CN113370001A - Chemical mechanical polishing method for silicon substrate - Google Patents
Chemical mechanical polishing method for silicon substrate Download PDFInfo
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- CN113370001A CN113370001A CN202110571775.4A CN202110571775A CN113370001A CN 113370001 A CN113370001 A CN 113370001A CN 202110571775 A CN202110571775 A CN 202110571775A CN 113370001 A CN113370001 A CN 113370001A
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- polishing
- silicon substrate
- abrasive particles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention discloses a chemical mechanical polishing method of a silicon substrate, which comprises the following steps: activating the polishing pad by using polishing solution containing abrasive particles, wherein the activating treatment comprises pre-polishing treatment, and the pre-polishing treatment refers to polishing the polishing pad by using the polishing solution containing the abrasive particles; and (3) placing the workpiece to be processed above the polishing pad after the activation treatment, and polishing the surface of the workpiece to be processed by using polishing liquid without abrasive particles. The silicon substrate chemical mechanical polishing method greatly simplifies the processing process steps of the silicon substrate, reduces the use of silica sol and other abrasive particles, and reduces the research and development cost and the investment of production equipment; under the condition of keeping relatively high cutting rate, the abrasive is saved, and personnel and environment are protected; compared with the existing mature process, the method has small change range, can be conveniently used for replacing the existing mature process, and has wide application prospect.
Description
Technical Field
The invention belongs to the technical field of semiconductor processing, relates to a novel silicon substrate chemical mechanical polishing method, and particularly relates to a processing method for obtaining a silicon substrate surface with a high cutting rate without an abrasive material, wherein the processing method greatly simplifies the process.
Background
Chemical mechanical polishing, which is an important technique in semiconductor device manufacturing processes, is widely used in the manufacture of various semiconductor wafers by using chemical etching and mechanical force to planarize a silicon wafer or other substrate material during processing. Currently, there are two main approaches to chemical mechanical polishing: 1) polishing is carried out by using polishing solution containing abrasive particles such as silica sol, alumina, cerium oxide or composite abrasive and a polyurethane polishing pad or similar products, but the abrasive particles inevitably have certain influence on the surface quality of the abrasive particles during polishing, wherein the influence caused by the abrasive particles with different particle sizes is different, and in addition, the polishing waste liquid is required to be treated, so the cost is increased to a certain extent; 2) for products which are not suitable for polishing solution containing abrasive particles, a fixed abrasive polishing pad and polishing solution without abrasive particles are generally matched, the fixed abrasive polishing pad is prepared by fixing abrasive particles into the polishing pad in advance to replace the abrasive of the original polishing solution, but the fixed abrasive polishing pad is complex to manufacture, the cost of the previous investment is increased, and simultaneously, problems are easy to occur in the polishing process, and irreversible damage is caused to the surface of a silicon substrate.
Therefore, the development of the chemical mechanical polishing process for the silicon substrate, which has the advantages of simple process, low cost and good polishing effect, has a practical significance.
Disclosure of Invention
The invention aims to overcome the defects of complex process and high cost of the traditional silicon substrate chemical mechanical polishing process, and provides the silicon substrate chemical mechanical polishing process with simple process, low cost and good polishing effect.
In order to achieve the purpose, the invention provides the following technical scheme:
a chemical mechanical polishing method for a silicon substrate, comprising the steps of:
(1) activating the polishing pad by using polishing liquid containing abrasive particles, wherein the activating treatment comprises a pre-polishing treatment, and the pre-polishing treatment refers to polishing the polishing pad by using the polishing liquid containing the abrasive particles;
(2) the method comprises the steps of placing a workpiece to be processed above an activated polishing pad, and polishing the surface of the workpiece to be processed by using polishing liquid without abrasive particles (specifically, the polishing pad is rotated by using a polishing machine, the polishing liquid is dripped into a liquid dripping head under control, the surface of the workpiece to be processed is processed, the activity of the polishing pad is kept, the polishing pad is only required to be in a wet state all the time and can be directly used subsequently), the cutting rate is high during polishing, and the efficient polishing of the surface of the workpiece to be processed can be guaranteed.
The silicon substrate chemical mechanical polishing method can realize chemical mechanical polishing under the condition of not adding abrasive particles, can avoid the defects of complicated polishing steps, high waste liquid treatment cost, environmental pollution and complicated manufacturing of a fixed abrasive polishing pad in the prior art, has simple process, only needs to activate the polishing pad before chemical mechanical polishing, does not need to use abrasive particles for subsequent polished wafers, greatly reduces the use and discharge treatment of chemical reagents, has small change range compared with the prior mature process, can conveniently replace the prior mature process by using the method, and has wide application prospect.
