CN113366651A - Display module, manufacturing method thereof and display device - Google Patents
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- CN113366651A CN113366651A CN201980090116.XA CN201980090116A CN113366651A CN 113366651 A CN113366651 A CN 113366651A CN 201980090116 A CN201980090116 A CN 201980090116A CN 113366651 A CN113366651 A CN 113366651A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000010409 thin film Substances 0.000 claims abstract description 85
- 239000010408 film Substances 0.000 claims description 70
- 238000000034 method Methods 0.000 claims description 34
- 229920002120 photoresistant polymer Polymers 0.000 claims description 28
- 238000002161 passivation Methods 0.000 claims description 17
- 230000000903 blocking effect Effects 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 7
- 238000002310 reflectometry Methods 0.000 claims description 7
- 239000010410 layer Substances 0.000 description 342
- 239000000463 material Substances 0.000 description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 230000008569 process Effects 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 230000009975 flexible effect Effects 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 229910052749 magnesium Inorganic materials 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 238000005452 bending Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 229910052779 Neodymium Inorganic materials 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910052741 iridium Inorganic materials 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 229920002430 Fibre-reinforced plastic Polymers 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000011151 fibre-reinforced plastic Substances 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 238000002365 hybrid physical--chemical vapour deposition Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229920000058 polyacrylate Polymers 0.000 description 2
- 229920002577 polybenzoxazole Polymers 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229920005573 silicon-containing polymer Polymers 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 229920001621 AMOLED Polymers 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229920000547 conjugated polymer Polymers 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- -1 polyethylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- KKEYFWRCBNTPAC-UHFFFAOYSA-L terephthalate(2-) Chemical compound [O-]C(=O)C1=CC=C(C([O-])=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-L 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F18/00—Pattern recognition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/878—Arrangements for extracting light from the devices comprising reflective means
Abstract
A display module (100), a manufacturing method thereof and a display device (200), wherein the display module (100) comprises: an organic light emitting display layer (20), a thin film transistor array layer (40), a pixel insulating layer (60) and a sensor (80); an open slot (62) is formed in the pixel insulating layer (60), and a light resistance part (10) is arranged on the side wall (621) of the open slot (62); the organic light-emitting display layer (20) comprises a light-emitting layer (224), the light-emitting layer (224) is arranged in the open slot (62), the light-blocking part (10) is used for reflecting or absorbing light rays emitted by the organic light-emitting display layer (20), and the light rays emitted by the light-emitting layer (224) of the organic light-emitting display layer (20) are reflected or absorbed through the light-blocking part (10), so that the signal-to-noise ratio of the sensor (80) is improved.
Description
The embodiment of the application relates to the technical field of display, in particular to a display module, a manufacturing method of the display module and a display device.
An Organic Light-Emitting Diode (OLED) display, also called an Organic electroluminescent display, is a new display device, and has the advantages of simple manufacturing process, low cost, low power consumption, high brightness, wide application range of operating temperature, Light and thin volume, fast response speed, easy realization of color display and large-screen display, easy realization of matching with an integrated circuit driver, easy realization of flexible display, and the like, thereby having a wide application prospect.
However, the optical signal generated by the organic light emitting display layer in the currently developed OLED display module passes through the thin film transistor array layer to interfere with the functional sensor, so that the signal-to-noise ratio of the functional sensor is reduced.
Disclosure of Invention
The embodiment of the application aims to provide a display module, a manufacturing method thereof and a display device, so as to solve the technical problem that the signal-to-noise ratio of a functional sensor in the display module in the prior art is low.
The embodiment of the application solves the technical problem and provides the following technical scheme:
a manufacturing method of a display module comprises the following steps: the display device comprises an organic light emitting display layer, a thin film transistor array layer, a pixel insulating layer and a sensor;
the pixel insulating layer is laminated on the thin film transistor array layer;
the sensor is arranged on the surface of the thin film transistor array layer far away from the pixel insulating layer;
an open slot is formed in the pixel insulating layer, and a light resistance part is arranged on the side wall of the open slot;
the organic light-emitting display layer comprises a light-emitting layer, the light-emitting layer is arranged in the open slot, and the light-resisting part is used for reflecting or absorbing light rays emitted by the organic light-emitting display layer.
Optionally, the light blocking portion includes a light blocking film and/or a high reflectance film.
Optionally, a sidewall of the open slot is inclined with respect to the thin film transistor array layer, and the photoresist portion is disposed on the sidewall.
Optionally, an opening area of the open groove is smaller than a cross-sectional area of the sensor.
Optionally, the open area of the open slot ranges from 6um × 6um to 10um × 10 um.
Optionally, the sensor is facing the open slot.
