CN113353896A - Ag with superplasticity2Se nano superfine crystal thermoelectric material - Google Patents
Ag with superplasticity2Se nano superfine crystal thermoelectric material Download PDFInfo
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Abstract
The invention discloses Ag with superplasticity2The phase structure of the Se nanometer ultrafine crystal thermoelectric material is a single low-temperature orthogonal phase, the crystal grain appearance is uniform isometric crystal, the average crystal grain size is between 0 and 200nm, and the size fluctuation range is within 50 nm. Ag having such characteristics in the present invention2The Se nano ultra-fine crystal thermoelectric material can be obtained by grinding-ball milling-cold pressing or grinding-heat treatment-cold pressing and other preparation processes, thereby reaching Ag2Potential superplasticity requirement of Se nanometer ultrafine crystal thermoelectric material. The superplastic deformation conditions of the material are as follows: the deformation temperature is below the phase change point (407K), 60-120 ℃, and the strain rate is 10‑5‑10‑4s‑1In the meantime. Under this condition, the above material can realize excellent superplastic deformation with a compressive strain exceeding 80% without any significant failure. The invention discloses Ag with superplasticity2The Se nano ultrafine crystal thermoelectric material skillfully solves the problem of Ag2The mechanical property of the Se material is poor,Poor deformation resistance, poor reliability and the like.
Description
Technical Field
The invention belongs to the technical field of preparation of flexible inorganic semiconductor materials, and particularly relates to superplastic Ag2A method for preparing Se nanometer ultrafine crystal block material.
Background
In the field of material science, transition metal chalcogenide has attracted extensive interest of researchers due to its special photoelectric properties and chemical characteristics, which in turn has driven the development of transition metal chalcogenide preparation technology. Of the numerous transition metal chalcogenides, the compound Ag2Se has been one of the substances that has received a great deal of attention. Ag2Se is a narrow energy gap semiconductor material that undergoes a reversible phase transition, i.e., a transition from a low temperature orthogonal phase to a high temperature cubic phase, around 131 ℃ (407K). Before and after phase transition, Ag2The electrical transport properties of Se are significantly mutated due to a significant change in band structure. So that the compound can be applied to the manufacture of photonic crystals with thermally switchable stop bands.
Research shows that the low-temperature orthorhombic phase Ag2Se can change the giant magnetoresistance effect to a temperature that is so significant that it can be observed at room temperature. Ag2The Se semiconductor material also occupies a very important position in the field of thermal-electric energy conversion, and belongs to an excellent bulk material. Using the theory of bulk transformation, Ag2The Se block material can directly convert industrial and domestic waste heat into electric energy, has the advantages of no transmission part, small volume, no noise, no pollution, good reliability and the like, and has huge application prospect in the fields of automobile waste heat recycling, industrial waste heat power generation and the like. High temperature phase Ag2Se belongs to the fast ion conductor, when Ag2When Se is in a high-temperature phase above 407K, the crystal structure of the compound is composed of a set of hard crystal lattices composed of Se atoms and a set of soft crystal lattices composed of Ag atoms. The Se atom lattice is a body-centered cubic structure, and Ag ions can freely migrate in a framework composed of Se atoms, so that the compound is called a fast ion conductor, also called a solid electrolyte, because of its excellent conductivity. High temperature phase Ag2Se is widely applied to the industrial fields of electronics, energy, electromechanical integration and the like.
At present, Ag2Se block materials are synthesized by chemical methods, solid-phase sintering methods, composite synthesis processes, even pulse magnetron sputtering and other special processes, which are all accompanied with chemical pollution, toxicity, harm, poor performance, poor reliability and other problems. For example, chemical synthesisOften accompanied with the problems of toxicity, time consumption, energy consumption, environmental pollution and the like, the solid phase sintering method also has the problems of energy consumption, component loss, structural deviation and the like. The grinding synthesis method is simple and convenient in time saving, but has the prominent problems of poor mechanical property, high brittleness, uneven structure size and the like. The superplastic forming pressure is small, the working procedures are few, the precision forming can be realized, the formed part has good quality, and the like, and the superplastic forming device has the characteristics of light weight and high hardness, and is widely applied to the fields of aerospace, traffic, building, electronics and the like. At present, no Ag with superplasticity is reported2Se nano ultrafine crystal thermoelectric material and a preparation method thereof.