As a preferred technical scheme:
in the chemical mechanical polishing method for the silicon substrate, the abrasive particles are one or more of silica sol abrasive particles, silicon nitride abrasive particles and cerium oxide abrasive particles. The scope of the present invention is not limited thereto, and only some of the available abrasive particles are shown here, and those skilled in the art can select suitable abrasive particles according to actual needs in practical application.
According to the silicon substrate chemical mechanical polishing method, the grain diameter of the abrasive particles is 30-130 nm;
the polishing solution containing the abrasive particles comprises 2-40% by mass of abrasive particles. The particle size of the abrasive particles and the mass percentage of the abrasive particles in the polishing solution containing the abrasive particles are not limited to the above, and the particle size can be adjusted within a certain range, so that when the adjustment range is not easy to be too large, the particle size of the abrasive particles is too large, the surface scratches are increased, and the surface quality is influenced; the abrasive particles have too small a particle size to achieve an intended polishing effect; the polishing solution containing the abrasive particles has excessive mass percentage of the abrasive particles, which causes unnecessary resource waste and high cost; the polishing liquid containing abrasive particles has an amount of abrasive particles in a mass ratio that is too small to achieve the desired polishing effect.
A method of chemical mechanical polishing a silicon substrate as described above, said polishing pad being a suba 800 polishing pad, a suba600 polishing pad or a damping cloth (generally referred to as black damping cloth in the market). The scope of the present invention is not limited thereto, and only some of the polishing pads that have been tested and made possible by the present invention are given herein, and those skilled in the art can select a suitable polishing pad according to the actual needs.
In the chemical mechanical polishing method for a silicon substrate as described above, the pre-polishing treatment and the polishing process are performed using a polisher, which is a sainko polisher. The polishing machine of the present invention is not limited thereto, and only one possible type of equipment is shown here, and other conventional polishing equipment can be applied to the present invention as long as it can satisfy the polishing conditions.
A chemical mechanical polishing method of a silicon substrate as described above, the polisher comprising a grinding disc and a polishing head;
when the pre-polishing treatment and the polishing processing are carried out, the rotating speeds of the grinding disc and the polishing head are the same or different and are 20-60 rpm. The rotating speed of the grinding disc and the polishing head is too high, the abrasion degree of the wafer is increased, and the material removal rate of the wafer with too low rotating speed is reduced, so that the expected polishing effect cannot be achieved.
The chemical mechanical polishing method for the silicon substrate has the advantages that when the pre-polishing treatment and the polishing processing are carried out, the flow rate of the polishing solution is the same or different and is 90-150 mL/min, and the pressure is the same or different and is 129-239 g/cm2. The excessive flow of the polishing solution in the pre-polishing treatment causes unnecessary waste, and the excessive flow cannot achieve the expected polishing effect, thereby damaging the surface quality.
In a chemical mechanical polishing method for a silicon substrate as described above, the activation process further includes a cleaning process after the preliminary polishing process.
In the chemical mechanical polishing method for the silicon substrate, the cleaning treatment is to brush the polishing pad for 5-10 min by using a brush under the flushing of a cleaning agent (water, although other suitable cleaning agents can also be applicable), and the cleaning agent is not recycled. After polishing is finished, the polishing pad is thoroughly cleaned and is activated, abrasive particles are not needed for polishing the silicon wafer in subsequent polishing, and the silicon wafer can be polished only by using polishing liquid prepared by adding a small amount of electrolyte into deionized water.
In the chemical mechanical polishing method for the silicon substrate, the polishing solution containing no abrasive particles is an aqueous potassium carbonate solution, an aqueous potassium bicarbonate solution or an aqueous silicate solution.
Has the advantages that:
(1) the silicon substrate chemical mechanical polishing method greatly simplifies the processing process steps of the silicon substrate, reduces the use of silica sol and other abrasive particles, and reduces the research and development cost and the investment of production equipment;
(2) the silicon substrate chemical mechanical polishing method saves abrasive materials, protects personnel and environment and still obtains higher chemical mechanical polishing cutting rate of the silicon wafer under the condition of keeping relatively higher cutting rate;
(3) compared with the existing mature process, the silicon substrate chemical mechanical polishing method has small change range, can conveniently replace the existing mature process by using the method, and has great application prospect.
