CN113346752A - Isolated high-frequency double-active-bridge converter based on gallium nitride device - Google Patents

Isolated high-frequency double-active-bridge converter based on gallium nitride device Download PDF

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Publication number
CN113346752A
CN113346752A CN202010630899.0A CN202010630899A CN113346752A CN 113346752 A CN113346752 A CN 113346752A CN 202010630899 A CN202010630899 A CN 202010630899A CN 113346752 A CN113346752 A CN 113346752A
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China
Prior art keywords
circuit
port
voltage
bridge
power supply
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CN202010630899.0A
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Chinese (zh)
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官权学
何元烈
冯君璞
雷雯霆
龙江游
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Guangdong University of Technology
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Guangdong University of Technology
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Priority to CN202010630899.0A priority Critical patent/CN113346752A/en
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
    • H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
    • H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
    • H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
    • H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/33569—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements
    • H02M3/33576—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements having at least one active switching element at the secondary side of an isolation transformer
    • H02M3/33584—Bidirectional converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
    • H02M1/092—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices the control signals being transmitted optically
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inverter Devices (AREA)

Abstract

The invention discloses an isolated high-frequency double-active-bridge converter based on a gallium nitride device, which comprises: the high-voltage three-phase full-bridge circuit module, the low-voltage three-phase full-bridge circuit module, the three-phase energy transfer inductor, the three-phase high-frequency coaxial transformer and the DSP module; the isolated high-frequency double-active-bridge converter provided by the invention has a symmetrical and simple structure, wherein the power electronic switch adopts a gallium nitride power device, so that the switching frequency of the double-active-bridge converter can be increased to the range of 100kHz-1MHz, and the three-phase high-frequency coaxial transformer adopts a coaxial structure, so that the volume and the weight of passive elements are reduced, the electromagnetic interference is reduced, the power density of the converter is improved, the electric energy can be transmitted in two directions, and the transmission direction can be switched rapidly. The embodiment of the invention can provide high-frequency switching frequency and high power density in the application occasion with strict limitation on volume and weight, and solves the technical problems of relatively low switching frequency and large volume and weight of the traditional double-active-bridge converter in the prior art.

Description

Isolated high-frequency double-active-bridge converter based on gallium nitride device
Technical Field
The invention relates to the field of power electronic conversion circuits, in particular to an isolated high-frequency double-active-bridge converter based on a gallium nitride device.
Background
A double-Active-Bridge (DAB) DC-DC bidirectional converter is composed of a transformer and two H-Bridge full-Bridge circuits, wherein the full-Bridge circuits invert direct-current voltage into bipolar alternating-current rectangular wave, the two alternating-current voltages are applied to the transformer and an inductor, and the magnitude and the direction of energy transmission are controlled through phase-shifting control. The double-active-bridge direct-current converter is symmetrical and simple in structure, can realize electrical isolation between two levels, bidirectional energy flow and zero-voltage device switching, and is suitable for application occasions of new energy power generation systems, aviation power supply systems, direct-current uninterruptible power supply systems, electric vehicle energy management systems, multi-port hybrid power supply systems, data centers, power electronic transformers and the like.
The transformer in a dual active bridge DC-DC bi-directional converter not only provides the necessary electrical isolation but also primarily determines the size and weight of the converter, with the higher the operating frequency of the switching devices in this topology, the smaller the transformer required and the lighter the weight. However, most of the conventional dual-active-bridge converters are built by silicon devices, the switching frequency is relatively low, generally below 20kHz, and the size and weight of the transformer connecting the two H-bridge circuits are large.
In summary, in the prior art, the conventional dual-active-bridge converter is built by using silicon devices, and the technical problems of relatively low switching frequency and large volume and weight exist.
Disclosure of Invention
The invention provides an isolated high-frequency double-active-bridge converter based on a gallium nitride device, which is used for solving the technical problems of relatively low switching frequency and large volume and weight of the traditional double-active-bridge converter built by adopting a silicon device in the prior art.
The invention provides an isolated high-frequency double-active-bridge converter based on a gallium nitride device, which comprises: the high-voltage three-phase full-bridge circuit module, the low-voltage three-phase full-bridge circuit module, the three-phase energy transfer inductor, the three-phase high-frequency coaxial transformer and the DSP module; the high-voltage three-phase full-bridge circuit module comprises a first three-phase full-bridge circuit formed by gallium nitride high-voltage switching devices, and the low-voltage three-phase full-bridge circuit module comprises a second three-phase full-bridge circuit formed by gallium nitride low-voltage switching devices;
the alternating current end of first three-phase full-bridge circuit with the first port of three-phase biography ability inductance is connected, the second port of three-phase biography ability inductance with the primary winding of three-phase high frequency coaxial transformer is connected, the secondary winding of three-phase high frequency coaxial transformer with the alternating current end of second three-phase full-bridge circuit is connected, the second port of first three-phase full-bridge circuit and the second port of second three-phase full-bridge circuit all are connected with the DSP module.
