CN113345617B - Ion trap system - Google Patents

Ion trap system Download PDF

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Publication number
CN113345617B
CN113345617B CN202110524291.4A CN202110524291A CN113345617B CN 113345617 B CN113345617 B CN 113345617B CN 202110524291 A CN202110524291 A CN 202110524291A CN 113345617 B CN113345617 B CN 113345617B
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ion trap
optical window
optical
ion
center
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CN113345617A (en
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段路明
周子超
何丽
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Tsinghua University
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Tsinghua University
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    • GPHYSICS
    • G21NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21KTECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/003Manipulation of charged particles by using radiation pressure, e.g. optical levitation

Abstract

Disclosed herein is an ion trap system comprising: the ion trap and the vacuum cavity provided with the first optical window; the vacuum cavity is also provided with second optical windows which are symmetrically distributed, and the center of the second optical window and the center of the first optical window are positioned on the same plane; wherein the first optical window provides an optical pathway for performing the first operation; the second optical window providing an optical pathway for performing a second operation; the second optical window is larger than the first optical window. According to the embodiment of the application, the pair of second optical windows used for executing the second operation are distributed in a symmetrical mode in the plane where the first optical windows are arranged, so that an optical path is provided for executing the second operation, and the feasibility of executing the second operation is improved.

Description

Ion trap system
Technical Field
This document relates to, but is not limited to, quantum computer technology, and in particular to an ion trap system.
Background
The quantum computer mainly refers to general equipment for realizing general quantum computation and quantum simulation through quantum logic gate operation, and is in the research and development testing stage of a prototype at present. At present, the main physical experimental platforms for physically realizing the quantum computer are as follows: the basic logic unit of the ion trap, the superconduction and the diamond color center is composed of quantum bits which follow the quantum mechanics principle, and a large number of quantum bits which can be controlled coherently can physically realize a quantum computer. Compared with the traditional computer, the quantum computer has the advantages that the operation time can be greatly reduced when the quantum computer solves some specific problems, and the quantum computer formed by small-scale quantum bits can already complete some calculation tasks which cannot be realized by the traditional computer; therefore, the quantum computer has wide application prospect in the aspects of future basic scientific research, artificial intelligence, material simulation, information safety, financial market optimization, climate change prediction and the like; how to realize quantum computers is one of the research hotspots in the crossing fields of the current physics and computer information science. The ion array trapped in the ion trap is used as a quantum bit array, and can realize the quantum logic gate operation with high fidelity under the existing experimental conditions. The ion quantum bit has excellent performance in the aspects of interaction control, long coherence time, high-fidelity quantum logic gate operation, quantum error correction and other key indexes for measuring quantum computing performance, and is one of the most likely platforms for realizing quantum computers.
Ion type amountThe quantum bit basic logic gate operation on the sub-computer is realized mainly by laser or microwave. The ion qubits are generally bound in a vacuum environment by the potential field of the ion trap, so that the influence of background gas collision on the whole ion lattice stability is reduced. In a single ion trap, the trapped ion lattice is impacted by residual gas in vacuum background gas, so that the stability of the ion lattice is affected, and the number of the trapped ion qubits in the single ion trap is limited. The vacuum degree of the ion trap vacuum system is approximately 10 ≡ -11 On the order of Torr, the main component of the background gas at this vacuum level is hydrogen; background gas collides with ions mainly by elastic collision and inelastic collision, hydrogen molecules transfer own kinetic energy to ion qubits in the collision process, and ion lattices are heated to cause instability. On the one hand, the stability of the ion lattice is improved, on the other hand, the residual gas in the vacuum cavity of the ion trap can be reduced, and the gas outlet rate of the vacuum cavity can be reduced by the treatments of high-temperature dehydrogenation process, vacuum element material selection, long-time vacuum baking and the like; on the other hand, the kinetic energy of the background gas can be reduced by reducing the background ambient temperature of the ion trap. Based on the improvement of the two aspects, the collision probability of the background gas and the ion lattice and the movement speed of the background gas in the collision process can be reduced, and the energy exchange of the ion lattice and the background gas in the collision process is ensured to be insufficient to cause the ion lattice to be heated and dissolved, so that the stability of the whole ion lattice is improved.
