CN113311048A - Nano-fluidic field effect transistor and preparation method and application thereof - Google Patents
Nano-fluidic field effect transistor and preparation method and application thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 238000002353 field-effect transistor method Methods 0.000 title description 2
- 239000012528 membrane Substances 0.000 claims abstract description 180
- 230000005669 field effect Effects 0.000 claims abstract description 86
- 239000011148 porous material Substances 0.000 claims abstract description 31
- 238000001514 detection method Methods 0.000 claims abstract description 20
- 238000013528 artificial neural network Methods 0.000 claims abstract description 8
- 229920000557 Nafion® Polymers 0.000 claims description 42
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- 238000000034 method Methods 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- NQTADLQHYWFPDB-UHFFFAOYSA-N N-Hydroxysuccinimide Chemical compound ON1C(=O)CCC1=O NQTADLQHYWFPDB-UHFFFAOYSA-N 0.000 claims description 5
- 229910021607 Silver chloride Inorganic materials 0.000 claims description 5
- 239000000853 adhesive Substances 0.000 claims description 5
- 230000001070 adhesive effect Effects 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 claims description 5
- VSZWLDAGOXQHNB-UHFFFAOYSA-M 2-aminoethyl(trimethyl)azanium;chloride Chemical compound [Cl-].C[N+](C)(C)CCN VSZWLDAGOXQHNB-UHFFFAOYSA-M 0.000 claims description 3
- 239000011259 mixed solution Substances 0.000 claims description 3
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 claims description 3
- BESDVFONHKTWNI-UHFFFAOYSA-N 3-(ethyliminomethylideneamino)-n-methylpropan-1-amine;hydrochloride Chemical compound Cl.CCN=C=NCCCNC BESDVFONHKTWNI-UHFFFAOYSA-N 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 230000003321 amplification Effects 0.000 abstract description 26
- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 26
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- 229920000139 polyethylene terephthalate Polymers 0.000 description 69
- 150000002500 ions Chemical class 0.000 description 12
- LMDZBCPBFSXMTL-UHFFFAOYSA-N 1-Ethyl-3-(3-dimethylaminopropyl)carbodiimide Substances CCN=C=NCCCN(C)C LMDZBCPBFSXMTL-UHFFFAOYSA-N 0.000 description 4
- 229920002799 BoPET Polymers 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229920000867 polyelectrolyte Polymers 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- FPQQSJJWHUJYPU-UHFFFAOYSA-N 3-(dimethylamino)propyliminomethylidene-ethylazanium;chloride Chemical compound Cl.CCN=C=NCCCN(C)C FPQQSJJWHUJYPU-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000005576 amination reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
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- 238000002715 modification method Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
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- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
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Abstract
The invention provides a nano-fluidic field effect transistor and a preparation method and application thereof, relating to the technical field of nano-fluidic and electrochemistry and comprising the following steps: the nano-porous membrane comprises a first nano-porous membrane with positive charges on the inner surface of a nano-pore, a second nano-porous membrane with negative charges on the inner surface of the nano-pore and electrodes; and respectively combining two surfaces of the second nano porous membrane with the first nano porous membrane, or respectively combining two surfaces of the first nano porous membrane with the second nano porous membrane to construct the nano-fluidic field effect tube with an NPN or PNP structure. The invention utilizes the ion selective transmission characteristic of the nano-channel and combines gate potential control to change the surface charge density of partial nano-channel to realize signal amplification under the condition of low gate potential, solves the problem that the existing field effect tube cannot realize detection under high ion intensity, successfully realizes Sigmoid response of the ion current signal of the nano-channel, and can be used as a controllable unit component for subsequent logic control and a switch component of an artificial neural network.
Description
Technical Field
The invention relates to the technical field of nano-fluidic and electrochemistry, in particular to a nano-fluidic field effect transistor and a preparation method and application thereof.
