CN113299838B - Method for stabilizing interface of perovskite thin film and hole transport layer - Google Patents
Method for stabilizing interface of perovskite thin film and hole transport layer Download PDFInfo
- Publication number
- CN113299838B CN113299838B CN202110402386.9A CN202110402386A CN113299838B CN 113299838 B CN113299838 B CN 113299838B CN 202110402386 A CN202110402386 A CN 202110402386A CN 113299838 B CN113299838 B CN 113299838B
- Authority
- CN
- China
- Prior art keywords
- transport layer
- hole transport
- precursor solution
- thin film
- pbi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005525 hole transport Effects 0.000 title claims abstract description 73
- 239000010409 thin film Substances 0.000 title claims abstract description 56
- 238000000034 method Methods 0.000 title claims abstract description 35
- 230000000087 stabilizing effect Effects 0.000 title claims abstract description 20
- 239000002243 precursor Substances 0.000 claims abstract description 100
- SWJPEBQEEAHIGZ-UHFFFAOYSA-N 1,4-dibromobenzene Chemical compound BrC1=CC=C(Br)C=C1 SWJPEBQEEAHIGZ-UHFFFAOYSA-N 0.000 claims abstract description 65
- 238000004528 spin coating Methods 0.000 claims abstract description 50
- 239000010408 film Substances 0.000 claims abstract description 29
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910001887 tin oxide Inorganic materials 0.000 claims abstract description 25
- 238000001035 drying Methods 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000004140 cleaning Methods 0.000 claims abstract description 5
- 238000010438 heat treatment Methods 0.000 claims abstract description 5
- 239000000243 solution Substances 0.000 claims description 93
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 28
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 23
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 claims description 21
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 14
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 14
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 claims description 14
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 claims description 14
- 239000000843 powder Substances 0.000 claims description 14
- 239000002904 solvent Substances 0.000 claims description 14
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 claims description 14
- 239000011550 stock solution Substances 0.000 claims description 13
- 239000011159 matrix material Substances 0.000 claims description 11
- 238000005245 sintering Methods 0.000 claims description 9
- 238000003756 stirring Methods 0.000 claims description 9
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 8
- 229910052744 lithium Inorganic materials 0.000 claims description 8
- 239000003125 aqueous solvent Substances 0.000 claims description 7
- 239000008367 deionised water Substances 0.000 claims description 7
- 229910021641 deionized water Inorganic materials 0.000 claims description 7
- 239000011259 mixed solution Substances 0.000 claims description 7
- 238000002156 mixing Methods 0.000 claims description 7
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 4
- 230000032683 aging Effects 0.000 claims description 2
- YSHMQTRICHYLGF-UHFFFAOYSA-N 4-tert-butylpyridine Chemical compound CC(C)(C)C1=CC=NC=C1 YSHMQTRICHYLGF-UHFFFAOYSA-N 0.000 claims 1
- JKSIBASBWOCEBD-UHFFFAOYSA-N N,N-bis(4-methoxyphenyl)-9,9'-spirobi[fluorene]-1-amine Chemical compound COc1ccc(cc1)N(c1ccc(OC)cc1)c1cccc2-c3ccccc3C3(c4ccccc4-c4ccccc34)c12 JKSIBASBWOCEBD-UHFFFAOYSA-N 0.000 claims 1
- 239000002253 acid Substances 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 4
- 238000010248 power generation Methods 0.000 abstract description 4
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000009987 spinning Methods 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 13
- 238000002161 passivation Methods 0.000 description 10
- 229910003473 lithium bis(trifluoromethanesulfonyl)imide Inorganic materials 0.000 description 9
- QSZMZKBZAYQGRS-UHFFFAOYSA-N lithium;bis(trifluoromethylsulfonyl)azanide Chemical compound [Li+].FC(F)(F)S(=O)(=O)[N-]S(=O)(=O)C(F)(F)F QSZMZKBZAYQGRS-UHFFFAOYSA-N 0.000 description 9