The vacuum degree of the low-temperature ion trap can reach 10 percent by integrating a low-temperature constant-temperature technology -12 Torr to 10 -13 Torr, the background ambient temperature is around 4 Kelvin (k). The number of the ion qubits which can be trapped in a single ion trap can be more than 100 through an integrated low-temperature constant-temperature technology. In the future quantum computing field, trapping more ion qubits to increase the size of the ion qubits in the low-temperature ion trap is a core problem for realizing ion quantum computing.
Disclosure of Invention
The following is a summary of the subject matter described in detail herein. This summary is not intended to limit the scope of the claims.
The embodiment of the application provides an ion trap system, which can improve the feasibility of performing operations such as fluorescence collection, coherent control, independent site selection and the like.
An embodiment of the present application provides an ion trap system including: the ion trap and the vacuum cavity provided with the first optical window; the vacuum cavity is also provided with second optical windows which are symmetrically distributed, and the center of the second optical window and the center of the first optical window are positioned on the same plane; the vacuum cavity further comprises: the flange port of the wedge is used for connecting low temperature Leng Beng;
wherein the first optical window provides an optical pathway for performing a first operation; the second optical window providing an optical pathway for performing a second operation; the second optical window is larger than the first optical window; the first operation includes operations of one or any combination of the following: ion laser cooling, initial state preparation, raman control and fluorescence detection; the second operation includes operations of one or any combination of the following: fluorescence collection, coherent manipulation and independent addressing.
In one illustrative example, the numerical aperture of the second optical window for the vacuum cavity center is greater than a first preset threshold;
wherein the first preset threshold is determined according to the second operation.
In an illustrative example, a third optical window is further arranged on the vacuum cavity along the direction perpendicular to the plane, and is used for entering pulse laser for executing a third operation;
wherein the third operation comprises laser ablation.
In an exemplary embodiment, the numerical aperture of the third optical window with respect to the center of the vacuum chamber is a preset value;
wherein the preset value is determined according to the third operation.
In one illustrative example, the principal axis of vibration mode of the trapping potential generated by the ion trap has a non-zero component in the plane.
In one illustrative example, the center of the ion trap coincides with the center of the vacuum chamber.
In one illustrative example, the ion trap includes any one of the following:
discrete blade traps, monolithic integrated ion traps, and three-dimensional multi-layer ion traps.
The ion trap system of the present application comprises: the ion trap and the vacuum cavity provided with the first optical window; the vacuum cavity is also provided with second optical windows which are symmetrically distributed, and the center of the second optical window and the center of the first optical window are positioned on the same plane; wherein the first optical window provides an optical pathway for performing the first operation; the second optical window providing an optical pathway for performing a second operation; the second optical window is larger than the first optical window. According to the embodiment of the application, the pair of second optical windows used for executing the second operation are distributed in a symmetrical mode in the plane where the first optical windows are arranged, so that an optical path is provided for executing the second operation, and the feasibility of executing the second operation is improved.
Additional features and advantages of the application will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the application. The objectives and other advantages of the application will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
The accompanying drawings are included to provide a further understanding of the application and are incorporated in and constitute a part of this specification, illustrate and do not limit the application.
Fig. 1 is a perspective view of an ion trap system according to an embodiment of the present application;
fig. 2 is a cross-sectional view of an ion trap system according to an embodiment of the present application;
fig. 3 is a top view of an ion trap system according to an embodiment of the present application;
FIG. 4 is a schematic diagram of ion trap distribution locations according to an embodiment of the present application;
fig. 5 is a schematic diagram of ion trap distribution locations according to another embodiment of the present application.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the present application more apparent, embodiments of the present application will be described in detail hereinafter with reference to the accompanying drawings. It should be noted that, without conflict, the embodiments of the present application and features of the embodiments may be arbitrarily combined with each other.