Background
The existing field-effect tube analysis devices are all constructed based on solid-state semiconductors, and the current amplification effect of the field-effect tube is utilized to amplify the signal of a substance in analysis and detection so as to realize the detection of the low-concentration substance. With the development of two-dimensional nano materials, the miniaturization problem of the field effect transistor is solved, and the field effect transistor is gradually applied to a wearable detection device.
However, the signal-to-noise ratio of the fet is inversely proportional to its dynamic response range, that is, when the dynamic detection range of the fet is increased, the signal-to-noise ratio of the detection signal is decreased. Therefore, to ensure the signal-to-noise ratio of the fet, it is generally necessary to define the dynamic response range of the fet. Moreover, in order to obtain a sufficient response signal, the problem of the size of the electric double layer of the field effect transistor must be considered, that is, when the size of the detection substance is equivalent to the size of the field effect transistor, the field effect transistor can obtain a sufficient response signal, this further limits the field effect transistor's application to detection at high ionic strength, particularly in the detection of biological samples, because the high ionic strength causes the thickness of the double electric layers of the field effect tube to be reduced to about 1 nanometer, the detection signal of the field effect tube is weakened, thereby causing the detection precision to be reduced, the common solution is to modify the field effect transistor by adopting polyelectrolyte to improve the response characteristic of the field effect transistor under high ionic strength, however, polyelectrolyte modification causes another problem, namely the problem of current amplification efficiency, and the field effect transistor after polyelectrolyte modification needs to be under a higher gate potential (>20V) to obtain higher current amplification efficiency. Such high gate potentials are not useful for biomolecule detection, particularly protein detection.
In view of the above, the present invention is particularly proposed.
Disclosure of Invention
One of the objectives of the present invention is to provide a nanofluidic field effect transistor, which utilizes the ion selective transport property of the nanochannel and combines gate potential control to change the surface charge density of part of the nanochannel to achieve signal amplification under the condition of low gate potential.
The second objective of the present invention is to provide a method for manufacturing a nanofluidic field-effect transistor.
The invention also aims to provide an application of the nano-fluidic field effect transistor or the prepared artificial neural network switching device in biomolecule detection.
In order to achieve the above purpose of the present invention, the following technical solutions are adopted:
in a first aspect, the present invention provides a nanofluidic field-effect transistor, comprising: a first nanoporous membrane, a second nanoporous membrane, and an electrode; the inner surfaces of the nanopores in the first nanoporous membrane have positive charges, and the inner surfaces of the nanopores in the second nanoporous membrane have negative charges; the electrodes comprise a gate electrode and a drive electrode;
the two surfaces of the second nano porous membrane are respectively combined with the first nano porous membrane, and the second nano porous membrane is provided with the gate electrode; or, the two surfaces of the first nano porous film are respectively combined with the second nano porous film, the gate electrode is arranged on the first nano porous film, and the nano-fluidic field effect transistor with an NPN or PNP structure is constructed.
Further, the first nanoporous film is a modified PET nanoporous film, a modified PC nanoporous film, or a polyaniline film, and is preferably a PET nanoporous film.
Further, the second nano porous membrane is a Nafion membrane or an unmodified PET nano porous membrane.
Further, the size of the nanometer pore channel in the first nanometer porous membrane is 20-50 nm; the thickness of the first nano porous membrane is 10-50 μm;
the size of the nanometer pore channel in the second nanometer porous membrane is 20-50 nm; the thickness of the second nano porous membrane is 10-50 μm.
Further, a conducting silver adhesive is adopted to lead out the conducting wire from the second nano porous membrane to form a gate electrode; or, leading out the conducting wire from the first nano porous membrane by adopting conductive silver adhesive to form a gate electrode;
the driving electrode adopts an Ag/AgCl electrode.
Further, the nanopores in the first nanoporous membrane are tapered.
