CN113363214A - Semiconductor device and manufacturing method thereof - Google Patents

Semiconductor device and manufacturing method thereof Download PDF

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Publication number
CN113363214A
CN113363214A CN202110566379.2A CN202110566379A CN113363214A CN 113363214 A CN113363214 A CN 113363214A CN 202110566379 A CN202110566379 A CN 202110566379A CN 113363214 A CN113363214 A CN 113363214A
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dielectric layer
interlayer dielectric
source
channel
metal
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毛淑娟
刘战峰
殷华湘
刘金彪
王桂磊
李永亮
罗军
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Institute of Microelectronics of CAS
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Institute of Microelectronics of CAS
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823814—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0922—Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
    • H—ELECTRICITY
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H—ELECTRICITY
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    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys
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    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H—ELECTRICITY
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    • H10B99/00—Subject matter not provided for in other groups of this subclass

Abstract

The application provides a semiconductor device and a manufacturing method thereof, a first device positioned in a first interlayer dielectric layer is formed on a substrate, a second device is formed on the first interlayer dielectric layer, the second device comprises a source electrode, a drain electrode, a channel between the source electrode and the drain electrode and a grid connected with the channel, wherein the source electrode and the drain electrode of the second device are metal germanosilicide, the channel is a silicon germanium alloy, the first device and the second device at least comprise a storage device and a logic device, the second interlayer dielectric layer covering the second device is formed, the source electrode and the drain electrode improve the emission efficiency of source end current carriers for the metal germanosilicide, the high performance of the semiconductor device is realized by combining a high mobility germanosilicide channel, the metal germanosilicide can be formed under the low-temperature process, the performance of the device is prevented from being influenced by the high-temperature process, because the second interlayer dielectric layer is covered after the second device is formed, the device is formed by a single-chip three-dimensional integration technology, so that the size of the device is reduced, and the data access bandwidth and the calculation energy efficiency are improved.

Description

Semiconductor device and manufacturing method thereof
Technical Field
The present disclosure relates to semiconductor devices and manufacturing methods thereof, and more particularly, to a semiconductor device and a manufacturing method thereof.
Background
With the development of semiconductor very large scale integrated circuits, the prior art processes have approached physical limits. Under the drive of the purpose of further miniaturization and multi-functionalization of electronic products, other new technologies, new materials and new technologies are explored, and one of the two-dimensional restrictions of the chip is removed and the chip structure is developed into a three-dimensional structure.
The micro-system integration based on the complementary metal oxide semiconductor integrated circuit is also developed from three-dimensional packaging, system-in-package and multi-chip three-dimensional system integration to single-chip three-dimensional integration, so that the volume of the micro-system is continuously reduced, the circuit delay and the power consumption are reduced, and the system performance is greatly improved.
On the other hand, information systems are moving toward high informatization and intellectualization, and are increasingly in need of larger data volume, higher read processing speed, and lower power consumption. The traditional information computing and processing system is based on a traditional civil von Neumann structure for a long time, namely, a computing chip is separated from a storage chip, data exchange is carried out through a long external connection line, and great challenges are faced on data access and storage bandwidth, computing energy efficiency and system complexity.
There is a need to structurally expand the access bandwidth, speed, and reduce transmission loss between a computing chip and a memory chip. The conventional improvement method comprises the following steps: 1) the computing and storage chips are tightly combined together through system-in-package or multi-chip three-dimensional system integration; 2) the storage and calculation integration is realized from the circuit architecture, and the storage unit and the calculation unit are integrated in the same unit in the same device process. However, the transmission distance of the method is in the micron order, and the bandwidth and the energy efficiency cannot be further improved.
The traditional three-dimensional semiconductor device needs to activate source and drain impurities at high temperature, so that the source and drain carrier emission efficiency is high, the high performance of the device is realized, the heat dissipation of an upper layer device is poor, and the performance of the device is affected if the device is formed at high temperature, so that the performance of the device is low, therefore, the upper layer of the traditional three-dimensional semiconductor device needs to be formed at low temperature, and the source and drain cannot provide enough carriers if the device is formed at low temperature, so that the performance of the device is also low.
Therefore, how to improve the performance of the three-dimensional semiconductor device is an urgent technical problem to be solved in the field.