- 238000001878 scanning electron micrograph Methods 0.000 description 8
- 230000002378 acidificating effect Effects 0.000 description 6
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 description 5
- 229910010413 TiO 2 Inorganic materials 0.000 description 5
- 125000001246 bromo group Chemical group Br* 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 230000018109 developmental process Effects 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- HNCXPJFPCAYUGJ-UHFFFAOYSA-N dilithium bis(trifluoromethylsulfonyl)azanide Chemical compound [Li+].[Li+].FC(F)(F)S(=O)(=O)[N-]S(=O)(=O)C(F)(F)F.FC(F)(F)S(=O)(=O)[N-]S(=O)(=O)C(F)(F)F HNCXPJFPCAYUGJ-UHFFFAOYSA-N 0.000 description 3
- 238000001914 filtration Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/87—Light-trapping means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/311—Purifying organic semiconductor materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a method for stabilizing an interface of a perovskite thin film and a hole transport layer, which comprises the following steps: step S1: cleaning the fluorine-doped tin oxide substrate, and spin-coating TiO on the fluorine-doped tin oxide substrate 2 The precursor solution is sintered after spin coating; step S2: s21: preparing a 1, 4-dibromobenzene precursor; s22: configuration CH 3 NH 3 PbI 3 A precursor; s23: preparing a hole transport layer precursor solution; and step S3: CH configured in step S22 3 NH 3 PbI 3 The precursor solution is subjected to three steps of dropwise adding, spin coating and drying to prepare CH 3 NH 3 PbI 3 A film; and step S4: spin coating 1, 4-dibromobenzene precursor solution to CH 3 NH 3 PbI 3 Carrying out heat treatment on the film; step S5: and coating the hole transport layer material on the surface of the perovskite thin film in a spinning way to obtain a stable interface of the perovskite thin film and the hole transport layer. The 1, 4-dibromobenzene hole transport material can prevent the perovskite thin film from being dissolved by a precursor solution, and avoid the mutual permeation between the perovskite thin film and the hole transport layer in the later battery power generation process.
Description
Technical Field
The invention belongs to the technical field of solar cells, and particularly relates to a method for stabilizing an interface between a perovskite thin film and a hole transport layer.
Background
The exhaustion of energy and environmental pollution make people pay more and more attention to sustainable development, and the development of novel clean energy to relieve the current environmental and energy problems is an important connotation of sustainable development. The characteristic that solar energy is inexhaustible as the source of all energy is that the conversion and utilization from light energy to electric energy become a reliable and powerful energy supply mode.
In recent decades, scientific research results have shown that photovoltaic devices, such as silicon solar cells, have great potential for low cost, ease of manufacture and high conversion efficiency, and after silicon solar cells, researchers have never stopped exploring cheaper, more efficient photovoltaic conversion devices, such as perovskite solar cells, and through the development of 10 years, the photoelectric conversion efficiency has reached 25.5% by 2020, and the maximum area of the cell assembly can reach 808cm 2 . In contrast, the stability problem of perovskite solar cells is considered to be a significant obstacle to their commercialization, with the laboratory reported maximum stable output of perovskite solar cells being only 1 year, which is far from the 20-25 years required for outdoor applications of the cells.
One of the reasons for poor stability of the perovskite solar cell is instability between the perovskite thin film and the hole transport layer thin film, which is caused by the problem of dissolution of the perovskite thin film by a precursor solution of the hole transport material in the preparation process and the problem of mutual permeation between the perovskite thin film and the hole transport layer in the later battery power generation process.