Optionally, the organic light emitting display layer comprises a first electrode layer;
the first electrode layer and the pixel insulating layer are sequentially stacked on the thin film transistor array layer, and the first electrode layer is electrically connected with the thin film transistor array layer;
the opening groove partially exposes the electrode layer.
Optionally, the display module further comprises a functional film layer;
the functional film layer and the first electrode layer are sequentially stacked on the thin film transistor array layer, a connecting groove is formed in the functional film layer, and the connecting groove partially exposes the drain electrode of the thin film transistor array layer;
the first electrode layer part is positioned in the connecting groove; the drain electrode is connected with the organic light-emitting display layer through the first electrode layer, so that the thin film transistor array layer controls the organic light-emitting display layer.
Optionally, the functional film layer comprises an organic film layer and a passivation layer;
the passivation layer and the organic film layer are sequentially stacked on the thin film transistor array layer, a first through groove and a second through groove are formed in the passivation layer and the organic film layer respectively, the first through groove is communicated with the second through groove, and the first through groove and the second through groove jointly form the connecting groove.
The embodiment of the application also provides the following technical scheme for solving the technical problems:
a display device, comprising: a substrate;
the driving layer is arranged on the substrate; and the number of the first and second groups,
the display module is arranged on the driving layer, and the driving layer is used for driving the display module.
The embodiment of the application also provides the following technical scheme for solving the technical problems:
a manufacturing method of a display module comprises the following steps: providing a thin film transistor array layer and a sensor, wherein the sensor is arranged on the surface of the thin film transistor array layer;
sequentially forming a first electrode layer and a pixel insulating layer on the other surface of the thin film transistor array layer, wherein the first electrode layer is electrically connected with the thin film transistor array layer;
opening grooves are formed in the pixel insulating layer;
forming a light resistance part on the side wall of the open slot;
and a light emitting layer and a second electrode layer are sequentially formed in the open slot, the light emitting layer is positioned between the first electrode layer and the second electrode layer, and the light resistance part is used for reflecting or absorbing light rays emitted by the light emitting layer.
Optionally, the sensor is facing the open slot.
Optionally, before forming the first electrode layer on the other surface of the thin film transistor array layer, the method further includes:
forming a functional film layer on the thin film transistor array layer;
a connecting groove is formed in the functional film layer, and the connecting groove partially exposes out of the drain electrode of the thin film transistor array layer; the first electrode layer is formed on the connecting groove, and the drain electrode is connected with the light-emitting layer through the first electrode layer, so that the thin film transistor array layer controls the light-emitting layer.
Optionally, the forming of the light blocking portions at both sides of the open slot includes:
forming a photoresist film on the opening region of the open slot;
shielding the photoresist film formed on the side wall of the open slot, and exposing and developing the photoresist film in other areas;
and etching the photoresist film in other areas to form the photoresist part.
Compared with the prior art, at the display module assembly that this application embodiment provided, through set up the open slot on the pixel insulating layer, and set up the light resistance portion on the lateral wall of open slot, light resistance portion can with set up in the open slot the light that the luminescent layer on organic light emitting display layer sent reflects or absorbs, thereby can avoid the light that the luminescent layer sent passes thin-film transistor array layer to sensor has reduced the interference of light that the luminescent layer sent has improved the SNR of sensor.
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art that other drawings can be obtained according to the structures shown in the drawings without inventive labor.
Fig. 1 is a schematic structural diagram of a display module according to an embodiment of the present disclosure;
fig. 2 is a schematic structural diagram of a display module according to another embodiment of the present disclosure;
FIG. 3 is a flowchart illustrating a method for manufacturing a display module according to an embodiment of the present disclosure;
FIGS. 4a to 4d are schematic diagrams illustrating the manufacturing process of the display module shown in FIG. 1 at different stages;
fig. 5 is a schematic structural diagram of a display device according to an embodiment of the present application.
In order to facilitate an understanding of the present application, the present application is described in more detail below with reference to the accompanying drawings and specific embodiments. It will be understood that when an element is referred to as being "secured to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may be present. The terms "vertical", "horizontal", "left", "right", "inside", "outside" and the like used in the present specification are for illustrative purposes only and express only a substantial positional relationship, for example, with respect to "vertical", if a positional relationship is not strictly vertical for the purpose of achieving a certain object, but is substantially vertical, or utilizes the property of being vertical, it belongs to the category of "vertical" described in the present specification.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
It is to be understood that, as shown herein, the positional relationship between one or more layers of the substance involved in the embodiments of the present application, such as the terms "stacked" or "formed" or "applied" or "disposed", is expressed using terms such as: any terms such as "stacked" or "formed" or "applied" may cover all manner, kinds and techniques of "stacked". For example, sputtering, plating, molding, Chemical Vapor Deposition (CVD), Physical Vapor Deposition (PVD), evaporation, Hybrid Physical-Chemical Vapor Deposition (HPCVD), Plasma Enhanced Chemical Vapor Deposition (PECVD), Low Pressure Chemical Vapor Deposition (LPCVD), and the like.
