CN113342153B - Power supply and power-on reset circuit of RF transmitting chip - Google Patents
Power supply and power-on reset circuit of RF transmitting chip Download PDFInfo
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- CN113342153B CN113342153B CN202110625475.XA CN202110625475A CN113342153B CN 113342153 B CN113342153 B CN 113342153B CN 202110625475 A CN202110625475 A CN 202110625475A CN 113342153 B CN113342153 B CN 113342153B
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- transmitting chip
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 20
- 238000005070 sampling Methods 0.000 claims abstract description 5
- 239000003990 capacitor Substances 0.000 claims description 31
- 238000004146 energy storage Methods 0.000 claims description 13
- 230000009977 dual effect Effects 0.000 claims description 3
- 239000003086 colorant Substances 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
- G06F1/26—Power supply means, e.g. regulation thereof
- G06F1/30—Means for acting in the event of power-supply failure or interruption, e.g. power-supply fluctuations
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
- G06F1/24—Resetting means
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J9/00—Circuit arrangements for emergency or stand-by power supply, e.g. for emergency lighting
- H02J9/04—Circuit arrangements for emergency or stand-by power supply, e.g. for emergency lighting in which the distribution system is disconnected from the normal source and connected to a standby source
- H02J9/06—Circuit arrangements for emergency or stand-by power supply, e.g. for emergency lighting in which the distribution system is disconnected from the normal source and connected to a standby source with automatic change-over, e.g. UPS systems
- H02J9/068—Electronic means for switching from one power supply to another power supply, e.g. to avoid parallel connection
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/30—Systems integrating technologies related to power network operation and communication or information technologies for improving the carbon footprint of the management of residential or tertiary loads, i.e. smart grids as climate change mitigation technology in the buildings sector, including also the last stages of power distribution and the control, monitoring or operating management systems at local level
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y04—INFORMATION OR COMMUNICATION TECHNOLOGIES HAVING AN IMPACT ON OTHER TECHNOLOGY AREAS
- Y04S—SYSTEMS INTEGRATING TECHNOLOGIES RELATED TO POWER NETWORK OPERATION, COMMUNICATION OR INFORMATION TECHNOLOGIES FOR IMPROVING THE ELECTRICAL POWER GENERATION, TRANSMISSION, DISTRIBUTION, MANAGEMENT OR USAGE, i.e. SMART GRIDS
- Y04S20/00—Management or operation of end-user stationary applications or the last stages of power distribution; Controlling, monitoring or operating thereof
- Y04S20/20—End-user application control systems
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- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Business, Economics & Management (AREA)
- Emergency Management (AREA)
- Power Engineering (AREA)
- Electronic Switches (AREA)
Abstract
The invention provides a power supply and a power-on reset circuit of an RF transmitting chip, which is characterized by comprising a main power supply interface, wherein the main power supply interface supplies power to the RF transmitting chip through a first voltage conversion chip; after the main power supply fails, the standby power supply unit supplies power to the RF transmitting chip through the voltage conversion chip II; the I/O port of the RF transmitting chip is connected with the voltage sampling interface, and the reset port is connected with the reset circuit unit. In the technical scheme disclosed by the invention, when the main power supply fails, the standby power supply unit continues to supply power to the RF transmitting chip. And when the main power supply is recovered, the reset circuit unit is utilized to reset the RF transmitting chip again, so that the RF transmitting chip can work stably for a long time. Furthermore, in the technical scheme disclosed by the invention, whether the main power supply fails or not is monitored by utilizing the RF transmitting chip, an additional alarm circuit is not needed, and the hardware cost of the circuit is saved.
Description
Technical Field
The invention relates to a power supply and power-on reset circuit for an RF transmitting chip.
Background
In most of the existing power supply circuits, only when the main power supply circuit fails, the auxiliary power supply is realized by using elements such as a capacitor. For example: the Chinese patent with bulletin number CN211166739U and bulletin day 2020, 8 and 4 discloses a power supply circuit and a power supply device applying the power supply circuit, wherein the power supply circuit comprises a main power supply and an auxiliary power supply which are respectively connected with a load, and the auxiliary power supply comprises a control unit, a current acquisition unit, a super capacitor unit, a first power supply unit and a second power supply unit; the super capacitor unit, the first power supply unit and the second power supply unit are respectively connected with the control unit; the current acquisition unit is respectively connected with the control unit and the load; the super capacitor unit, the first power supply unit and the second power supply unit are respectively connected with the main power supply.