Disclosure of Invention
The technical problem to be solved by the present invention is to provide a method for stabilizing the interface between the perovskite thin film and the hole transport layer, which prevents the dissolution of the precursor solution of the hole transport material to the perovskite thin film during the preparation process, and avoids the mutual permeation between the perovskite thin film and the hole transport layer during the later battery power generation process, in view of the above-mentioned deficiencies in the prior art.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
a method for stabilizing the interface of a perovskite thin film and a hole transport layer comprises the following steps:
step S1: cleaning the fluorine-doped tin oxide substrate, and spin-coating TiO on the cleaned fluorine-doped tin oxide substrate 2 Sintering the precursor solution after the spin coating is finished;
step S2: the step S2 comprises the following steps,
s21: preparing a 1, 4-dibromobenzene precursor solution;
s22: configuration CH 3 NH 3 PbI 3 Precursor solution;
s23: preparing a hole transport layer precursor solution;
and step S3: CH configured in step S22 3 NH 3 PbI 3 The precursor solution is prepared into CH on the fluorine-doped tin oxide matrix prepared in the step S1 through three steps of dropwise adding, spin coating and drying 3 NH 3 PbI 3 A film;
and step S4: spin-coating the 1, 4-dibromobenzene precursor solution prepared in the step S21 on the CH prepared in the step S3 3 NH 3 PbI 3 Carrying out heat treatment on the film;
step S5: the hole transport layer precursor solution prepared in the step S23 is spin-coated on CH containing 1, 4-dibromobenzene by adopting a process of rotating speed of 3000rpm for 30S 3 NH 3 PbI 3 And preparing a stable interface of the perovskite film and the hole transport layer on the surface of the film.
Preferably, the cleaning in the step S1 is ultrasonic cleaning of the fluorine-doped tin oxide substrate with deionized water, acetone and ethanol for 30min, respectively, and spin coating: the rotation speed is 3000rpm, the time is 20s, the sintering temperature is 510 ℃, and the time is 30min.
Preferably, tiO in the step S1 2 The precursor solution is prepared by dissolving tetraisopropyl titanate in ethanol, acetylacetone and weakly acidic aqueous solvent, and standing and aging for 48h before use.
Preferably, in the step S21, the solute of the 1, 4-dibromobenzene precursor solution is 1, 4-dibromobenzene powder, the solvent is isopropanol, and the concentration of the prepared precursor solution is 0.2-2 mg/ml.
Preferably, CH in the step S22 3 NH 3 PbI 3 CH 3 NH 3 I and PbI 2 And CH 3 NH 3 I and PbI 2 Equimolar amount, the solvent was N, N-dimethylformamide.
Preferably, the cavity transport layer precursor solution in step S23 is prepared by uniformly mixing 72.3mg of Spiro-ome tad powder, 28.8 μ ltBP, and 17.5 μ l of lithium bis (trifluoromethanesulfonylimide) stock solution prepared by dissolving 520mg of lithium bis (trifluoromethanesulfonimide) in 1ml of acetonitrile in 1ml of chlorobenzene and stirring at room temperature for 2 hours.
Preferably, CH in the step S22 3 NH 3 I and PbI 2 The mixed solution with N, N-dimethylformamide was magnetically stirred at 70 ℃ for 5 hours and filtered through a 200nm filter head.
Preferably, the spin coating in step S3 is performed at 4000rpm for 10S at a drying pressure of 40Pa to 2000Pa.
Preferably, the spin coating in step S4 is performed at 3000rpm for 30S, and the heat treatment process is annealing at 150 ℃ for 2min.
Compared with the prior art, the invention has the beneficial effects that:
the invention relates to a method for stabilizing an interface of a perovskite film and a hole transport layer, which is characterized in that 1, 4-dibromobenzene molecules are added and absorbed on the interface of the perovskite film and the hole transport layer, the 1, 4-dibromobenzene molecules consist of benzene rings and two bromine groups at two sides and are deposited on the surface of the perovskite film, wherein the bromine group at one side can passivate the surface defect of the film and inhibit the recombination of photogenerated charges in the film, the middle benzene ring can play a role in blocking the diffusion of substances between the perovskite film and the hole transport layer, and the bromine group at the other side also increases the wettability between a precursor solution of the hole transport layer and the perovskite film passivated by the 1, 4-dibromobenzene layer.
