CN113342307A

CN113342307A - Integrated unit capable of storing and calculating, processor, electronic equipment, artificial nervous system and preparation method

Info

Publication number: CN113342307A
Application number: CN202110514349.7A
Authority: CN
Inventors: 张晓琨; 向勇; 陶治颖
Original assignee: University of Electronic Science and Technology of China
Current assignee: University of Electronic Science and Technology of China
Priority date: 2021-05-07
Filing date: 2021-05-07
Publication date: 2021-09-03
Anticipated expiration: 2041-05-07
Also published as: CN113342307B

Abstract

An integrated unit capable of storing and calculating, a processor, electronic equipment, an artificial nervous system and a preparation method relate to the field of electronic devices. The preparation method comprises providing a substrate, and forming a first electrode or a second electrode on the surface of the substrate; when the first electrode is formed on the surface of the substrate, sequentially forming an electrolyte layer and a second electrode; when the second electrode is formed on the surface of the substrate, the electrolyte layer and the first electrode are sequentially formed. The method has at least two states, the content of the migratable charged particles in the electrodes corresponds to the potential difference one by one, and/or the content of the migratable charged particles in the electrodes corresponds to the electrode resistance value one by one. The processor, the electronic equipment and the nerve-like system are manufactured according to the energy storage and calculation integrated unit, the structural limitation of the traditional calculation unit is broken through, the integration of energy storage, calculation and information storage is realized, the power consumption is lower, the energy utilization rate is higher, the memory characteristic is realized, and the potential value of the artificial neural network system is realized.

Description

Integrated unit capable of storing and calculating, processor, electronic equipment, artificial nervous system and preparation method

[ technical field ] A method for producing a semiconductor device

The invention relates to the field of electronic devices, in particular to a storage and calculation integrated unit, a processor, electronic equipment, an artificial nervous system and a preparation method.

[ background of the invention ]

With the progress of intelligent technology, ultra-high performance computing systems are increasingly used, and the requirements for computing power are increasingly increased. Meanwhile, the current computer system based on the von neumann architecture is approaching to the limit of moore's law due to the problems of quantum tunneling, overhigh power consumption and the like of silicon-based microelectronic devices. If the computing power of the computer is to be continuously improved, the number of processing units per unit area needs to be continuously increased, and the higher the integration level is, the higher the power consumption is, and the heavier the heat dissipation burden is. The prior art approaches the performance limit gradually, and the space for improving the performance is smaller and smaller.

In view of this, the present application is specifically made.

[ summary of the invention ]

In order to solve the technical problems of limited space for improving computing power and high power consumption of a computing system in the prior art, the embodiment of the invention provides a method for preparing a storage and computation integrated unit, the storage and computation integrated unit, a processor, electronic equipment and a nerve-like system.

The embodiment of the invention provides a preparation method of a storage and calculation integrated unit, which comprises the following steps: providing a substrate, and forming a first electrode or a second electrode on the surface of the substrate; when the first electrode is formed on the surface of the substrate, forming an electrolyte layer on the surface of the first electrode far away from the substrate, and forming a second electrode on the surface of the electrolyte layer far away from the first electrode; when the second electrode is formed on the surface of the substrate, forming an electrolyte layer on the surface of the second electrode far away from the substrate, and forming a first electrode on the surface of the electrolyte layer far away from the second electrode;

the first electrode is used for providing migratable charged particles, and the migratable charged particles can be embedded into or detached from the second electrode under the drive of electric energy; the at least one first electrode and the at least one second electrode have at least two states, under the at least two states, the content of the migratable charged particles of at least one of the first electrode and the second electrode is in one-to-one correspondence with the potential difference between the first electrode and the second electrode, and/or the content of the migratable charged particles of at least one of the first electrode and the second electrode is in one-to-one correspondence with the resistance value thereof.

Preferably, the content of the migratable charged particles in at least one of the first and second electrodes is in a one-to-one correspondence with the potential difference between the first and second electrodes and/or the content of the migratable charged particles in at least one of the first and second electrodes is in a one-to-one correspondence with the resistance thereof, within the range of at least one content of the migratable charged particles in at least one of the first and second electrodes.

Preferably, the potential variation of the first electrode is at least an order of magnitude lower than the potential variation of the second electrode with variation of the same content of migratable charged particles within at least one content range of migratable charged particles of at least one of the first and second electrodes.

Preferably, the first electrode comprises Li, LiMnO₂、LiCoO₂，LiFePO₄At least one of (a); the second electrode includes at least one of C, Cu, Ni, Ti, Ag, Sn, Si, Zn, Au, Ag/C type composite material, Zn/Sn type composite material, Au/Si type composite material.

Preferably, the electrolyte layer is a solid electrolyte layer, the electrolyte layer comprising Li₃N, sulfide solid electrolyte, amorphous borate (Li)₂O-B₂O₃–SiO₂) Silicate (Li)₂O-V₂O₅-SiO₂)、LiPON、Li_3xLa_2/3-xTiO₃(LLTO)，LiNbO₃、LiTaO、Li_1+xM_xTi_2-x(PO₄)₃(LATP)、Li₃OCl、Li₇La₃Zr₂O₁₂(LLZO)、Li_6.4La₃Zr_1.4Ta_0.6O₁₂(LLZTO).

Preferably, the calculation-capable integrated unit preparation method further comprises: when the first electrode is formed on the surface of the substrate, firstly forming a conductive layer on the surface of the substrate, and then forming the first electrode on the surface of the conductive layer away from the substrate; when the second electrode is formed on the surface of the substrate, after the first electrode is formed, a conductive layer is formed on the surface of the first electrode, which is far away from the electrolyte layer; the conductive layer comprises a Pt layer and a Ti layer, and the Ti layer is positioned between the Pt layer and the first electrode; the first electrode is electrically connected with an external circuit through the conductive layer.

Preferably, the second electrode comprises Au-SiO₂Layers and Cu layers, Au-SiO₂The layer is positioned between the Cu layer and the electrolyte layer.

Preferably, the electrolyte layer is formed by extending an edge of the electrolyte layer toward the surface of the substrate or extending the edge of the electrolyte layer beyond an edge of at least one of the first electrode and the second electrode along the surface thereof to substantially separate the first electrode and the second electrode.

Preferably, the calculation-capable integrated unit preparation method further comprises: forming a first drain electrode and a second drain electrode; the first drain electrode is electrically connected with the first electrode, and the second drain electrode is electrically connected with the second electrode.

Preferably, the calculation-capable integrated unit preparation method further comprises: forming a first drain electrode and two second drain electrodes; the first drain electrode is electrically connected with the first electrode, and the two second drain electrodes are respectively arranged at two ends of the second electrode and are electrically connected with the second electrode so as to be used for detecting the resistance of the second electrode.

Preferably, the thickness ratio of the first electrode, the electrolyte layer and the second electrode is 1: (0.1-100): (0.01-100).

Preferably, at least one of the first electrode, the electrolyte layer and the second electrode is patterned by a mask method and then manufactured by physical vapor deposition or additive manufacturing.

In order to further solve the technical problem, an embodiment of the present invention further provides a computable integrated unit, which is prepared according to the above-mentioned method for preparing a computable integrated unit.

In order to further solve the above technical problem, an embodiment of the present invention further provides a processor, which includes the above computing-capable integrated unit.

In order to further solve the above technical problem, an embodiment of the present invention further provides an electronic device, which includes the above computing-capable integrated unit.