Disclosure of Invention
The technical problem to be solved by the invention is to provide Ag with superplasticity aiming at the defects of the prior art2Se nano ultra-fine grain thermoelectric material has excellent superplasticity performance and solves the problem of Ag2The Se bulk semiconductor material has poor mechanical property.
The technical scheme adopted by the invention for solving the problems is as follows:
ag with superplasticity2The Se nano ultrafine crystal thermoelectric material comprises Ag and Se in a stoichiometric ratio of 2: 1, the phase structure is low-temperature orthorhombic Ag2Se, and the phase composition is single, and no mixed phase exists; the crystal grains are uniform isometric crystals, the average crystal grain size is between 0 and 200nm, and the fluctuation range of the crystal grain size is within 50 nm.
According to the scheme, the relative density of the blocks of the thermoelectric material is not less than 98%, the temperature range of the super plastic deformation is 60-120 ℃, and the strain rate is 10-5-10-4s-1。
Ag having the above characteristics2The compression property of the Se bulk material can reach superplasticity, the deformation temperature condition is required to be between 60 and 120 ℃, for example 80 ℃, and the strain rate is 2.7 multiplied by 10-5s-1In the case of the material, the compressive strain of the compression sample prepared from the material exceeded 80%, and the entire sample did not suffer from any failure such as cracking or peeling. Higher temperatures below the phase transition point help large deformations occur, and lower strain rates avoid stress concentrationsCracks are initiated if the crack is not eliminated in time, and the crack is propagated and then damaged.
In the above scheme, Ag2The stoichiometric ratio of Se is strictly 2: 1, the single phase composition is ensured, and the introduction of impurities is avoided. Uniform nano equiaxed crystal with average crystal grain size of 0-200nm and distribution range of less than 50nm, and is favorable to large deformation2The essential condition of the superplasticity performance of the Se nanometer ultrafine crystal thermoelectric material.
The invention also provides two kinds of Ag with superplasticity2The preparation method of the Se nano ultrafine crystal thermoelectric material comprises the steps of taking Ag powder and Se powder with a molar ratio of (2: 1) as raw materials, and preparing the Ag with superplasticity through a grinding-ball milling or grinding-heat treatment process2Se nanometer ultrafine crystal thermoelectric material powder. Ag with superplasticity2Se nanometer ultrafine crystal thermoelectric material powder can also be subjected to cold press molding to obtain Ag with superplasticity2Se nanometer ultrafine crystal thermoelectric material block.
Specifically, the Ag with superplasticity is prepared by adopting the process of grinding-heat treatment-cold pressing2The Se nanometer ultrafine crystal thermoelectric material comprises the following specific steps:
1) the molar ratio (2: 1) mixing and grinding Ag powder and Se powder until XRD phase analysis is a low-temperature orthogonal single phase;
2) weighing the powder obtained in the step 1), sealing in vacuum, and then carrying out heat treatment; the heat treatment temperature is 100-2Se nano ultrafine crystal thermoelectric material powder;
3) taking out the Ag with superplasticity obtained in the step 2)2Se nano ultra-fine grain thermoelectric material powder is formed by cold pressing to obtain a block body with relative density not less than 98 percent, namely Ag with superplasticity2Se nanometer ultrafine crystal thermoelectric material block. The pressure of cold press molding is 600-800MPa, the time is 5-8min, and the temperature is room temperature.