In a second aspect, the present invention provides a method for preparing a nanofluidic field effect transistor, comprising the following steps:
(a) providing a PET nano porous membrane, and then modifying the PET nano porous membrane to enable the inner surface of a nano pore channel of the PET nano porous membrane to have positive charges, or providing a polyaniline membrane;
(b) coating a layer of Nafion film or superposing a layer of unmodified PET nano porous film on the surface of the PET nano porous film or polyaniline film with positive charges on the inner surface of the nano pore channel obtained in the step (a), combining the Nafion film or the polyaniline film with positive charges on the inner surface of the nano pore channel obtained in the other step (a), and applying a gate electrode on the Nafion film or the unmodified PET nano porous film to obtain the nano-fluidic field effect tube with the NPN structure.
The invention also provides a preparation method of the nano-fluidic field effect transistor, which comprises the following steps:
(a) providing a PET nano porous membrane, and then modifying the PET nano porous membrane to enable the inner surface of a nano pore channel of the PET nano porous membrane to have positive charges, or providing a polyaniline membrane;
(b) providing an unmodified PET nanoporous membrane or Nafion membrane; and (b) superposing a layer of PET nano porous membrane with positive charges on the inner surface of the nano pore channel obtained in the step (a) on the surface of an unmodified PET nano porous membrane or a Nafion membrane or coating a layer of polyaniline membrane on the surface of the unmodified PET nano porous membrane or the Nafion membrane, combining the PET nano porous membrane with positive charges on the inner surface of the nano pore channel or the Nafion membrane, and applying a gate electrode on the PET nano porous membrane with positive charges or the polyaniline membrane to obtain the nano-fluidic field effect tube with the PNP structure.
Further, in the step (a), the method for modifying in the first nanoporous membrane comprises:
firstly, a first nano porous membrane to be modified is immersed in a mixed solution of EDC (1-ethyl- (3-dimethylaminopropyl) carbodiimide hydrochloride) and NHS (N-hydroxysuccinimide sulfonate) for 30-60 minutes; then the nanoporous membrane is cleaned and placed in a (2-aminoethyl) trimethylammonium chloride solution for more than 12 hours.
In a third aspect, the invention provides an application of the nano-fluidic field-effect tube in biomolecule detection or preparation of an artificial neural network switching device.
The nano-fluidic field effect transistor and the preparation method and the application thereof provided by the invention at least have the following beneficial effects:
1. the invention utilizes the ion selective transmission characteristic of the nano channel (nano pore channel) and combines gate potential control to change the surface charge density of partial nano channel to realize signal amplification under the condition of low gate potential.
2. The invention can realize 1000 times of current amplification efficiency (10mM) under lower gate potential (<2V), and can realize 830 times of current amplification under high ionic strength (100mM), thereby solving the problem that the existing field effect tube can not realize detection under high ionic strength.
3. By controlling the gate potential, sigmoid response of the nano-channel ion current signal is successfully realized, so that the nano-channel ion current signal can be used as a controllable unit component for subsequent logic control and a switch component of an artificial neural network.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a schematic longitudinal cross-sectional view of a nano-fluidic field-effect transistor according to an embodiment of the present invention;
FIG. 2 is a diagram of a detecting device of a nano-fluidic field-effect transistor according to an embodiment of the present invention;
fig. 3 is a schematic view of a current amplification system of a nano-fluidic fet according to an embodiment of the present invention, where a is a schematic view of a current amplification system of a nano-fluidic fet with a PNP structure, and b is a schematic view of a current amplification system of a nano-fluidic fet with an NPN structure;
fig. 4 shows different types of response signals of the nano-fluidic field effect transistor, wherein a is a response signal of the ionic current of the PNP-structured nano-fluidic field effect transistor at different gate control potentials, and b is a response signal of the ionic current of the NPN-structured nano-fluidic field effect transistor at different gate control potentials;
fig. 5 is a graph showing the change of ion current and current amplification efficiency at different gate potentials of the nanofluidic field-effect transistor, wherein a is the relationship between the gate control current and the driving current of the PNP-structured nanofluidic field-effect transistor at a concentration of 10mM KCl, b is the relationship between the current amplification efficiency and the gate control current of the PNP-structured nanofluidic field-effect transistor at a concentration of 10mM KCl, c is the relationship between the current amplification efficiency and the gate control current of the PNP-structured nanofluidic field-effect transistor at a concentration of 100mM KCl, d is the relationship between the gate control current and the driving current of the NPN-structured nanofluidic field-effect transistor at a concentration of 10mM KCl, e is the relationship between the current amplification efficiency and the gate control current of the NPN-structured nanofluidic field-effect transistor at a concentration of 10mM KCl, and f is the relationship between the current amplification efficiency and the gate control current of the NPN-structured nanofluidic field-effect transistor at a concentration of 100mM KCl;
fig. 6 is a relationship between an ion current response curve of the NPN nanofluidic field-effect transistor and a gate potential change, where a is a Sigmoid response signal of the NPN nanofluidic field-effect transistor, b is a rectification response signal of the NPN nanofluidic field-effect transistor, and c is a linear response signal of the NPN nanofluidic field-effect transistor.