In order to further solve the technical problem, an embodiment of the present invention further provides an artificial nervous system, which includes the above-mentioned integrated computing unit.

Compared with the prior art, the technical scheme provided by the embodiment of the invention has the beneficial effects that:

1. the preparation method of the integrated unit capable of storing and calculating provided by the embodiment of the invention can be used for constructing a device structure which has an energy storage function, an information storage function and a calculation function at the same time, and is a brand-new operation architecture.

The battery can be formed by the first electrode, the electrolyte layer and the second electrode, and has the function of storing electric energy. When switching between these at least two states, the content of the migratable charged particles in the electrodes changes, i.e. deintercalation and intercalation of the migratable charged particles between the first electrode and the second electrode occur, which is accompanied by a process of charging or discharging. If the process of discharging is carried out, the process can be driven by the electric energy originally stored in the battery structure; if a charging process occurs, this can be accomplished by an external power source or another battery structure consisting of the first electrode, the electrolyte layer and the second electrode. By controlling the charging and discharging, it is possible to flexibly switch between these states.

Compared with the current von Neumann-based computational separation architecture, the structure limitation of the transistor is broken, and the development potential is huge. Because the energy storage function is achieved, and the migratable charged particles only move between the first electrode and the second electrode, the energy loss is small, and the overall power consumption is greatly reduced.

2. Within the range of at least one content of migratable charged particles of at least one of the first electrode and the second electrode, the content of migratable charged particles of at least one of the first electrode and the second electrode is in a one-to-one correspondence with the potential difference between the first electrode and the second electrode, and/or the content of migratable charged particles of at least one of the first electrode and the second electrode is in a one-to-one correspondence with the resistance value thereof.

In this way, within the range of the content of the at least one migratable charged particle of at least one of the first electrode and the second electrode, the number of state points corresponding to different contents of the migratable charged particle is theoretically infinite, and the number of state points with the required number can be selected according to the actual design requirement, so that each structural unit consisting of the first electrode, the electrolyte layer and the second electrode can be greatly increased to have more distinguishable states, and more complex calculation and storage work can be completed. The larger the number of distinguishable states we have selected, the fewer the number of structural units required to be made up of the first electrode, the electrolyte layer and the second electrode, in the case of achieving a calculated amount of the same scale or a stored amount of the same scale; under the condition that the number of structural units formed by the first electrode, the electrolyte layer and the second electrode is unchanged, the more the number of the selected distinguishable states is, the stronger the calculation capacity and the storage capacity are. This design further expands the performance potential of the structural unit consisting of the first electrode, the electrolyte layer and the second electrode.

3. The potential variation of the first electrode is at least an order of magnitude lower than the potential variation of the second electrode with a variation of the same content of migratable charged particles within at least one content of migratable charged particles of at least one of the first and second electrodes. This enables the potential difference between the first and second electrodes to be detected and controlled more accurately, thereby enabling the respective states to be monitored more accurately.

4. Lithium ions are used as migratable charged particles, and in a certain lithium ion content variation range, the lithium ion content in the electrode and the potential difference are in one-to-one correspondence, so that a plurality of different states can be selected from the lithium ion content and used as the basis for calculation and storage, and the limitation that the traditional transistor has only two states is broken through.

The lithium ion content and the inter-electrode potential difference of the selected electrodes corresponding to the different states are different and are in a continuous relationship, namely, the lithium ion content and the inter-electrode potential difference of the electrodes are continuously changed, so that the lithium ion content of the electrodes is traceable before and after the change, the inter-electrode potential difference becomes different once the lithium ion content of the electrodes is changed, and in the range of the one-to-one corresponding relationship, another point that the potential difference is equal to the potential difference does not exist, namely, each state has independence. In this way, the integrated unit can be stored to have a memory function for the electric charge passing through the integrated unit, namely, the electric charge passing through the integrated unit and the movement direction of the electric charge passing through the integrated unit can be reflected according to the electric potential difference before and after the state change of the integrated unit, so that the information or the change process can be memorized. The method can be used for calculation, information storage and information change process recording, realizes integration of energy storage, calculation and information storage, has the memory characteristic of charges passing through the method, and has the potential of building a neural network.

5. The composite structure layer composed of the Pt layer and the Ti layer enables the charge distribution around the first electrode to be more uniform, and the composite structure layer of the Pt layer and the Ti layer serves as a conductive layer and is beneficial to enabling the migratable charged particles to be more uniformly disengaged from or re-engaged with the first electrode. The Ti layer can also improve the interface adhesion, so that the first electrode is more fully combined with the composite structure layer of the Pt layer and the Ti layer, and the charge transfer is smoother.

6.Au-SiO₂The layer can greatly improve the reversibility of the insertion and the extraction of the lithium ions, and the reduction of the variable concentration range of the lithium ions in the second electrode is avoided, so that the wide variable concentration range of the lithium ions is ensured, and more distinguishable states are provided.

7. The edge of the electrolyte layer extending toward the surface of the substrate, or the edge of the electrolyte layer extending beyond at least one of the first electrode and the second electrode, can substantially isolate the first electrode from the second electrode.

8. Form a first drainage electrode and a second drainage electrode, first drainage electrode and first electrode electric connection, second drainage electrode and second electrode electric connection, like this, just formed both ends device, can distinguish the state through the potential difference that detects between first electrode and the second electrode.

9. Form a first drainage electrode and two second drainage electrodes, first drainage electrode and first electrode electric connection, two second drainage electrodes divide the both ends of locating the second electrode and all with second electrode electric connection in order to be used for detecting the resistance of second electrode, like this, just formed the three-terminal device, can distinguish the state through the resistance that detects the second electrode.

10. By adopting a mask method and a physical vapor deposition/additive manufacturing mode, each functional layer can be conveniently prepared and is convenient to integrate.

11. The integrated unit for storing and calculating breaks through the structural limitation of the traditional calculating unit, realizes the integration of energy storage, calculation and information storage, has smaller power consumption, higher energy utilization rate, lower calculation time delay and stronger calculation power, has the memory characteristic, and has potential value applied to an artificial neural network system.

12. The computing module of the processor has the functions of energy storage, computing and information storage, the whole framework and the structure are more simplified, the size is smaller, the power consumption is lower, the computing time delay is lower, the computing power is stronger, the dependence on external energy is greatly reduced, and the processor can be used for dealing with emergency situations. In addition, the technical limit of the traditional transistor is broken through, the development space is larger, and the artificial neural network system has the value of building an artificial neural network system.

13. The computing module of the electronic equipment has the functions of energy storage, computation and information storage, the whole framework and the structure are more simplified, the size is smaller, the power consumption is lower, the computation time delay is lower, the computing power is stronger, the dependence on external energy is greatly reduced, and the electronic equipment can be used for dealing with emergency situations. In addition, the technical limit of the traditional transistor is broken through, the development space is larger, and the artificial neural network system has the value of building an artificial neural network system.

14. The basic nerve unit of the artificial nervous system has the functions of energy storage, calculation and information storage, the whole framework and the structure are more simplified, the size is smaller, the power consumption is lower, the calculation time delay is lower, the calculation power is stronger, a richer operation space can be provided, the dependence on external energy is greatly reduced, and the functional similarity with the biological nervous system is higher.

[ description of the drawings ]

In order to more clearly illustrate the technical solution of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to these drawings without inventive effort.