Disclosure of Invention
In view of the above, an object of the present application is to provide a semiconductor device and a manufacturing method thereof, which can improve the performance of the semiconductor device and improve the emission efficiency of source carriers.
In order to achieve the purpose, the technical scheme is as follows:
in a first aspect, an embodiment of the present application provides a method for manufacturing a semiconductor device, including:
providing a substrate; a first device positioned in the first interlayer dielectric layer is formed on the substrate;
forming a second device on the first interlayer dielectric layer;
the second device comprises a source electrode, a drain electrode, a channel between the source electrode and the drain electrode of the second device and a grid electrode connected with the channel;
the source electrode and the drain electrode of the second device are made of metal germanosilicide, and the channel is made of germanium-silicon alloy;
the first device and the second device comprise at least one memory device and one logic device;
and forming a second interlayer dielectric layer covering the second device.
Optionally, the source, the drain and the channel in the second device are formed by:
forming a semiconductor layer in the active region on the first interlayer dielectric layer; the semiconductor layer is made of germanium-silicon alloy; the active region comprises the channel region and source and drain regions on two sides of the channel region, and a semiconductor layer of the channel region is used as a channel of the second device;
forming a metal layer on the semiconductor layer of the source drain region, and annealing to enable the semiconductor layer of the source drain region and the metal layer to react to form metal germanosilicide;
and removing the unreacted metal layer to form a source electrode and a drain electrode of the second device in the source and drain regions.
Optionally, before forming the metal layer on the semiconductor layer of the source-drain region, the method further includes:
and carrying out P-type doping in the semiconductor layer of the source drain region.
Optionally, the germanium-silicon alloy includes: an alloy of single crystal silicon and single crystal germanium, an alloy of single crystal silicon and polycrystalline germanium, an alloy of polycrystalline silicon and single crystal germanium, or an alloy of polycrystalline silicon and polycrystalline germanium;
the metal includes: nickel, titanium, cobalt or platinum.
Optionally, the method further includes:
forming a first contact which penetrates through the second interlayer dielectric layer and is connected with the source electrode of the second device, a second contact which penetrates through the second interlayer dielectric layer and is connected with the drain electrode of the second device, a third contact which penetrates through the first interlayer dielectric layer and the second interlayer dielectric layer and is connected with the source electrode of the first device, and a fourth contact which penetrates through the first interlayer dielectric layer and the second interlayer dielectric layer and is connected with the drain electrode of the first device.
Optionally, the method further includes:
and forming a wiring layer on the second interlayer dielectric layer to connect the first contact and the fourth contact or connect the second contact and the third contact. In a second aspect, embodiments of the present application provide a semiconductor device, including:
a first device and a second device stacked vertically; the first device is positioned in a first interlayer dielectric layer on a substrate, the second device is positioned in a second interlayer dielectric layer, and at least one of the first device and the second device comprises a storage device and a logic device;
the second device is positioned on one side of the first device far away from the substrate;
the second device comprises a source electrode, a drain electrode, a channel between the source electrode and the drain electrode and a grid electrode connected with the channel;
the source electrode and the drain electrode are made of metal germanosilicide, and the channel is made of germanium-silicon alloy.
Optionally, the source and the drain of the second device are P-doped.
Optionally, the germanium-silicon alloy includes: an alloy of single crystal silicon and single crystal germanium, an alloy of single crystal silicon and polycrystalline germanium, an alloy of polycrystalline silicon and single crystal germanium, or an alloy of polycrystalline silicon and polycrystalline germanium; the metal is: nickel, titanium, cobalt or platinum.
Optionally, the device further comprises:
the first contact penetrates through the second interlayer dielectric layer and is connected with the source electrode of the second device, the second contact penetrates through the second interlayer dielectric layer and is connected with the drain electrode of the second device, the third contact penetrates through the first interlayer dielectric layer and the second interlayer dielectric layer and is connected with the source electrode of the first device, and the fourth contact penetrates through the first interlayer dielectric layer and the second interlayer dielectric layer and is connected with the drain electrode of the first device.
