro-actuator 114 has no incremental effect on the stroke length of other uninhibited and unbound PZT 114. However, when that PZT 114 is coupled to suspension 18 at its bottom end (as shown in FIG. 4), the constraining layer acts to actually slightly increase the stroke length. Stainless steel has a young's modulus of about 190-210 GPa. Preferably, the material used for the constraining layer has a Young's modulus greater than 50GPa, and more preferably greater than 100GPa, and still more preferably greater than 150 GPa.

FIG. 9 is a graph of stroke length per unit input voltage (in nm/V) versus constraining layer thickness for PZT 114 with a 130 μm thickness and a stainless steel constraining layer 130 bonded thereto, in accordance with simulations. The addition of SST suppression layers 20, 40 and 60 μm thick on the top surface of the PZT all resulted in an increase in the total stroke length. The addition of the constraining layer thus actually increases the total stroke length.

One can also keep the total combined thickness of the PZT and the constraining layer constant and determine the optimal thickness for the constraining layer. Figure 10 is a side view of the combined PZT and constraining layer bonded thereto in accordance with the present invention, where the total thickness is kept constant at 130 μm. Figure 11 is a graph of stroke length versus PZT thickness for the PZT of figure 10, where the combined thickness of the PZT and the suppression layer is held constant at 130 μm. Without the constraining layer, 130 μm thick PZT had a stroke length of about 14.5 nm/V. With a constraining layer 130 thickness of 65 μm and a PZT thickness of 65 μm, the PZT has a stroke length of about 20 nm/V. The addition of the constraining layer thus actually increases the effective stroke length by about 35%.

Figure 12 is a graph of GDA stroke sensitivity versus constraining layer thickness for a GDA suspension with the microactuator of figure 7 for a 45 μm thick PZT element with a stainless steel constraining layer of varying thickness on top, according to a simulation. As seen in the graph, a 30 μm thick constraining layer increases the GDA stroke sensitivity from 9nm/V to slightly over 14.5 μm, which indicates an increase in stroke length of more than 50%.

Figures 13(a) -13(H) illustrate a fabrication process by which a PZT micro-actuator assembly with a constraining layer according to the present invention can be produced. This method is an example of an additive method in which the PZT material is deposited onto a substrate that will be the constraining layer. The process starts with a first substrate 140 as shown in fig. 13 (a). In fig. 13(B), a first UV/thermal tape 142 is applied to the substrate. In figure 13(C), a preformed SST layer 130 is added to the tape. In fig. 13(D), an electrode layer 126 is deposited onto the SST, for example by sputtering or other known deposition process. In fig. 13(E), a PZT layer 120 is formed on the electrode layer by a sol-gel method or other known methods. In fig. 13(F), a second electrode 128 is deposited, for example by sputtering, onto the exposed side of the PZT. In fig. 13(G), the SST layer 130 is separated from the tape and the product is flipped over onto a second tape 143 and a second substrate 141. In fig. 13(H), the product is then diced, for example by mechanical sawing or laser cutting, to singulate the individual micro-actuators 114. This process results in a micro-actuator 114 in which the PZT element 120, including its electrodes, is bonded directly to the SST suppression layer 130 without any other material in between, such as an organic material such as polyimide, which would degrade the suppression effect of the suppression layer. The electrode layer may be comprised of a material such as gold, nickel, chromium, and/or copper. Gold has a young's modulus of about 79 GPA, copper has a young's modulus of about 117GPA, nickel has a young's modulus of about 200GPA, and chromium has a young's modulus of about 278 GPA. Preferably, there is no intermediate layer between the SST suppression layer 130 and the PZT element 120, the PZT element having a young's modulus of less than 20GPa, or substantially less than half that of the suppression layer.

The methods shown in figures 13(a) -13(G) are presently envisioned as the preferred method, although other methods may be used to produce the product, such as by bonding the constraining layer directly to the PZT surface using an adhesive such as epoxy.

SST constraining layer 130 serves as a substrate for PZT layer 120 during the additive manufacturing process and in the finished product. Therefore, confinement layer 130 is sometimes referred to as a substrate.

Figures 14(a) and 14(B) are oblique views of a gimbal-mounted dual-stage actuation (GSA) suspension assembled with a thin film PZT micro-actuator motor 114 according to the present invention. In a GSA suspension, the PZT is mounted on a trace gimbal (trace gimbal) that includes a gimbal assembly and acts directly on the gimbal region of the suspension that holds the read/write head slider 164. Figure 14(a) shows suspension 150 prior to attaching PZT micro-actuator assembly 114. Each of the two micro-actuators 114 will be bonded to and will span the gap 170 between the tongue 154 to which the distal end of the micro-actuator 114 will be bonded and the portion 156 of the trace gimbal to which the proximal end of the micro-actuator 114 will be bonded. Figure 14(B) shows suspension 150 after attachment of PZT micro-actuator 114. When the microactuator assembly 114 is actuated, it expands or contracts and thereby changes the length of the gap 170 between the tongue 154 and the portion 156 of the trace gimbal, thereby affecting the micro-positioning motion of the head slider 164 carrying the read/write transducer.

FIG. 15 is a cross-sectional view of FIG. 14(B) taken along section line B-B'. GSA suspension 150 includes a trace gimbal 152 that includes multiple layers of stainless steel, an insulator 157 such as polyimide, and a layer of signal conducting traces 158, such as copper covered by a protective metal 159 such as gold or a combination of nickel/gold. The microactuator 114 is attached at its distal end to a stainless steel tongue 154 extending from the gimbal region by a conductive adhesive 162, such as an epoxy containing silver particles to make it conductive, and at its proximal end to a mounting region 156 of stainless steel by a non-conductive adhesive 161, such as a non-conductive epoxy. The drive voltage electrical connection is made through a point of conductive adhesive 160 that extends from a gold plated copper contact pad 158 to the top surface of PZT micro-actuator 114 and, in this case, more specifically to SST layer 130, which constitutes the top electrode of the micro-actuator.