In the above power supply circuit, if the main power supply fails, the auxiliary power supply maintains the power supply. But for a circuit chip such as an RF transmitting chip, it is necessary not only to ensure that it is continuously powered, but also to restart the RF transmitting chip after the main power is restored to ensure that it is operating normally for a long period of time. However, most of the conventional power supply circuits do not have the above functions. And when the failure alarm of the main power supply is realized by the existing power supply circuit, the current power supply circuit is realized by adopting an additional alarm circuit or chip, so that the circuit cost is increased.
Disclosure of Invention
The invention aims to provide a circuit which can ensure that the main power supply loop can supply power to the RF transmitting chip even after failure and can restart the RF transmitting chip after the main power supply loop is recovered to be normal.
In order to achieve the above purpose, the power supply and power-on reset circuit of the RF transmitting chip of the present invention is characterized by comprising a main power supply interface, wherein the main power supply interface is respectively connected with a delay unit, an anode of a diode D91, a gate of a MOS transistor Q18, a drain of a double PMOS transistor Q17 and an input end of a voltage conversion chip one;
The cathode of the diode D91 is connected with two grid electrodes of the double PMOS tube Q15; two sources of the double PMOS tube Q15 are short-circuited; one drain electrode of the double-PMOS tube Q15 is connected with the power supply interface of the RF transmitting chip, and the other drain electrode of the double-PMOS tube Q15 is connected with the output end of the second voltage conversion chip; the input end of the second voltage conversion chip is connected with a standby power supply unit, and the standby power supply circuit is connected with one end of a resistor R251; the other end of the resistor R251 is respectively connected with the drain electrode of the MOS tube Q18, two grid electrodes of the double-PMOS tube Q17 and two grid electrodes of the double-PMOS tube Q3;
The source electrode of the MOS tube Q18 is grounded, and a resistor R252 is connected between the source electrode and the grid electrode of the MOS tube Q18 in a bridging mode;
two sources of the double-PMOS tube Q17 are short-circuited, the other drain electrode of the double-PMOS tube Q17 is connected with the anode of the diode D92, and the cathode of the diode D92 is connected with the standby power supply unit;
the output end of the first voltage conversion chip is respectively connected with a voltage sampling interface and one drain electrode of the double-PMOS tube Q3, two source electrodes of the double-PMOS tube Q3 are in short circuit, and the drain electrode of the other end of the double-PMOS tube Q3 is connected with the power supply interface of the RF transmitting chip;
the power supply interface of the RF transmitting chip is connected with the power supply input end of the RF transmitting chip;
an I/O port of the RF transmitting chip is connected with the voltage sampling interface;
the reset port of the RF transmitting chip is connected with the reset circuit unit.
Preferably, the delay unit includes a resistor R254 and a capacitor C310 connected in series, where the resistor R254 is connected to the main power supply interface, and one end of the capacitor C310 is connected to the resistor R254 and two gates of the dual PMOS transistor Q15 at the same time.
Preferably, the standby power supply unit adopts a resistor-capacitor circuit.
Preferably, the resistor-capacitor circuit is composed of a resistor R247 and an energy storage capacitor CN19, one end of the resistor R247 is connected with the cathode of the diode D92, and the other end of the resistor R247 is connected with the energy storage capacitor CN19; the energy storage capacitor CN19 is further connected to the input end of the second voltage conversion chip and one end of the resistor R251.
Preferably, the system further comprises a state indicating circuit unit, wherein the state indicating circuit unit is connected with the power supply interface of the RF transmitting chip.
Preferably, the state indicating circuit unit comprises two paths of state indicating circuits, the two paths of state indicating circuits respectively comprise two light emitting diodes which emit light with different colors, anodes of the two light emitting diodes are respectively connected with the power supply interface of the RF transmitting chip, and cathodes of the two light emitting diodes are respectively connected with different I/O ports of the RF transmitting chip.