The embodiment of the application provides a semiconductor device and a manufacturing method thereof, a substrate is provided, a first device positioned in a first interlayer dielectric layer is formed on the substrate, a second device is formed on the first interlayer dielectric layer, the second device comprises a source electrode, a drain electrode, a channel between the source electrode and the drain electrode and a grid connected with the channel, wherein the source electrode and the drain electrode of the second device are metal germanosilicide, the channel is a silicon germanium alloy, at least one storage device and one logic device are arranged in the first device and the second device, the second interlayer dielectric layer covering the second device is formed, the source electrode and the drain electrode improve the emission efficiency of source end current carriers for the metal germanosilicide, the high performance of the semiconductor device is realized by combining a high mobility germanosilicide channel, the metal germanosilicide can be formed under the low-temperature process, the influence of the high-temperature process on the performance of the device is avoided, and the second interlayer dielectric layer is covered after the second device is formed, the device is formed by a single-chip three-dimensional integration technology, so that the size of the device is reduced, and the data access bandwidth and the calculation energy efficiency are improved.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram illustrating a conventional semiconductor device according to an embodiment of the present disclosure;
fig. 2 is a schematic flow chart illustrating a method for manufacturing a semiconductor device according to an embodiment of the present disclosure;
fig. 3 to 11 are schematic structural diagrams in a process of forming a semiconductor device according to a manufacturing method of an embodiment of the present application.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present application more comprehensible, embodiments accompanying the present application are described in detail below with reference to the accompanying drawings.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application, but the present application may be practiced in other ways than those described herein, and it will be apparent to those of ordinary skill in the art that the present application is not limited by the specific embodiments disclosed below.
With the development of semiconductor very large scale integrated circuits, the prior art processes have approached physical limits. Under the drive of the purpose of further miniaturization and multi-functionalization of electronic products, other new technologies, new materials and new technologies are explored, and one of the two-dimensional restrictions of the chip is removed and the chip structure is developed into a three-dimensional structure.
The micro-system integration based on the complementary metal oxide semiconductor integrated circuit is also developed from three-dimensional packaging, system-in-package and multi-chip three-dimensional system integration to single-chip three-dimensional integration, so that the volume of the micro-system is continuously reduced, the circuit delay and the power consumption are reduced, and the system performance is greatly improved.
On the other hand, information systems are moving toward high informatization and intellectualization, and are increasingly in need of larger data volume, higher read processing speed, and lower power consumption. The traditional information computing and processing system is based on a traditional civil von Neumann structure for a long time, namely, a computing chip is separated from a storage chip, data exchange is carried out through a long external connection line, and great challenges are faced on data access and storage bandwidth, computing energy efficiency and system complexity.
There is a need to structurally expand the access bandwidth, speed, and reduce transmission loss between a computing chip and a memory chip. The conventional improvement method comprises the following steps: 1) the computing and storage chips are tightly combined together through system-in-package or multi-chip three-dimensional system integration; 2) the storage and calculation integration is realized from the circuit architecture, and the storage unit and the calculation unit are integrated in the same unit in the same device process. However, the transmission distance of the method is in the micron order, and the bandwidth and the energy efficiency cannot be further improved.
Referring to fig. 1, a schematic structural diagram of a conventional three-dimensional semiconductor device is shown, which is composed of a first device 10 formed in a first interlayer dielectric layer 101 and a second device 20 formed in a second interlayer dielectric layer 102.
The first device 10 is formed on a P-well substrate 100, a shallow trench isolation region 110, an N-type heavily doped region 120 and an N-type shallow doped region 121 are formed in the substrate 100, the right N-type heavily doped region 120 and the right N-type shallow doped region 121 may be sources of the first device, the left N-type heavily doped region 120 and the left N-type shallow doped region 121 may be drains of the first device, a metal silicide 130 is formed on the N-type heavily doped region 120 and the N-type shallow doped region 121, the metal silicide 130 may be tungsten silicide or titanium silicide, etc., a first portion of a third contact, namely a first portion of the third contact is connected to the source, is formed on the right metal silicide 130 and includes a 313 "metal plug longitudinally connected to the metal silicide 130 and a 313' wiring layer connected to the 313" metal plug; meanwhile, a first portion of a fourth contact is formed on the left side metal silicide 130, that is, the first portion of the fourth contact is connected to the drain, the first portion of the fourth contact includes a 314 "metal plug longitudinally connected to the metal silicide 130, and a 314' wiring layer connected to the 314" metal plug, the metal plug and the wiring layer may be made of metal such as metal tungsten, a high-k gate dielectric layer 160 and a metal gate 161 may be formed on the substrate 100, and the two sides of the high-k gate dielectric layer 160 and the two sides of the metal gate 161 are covered with the covering layers 150.