Fig. 1 is a schematic structural diagram of a first integrated calculation-capable unit prepared by the method for preparing an integrated calculation-capable unit provided in embodiment 1 of the present invention;

fig. 2 is a schematic structural diagram of a second integrated computing and energy storage unit prepared by the method for preparing an integrated computing and energy storage unit provided in embodiment 1 of the present invention;

FIG. 3 is a schematic structural diagram of a Pt layer prepared by the integrated storage and computation unit preparation method provided in example 1 of the present invention;

FIG. 4 is a schematic structural diagram of a Ti layer prepared by the method for preparing a computationally integrated unit according to example 1 of the present invention;

FIG. 5 is a schematic structural diagram of a Pt layer and a Ti layer prepared by the method for preparing a computing-capable integrated unit according to example 1 of the present invention;

fig. 6 is a schematic structural diagram of a first viewing angle when a first electrode is prepared by the method for preparing a computable integrated unit according to embodiment 1 of the present invention;

fig. 7 is a schematic structural diagram of a second viewing angle when a first electrode is prepared by the method for preparing a computable integrated unit according to embodiment 1 of the present invention;

fig. 8 is a schematic structural diagram of a first viewing angle when an electrolyte layer is prepared by the method for preparing a cost-effective integrated unit according to example 1 of the present invention;

fig. 9 is a schematic structural diagram of a second viewing angle when an electrolyte layer is prepared by the method for preparing a cost-effective integrated unit according to example 1 of the present invention;

FIG. 10 is a schematic structural diagram of another electrolyte layer prepared by the method for preparing a cost-effective integrated cell according to example 1 of the present invention;

FIG. 11 is a schematic structural diagram of another electrolyte layer prepared by the method for preparing a computing-capable integrated unit according to example 1 of the present invention;

FIG. 12 is a schematic structural diagram of a first viewing angle when an Au-SiO2 layer is prepared by the method for preparing a computationally integrated unit according to example 1 of the present invention;

FIG. 13 is a schematic structural diagram of a second viewing angle when an Au-SiO2 layer is prepared by the method for preparing a computationally integrated unit according to example 1 of the present invention;

fig. 14 is a schematic structural diagram of a first viewing angle when a Cu layer is prepared by the method for preparing a computationally integrated unit according to embodiment 1 of the present invention;

fig. 15 is a schematic structural diagram of a second viewing angle when a Cu layer is prepared by the method for preparing a computationally integrated unit according to embodiment 1 of the present invention;

FIG. 16 is a schematic structural view of a first arrangement of the first and second drain electrodes;

FIG. 17 is a schematic structural diagram of a first arrangement of the first and second drain electrodes in which the Cu layer directly serves as the second electrode;

FIG. 18 is a schematic structural view of the first arrangement of the first and second drain electrodes when the Cu layer does not extend to the substrate;

FIG. 19 is a schematic structural view of a second arrangement of the first and second drain electrodes;

FIG. 20 is a schematic structural view of a second arrangement of the first and second drain electrodes using a Cu layer as the second electrode;

FIG. 21 is a schematic structural view of a second arrangement of the first and second drain electrodes in which the Cu layer does not extend to the substrate;

fig. 22 is a schematic structural view of a calculation-capable integrated unit corresponding to a manufacturing method in which a second electrode is formed on a substrate;

fig. 23 is a schematic structural diagram of a calculation-capable integrated unit provided in embodiment 2 of the present invention.

Description of reference numerals:

100-an energy and calculation integrated unit; 110-a substrate; 120-a first electrode; 130-an electrolyte layer; 140-a second electrode; 141-Au-SiO₂A layer; a 142-Cu layer; 142 a-an extension region; a 150-Pt layer; 160-Ti layer; 170-a first drain electrode; 180-second drain electrode.

[ detailed description ] embodiments

In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The contents of the embodiments of the present invention, generally described and illustrated in the figures herein, can be arranged and designed in a wide variety of different configurations.

Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

The examples, in which specific conditions are not specified, were conducted under conventional conditions or conditions recommended by the manufacturer. The reagents or instruments used are not indicated by the manufacturer, and are all conventional products available commercially.

It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.

The terms "first," "second," and the like are used solely to distinguish one from another and are not to be construed as indicating or implying relative importance.

The embodiment of the invention provides a preparation method of a calculation-capable integrated unit, a processor, electronic equipment and a nerve-like system. The description will be specifically made.

Example 1

The embodiment provides a preparation method of a storage and calculation integrated unit, which comprises the following steps: a substrate 110 is provided, and a first electrode 120 or a second electrode 140 is formed on the surface of the substrate 110.

As shown in fig. 1, when the first electrode 120 is formed on the surface of the substrate 110, the electrolyte layer 130 is formed on the surface of the first electrode 120 away from the substrate 110, and the second electrode 140 is formed on the surface of the electrolyte layer 130 away from the first electrode 120.

As shown in fig. 2, when the second electrode 140 is formed on the surface of the substrate 110, the electrolyte layer 130 is formed on the surface of the second electrode 140 away from the substrate 110, and the first electrode 120 is formed on the surface of the electrolyte layer 130 away from the second electrode 140.

In the present embodiment, the first electrode 120 is formed on the surface of the substrate 110.

The first electrode 120 is used to provide migrateable charged particles, and the migrateable charged particles can be embedded into the second electrode 140 through the electrolyte layer 130 under the driving of electric energy, or can be de-embedded from the second electrode 140 after being embedded into the second electrode 140 under the driving of electric energy. In this way, the migrateable charged particles can be alternately inserted and extracted in the first electrode 120 and the second electrode 140. In fact, the content of the migratable charged particles in the first electrode 120 and the content of the migratable charged particles in the second electrode 140 are varied in synchronization, one of which is increased and the other is necessarily decreased.

In the process of embedding or extracting the migratable charged particles into or from the second electrode 140, there are at least two states, under which the contents of the migratable charged particles in the first electrode 120 and the second electrode 140 are different, the content of the migratable charged particles in at least one of the first electrode 120 and the second electrode 140 and the potential difference between the first electrode 120 and the second electrode 140 are in a one-to-one correspondence relationship, and/or the content of the migratable charged particles in at least one of the first electrode 120 and the second electrode 140 and the resistance value thereof are in a one-to-one correspondence relationship. It is understood that the number of these states may be 2, 3, 4, 5, or even more, and may be flexibly selected according to the actual design requirements.

It should be noted that the "one-to-one correspondence" means that the content of the migratable charged particles in at least one of the first electrode 120 and the second electrode 140 in the at least two states is different, the potential difference between the first electrode 120 and the second electrode 140 corresponding to the content of the migratable charged particles in at least one of the first electrode 120 and the second electrode 140 in the two states is also different, and/or the resistance value of the content of the migratable charged particles in at least one of the first electrode 120 and the second electrode 140 in the two states is also different corresponding to the resistance value of the content of the migratable charged particles.

For example: after the content of the mobile charged particles in at least one of the first electrode 120 and the second electrode 140 changes (from one state of the at least two states to the other state), the potential difference between the first electrode 120 and the second electrode 140 changes, and/or the resistance value of at least one of the first electrode 120 and the second electrode 140 changes. In this way, the at least two states can be characterized by the potential difference between the first electrode 120 and the second electrode 140 and/or the resistance value of at least one of the first electrode 120 and the second electrode 140 in the at least two states, i.e., the at least two states can be distinguished by the potential difference between the first electrode 120 and the second electrode 140 and/or the resistance value of at least one of the first electrode 120 and the second electrode 140, and then the calculation, such as "0, 1 calculation" can be performed by the transition between the at least two states, and the storage and characterization of information can also be realized by the transition between the at least two states. By integrating a large number of basic structures consisting of the first electrode 120, the electrolyte layer 130, and the second electrode 140, complicated arithmetic operations and information storage operations can be performed.