Preferably, the high-voltage three-phase full-bridge circuit module comprises a first power circuit board and a first control circuit board which are connected through a signal stand column, wherein the first power circuit board is provided with a first three-phase full-bridge circuit and a first gate drive circuit, and the first control circuit board is provided with a first logic control circuit and a first isolator;
the first port of the first gate drive circuit is connected with the first port of the first logic control circuit through the signal upright post and the first isolator, the second port of the first gate drive circuit is connected with the gate of the gallium nitride high-voltage switch device in the first three-phase full-bridge circuit, and the second port of the first logic control circuit is connected with the DSP module;
the low-voltage three-phase full-bridge circuit module comprises a second power circuit board and a second control circuit board which are connected through a signal stand column, wherein a second three-phase full-bridge circuit and a second gate drive circuit are arranged on the second power circuit board, and a second logic control circuit and a second isolator are arranged on the second control circuit board;
and a first port of the second gate driving circuit is connected with a first port of a second logic control circuit through a signal upright post and a second isolator, a second port of the second gate driving circuit is connected with a gate pole of a gallium nitride low-voltage switch device in a second three-phase full-bridge circuit, and a second port of the second logic control circuit is connected with the DSP module.
Preferably, the first power circuit board further comprises a first overcurrent voltage measuring circuit, a first temperature measuring circuit and a first emergency protection circuit; the first port of the first overcurrent voltage measuring circuit, the first port of the first temperature measuring circuit and the first port of the first emergency protection circuit are connected with the alternating current port and the direct current port of the bridge arm of the first three-phase full-bridge circuit; the second port of the first overcurrent voltage measuring circuit and the second port of the first temperature measuring circuit are both connected with the DSP module, and the second port of the first emergency protection circuit is connected with the first gate drive circuit;
the second power circuit board further comprises a second overcurrent voltage measuring circuit, a second temperature measuring circuit and a second emergency protection circuit; the first port of the second overcurrent voltage measuring circuit, the first port of the second temperature measuring circuit and the first port of the second emergency protection circuit are connected with the alternating current port and the direct current port of the bridge arm of the second three-phase full-bridge circuit; a second port of the second overcurrent voltage measuring circuit and a second port of the second temperature measuring circuit are connected with the DSP module; the second port of the second emergency protection circuit is connected with the second gate drive circuit.
Preferably, the first overcurrent-voltage measuring circuit includes a first bridge arm current sensor, a first comparison circuit, and a first or gate logic circuit; the output end of the first bridge arm current sensor is connected with the input end of a first comparison circuit, the output end of the first comparison circuit is connected with the input end of a first OR gate logic circuit, and the output end of the first OR gate logic circuit is connected with the input end of a first gate drive circuit;
the second overcurrent voltage and current measuring circuit comprises a second bridge arm current sensor, a second comparison circuit and a second OR gate logic circuit; the output end of the second bridge arm current sensor is connected with the input end of a second comparison circuit, the output end of the second comparison circuit is connected with the input end of a second OR gate logic circuit, and the output end of the second OR gate logic circuit is connected with the input end of a second gate driving circuit.
Preferably, the first overcurrent voltage measurement circuit further includes a first direct-current voltage sensor, a first voltage precision operational amplifier circuit, and a first direct-current sensor, an output end of the first direct-current voltage sensor is connected to an input end of the first voltage precision operational amplifier circuit, and an output end of the first voltage precision operational amplifier circuit and an output end of the first direct-current sensor are both connected to the DSP module;
the second overcurrent and voltage measuring circuit further comprises a second direct-current voltage sensor, a second voltage precise operational amplifier circuit and a second direct-current sensor, wherein the output end of the second direct-current voltage sensor is connected with the input end of the second voltage precise operational amplifier circuit, and the output end of the second voltage precise operational amplifier circuit and the output end of the second direct-current sensor are both connected with the DSP module.
Preferably, the first temperature measuring circuit comprises a first temperature sensor, a first temperature comparison circuit and a third or gate logic circuit; the output end of the first temperature sensor is connected with the input end of a first temperature comparison circuit, the output end of the first temperature comparison circuit is connected with the input end of a third OR gate logic circuit, and the output end of the third OR gate logic circuit is connected with the input end of a first gate pole driving circuit;
the second temperature measuring circuit comprises a second temperature sensor, a second temperature comparison circuit and a fourth OR gate logic circuit; the output end of the second temperature sensor is connected with the input end of a second temperature comparison circuit, the output end of the second temperature comparison circuit is connected with the input end of a fourth OR gate logic circuit, and the output end of the fourth OR gate logic circuit is connected with the input end of a second gate electrode driving circuit.
Preferably, the first control circuit board further comprises a first dead zone circuit, a first optical fiber transceiver circuit, a third temperature measurement circuit and a third auxiliary power supply circuit; the first port of the first dead zone circuit, the first port of the first optical fiber transceiver circuit, the first port of the third temperature measurement circuit and the first port of the third auxiliary power supply circuit are connected with a first logic control circuit; the second port of the first dead zone circuit, the second port of the first optical fiber transceiver circuit, the second port of the third temperature measuring circuit and the second port of the third auxiliary power supply circuit are connected with the DSP module;
the second control circuit board further comprises a second dead zone circuit, a second optical fiber transceiving circuit, a fourth temperature measuring circuit and a fourth auxiliary power supply circuit; the first port of the second dead zone circuit, the first port of the second optical fiber transceiver circuit, the first port of the fourth temperature measurement circuit and the first port of the fourth auxiliary power supply circuit are connected with the second logic control circuit; and a second port of the second dead zone circuit, a second port of the second optical fiber transceiver circuit, a second port of the fourth temperature measurement circuit and a second port of the fourth auxiliary power supply circuit are connected with the DSP module.