In addition, the technical features mentioned in the different embodiments of the present application described below may be combined with each other as long as they do not conflict with each other.
Referring to fig. 1 and fig. 2, a display module 100 according to an embodiment of the present disclosure includes an organic light emitting display layer 20, a thin film transistor array layer 40, a pixel insulating layer 60, and a sensor 80.
The pixel insulating layer 60 is stacked on the thin film transistor array layer 40; the sensor 80 is disposed on a side of the thin film transistor array layer 40 away from the pixel insulating layer 60.
An opening groove 62 is formed in the pixel insulating layer 60, the sensor 80 corresponds to the opening groove 62, and preferably, the sensor 80 is opposite to the opening groove 62.
The organic light emitting display layer 20 includes a light emitting layer 224, the light emitting layer 224 is disposed in the opening groove 62, the light emitting layer 224 can emit light, light emitted from the light emitting layer 224 can pass through the thin film transistor array layer 40 to the sensor 80, and due to interference of the light emitted from the light emitting layer 224 to the sensor 80, a signal-to-noise ratio of the sensor 80 is small, which affects normal use.
In order to avoid the interference of the light emitted from the light emitting layer 224 of the organic light emitting display layer 20 to the sensor 80, the light blocking portion 10 is disposed on the sidewall 621 of the open slot 62, and the light blocking portion 10 is used for reflecting or absorbing the light emitted from the light emitting layer 224, so that the light emitted from the light emitting layer 224 can be prevented from passing through the thin film transistor array layer 40 to the sensor 80, the interference of the light emitted from the light emitting layer 224 to the sensor 80 is reduced, and the signal-to-noise ratio of the sensor 80 is improved.
In order to better avoid the interference of the light emitted by the light emitting layer 224 of the organic light emitting display layer 20 to the sensor 80, the sensor 80 is directed to the open slot 62, the light emitted by the light emitting layer 224 forms reflected light due to the reflection of the electrode layer of the organic light emitting display layer 20, and most of the emitted light is diffused out of the area where the open slot 62 is located, so that the reflected light in the area where the open slot 62 is located is less, and therefore, the interference of the light emitted by the light emitting layer 224 to the sensor 80 can be further reduced by directing the sensor 80 to the open slot 62, and the signal-to-noise ratio of the sensor 80 is improved.
Compared with the prior art, the present application provides a display module assembly 100, through set up open slot 62 on the pixel insulating layer 60, and set up the light resistance portion 10 on the lateral wall 621 of open slot 62, light resistance portion 10 can set up in the open slot 62 the light that the luminescent layer 224 of organic light emitting display layer 20 sent reflects or absorbs, thereby can avoid the light that the luminescent layer 224 sent passes thin film transistor array layer 40 to sensor 80, has reduced the interference of the light that the luminescent layer 224 sent to sensor 80, has improved sensor 80's signal-to-noise ratio.
The thin film transistor array layer 40 includes a plurality of thin film transistors 42, and each two adjacent thin film transistors 42 are spaced apart by a predetermined distance.
Each of the thin film transistors 42 shares a common substrate, buffer layer, gate insulating layer, and interlayer insulating layer. The substrate is used as a substrate for carrying a plurality of thin film transistors 42, and the buffer layer, the gate insulating layer, the interlayer insulating layer and the conductive layer are sequentially formed on the substrate.
Each of the thin film transistors 42 further includes a drain electrode 422, a source electrode 424, an active layer and a gate electrode, the active layer is disposed between the buffer layer and the gate insulating layer, the drain electrode 422 and the source electrode 424 respectively penetrate through the interlayer insulating layer and the gate insulating layer and are respectively connected to two opposite sides of the active layer, and the gate electrode is disposed between the gate insulating layer and the interlayer insulating layer and is located right above the active layer.
In some embodiments, the positions of the active layer and the gate electrode are interchanged, that is, the gate electrode is disposed between the gate insulating layer and the buffer layer, the active layer is disposed between the interlayer insulating layer and the gate insulating layer and is located right above the gate electrode, and the source electrode 424 and the drain electrode 422 respectively penetrate through the interlayer insulating layer and are respectively connected to two opposite sides of the active layer.
The organic light emitting display layer 20 includes a plurality of organic light emitting diodes 22, and each adjacent two organic light emitting diodes 22 are disposed at a predetermined distance.