The steps illustrated in the flowchart of the figures may be performed in a computer system, such as a set of computer-executable instructions. Also, while a logical order is depicted in the flowchart, in some cases, the steps depicted or described may be performed in a different order than presented herein.
The inventor of the present application has found through analysis that, in the related art, the low-temperature ion trap system has only one high numerical aperture optical window for fluorescence collection, coherent manipulation and independent address selection, and the optical path obtained by the arrangement is not convenient for fluorescence collection, coherent manipulation and independent address selection operation, and the design of the ion trap system which can be suitable for fluorescence collection, coherent manipulation and independent address selection operation becomes a problem for carrying out ion trap related experiments and applications.
Fig. 1 is a perspective view of an ion trap system according to an embodiment of the present application, fig. 2 is a cross-sectional view of the ion trap system according to an embodiment of the present application, and fig. 3 is a plan view of the ion trap system according to an embodiment of the present application, referring to fig. 1 to 3, the ion trap system according to an embodiment of the present application includes: an ion trap 1, a vacuum cavity 2 provided with a first optical window 2-1; the vacuum cavity 2 is also provided with second optical windows 2-2 which are symmetrically distributed, and the centers of the second optical windows and the first optical windows are positioned on the same plane;
wherein the first optical window provides an optical pathway for performing the first operation; the second optical window providing an optical pathway for performing a second operation; the second optical window is larger than the first optical window.
An ion trap system according to an embodiment of the present application includes: the ion trap and the vacuum cavity provided with the first optical window; the vacuum cavity is also provided with second optical windows which are symmetrically distributed, and the center of the second optical window and the center of the first optical window are positioned on the same plane; wherein the first optical window provides an optical pathway for performing the first operation; the second optical window providing an optical pathway for performing a second operation; the second optical window is larger than the first optical window. According to the embodiment of the application, the pair of second optical windows used for executing the second operation are distributed in a symmetrical mode in the plane where the first optical windows are arranged, so that an optical path is provided for executing the second operation, and the feasibility of executing the second operation is improved.
In an illustrative example, the vacuum chamber 2 in the embodiment of the present application may employ a structure similar to an octagonal chamber. The dimensions of the vacuum chamber 2 and the first optical window 2-1, the second optical window 2-2, etc. can be determined with reference to the application of the ion trap system in the related art.
In an illustrative example, the second operation in an embodiment of the present application includes operations of one or any combination of the following: fluorescence collection, coherent manipulation and independent site selection; in one illustrative example, the second operation may include other kinds of operations, which may be added or deleted by a technician as required for the optical window by the operation.
In an illustrative example, the numerical aperture of the second optical window 2-2 for the center of the vacuum chamber 2 in the embodiment of the present application is larger than the first preset threshold; wherein the first preset threshold is determined according to the second operation.
In an exemplary embodiment, the embodiment of the present application may determine the magnitude of the first preset threshold according to the specific content of the first operation used for implementation of the ion trap system; for example, where the first operation includes fluorescence collection, coherent manipulation, and independent addressing, the first preset threshold may be set to a value greater than 0.6 or 0.7.
In an illustrative example, the first operation in an embodiment of the present application includes operations of one or any combination of the following: ion laser cooling, initial state preparation, raman control and fluorescence detection. In one illustrative example, the first operation may include other kinds of operations, which may be added or deleted by a technician as required for the optical window by the operation.
In an exemplary embodiment, the number, distribution, and numerical aperture of the first optical windows of the embodiments of the present application may be set by those skilled in the art with reference to the design of the ion trap system existing in the related art; for example, six first optical windows are provided, the numerical aperture is about 0.1, and the six first optical windows are uniformly distributed at positions on the same plane as the pair of second optical windows except for the positions where the second optical windows are provided; for example, 3 pairs of first optical windows are respectively disposed at 60 degrees, 90 degrees and 120 degrees with respect to the main axis direction of the second optical window.