Therefore, 1, 4-dibromobenzene molecules are added and absorbed on the interface of the perovskite thin film and the hole transport layer, so that the perovskite thin film is prevented from being dissolved by a precursor solution of the hole transport layer in the preparation process, the mutual permeation between the perovskite thin film and the hole transport layer in the later battery power generation process is avoided, and the prepared perovskite-1, 4-dibromobenzene modified layer-perovskite interface has high charge separation and transmission performance.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention.
In the drawings:
FIG. 1 is an SEM image of a perovskite thin film absorbed with 1, 4-dibromobenzene of example 1.
FIG. 2 is an SEM image of a perovskite thin film of example 2 imbibed with 1, 4-dibromobenzene.
FIG. 3 is an SEM image of a perovskite thin film of example 3 with 1, 4-dibromobenzene absorbed.
FIG. 4 is an SEM image of a perovskite thin film of example 4 with 1, 4-dibromobenzene absorbed.
Fig. 5 is a graph showing the efficiency decay of the perovskite solar cell before and after the interface between the perovskite thin film and the hole transport layer is stabilized.
Fig. 6 is a graph of open circuit voltage/short circuit current density for an unpassivated perovskite solar cell.
FIG. 7 is a graph of open circuit voltage/short circuit current density in example 1.
FIG. 8 is a graph of open circuit voltage/short circuit current density for example 2.
FIG. 9 is a graph of open circuit voltage/short circuit current density for example 3.
FIG. 10 is a graph of open circuit voltage/short circuit current density for example 4.
Detailed Description
The preferred embodiments of the present invention will be described in conjunction with the accompanying drawings, and it should be understood that they are presented herein only to illustrate and explain the present invention and not to limit the present invention.
A method for stabilizing the interface of a perovskite thin film and a hole transport layer is characterized by comprising the following steps: the preparation method comprises the following steps:
step S1: ultrasonic cleaning fluorine-doped tin oxide matrix with deionized water, acetone and ethanol for 30min, respectively, dissolving tetraisopropyl titanate in ethanol, acetylacetone and weakly acidic aqueous solvent to prepare TiO 2 The precursor solution is placed and aged for 48 hours before use, and TiO is spin-coated on the cleaned fluorine-doped tin oxide substrate at 3000rpm 2 And (5) sintering the precursor solution for 20s in a muffle furnace at 510 ℃ for 30min after the spin coating is finished.
Step S2: the step S2 comprises the following steps,
s21: preparing 1, 4-dibromobenzene precursor solution, wherein the solute of the 1, 4-dibromobenzene precursor solution is 1, 4-dibromobenzene powder, the solvent is isopropanol, and the concentration of the prepared solution is 0.2-2 mg/ml.
S22: configuring CH 3 NH 3 PbI 3 Precursor solution, CH 3 NH 3 PbI 3 The solute of the precursor solution is CH 3 NH 3 I and PbI 2 And CH 3 NH 3 I and PbI 2 Equimolar amount, N-dimethylformamide as solvent, magnetically stirring the mixed solution at 70 deg.C for 5 hr, and filtering with 200nm filter head to obtain CH 3 NH 3 PbI 3 And (3) precursor solution.
S23: preparing a hole transport layer precursor solution, wherein the hole transport layer precursor solution is prepared by uniformly mixing 72.3mg of Spiro-OMeTAD powder, 28.8 mu l of tBP and 17.5 mu l of lithium bis (trifluoromethanesulfonyl) imide stock solution in 1ml of chlorobenzene and stirring at room temperature for 2h, wherein the lithium bis (trifluoromethanesulfonyl) imide stock solution is prepared by dissolving 520mg of lithium bis (trifluoromethanesulfonyl) imide in 1ml of acetonitrile.
And step S3: CH configured in step S22 3 NH 3 PbI 3 The precursor solution is prepared into CH on the fluorine-doped tin oxide matrix prepared in the step S1 through three steps of dripping, spin coating and drying 3 NH 3 PbI 3 And the spin coating of the film is carried out at the rotation speed of 4000rpm for 10s and at the drying pressure of 40-2000 Pa.