Each of the organic light emitting diodes 22 includes a first electrode layer 222, a light emitting layer 224, and a second electrode layer 226. The light emitting layer 224 is stacked between the first electrode layer 222 and the second electrode layer 226 to emit light.
The first electrode layer 222 and the pixel insulating layer 60 are sequentially stacked on the thin film transistor array layer 40, and the first electrode layer 222 is electrically connected to the thin film transistor array layer 40.
The light emitting layer 224 is prepared by doping a host material with a certain proportion of organic light emitting material. When an external voltage is applied, holes in the first electrode layer 222 migrate to the light emitting layer 224, electrons in the second electrode layer 226 migrate to the light emitting layer 224, the electrons and the holes meet in the light emitting layer 224 to form electron-hole pairs, the electrons transition from an excited state to a ground state, and energy is released in the form of radiation photons, thereby generating electroluminescence. The organic luminescent material can be selected from organic micromolecular materials or organic polymer materials to realize electroluminescence.
The first electrode layer 222 is an anode layer, and when an external voltage is applied to the first electrode layer 222, holes in the first electrode layer 222 migrate to the light-emitting layer 224. The first electrode layer 222 may have a single-layer structure or a multi-layer structure. The first electrode layer 222 of a single layer structure may include a metal layer having Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, or a mixture thereof. The first electrode layer 222 of the multi-layered structure may include a metal layer having Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, or a mixture thereof and a transparent conductive oxide layer including a transparent conductive oxide material. The transparent conductive oxide material may include one or more of Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), zinc oxide (ZnO), and Indium Tin Zinc Oxide (ITZO). For example, the first electrode layer 222 of the multilayer structure may be configured as a three-layer structure including a first transparent conductive oxide layer, a metal layer, and a second transparent conductive oxide layer.
The second electrode layer 226 is a cathode layer, and when an external voltage is applied to the second electrode layer 226, electrons in the second electrode layer 226 migrate to the light-emitting layer 224. The second electrode layer 226 may be made of aluminum, magnesium, silver, molybdenum, titanium, or an alloy thereof.
In some embodiments, the positions, materials and functions of the first electrode layer 222 and the second electrode layer 226 can be interchanged according to differences in processing technology or actual structure of the product, for example: the first electrode layer 222 can be disposed as a cathode layer and the second electrode layer 226 can be disposed as an anode layer; the first electrode layer 222 can also be provided as an anode layer and the second electrode layer 226 can be provided as a cathode layer.
The pixel insulating layer 60 may be used to planarize the concave-convex surface of the thin film transistor array layer 40.
On the other hand, the pixel insulating layer 60 may be configured to open an open slot 62 on a surface thereof, and set the light blocking portion 10 on a sidewall 621 of the open slot 62, so as to reflect or absorb light emitted by the light emitting layer 224 of the organic light emitting display layer 20 disposed in the open slot 62, thereby preventing the light emitted by the light emitting layer 224 from passing through the thin film transistor array layer 40 to the sensor 80, reducing interference of the light emitted by the light emitting layer 224 to the sensor 80, and improving a signal-to-noise ratio of the sensor 80.
In order to make the light resistance part 10 disposed on the sidewall 621 of the open slot 62 reflect or absorb light emitted from the light emitting layer 224 of the organic light emitting display layer 20 to the greatest extent, in some embodiments, the sidewall 621 of the open slot 62 is inclined with respect to the thin film transistor array layer 40, the open slot 62 is substantially in a truncated cone shape, the cross-sectional area of the open slot 62 is gradually reduced in a direction away from the thin film transistor array layer 40, and the light resistance part 10 is stacked on the sidewall 621.
Specifically, for example, if the angle of inclination of the sidewall 621 of the open groove 62 with respect to the thin film transistor array layer 40 is smaller, the light reflecting area of the light blocking portion 10 stacked on the sidewall 621 is larger, and thus the light emitted from the light emitting layer 224 of the organic light emitting display layer 20 can be reflected or absorbed to the greatest extent. In some embodiments, the inclination angle may be set according to the manner of depositing or sputtering the photoresist portion 10, and it is only necessary to ensure that the larger the light reflecting area of the photoresist portion 10 stacked on the sidewall 621 is, the better.
In order to reduce the light emitted from the light emitting layer 224 to pass through the tft array layer 40 to the sensor 80 as much as possible, and further reduce the interference of the light emitted from the light emitting layer 224 to the sensor 80, in this embodiment, the opening area of the opening groove 62 is set smaller than the cross-sectional area of the sensor 80, and specifically, the opening area of the opening groove 62 ranges from 6um × 6um to 10um × 10 um.