In an illustrative example, a third optical window 2-3 is further provided on the vacuum chamber 2 along a direction perpendicular to the above-mentioned plane (the plane where the first optical window 2-1 is provided) for incidence of the pulsed laser light for performing the third operation;
wherein the third operation comprises laser ablation.
In one illustrative example, the first operation may include other kinds of operations, which may be added or deleted by a technician as required for the optical window by the operation.
In one illustrative example, the direction perpendicular to the plane is: the center of the plane is taken as a point where a straight line perpendicular to the plane passes, and the straight line intersects with the vacuum chamber 2.
In an exemplary embodiment, the numerical aperture of the third optical window 2-3 with respect to the center of the vacuum chamber 2 in the embodiment of the present application is a preset value. In an exemplary embodiment, the preset value may be about 0.1, and may be set by those skilled in the art based on the use of the third optical window.
In one illustrative example, the ion trap system of the present application further comprises, in addition to the above-described composition, a vacuum chamber 2: and the wedge is used for connecting the flange port 2-4 of the cryogenic pump 3.
In an illustrative example, the low temperature Leng Beng 3 of the present application comprises a two-layer constant temperature shield that is coupled into the vacuum chamber 2 via flange ports 2-4.
In an illustrative example, the two-layer constant temperature shielding cover of the embodiment of the application comprises an inner-layer constant temperature shielding cover 3-1 and an outer-layer constant temperature shielding cover 3-2, wherein the two-layer constant temperature shielding covers are respectively used for maintaining a certain low-temperature environment; assuming that the background ambient temperature of the ion trap producing the ion qubit array is around 4K (kelvin), the outer layer constant temperature shield of the embodiment of the application is used to maintain the ambient temperature at 40K, and the inner layer constant temperature shield is used to maintain the ambient temperature at 4K, thereby ensuring that the background ambient temperature of the ion qubit is around 4K.
It should be noted that, referring to the related design, the vacuum cavity is provided with the first optical window, the second optical window and the third optical window, and corresponding positions of the constant temperature shielding cover are respectively provided with corresponding through holes and window sheets.
According to the embodiment of the application, the first optical window, the second optical window and the third optical window are arranged in the vacuum cavity, and the corresponding through holes and the window sheets are respectively arranged, so that the laser incident into the vacuum cavity can be smoothly irradiated to the center of the ion trap. The low-temperature environment is maintained in the low-temperature heat shield, and the two layers of shield have adsorption effect on background gas molecules at low temperature, so that the low-temperature heat shield can be regarded as a low-temperature pump with high pumping speed, and the vacuum degree of a low-temperature area is one to two orders of magnitude lower than that of a normal-temperature area; taking the example of background gas molecules in a low temperature environment around 4K, the kinetic energy of the background gas molecules is two orders of magnitude lower than that in a normal temperature environment.
In one illustrative example, the ion trap 1 of the present embodiment includes any one of the following:
discrete blade traps, monolithic integrated ion traps, and three-dimensional multi-layer ion traps.
It should be noted that, the ion trap according to the embodiment of the present application may further include other types of ion traps, for example, quadrupole ion traps; so long as the ion trap system of the embodiments of the present application is applicable.
In one illustrative example, the center of the ion trap of embodiments of the present application coincides with the center of the vacuum chamber.
In one illustrative example, the principal axes of the modes of vibration of the trapping potential generated by an ion trap of an embodiment of the present application have a non-zero component in the plane.
It should be noted that, based on the requirement that the vibration mode principal axis of the trapping potential generated by the ion trap has a non-zero component on a plane, the embodiment of the present application can set the ion trap with reference to the related principle. Here, the presence of a non-zero component means that the projection of the principal axis of the vibration mode onto the plane is a line segment, i.e. the projection is not a point (the projection is a point when the principal axis of the vibration mode is perpendicular to the plane).
The ion trap setup of the embodiment of the present application is briefly described below with the center of the vacuum chamber as the origin of the three-dimensional coordinate system, the plane of the first optical window as the XZ plane, the center connecting line of the two second optical windows being located on the X axis, and the connecting line direction between the origin and the center of the third optical window being the Y axis direction:
fig. 4 is a schematic diagram of distribution positions of an ion trap according to an embodiment of the present application, as shown in fig. 4, an ion trap 1 is installed in the center of a vacuum cavity, and the ion trap 1 is a discrete type blade trap; the blade electrodes of the discrete blade trap are distributed along the Z direction, and one-dimensional ion chains in the ion trap are arranged along the Z direction. When three main axes of the ion trapping potential well generated by the discrete blade electrode have components in the XZ plane, 8 optical windows in the XZ plane can completely meet various laser requirements required by ion quantum coherence control of the ion trap. When a vibration mode in the Y-axis direction perpendicular to the XZ plane exists in the trapping potential generated by the ion trap, the laser incident along the XZ plane only cannot effectively control the vibration mode distributed along the Y-axis direction, and the ion trap needs to be rotated; for example, the ion trap electrode structure is rotated along the X axis by a certain angle, and the vibration mode main axis of the trapping potential generated by the rotated ion trap electrode structure has components on the XZ plane, so that the incident laser in the XZ plane can be ensured to completely meet the control requirement of ion quantum information processing, and the light path design of an ion trap experiment is simplified.
Fig. 5 is a schematic diagram of distribution positions of an ion trap according to another embodiment of the present application, as shown in fig. 5, an ion trap 1 is installed in the center of a vacuum chamber, and the ion trap 1 is a monolithic integrated ion trap; in the monolithic integrated ion trap, a one-dimensional or two-dimensional ion trap lattice structure can be generated in the YZ plane, and the electrode structure of the ion trap lattice structure has a vibration mode vertical to the XZ plane when the electrode structure is symmetrically distributed along the Z direction; this mode will not be effectively cooled and coherently controlled by the laser light in the XZ plane. The integrated electrode structure rotates around the X direction by a certain angle, so that the vibration mode perpendicular to the XZ plane has a certain component on the XZ plane after rotation, thereby realizing that each vibration mode of the ion trap can effectively interact with laser in the XZ plane, and meeting the requirement of an optical path experiment of the ion trap experiment.
According to the ion trap system provided by the embodiment of the application, the structural design of the cavity is optimized on the premise of being compatible with the low-temperature environment requirement. The first optical window and the second optical window are in the same plane (the center of the first optical window and the center of the second optical window are in the same plane), thereby facilitating the design of the optical system required by the low-temperature system. The laser control requirements of ion traps with different configurations can be met, and the ion traps with different types can be effectively compatible. For the situation that vibration modes perpendicular to a main optical plane exist in the ion trap, the effective components of all vibration modes of the ion trap in the optical window plane can be ensured through rotation around the main axis direction of the high numerical aperture window, so that coherent control of all vibration modes is realized; under the configuration, the incident laser in the plane can be ensured to interact with different vibration modes at the same time, so that the quantum control of the laser on the internal state and vibration state of the ion quantum bit is realized. The ion trap system provided by the embodiment of the application can be widely applied to the field of ion quantum information.
"one of ordinary skill in the art will appreciate that all or some of the steps, systems, functional modules/units in the apparatus, and methods disclosed above may be implemented as software, firmware, hardware, and suitable combinations thereof. In a hardware implementation, the division between the functional modules/units mentioned in the above description does not necessarily correspond to the division of physical components; for example, one physical component may have multiple functions, or one function or step may be performed cooperatively by several physical components. Some or all of the components may be implemented as software executed by a processor, such as a digital signal processor or microprocessor, or as hardware, or as an integrated circuit, such as an application specific integrated circuit. Such software may be distributed on computer readable media, which may include computer storage media (or non-transitory media) and communication media (or transitory media). The term computer storage media includes both volatile and nonvolatile, removable and non-removable media implemented in any method or technology for storage of information such as computer readable instructions, data structures, program modules or other data, as known to those skilled in the art. Computer storage media includes, but is not limited to, RAM, ROM, EEPROM, flash memory or other memory technology, CD-ROM, digital Versatile Disks (DVD) or other optical disk storage, magnetic cassettes, magnetic tape, magnetic disk storage or other magnetic storage devices, or any other medium which can be used to store the desired information and which can be accessed by a computer. Furthermore, as is well known to those of ordinary skill in the art, communication media typically embodies computer readable instructions, data structures, program modules or other data in a modulated data signal such as a carrier wave or other transport mechanism and includes any information delivery media. "