Icon: 1-PET nano porous membrane; 2-nanometer pore canal of PET nanometer porous membrane; 3-Nafion membrane; 4-nanopores of a Nafion membrane; 5-gate electrode.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the following embodiments, and it should be understood that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention. The materials in the examples are prepared according to known methods or are directly commercially available, unless otherwise specified.
At present, a field effect transistor device based on nanofluid does not exist, and in order to solve the problem that the existing field effect transistor cannot realize detection under high ionic strength, the invention constructs a field effect transistor based on a nanochannel, which comprises the following components: a first nanoporous membrane, a second nanoporous membrane, and an electrode; the inner surface of a nano-pore in the first nano-porous membrane is provided with positive charges, and the inner surface of a nano-pore in the second nano-porous membrane is provided with negative charges; the electrodes comprise a gate electrode and a driving electrode; the two surfaces of the second nano porous membrane are respectively combined with the first nano porous membrane, and the second nano porous membrane is provided with a gate electrode; or, the two surfaces of the first nano porous membrane are respectively combined with the second nano porous membrane, and the gate electrode is arranged on the first nano porous membrane to construct the nano-fluidic field effect transistor with an NPN or PNP structure.
The first nano porous membrane can be selected from a polyaniline membrane, a modified PET nano porous membrane or a modified PC nano porous membrane.
The PET film is a porous film consisting of a plurality of nano-channels and is prepared by the following steps: firstly, injecting sodium hydroxide and oxalic acid solution into two sides of an ion track membrane respectively, applying 1 volt voltage to the two sides of the membrane, controlling the size of a nano channel in the membrane to be about 20 to 50nm by controlling current, and modifying positively charged molecules inside a PET membrane to enable the PET membrane to be positively charged.
Positively charged molecules include, but are not limited to, channel surface amination modifications, a typical modification method is as follows:
firstly, soaking a PET membrane to be modified in a mixed solution of EDC (1-ethyl- (3-dimethylaminopropyl) carbodiimide hydrochloride) and NHS (N-hydroxysuccinimide sulfonate) for 30-60 minutes; then the nanoporous membrane is cleaned and placed in a (2-aminoethyl) trimethylammonium chloride solution for more than 12 hours.
The polyaniline film is a positively charged porous film and does not require treatment.
In a preferred embodiment, the size of the nanopores in the first nanoporous membrane is from 20 to 50 nm; the first nanoporous membrane has a thickness of 10 to 50 μm (e.g., 12 μm).
The second nanoporous membrane can be selected from a Nafion membrane or an unmodified PET nanoporous membrane.
The Nafion membrane is a negatively charged porous membrane with nanochannel dimensions on the order of tens of nanometers. Conventional Nafion does not require treatment.
The unmodified PET film is a negatively charged porous film.
In a preferred embodiment, the size of the nanopores in the second nanoporous membrane is from 20 to 50 nm; the thickness of the second nanoporous film was 10 μm.
The nano-fluidic field effect transistor with the NPN structure can be any one of the following combination forms:
modified PET membrane (+) -Nafion membrane (-) -modified PET membrane (+); the middle is Nafion film, the two sides are modified PET film, and the brackets show electrification property in the same way.