Preferably, the first three-phase full-bridge circuit comprises a first driving power supply for supplying power to the gallium nitride high-voltage switch device, a first port of the first driving power supply is connected with the gallium nitride high-voltage switch device, and a second port of the first driving power supply is connected with a first port of the first logic control circuit through a signal stand column;
the second three-phase full-bridge circuit comprises a second driving power supply for supplying power to the gallium nitride low-voltage switch device, a first port of the second driving power supply is connected with the gallium nitride high-voltage switch device, and a second port of the second driving power supply is connected with a first port of the second logic control circuit through a signal stand column.
Preferably, the first driving power supply includes a first isolated power supply chip and a second isolated power supply chip connected in series, the first isolated power supply chip is configured to output a positive voltage of 5.5V, and the second isolated power supply chip is configured to output a negative voltage of 3.3V.
Preferably, the second driving power supply includes a third isolated power supply chip, a fourth isolated power supply chip and a low dropout linear stabilizer, which are connected in series, the third isolated power supply chip is used for outputting a positive voltage of 5.5V, the fourth isolated power supply chip is used for a negative voltage of 3.3V, and the low dropout linear stabilizer is used for adjusting the voltage output by the fourth isolated power supply chip and outputting a negative voltage of 1.5V.
According to the technical scheme, the embodiment of the invention has the following advantages:
the isolated high-frequency double-active-bridge converter provided by the embodiment of the invention has a symmetrical and simple structure, wherein the power electronic switch adopts a gallium nitride power device, so that the switching frequency of the double-active-bridge converter can be increased to the range of 100kHz-1MHz, and the three-phase high-frequency coaxial transformer adopts a coaxial structure, so that the volume and the weight of passive elements are reduced, the electromagnetic interference is reduced, the power density of the converter is improved, the electric energy can be transmitted in two directions, and the transmission direction can be switched rapidly. The embodiment of the invention can provide high-frequency switching frequency and high power density in the application occasion with strict limitation on volume and weight, and solves the technical problems of relatively low switching frequency and large volume and weight of the traditional double-active-bridge converter in the prior art.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without inventive exercise.
Fig. 1 is a block diagram of a topology structure of an isolated high-frequency dual-active-bridge converter based on a gallium nitride device according to an embodiment of the present invention.
Fig. 2 is a layout diagram of parallel devices in a high-voltage full-bridge power circuit board of an isolated high-frequency dual-active-bridge converter based on a gallium nitride device according to an embodiment of the present invention.
Fig. 3 is a layout diagram of parallel devices in a low-voltage full-bridge power circuit board of an isolated high-frequency dual-active-bridge converter based on a gallium nitride device according to an embodiment of the present invention.
Fig. 4 is a schematic diagram of a layout of a power circuit board and a driving circuit design of a bidirectional switch module of a control circuit board of an isolated high-frequency dual-active-bridge converter based on a gallium nitride device according to an embodiment of the present invention.
Fig. 5 is a schematic flow chart of a protection circuit of an isolated high-frequency dual-active-bridge converter based on a gallium nitride device according to an embodiment of the present invention.
Detailed Description
The embodiment of the invention provides an isolated high-frequency double-active-bridge converter based on a gallium nitride device, which is used for solving the technical problems of relatively low switching frequency and large volume and weight of the traditional double-active-bridge converter built by adopting a silicon device in the prior art.
In order to make the objects, features and advantages of the present invention more obvious and understandable, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the embodiments described below are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, fig. 1 is a block diagram of a topology structure of an isolated high-frequency dual-active-bridge converter based on a gallium nitride device according to an embodiment of the present invention.
The invention provides an isolated high-frequency double-active-bridge converter based on a gallium nitride device, which comprises: the high-voltage three-phase full-bridge circuit comprises a high-voltage three-phase full-bridge circuit module 1, a low-voltage three-phase full-bridge circuit module 2, a three-phase energy transfer inductor 3, a three-phase high-frequency coaxial transformer 4 and a DSP module 5; the high-voltage three-phase full-bridge circuit module 1 comprises a first three-phase full-bridge circuit formed by a gallium nitride high-voltage switch device GaN1, and the low-voltage three-phase full-bridge circuit module 2 comprises a second three-phase full-bridge circuit formed by a gallium nitride low-voltage switch device GaN 2;
the alternating current end of first three-phase full-bridge circuit with the three-phase passes can the inductance 3 first port be connected, the three-phase pass can the inductance 3 the second port with the primary winding of three-phase high frequency coaxial transformer 4 is connected, the secondary winding of three-phase high frequency coaxial transformer 4 with the alternating current end of second three-phase full-bridge circuit is connected, the second port of first three-phase full-bridge circuit and the second port of second three-phase full-bridge circuit all are connected with DSP module 5.
It should be further noted that the dc side of the first three-phase full-bridge circuit is connected to the 400V high-voltage bus, the dc side of the second three-phase full-bridge circuit is connected to the 48V low-voltage bus, and the ac sides of the two three-phase full-bridge circuits are connected together through the three-phase energy-transfer inductor 3 and the three-phase high-frequency coaxial transformer 4. The DSP module 5 executes protection logic and communicates with an upper computer or an adjacent device, and the DSP module 5 outputs a switch PWM signal to control the on and off of the gallium nitride high-voltage switch device GaN 1/the gallium nitride low-voltage switch device GaN2, so that the energy is controlled to be transmitted in two directions between the high-voltage and low-voltage electrical buses.