SST substrate thicknesses can vary to some extent without compromising the benefits of the disclosed thin film PZT structures. Figure 16 is a graph of stroke sensitivity versus SST constraining layer thickness for the micro-actuator of figure 15 according to simulations. According to simulations, thin film PZT with a 40 μm thick SST confinement layer exhibits a stroke sensitivity of 20nm/V, which is almost 3 times the stroke sensitivity of the 45 μm thick bulk PZT described above. However, a 45 μm thick SST constraining layer would provide better protection for the thin film PZT micro-actuator.

Figures 17(a) -17(F) illustrate an alternative process for fabricating a thin film PZT structure with an SST constraining layer according to the present invention. In fig. 17(a), the process starts with a silicon substrate 144 instead of the substrate 140 and tape 142 in fig. 17 (B). In fig. 17(B), SST layer 130 is bonded to silicon. The process is otherwise carried out in substantially the same manner as the process of fig. 13(C) -13(H), including flipping the assembly and removing the silicon substrate in fig. 17 (E). Furthermore, these figures explicitly show the addition of the innermost NiCr/Au layer 131, which is not explicitly shown in fig. 13 (E).

As described above, different types of constraining layers may be used in different embodiments. Other rigid materials (either conductive or non-conductive) may also be used as the constraining layer or substrate. For example, silicon may be used as the confinement layer material. Figure 18 is a top plan view of a thin film PZT structure with a silicon constraining layer according to an embodiment of the present invention. Figure 19 is a cross-sectional view of the micro-actuator of figure 18 taken along section line a-a'. Since the silicon constraining layer 230 is non-conductive, a via 232 is provided to conduct the PZT drive voltage from the conductive top layer 234 (e.g., the gold-coated silicon 230) through to the metallized electrode 126 on the PZT element 120. The vias may be formed and filled with a conductive metal, as disclosed in U.S. patent No.7,781,679 to Schreiber et al, which is owned by the assignee of the present invention and incorporated herein by reference for its teachings regarding conductive vias and methods of forming conductive vias.

Fig. 20 is a graph of stroke sensitivity versus silicon substrate thickness for the micro-actuator of fig. 19 according to a simulation. As shown in the graph, the thin film PZT having a thickness of 3 μm and the silicon substrate having a thickness of 20 μm may exhibit a stroke sensitivity of 31.5 nm/V. This is more than 4 times the stroke sensitivity of a design with 45 μm thick high volume PZT. The silicon substrate also contributes to the improvement of the reliability of the thin film PZT.

FIGS. 21(A) -21(E) illustrate a process for fabricating the thin film PZT structure of FIG. 18. The process begins in fig. 21(a) and 21(B) with a silicon substrate having a hole or via 232 that has been formed therein, for example, by laser drilling. In FIG. 21(C), a NiCr/Au layer is added to the silicon substrate 230 to form the top electrode 126. The NiCr/Au also fills the hole so that it becomes the electrical via 232. More generally, other conductive materials may be used to fill the via. In FIG. 21(D), the PZT thin film 120 is deposited, for example, by a sol-gel method, and another layer of NiCr/Au is added to form the bottom electrode 128. In FIG. 21(E), the material is flipped and a final NiCr/Au layer 131 is added. The

layers

131 and 126 are electrically connected by vias 232 so that a voltage (or ground potential) applied to the conductive gold layer 131 will be transmitted to the PZT element 126. This fabrication process for a thin film PZT micro-actuator with a silicon substrate can be simpler than the fabrication process for a thin film PZT with an SST substrate.

In an alternative embodiment, the intermediate vias on the silicon substrate may be replaced by one or more vias at the ends of the silicon. Thus, after the final cut, one semicircle will be formed at each end of the silicon. Figure 22 is a top plan view of a thin film PZT micro-actuator having a silicon or other non-conductive constraining layer 330 with a conductive top layer 231, such as a metallization layer, thereon and having

lateral vias

234, 236 electrically connecting the top layer 231 to the top electrode 126. FIG. 23 is a cross-sectional view of the PZT of FIG. 22 taken along section line A-A'. The manufacturing process for this embodiment may otherwise be the same as that of fig. 21(a) -21 (E).

The constraining layer may be larger (have a larger surface area) than the PZT element, the same size as the PZT element, or may be smaller (have a smaller surface area) than the PZT element. Figure 24 is a side cross-sectional view of a PZT micro-actuator assembly 414 where the constraining layer 430 is smaller than the PZT element 420, thereby basing the micro-actuator on a stepped structure with steps 434 and a bare shelf 422 that is not covered by the constraining layer 430, and where the shelf 422 is electrically connected to the PZT element 420. One benefit of this structure including the step to make the electrical connection is that the completed assembly including the electrical connection has a lower profile than if the constraining layer 430 covered the entire PZT 420. The low profile is advantageous because it means that more hard drive disks and their suspensions can be stacked together in a given disk stack height, thereby increasing data storage capacity within a given volume of the disk drive assembly. It is contemplated that the constraining layer 430 would cover more than 50% but less than 95% of the top surface of the PZT element 420 in order to accommodate electrical connections on the shelf 422.

Simulations have shown that a micro-actuator constructed in accordance with the present invention exhibits enhanced stroke sensitivity, as well as reduced rocking mode gain and torsional mode gain. These are advantageous in increasing the head positioning control loop bandwidth, which translates into low data seek times and low vibration susceptibility.

Figure 25 is an oblique view of a GSA suspension with a pair of PZT micro-actuators 414 of figure 24.

Fig. 26 is a cross-sectional view of the GSA suspension of fig. 25 taken along section line a-a'. In this embodiment, the conductive adhesive 460, such as a conductive epoxy, does not extend over the inhibit layer 430. Instead, the conductive epoxy 460 extends onto the shelf 422 on top of the PZT element 420 and establishes an electrical connection with the PZT 420 and with the entire microactuator assembly 414 through that surface. As depicted, the electrical connection defined by the conductive epoxy 460 has a lower peak extent compared to the top surface of the SST suppression layer 430. More generally, the wires that bond the electrical connection 461 to the microactuator assembly 414, whether electrically connected by a conductive adhesive or not, such as by thermosonic welding, soldering, or other techniques, may be no higher than, or even lower than, the uppermost extent of the microactuator 414. This allows the microactuator assembly 414, including its electrical connections, to be as thin as possible, which in turn allows for a denser density of data storage disks within the disk stack of the disk drive assembly.