The second device 20 includes an N-well 200, a heavily P-doped region 220 and a lightly P-doped region 221, the metal silicide 230 on the heavily P-doped region 220 and the lightly P-doped region 221, the metal silicide 230 may be tungsten silicide or titanium silicide, a first portion of the first contact is formed on the left side metal silicide 230, the first portion including a 311 "metal plug longitudinally connected to the metal silicide 230, and a 311' wiring layer connected to the 311" metal plug, while a second portion of the second contact is formed on the right side metal suicide 230, the second portion comprising a 312 "metal plug longitudinally connected to the metal suicide 230, and a 312' wiring layer connected to the 312 "metal plug, the material of the metal plug and the wiring layer may be metal such as metal tungsten, a high-k gate dielectric layer 260 and a metal gate 261 may be further formed on the N-well 200, and capping layers 250 may be covered on both sides of the high-k gate dielectric layer 260 and on both sides of the metal gate 261.
Further, the wiring layer 312 'of the second device and the wiring layer 313' of the first device may be connected by the wiring 110.
The traditional three-dimensional semiconductor device needs to activate source and drain impurities at high temperature, so that the source and drain carrier emission efficiency is high, the high performance of the device is realized, the heat dissipation of an upper layer device is poor, and the performance of the device is affected if the device is formed at high temperature, so that the performance of the device is low, therefore, the upper layer of the traditional three-dimensional semiconductor device needs to be formed at low temperature, and the source and drain cannot provide enough carriers if the device is formed at low temperature, so that the performance of the device is also low.
Therefore, how to improve the performance of the three-dimensional semiconductor device is an urgent technical problem to be solved in the field.
Based on the technical problems, the application provides a semiconductor device and a manufacturing method thereof, a first device positioned in a first interlayer dielectric layer is formed on a substrate, a second device is formed on the first interlayer dielectric layer, the second device comprises a source electrode, a drain electrode, a channel between the source electrode and the drain electrode and a grid connected with the channel, wherein the source electrode and the drain electrode of the second device are metal germanosilicide, the channel is a silicon germanium alloy, the first device and the second device at least comprise a storage device and a logic device, the second interlayer dielectric layer covering the second device is formed, the source electrode and the drain electrode improve the emission efficiency of source end current carriers for the metal germanosilicide, the high performance of the semiconductor device is realized by combining a high mobility germanosilicide channel, and the metal germanosilicide can be formed under the low-temperature process, thereby avoiding the performance of the device from being influenced by the high-temperature process, because the second interlayer dielectric layer is covered after the second device is formed, the device is formed by a single-chip three-dimensional integration technology, so that the size of the device is reduced, and the data access bandwidth and the calculation energy efficiency are improved.
Various non-limiting embodiments of the present application are described in detail below with reference to the accompanying drawings.
Exemplary method
Referring to fig. 2, a flowchart of a method for manufacturing a semiconductor device according to an embodiment of the present application includes the following steps:
s101: providing a substrate; a first device is formed on the substrate in the first interlayer dielectric layer.
In the embodiment of the present application, the first device 10 located in the first interlayer dielectric layer 101 may be formed on the substrate 100, and the first device 10 may be a conventional NMOS device, that is, an N-type Metal Oxide Semiconductor (NMOS) device. The material of the first interlayer dielectric layer 101 may be silicon oxide or silicon nitride.
Referring to fig. 3, the first device 10 is formed On a P-well substrate 100, and in the embodiment of the present application, the substrate 100 is a semiconductor substrate, and may be, for example, a Si substrate, a Ge substrate, a SiGe substrate, an SOI (Silicon On Insulator) or a GOI (Germanium On Insulator). In other embodiments, the semiconductor substrate may also be a substrate including other element semiconductors or compound semiconductors, such as GaAs, InP, SiC, or the like, may also be a stacked structure, such as Si/SiGe, or the like, and may also be other epitaxial structures, such as SGOI (silicon germanium on insulator) or the like. In the present embodiment, the substrate 100 is a bulk silicon substrate.