It should be further noted that the inductance value of the three-phase energy-transfer inductor 3 depends on the maximum inductance to be transmitted, and the leakage inductance of the three-phase high-frequency coaxial transformer 4 can also be directly utilized and ignored without installation; the three-phase high-frequency coaxial transformer 4 adopts a coaxial transformer structure and has the characteristics of small volume, light weight, good waterproof and temperature-resistant performances, extremely high coupling coefficient, extremely low loss and the like. Meanwhile, the winding of the coaxial transformer is positioned in the annular shell of the transformer, so that the coaxial transformer can play a role in shielding and almost has no electromagnetic interference to the outside. The DSP module 5 may use a sample measurement and control board that is adapted to the texas instruments DSP control card TMDSCNCD 28379D.
As a preferred embodiment, the high-voltage three-phase full-bridge circuit module 1 includes a first power circuit board and a first control circuit board connected through a signal pillar, the first power circuit board is provided with a first three-phase full-bridge circuit and a first gate driver circuit, and the first control circuit board is provided with a first logic control circuit and a first isolator;
the first port of the first gate drive circuit is connected with the first port of the first logic control circuit through the signal upright post and the first isolator, the second port of the first gate drive circuit is connected with the gate of a gallium nitride high-voltage switching device GaN1 in the first three-phase full-bridge circuit, and the second port of the first logic control circuit is connected with the DSP module 5;
the low-voltage three-phase full-bridge circuit module 2 comprises a second power circuit board and a second control circuit board which are connected through a signal stand column, wherein a second three-phase full-bridge circuit and a second gate drive circuit are arranged on the second power circuit board, and a second logic control circuit and a second isolator are arranged on the second control circuit board;
the first port of the second gate driving circuit is connected with the first port of the second logic control circuit through the signal upright post and the second isolator, the second port of the second gate driving circuit is connected with the gate pole of the gallium nitride low-voltage switching device GaN2 in the second three-phase full-bridge circuit, and the second port of the second logic control circuit is connected with the DSP module 5.
It should be further noted that the DSP module 5 outputs the switch PWM signal to the first/second logic control circuit, and the first/second logic control circuit controls the output gate driving signal of the first/second gate driving circuit to control the on/off of the GaN 1/GaN 2, thereby controlling the bidirectional transmission of energy between the high-voltage and low-voltage electrical buses.
The high-voltage three-phase full-bridge circuit module 1 and the low-voltage three-phase full-bridge circuit module 2 both adopt a structure that two circuit boards are stacked, and are respectively a power circuit board and a control circuit board. The power circuit board is provided with a gallium nitride switching device, a three-phase full-bridge circuit and a gate drive circuit; the logic circuit board is provided with a logic control circuit. As shown in figure 4, when the circuit board is wired and coated with copper, a floating ground is isolated on the control circuit board, the gate driving circuit on the power circuit board is connected with the control circuit board through a signal upright post (i.e. a plug and socket), other parts on the control circuit board are electrically isolated from the isolated floating ground through an isolated power supply chip and an isolator, a radiator is further arranged on the gallium nitride switch device for radiating heat, and an isolated power supply V is further arranged on the control circuit boardDDAnd an isolated power supply VEE。
It should be further noted that the gallium nitride high-voltage switching device GaN1 on the bridge arm of the first three-phase full-bridge circuit adopts a top-layer cooling type gallium nitride high-voltage switching device GaN1GS66508T, the gallium nitride low-voltage switching device GaN2 on the bridge arm of the second three-phase full-bridge circuit adopts a top-layer cooling type gallium nitride low-voltage switching device GaN2EPC2020, and the first gate driving circuit and the second gate driving circuit both adopt a driver UCC 27511.
Each switch of the top-layer cooling type gallium nitride high-voltage switching device GaN1GS66508T adopts two gallium nitride switching devices which work in parallel, and the two devices are arranged at an angle of 45 degrees, as shown in FIG. 2, the two devices are driven by a driver UCC27511 with large current and high slew rate, the gallium nitride high-voltage switching device GaN1 is placed at the top layer of a PCB circuit board, the driver UCC27511 is placed at the back corresponding to the adjacent gate attachments of the two gallium nitride high-voltage switching devices GaN1, the output of a P _ OUT pin of the high-voltage switching device GaN1 passes through a main on-resistance and then is connected to an N _ OUT pin, and simultaneously reaches the gate of the gallium nitride high-voltage switching device GaN1 through a distributed on-resistance, namely, the G2 pin of QA1_1 and the G1 pin of QA1_2 in FIG. 2 are respectively. In fig. 2, S is a source electrode of the GaN1 high-voltage switch device, D is a drain electrode of the GaN1 high-voltage switch device, and the two GaN1 high-voltage switch devices are placed at an angle of 45 degrees, so that the loop length and the loop difference between the two GaN1 high-voltage switch devices from the output end of the driver to the gate of the GaN1 high-voltage switch device and back to the driving ground level can be reduced as much as possible, the device spacing is enlarged to enhance the heat dissipation capability, and the heat distribution among three bridge arms is homogenized. Since this GaN high voltage switching device GaN1 has no Kelvin source, it is necessary to create one on the PCB and turn it on through another distribution to connect to the floating ground of the first logic control circuit. The main on-resistance and the distributed on-resistance are both 0.2W power resistances, and are packaged by a patch 0402 and arranged as close as possible to ensure that the distance from the output pin of the driver UCC27511 to the gate of the GaN1 high-voltage switch device is as short and equal as possible, and the distance from the source of the GaN1 to the floating ground is also equal and as short as possible.