In order to dispose the light emitting layer 224 of the organic light emitting display layer 20 in the opening groove 62, in this embodiment, the opening groove 62 is partially exposed out of the electrode layer, and then the light emitting layer 224 may be stacked on the electrode layer, so that the light emitting layer 224 stacked on the electrode layer is located in the opening groove 62, and the light blocking portion 10 surrounds and is disposed on the side surface of the light emitting layer 224, so that the light blocking portion 10 can reflect or absorb light emitted by the light emitting layer 224 of the organic light emitting display layer 20 to the greatest extent, and interference of the light emitted by the light emitting layer 224 to the sensor 80 is reduced.
The pixel insulating layer 60 is made of an insulating material, such as SiOx, SiNx, or any combination thereof.
The sensor 80 is any functional sensor 80 of the electronic terminal, for example, the functional sensor 80 may be an optical fingerprint recognition sensor 80, an ambient light sensing sensor 80, a distance monitoring sensor 80, and the like.
The light blocking part 10 includes a light blocking film and/or a high reflectance film.
The light shielding film is used for absorbing light emitted by the light emitting layer 224 of the organic light emitting display layer 20 in the open groove 62, so that interference of the light emitted by the light emitting layer 224 on the sensor 80 is reduced, and the signal-to-noise ratio of the sensor 80 is improved.
The material of the light-shielding film can be organic BM (black matrix) or inorganic metal material.
The high-reflectivity film is used for reflecting light emitted by the light-emitting layer 224 of the organic light-emitting display layer 20 in the open groove 62, the light is reflected to form reflected light, and the reflected light is emitted in a direction away from the sensor 80. Thereby reducing interference of light emitted by the luminescent layer 224 with the sensor 80 and increasing the signal-to-noise ratio of the sensor 80.
The high-reflectivity film is a silicon-based alloy oxynitride SiMNO film material, wherein M is one or more alloying elements doped for improving the application of silicon in a vacuum coating technology. The alloying element is at most 20 weight percent based on the total weight of the silicon-based alloy, and is preferably one or more of aluminum, tin, indium, titanium, zirconium, and the like. Particularly preferably SiAlNO, SiSnNO and SiTiNO metal-dielectric composite film coating materials.
In order to make the high-reflectivity thin film better reflect the light emitted from the light-emitting layer 224 of the organic light-emitting display layer 20, the reflection band interval of the high-reflectivity thin film is set to include the R/G/B light-emitting spectrum of the light-emitting layer 224, so that the high-reflectivity thin film can reflect the light of all bands emitted from the light-emitting layer 224, and the interference of the light emitted from the light-emitting layer 224 to the sensor 80 is reduced to the maximum extent.
Referring to fig. 2 again, in order to improve the performance characteristics of the thin film transistor array layer 40, in some embodiments, the display module 100 further includes a functional film layer 30, and the functional film layer 30, the first electrode layer 222 and the pixel insulating layer 60 are sequentially stacked on the thin film transistor array layer 40.
The functional film layer 30 includes an organic film layer 32 and a passivation layer 34; the passivation layer 34 and the organic film layer 32 are sequentially formed on the thin film transistor array layer 40.
The organic film layer 32 is used for reducing a parasitic capacitance generated between the first electrode layer 222 and the drain electrode 422, and reducing a load and power consumption of the organic light emitting display layer 20, and the thickness of the organic film layer 32 is 1 to 200 μm, preferably 2 to 100 μm, and more preferably 5 to 50 μm. The material of the organic film layer 32 may be thermosetting materials such as polyimide, polybenzoxazole, silicone modified polymer, silicone polymer, acrylic polymer, epoxy polymer, organic film containing silica filler, and the like.
The passivation layer 34 has the functions of reducing power consumption, preventing the occurrence of the corrosion phenomenon, eliminating crosstalk, and the like. The passivation layer 34 is a silicon nitride layer or a silicon oxynitride layer; in some embodiments, the passivation layer 34 comprises one or a combination of silicon dioxide, doped silicon dioxide, or polysilicon.
In order to electrically connect the first electrode layer 222 with the thin film transistor array layer 40, a connection groove is formed on the functional film layer 30, the connection groove partially exposes the drain electrode 422 of the thin film transistor array layer 40, the first electrode layer 222 is partially located in the connection groove, and the drain electrode 422 is connected with the organic light emitting display layer 20 through the first electrode layer 222, so that the thin film transistor array layer 40 controls the organic light emitting display layer 20.
Specifically, a first through groove and a second through groove are respectively formed in the passivation layer 34 and the organic film layer 32, the first through groove and the second through groove are communicated, and the first through groove and the second through groove jointly form the connecting groove.