Preferably, the reset circuit unit includes a MOS transistor Q19, a drain electrode of the MOS transistor Q19 is connected to a reset port of the RF emission chip, a source electrode of the MOS transistor Q19 is grounded, a gate electrode of the MOS transistor Q19 is connected to one end of a resistor R256 and a drain electrode of the MOS transistor Q20, the other end of the resistor R256 is connected to the main power supply interface, the main power supply interface is further connected to a cathode of a diode D93 and one end of a resistor R255, an anode of the diode D93 and the other end of the resistor R255 are connected to a gate electrode of the MOS transistor Q20, a source electrode of the MOS transistor Q20 is grounded, and a capacitor C311 is connected between the gate electrode and the source electrode of the MOS transistor Q20.
In the technical scheme disclosed by the invention, when the main power supply fails, the standby power supply unit continues to supply power to the RF transmitting chip. And when the main power supply is recovered, the reset circuit unit is utilized to reset the RF transmitting chip again, so that the RF transmitting chip can work stably for a long time. Furthermore, in the technical scheme disclosed by the invention, whether the main power supply fails or not is monitored by utilizing the RF transmitting chip, an additional alarm circuit is not needed, and the hardware cost of the circuit is saved.
Drawings
FIG. 1 is a schematic circuit diagram of a main power supply circuit and a standby energy storage power supply circuit in a power supply circuit according to an embodiment of the disclosure;
Fig. 2 is a schematic circuit diagram of a main power supply detection and re-power-on automatic reset circuit in a power supply circuit according to an embodiment of the disclosure.
Detailed Description
The application will be further illustrated with reference to specific examples. It is to be understood that these examples are illustrative of the present application and are not intended to limit the scope of the present application. Furthermore, it should be understood that various changes and modifications can be made by one skilled in the art after reading the teachings of the present application, and such equivalents are intended to fall within the scope of the application as defined in the appended claims.
The power supply and the power-on reset circuit of the RF transmitting chip are shown in fig. 1 and 2, wherein: vdd_5v represents the main power supply interface; vdd_rf represents the RF transmit chip power interface; q17, Q3 and Q15 are all double PMOS tubes; u18 and U56 are voltage conversion chips for converting 5V voltage into 3.3V voltage; CN19 is an energy storage capacitor; u49 is RF transmitting chip, and RF transmitting chip receives/sends wireless data under MCU control.
When the main power supply works normally, the power supply interface VDD_5V provides 5V voltage. The voltage conversion chip U18 works normally to convert 5V voltage into +3.3V voltage and output the +3.3V voltage to the double PMOS tube Q3. Meanwhile, the +3.3v voltage outputted from the voltage conversion chip U18 is directly inputted to one I/O of the RF transmission chip U49, whereby the RF transmission chip U49 can detect whether the voltage conversion chip U18 is operating normally.
Because the grid electrode of the MOS tube Q18 is connected with the power supply interface VDD_5V of the main power supply, the MOS tube Q18 is in a conducting state when the main power supply works normally, and the drain electrode and the source electrode of the MOS tube Q18 are conducted to be in a grounding state, so that the grid electrodes of the double-PMOS tube Q17 and the double-PMOS tube Q3 of the subsequent circuit are pulled to be in low level, and the double-PMOS tube Q17 and the double-PMOS tube Q3 are in a conducting state.
The conduction of the double PMOS tube Q17 enables the 5V voltage supplied by the main power supply to charge a resistor-capacitor circuit consisting of a resistor R247 and an energy storage capacitor CN19 through a diode D92, and the energy storage capacitor CN19 is used as a standby power supply. Since the 5V voltage supplied by the main power supply is supplied to the double PMOS transistor Q15 through the diode D91, the gate of the double PMOS transistor Q15 is pulled to a high level, and the double PMOS transistor Q15 is in an off state, so that the resistor-capacitor circuit is ensured to be in a charged state, and the output cannot be provided. Because the double-PMOS tube Q3 is in a conducting state, the +3.3V voltage output by the voltage conversion chip U18 supplies power to the power supply interface VDD_RF of the RF transmitting chip through the double-PMOS tube Q3.
When the power supply interface vdd_rf of the RF transmitting chip is energized, the light emitting diode D80 is turned on to emit red light, and at the same time, the light emitting diode D81 is turned on to emit green light.