A shallow trench isolation region 110, an N-type heavily doped region 120 and an N-type shallow doped region 121 are formed in the substrate 100, the right N-type heavily doped region 120 and the right N-type shallow doped region 121 may be a source of a first device, the left N-type heavily doped region 120 and the left N-type shallow doped region 121 may be a drain of the first device, a metal silicide 130 is formed in the N-type heavily doped region 120 and the N-type shallow doped region 121, the metal silicide 130 may be tungsten silicide or titanium silicide, etc., a first portion of a third contact is formed on the right metal silicide 130, i.e., the first portion of the third contact is connected to the source, and includes a 313 ″ metal plug longitudinally connected to the metal silicide 130, and a 313' wiring connected to the 313 ″ metal plug; meanwhile, a first portion of a fourth contact is formed on the left side metal silicide 130, that is, the first portion of the fourth contact is connected to the drain, the first portion of the fourth contact includes a 314 "metal plug longitudinally connected to the metal silicide 130, and a 314' wiring layer connected to the 314" metal plug, the metal plug and the wiring layer may be made of metal such as metal tungsten, a high-k gate dielectric layer 160 and a metal gate 161 may be formed on the substrate 100, and the two sides of the high-k gate dielectric layer 160 and the two sides of the metal gate 161 are covered with the covering layers 150. The material of the capping layer 150 may be silicon oxide or silicon nitride.
S102: and forming a second device on the first interlayer dielectric layer. The second device comprises a source electrode, a drain electrode, a channel between the source electrode and the drain electrode of the second device and a grid electrode connected with the channel; the source electrode and the drain electrode of the second device are made of metal germanosilicide, and the channel is made of germanium-silicon alloy; the first device and the second device include at least one memory device and one logic device.
In the embodiment of the present application, a second device 30 may be formed on the first interlayer dielectric layer 101, and the second device includes a source 309, a drain 310, a channel 305 between the source and the drain of the second device, and a gate 306 connected to the channel 305; the source 309 and drain 310 of the second device are made of metal germanosilicide, and the channel 305 is made of silicon-germanium alloy; the first device 10 and said second device 30 comprise at least one memory device and one logic device.
The 309, drain 310 and channel 305 in the second device 30 may be formed by specifically: forming a semiconductor layer 303 in the active region on the first interlayer dielectric layer 101; the semiconductor layer 303 is made of germanium-silicon alloy; the active region comprises a channel region and source and drain regions on two sides of the channel region, and a semiconductor layer of the channel region is used as a channel 305 of the second device; forming a metal layer 308 on the semiconductor layer of the source and drain region, and annealing to enable the semiconductor layer of the source and drain region and the metal layer 308 to react to form metal germanosilicide; the unreacted metal layer 308 is removed to form a source 309 and a drain 310 of the second device in the source and drain regions.
Referring to fig. 4B, a semiconductor layer 303 is formed in an active region on the first interlayer dielectric layer 101, and the material of the semiconductor layer 303 is a silicon germanium alloy, and referring to fig. 4A, a semiconductor layer 303 'may be formed on the first interlayer dielectric layer 101, and then the semiconductor layer 303' outside the active region may be etched to form the semiconductor layer 303. The germanium-silicon alloy may be an alloy of single crystal silicon and single crystal germanium, an alloy of single crystal silicon and polycrystalline germanium, an alloy of polycrystalline silicon and single crystal germanium, or an alloy of polycrystalline silicon and polycrystalline germanium.
In addition, in order to form the semiconductor layer 303' on the first interlayer dielectric layer, a bonding manner may be adopted, and a deposition growth manner may also be adopted, and the embodiment of the present application is not particularly limited herein.
Specifically, taking a bonding manner as an example, as shown in fig. 5, a bonding layer 300 may be formed to form a semiconductor layer 303' on the first interlayer dielectric layer 101, and a method for forming the bonding layer 300 may be: firstly, providing an insulator silicon wafer 301, then oxidizing and thinning the top silicon to 5-10nm to obtain a thinned insulator silicon wafer 302, then extending a germanium-silicon alloy on the top silicon 302 to obtain a semiconductor layer 303', and further growing a silicon oxide layer 304 on the semiconductor layer 303 for bonding with the first interlayer dielectric layer 101. And bonding the bonding layer 300 with the first interlayer dielectric layer 101, and etching to remove the thinned silicon insulator wafer 302 after bonding, so that a semiconductor layer 303' can be formed on the first interlayer dielectric layer 101.