Claims (7)

1. An ion trap system, comprising: the ion trap and the vacuum cavity provided with the first optical window; the vacuum cavity is also provided with second optical windows which are symmetrically distributed, and the center of the second optical window and the center of the first optical window are positioned on the same plane; the vacuum cavity further comprises: the flange port of the wedge is used for connecting low temperature Leng Beng;
wherein the first optical window provides an optical pathway for performing a first operation; the second optical window providing an optical pathway for performing a second operation; the second optical window is larger than the first optical window; the first operation includes operations of one or any combination of the following: ion laser cooling, initial state preparation, raman control and fluorescence detection; the second operation includes operations of one or any combination of the following: fluorescence collection, coherent manipulation and independent addressing.
2. The ion trap system of claim 1, wherein the numerical aperture of the second optical window for the vacuum chamber center is greater than a first preset threshold;
wherein the first preset threshold is determined according to the second operation.
3. The ion trap system according to claim 1, wherein a third optical window is further provided on the vacuum chamber along a direction perpendicular to the plane, for incidence of pulsed laser light for performing a third operation;
wherein the third operation comprises laser ablation.
4. The ion trap system of claim 3, wherein the numerical aperture of the third optical window for the center of the vacuum chamber is a preset value;
wherein the preset value is determined according to the third operation.
5. The ion trap system of any of claims 1-4, wherein the vibration mode principal axis of the trapping potential produced by the ion trap has a non-zero component in the plane.
6. The ion trap system of claim 5, wherein the center of the ion trap coincides with the center of the vacuum chamber.
7. The ion trap system of any of claims 1-4, wherein the ion trap comprises any of:
discrete blade traps, monolithic integrated ion traps, and three-dimensional multi-layer ion traps.
CN202110524291.4A 2021-05-13 2021-05-13 Ion trap system Active CN113345617B (en)

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CN103714878A (en) * 2014-01-15 2014-04-09 中国科学院武汉物理与数学研究所 Integrated ion trapping device
CN104637562A (en) * 2015-02-12 2015-05-20 中国科学院武汉物理与数学研究所 Magnetic field device for transferring cold atoms at long distance
CN113962396A (en) * 2021-12-08 2022-01-21 国开启科量子技术(北京)有限公司 Distributed ion trap system

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200739713A (en) * 2006-01-26 2007-10-16 Lam Res Corp Apparatus for shielding process chamber port having dual zone and optical access features
CN103714878A (en) * 2014-01-15 2014-04-09 中国科学院武汉物理与数学研究所 Integrated ion trapping device
CN104637562A (en) * 2015-02-12 2015-05-20 中国科学院武汉物理与数学研究所 Magnetic field device for transferring cold atoms at long distance
CN113962396A (en) * 2021-12-08 2022-01-21 国开启科量子技术(北京)有限公司 Distributed ion trap system

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