When the main power supply has a problem, the 5V voltage on the power supply interface VDD_5V of the main power supply disappears and is in a low level state. At this time, the MOS transistor Q18 is turned off, and the energy storage capacitor CN19 starts to supply power. And then the gates of the double-PMOS tube Q17 and the double-PMOS tube Q3 are pulled high through the resistor R251, so that the double-PMOS tube Q17 and the double-PMOS tube Q3 are in a closed state. Meanwhile, the capacitor C310 and the resistor R254 form a small delay circuit, and after the capacitor C310 discharges for a small period of time, the grid electrode of the double-PMOS tube Q15 is pulled to be low level, so that the double-PMOS tube Q15 is conducted. At this time, the energy storage capacitor CN19 may provide +3.3v voltage for the power supply interface vdd_rf of the RF transmitting chip by using the voltage conversion chip U56 and the dual PMOS transistor Q15.
The RF transmitting chip U49 detects the disappearance of the 3.3V voltage signal output by the voltage conversion chip through the I/O port thereof, and transmits a wireless signal after the power-on is completed through the energy storage capacitor CN19, and the power-off fault is reported, thus completing the whole power-off reporting process.
When the main power supply is powered on again, the power supply interface VDD_5V of the main power supply provides 5V again, the grid electrode of the double-PMOS tube Q15 is pulled up again, the double-PMOS tube Q15 is in an off state, and the double-PMOS tube Q3 and the double-PMOS tube Q17 are turned on again. At this time, the RF transmitting chip power supply interface is provided by the voltage conversion chip U18 that operates normally. Meanwhile, as the main power supply interface vdd_5v is powered on again, the MOS transistor Q19 is turned on because the gate thereof is in a state of a pull-up high level, and the reset port of the RF transmitting chip U49 is set low, thereby performing a restart state. Along with the completion of charging the capacitor C311, the MOS transistor Q20 is turned on, so that the gate of the MOS transistor Q19 is pulled down again, and the MOS transistor Q19 is turned off. At this time, the RF transmitting chip U49 is restarted, and enters the normal operation mode.
Claims (7)
1. The power supply and power-on reset circuit of the RF transmitting chip is characterized by comprising a main power supply interface (VDD_5V), wherein the main power supply interface (VDD_5V) is respectively connected with a delay unit, an anode of a diode D91, a grid electrode of a MOS tube Q18, a drain electrode of a double PMOS tube Q17 and an input end of a voltage conversion chip I (U18);
The cathode of the diode D91 is connected with two grid electrodes of the double PMOS tube Q15; two sources of the double PMOS tube Q15 are short-circuited; one drain electrode of the double-PMOS tube Q15 is connected with an RF transmitting chip power supply interface (VDD_RF), and the other drain electrode of the double-PMOS tube Q15 is connected with the output end of a voltage conversion chip II (U56); the input end of the second voltage conversion chip (U56) is connected with a standby power supply unit, and the standby power supply circuit is connected with one end of a resistor R251; the other end of the resistor R251 is respectively connected with the drain electrode of the MOS tube Q18, two grid electrodes of the double-PMOS tube Q17 and two grid electrodes of the double-PMOS tube Q3;
The source electrode of the MOS tube Q18 is grounded, and a resistor R252 is connected between the source electrode and the grid electrode of the MOS tube Q18 in a bridging mode;
two sources of the double-PMOS tube Q17 are short-circuited, the other drain electrode of the double-PMOS tube Q17 is connected with the anode of the diode D92, and the cathode of the diode D92 is connected with the standby power supply unit;
the output end of the first voltage conversion chip (U18) is respectively connected with a voltage sampling interface and one drain electrode of the double-PMOS tube Q3, two source electrodes of the double-PMOS tube Q3 are in short circuit, and the drain electrode of the other end of the double-PMOS tube Q3 is connected with an RF transmitting chip power supply interface (VDD_RF);
the power supply interface (VDD_RF) of the RF transmitting chip is connected with the power supply input end of the RF transmitting chip;
an I/O port of the RF transmitting chip is connected with the voltage sampling interface;
the reset port of the RF transmitting chip is connected with the reset circuit unit.
2. The power supply and power-on reset circuit of claim 1, wherein the delay unit comprises a resistor R254 and a capacitor C310 connected in series, the resistor R254 is connected to the main power supply interface (vdd_5v), and one end of the capacitor C310 is connected to the resistor R254 and two gates of the dual PMOS transistor Q15.