Also shown explicitly is a layer of gold 469 on the stainless steel portion 154 of the trace gimbal on which the micro-actuator 414 is mounted. Gold layer 469 provides SST with corrosion resistance and enhanced electrical conductivity.

In this embodiment, as with all other embodiments, the constraining layer, and more generally the top surface of the PZT micro-actuator assembly, will generally have nothing bonded to it other than electrical connections.

Figure 27 is a graph of frequency response as a function of PZT frequency response for the suspension of figure 26 according to the simulation. The suspension exhibited reduced roll mode gain and torsional mode gain compared to the simulation without the constraining layer 430. These are advantageous in increasing the head positioning control loop bandwidth, which translates to low data seek times and low susceptibility to vibration.

28(A) -28(J) illustrate one process for fabricating the thin film PZT assembly 114 of FIG. 24. In fig. 28(a), a large-volume PZT wafer 420 is placed on a transfer belt 422. In fig. 28(B), the top electrode layer 426 is formed, for example, by sputtering and/or electrodeposition. In fig. 28(C), a mask 436 is placed on portions of the top electrode 426. In fig. 28(D), a conductive epoxy 432 is applied. In fig. 28(E), a stainless steel layer to be the constraining layer 430 is applied to the epoxy resin, and then the epoxy resin is cured. In fig. 28(F), the mask 436 is removed. In fig. 28(G), the assembly is turned upside down and placed down onto the second conveyor 443. In fig. 28(H), a bottom electrode layer 428 is formed, for example, by sputtering and/or electrodeposition. Then, the PZT element 420 is polarized. In fig. 28(I), the assembly is then flipped over again onto the third conveyor belt 444. In fig. 28(J), the assembly is singulated by cutting to produce a finished PZT micro-actuator assembly 414.

Figure 29 is a side cross-sectional view of a multi-layer PZT assembly 514 according to an additional embodiment of the present invention. The assembly includes a multi-layer PZT element 520, a first electrode 526 wrapped around the device, a second electrode 528, and a constraining layer 530 bonded to the PZT element 520 by a conductive epoxy 532. The figure shows a 2-layer PZT arrangement. More generally, the device may be an n-layer PZT device.

Figure 30 is a side cross-sectional view of a multi-layer PZT micro-actuator assembly 614 according to an additional embodiment of the present invention in which an extra thick electrode is used as a suppression layer. In this embodiment, PZT element 620 has a top electrode 626 and a bottom electrode 628. The top electrode 626 includes a thinner first portion 622 defining a shelf and a thicker second portion 630 performing most of the suppression function. A step 634 is located at the transition from the thinner first portion 622 to the thicker second portion 630. Second electrode 626 can be applied to PZT element 620 by a deposition process including masking to form step 634 or by a deposition process that selectively removes material to form the step. Alternatively, the second electrode 626 can be a piece of conductive material, such as SST that is separately formed and subsequently bonded to the PZT element 620. Thus, the top electrode 626 may be composed of the same material as the bottom electrode 628 or a different material than the bottom electrode 628. The thicker second portion 630 may be at least 50% thicker than the thinner portion 622 and/or the second electrode 628, or the thicker second portion 630 may be at least twice as thick as the thinner portion 622 and/or the second electrode 628. As with the embodiment of fig. 24-26, electrical connections to the shelf defined by the thinner portion 622 may be made, wherein the electrical connections do not extend as high or above the top surface of the thicker portion 630 defining the inhibit layer.

The scope of the invention is not limited to the precise embodiments shown. Variations will be apparent to those skilled in the art upon receiving the teachings herein. For example, the constraining layer need not be stainless steel, but could be some other relatively rigid and resilient material. The constraining layer need not be one material of a single layer, but may be composed of different materials of different layers. Although the inhibiting layer may cover the entire surface or substantially the entire top surface, the inhibiting layer may cover less than the entire surface, such as greater than 90% of the top surface area, greater than 75% of the top surface area, greater than 50% of the top surface area, or even greater than 25% of the top surface area. In embodiments having step features, the inhibit layer is envisioned to cover less than 95% of the top surface of the microactuator. The constraining layer need not be a single integrated layer, but may comprise a plurality of components, such as a plurality of constraining strips juxtaposed on the top surface of the PZT, the strips extending in or perpendicular to the direction of expansion/contraction. In one embodiment, the constraining layer may comprise two constraining members of stainless steel or other material bonded to the top surface of the PZT, the size and location of the two constraining members and their bonding generally mirror the mounting areas of the two mounting shelves to which the PZT is bonded on its bottom surface. When the overall stiffness increased by the constraining layer at the top of the device is approximately matched to the overall stiffness added to the bottom of the device by being bonded to the suspension and the bonded regions are approximately mirror images of each other, the resulting pure bending should be zero or close to zero. The result would be a PZT micro-actuator that does not exhibit substantial bending when actuated, as mounted and deployed in a suspension.

In any and all of the embodiments discussed herein or suggested thereby, the constraining layer may be selected to reduce PZT bending that would otherwise occur during actuation, or it may be selected to eliminate as much as possible of any PZT bending, or it may be selected to eliminate symptoms of PZT bending. In applications where PZT is used as a hard disk drive micro-actuator, it is contemplated that the use of a constraining layer to eliminate the symptoms of bending, as shown and described in the illustrative examples above, will be desirable in most cases because it increases the effective stroke length. However, in other applications of PZT, it may not be necessary to eliminate the symptoms. Thus, the present invention can generally be used to control the direction and magnitude of the bending of the PZT, regardless of how the PZT is mounted or otherwise adhered to other components in any particular application. Depending on the application and parameters selected, the constraining layer may be used to reduce the PZT bending to less than 50% of what it would otherwise occur, or less than 25% of what it would otherwise occur, or to eliminate the symptoms of the bending. When this symptom is eliminated, the PZT, which is bonded on its bottom surface at or near its ends and has a constraining layer on top, will bend such that its top surface assumes a concave shape when the PZT is in the expanded or extended mode, rather than a convex shape as a similar PZT without the constraining layer. Also, when the PZT is in the collapsed mode, the PZT will assume a convex shape, rather than a concave shape as would a similar PZT without the suppression layer.