Referring to fig. 6, the active region includes a channel region and source and drain regions on two sides of the channel region, a semiconductor layer of the channel region serves as a channel 305 of the second device, and the channel 305 is made of a germanium-silicon alloy.
Referring to fig. 7, a metal layer 308 is formed on the semiconductor layer in the source and drain regions, and the material of the metal layer 308 may be nickel, titanium, cobalt, platinum, or the like.
In this embodiment, it should be noted that a gate electrode may be formed by using a front gate process, or a gate electrode may be formed by using a back gate process, which is not specifically limited herein, and in this application, the back gate process is taken as an example for description, see fig. 7, a dummy gate 306 and a capping layer 307 are formed on a channel before a metal layer 308 is formed by using the back gate process, and a material of the capping layer 307 may be a material such as silicon oxide or silicon nitride.
Referring to fig. 8A, annealing is performed to react the semiconductor layer of the source drain region with the metal layer 308 to form metal germanosilicide; the unreacted metal layer 308 is removed to form a source 309 and a drain 310 of the second device in the source and drain regions. The source electrode and the drain electrode are made of metal germanosilicide, wherein the metal can be nickel, titanium, cobalt, platinum or the like.
In addition, in some embodiments of the present application, P-type doping may be performed in the semiconductor layer in the source/drain region before the metal layer 308 is formed on the semiconductor layer, and the metal germanosilicide may activate doping impurities at a low temperature, so as to provide sufficient carriers to the device, thereby achieving high performance at a low temperature.
In the embodiment of the present application, if the gate last process is adopted, after the source 309 and the drain 310 are formed, as shown in fig. 9, the dummy gate 306 may be replaced with a metal gate 306 ″, and in the replacement, the dummy gate 306 may be removed first, and the high-k gate dielectric layer 306' may be formed first, and the metal gate 306 ″ may be formed on the high-k metal gate dielectric layer.
S103: and forming a second interlayer dielectric layer covering the second device.
In the embodiment of the present application, after the metal germanosilicide source and drain are formed, referring to fig. 9, a second interlayer dielectric layer 102 covering the second device may also be formed. The material of the second interlayer dielectric layer 102 may be silicon oxide or silicon nitride.
The second interlayer dielectric layer is covered after the second device is formed, so that the device is formed by a single-chip three-dimensional integration technology instead of packaging a plurality of chips together by adopting a system-in-package technology, the device size is large, the device size is reduced in the embodiment of the application, the device size can be in a nanometer level, and the data access bandwidth and the calculation energy efficiency are improved.
Referring to fig. 10, a first contact 311 penetrating the second interlayer dielectric layer 102 and connected to the source 309, a second contact 312 penetrating the second interlayer dielectric layer 102 and connected to the drain 310, a third contact 313 penetrating the first interlayer dielectric layer 101 and the second interlayer dielectric layer 102 and connected to the source of the first device 10, and a fourth contact 314 penetrating the first interlayer dielectric layer 101 and the second interlayer dielectric layer 102 and connected to the drain of the first device 10 may also be formed. In addition, a gate contact (not shown in the figure) between the first device and the second device can be formed in the embodiment of the application, so as to realize connection between the gates of the first device and the second device.
The first contact 311 is a metal plug 311 that may be connected longitudinally to the source 309 of the second device; the second contact may be a metal plug 312 connected longitudinally to the drain 310 of the second device; the third contact 313 includes a first portion 313 ' and a second portion 313 ″, where the first portions 313 ' and 313 ″ have been formed when the first device is formed, and then the second portion 313 ' ″ penetrating through the first interlayer dielectric layer and the second interlayer dielectric layer is formed; the fourth contact 314 includes a first portion and a second portion, the first portions 314 'and 314 ″ are formed when the first device is formed, and then the second portion 314' ″ penetrating through the first interlayer dielectric layer and the second interlayer dielectric layer is formed; wherein, the material of the first contact, the second contact, the third contact and the fourth contact can be metal tungsten.