Detailed Description
The present invention will be described in more detail with reference to the following embodiments, which are illustrative only of some embodiments of the invention and not all embodiments of the invention.
Example 1
A chemical mechanical polishing method for a silicon substrate comprises the following steps:
(1) preparation of polishing solution containing abrasive particles:
weighing 50g of silica sol with the particle size of 130nm and the solid content of 40%, and adding deionized water to prepare 2 wt% of silica sol polishing solution;
(2) placing a silicon substrate above a suba 800 polishing pad, rotating the polishing pad by utilizing a sainko polishing device, setting the rotating speed of a grinding disc to be 50rpm and the rotating speed of a polishing head to be 50rpm, adding the prepared silica sol polishing solution with the mass fraction of 2 wt%, wherein the flow rate is 100ml/min, and pre-adding the surface of the silicon substrateWorking and processing pressure 129g/cm2The polishing time is 10 min;
(3) after polishing is finished, taking out the silicon wafer cleaning weighing record, and then thoroughly cleaning the suba 800 polishing pad, wherein the polishing pad is activated and is in an activated state, and no abrasive is required to be added in subsequent polishing;
(4) preparation of polishing solution containing no abrasive particles:
weighing 1000g of deionized water, adding 3.45g of potassium carbonate reagent into the deionized water, and uniformly stirring to prepare polishing solution without abrasive particles;
(5) placing a silicon wafer to be processed (different from the silicon substrate in the step (2)) above the activated suba 800 polishing pad obtained in the step (3), rotating the polishing pad by utilizing a sainko polishing device, setting the rotating speed of a grinding disc to be 50rpm and the rotating speed of a polishing head to be 50rpm, adding the prepared polishing solution without the abrasive to the mixture, wherein the flow rate of the polishing solution is 100ml/min, and carrying out surface chemical mechanical polishing under the pressure of 129g/cm2At this time, the chemical mechanical polishing efficiency reached 138.8nm/min, and the pressure was changed to 183g/cm2The cutting rate is increased to 230.6 nm/min; the pressure is 239g/cm2When the pressure was increased, the cutting rate was 335.4nm/min (the cutting rate increased with the increase in pressure).
Comparative example 1
A silicon substrate polishing method substantially the same as example 1 except that it did not have the steps (1) to (3), and used a suba 800 polishing pad which was not the suba 800 polishing pad in an activated state but a suba 800 polishing pad before activation treatment, and subjected to surface polishing with a pressure of 129g/cm2At this time, the chemical mechanical polishing efficiency reached 27nm/min, and the increase in pressure did not affect the cut rate of the chemical mechanical polishing of the silicon substrate.
As can be seen from the analysis of the combination of example 1 and comparative example 1, the polishing pad activation greatly improves the cutting rate of the chemical mechanical polishing, and after the polishing pad is activated, the cutting rate of the polishing solution without using abrasive particles is increased along with the increase of the pressure.
Example 2
A chemical mechanical polishing method for a silicon substrate,it is substantially the same as example 1 except that the polishing liquid containing no abrasive particles was 1000g of a 3.3-modulus aqueous solution of sodium silicate having a concentration of 0.025M, and the surface of the silicon substrate was chemically mechanically polished at a pressure of 129g/cm2At this time, the chemical mechanical polishing efficiency reached 52.3nm/min, and the pressure was changed to 183g/cm2The cutting rate was increased to 89.3 nm/min; the pressure is 239g/cm2When the pressure was increased, the stock removal rate was 128.8nm/min (stock removal rate increased with increasing pressure).
Comparative example 2
A silicon substrate polishing method which has substantially the same steps as those in example 2 except that it has no steps (1) to (3), and which uses a suba 800 polishing pad not in an activated state but a suba 800 polishing pad before activation treatment, and which performs surface polishing of a silicon substrate, polishing under different pressures, and a silicon wafer having no stock removal rate.
Example 3
A chemical mechanical polishing method for a silicon substrate, which is substantially the same as example 1, except that a black damping cloth was used in place of the suba 800 polishing pad, and a polishing liquid containing no abrasive particles was 1000g of a 3.3-modulus aqueous potassium silicate solution having a concentration of 0.025M, to chemically mechanically polish the surface of the silicon substrate at a pressure of 238g/cm2The cutting rate was 28.3 nm/min.