And step S4: spin-coating the 1, 4-dibromobenzene precursor solution prepared in the step S21 on the CH prepared in the step S3 3 NH 3 PbI 3 The film was spin-coated at 3000rpm for 30s and then annealed at 150 ℃ for 2min.
Step S5: the hole transport layer precursor solution prepared in the step S23 is spin-coated on CH containing 1, 4-dibromobenzene by adopting a process of rotating speed of 3000rpm for 30S 3 NH 3 PbI 3 And preparing a stable interface of the perovskite thin film and the hole transport layer on the surface of the thin film.
For a better understanding of the invention, the technical solution of the invention is further illustrated and described below with reference to examples 1 to 4 and figures 1 to 10.
Example 1
A method for stabilizing the interface of a perovskite thin film and a hole transport layer comprises the following steps:
step S1: ultrasonic cleaning fluorine-doped tin oxide matrix with deionized water, acetone and ethanol for 30min, respectively, dissolving tetraisopropyl titanate in ethanol, acetylacetone and weakly acidic aqueous solvent to prepare TiO 2 The precursor solution is placed and aged for 48 hours before use, and TiO is spin-coated on the cleaned fluorine-doped tin oxide substrate at 3000rpm 2 And (5) sintering the precursor solution for 20s in a muffle furnace at 510 ℃ for 30min after the spin coating is finished.
Step S2: the step S2 comprises the following steps,
s21: preparing a 1, 4-dibromobenzene precursor solution, wherein the solute of the 1, 4-dibromobenzene precursor solution is 1, 4-dibromobenzene powder, the solvent is isopropanol, and the concentration of the prepared solution is 0.2mg/ml.
S22: configuration CH 3 NH 3 PbI 3 Precursor solution, CH 3 NH 3 PbI 3 The solute of the precursor solution is CH 3 NH 3 I and PbI 2 And CH 3 NH 3 I and PbI 2 Equimolar amount, N-dimethylformamide as solvent, magnetically stirring the mixed solution at 70 deg.C for 5 hr, and filtering with 200nm filter head to obtain CH 3 NH 3 PbI 3 And (3) precursor solution.
S23: preparing a hole transport layer precursor solution, wherein the hole transport layer precursor solution is prepared by uniformly mixing 72.3mg of Spiro-OMeTAD powder, 28.8 mu l of tBP and 17.5 mu l of lithium bis (trifluoromethanesulfonyl) imide stock solution in 1ml of chlorobenzene and stirring at room temperature for 2h, wherein the lithium bis (trifluoromethanesulfonyl) imide stock solution is prepared by dissolving 520mg of lithium bis (trifluoromethanesulfonyl) imide in 1ml of acetonitrile.
And step S3: CH configured in step S22 3 NH 3 PbI 3 The precursor solution is prepared into CH on the fluorine-doped tin oxide matrix prepared in the step S1 through three steps of dropwise adding, spin coating and drying 3 NH 3 PbI 3 And the spin coating of the film is carried out at the rotation speed of 4000rpm for 10s and at the drying pressure of 40-2000 Pa.
And step S4: spin-coating the 1, 4-dibromobenzene precursor solution prepared in the step S21 on the CH prepared in the step S3 3 NH 3 PbI 3 The film was spin coated at 3000rpm for 30s and then annealed at 150 ℃ for 2min.
Step S5: the hole transport layer precursor solution prepared in the step S23 is spin-coated on CH containing 1, 4-dibromobenzene by adopting a process of rotating speed of 3000rpm for 30S 3 NH 3 PbI 3 And preparing a stable interface of the perovskite thin film and the hole transport layer on the surface of the thin film.
And finally, placing the prepared perovskite thin film and the hole transport layer in dry air for about 24 hours, and depositing an Ag electrode to obtain the perovskite solar cell.