Referring to fig. 3, the present application provides a method for manufacturing a display module 100 according to one embodiment, and it should be noted that the above explanation of the embodiment of the display module 100 is also applicable to the method for manufacturing the display module 100 according to the present embodiment, and is not detailed herein to avoid redundancy.
The manufacturing method of the display module 100 includes:
and step S31, providing a thin film transistor array layer and a sensor, wherein the sensor is arranged on the surface of the thin film transistor array layer.
Specifically, the thin film transistor array layer 40 includes a plurality of thin film transistors 42, and each adjacent two of the thin film transistors 42 are disposed at a predetermined distance. The sensor 80 is any functional sensor of the electronic terminal, for example, the functional sensor 80 may be an optical fingerprint recognition sensor, an ambient light sensing sensor, a distance monitoring sensor, and the like.
And step S32, sequentially forming a first electrode layer and a pixel insulating layer on the other surface of the thin film transistor array layer, wherein the first electrode layer is electrically connected with the thin film transistor array layer.
Referring to FIG. 4a, a layer with a thickness of about a thickness of the thin film transistor array layer 40 is deposited by magnetron sputtering, thermal evaporation or other film forming methods
The first electrode layer 222. The first electrode layer 222 may include a metal layer having Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, or a mixture thereof.
Specifically, a Plasma Enhanced Chemical Vapor Deposition (PECVD) method may be used to deposit a thickness of about a thickness on the thin film transistor array layer 40
The pixel insulating layer 60, wherein the material of the pixel insulating layer 60 may be an oxide, a nitride or an oxynitride, and the pixel insulating layer 60 may have a single-layer, double-layer or multi-layer structure. Specifically, the pixel insulating layer 60 may be SiOx, SiNx, or any combination thereof.
And step S33, opening an open slot on the pixel insulating layer.
Referring to fig. 4b, specifically, the patterning process may include only a photolithography process, or include a photolithography process and an etching step, and may also include other processes for forming a predetermined pattern, such as printing, inkjet printing, etc.; the photolithography process refers to a process of forming a pattern by using a photoresist, a mask plate, an exposure machine, and the like, including processes of film formation, exposure, development, and the like. The corresponding patterning process may be selected according to the structure formed in the embodiments of the present application.
In this embodiment, a layer of photoresist is formed on the pixel insulating layer 60, a mask is used to expose and develop the photoresist, so that the photoresist forms a photoresist non-remaining region and a photoresist remaining region, preferably, the photoresist non-remaining region is a region where the sensor 80 faces the pixel insulating layer 60, the pixel insulating layer 60 in the photoresist non-remaining region is etched away by an etching process, and the remaining photoresist is stripped to form the open slot 62, where the open slot 62 has a side wall 621, and the sensor 80 faces the open slot 62.
Step S34, a light blocking portion is formed on a sidewall of the open groove.
Referring to fig. 4c, specifically, a photoresist film is formed on the opening region of the open slot 62; the photoresist film may be a light-shielding film and/or a high-reflectivity film.
The photoresist film formed on the sidewall 621 of the opening groove 62 is shielded, and the photoresist film in other areas is exposed and developed.
And etching the photoresist film in other areas to form the photoresist part 10.
And step S35, sequentially forming a light-emitting layer and a second electrode layer in the open slot, wherein the light-emitting layer is located between the first electrode layer and the second electrode layer, and the light resistance part is used for reflecting or absorbing light emitted by the light-emitting layer.
Referring to fig. 4d, in particular, the method for manufacturing the light emitting layer 224 includes: the polymer-based OLED in which the conjugated polymer is the light emitting material is placed in a deposition chamber, a region where the light emitting layer 224 does not need to be formed is shielded by using a mask, the light emitting layer 224 is formed in the open groove 62 by sputtering or evaporation, and nitrogen or oxygen is introduced during deposition. In some embodiments, the light-emitting layer 224 may also be formed using spin-on coating or ink-jet processes.
Specifically, magnetron sputtering, thermal evaporation or other film forming methods are used to deposit a layer with a thickness of about the thickness of the light-emitting layer 224
And a second electrode layer 226. The second electrode layer 226 may be made of aluminum, magnesium, silver, molybdenum, titanium, or an alloy thereof.
Further, in order to improve the performance characteristics of the thin film transistor array layer 40, in some embodiments, before forming the first electrode layer 222 on the thin film transistor array layer 40, the method further includes: and forming a functional film layer on the thin film transistor array layer.
Specifically, the functional film layer 30 includes an organic film layer 32 and a passivation layer 34, and the passivation layer 34 and the organic film layer 32 are sequentially formed on the thin film transistor array layer 40.