Comparative example 3
A silicon substrate polishing method which has substantially the same steps as those of example 3 except that it does not have the steps (1) to (3) and uses a black damping cloth not in an activated state but before activation treatment, and the silicon substrate is subjected to surface polishing and polished under different pressures without generating a chipping rate in the silicon wafer.
It can be seen from the analysis of the combination of example 1, comparative example 1, example 2, comparative example 2, example 3 and comparative example 3 that the polishing pad activation greatly improves the cut rate of chemical mechanical polishing, after the polishing pad activation, the polishing solution can achieve a higher cut rate without using abrasive particles, and the cut rate increases with the increase of pressure, while before the polishing pad activation, the polishing solution does not use abrasive particles, the silicon wafer polishing has almost no cut rate, and larger scratches are generated.
Comparative example 4
A silicon substrate polishing method was carried out in substantially the same manner as in example 1 except that in the step (1), the silica sol had a particle size of 150nm, and the silicon substrate was subjected to surface chemical mechanical polishing under a pressure of 129g/cm2At this time, the chemical mechanical polishing efficiency reached 140.2nm/min, and the pressure was changed to 183g/cm2The cutting rate was increased to 228.8 nm/min; the pressure is 239g/cm2The cutting rate was 341.1 nm/min.
Comparative example 5
A silicon substrate polishing method was carried out in substantially the same manner as in example 1 except that in the step (1), the silica sol had a particle size of 29nm, and the silicon substrate was subjected to surface chemical mechanical polishing under a pressure of 129g/cm2At this time, the chemical mechanical polishing efficiency reached 78.9nm/min, and the pressure was changed to 183g/cm2The cutting rate is increased to 108.3 nm/min; the pressure is 239g/cm2The cutting rate was 150.2 nm/min.
It can be seen from the analysis of the example 1 and the comparative examples 4 to 5 that the removal rate of the material of the wafer is not significantly increased when the particle size of the silica sol is too large, and the removal rate of the material of the wafer is significantly reduced when the particle size is too small.
Comparative example 6
A silicon substrate polishing method was carried out in substantially the same manner as in example 1 except that the silica sol polishing liquid prepared in step (1) was used in an amount of 50% by weight, and the silicon substrate was subjected to chemical mechanical polishing with a surface pressure of 129g/cm2At this time, the chemical mechanical polishing efficiency reaches 145.3nm/min, and the pressure is changed to 183g/cm2The cutting rate was increased to 246.7 nm/min; the pressure is 239g/cm2The cutting rate was 344.6 nm/min.
Comparative example 7
A silicon substrate polishing method was carried out in substantially the same manner as in example 1, except that the silica sol polishing liquid prepared in step (1) was used in an amount of 0.8% by weight, and the silicon substrate was subjected to chemical mechanical polishing with a pressure of 129g/cm2At this time, the chemical mechanical polishing efficiency reaches 96.2nm/min, and the pressure is changed to 183g/cm2The cutting rate was increased to 123.2 nm/min; the pressure is 239g/cm2The cutting rate was 167.8 nm/min.
It can be seen from the analysis of the embodiment 1 and the comparative examples 6 to 7 that the excessive concentration of the silica sol has an influence on the material removal rate of the wafer, but the influence is not great, the excessive usage amount of the reagent increases the cost; too low a silica sol concentration may reduce the material removal rate of the wafer to some extent.
In the present invention, the experimental conditions of the illustrated examples are not limited thereto, and the polishing pressure, the rotational speed of the grinding disc and the polishing head, and the flow rate of the polishing solution are not determined values, and the above-mentioned values are referred to in the experimental process, and are only preferred embodiments of the present invention, and are not intended to limit the present invention, and modifications, substitutions, and improvements made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (10)
1. A chemical mechanical polishing method for a silicon substrate is characterized by comprising the following steps:
(1) activating the polishing pad by using polishing liquid containing abrasive particles, wherein the activating treatment comprises a pre-polishing treatment, and the pre-polishing treatment refers to polishing the polishing pad by using the polishing liquid containing the abrasive particles;
(2) and (3) placing the workpiece to be processed above the polishing pad after the activation treatment, and polishing the surface of the workpiece to be processed by using polishing liquid without abrasive particles.
2. The chemical mechanical polishing method for a silicon substrate according to claim 1, wherein the abrasive particles are one or more of silica sol abrasive particles, silicon nitride abrasive particles and cerium oxide abrasive particles.