In addition, in this embodiment of the application, referring to fig. 11, a wiring layer 320 may be further formed on the second interlayer dielectric layer 102 to connect the first contact 311 and the fourth contact 314, or connect the second contact 312 and the third contact 313, so as to implement intercommunication between the first device and the second device, because the first device 10 is an NMOS device, and the second device 30 is a PMOS device (P-type Metal Oxide Semiconductor, which constitutes a CMOS (Complementary Metal Oxide Semiconductor), where the material of the wiring layer may be Metal tungsten.
It should be noted that the semiconductor device in the embodiment of the present application may be a multilayer semiconductor device, which is not specifically limited herein, and a process of using the second device repeatedly in a single chip integration greater than two layers may be used, where the first device and the second device in the embodiment of the present application at least include one memory device and one logic device, and the memory and computing integration is implemented by a single chip three-dimensional integration technology, and the device scale is in a nanometer scale, so that the data access bandwidth and the computing energy efficiency are improved, the circuit delay and the power consumption are reduced, and the system performance is greatly improved.
Exemplary device
To this end, a semiconductor device of an embodiment of the present application is formed, as shown in fig. 11, including:
a first device 10 and a second device 30 stacked longitudinally; the first device 10 is located in a first interlayer dielectric layer 101 on a substrate 100, and at least one of the first device 10 and the second device 30 comprises a memory device and a logic device;
the second device 30 is located on the side of the first device 10 remote from the substrate 100,
the second device comprises a source 309, a drain 310, a channel 305 between the source and the drain of the second device, and a gate 306 "connected to the channel;
the source 309 and the drain 310 of the second device are made of metal germanosilicide, and the channel 305 is made of silicon-germanium alloy.
Further, the source 309 and the drain 310 are doped P-type.
Further, the germanium-silicon alloy is: an alloy of single crystal silicon and single crystal germanium, an alloy of single crystal silicon and polycrystalline germanium, an alloy of polycrystalline silicon and single crystal germanium, or an alloy of polycrystalline silicon and polycrystalline germanium;
the metal is: nickel, titanium, cobalt or platinum.
Further, the device further comprises:
a first contact 311 penetrating the second interlayer dielectric layer 102 and connected to the source 309 of the second device, a second contact 312 penetrating the second interlayer dielectric layer 102 and connected to the drain 312 of the second device, a third contact 313 penetrating the first interlayer dielectric layer 101 and the second interlayer dielectric layer 102 and connected to the source of the first device 10, and a fourth contact 314 penetrating the first interlayer dielectric layer 101 and the second interlayer dielectric layer 102 and connected to the drain of the first device 10.
Further, the device further comprises:
a wiring layer 320 on the second interlayer dielectric layer 102 to connect the first contact 311 and the fourth contact 314, or to connect the second contact 312 and the third contact 313.
The embodiment of the application provides a semiconductor device and a manufacturing method thereof, a substrate is provided, a first device positioned in a first interlayer dielectric layer is formed on the substrate, a second device is formed on the first interlayer dielectric layer, the second device comprises a source electrode, a drain electrode, a channel between the source electrode and the drain electrode and a grid connected with the channel, wherein the source electrode and the drain electrode of the second device are metal germanosilicide, the channel is a silicon germanium alloy, at least one storage device and one logic device are arranged in the first device and the second device, the second interlayer dielectric layer covering the second device is formed, the source electrode and the drain electrode improve the emission efficiency of source end current carriers for the metal germanosilicide, the high performance of the semiconductor device is realized by combining a high mobility germanosilicide channel, the metal germanosilicide can be formed under the low-temperature process, the influence of the high-temperature process on the performance of the device is avoided, and the second interlayer dielectric layer is covered after the second device is formed, the device is formed by a single-chip three-dimensional integration technology, so that the size of the device is reduced, and the data access bandwidth and the calculation energy efficiency are improved.
The embodiments in the present specification are described in a progressive manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, for device embodiments, since they are substantially similar to method embodiments, they are described relatively simply, and reference may be made to some descriptions of the method embodiments for relevant points.