For a number of reasons, the PZT element is sometimes pre-stressed in application such that when the PZT is not actuated by any voltage, it has been bent in one direction or the other, i.e. it has been concave or convex. Of course, such pre-stressed PZT may be used as a micro-actuator in the present invention. In this case, the PZT may not be bent into a pure or absolutely concave shape or a pure or absolutely convex shape. For example, if the PZT is pre-stressed such that it already has a concave shape, the device may bend to a more concave shape when actuated with a positive actuation voltage, and may bend to a less concave shape when actuated with a negative actuation voltage, which may be a nominally flat shape or it may be a convex shape. Unless specifically described otherwise, the terms "concave" and "convex" should be understood as relative terms, not absolute terms.

Figure 31 is a cross-sectional view of an embodiment of a multi-layer micro-actuator PZT assembly 3100 with a constraining layer of the micro-actuator assembly including one or more

active PZT layers

3130, 3140 that tend to act in an opposite direction to a primary active PZT layer 3120 adjacent to a surface of the suspension on which the micro-actuator 3100 is incorporated. The

PZT constraining layers

3130, 3140 thus constrain and actively oppose the action of the primary PZT layer 3120, and may therefore be referred to as "constraining layers" or "opposing (opposing) layers".

The PZT layers 3120, 3130 and 3140 are arranged in a stacked planar relationship with each other. The primary PZT layer 3120 includes active PZT regions 3121, which active PZT regions 3121 are subjected to an electric field during polarization and are thus polarized, and are subjected to an electric field during device actuation and expand or contract accordingly, and the primary PZT layer 3120 also includes

passive PZT regions

3122 and 3123, which

passive PZT regions

3122 and 3123 are not subjected to an effective electric field during polarization or actuation and are thus not significantly piezoelectrically active. The device includes: a first or bottom electrode 3124; a second and top electrode 3126 for the active PZT region; a third electrode 3132 comprising an end portion 3128, such that electrode 3132 extends between first active confinement layer 3130 and second active confinement layer 3140 and wraps around the end portion of the PZT; and a fourth electrode 3142 on the second active confinement layer 3140, the fourth electrode 3142 including a surrounding portion 3143 surrounding the sides and bottom of the device. The device can be bonded to the suspension using a conductive adhesive such as conductive epoxy 3160, the conductive epoxy 3160 mechanically and electrically bonding the electrode 3142 to the drive voltage electrical contact pad 158 providing the microactuator drive voltage, and conductive epoxy 3162, the conductive epoxy 3162 mechanically and electrically bonding the

electrodes

3124 and 3128 of the device to the ground portion 154 of the suspension.

In order to understand the operation of the device, one must understand how the device has been polarized. Figure 32 shows the polarization of the device of figure 31 including the resultant polarization direction of the multiple layers of active PZT material. Three voltages were applied: a positive voltage (Vp +) applied to the electrode 3124; a negative voltage (Vp-) applied to electrode 3128; and ground applied to electrode 3142. The arrows in the figure show the resulting polarization directions for the

active PZT layers

3120, 3130 and 3140.

Returning to fig. 31, this figure shows how the device 3100 is connected in this illustrative embodiment. The conductive epoxy 3162 bridges and thus electrically groups (gang) the

electrodes

3124 and 3132, essentially taking a 3-pole arrangement during polarization and changing it to a 2-pole arrangement in operation. Grouping of the electrodes can be accomplished by other well known means for making electrical connections other than conductive epoxy 3162, but the grouping function is accomplished using the same conductive epoxy 3162 as is used to bond the device to the suspension assembly without the need for a separate grouping step.

When a voltage is applied to the electrode 3142, which causes the main PZT layer 3120 to expand in the x-direction (left to right) as seen in the figure due to the expansion of the active region 3121, the active

PZT constraining layers

3130 and 3140 will contract in the x-direction. That is, the two constraining

layers

3130, 3140 tend to counteract the effect of the primary PZT layer 3120 or act in the opposite direction to the primary PZT layer 3120.

Explained in more detail, when the device is polarized as shown in fig. 32 and the device is electrically connected as shown in fig. 31, the device operates as follows. A positive device actuation voltage applied to electrical contact pad 158 and electrode 3142 causes the following reaction with electrode 3124 grounded. The actuation voltage applied to the primary PZT layer 3120 is of opposite polarity to that during polarization. The primary PZT layer 3120 thus contracts in the z-direction and thereby expands in the x-direction. Meanwhile, the actuation voltage has the same polarity as the voltage applied to the two

confinement layers

3130, 3140 during the polarization process. Those PZT layers thus expand in the z-direction and thereby contract in the x-direction. The two constraining

layers

3130, 3140 thus tend to contract, while the primary PZT layer 3120 tends to expand in the relevant direction.

The effect of the constraining layer acting in the opposite direction to the main PZT layer is similar to that described earlier with respect to the passive constraining layers (e.g., constraining layer 130 in fig. 10 and similar constraining

layers

230, 330, 430, 530, and 630 in other embodiments discussed above). The action of the active PZT suppression layer reduces bending that would otherwise occur due to the main PZT layer and its mounting (adhesion) to the suspension and can even eliminate the symptoms of this bending, thereby increasing the net displacement caused by the mounted micro-actuator in both cases.

Fig. 33 is an exploded view of the microactuator assembly of fig. 31 conceptually illustrating this electrical connection. Optional features not visible in fig. 31 and 32 but visible in fig. 33 include a pattern structure 3133 on electrode 3132 and a pressure reducer 3144 associated with electrode 3142, the function of which is described below.