3. The chemical mechanical polishing method for a silicon substrate according to claim 1, wherein the abrasive particles have a particle size of 30 to 130 nm;
the polishing solution containing the abrasive particles comprises 2-40% by mass of abrasive particles.
4. A chemical mechanical polishing method for a silicon substrate according to claim 1, wherein said polishing pad is a suba 800, suba600 polishing pad or damping cloth.
5. A chemical mechanical polishing method for a silicon substrate as recited in claim 1, wherein the pre-polishing treatment and the polishing process are carried out using a polisher, which is a sainko polisher.
6. The chemical mechanical polishing method for a silicon substrate according to claim 5, wherein the polishing machine comprises a grinding disc and a polishing head;
when the pre-polishing treatment and the polishing processing are carried out, the rotating speeds of the grinding disc and the polishing head are the same or different and are 20-60 rpm.
7. A chemical mechanical polishing method for a silicon substrate according to claim 6, wherein the flow rate of the polishing liquid is 90 to 150mL/min and the pressure is 129 to 239g/cm, which are the same or different, when the pre-polishing treatment and the polishing treatment are performed2。
8. A chemical mechanical polishing method for a silicon substrate as recited in claim 1, wherein said activation process further comprises a cleaning process after the preliminary polishing process.
9. The chemical mechanical polishing method for the silicon substrate as claimed in claim 8, wherein the cleaning treatment is to brush the polishing pad with a brush for 5-10 min under the washing of the cleaning agent.
10. The chemical mechanical polishing method for a silicon substrate according to claim 1, wherein the polishing liquid containing no abrasive particles is an aqueous potassium carbonate solution, an aqueous potassium bicarbonate solution or an aqueous silicate solution.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110571775.4A CN113370001A (en) | 2021-05-25 | 2021-05-25 | Chemical mechanical polishing method for silicon substrate |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110571775.4A CN113370001A (en) | 2021-05-25 | 2021-05-25 | Chemical mechanical polishing method for silicon substrate |
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| CN113370001A true CN113370001A (en) | 2021-09-10 |
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| JP2003115488A (en) * | 2001-10-03 | 2003-04-18 | Hitachi Ltd | Semiconductor device manufacturing method |
| US20040197541A1 (en) * | 2001-08-02 | 2004-10-07 | Joseph Zahka | Selective electroless deposition and interconnects made therefrom |
| CN102189471A (en) * | 2010-03-10 | 2011-09-21 | 硅电子股份公司 | Method for polishing a semiconductor wafer |
| CN103493183A (en) * | 2011-04-26 | 2014-01-01 | 旭硝子株式会社 | Method for polishing non-oxide single crystal substrate |
| CN105415168A (en) * | 2015-10-30 | 2016-03-23 | 佛山市金辉高科光电材料有限公司 | Composite polishing pad and preparation method thereof |
| CN108247528A (en) * | 2016-12-29 | 2018-07-06 | 中芯国际集成电路制造(上海)有限公司 | A kind of processing method of grinding pad |
| CN108857860A (en) * | 2018-06-12 | 2018-11-23 | 宁波江丰电子材料股份有限公司 | Grinding method, wafer orientation ring and its application of wafer orientation ring and chemical mechanical polishing apparatus |
-
2021
- 2021-05-25 CN CN202110571775.4A patent/CN113370001A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040197541A1 (en) * | 2001-08-02 | 2004-10-07 | Joseph Zahka | Selective electroless deposition and interconnects made therefrom |
| JP2003115488A (en) * | 2001-10-03 | 2003-04-18 | Hitachi Ltd | Semiconductor device manufacturing method |
| CN102189471A (en) * | 2010-03-10 | 2011-09-21 | 硅电子股份公司 | Method for polishing a semiconductor wafer |
| CN103493183A (en) * | 2011-04-26 | 2014-01-01 | 旭硝子株式会社 | Method for polishing non-oxide single crystal substrate |
| CN105415168A (en) * | 2015-10-30 | 2016-03-23 | 佛山市金辉高科光电材料有限公司 | Composite polishing pad and preparation method thereof |
| CN108247528A (en) * | 2016-12-29 | 2018-07-06 | 中芯国际集成电路制造(上海)有限公司 | A kind of processing method of grinding pad |
| CN108857860A (en) * | 2018-06-12 | 2018-11-23 | 宁波江丰电子材料股份有限公司 | Grinding method, wafer orientation ring and its application of wafer orientation ring and chemical mechanical polishing apparatus |
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