Specifically, the organic film layer 32 and the passivation layer 34 may be deposited by a plasma enhanced chemical vapor deposition method, a low pressure chemical vapor deposition method, an atmospheric pressure chemical vapor deposition method, or an electron cyclotron resonance chemical vapor deposition method, and the deposition temperature is less than or equal to 600 ℃.
Specifically, the material of the organic film layer 32 may be a thermosetting material such as polyimide, polybenzoxazole, a silicone modified polymer, a silicone polymer, an acrylic polymer, an epoxy polymer, or an organic film containing a silica filler. The passivation layer 34 comprises one or a combination of silicon dioxide, doped silicon dioxide, or polysilicon.
Further, in order to connect the thin film transistor array layer 40 with the first electrode layer 222 of the organic light emitting display layer 20, in some embodiments, before forming the first electrode layer 222 on the thin film transistor array layer 40, the method further includes:
and a connecting groove is formed in the functional film layer, and the connecting groove partially exposes the drain electrode of the thin film transistor array layer. The electrode layer is formed on the connecting groove, and the drain electrode is connected with the light-emitting layer through the first electrode layer, so that the thin film transistor array layer controls the light-emitting layer.
Specifically, a mask layer is formed above the functional film layer 30 by a photolithography process, and the connection groove is formed by dry etching. The dry etching can be performed by plasma etching, reactive ion etching, inductively coupled plasma etching, or other methods, and the etching gas can be gas containing fluorine and chlorine, such as CF4、CHF 3、SF 6、CC1 2F 2Equal gas or the above gas and 02The resulting mixed gas.
Compared with the prior art, the application provides a pair of display module assembly, through set up the open slot on the pixel insulating layer, and set up the light resistance portion on the lateral wall of open slot, light resistance portion can with set up in the open slot the light that the luminescent layer on organic light emitting display layer sent reflects or absorbs, thereby can avoid the light that the luminescent layer sent passes thin-film transistor array layer to sensor has reduced the interference of light that the luminescent layer sent has improved the SNR of sensor 80.
Referring to fig. 5, another embodiment of the present disclosure further provides a display device 200, which includes a substrate 210, a driving layer 220, a display module 100, and a passivation layer 230. The driving layer 220 is used for driving the display module 100.
The substrate 210 may use a flexible substrate such as a material including thin glass, a metal foil, or a plastic substrate, etc. having flexibility, for example, a plastic substrate having a flexible structure including a resin such as Polyimide (PI), Polycarbonate (PC), polyethylene glycol terephthalate (PES), Polyethersulfone (PES), polyethylene film (PEN), Fiber Reinforced Plastic (FRP), etc. coated on both sides of a base film.
The driving layer 220 includes a scan circuit and a switch circuit, the scan circuit is connected to the switch circuit, and the switch circuit is connected to the display module 100.
The scanning circuit scans and selects the corresponding pixel unit through the switching circuit, and applies a driving voltage to the pixel unit to make the pixel unit emit light, thereby displaying an image.
The driving layer 220 may drive the display module 100 by different driving methods, including a Passive driving method (Passive MaSrix, PMOLED) and an active driving method (AcSive MaSrix, AMOLED).
The protection layer 230 is used for protecting the display module 100, wherein the protection layer 230 may include, for example, ZrO, CeO2、ShO 2And the like. The protective layer 230 may be formed as a transparent film to cover the entire surface of the display module 100.
As described above, the display device 200 provided by the embodiment of the present application is flexible by being made of a flexible material, and becomes bendable.
By virtue of the flexible property, the display device 200 can utilize the bending parameters detected by the bending sensor to implement the execution of various application functions by setting the bending sensor, such as the bending sensor, thereby greatly improving the experience of the user.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present application, and not to limit the same; within the context of the present application, where technical features in the above embodiments or in different embodiments can also be combined, the steps can be implemented in any order and there are many other variations of the different aspects of the present application as described above, which are not provided in detail for the sake of brevity; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present application.
Claims (14)
- A display module, comprising: the display device comprises an organic light emitting display layer, a thin film transistor array layer, a pixel insulating layer and a sensor;the pixel insulating layer is laminated on the thin film transistor array layer;the sensor is arranged on the surface of the thin film transistor array layer far away from the pixel insulating layer;an open slot is formed in the pixel insulating layer, and a light resistance part is arranged on the side wall of the open slot;the organic light-emitting display layer comprises a light-emitting layer, the light-emitting layer is arranged in the open slot, and the light-resisting part is used for reflecting or absorbing light rays emitted by the organic light-emitting display layer.
- The display module of claim 1,the light blocking part comprises a light shielding film and/or a high-reflectivity film.
- The display module of claim 1,the side wall of the open slot is inclined relative to the thin film transistor array layer, and the light resistance part is arranged on the side wall.