Polyaniline membrane (+) -Nafion membrane (-) -polyaniline membrane (+);
modified PET membrane (+) -unmodified PET membrane (-) -modified PET membrane (+);
the polyaniline film (+) -unmodified PET film (-) -polyaniline film (+).
The nano-fluidic field effect transistor with the PNP structure can be any one of the following combination forms:
unmodified PET membrane (-) -polyaniline membrane (+) -unmodified membrane PET (-);
nafion membrane (-) -modified PET membrane (+) -Nafion membrane (-);
nafion membrane (-) -polyaniline membrane (+) -Nafion membrane (-);
unmodified PET membrane (-) -modified PET membrane (+) -unmodified membrane PET (-).
As a preferred embodiment, as shown in fig. 1 and fig. 2, the nanofluidic field effect transistor is composed of a PET nanoporous membrane 1, a Nafion membrane 3, electrodes, etc., wherein the dimension of the nanopores 2 of the PET nanoporous membrane is 20-50nm, the nanopores 2 of the PET nanoporous membrane are tapered, and the PET nanoporous membrane is modified to have positive charges on the inner surface of the nanopores 2; the size of the nano-pore 4 of the Nafion membrane is 20-50nm, and the inner surface of the nano-pore 4 of the Nafion membrane has negative charges; and then combining the two PET nano porous membranes 1 with a Nafion membrane 3 respectively, wherein a gate electrode 5 is arranged on the Nafion membrane 3 (the nano porous membrane in the gate control area), and an Ag/AgCl electrode is adopted as a driving electrode, so that the nano-fluidic field effect tube with the NPN structure is obtained.
The current amplification system of the nano-current controlled field effect transistor with the NPN structure is shown as b in FIG. 3.
As another preferred embodiment, the nanofluidic field-effect transistor is composed of a PET nanoporous film, a polyaniline film, an electrode, and the like, wherein the dimension of the nanopores of the PET nanoporous film is 20-50nm, and the inner surfaces of the nanopores of the unmodified PET nanoporous film have negative charges; the inner surface of the polyaniline film is provided with positive charges; and combining the two PET nano porous films and the polyaniline film respectively to construct a sandwich structure, wherein a gate electrode is arranged on the polyaniline film, and an Ag/AgCl electrode is adopted as a driving electrode to obtain the nano-fluidic field effect transistor with the PNP structure. The current amplification system of the nano-current controlled field effect transistor with the PNP structure is schematically shown as a in FIG. 3.
According to a second aspect of the present invention, there is provided a method for manufacturing a nanofluidic field-effect transistor, comprising the steps of:
(a) providing a PET nano porous membrane, and then modifying the PET nano porous membrane to enable the inner surface of a nano pore channel of the PET nano porous membrane to have positive charges, or providing a polyaniline membrane;
(b) coating a layer of Nafion film or unmodified PET nano porous film on the surface of the PET nano porous film or polyaniline film with positive charges on the inner surface of the nano pore channel obtained in the step (a), combining the Nafion film or the unmodified PET nano porous film with positive charges on the inner surface of the nano pore channel obtained in the other step (a), and applying a gate electrode on the Nafion film or the unmodified PET nano porous film to obtain the nano-fluidic field effect tube with the NPN structure.
According to the second aspect of the present invention, there is also provided a method for manufacturing a nanofluidic field effect transistor, comprising the steps of:
(a) providing a PET nano porous membrane, and then modifying the PET nano porous membrane to enable the inner surface of a nano pore channel of the PET nano porous membrane to have positive charges, or providing a polyaniline membrane;
(b) providing an unmodified PET nanoporous membrane or Nafion membrane; and (b) superposing a layer of PET nano porous membrane with positive charges on the inner surface of the nano pore channel obtained in the step (a) on the surface of an unmodified PET nano porous membrane or a Nafion membrane or coating a layer of polyaniline membrane on the surface of the unmodified PET nano porous membrane or the Nafion membrane, combining the PET nano porous membrane with positive charges on the inner surface of the nano pore channel or the Nafion membrane, and applying a gate electrode on the PET nano porous membrane with positive charges or the polyaniline membrane to obtain the nano-fluidic field effect tube with the PNP structure.