Thinner microactuator assemblies are desirable for a number of reasons, including: (1) less mass on the suspension, particularly at or near the gimbal in a gimbal-based DSA suspension (which is sometimes referred to as a GSA suspension), which in turn means greater peel force (lift-off force) measured in terms of gravity, i.e., greater shock resistance; (2) reduced play (window); (3) greater stacking density within the head stack assembly, which means that more data can be stored in the same disk drive stack assembly spatial volume. Therefore, it may be desirable to make the PZT constraining layer very thin. However, the thinner the PZT constraining layers, the higher the electric field strength across those layers in operation, and thus the easier it is to depolarize them during operation due to too high an electric field strength. Therefore, the primary and constraining PZT layers should nominally have the same thickness.

One solution to make the constraining PZT layer thinner without being affected by depolarization is to use one or more of a number of possible ways to reduce the electric field strength across the constraining layer without significantly reducing the electric field across the main PZT layer. A first way to achieve this is to pattern one or more of the electrodes that are operatively associated with one of the active PZT constraining layers, but not with the primary PZT layer, for example by adding holes 3133 or adding other electrical voids to the electrode 3132. The pattern structure may also be in the form of a grid pattern (e.g., a grid of parallel or crossing conductors with electrical voids therebetween). By reducing the percentage of the area of the electrical conductors within the planar electrode 3132, the electric field strength across the constraining

layers

3130 and 3140 is effectively reduced, without reducing the electric field strength across the primary PZT layer 3120.

A second solution is to increase the coercive (coercive) electric field strength of the confinement layer, making the confinement layer more resistant to depolarization. Coercive electric field strength, or simply "coercivity" when referring to a piezoelectric material, is a measure of how much electric field strength is required to depolarize the piezoelectric material. Having the constraining

layers

3130, 3140 with a higher coercivity than the primary PZT layer 3120 allows those constraining layers to be made thinner without risk of depolarization when subjected to the same actuation voltage as the primary PZT layer. The constraining

layers

3130, 3140 may be made to have a higher coercivity, possibly at the expense of some loss of d31 stroke strength or other desired characteristics, by using different or slightly different piezoelectric materials, or by other processes.

Another solution is to reduce the effective voltage applied to the driven electrode associated with the constraining layer by using some voltage reducer such as a voltage divider resistor network, a diode, a voltage regulator, or any of a number of functionally similar devices as will occur to those of skill in the art. In this view, the universal voltage reducer 3144 reduces the voltage received by the electrode 3142, thereby reducing the electric field strength experienced by the constraining layer 3140, but not by the main PZT layer 3120. The voltage divider may be integrally formed and thus disposed between adjacent piezoelectric layers, for example by applying metallization that forms the electrode layers in such a way as to form a divider resistive network on the surface of the PZT material. A simple resistive divider would require a ground available on the same layer. Many configurations are possible, as will be apparent to the designer of such devices.

Both the patterned structure 3133 and the stress-reducer 3144 reduce the intensity of the electric field across the confinement layer 3140, allowing the confinement layer 3140 to be made thinner without making it unacceptably susceptible to depolarization during operation. Electrode pattern structures and/or stress-reducers and/or some other means for reducing the electric field strength across the constraining layers 3130 and/or 3140 may be used. The pattern structure 3133 is integrally formed with the electrode 3132, and thus with and integrated into the microactuator assembly. The pressure reducer for one of the electrodes may be integrally formed with and integrated into the assembly, or may be provided externally of the assembly, as long as the associated electrode has its own electrical lead and is not grouped with other electrodes.

All three solutions discussed above can be applied to piezoelectric microactuators having a single active constraining layer, two active constraining layers as shown in fig. 31-33 or more generally n active constraining layers as shown in fig. 35.

Fig. 34 is a graph showing the stroke sensitivity (in nm/V) of a micro-actuator with one or more active suppression layers according to simulations for various constrained layer structures (CLC) with a 45 μm thick primary PZT layer without any pattern structure 3133 or stress-reducer 3144 to reduce the electric field strength for three different structures:

a) one passive suppression layer ("passive CLC", diamond shaped data points);

b) one active suppression layer ("single layer", square data points); and

c) two active suppression layers ("double layers", triangular data points).

The data show that, at least for the parameters studied, a PZT micro-actuator with one active suppression layer acting in the opposite direction to the main PZT layer always yields higher stroke sensitivity than one where the suppression layer is a passive material. The highest stroke sensitivity is achieved using multiple thin layers of active PZT acting as a frustrating layer (i.e., acting in the opposite direction to the main PZT layer). In particular, the highest stroke sensitivity is achieved using two suppression layers, each 5 μm thick or about 11% of the thickness of the main PZT layer. Thus, the constraining layer is preferably less than 50% of the thickness of the primary PZT layer or more preferably less than 20% of the thickness of the primary PZT layer or even more preferably in the range of 5-15% of the thickness of the primary PZT layer.

For both active constraining layers, the stroke sensitivity decreases significantly as the thickness of the constraining layer increases, the highest stroke sensitivity being obtained for the case of two active constraining layers each about 5 μm thick. Thus, the microactuator preferably has two or more constraining layers having a combined thickness that is less than the thickness of the primary PZT layer, and more preferably having a combined thickness that is less than 50% of the thickness of the primary PZT layer, and still more preferably having each constraining layer being less than half the thickness of the primary PZT layer, and still more preferably having each constraining layer being less than 20% of the thickness of the primary PZT layer, and more preferably each constraining layer being in the range of 5-15% of the thickness of the primary PZT layer.

For a microactuator assembly having a single active frustrating layer, the loss in stroke sensitivity as the frustrating layer thickness increases is hardly as significant as in the case of two active frustrating layers. For a single active frustrating layer, the local maxima occur at about 10 μm thick. Thus, for a microactuator assembly having a single active suppression layer, the thickness of this layer is preferably in the range of 10-40% of the thickness of the primary PZT layer, and preferably in the range of about 10-20% of the thickness of the primary PZT layer.

Figure 35 is a cross-sectional view of another embodiment in which the microactuator assembly includes multiple active PZT layers and conceptually illustrates the poling process and the resulting poling direction. When the device of fig. 35 is electrically and mechanically bonded to the

suspension using electrodes

3524 and 3528 grouped by conductive epoxy, the result is one active PZT layer and three active PZT layers that act as constraining layers because they tend to act in the opposite direction to the active PZT layer. That is, as the top three PZT layers contract, the bottom PZT layer expands, and vice versa.