3. The power supply and power-on reset circuit of an RF transmit chip of claim 1, wherein said standby power supply unit employs a resistor-capacitor circuit.
4. The power supply and power-on reset circuit of an RF transmitting chip as claimed in claim 3, wherein said resistor-capacitor circuit is composed of a resistor R247 and an energy storage capacitor CN19, one end of the resistor R247 is connected to the cathode of said diode D92, and the other end is connected to the energy storage capacitor CN19; the energy storage capacitor CN19 is further connected to the input end of the second voltage conversion chip (U56) and one end of the resistor R251.
5. The power supply and power-on reset circuit of an RF transmit chip of claim 1, further comprising a status indication circuit unit coupled to said RF transmit chip power interface (vdd_rf).
6. The power supply and power-on reset circuit of claim 5, wherein said status indication circuit unit comprises two status indication circuits, each of which comprises two light emitting diodes emitting light of different colors, anodes of the two light emitting diodes being connected to said power supply interface (vdd_rf) of said RF transmitting chip, cathodes of the two light emitting diodes being connected to different I/O ports of said RF transmitting chip, respectively.
7. The power supply and power-on reset circuit of an RF transmitting chip as claimed in claim 1, wherein the reset circuit unit comprises a MOS transistor Q19, a drain electrode of the MOS transistor Q19 is connected to the reset port of the RF transmitting chip, a source electrode is grounded, a gate electrode is respectively connected to one end of a resistor R256 and a drain electrode of the MOS transistor Q20, the other end of the resistor R256 is connected to the main power supply interface (vdd_5v), the main power supply interface (vdd_5v) is further connected to a cathode of a diode D93, one end of a resistor R255, an anode of the diode D93 and the other end of the resistor R255 are connected to a gate electrode of the MOS transistor Q20, a source electrode of the MOS transistor Q20 is grounded, and a capacitor C311 is connected between the gate electrode and the source electrode of the MOS transistor Q20.
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CN202110625475.XA CN113342153B (en) | 2021-06-04 | 2021-06-04 | Power supply and power-on reset circuit of RF transmitting chip |
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CN202110625475.XA CN113342153B (en) | 2021-06-04 | 2021-06-04 | Power supply and power-on reset circuit of RF transmitting chip |
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CN113342153B true CN113342153B (en) | 2024-06-04 |
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Citations (6)
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CN103699200A (en) * | 2013-12-31 | 2014-04-02 | 青岛歌尔声学科技有限公司 | Power-off control circuit and electronic product |
CN103716023A (en) * | 2013-12-03 | 2014-04-09 | 北京中电华大电子设计有限责任公司 | Power-on reset circuit with ultra-low power consumption |
CN106054087A (en) * | 2016-07-15 | 2016-10-26 | 上海璜域光电科技有限公司 | Power supply detection circuit used for passive radio frequency tag |
WO2017076302A1 (en) * | 2015-11-03 | 2017-05-11 | 上海易码信息科技有限公司 | Mobile payment device |
EP3493654A1 (en) * | 2017-12-01 | 2019-06-05 | Self Electronics Co., Ltd. | Dali interface circuit with bootstrap function |
CN216014202U (en) * | 2021-06-04 | 2022-03-11 | 上海助院科技有限公司 | Power supply and power-on reset circuit of RF transmitting chip |
-
2021
- 2021-06-04 CN CN202110625475.XA patent/CN113342153B/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103716023A (en) * | 2013-12-03 | 2014-04-09 | 北京中电华大电子设计有限责任公司 | Power-on reset circuit with ultra-low power consumption |
CN103699200A (en) * | 2013-12-31 | 2014-04-02 | 青岛歌尔声学科技有限公司 | Power-off control circuit and electronic product |
WO2017076302A1 (en) * | 2015-11-03 | 2017-05-11 | 上海易码信息科技有限公司 | Mobile payment device |
CN106054087A (en) * | 2016-07-15 | 2016-10-26 | 上海璜域光电科技有限公司 | Power supply detection circuit used for passive radio frequency tag |
EP3493654A1 (en) * | 2017-12-01 | 2019-06-05 | Self Electronics Co., Ltd. | Dali interface circuit with bootstrap function |
CN216014202U (en) * | 2021-06-04 | 2022-03-11 | 上海助院科技有限公司 | Power supply and power-on reset circuit of RF transmitting chip |
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