As a preferred embodiment, a method for constructing a nanofluidic field effect transistor with an NPN structure includes:
controlling the size of a nanometer pore channel in the PET nanometer porous membrane to be 20-50nm, and then modifying the PET nanometer porous membrane to enable the PET nanometer porous membrane to be positively charged; and then coating a Nafion solution on the surface of the PET nano porous membrane, volatilizing to form a film, combining the film with another PET nano porous membrane with positive charges, leading out a lead from the Nafion membrane by adopting conductive silver adhesive, constructing a gate potential control device, and constructing the nano-fluidic field effect tube with the NPN structure through the steps.
As another preferred embodiment, a method for constructing a nano-fluidic field-effect transistor with a PNP structure includes:
controlling the size of a nanometer pore channel in the PET nanometer porous membrane to be 20-50nm, wherein the unmodified PET nanometer porous membrane has negative charges; and combining the two PET nano porous membranes with negative charges and the polyaniline membrane to construct a sandwich structure. And leading out a lead from the polyaniline film by adopting conductive silver adhesive, constructing a gate potential control device, and constructing the nano-fluidic field effect transistor with the PNP structure through the steps.
According to a third aspect of the present invention, there is provided an application of a nano-fluidic field effect transistor in biomolecule detection or in the preparation of an artificial neural network switching device.
The invention can be used for controlling the voltage of the gate at a lower voltage<2V) to realize a larger current amplification effect, wherein the amplification ratio is 1000 times (the ion concentration is 10 mM); current detection limit 10 x 10-15A; realizes the amplification efficiency of 830 times at high ionic strength (100mM) and is suitable for biomolecule detection.
The invention can realize the response of the ion current signal Sigmoid and can be used as a switching device of an artificial neural network.
Experimental example 1 current amplification effect of nano-current controlled field effect transistor
When the drive potential is ensured to change from-1V to 1V, the gate potential is changed to examine the change of the current under the drive potential, and different types of current response signals (linear response, rectification response and sigmoid response, see figure 4) are obtained.
And obtaining the ratio of the driving current signal under different gate potentials to the current signal in the gate potential to obtain the current amplification efficiency of the nano-current control field effect transistor.
In order to measure the current amplification effect of the nano-fluidic field-effect tube under different ion concentrations, the gate potential current and the ion driving current are observed under the ion concentrations of 10mM and 100mM and different gate potentials (-2V to 2V), the electrode adopted for measuring the driving current is a two-electrode system (Ag/AgCl electrode), the voltage range is 1V to-1V, the voltage variation amplitude is 10mV/s, the collected current signals and amplification efficiency under different gate voltages are shown in figure 5, and the result shows that the nano-fluidic field-effect tube can realize good current amplification efficiency under the low gate potential.
Experimental example 2 Sigmoid response Signal
The change of the sigmoid response curve under different gate potentials is considered (figure 6), and the test process is as follows:
the constructed nano-current controlled field effect transistor is placed in the experimental device shown in fig. 3, a double potentiostat is utilized to apply certain potentials to the gate control electrode and the driving electrode respectively, the gate control current and the driving current are observed and recorded, and the current magnitude of the driving current under different driving voltages under certain gate control potentials is obtained.