Specifically, the Ag with superplasticity is prepared by adopting a grinding-ball milling-cold pressing process2The Se nanometer ultrafine crystal thermoelectric material comprises the following specific steps:
1) the molar ratio of the compound to the standard molar ratio (2: 1) grinding Ag powder and Se powder to obtain Ag2Se single-phase orthogonal powder;
2) weighing the powder obtained in the step 1), performing wet ball milling, and drying to obtain the Ag with superplasticity2Se nano ultrafine crystal thermoelectric material powder;
3) the Ag with superplasticity obtained after wet ball milling2Cold press molding Se nanometer ultrafine crystal thermoelectric material powder to obtain Ag with superplasticity2Se nanometer ultrafine crystal thermoelectric material block. The pressure range of cold press molding is 600-800MPa, the time is 5-8min, and the temperature is generally room temperature. Wherein, the ball-material ratio of the wet ball milling is 6-10: 1, the rotating speed is 400-500r/min, and the time is 20-40 min; the mass ratio of the ration amount of the single ethanol in the wet ball milling to the single ball milling amount is preferably (3-4): 8.
in the two preparation methods, the purity of the Ag powder and the Se powder is not lower than 99 percent, and the grain diameters are both micron-sized.
Based on the above, other modifications, substitutions and alterations can be made to the present invention without departing from the basic technical idea of the invention, based on the common technical knowledge and means in the field.
Compared with the prior art, the invention has the beneficial effects that:
1) the invention discloses Ag with superplasticity for the first time2Se nanometer ultrafine crystal thermoelectric material is prepared by obtaining uniform nanometer equiaxed crystal and Ag with higher relative density2Se nanometer ultrafine crystal thermoelectric material has potential superplasticity performance.
2) The Ag with superplasticity of the invention2The temperature of the Se nano ultrafine crystal thermoelectric material for generating superplastic compression deformation is between 60 and 120 ℃, and the strain rate is not more than 10-5-10-4s-1。
3) The Ag with superplasticity of the invention2The Se nanometer ultrafine crystal thermoelectric material is very suitable for forming parts with complex shapes or structures, can enhance the temperature deformation resistance, pressure deformation resistance and other capabilities of materials or devices, improves the stability and reliability of the materials or the devices, and can greatly prolong the productsService life of.
Drawings
FIG. 1 is an XRD pattern of the product obtained in example 1.
FIG. 2 shows Ag obtained after ball milling in step 3) of example 12FESEM photograph of Se powder.
FIG. 3 shows Ag obtained after cold pressing in step 4) of example 12FESEM photograph of the interior of Se bulk.
FIG. 4 shows Ag obtained in step 4) of example 12The Se bulk has superplastic compression performance at 80 ℃.
FIG. 5 shows Ag obtained in step 4) of example 12FESEM photograph of a superplastic compression cross section of a Se block at 80 ℃.
Figure 6 is an XRD pattern of the product obtained in example 2.
FIG. 7 shows Ag obtained after ball milling in step 3) of example 22FESEM photograph of Se powder.
FIG. 8 shows Ag obtained in step 4) of example 2 after cold pressing2FESEM photograph of the interior of Se bulk.
FIG. 9 shows the superplastic compression behaviour at 80 ℃ of the product obtained in step 4) of example 2.
FIG. 10 is a FESEM photograph of a superplastic compression cross section at 80 ℃ of the product obtained in step 4) of example 2.
Detailed Description
In order to better understand the present invention, the following examples are further provided to illustrate the content of the present invention, but the content of the present invention is not limited to the following examples.
In the following examples, Ag powder used was a Chinese medicine product with a purity of 3N, and Se powder was an Allantin product with a purity of 4N.
For the technical scheme of the invention, the low-temperature orthogonal Ag with the average grain size of 0-200nm and the grain size fluctuation range is prepared by other synthesis processes2Se material can also realize the technical scheme of the invention. The temperature range of the superplastic deformation is 60-120 ℃, and the strain rate is 10-5-10-4s-1The technical scheme of the invention can be realized.