The top-layer cooling type gallium nitride low-voltage switching devices GaN2EPC2020 adopt six gallium nitride switching devices to work in parallel, the six parallel devices are divided into two groups, every three devices are arranged at an angle of 90 degrees and are driven by a high-current high-slew-rate driver UCC27511, and as shown in FIG. 3, the gallium nitride low-voltage switching devices GaN2Q1_1, Q1_2, Q1_3 and the driver UCC27511 are adopted. The GaN low-voltage switch device GaN2EPC2020 is placed at the top layer of the PCB, the driver UCC27511 is placed at the back corresponding to the adjacent gate attachments of the three GaN low-voltage switch devices GaN2, the output of the P _ OUT pin passes through an on-resistance, then is connected to the N _ OUT pin and respectively passes through a distributed resistance to reach the gate of the GaN low-voltage switch device GaN2, namely, the pad pins (r) corresponding to Q1_1, Q1_2 and Q1_3 in FIG. 3. The main on-resistance and the distributed on-resistance are both 0.2W power resistances, packaged with a patch 0402, and arranged as close as possible to ensure that the distance from the driver UCC27511 output pin to the GaN2 gate of the low voltage GaN switching device is as short and as long as possible. The pad pin SS of the GaN low-voltage switch device GaN2EPC2020 is used as a Kelvin source, and is separated from other source pins on the wiring, and is conductively connected to the floating ground of the driving circuit through another distribution. The distance from the source of GaN2 to the floating ground should also be of equal length and as short as possible. The three gallium nitride low-voltage switch devices GaN2 are placed at an angle of 90 degrees, so that the loop length and the loop difference of the three devices from the output end of the driver to the gate pole of the gallium nitride low-voltage switch device GaN2 and back to the driving ground level can be reduced as much as possible, the device spacing is enlarged to enhance the heat dissipation capacity, and the heat distribution among three bridge arms is homogenized.
As a preferred embodiment, the first power circuit board further comprises a first overcurrent voltage measuring circuit, a first temperature measuring circuit and a first emergency protection circuit; the first port of the first overcurrent voltage measuring circuit, the first port of the first temperature measuring circuit and the first port of the first emergency protection circuit are connected with the alternating current port and the direct current port of the bridge arm of the first three-phase full-bridge circuit; the second port of the first overcurrent voltage measuring circuit and the second port of the first temperature measuring circuit are both connected with the DSP module 5, and the second port of the first emergency protection circuit is connected with the first gate drive circuit;
the second power circuit board further comprises a second overcurrent and voltage measuring circuit, a second temperature measuring circuit and a second emergency protection circuit; the first port of the second overcurrent voltage measuring circuit, the first port of the second temperature measuring circuit and the first port of the second emergency protection circuit are connected with the alternating current port and the direct current port of the bridge arm of the second three-phase full-bridge circuit; a second port of the second overcurrent voltage measuring circuit and a second port of the second temperature measuring circuit are both connected with the DSP module 5; the second port of the second emergency protection circuit is connected with the second gate drive circuit.
It should be further noted that the DSP module 5 receives the voltage and current information and the hardware temperature information of the three-phase full-bridge circuit transmitted by the current and voltage measuring circuit and the temperature measuring circuit, and determines whether to issue the switching PWM signal to control the gallium nitride switching device to be turned off according to the voltage and current information and the hardware temperature information of the three-phase full-bridge circuit.
As a preferred embodiment, the first overcurrent-voltage measuring circuit includes a first bridge arm current sensor, a first comparison circuit, and a first or gate logic circuit; the output end of the first bridge arm current sensor is connected with the input end of a first comparison circuit, the output end of the first comparison circuit is connected with the input end of a first OR gate logic circuit, and the output end of the first OR gate logic circuit is connected with the input end of a first gate drive circuit;
the second overcurrent voltage and current measuring circuit comprises a second bridge arm current sensor, a second comparison circuit and a second OR gate logic circuit; the output end of the second bridge arm current sensor is connected with the input end of a second comparison circuit, the output end of the second comparison circuit is connected with the input end of a second OR gate logic circuit, and the output end of the second OR gate logic circuit is connected with the input end of a second gate driving circuit.
It is further explained that the first bridge arm current sensor adopts a 1.5MHz high bandwidth on-board current sensor MCA1101-50-3, and a current input and output terminal of the sensor is connected in parallel with a 0.1 milliohm shunt resistor WSLP5931L1000 FEA; the second bridge arm current sensor adopts a 1.5MHz high bandwidth onboard current sensor MCA1101-50-3, the current sensor MCA1101-50 detects bridge arm alternating current of a second three-phase full bridge circuit at high frequency, the bridge arm alternating current is compared with a current amplitude limiting value in a second comparison circuit, and a protection signal is generated after passing through an OR (second OR) logic circuit and is output to an enable input pin at the primary side of the isolator to rapidly turn off a gate level driving signal of a second gate level driving circuit when overcurrent, and the protection signal is simultaneously fed back to the DSP module 5 to execute further protection action, as shown in FIG. 5.
As a preferred embodiment, the first overcurrent voltage measurement circuit further includes a first dc voltage sensor, a first voltage precision operational amplifier circuit, and a first dc sensor, an output end of the first dc voltage sensor is connected to an input end of the first voltage precision operational amplifier circuit, and an output end of the first voltage precision operational amplifier circuit and an output end of the first dc sensor are both connected to the DSP module 5;
the second overcurrent and voltage measuring circuit further comprises a second direct-current voltage sensor, a second voltage precise operational amplifier circuit and a second direct-current sensor, wherein the output end of the second direct-current voltage sensor is connected with the input end of the second voltage precise operational amplifier circuit, and the output end of the second voltage precise operational amplifier circuit and the output end of the second direct-current sensor are both connected with the DSP module 5.