The result shows that the sigmoid response curve is gradually converted into a rectification curve along with the increase of the gate potential to-0.4V, which shows that the nano-flow control field effect transistor can realize controllable sigmoid response and provides technical conditions for the application of the nano-flow control field effect transistor in the artificial neural network.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. A nanofluidic field-effect transistor, comprising: a first nanoporous membrane, a second nanoporous membrane, and an electrode; the inner surfaces of the nanopores in the first nanoporous membrane have positive charges, and the inner surfaces of the nanopores in the second nanoporous membrane have negative charges; the electrodes comprise a gate electrode and a drive electrode;
the two surfaces of the second nano porous membrane are respectively combined with the first nano porous membrane, and the second nano porous membrane is provided with the gate electrode; or, the two surfaces of the first nano porous film are respectively combined with the second nano porous film, the gate electrode is arranged on the first nano porous film, and the nano-fluidic field effect transistor with an NPN or PNP structure is constructed.
2. The nanofluidic field-effect transistor of claim 1, wherein the first nanoporous film is a modified PET nanoporous film, a modified PC nanoporous film, or a polyaniline film.
3. The nanofluidic field-effect transistor of claim 2, wherein the second nanoporous membrane is a Nafion membrane or an unmodified PET nanoporous membrane.
4. The nanofluidic field-effect transistor of any of claims 1-3, wherein the size of the nanopores in the first nanoporous membrane is 20-50 nm; the thickness of the first nano porous membrane is 10-50 μm;
the size of the nanometer pore channel in the second nanometer porous membrane is 20-50 nm; the thickness of the second nano porous membrane is 10-50 μm.
5. The nanofluidic field-effect transistor of any of claims 1 to 3, wherein a conductive silver paste is used to lead the wires out of the second nanoporous film to form a gate electrode; or, leading out the conducting wire from the first nano porous membrane by adopting conductive silver adhesive to form a gate electrode;
the driving electrode adopts an Ag/AgCl electrode.
6. The nanofluidic field-effect transistor of any of claims 1-3, wherein the nanopores in the first nanoporous membrane are tapered.
7. A method for preparing a nanofluidic field-effect transistor according to any of claims 1 to 6, comprising the steps of:
(a) providing a PET nano porous membrane, and then modifying the PET nano porous membrane to enable the inner surface of a nano pore channel of the PET nano porous membrane to have positive charges, or providing a polyaniline membrane;
(b) coating a layer of Nafion film or superposing a layer of unmodified PET nano porous film on the surface of the PET nano porous film or polyaniline film with positive charges on the inner surface of the nano pore channel obtained in the step (a), combining the Nafion film or the polyaniline film with positive charges on the inner surface of the nano pore channel obtained in the other step (a), and applying a gate electrode on the Nafion film or the unmodified PET nano porous film to obtain the nano-fluidic field effect tube with the NPN structure.
8. A method for preparing a nanofluidic field-effect transistor according to any of claims 1 to 6, comprising the steps of:
(a) providing a PET nano porous membrane, and then modifying the PET nano porous membrane to enable the inner surface of a nano pore channel of the PET nano porous membrane to have positive charges, or providing a polyaniline membrane;
(b) providing an unmodified PET nanoporous membrane or Nafion membrane; and (b) superposing a layer of PET nano porous membrane with positive charges on the inner surface of the nano pore channel obtained in the step (a) on the surface of an unmodified PET nano porous membrane or a Nafion membrane or coating a layer of polyaniline membrane on the surface of the unmodified PET nano porous membrane or the Nafion membrane, combining the PET nano porous membrane with positive charges on the inner surface of the nano pore channel or the Nafion membrane, and applying a gate electrode on the PET nano porous membrane with positive charges or the polyaniline membrane to obtain the nano-fluidic field effect tube with the PNP structure.
9. The method for preparing nanofluidic field-effect transistor according to claim 7 or 8, wherein the step (a) of modifying in the first nanoporous membrane comprises:
firstly, a first nano porous membrane to be modified is soaked in a mixed solution of 1- (3-methylaminopropyl) -3-ethylcarbodiimide hydrochloride and N-hydroxysuccinimide sulfonate for 30-60 minutes; then, the mixture was washed and then placed in a (2-aminoethyl) trimethylammonium chloride solution for 12 hours or more.
10. Use of the nanofluidic field-effect transistor of any of claims 1-6 in biomolecule detection or in the preparation of artificial neural network switching devices.
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