FIG. 1 is an SEM image of this example, because the passivation layer is extremely thin, the 1, 4-dibromobenzene passivation layer can not be seen, and only the morphology of the perovskite thin film can be seen.
FIG. 7 is a graph showing the open-circuit voltage/short-circuit current density of the present embodiment, wherein the open-circuit voltage is 0.91V and the short-circuit current is 16.78mA/cm 2 The fill factor was calculated to be 73.01% and the photoelectric conversion efficiency was calculated to be 11.15%.
Example 2
A method for stabilizing the interface of a perovskite thin film and a hole transport layer comprises the following steps:
step S1: ultrasonic cleaning of fluorine-doped tin oxide substrate 3 with deionized water, acetone and ethanol respectivelyDissolving tetraisopropyl titanate in ethanol, acetylacetone and weakly acidic aqueous solvent for 0min to obtain TiO 2 The precursor solution is placed and aged for 48 hours before use, and TiO is spin-coated on the cleaned fluorine-doped tin oxide substrate at 3000rpm 2 And (5) sintering the precursor solution for 20s in a muffle furnace at 510 ℃ for 30min after the spin coating is finished.
Step S2: the step S2 comprises the following steps,
s21: preparing a 1, 4-dibromobenzene precursor solution, wherein the solute of the 1, 4-dibromobenzene precursor solution is 1, 4-dibromobenzene powder, the solvent is isopropanol, and the concentration of the prepared solution is 0.6mg/ml.
S22: configuration CH 3 NH 3 PbI 3 Precursor solution, CH 3 NH 3 PbI 3 The solute of the precursor solution is CH 3 NH 3 I and PbI 2 And CH 3 NH 3 I and PbI 2 Equimolar amount, solvent is N, N-dimethyl formamide, the mixed solution is magnetically stirred for 5h at 70 ℃, and is filtered by a filter head with the diameter of 200nm to obtain CH 3 NH 3 PbI 3 And (3) precursor solution.
S23: preparing a hole transport layer precursor solution, wherein the hole transport layer precursor solution is prepared by uniformly mixing 72.3mg of Spiro-OMeTAD powder, 28.8 mu l of tBP and 17.5 mu l of lithium bis (trifluoromethanesulfonyl) imide stock solution in 1ml of chlorobenzene and stirring at room temperature for 2h, wherein the lithium bis (trifluoromethanesulfonyl) imide stock solution is prepared by dissolving 520mg of lithium bis (trifluoromethanesulfonyl) imide in 1ml of acetonitrile.
And step S3: CH configured in step S22 3 NH 3 PbI 3 The precursor solution is prepared into CH on the fluorine-doped tin oxide matrix prepared in the step S1 through three steps of dropwise adding, spin coating and drying 3 NH 3 PbI 3 And the spin coating of the film is carried out at the rotation speed of 4000rpm for 10s and at the drying pressure of 40-2000 Pa.
And step S4: spin-coating the 1, 4-dibromobenzene precursor solution prepared in the step S21 on the CH prepared in the step S3 3 NH 3 PbI 3 The film was spin-coated at 3000rpm for 30s and then annealed at 150 ℃ for 2min.
Step S5: spin-coating the hole transport layer precursor solution prepared in the step S23 on CH containing 1, 4-dibromobenzene by adopting a process of rotating speed of 3000rpm for 30S 3 NH 3 PbI 3 And preparing a stable interface of the perovskite thin film and the hole transport layer on the surface of the thin film.
And finally, placing the prepared perovskite thin film and the hole transport layer in dry air for about 24 hours, and depositing an Ag electrode to prepare the perovskite solar cell.
FIG. 2 is an SEM image of this example showing no 1, 4-dibromobenzene passivation layer.
FIG. 8 is a graph showing the open-circuit voltage/short-circuit current density of the present example, wherein the open-circuit voltage is 0.92V and the short-circuit current is 16.90mA/cm 2 The fill factor was calculated to be 75.32% and the photoelectric conversion efficiency was calculated to be 11.77%.