It is understood that in the at least two states, the at least two states can be characterized as long as at least one of the potential difference between the electrodes and the resistance value of the electrodes has a different value.

The at least two states can be characterized by the potential difference between the first electrode 120 and the second electrode 140, the at least two states can also be characterized by the resistance of the electrodes, and of course, the at least two states can also be characterized by the potential between the first electrode 120 and the second electrode 140 and the resistance of the electrodes at the same time.

Through the above design, the first electrode 120, the electrolyte layer 130 and the second electrode 140 can constitute a battery, and have a function of storing electric energy. When switching between these at least two states, the content of the migratable charged particles of the second electrode 140 changes, i.e., deintercalation and intercalation of the migratable charged particles occur between the first electrode 120 and the second electrode 140, which may be accompanied by a process of charging or discharging. If the process of discharging is carried out, the process can be driven by the electric energy originally stored in the battery structure; if a charging process occurs, this may be accomplished by an external power source or another battery structure consisting of the first electrode 120, the electrolyte layer 130, and the second electrode 140. By controlling the charging and discharging, it is possible to flexibly switch between these states.

The preparation method of the integrated unit capable of storing and calculating can build a device structure with an energy storage function, an information storage function and a calculation function at the same time, and is a brand new operation framework. Compared with the current von Neumann-based computational separation architecture, the structure limitation of the transistor is broken, and the development potential is huge. Because the energy storage function is achieved, and the migratable charged particles only move between the first electrode 120 and the second electrode 140, the energy loss is small, and the overall power consumption is greatly reduced.

In order to make the structure formed by the first electrode 120, the electrolyte layer 130 and the second electrode 140 have more distinguishable states, when the materials of the first motor and the second electrode 140 are selected, the content of the migratable charged particles in at least one of the first electrode 120 and the second electrode 140 and the potential difference between the first electrode 120 and the second electrode 140 are in a one-to-one correspondence relationship, and/or the content of the migratable charged particles in at least one of the first electrode 120 and the second electrode 140 and the resistance value thereof are in a one-to-one correspondence relationship within the content range of at least one of the migratable charged particles in at least one of the first electrode 120 and the second electrode 140.

In this way, within the range of the content of the at least one migratable charged particle in at least one of the first electrode 120 and the second electrode 140, the number of state points corresponding to different contents of the migratable charged particle is theoretically infinite, and the number of state points in a required number can be selected according to actual design requirements, so that each structural unit composed of the first electrode 120, the electrolyte layer 130 and the second electrode 140 can be greatly increased to have more distinguishable states, and more complex calculation and storage work can be completed. The larger the number of distinguishable states we have chosen, the smaller the number of structural units required to be composed of the first electrode 120, the electrolyte layer 130 and the second electrode 140 in the case of realizing a calculated amount on the same scale or a stored amount on the same scale; in the case where the number of the structural units formed by the first electrode 120, the electrolyte layer 130, and the second electrode 140 is not changed, the larger the number of the distinguishable states selected, the stronger the calculation capability and the storage capability. This design further expands the performance potential of the structural unit consisting of the first electrode 120, the electrolyte layer 130 and the second electrode 140.

In order to enable the potential difference between the first electrode 120 and the second electrode 140 to be detected and controlled more accurately, the potential variation of the first electrode 120 is at least an order of magnitude lower than the potential variation of the second electrode 140 in the case of the same content variation of the migratable charged particles within at least one content range of the migratable charged particles of at least one of the first electrode 120 and the second electrode 140 as described above. It should be noted that "one order of magnitude lower" means that the index of 10 is 1 less in magnitude when the value of the change in potential is expressed by scientific expression.

It will be appreciated that the potential change of the first electrode 120 may be one order of magnitude, two orders of magnitude, three orders of magnitude, or even more than the potential change of the second electrode 140 with the same content of migrateable charged particles varying, and is not limited thereto, and in general, the smaller the potential change of the first electrode 120 compared to the potential change of the second electrode 140, the more advantageous it is for accurate detection and control of the potential difference between the first electrode 120 and the second electrode 140, thereby enabling the respective states to be monitored more accurately.

Alternatively, the specific material of the first electrode 120 may be selected such that the potential of the first electrode 120 is kept relatively constant in the range of at least one content of the migratable charged particles of at least one of the first electrode 120 and the second electrode 140, i.e. the potential of the first electrode 120 is substantially constant with the content of the migratable charged particles. At this time, the change in the potential difference between the first electrode 120 and the second electrode 140 is mainly determined by the potential of the second electrode 140, which facilitates accurate monitoring of the potential difference between the first electrode 120 and the second electrode 140.

Specifically, the material of the substrate 110 is Si 100, the substrate 110 is cut into a square with a side length of 4 inches, and the substrate 110 is cleaned with absolute ethyl alcohol.

Referring to fig. 3, 4 and 5, before forming the first electrode 120 on the surface of the substrate 110, a Pt electrode array pattern is first formed on the surface of the substrate 110 by applying a photoresist, exposing, cleaning and developing, Pt is plated on the Pt electrode array pattern on the surface of the substrate 110 by magnetron sputtering, and Ti is plated on the Pt electrode array pattern, so that the Ti layer 160 is located on a side of the Pt layer 150 away from the substrate 110. Wherein the sum of the thicknesses of the Pt layer 150 and the Ti layer 160 can be controlled to be 50nm-2 μm. The area of the Pt layer 150 is the same as that of the Ti layer 160, and both are square, and the side length can be controlled in the range of 4nm to 50 μm, but is not limited thereto.

The operation steps for preparing the Pt layer 150 and the Ti layer 160 by magnetron sputtering include, but are not limited to:

mounting a Pt target, and putting the Pt target into the substrate 110;

pumping the air pressure in the cavity to 5 x 10^-4Pa below;

introducing argon gas, adjusting the air pressure of the cavity to 2Pa, setting the power of Pt to 30W, and adjusting the air pressure to 1Pa after starting;

pre-sputtering for 10min to remove impurities on the surface of the target, and then performing thin film sputtering for 20 min;

and (3) replacing the Ti target material for sputtering, setting the sputtering power of Ti to be 20W, and setting the sputtering time to be 20 min.

By performing the above process before forming the first electrode 120, the charge distribution around the first electrode 120 can be more uniform by the composite structure layer of the Pt layer 150 and the Ti layer 160, and the composite structure layer of the Pt layer 150 and the Ti layer 160 serves as a conductive layer, which helps to more uniformly de-embed or re-embed the migratable charged particles from or into the first electrode 120. In addition, the Ti layer 160 can improve the interface adhesion, so that the first electrode 120 is more fully combined with the composite structure of the Pt layer 150 and the Ti layer 160, and the charge transfer is smoother.

Referring to fig. 6 and 7, after the composite structure layer of the Pt layer 150 and the Ti layer 160 is formed, a pattern of the first electrode 120 is formed on a surface of the Ti layer 160 away from the substrate 110 by applying a photoresist, exposing, cleaning, and developing, in this embodiment, the first electrode 120 is formed by LiCoO₂I.e. using LiCoO₂Lithium ions are provided as migratable charged particles, and the state is switched by the insertion and extraction of lithium ions between the electrodes.