Example 1
A kind ofAg with superplasticity2The preparation method of the Se nanometer ultrafine crystal block material comprises the following specific steps:
1) ag powder and Se powder are used as raw materials, and the weight ratio of the Ag powder to the Se powder is (2: 1) the molar ratio of (a) to (b) is weighed to total 8 g;
2) respectively placing the raw materials weighed in the step 1) in an agate mortar, mixing and grinding until XRD phase analysis shows that the raw materials are low-temperature orthogonal single phases;
3) weighing 8g of the powder obtained in the step 2), and then adding 8: 1, weighing a proper amount of stainless steel alloy ball-milling steel balls according to the ball-to-material ratio, then weighing an alcohol solution to immerse the ball materials, sealing and tightly packing the ball materials, wherein the ball-milling time is 30 min; then taking out the sample, separating the ball mill body, the material and the alcohol solution, and then placing the material at room temperature for air drying;
4) mechanically compacting the powder obtained in the step 3) in a cold pressing mode to obtain a block body with the relative density not less than 98%, namely the Ag with superplasticity2Se nanometer ultrafine crystal block material.
The products obtained in this example were subjected to phase analysis, and as shown in FIG. 1, all the products were orthogonal single-phase Ag2Se compound without any hetero phase. And FIGS. 2 and 3 are respectively a microscopic morphology graph of the powder obtained after ball milling in the step 3) and the block obtained by cold pressing in the step 4), wherein the morphology of crystal grains of the powder after ball milling tends to isometric crystal, the crystal form is better, the crystal boundary is clear, no obvious defect exists, and the average crystal grain size is about 50 nm. The grain size distribution of the cold-pressed blocks is basically the same as that of the powder obtained after ball milling, the statistical distribution range is between 40 and 60nm, and the average grain size is about 50 nm. The uniform fine grain structure can effectively promote the migration, climbing or rotation of crystal grains of the grain boundary, so that the stress of different areas in the deformation process is basically uniform. The relative density of the block is tested to be more than 98% according to the Archimedes drainage method, so that the compactness of the structure is ensured, and the damage of the sample in the early stage of deformation caused by the defects of a large number of gaps, holes, cracks and the like due to the poor compactness of the sample in the deformation process is avoided.
Cutting, grinding, polishing and cleaning the block obtained in the example 1 to obtain a standard compression sample, and then performing superplastic compressionAnd (6) testing. The present embodiment uses a dimension of 6X 3mm3The square sample was tested at a deformation temperature of 80 ℃ and a strain rate of 2.7X 10-5s-1. As shown in fig. 4, the change of the stress-strain curve indicates that the sample compression ratio exceeds 80%, the compressive strength reaches 400MPa or more, and the change trend of the stress-strain curve still continues to rise. Analysis of the cross-section FESEM photograph taken in conjunction with fig. 5 shows that the sample is free of significant cracking. The reason for this is when Ag2The average grain size of the Se block is less than 200nm, even reaches 50nm, the grain size distribution range is narrow, grain boundaries are increased, grain boundary migration and grain rotation are relatively easy, and the crushing phenomenon caused by inconsistent deformation of different areas is avoided, so that the superfine grain structure meets the requirements of materials with superplastic deformation. The deformation temperature is 80 ℃ and the strain rate is low, which greatly contributes to the occurrence of superplastic deformation.
Example 2
Superplastic Ag2The preparation method of the Se nanometer ultrafine crystal block material comprises the following specific steps:
1) ag powder and Se powder are used as raw materials, and the weight ratio of the Ag powder to the Se powder is (2: 1) the molar ratio of (a) to (b) is weighed to total 8 g;
2) respectively placing the raw materials weighed in the step 1) in an agate mortar, mixing and grinding until XRD phase analysis shows that the raw materials are low-temperature orthogonal single phases;
3) weighing 8g of the powder obtained in the step 2), putting the powder into a quartz glass tube which is baked cleanly, putting a glass plug into the quartz glass tube, sealing the quartz glass tube in vacuum, then carrying out powder heat treatment in an oven, wherein the heat treatment temperature is 120 ℃, the time is 48 hours, and after the heat treatment is finished, sampling and air-cooling the powder to the room temperature;
4) taking out the heat treatment powder obtained in the step 3), and mechanically compacting by adopting a cold pressing mode to obtain a block body with the relative density not less than 98%, namely the Ag with superplasticity2Se nanometer ultrafine crystal thermoelectric material block.