The structure of the microactuator assembly can be easily extended from a device having one active main PZT layer and two active PZT suppression layers as shown in fig. 31-33 and one active main PZT layer and 3 active PZT suppression layers as shown in fig. 35 to any number of active main layers and active suppression layers. The electric field strength across one or more of the constraining layers may be reduced in a number of ways including electrode pattern structures and/or stress-reducers. Experiments will reveal an optimal number of confinement layers and an optimal thickness for different applications.

The effect of the constraining layer on the PZT to enhance its stroke strength can also be achieved by using a multi-layer PZT arrangement in which the top PZT layer acts differently from the bottom layer in response to the drive voltage and thus acts as a constraining layer, such as in the embodiments of fig. 36-39.

Figure 36 is a side cross-sectional view of a multi-layer PZT micro-actuator assembly 714 according to another embodiment, wherein the assembly 714 is a multi-layer PZT device having multiple piezoelectric layers. The devices are co-polarised, which means that a voltage applied to the devices causes the two devices to expand or both to contract. The top piezoelectric layer 730 is attached to the bottom piezoelectric layer 720, which is the layer where the bottom piezoelectric layer 720 is closest to the suspension surface to which the assembly is bonded in a stacked manner. The top piezoelectric layer 730 is thicker than the bottom piezoelectric layer 720. The figure shows the structure of the device and the voltages applied during poling. The polarization method uses a positive voltage (Vp +) applied to the first electrode 726 and a Ground (GND) applied to the electrode 728 with a polarizing electric field oriented in the opposite direction, and the two electrodes are electrically isolated from each other by a strip or gap of non-conductive area (e.g., a gap in metallization) on each of the top and bottom electrodes. This is currently the most common method used for multilayer PZT polarization. The multi-layered PZT 714 is referred to as being "co-polarized".

Figure 37 is a side cross-sectional view of the PZT micro-actuator assembly 714 of figure 36 showing an example of how the assembly may be electrically and mechanically coupled to a suspension. In this figure, the suspension including its circuitry is the same as that shown in fig. 26, although the combination of this embodiment uses only

conductive epoxies

460 and 162, and does not use a non-conductive epoxy. In operation, when an actuation voltage is applied across the electrode 726/728, the two

piezoelectric layers

720, 730 expand in the longitudinal direction, or both contract in the longitudinal direction depending on the polarity of the applied actuation voltage.

Since the top PZT layer 730 is thicker than the bottom PZT layer 720, when the same actuation voltage is applied across the two layers, the top PZT layer 730 experiences a smaller electric field across it, and thus the top layer does not expand (or contract) as much as the bottom layer. The top piezoelectric layer thus acts as a confinement layer due to the difference in spreading between the two piezoelectric layers. The net effect may be that the effective stroke length of the device is increased compared to the case where the top piezoelectric layer is not present.

Figure 41 is a side cross-sectional view of the PZT micro-actuator of figure 36 showing the assembly mounted in the suspension, this time using the same bonding technique as shown in figure 26.

Figure 38 is a side cross-sectional view of a multi-layer PZT micro-actuator assembly 814 according to another embodiment, wherein the PZT is multi-layer PZT and the top PZT layer 830 is an active layer that tends to expand in the opposite direction as the bottom PZT layer 820, which will be referred to as the primary PZT layer 820. Assembly 814 has three individual electrodes 826/827/828 and has corresponding polarities during polarization. The device is said to be reverse polarized. The figure shows the structure of the device and the voltages applied during poling. The polarization method uses three separate electrodes 826/827/828 and three different voltages: vp + applied to the bottom electrode 827, Vp-applied to the top electrode 826, and GND applied to the middle or common electrode 828.

In operation, with the same voltage applied to the top and bottom electrodes while ground is applied to the common center electrode, the top PZT layer 830 or suppression layer expands in the longitudinal direction (or contracts in the longitudinal direction depending on the polarity of the applied actuation voltage), while the main PZT layer 820 on the bottom contracts in the longitudinal direction (or expands in the longitudinal direction), or vice versa. That is, the PZT layers 820 and 830 act or tend to act in opposite directions, with the action of the top piezoelectric layer at least partially cancelling the action of the bottom piezoelectric layer. Therefore, the PZT is referred to as "reverse polarization".

Figure 39 is a side cross-sectional view of the PZT micro-actuator assembly 814 of figure 38 showing an example of how the assembly may be electrically and mechanically coupled to a suspension. Conductive adhesive 162 is applied on the right hand side to bridge the nonconductive tape or gap 829, thereby applying ground to the top and

bottom electrodes

826 and 827. In operation, when an actuation voltage is applied across the top and bottom electrodes, the top PZT layer 830 expands and the bottom layer 820 contracts (or vice versa). The top PZT layer thus acts in the opposite direction to the bottom PZT layer. The top PZT layer thus acts not only as a passive constraining layer, but also as an active layer that actively pushes or pulls in the opposite direction to the bottom layer.

Figure 40 is a graph showing the stroke sensitivity of the PZT micro-actuator assemblies of figures 37 and 39 compared to the stroke sensitivity of a reference device as a function of the thickness of the top PZT layer, with the thickness of the bottom PZT layer being 45 μm for all traces on the graph. The reference device (indicated by the dashed trace) is a standard single layer PZT 45 μm thick. The reference device exhibited a stroke sensitivity of 9.0 nm/V. The data were derived from modeling simulations.

As can be seen from the graph, for the 3-pole configuration of fig. 39 with reverse polarization, the data is represented by triangular data points, and the presence of the fixed PZT layer 830 that is reverse polarized significantly increases stroke sensitivity compared to the baseline arrangement. For example, when the top PZT layer is 15 μm thick, the suspension stroke sensitivity is 24.5nm/V, which represents a 172% increase compared to the 9.0nm/V baseline. For this device, the reverse polarization configuration with a thin top constraining layer about 10-15 μm thick or about 22-33% of the thickness of the bottom PZT layer results in the highest stroke sensitivity. The stroke sensitivity generally decreases as the thickness of the top PZT layer increases. The 3-pole configuration of fig. 39 with a thin reverse polarization confining layer is therefore typically the most efficient and desirable configuration. It is contemplated that the top PZT layer is preferably between 5-50% of the thickness of the bottom PZT layer, and more preferably between about 10-40% of the thickness of the bottom PZT layer, and still more preferably between about 20-35% of the thickness of the bottom PZT layer.