It should be further explained that the direct current voltage sensor adopts an ACPL-C79B chip of BROADCOM company, the bandwidth is as high as 200kHz, the output of the direct current voltage sensor is a differential signal, and a measurement voltage result can be obtained through a high-slew-rate accurate operational amplifier circuit TSB7191AILT of STMicroelectronics company; the second direct current sensor adopts an ACS773KCB-150B-PFF-T chip of Allegro MicroSystems LLC company, and the first direct current sensor adopts an ACS725KMATR-20AB-T chip of Allegro MicroSystems LLC company. The ACS773KCB-150B-PFF-T, ACS725KMATR-20AB-T, ACPL-C79B and the precise operational amplifier circuit TSB7191AILT are both powered by 3.3V voltage, and the output result can be directly connected into the DSP module 5 without a voltage-current mirror conversion circuit.
As a preferred embodiment, the first temperature measuring circuit includes a first temperature sensor, a first temperature comparing circuit, and a third or gate logic circuit; the output end of the first temperature sensor is connected with the input end of a first temperature comparison circuit, the output end of the first temperature comparison circuit is connected with the input end of a third OR gate logic circuit, and the output end of the third OR gate logic circuit is connected with the input end of a first gate pole driving circuit;
the second temperature measuring circuit comprises a second temperature sensor, a second temperature comparison circuit and a fourth OR gate logic circuit; the output end of the second temperature sensor is connected with the input end of a second temperature comparison circuit, the output end of the second temperature comparison circuit is connected with the input end of a fourth OR gate logic circuit, and the output end of the fourth OR gate logic circuit is connected with the input end of a second gate electrode driving circuit.
It should be further noted that the temperature sensor adopts 0805 resistance type packaged Pt1000 SMD 0805 FD, wherein the height of the thermistor Pt1000 SMD 0805 FD is not more than 0.55mm and is lower than the selected gallium nitride switch device, so that the thermistor is placed on the surface layer of the PCB circuit board close to the gallium nitride switch device. The temperature sensor adopts a bridge circuit containing a thermistor, the temperature comparison circuit comprises a comparator and a voltage-current mirror image conversion circuit, the output of the bridge circuit and a preset temperature amplitude limit value generate a protection signal after passing through the comparator and the voltage-current mirror image conversion circuit, the protection signal is output to the inverting input end of the driver UCC27511 so as to rapidly turn off a gate-level driving signal when the temperature is too high and the current is over-current, and meanwhile, the temperature measurement output is output to the DSP module 55 after passing through the voltage-current mirror image conversion circuit so as to execute further protection action.
As a preferred embodiment, the first control circuit board further comprises a first dead zone circuit, a first optical fiber transceiver circuit, a third temperature measurement circuit and a third auxiliary power supply circuit; the first port of the first dead zone circuit, the first port of the first optical fiber transceiver circuit, the first port of the third temperature measurement circuit and the first port of the third auxiliary power supply circuit are connected with a first logic control circuit; the second port of the first dead zone circuit, the second port of the first optical fiber transceiver circuit, the second port of the third temperature measurement circuit and the second port of the third auxiliary power supply circuit are connected with the DSP module 5;
the second control circuit board further comprises a second dead zone circuit, a second optical fiber transceiver circuit, a fourth temperature measuring circuit and a fourth auxiliary power supply circuit; the first port of the second dead zone circuit, the first port of the second optical fiber transceiver circuit, the first port of the fourth temperature measurement circuit and the first port of the fourth auxiliary power supply circuit are connected with the second logic control circuit; and a second port of the second dead zone circuit, a second port of the second optical fiber transceiver circuit, a second port of the fourth temperature measurement circuit and a second port of the fourth auxiliary power supply circuit are connected with the DSP module 5.
It should be further noted that the outputs of the bridge arm current sensors MCA1101-50 are compared in the comparison circuit, and then generate a protection signal after passing through the or gate logic circuit, and the protection signal is or-operated with the output of the dead zone protection circuit, so as to determine whether to enable the PWM switching signal, as shown in fig. 5.
As a preferred embodiment, the first three-phase full-bridge circuit comprises a first driving power supply for supplying power to the gallium nitride high-voltage switching device GaN1, a first port of the first driving power supply is connected with the gallium nitride high-voltage switching device GaN1, and a second port of the first driving power supply is connected with a first port of the first logic control circuit through a signal post;
the second three-phase full-bridge circuit comprises a second driving power supply for supplying power to a gallium nitride low-voltage switch device GaN2, a first port of the second driving power supply is connected with a gallium nitride high-voltage switch device GaN1, and a second port of the second driving power supply is connected with a first port of a second logic control circuit through a signal stand column.
As a preferred embodiment, the first driving power supply includes a first isolated power supply chip and a second isolated power supply chip connected in series, the first isolated power supply chip is configured to output a positive voltage of 5.5V, and the second isolated power supply chip is configured to output a negative voltage of 3.3V. It should be further noted that the first isolated power chip employs a DC/DC module power F0505XT-2WR2, the second isolated power chip employs a DC/DC module power F0503XT-2WR2, and the two power supplies are connected in series to generate a supply voltage of a 5V positive voltage VDD and a-3.3V negative voltage VEE.