Plating LiCoO on the pattern of the first electrode 120 by means of magnetron sputtering₂To form the first electrode 120, the thickness of the first electrode 120 may be controlled to be 1nm-100 μm, the first electrode 120 has a square shape, the side length may be controlled to be 2nm-45 μm, one side edge of the first electrode 120 is flush with one side edge (side a shown in fig. 6) of the composite structure layer of the Pt layer 150 and the Ti layer 160, and the first electrode 120 is disposed at an intermediate position of the side edge of the composite structure layer a of the Pt layer 150 and the Ti layer 160, but is not limited thereto.

The operation steps for preparing the first electrode 120 by magnetron sputtering include, but are not limited to:

mounting LiCoO₂A target material;

pumping the air pressure in the cavity to 5 x 10^-4Pa below;

introducing argon and oxygen, wherein the flow of the argon is 200sccm, the flow of the oxygen is 5sccm, adjusting the air pressure of the cavity to 2Pa, and setting LiCoO₂The power of the gas cylinder is 100W, and the gas pressure is adjusted to 1Pa after the gas cylinder is started;

pre-sputtering for 10min to remove impurities on the surface of the target, and then performing thin film sputtering for 40 min.

The area of the first electrode 120 is smaller than the composite structure layer of the Pt layer 150 and the Ti layer 160, and a certain space is reserved on the composite structure layer of the Pt layer 150 and the Ti layer 160, so that the formation of the drainage electrode is facilitated.

Referring to fig. 8 and 9, after the first electrode 120 is formed, a pattern of the electrolyte layer 130 is formed on a surface of the first electrode 120 away from the substrate 110 by applying a photoresist, exposing, cleaning, and developing, in this embodiment, the electrolyte layer 130 is a solid electrolyte layer, and LiPON is plated on the pattern of the electrolyte layer 130 by magnetron sputtering to form the electrolyte layer 130, wherein the thickness of the electrolyte layer 130 can be controlled to be 1nm-10 μm.

Note that the edge of the electrolyte layer 130 near the a side extends toward the surface of the substrate 110, and the other edge extends beyond the edge of the first electrode 120 to sufficiently separate the first electrode 120 from the second electrode 140.

It is understood that in other embodiments of the present invention, all edges of the electrolyte layer 130 may extend all around directly along the surface of the electrolyte layer 130 beyond the edge of the first electrode 120 to substantially shield the first electrode 120, as shown in fig. 10; or both may extend toward the surface of the substrate 110 to encapsulate the first electrode 120, as shown in fig. 11. Both of these ways can substantially isolate the first electrode 120 from the second electrode 140. It should be noted that if the edge of the electrolyte layer 130 extends toward the surface of the substrate 110, the edge thereof near the a side may extend to the surface of the substrate 110, or may be spaced from the surface of the substrate 110; while the remaining edges may extend to the surface of the Ti layer 160 or may be spaced apart from the surface of the Ti layer 160.

The operation steps for preparing the electrolyte layer 130 by magnetron sputtering include, but are not limited to:

installing a LiPON target material;

pumping the air pressure in the cavity to 5 x 10^-4Pa below;

introducing nitrogen with the flow rate of 50sccm, adjusting the air pressure of the cavity to 2Pa, setting the power of the LiPON to 100W, and adjusting the air pressure to 1Pa after starting;

pre-sputtering for 10min to remove impurities on the surface of the target, and then performing thin film sputtering for 60 min.

Referring to figures 12 and 13 of the drawings,after the formation of the electrolyte layer 130 is completed, a second electrode is formed. In this embodiment, the second electrode is made of Au-SiO₂And a bilayer structure of Cu. Au-SiO is developed on the surface of the electrolyte layer 130 far away from the first electrode 120 by means of photoresist coating, exposure, cleaning and development₂The pattern is formed on Au-SiO by means of magnetron sputtering₂The pattern of (A) is plated with Au-SiO₂To form the first layer of the second electrode, the thickness of the Au — SiO2 layer 141 may be controlled to be 0.5nm-100 μm. Au-SiO₂The layer 141 is square and has the same area as the first electrode 120, Au-SiO₂One side edge of layer 141 is flush with the a-side edge, and Au-SiO₂The layer 141 is provided at an intermediate position of the a-side edge, but is not limited thereto.

Due to Au-SiO₂The layer 141 has the same shape and area as the first electrode 120, and the electrolyte layer 130 can sufficiently separate the first electrode 120 from the second electrode.

Wherein, the Au-SiO is prepared by magnetron sputtering₂The operational steps of layer 141 include, but are not limited to:

mounting Au target and SiO₂A target material;

pumping the air pressure in the cavity to 5 x 10^-4Pa below;

introducing argon gas, adjusting the flow of the argon gas to 200sccm, adjusting the air pressure of the cavity to 2Pa, setting the power of Au to 30W, and setting SiO₂The power of the air pressure adjusting device is 150w, and the air pressure is adjusted to 1Pa after the air pressure adjusting device is started;

pre-sputtering for 10min to remove impurities on the surface of the target, and then performing thin film sputtering for 30 min.

In addition, Au-SiO₂The layer 141 can greatly improve the reversibility of insertion and extraction of lithium ions, and prevent the variable concentration range of lithium ions in the second electrode from being narrowed, thereby ensuring that there is a sufficiently wide variable concentration range of lithium ions, which helps to provide more distinguishable states.

Referring to FIGS. 14 and 15, Au-SiO₂After the layer 141 is formed, a second layer of the second electrode 140 is formed. Coating photoresist, exposing, cleaning and developing on Au-SiO₂The side of layer 141 remote from electrolyte layer 130The surface shows the pattern of the Cu layer 142, Cu is plated on the pattern of the Cu layer 142 by means of magnetron sputtering to form a second layer of the second electrode 140, and the thickness of the Cu layer 142 can be controlled between 0.5nm and 100 μm.

The edge of the Cu layer 142 near the a side extends toward the surface of the substrate 110 and extends to the surface of the substrate 110, and the Cu layer 142 continues to extend in the direction away from the a side on the surface of the substrate 110 to form an extension region 142a for forming a drain electrode. The other edge of the Cu layer 142 extends beyond the Au-SiO₂The edge of layer 141.

Lithium ion intercalation and deintercalation mainly occur in Au-SiO₂Layers 141, 142 are primarily for conducting electricity to enable charge on Au — SiO₂The layer 141 is distributed more uniformly, so that the lithium ions are more uniformly inserted and extracted, and the Cu layer 142 effectively improves Au-SiO₂The conductive capability of layer 141.

In other embodiments of the present invention, the Cu layer 142 may not extend to the surface of the substrate 110, and only Au — SiO may be used₂The layer 141 may be covered, and the drain electrode may be formed directly on the Cu layer 142 away from the Au-SiO₂One side of layer 141. And is not limited thereto.

The operation steps for preparing the Cu layer 142 by magnetron sputtering include, but are not limited to:

mounting a Cu target;

pumping the air pressure in the cavity to 5 x 10^-4Pa below;

introducing argon gas, adjusting the air pressure of the cavity to 2Pa, setting the power of Cu to 30W, and adjusting the air pressure to 1Pa after starting;

Through the design, in a certain lithium ion content variation range, the lithium ion content in the electrode and the potential difference between the electrodes are in one-to-one correspondence, so that a plurality of different states can be selected from the lithium ion content in the electrode and used as the basis for calculation and storage, and the limitation that the traditional transistor only has two states is broken through.