As can be further seen, the configuration in which the top layer is a passive PZT material, with the data represented by square data points, yields the next best stroke sensitivity. The top layer can be made passive by not polarizing it and/or by arranging electrodes such that the top layer is not affected by the electric field when the whole micro-actuator device is actuated. Either of those can be achieved by cutting off the electrode 726 so that it does not wrap around the top of the device 714 and therefore does not actuate the CLC portion 730. The stroke sensitivity of this configuration is higher than the co-polarized configuration of fig. 36-37, in which an actuation voltage is applied to the top PZT layer 730 (represented by the circular data points), but lower than the reverse polarized configuration of fig. 38-39. The stroke sensitivity starts at a higher level than for the reference device, then increases with increasing thickness to about 25 μm or about 55% of the thickness of the primary PZT layer, then remains fairly constant until about 55 μm thick or about 122% of the thickness of the primary PZT layer, then decreases slightly with further increasing thickness of the constraining layer. Thus, the passive constraining layer may have a thickness greater than 0, but preferably has a thickness in the range of 25-55 μm or about 55-125% of the thickness of the active PZT layer.

Finally, the common polarization configuration of FIG. 37 is the design that performs the worst overall, with the top PZT layer being thicker than the bottom PZT layer, and the data represented by the rhombus data points. For this configuration, the stroke sensitivity is better than that for the reference single layer PZT only when the top PZT layer is greater than about 37 μm thick or about 82% of the thickness of the main PZT layer. The effective stroke length increases with increasing thickness of the top layer. When the thickness of the top PZT is 65 μm, the suspension stroke sensitivity is 29% higher than the 9.0nm/V reference. The 29% increase in stroke sensitivity over baseline represents the best results obtained for this configuration. For the case of common polarization, the thickness is therefore preferably at least 80% of the thickness of the primary PZT layer, and more preferably greater than the thickness of the primary PZT layer, and still more preferably greater than about 125% of the thickness of the primary PZT layer.

The design methodology of multilayer PZT micro-actuators using fixed PZT layers as constraining layers, such as shown in fig. 36-39, can be extended more generally to PZT with 3, 4,5 or more layers with 2, 3, 4 or more active layers as constraining layers, respectively.

U.S. patent No.9,070,394 to Hahn et al, owned by the present applicant and incorporated herein by reference, discloses in fig. 31-35 a multi-layer piezoelectric device in which the constraining layer comprises an unpolarized passive layer composed of a piezoelectric material. The inventors have found that because polarizing the piezoelectric material causes a permanent change in its dimensions, polarizing not all of the layers of a multi-layer piezoelectric device causes unequal dimensional changes and, thus, induces stress in the device. It is believed that such stresses can cause device cracking and premature failure.

Such stress in a multi-layer piezoelectric device in which the constraining layer is a layer of passive PZT material can be reduced by polarizing the constraining layer. In this way, both the active PZT layer and the passive layer undergo similar permanent changes in dimension during poling, thereby eliminating mechanical stress caused by poling only one layer or, more commonly, not all layers.

Figure 42 is a cross-sectional side view of PZT microactuator 914 having a polarizing but passive constraining layer 930 according to such an embodiment and showing the polarization of the device. In this embodiment, PZT micro-actuator 914 includes two

PZT layers

920, 930 arranged in a stacked relationship and attached together, for example by being integrally formed together as described with reference to previous embodiments. The bottom piezoelectric material layer 920 will become the primary or active PZT layer. The top piezoelectric material layer 930 will become a polarized but passive confinement layer.

A first method of polarizing the device is to apply a voltage differential across the top electrode 926 and the bottom electrode 927, respectively, and allow the intermediate electrode 928 to float. For example, + Vp is applied to the top electrode 926, -Vp is applied to the bottom electrode 927, and the middle electrode 928 is allowed to float. This grounding method will result in a uniform electric field being applied across the piezoelectric layer 920/930 and thus polarize both piezoelectric layers to the same extent simultaneously.

The second method is to apply + Vp and-Vp across those electrodes and connect the intermediate electrode 928 to ground, as shown in the figure.

More generally, the device may be polarized by applying three or more different voltages to the three or more terminals.

In most, but not necessarily all, cases, equivalent polarization (i.e. using equivalent electric field strength and polarizing at the same time) will be preferred. For two PZT layers of unequal thickness and three poling potentials, it may be desirable to apply unequal voltage differences across the different PZT layers, resulting in the same electric field strength and thus the same degree of poling across those different PZT layers. For example, if the two PZT layers have unequal thicknesses, the polarization voltages of +15V, Gnd and-10V may be the voltages required to produce equal electric field strengths across the two layers and equal polarizations across the two layers.

Figure 43 is a side cross-sectional view of the PZT micro-actuator assembly of figure 42 showing the assembly mounted in a suspension. In operation, an actuation voltage is applied to the intermediate electrode 928; and the bottom electrode 927 is grounded through the conductive epoxy 162, gold bond pad 469 and the stainless steel 154 of the suspension flexure. The top electrode 926 is not electrically connected to anything and therefore floats. This creates an actuating electric field across the primary PZT layer 920 causing it to expand or contract, with the top PZT layer 930 being passive and thus acting as a constraining layer. As described earlier with reference to other embodiments, the presence of the poled but passive confinement layer 930 serves to increase the effective stroke length of the device compared to the case where the confinement layer 930 is present.

In an exemplary embodiment, the device 914 has a total of three electrodes, but only the first and second electrodes are accessible from the bottom of the assembly. Since the third electrode is a floating electrode that is not connected to the drive voltage or ground, it need not be made electrically accessible, whether from the bottom of the device or elsewhere.