- The display module of claim 1,the opening area of the open slot is smaller than the cross-sectional area of the sensor.
- The display module of claim 4,the opening area of the open slot ranges from 6um to 10 um.
- The display module according to any one of claims 1-5,the sensor is opposite to the open slot.
- The display module according to any one of claims 1-5,the organic light emitting display layer includes a first electrode layer;the first electrode layer and the pixel insulating layer are sequentially stacked on the thin film transistor array layer, and the first electrode layer is electrically connected with the thin film transistor array layer;the opening groove partially exposes the electrode layer.
- The display module of claim 7,the display module further comprises a functional film layer;the functional film layer and the first electrode layer are sequentially stacked on the thin film transistor array layer, a connecting groove is formed in the functional film layer, and the connecting groove partially exposes the drain electrode of the thin film transistor array layer;the first electrode layer part is positioned in the connecting groove; the drain electrode is connected with the organic light-emitting display layer through the first electrode layer, so that the thin film transistor array layer controls the organic light-emitting display layer.
- The display module of claim 8,the functional film layer comprises an organic film layer and a passivation layer;the passivation layer and the organic film layer are sequentially stacked on the thin film transistor array layer, a first through groove and a second through groove are formed in the passivation layer and the organic film layer respectively, the first through groove is communicated with the second through groove, and the first through groove and the second through groove jointly form the connecting groove.
- A display device, comprising:a substrate;the driving layer is arranged on the substrate; and the number of the first and second groups,the display module according to any one of claims 1-9, disposed on the driving layer, the driving layer being configured to drive the display module.
- A manufacturing method of a display module is characterized by comprising the following steps:providing a thin film transistor array layer and a sensor, wherein the sensor is arranged on the surface of the thin film transistor array layer;sequentially forming a first electrode layer and a pixel insulating layer on the other surface of the thin film transistor array layer, wherein the first electrode layer is electrically connected with the thin film transistor array layer;opening grooves are formed in the pixel insulating layer;forming a light resistance part on the side wall of the open slot;and a light emitting layer and a second electrode layer are sequentially formed in the open slot, the light emitting layer is positioned between the first electrode layer and the second electrode layer, and the light resistance part is used for reflecting or absorbing light rays emitted by the light emitting layer.
- The method of claim 11,the sensor is opposite to the open slot.
- The method according to any one of claims 11 to 12,before forming the first electrode layer on the other surface of the thin film transistor array layer, the method further comprises:forming a functional film layer on the thin film transistor array layer;a connecting groove is formed in the functional film layer, and the connecting groove partially exposes out of the drain electrode of the thin film transistor array layer; the first electrode layer is formed on the connecting groove, and the drain electrode is connected with the light-emitting layer through the first electrode layer, so that the thin film transistor array layer controls the light-emitting layer.
- The method according to any one of claims 11 to 12,forming a light blocking part at both sides of the open groove, including:forming a photoresist film on the opening region of the open slot;shielding the photoresist film formed on the side wall of the open slot, and exposing and developing the photoresist film in other areas;and etching the photoresist film in other areas to form the photoresist part.
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| CN109285870A (en) * | 2018-09-28 | 2019-01-29 | 京东方科技集团股份有限公司 | Display base plate and preparation method thereof, display panel |
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| CN107025451B (en) * | 2017-04-27 | 2019-11-08 | 上海天马微电子有限公司 | A kind of display panel and display device |
| KR20190006374A (en) * | 2017-07-10 | 2019-01-18 | 삼성전자주식회사 | The Image Sensor including the Blocking Member for blocking the interference between a plurality of light receiving sensors and the Electronic Device including the Image Sensor |
| CN109034089B (en) * | 2018-08-07 | 2020-11-20 | 武汉天马微电子有限公司 | Display device and electronic equipment |
| CN109686774B (en) * | 2019-01-04 | 2020-11-20 | 京东方科技集团股份有限公司 | Organic light-emitting display panel and manufacturing method thereof |
| CN109887963B (en) * | 2019-02-18 | 2021-07-06 | 武汉华星光电半导体显示技术有限公司 | OLED display panel |
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| CN107330426A (en) * | 2017-08-28 | 2017-11-07 | 京东方科技集团股份有限公司 | A kind of fingerprint identification device, display panel, fingerprint identification method |
| CN208460033U (en) * | 2018-07-04 | 2019-02-01 | 固安翌光科技有限公司 | A kind of optical finger print identification screen body and fingerprint identification device |
| CN109285870A (en) * | 2018-09-28 | 2019-01-29 | 京东方科技集团股份有限公司 | Display base plate and preparation method thereof, display panel |
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