The lithium ion content and the inter-electrode potential difference of the selected electrodes corresponding to the different states are different and are in a continuous monotone change relationship, namely the lithium ion content in the electrodes and the inter-electrode potential difference are continuously monotone changed, so that the lithium ion content in the electrodes is traceable before and after the change, the inter-electrode potential difference becomes different once the lithium ion content in the electrodes is changed, and no point exists in the one-to-one corresponding relationship range where another potential difference is equal to the potential difference, namely, each state has independence. In this way, the integrated unit has a memory function for the electric charges passing through it, or the integrated unit has a memory function for the charging and discharging processes of it, that is, according to the potential difference before and after the state change, the electric charge passing through it and the moving direction of the electric charges passing through it can be reflected, or the charging/discharging amount of it can be reflected, so as to realize the memory of the information or the changing process. The characteristic can be used for calculation, information storage and information change process recording, realizes integration of energy storage, calculation and information storage, has the memory characteristic of charges passing through the characteristic, and has the potential of building a neural network.

The first electrode 120 may include Li and LiMnO₂、LiCoO₂，LiFePO₄At least one of (a). The second electrode 140 may be a composite material including at least one of C, Cu, Ni, Ti, Ag, Sn, Si, Zn, Au, Ag/C type composite material, Zn/Sn type composite material, and Au/Si type composite material. The electrolyte layer 130 may include Li₃N, sulfide solid electrolyte, amorphous borate (Li)₂O-B₂O₃–SiO₂) Silicate (Li)₂O-V₂O₅-SiO₂)、LiPON、Li_3xLa_2/3-xTiO₃(LLTO)，LiNbO₃、LiTaO、Li_1+xM_xTi_2-x(PO₄)₃(LATP)、Li₃OCl、Li₇La₃Zr₂O₁₂(LLZO)、Li_6.4La₃Zr_1.4Ta_0.6O₁₂(LLZTO)At least one, and not limited thereto. Notably, the choice of electrolyte layer 130 needs to be tailored to the migratable charged particles used.

Among them, the Ag/C type composite material may be a hard carbon composite film in which silver nanoparticles are embedded, but is not limited thereto; the Zn/Sn-based composite material may be an alloy film of Zn and Sn, an Sn film containing Zn nanoparticles, or the like, and is not limited thereto; the Au/Si type composite material may be Au-SiO₂A layer, a Si film containing Au nanoparticles, a co-deposited film of Au and Si, and the like, without being limited thereto.

Au-SiO₂The layer may be Au or SiO₂The composite film formed by co-sputtering can also be SiO containing Au nano-particles or Au microcrystalline dispersed phase₂And (3) a membrane.

The first electrode 120, the electrolyte layer 130, and the second electrode 140 may have a one-layer structure made of one material or a multi-layer structure made of a plurality of materials.

It should be noted that in other embodiments of the present invention, the migrateable charged particles may be ions, charged groups, polarized dipole particles, micro-scale particles with a net charge, and the like. In addition to the above-mentioned lithium ions, the migrateable charged particles may employ sodium ions, calcium ions, potassium ions, aluminum ions, fluorine ions, silver ions, copper ions, phosphate ions, and the like, and are not limited thereto.

Further, it is to be noted that the above-described preparation process is merely exemplary, and the substrate 110, the Pt layer 150, the Ti layer 160, the first electrode 120, the electrolyte layer 130, the Au — SiO layer are₂The shapes, side lengths, thicknesses, and the like of the layer 141 and the Cu layer 142 may be different, and may be flexibly adjusted according to actual design requirements. The area, the side length and the thickness of each functional layer can be smaller or larger according to actual design requirements, and the functional layers can be increased or decreased according to the actual design requirements.

The thickness ratio of the first electrode 120, the electrolyte layer 130, and the second electrode 140 may be controlled to be 1: (0.1-100): (0.01-100). It is understood that the thickness ratio of the first electrode 120, the electrolyte layer 130, and the second electrode 140 may be 1: 0.1: 0.01, 1: 1: 0.1, 1: 10: 1. 1: 100: 100. 1: 100: 10. 1: 10: 100, etc., and is not limited thereto.

The Pt layer 150, the Ti layer 160, the first electrode 120, the electrolyte layer 130, and Au-SiO were formed₂Other types of physical vapor deposition methods, such as vacuum evaporation, ion plating, etc., may also be used for layer 141 and Cu layer 142. In addition, other masking methods may be used to form the pattern, and additive manufacturing may be used to form the functional layers. And is not limited thereto.

Referring to fig. 16, the method for preparing the integrated storable unit further includes: a first drain electrode 170 and a second drain electrode 180 are formed. The first drain electrode 170 is formed on a surface of the Ti layer 160 away from the substrate 110, and is electrically connected to the first electrode 120 through a composite structure layer of the Pt layer 150 and the Ti layer 160. The second drain electrode 180 is formed on a surface of the extension region 142a of the Cu layer 142 away from the substrate 110, and electrically connected to the second electrode 140. In this way, a two-terminal device is formed, and states can be distinguished by detecting a potential difference between the first electrode 120 and the second electrode 140. The first drain electrode 170 and the second drain electrode 180 are both made of Pt materials, electrode patterns can be formed on the first drain electrode 170 and the second drain electrode 180 by a mask method, and the first drain electrode 170 and the second drain electrode 180 are formed by physical vapor deposition.

Referring to FIG. 17, Au-SiO may not be provided₂ Layer 141, and Cu layer 142 is used directly as the second electrode. In this way, a two-terminal device is also formed, and states can be distinguished by detecting a potential difference between the first electrode 120 and the second electrode 140. It is understood that the Cu layer 142 may not extend to the substrate 110, as shown in fig. 18.

Referring to fig. 19, it should be noted that, in other embodiments of the present invention, a first drain electrode 170 and two second drain electrodes 180 may also be formed. The first drain electrode 170 is formed on a surface of the Ti layer 160 away from the substrate 110, and is electrically connected to the first electrode 120 through a composite structure layer of the Pt layer 150 and the Ti layer 160. Two second current-guiding electrodes 180 are respectively arranged on Au-SiO₂Two of the layer 141Both ends are bonded with Au-SiO₂Layer 141 is electrically connected for detection of Au-SiO₂The resistance value of layer 141. At this time, the Cu layer 142 may not be provided. Thus, a three-terminal device is formed, which can be detected by Au-SiO₂The resistance of the layer 141 distinguishes the states.

Of course, Au-SiO may not be provided₂The layer 141 is directly used as the second electrode by using the Cu layer 142, as shown in fig. 20, at this time, two second drain electrodes 180 are respectively disposed at two ends of the Cu layer 142 and are electrically connected to the Cu layer 142. In this way, a three-terminal device is also formed, and states can be distinguished by detecting the resistance value of the Cu layer 142. It is understood that the Cu layer 142 may not extend to the substrate 110, as shown in fig. 21.

Referring to fig. 22, if the second electrode 140 is formed on the substrate 110, the Cu layer 142 and the Au — SiO layer may be formed on the surface of the substrate 110 in sequence₂Layer 141, electrolyte layer 130, first electrode 120, Ti layer 160, and Pt layer 150. It can be seen that the order of the layers is reversed. The Pt layer 150 may or may not extend to the surface of the substrate 110.