As with the other embodiments, the embodiments of fig. 42 and 43 are not limited to two layers. Rather, more generally, such a multilayer piezoelectric actuator may comprise a plurality of polarized and active PZT layers and a plurality of polarized but passive PZT layers.

The confinement layer need not be polarized exactly equally to the active piezoelectric layer, although in most cases equal polarization will be preferred. It is believed that substantially equal polarization will generally be sufficient for both layers. The two layers may be polarized to within 10% of each other or to within 25% of each other. Also, it is not strictly necessary that the constraining layer be completely and completely passive. Conversely, the constraining layer may have a voltage difference applied across it in operation that is less than 10% of the actuation voltage or actuation electric field applied across the first or active PZT layer, or less than 25% of the actuation voltage or electric field, or even less than 50% of the actuation voltage or electric field. Furthermore, although the inventors currently believe that it is generally desirable to have the PZT layers of the same thickness, it should be sufficient that the PZT layers have substantially equal thicknesses, for example within 10% of each other, or within 25% of each other in thickness.

While the third electrode 926 may float in operation, as shown in fig. 43, an alternative way of ensuring that no or substantially no electric field is present across the polarized but passive confinement layer 930 would electrically group the third electrode 926 with the second electrode 928, ensuring that there is no voltage differential across the confinement layer 930.

The PZT micro-actuator disclosed herein can be used as an actuator in areas other than disk drive suspensions. Such micro-actuators and their construction details thus constitute inventive devices, whether the environment in which they are used is the disk drive suspension environment or any other environment.

It will be understood that the terms "generally," "approximately," "about," "substantially," and "coplanar" as used in the present patent specification and claims, take into account a certain amount of variation with respect to any precise size, measurement, and arrangement of parts, and those terms should be understood in the context of the present specification and operation of the invention as disclosed herein.

It will be further understood that terms such as "top," "bottom," "upper" and "lower" as used in the present patent specification and claims are convenient terms for denoting the spatial relationship of components with respect to each other rather than any particular spatial or gravitational orientation. Accordingly, these terms are intended to encompass an assembly of parts, whether or not the assembly is oriented in a particular orientation as shown in the figures or described in the patent specification, upside down relative to that orientation, or in any other rotational variation.

All of the features disclosed in the patent specification, including the claims, abstract, and drawings, and all of the steps in any method or process so disclosed, may be combined in any combination, except combinations where at least some of such features and/or steps are mutually exclusive. Each feature disclosed in the patent specification, including the claims, abstract, and drawings, may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise. Thus, unless expressly stated otherwise, each feature disclosed is one example only of a generic series of equivalent or similar features.

It is to be understood that the term "invention" as used herein is not to be construed as implying that only a single invention having a single essential element or group of elements is presented. Likewise, it will also be appreciated that the term "invention" encompasses a number of separate innovations, each of which may be viewed as independently invention. Although the present invention has thus been described in detail with reference to the preferred embodiments and the accompanying drawings thereof, it should be apparent to those skilled in the art that various changes and modifications of the present invention can be effected therein without departing from the spirit and scope of the invention. It is, therefore, to be understood that the detailed description and drawings, while indicating the scope of the invention, are not intended to limit the scope of the invention, which should be inferred only from the appended claims and their legal equivalents as properly interpreted.

Claims

1. A method of manufacturing a piezoelectric microactuator assembly, the method comprising:

forming a top electrode layer on a top surface of the PZT element;

placing at least two masks at different locations on the top electrode to form a space between the at least two masks;

applying a conductive epoxy in the space between the at least two masks;

applying a constraining layer to the conductive epoxy;

removing the at least two masks;

forming a bottom electrode layer on a bottom surface of the PZT element opposite the top electrode; and

polarizing the PZT element to form an active piezoelectric layer.

2. The method of claim 1, further comprising placing the PZT element on a first conveyor belt prior to forming the top electrode.

3. The method of claim 2, wherein the method further comprises removing the first conveyor belt when removing the at least two masks.

4. The method of claim 1, wherein the top electrode is formed by sputtering and/or electrodeposition.

5. The method of claim 1, wherein a space between the at least two masks covers more than 50% of a surface of the top electrode.

6. The method of claim 1, wherein the confinement layer comprises unpolarized piezoelectric material.

7. The method of claim 1, wherein the constraining layer comprises a stainless steel layer.

8. The method of claim 1, further comprising applying a second conveyor belt to the constraining layer after applying the constraining layer to the conductive epoxy.

9. The method of claim 1, wherein the bottom electrode is formed by sputtering and/or electrodeposition.

10. The method of claim 1, wherein the confinement layer comprises silicon.

11. The method of claim 1, wherein applying the constraining layer to the conductive epoxy comprises bonding the constraining layer to the conductive epoxy without any additional layers therebetween, the constraining layer having a young's modulus equal to or less than 50 GPa.

12. The method of claim 1, wherein applying the constraining layer to the conductive epoxy comprises bonding the constraining layer to the conductive epoxy without any additional layers therebetween, the constraining layer having a young's modulus greater than 50 GPa.

13. The method of claim 1, wherein the constraining layer has a young's modulus greater than 100 GPa.

14. The method of claim 1, wherein the constraining layer has a young's modulus greater than 100GPa and is applied directly to the conductive epoxy without any organic material between the epoxy adhesive and the constraining layer.

15. The method of claim 1, wherein the active piezoelectric layer has a first portion covered by the constraining layer and a second portion not covered by the constraining layer.

16. The method of claim 15, wherein the method further comprises disposing and electrically bonding electrical connections to the active piezoelectric layer on the uncovered second portion.

17. The method of claim 16, wherein the electrical connection on the uncovered second portion rises to a height no greater than the constraining layer.

18. The method of claim 1, wherein the active piezoelectric layer is configured to be actuated by a voltage that causes the active piezoelectric layer to expand and bend in a direction that causes the top surface to become net concave.

19. The method of claim 1, wherein the active piezoelectric layer is configured to be actuated by a voltage that causes the active piezoelectric layer to contract, the piezoelectric element bending in a direction that causes the top surface to become purely convex.