The foregoing is merely a preferred embodiment of the present application and, although the present application discloses the foregoing preferred embodiments, the present application is not limited thereto. Those skilled in the art can now make numerous possible variations and modifications to the disclosed embodiments, or modify equivalent embodiments, using the methods and techniques disclosed above, without departing from the scope of the claimed embodiments. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present application still fall within the protection scope of the technical solution of the present application without departing from the content of the technical solution of the present application.

Claims (10)

1. A method of manufacturing a semiconductor device, comprising:
providing a substrate; a first device positioned in the first interlayer dielectric layer is formed on the substrate;
forming a second device on the first interlayer dielectric layer; the second device comprises a source electrode, a drain electrode, a channel between the source electrode and the drain electrode of the second device and a grid electrode connected with the channel; the source electrode and the drain electrode of the second device are made of metal germanosilicide, and the channel is made of germanium-silicon alloy; the first device and the second device comprise at least one memory device and one logic device;
and forming a second interlayer dielectric layer covering the second device.
2. The method of claim 1, wherein the source, drain and channel in the second device are formed by:
forming a semiconductor layer in the active region on the first interlayer dielectric layer; the semiconductor layer is made of germanium-silicon alloy; the active region comprises the channel region and source and drain regions on two sides of the channel region, and a semiconductor layer of the channel region is used as a channel of the second device;
forming a metal layer on the semiconductor layer of the source drain region, and annealing to enable the semiconductor layer of the source drain region and the metal layer to react to form metal germanosilicide;
and removing the unreacted metal layer to form a source electrode and a drain electrode of the second device in the source and drain regions.
3. The method of claim 2, wherein before forming the metal layer on the semiconductor layer of the source and drain regions, the method further comprises:
and carrying out P-type doping in the semiconductor layer of the source drain region.
4. The method of any of claims 1-3, wherein the silicon germanium alloy comprises: an alloy of monocrystalline silicon and monocrystalline germanium, an alloy of monocrystalline silicon and polycrystalline germanium, an alloy of polycrystalline silicon and monocrystalline germanium, or an alloy of polycrystalline silicon or polycrystalline germanium; the metal includes: nickel, titanium, cobalt or platinum.
5. The method according to any one of claims 1-3, further comprising:
forming a first contact which penetrates through the second interlayer dielectric layer and is connected with the source electrode of the second device, a second contact which penetrates through the second interlayer dielectric layer and is connected with the drain electrode of the second device, a third contact which penetrates through the first interlayer dielectric layer and the second interlayer dielectric layer and is connected with the source electrode of the first device, and a fourth contact which penetrates through the first interlayer dielectric layer and the second interlayer dielectric layer and is connected with the drain electrode of the first device.
6. The method of claim 5, further comprising:
and forming a wiring layer on the second interlayer dielectric layer to connect the first contact and the fourth contact or connect the second contact and the third contact.
7. A semiconductor device, comprising: a first device and a second device stacked vertically; the first device is positioned in a first interlayer dielectric layer on a substrate, the second device is positioned in a second interlayer dielectric layer, and at least one of the first device and the second device comprises a storage device and a logic device;
the second device is positioned on one side of the first device far away from the substrate;
the second device comprises a source electrode, a drain electrode, a channel between the source electrode and the drain electrode of the second device and a grid electrode connected with the channel;
the source electrode and the drain electrode of the second device are made of metal germanosilicide, and the channel is made of germanium-silicon alloy.
8. The device of claim 7, comprising: and the source electrode and the drain electrode of the second device are doped in a P type mode.
9. The device according to any of claims 7-8, comprising: the germanium-silicon alloy comprises: an alloy of single crystal silicon and single crystal germanium, an alloy of single crystal silicon and polycrystalline germanium, an alloy of polycrystalline silicon and single crystal germanium, or an alloy of polycrystalline silicon and polycrystalline germanium; the metal is: nickel, titanium, cobalt or platinum.
10. The device according to any of claims 7-8, further comprising:
the first contact penetrates through the second interlayer dielectric layer and is connected with the source electrode of the second device, the second contact penetrates through the second interlayer dielectric layer and is connected with the drain electrode of the second device, the third contact penetrates through the first interlayer dielectric layer and the second interlayer dielectric layer and is connected with the source electrode of the first device, and the fourth contact penetrates through the first interlayer dielectric layer and the second interlayer dielectric layer and is connected with the drain electrode of the first device.
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