Example 3
A method for stabilizing the interface of a perovskite thin film and a hole transport layer comprises the following steps:
step S1: ultrasonic cleaning fluorine-doped tin oxide matrix with deionized water, acetone and ethanol for 30min, dissolving tetraisopropyl titanate in ethanol, acetylacetone and weakly acidic aqueous solvent to prepare TiO 2 The precursor solution is placed and aged for 48 hours before use, and TiO is spin-coated on the cleaned fluorine-doped tin oxide substrate at 3000rpm 2 And (5) sintering the precursor solution for 20s in a muffle furnace at 510 ℃ for 30min after the spin coating is finished.
Step S2: the step S2 comprises the following steps,
s21: preparing a 1, 4-dibromobenzene precursor solution, wherein the solute of the 1, 4-dibromobenzene precursor solution is 1, 4-dibromobenzene powder, the solvent is isopropanol, and the concentration of the prepared solution is 0.2mg/ml.
S22: configuring CH 3 NH 3 PbI 3 Precursor solution, CH 3 NH 3 PbI 3 The solute of the precursor solution is CH 3 NH 3 I and PbI 2 And CH 3 NH 3 I and PbI 2 Equimolar amount, solvent is N, N-dimethyl formamide, the mixed solution is magnetically stirred for 5 hours at 70 ℃,filtering with 200nm filter head to obtain CH 3 NH 3 PbI 3 And (3) precursor solution.
S23: preparing a hole transport layer precursor solution, wherein the hole transport layer precursor solution is prepared by uniformly mixing 72.3mg of Spiro-OMeTAD powder, 28.8 mu l of tBP and 17.5 mu l of lithium bis (trifluoromethanesulfonylimide) stock solution in 1ml of chlorobenzene and stirring at room temperature for 2h, and the lithium bis (trifluoromethanesulfonylimide) stock solution is prepared by dissolving 520mg of lithium bis (trifluoromethanesulfonimide) in 1ml of acetonitrile.
And step S3: CH configured in step S22 3 NH 3 PbI 3 The precursor solution is prepared into CH on the fluorine-doped tin oxide matrix prepared in the step S1 through three steps of dripping, spin coating and drying 3 NH 3 PbI 3 The spin coating speed is 4000rpm, the time is 10s, and the drying pressure is 40 Pa-2000 Pa.
And step S4: spin-coating the 1, 4-dibromobenzene precursor solution prepared in the step S21 on the CH prepared in the step S3 3 NH 3 PbI 3 Spin coating on the film at 5000rpm for 30s, and annealing at 150 deg.C for 2min.
Step S5: spin-coating the hole transport layer precursor solution prepared in the step S23 on CH containing 1, 4-dibromobenzene by adopting a process of rotating speed of 3000rpm for 30S 3 NH 3 PbI 3 And preparing a stable interface of the perovskite film and the hole transport layer on the surface of the film.
And finally, placing the prepared perovskite thin film and the hole transport layer in dry air for about 24 hours, and depositing an Ag electrode to prepare the perovskite solar cell.
FIG. 3 is an SEM image of this example, which shows a thicker 1, 4-dibromobenzene passivation layer in the black mottled area, and the thicker 1, 4-dibromobenzene passivation layer can be clearly shown in the local area because the thickness of the 1, 4-dibromobenzene passivation layer is already very thick under the parameters.
FIG. 7 is a graph showing the open-circuit voltage/short-circuit current density of the present example, wherein the open-circuit voltage is 1.01V and the short-circuit current is 17.02mA/cm 2 Fill factor was calculated to be 78.14% lightThe electrical conversion efficiency was 13.50%.