The products obtained in this example were subjected to phase analysis, and all the products were orthorhombic phase Ag, as shown in FIG. 62A Se compound. FIGS. 7-8 are photographs of the micro-morphology of the heat-treated powder of step 3) and the block obtained in step 4), respectively, heatThe grain size of the treated powder and the cold-pressed block is about 130nm, and the distribution range of the grain size is between 100 nm and 150 nm. Through the heat treatment process, the grain size is kept in a nanometer scale, the grain boundary is clear, the grain distribution is more uniform, and the relative density of the sample is more than 98%.
And cutting, grinding, polishing and cleaning the block obtained in the example 2 to obtain a standard compression sample, and then carrying out a superplastic compression test. The present embodiment uses a dimension of 6X 3mm3The stress-strain curve shown in FIG. 9 shows that the strain rate is 2.7X 10 when the deformation temperature is 80 deg.C-5s-1The compression ratio of the sample can still exceed 80 percent, the compression strength is close to 500MPa, and the curve has obvious rising trend when the strain reaches about 80 percent, which shows that for Ag2For Se nano ultra-fine grain thermoelectric material, the super plasticity performance is far more than 80% of strain, and the possibility is further increased. The morphology analysis of the cross section is carried out in combination with fig. 10, and no obvious crack is observed in the sample except for the rough fracture caused by the sample preparation process of taking the FESEM picture, and no obvious crack propagation trace is observed in the sample. For this reason, the average grain size of the polish-heat-cold-pressed sample is 130nm, and the size distribution ranges between 100 nm and 150nm, and the structure itself is beneficial to continuous deformation. The powder sample after heat treatment ensures the nanoscale structure, leads the crystal form to be more regular and complete, has narrower distribution range of the grain size, ensures the relative compactness of the cold-pressed block to reach more than 98 percent, obviously optimizes the overall appearance of the sample, greatly reduces the deformation obstacles such as stress concentration and the like in the deformation process, and can also realize Ag by the process2The super plasticity of Se nanometer superfine crystal thermoelectric material.
The above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, many modifications and changes can be made without departing from the inventive concept of the present invention, and these modifications and changes are within the protection scope of the present invention.
Claims (10)
1. Ag with superplasticity2Se nano superfine powderThe crystalline thermoelectric material is characterized in that the phase structure is low-temperature orthorhombic Ag2Se, crystal grains are uniform isometric crystals, the average crystal grain size is between 0 and 200nm, and the size fluctuation range is within 50 nm.
2. Ag with superplasticity according to claim 12Se nano ultra-fine grain thermoelectric material is characterized in that the grain size range is between 40 nm and 60nm or between 80 nm and 130 nm.
3. Ag with superplasticity according to claim 12The Se nanometer superfine crystal thermoelectric material is characterized in that the deformation temperature range of the super-plastic compression deformation is 60-120 ℃, and the strain rate is 10-5-10-4s-1。
4. Ag having superplasticity as claimed in claim 12The preparation method of the Se nano ultrafine crystal thermoelectric material is characterized in that Ag powder and Se powder with a molar ratio of 2: 1 are used as raw materials, and the Ag with superplasticity is prepared through the steps of grinding-wet ball milling or grinding-heat treatment2Se nanometer ultrafine crystal thermoelectric material powder.
5. Ag having superplasticity as claimed in claim 12The preparation method of the Se nano ultrafine crystal thermoelectric material is characterized in that Ag powder and Se powder with a molar ratio of 2: 1 are used as raw materials, and the Ag powder with superplasticity is prepared through the steps of grinding, wet ball milling, cold pressing or grinding, heat treatment and cold pressing2Se nanometer ultrafine crystal thermoelectric material block.