As a preferred embodiment, the second driving power supply includes a third isolated power supply chip, a fourth isolated power supply chip and a low dropout linear stabilizer, which are connected in series, where the third isolated power supply chip is configured to output a positive voltage of 5.5V, the fourth isolated power supply chip is configured to output a negative voltage of 3.3V, and the low dropout linear stabilizer is configured to adjust a voltage output by the fourth isolated power supply chip and output a negative voltage of 1.5V. Furthermore, the output of the fourth isolation type power supply chip is connected with a low dropout regulator (LDO) chip for regulating and generating a voltage of 1.5V, the ground of the third isolation type power supply chip is connected with the positive output of the LDO with a 1.5V output, and the third isolation type power supply chip and the ground are connected in series to form a power supply with a 5V positive voltage VDD and a-1.5V negative voltage VEE.
It is clear to those skilled in the art that, for convenience and brevity of description, the specific working processes of the above-described systems, apparatuses and units may refer to the corresponding processes in the foregoing method embodiments, and are not described herein again.
In the several embodiments provided in the present application, it should be understood that the disclosed system, apparatus and method may be implemented in other manners. For example, the above-described apparatus embodiments are merely illustrative, and for example, the division of the units is only one logical division, and other divisions may be realized in practice, for example, a plurality of units or components may be combined or integrated into another system, or some features may be omitted, or not executed. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be an indirect coupling or communication connection through some interfaces, devices or units, and may be in an electrical, mechanical or other form.
The units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of the embodiment.
The above-mentioned embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the same; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.

Claims (10)

1. An isolated high-frequency dual-active-bridge converter based on a gallium nitride device is characterized by comprising: the high-voltage three-phase full-bridge circuit module, the low-voltage three-phase full-bridge circuit module, the three-phase energy transfer inductor, the three-phase high-frequency coaxial transformer and the DSP module; the high-voltage three-phase full-bridge circuit module comprises a first three-phase full-bridge circuit formed by gallium nitride high-voltage switching devices, and the low-voltage three-phase full-bridge circuit module comprises a second three-phase full-bridge circuit formed by gallium nitride low-voltage switching devices;
the alternating current end of first three-phase full-bridge circuit with the first port of three-phase biography ability inductance is connected, the second port of three-phase biography ability inductance with the primary winding of three-phase high frequency coaxial transformer is connected, the secondary winding of three-phase high frequency coaxial transformer with the alternating current end of second three-phase full-bridge circuit is connected, the second port of first three-phase full-bridge circuit and the second port of second three-phase full-bridge circuit all are connected with the DSP module.
2. The isolated high-frequency dual-active-bridge converter based on the gallium nitride device according to claim 1, wherein the high-voltage three-phase full-bridge circuit module comprises a first power circuit board and a first control circuit board which are connected through a signal column, the first power circuit board is provided with a first three-phase full-bridge circuit and a first gate drive circuit, and the first control circuit board is provided with a first logic control circuit and a first isolator;
the first port of the first gate drive circuit is connected with the first port of the first logic control circuit through the signal upright post and the first isolator, the second port of the first gate drive circuit is connected with the gate of the gallium nitride high-voltage switch device in the first three-phase full-bridge circuit, and the second port of the first logic control circuit is connected with the DSP module;
the low-voltage three-phase full-bridge circuit module comprises a second power circuit board and a second control circuit board which are connected through a signal stand column, wherein a second three-phase full-bridge circuit and a second gate drive circuit are arranged on the second power circuit board, and a second logic control circuit and a second isolator are arranged on the second control circuit board;
and a first port of the second gate driving circuit is connected with a first port of a second logic control circuit through a signal upright post and a second isolator, a second port of the second gate driving circuit is connected with a gate pole of a gallium nitride low-voltage switch device in a second three-phase full-bridge circuit, and a second port of the second logic control circuit is connected with the DSP module.
3. The isolated high-frequency dual-active-bridge converter based on the gallium nitride device according to claim 2, wherein the first power circuit board further comprises a first overcurrent voltage measuring circuit, a first temperature measuring circuit and a first emergency protection circuit; the first port of the first overcurrent voltage measuring circuit, the first port of the first temperature measuring circuit and the first port of the first emergency protection circuit are connected with the alternating current port and the direct current port of the bridge arm of the first three-phase full-bridge circuit; the second port of the first overcurrent voltage measuring circuit and the second port of the first temperature measuring circuit are both connected with the DSP module, and the second port of the first emergency protection circuit is connected with the first gate drive circuit;
the second power circuit board further comprises a second overcurrent voltage measuring circuit, a second temperature measuring circuit and a second emergency protection circuit; the first port of the second overcurrent voltage measuring circuit, the first port of the second temperature measuring circuit and the first port of the second emergency protection circuit are connected with the alternating current port and the direct current port of the bridge arm of the second three-phase full-bridge circuit; a second port of the second overcurrent voltage measuring circuit and a second port of the second temperature measuring circuit are connected with the DSP module; the second port of the second emergency protection circuit is connected with the second gate drive circuit.
4. The isolated high-frequency dual-active-bridge converter based on the gallium nitride device of claim 3, wherein the first overcurrent voltage measurement circuit comprises a first bridge arm current sensor, a first comparison circuit and a first OR gate logic circuit; the output end of the first bridge arm current sensor is connected with the input end of a first comparison circuit, the output end of the first comparison circuit is connected with the input end of a first OR gate logic circuit, and the output end of the first OR gate logic circuit is connected with the input end of a first gate drive circuit;
the second overcurrent voltage and current measuring circuit comprises a second bridge arm current sensor, a second comparison circuit and a second OR gate logic circuit; the output end of the second bridge arm current sensor is connected with the input end of a second comparison circuit, the output end of the second comparison circuit is connected with the input end of a second OR gate logic circuit, and the output end of the second OR gate logic circuit is connected with the input end of a second gate driving circuit.