Example 2

Referring to fig. 23, the embodiment provides a cost-effective integrated unit 100, which is prepared by the method for preparing the cost-effective integrated unit 100 provided in embodiment 1.

The integrated battery storage and calculation unit 100 has a battery structure using lithium ions as a medium, and has a function of storing electric energy. When lithium ions are intercalated and deintercalated between the first electrode 120 and the second electrode 140, the content of lithium ions in the electrodes may be changed, which may cause a change in the potential difference between the first electrode 120 and the second electrode 140. Different lithium ion contents in the electrodes indicate that the battery structure is in different states, and the different states correspond to different potential differences, so that the different states can be characterized by means of the potential differences, and the different states can be distinguished.

When switching between these at least two states, the content of the migratable charged particles of the second electrode 140 changes, i.e., deintercalation and intercalation of the migratable charged particles occur between the first electrode 120 and the second electrode 140, which may be accompanied by a process of charging or discharging. If the process of discharging is carried out, the process can be driven by the electric energy originally stored in the battery structure; if a charging process occurs, this may be accomplished by an external power source or another battery structure consisting of the first electrode 120, the electrolyte layer 130, and the second electrode 140. By controlling the charging and discharging, it is possible to flexibly switch between these states. The calculation can be done by means of transitions between states, and the storage and characterization of information can also be achieved by means of transitions between states. By integrating a large number of the calculation-capable integrated units 100, complicated calculation work and information storage work can be completed.

In the conventional von neumann-based infrastructure, the memory and the processing unit are separated from each other and belong to different units, and the reading speed of information and the total amount of information that can be read per unit time by the processing unit also limit the performance of the processing unit. In order to improve the performance of the processing unit, a way of setting a multi-level cache is adopted at present, which not only increases the overall power consumption, but also increases the overall volume.

On the other hand, in order to further improve the performance of the existing processing unit, the integration level of the unit area is continuously increased, and the operating frequency of the processor is improved, so that not only is the power consumption obviously improved, but also the situations of heat accumulation and local burst of heat are easily caused, the requirement on heat dissipation is very high, and the risk of overheating and melting down of the processing unit is increased. This not only increases the energy consumption, but also makes the technical difficulty of heat dissipation very high.

In addition, the existing processing unit is in the form of an integrated transistor, the circuit path of the existing processing unit is very long, the heat generation is very serious, and the power loss ratio is very high. Furthermore, once the operation is started, the processing unit and the storage unit need to be continuously powered, and the dependence on external energy sources is very high.

The computing-capable integrated unit 100 breaks the limitations of the traditional infrastructure and employs an electrochemical-like cell structure. In the working process, when the state is switched, lithium ions only move between the first electrode 120 and the second electrode 140, the movement path is very short, the energy dissipation is very little, the overall energy loss is reduced, the energy efficiency ratio is improved, the calculation time delay is lower, and the calculation force is stronger.

The energy storage and calculation integrated unit 100 itself has an effect of storing electric energy, and during operation, state switching can be realized by consuming the electric energy stored by itself. Particularly, when a large number of the energy storage/integration units 100 are integrated, the state switching of each energy storage/integration unit 100 may use not only the electric energy stored in itself but also the electric energy stored in the surrounding energy storage/integration units 100. In this way, it may be that the integrated accountability unit 100 can operate without external energy supply for a certain period of time, reducing the dependence on external energy.

In addition, the lithium ion content in the electrode of the calculation integration unit 100 and the potential difference are in one-to-one correspondence in a certain lithium ion content variation range, so that a plurality of different states can be selected from the lithium ion content and the potential difference as the basis for calculation and storage, and the limitation that the traditional transistor only has two states is broken through.

The lithium ion content and the inter-electrode potential difference of the selected electrodes corresponding to the different states are different and are in a continuous relationship, namely, the lithium ion content and the inter-electrode potential difference of the electrodes are continuously and monotonically changed, so that the lithium ion content of the electrodes is traceable before and after the change, the inter-electrode potential difference becomes different once the lithium ion content of the electrodes is changed, and no point exists where another potential difference is equal to the potential difference within the one-to-one relationship range, namely, each state has independence. In this way, the integrated unit 100 can be stored to have a "memory" function for the electric charges passing through it, that is, according to the electric potential difference before and after the state change, the electric charge passing through it and the moving direction of the electric charges passing through can be reflected, and information or change process can be "memorized". The method can be used for calculation, information storage and information change process recording, realizes integration of energy storage, calculation and information storage, has the memory characteristic of charges passing through the method, and has the potential of building a neural network.

When the energy storage and calculation integrated unit 100 is used, the internally stored electric energy is gradually reduced, and the external energy can be used for supplement. If the energy-computing integrated unit 100 is directly charged with energy by using external energy, the information originally stored in the energy-computing integrated unit 100 is erased once.

If the information originally stored in the energy-storage-computation-integrated unit 100 needs to be stored, when the state of the energy-storage-computation-integrated unit 100 changes, the energy released by the energy-storage-computation-integrated unit can be used for charging another energy-storage-integrated device, and the state of the energy-storage-integrated device is recorded, so that the original stored information is prevented from being lost. The integrated storage and calculation unit 100 can also supplement the electric quantity required in the working process each time when working, so that the integrated storage and calculation unit can smoothly complete the calculation, the information continuity can be maintained, and the information loss can be prevented.

In general, the energy storage and computation integrated unit 100 breaks through the architectural limitation of the traditional computation unit, realizes the integration of energy storage, computation and information storage, has smaller power consumption and higher energy utilization rate, has a memory characteristic, and has a potential value of being applied to an artificial neural network system.

Note that the calculation-capable integrated unit 100 may be prepared by a modified embodiment of example 1, and is not limited thereto.

Example 3

The present embodiment provides a processor including the integrated calculation-capable unit 100 provided in embodiment 2, wherein the integrated calculation-capable unit 100 serves as a basic calculation unit, and the integrated calculation-capable unit 100 is integrated into a calculation module capable of constituting the processor.

The computing module of the processor has the functions of energy storage, computing and information storage, the whole framework and the structure are more simplified, the size is smaller, the power consumption is lower, the computing time delay is lower, the computing power is stronger, the dependence on external energy is greatly reduced, and the processor can be used for dealing with emergency situations. In addition, the technical limit of the traditional transistor is broken through, the development space is larger, and the artificial neural network system has the value of building an artificial neural network system.

Example 4

The present embodiment provides an electronic device including the integrated calculation-capable unit 100 provided in embodiment 2, wherein the integrated calculation-capable unit 100 serves as a basic calculation unit, and the integrated calculation-capable unit 100 is integrated into a calculation module that can constitute the electronic device.

The computing module of the electronic equipment has the functions of energy storage, computation and information storage, the whole framework and the structure are more simplified, the size is smaller, the power consumption is lower, the computation time delay is lower, the computing power is stronger, the dependence on external energy is greatly reduced, and the electronic equipment can be used for dealing with emergency situations. In addition, the technical limit of the traditional transistor is broken through, the development space is larger, and the artificial neural network system has the value of building an artificial neural network system.

Example 5

The present embodiment provides an artificial nervous system including the computable integration unit 100 provided in embodiment 2, and the computable integration unit 100 may serve as a basic nervous unit of the artificial nervous system.

The basic nerve unit of the artificial nervous system has the functions of energy storage, calculation and information storage, the whole framework and the structure are more simplified, the size is smaller, the power consumption is lower, the calculation time delay is lower, the calculation power is stronger, a richer operation space can be provided, the dependence on external energy is greatly reduced, and the functional similarity with the biological nervous system is higher.