6. Ag having superplasticity as claimed in claim 12The preparation method of the Se nanometer ultrafine crystal thermoelectric material is characterized by comprising the following steps:
1) the molar ratio (2: 1) mixing and grinding Ag powder and Se powder until XRD phase analysis is an orthogonal single phase;
2) weighing the powder obtained in the step 1), sealing in vacuum, and then carrying out heat treatment to obtain the Ag with superplasticity2Se NaThe nanometer ultrafine crystal thermoelectric material powder.
7. Superplastic Ag according to claim 62The preparation method of the Se nanometer ultrafine crystal thermoelectric material is characterized by further comprising a step 3) after the step 2), wherein the step 3) is specifically as follows: the heat treatment powder obtained in the step 2) is formed in a cold pressing mode to obtain a block body with the relative density not lower than 98%, namely the Ag with superplasticity2Se nanometer ultrafine crystal thermoelectric material block.
8. Ag with superplasticity according to claim 62The preparation method of the Se nanometer ultrafine crystal thermoelectric material is characterized in that the heat treatment temperature in the step 2) is 100-120 ℃, and the heat preservation time is 48-72 h.
9. Superplastic Ag according to claim 62The preparation method of the Se nanometer ultrafine crystal thermoelectric material is characterized in that the pressure of cold press molding is 600-800MPa, and the time is 5-8 min.
10. Superplastic Ag according to claim 52The preparation method of the Se nanometer ultrafine crystal thermoelectric material is characterized in that the purity of Ag powder and Se powder is not lower than 99 percent, and the grain sizes are both micron-sized.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01117214A (en) * | 1987-10-30 | 1989-05-10 | Hitachi Ltd | Electrode for vacuum circuit-breaker |
| CN103910339A (en) * | 2014-01-20 | 2014-07-09 | 武汉理工大学 | Ultrafast preparation method of high-performance BiCuSeO-based blocky thermoelectric material having nanometer layered structure |
| CN105256161A (en) * | 2015-11-04 | 2016-01-20 | 武汉理工大学 | Unfired densification preparation process of Ag2Se block thermoelectric material |
| CN109585638A (en) * | 2018-11-30 | 2019-04-05 | 武汉理工大学 | One kind having room temperature inorganic thermo-electric device flexible and preparation method thereof |
| CN109806891A (en) * | 2019-03-25 | 2019-05-28 | 东华大学 | A kind of Ag2The preparation method and application of Se/GO micro-flowers structure nano material |
| CN110114439A (en) * | 2016-10-28 | 2019-08-09 | 奈科斯多特股份公司 | Glass composite particles and application thereof |
-
2020
- 2020-03-04 CN CN202010142603.0A patent/CN113353896A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01117214A (en) * | 1987-10-30 | 1989-05-10 | Hitachi Ltd | Electrode for vacuum circuit-breaker |
| CN103910339A (en) * | 2014-01-20 | 2014-07-09 | 武汉理工大学 | Ultrafast preparation method of high-performance BiCuSeO-based blocky thermoelectric material having nanometer layered structure |
| CN105256161A (en) * | 2015-11-04 | 2016-01-20 | 武汉理工大学 | Unfired densification preparation process of Ag2Se block thermoelectric material |
| CN110114439A (en) * | 2016-10-28 | 2019-08-09 | 奈科斯多特股份公司 | Glass composite particles and application thereof |
| CN109585638A (en) * | 2018-11-30 | 2019-04-05 | 武汉理工大学 | One kind having room temperature inorganic thermo-electric device flexible and preparation method thereof |
| CN109806891A (en) * | 2019-03-25 | 2019-05-28 | 东华大学 | A kind of Ag2The preparation method and application of Se/GO micro-flowers structure nano material |
Non-Patent Citations (2)
| Title |
|---|
| DONGWANG YANG ET AL: ""Facile room temperature solventless synthesis of high thermoelectric performance Ag2Se via a dissociative adsorption reaction"", 《JOURNAL OF MATERIALS CHEMISTRY A》 * |
| 肖育江: ""半导体金属硫化物、硒化物纳米材料的制备和表征"", 《中国优秀硕士学位论文全文数据库工程科技Ⅰ辑》 * |
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