5. The isolated high-frequency dual-active-bridge converter based on the gallium nitride device according to claim 4, wherein the first overcurrent voltage measuring circuit further comprises a first direct-current voltage sensor, a first voltage precision operational amplifier circuit and a first direct-current sensor, an output end of the first direct-current voltage sensor is connected to an input end of the first voltage precision operational amplifier circuit, and an output end of the first voltage precision operational amplifier circuit and an output end of the first direct-current sensor are connected to the DSP module;
the second overcurrent and voltage measuring circuit further comprises a second direct-current voltage sensor, a second voltage precise operational amplifier circuit and a second direct-current sensor, wherein the output end of the second direct-current voltage sensor is connected with the input end of the second voltage precise operational amplifier circuit, and the output end of the second voltage precise operational amplifier circuit and the output end of the second direct-current sensor are both connected with the DSP module.
6. The isolated high-frequency dual-active-bridge converter based on the gallium nitride device according to claim 3, wherein the first temperature measurement circuit comprises a first temperature sensor, a first temperature comparison circuit and a third OR gate logic circuit; the output end of the first temperature sensor is connected with the input end of a first temperature comparison circuit, the output end of the first temperature comparison circuit is connected with the input end of a third OR gate logic circuit, and the output end of the third OR gate logic circuit is connected with the input end of a first gate pole driving circuit;
the second temperature measuring circuit comprises a second temperature sensor, a second temperature comparison circuit and a fourth OR gate logic circuit; the output end of the second temperature sensor is connected with the input end of a second temperature comparison circuit, the output end of the second temperature comparison circuit is connected with the input end of a fourth OR gate logic circuit, and the output end of the fourth OR gate logic circuit is connected with the input end of a second gate electrode driving circuit.
7. The isolated high-frequency dual-active-bridge converter based on the gallium nitride device according to claim 2, wherein the first control circuit board further comprises a first dead-zone circuit, a first optical fiber transceiver circuit, a third temperature measurement circuit and a third auxiliary power supply circuit; the first port of the first dead zone circuit, the first port of the first optical fiber transceiver circuit, the first port of the third temperature measurement circuit and the first port of the third auxiliary power supply circuit are connected with a first logic control circuit; the second port of the first dead zone circuit, the second port of the first optical fiber transceiver circuit, the second port of the third temperature measuring circuit and the second port of the third auxiliary power supply circuit are connected with the DSP module;
the second control circuit board further comprises a second dead zone circuit, a second optical fiber transceiving circuit, a fourth temperature measuring circuit and a fourth auxiliary power supply circuit; the first port of the second dead zone circuit, the first port of the second optical fiber transceiver circuit, the first port of the fourth temperature measurement circuit and the first port of the fourth auxiliary power supply circuit are connected with the second logic control circuit; and a second port of the second dead zone circuit, a second port of the second optical fiber transceiver circuit, a second port of the fourth temperature measurement circuit and a second port of the fourth auxiliary power supply circuit are connected with the DSP module.
8. The isolated high-frequency dual-active-bridge converter based on the gallium nitride device according to claim 2, wherein the first three-phase full-bridge circuit comprises a first driving power supply for supplying power to the gallium nitride high-voltage switching device, a first port of the first driving power supply is connected with the gallium nitride high-voltage switching device, and a second port of the first driving power supply is connected with a first port of the first logic control circuit through a signal pillar;
the second three-phase full-bridge circuit comprises a second driving power supply for supplying power to the gallium nitride low-voltage switch device, a first port of the second driving power supply is connected with the gallium nitride high-voltage switch device, and a second port of the second driving power supply is connected with a first port of the second logic control circuit through a signal stand column.
9. The isolated high-frequency dual-active-bridge converter based on the gallium nitride device of claim 8, wherein the first driving power supply comprises a first isolated power supply chip and a second isolated power supply chip which are connected in series, the first isolated power supply chip is used for outputting a positive voltage of 5.5V, and the second isolated power supply chip is used for outputting a negative voltage of 3.3V.
10. The isolated high-frequency dual-active-bridge converter based on the gallium nitride device of claim 8, wherein the second driving power supply comprises a third isolated power supply chip, a fourth isolated power supply chip and a low-dropout linear stabilizer, which are connected in series, the third isolated power supply chip is used for outputting a positive voltage of 5.5V, the fourth isolated power supply chip is used for outputting a negative voltage of 3.3V, and the low-dropout linear stabilizer is used for adjusting the voltage output by the fourth isolated power supply chip and outputting a negative voltage of 1.5V.
CN202010630899.0A 2020-07-03 2020-07-03 Isolated high-frequency double-active-bridge converter based on gallium nitride device Pending CN113346752A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115603587A (en) * 2022-10-27 2023-01-13 北京智芯微电子科技有限公司（Cn） Low EMI converter circuit, electronic device, chip and power transmission system

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115603587A (en) * 2022-10-27 2023-01-13 北京智芯微电子科技有限公司（Cn） Low EMI converter circuit, electronic device, chip and power transmission system
CN115603587B (en) * 2022-10-27 2023-07-18 北京智芯微电子科技有限公司 Low EMI converter circuit, electronic device, chip, and power transmission system

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