In summary, compared with the prior art, the technical solution provided by the embodiment of the present invention has the following beneficial effects:

The battery can be formed by the first electrode, the electrolyte layer and the second electrode, and has the function of storing electric energy. When switching between these at least two states, the content of the migratable charged particles of the second electrode changes, i.e. deintercalation and intercalation of the migratable charged particles between the first electrode and the second electrode occur, which is accompanied by a process of charging or discharging. If the process of discharging is carried out, the process can be driven by the electric energy originally stored in the battery structure; if a charging process occurs, this can be accomplished by an external power source or another battery structure consisting of the first electrode, the electrolyte layer and the second electrode. By controlling the charging and discharging, it is possible to flexibly switch between these states.

2. Within the range of at least one content of the migratable charged particles in the second electrode, the content of the migratable charged particles in the second electrode is in one-to-one correspondence with the potential difference between the first electrode and the second electrode, and/or the content of the migratable charged particles in the second electrode is in one-to-one correspondence with the resistance value of the second electrode.

In this way, within the range of the content of the at least one migratable charged particle of the second electrode, the number of the state points corresponding to different migratable charged particle contents is theoretically infinite, and the number of the state points with the required number can be selected according to the actual design requirement, so that each structural unit consisting of the first electrode, the electrolyte layer and the second electrode can be greatly increased to have more distinguishable states, and more complex calculation and storage work can be completed. The larger the number of distinguishable states we have selected, the fewer the number of structural units required to be made up of the first electrode, the electrolyte layer and the second electrode, in the case of achieving a calculated amount of the same scale or a stored amount of the same scale; under the condition that the number of structural units formed by the first electrode, the electrolyte layer and the second electrode is unchanged, the more the number of the selected distinguishable states is, the stronger the calculation capacity and the storage capacity are. This design further expands the performance potential of the structural unit consisting of the first electrode, the electrolyte layer and the second electrode.

3. The potential variation of the first electrode is at least an order of magnitude lower than the potential variation of the second electrode within the range of at least one content of migratable charged particles of the second electrode with a variation of the same content of migratable charged particles. This enables the potential difference between the first and second electrodes to be detected and controlled more accurately, thereby enabling the respective states to be monitored more accurately.

11. The integrated unit for storing and calculating breaks through the structural limitation of the traditional calculating unit, realizes the integration of energy storage, calculation and information storage, has smaller power consumption, lower calculation time delay, stronger calculation power and higher energy utilization rate, has the memory characteristic, and has potential value applied to an artificial neural network system.

The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A method for preparing a storage and calculation integrated unit is characterized by comprising the following steps:

providing a substrate, and forming a first electrode or a second electrode on the surface of the substrate;

when the first electrode is formed on the surface of the substrate, forming an electrolyte layer on the surface of the first electrode far away from the substrate, and forming a second electrode on the surface of the electrolyte layer far away from the first electrode;

when the second electrode is formed on the surface of the substrate, forming an electrolyte layer on the surface of the second electrode far away from the substrate, and forming the first electrode on the surface of the electrolyte layer far away from the second electrode;

wherein the first electrode is used for providing migrateable charged particles which can be driven by electric energy to be embedded into or extracted from the second electrode;

having at least two states in which the content of migratable charged particles of at least one of the first and second electrodes is in a one-to-one correspondence with the potential difference between the first and second electrodes and/or the content of migratable charged particles of at least one of the first and second electrodes is in a one-to-one correspondence with the resistance thereof.

2. The integrated calculation-able unit manufacturing method according to claim 1, wherein the content of the migratable charged particles in at least one of the first electrode and the second electrode is in one-to-one correspondence with the potential difference between the first electrode and the second electrode and/or the content of the migratable charged particles in at least one of the first electrode and the second electrode is in one-to-one correspondence with the resistance value thereof, within the range of the content of at least one migratable charged particle in at least one of the first electrode and the second electrode.

3. The method of claim 2, wherein the change in potential of the first electrode is at least an order of magnitude lower than the change in potential of the second electrode with a change in the same content of migratable charged particles within the at least one content of migratable charged particles of at least one of the first and second electrodes.

4. The method of making a computable integrated unit of claim 1, wherein the method comprisesThe first electrode comprises Li and LiMnO₂、LiCoO₂，LiFePO₄At least one of (a); the second electrode includes at least one of C, Cu, Ni, Ti, Ag, Sn, Si, Zn, Au, Ag/C type composite material, Zn/Sn type composite material, Au/Si type composite material.

5. The method of claim 4, wherein the electrolyte layer is a solid electrolyte layer comprising Li₃N, sulfide solid electrolyte, amorphous borate (Li)₂O-B₂O₃–SiO₂) Silicate (Li)₂O-V₂O₅-SiO₂)、LiPON、Li_3xLa_2/3-xTiO₃(LLTO)，LiNbO₃、LiTaO、Li_1+xM_xTi_2-x(PO₄)₃(LATP)、Li₃OCl、Li₇La₃Zr₂O₁₂(LLZO)、Li_6.4La₃Zr_1.4Ta_0.6O₁₂(LLZTO).

6. The method of manufacturing a computable integrated unit of claim 4, further comprising:

when the first electrode is formed on the surface of the substrate, firstly forming a conductive layer on the surface of the substrate, and then forming the first electrode on the surface of the conductive layer away from the substrate;

when the second electrode is formed on the surface of the substrate, after the first electrode is formed, a conductive layer is formed on the surface of the first electrode far away from the electrolyte layer;

the conductive layer comprises a Pt layer and a Ti layer, and the Ti layer is positioned between the Pt layer and the first electrode; the first electrode is electrically connected with an external circuit through the conductive layer.

7. Method for preparing a computable integrated unit according to claim 4Wherein the second electrode comprises Au-SiO₂A layer and a Cu layer, the Au-SiO₂A layer is located between the Cu layer and the electrolyte layer.

8. The method of claim 1, wherein the electrolyte layer is formed by extending an edge of the electrolyte layer toward a surface of the substrate or extending an edge of the electrolyte layer beyond an edge of at least one of the first electrode and the second electrode along the surface thereof to substantially isolate the first electrode from the second electrode.

9. The method of manufacturing a computable integrated unit of claim 1, further comprising: forming a first drain electrode and a second drain electrode; the first drainage electrode is electrically connected with the first electrode, and the second drainage electrode is electrically connected with the second electrode.

10. The method of manufacturing a computable integrated unit of claim 1, further comprising: forming a first drain electrode and two second drain electrodes; the first current-guiding electrode is electrically connected with the first electrode, and the two second current-guiding electrodes are respectively arranged at two ends of the second electrode and are electrically connected with the second electrode so as to be used for detecting the resistance of the second electrode.

11. The method of manufacturing a computable integrated unit of claim 1, wherein a thickness ratio of the first electrode, the electrolyte layer and the second electrode is 1: (0.1-100): (0.01-100).

12. The method of claim 1, wherein at least one of the first electrode, the electrolyte layer, and the second electrode is patterned by a mask method and then formed by physical vapor deposition or additive manufacturing.

13. A computationally integrated unit, produced according to the method of any of claims 1-12.

14. A processor comprising the computable unified unit of claim 13.

15. An electronic device comprising the computable unified unit of claim 13.

16. An artificial nervous system comprising the computable unified unit of claim 13.