Example 4
A method for stabilizing the interface of a perovskite thin film and a hole transport layer comprises the following steps:
step S1: ultrasonic cleaning fluorine-doped tin oxide matrix with deionized water, acetone and ethanol for 30min, dissolving tetraisopropyl titanate in ethanol, acetylacetone and weakly acidic aqueous solvent to prepare TiO 2 The precursor solution is placed and aged for 48 hours before use, and TiO is spin-coated on the cleaned fluorine-doped tin oxide substrate at 3000rpm 2 And (5) sintering the precursor solution for 20s in a muffle furnace at 510 ℃ for 30min after the spin coating is finished.
Step S2: the step S2 comprises the following steps,
s21: preparing a 1, 4-dibromobenzene precursor solution, wherein the solute of the 1, 4-dibromobenzene precursor solution is 1, 4-dibromobenzene powder, the solvent is isopropanol, and the concentration of the prepared solution is 0.2mg/ml.
S22: configuring CH 3 NH 3 PbI 3 Precursor solution, CH 3 NH 3 PbI 3 The solute of the precursor solution is CH 3 NH 3 I and PbI 2 And CH 3 NH 3 I and PbI 2 Equimolar amount, solvent is N, N-dimethyl formamide, the mixed solution is magnetically stirred for 5h at 70 ℃, and is filtered by a filter head with the diameter of 200nm to obtain CH 3 NH 3 PbI 3 And (3) precursor solution.
S23: preparing a hole transport layer precursor solution, wherein the hole transport layer precursor solution is prepared by uniformly mixing 72.3mg of Spiro-OMeTAD powder, 28.8 mu l of tBP and 17.5 mu l of lithium bis (trifluoromethanesulfonylimide) stock solution in 1ml of chlorobenzene and stirring at room temperature for 2h, and the lithium bis (trifluoromethanesulfonylimide) stock solution is prepared by dissolving 520mg of lithium bis (trifluoromethanesulfonimide) in 1ml of acetonitrile.
And step S3: CH configured in step S22 3 NH 3 PbI 3 The precursor solution is prepared into CH on the fluorine-doped tin oxide matrix prepared in the step S1 through three steps of dropwise adding, spin coating and drying 3 NH 3 PbI 3 Film, spin coating at a rotation speed of 4000rpm for 10s and a drying pressure of 40-2000 Pa.
And step S4: spin-coating the 1, 4-dibromobenzene precursor solution prepared in the step S21 on the CH prepared in the step S3 3 NH 3 PbI 3 Spin coating on the film at 5000rpm for 50s, and annealing at 150 deg.C for 2min.
Step S5: the hole transport layer precursor solution prepared in the step S23 is spin-coated on CH containing 1, 4-dibromobenzene by adopting a process of rotating speed of 3000rpm for 30S 3 NH 3 PbI 3 And preparing a stable interface of the perovskite film and the hole transport layer on the surface of the film.
And finally, placing the prepared perovskite thin film and the hole transport layer in dry air for about 24 hours, and depositing an Ag electrode to prepare the perovskite solar cell.
FIG. 4 is an SEM image of this example showing no 1, 4-dibromobenzene passivation layer.
FIG. 7 is a graph of open-circuit voltage/short-circuit current density of the present embodiment, wherein the open-circuit voltage is 1.00V and the short-circuit current is 16.85mA/cm 2 The fill factor was calculated to be 76.69%, and the photoelectric conversion efficiency was calculated to be 12.91%.
1. The output performance of the assembled perovskite solar cell is measured by adopting a Keithley 2400 digital source meter solar cell analyzer under simulated standard sunlight, as shown in FIG. 5, the solar energy conversion efficiency of the passivated interface added with 1, 4-dibromobenzene is obviously improved, and the conversion efficiency is more slowly reduced relative to the unpassivated interface without 1, 4-dibromobenzene along with the increase of time.
2. An open-circuit voltage/short-circuit current density test is carried out on an unpassivated interface without 1, 4-dibromobenzene, so that the open-circuit voltage is 0.91V, and the short-circuit current is 15.09mA/cm 2 The fill factor was calculated to be 68.89%, and the photoelectric conversion efficiency was calculated to be 9.46%.
3. A summary of the experiments for examples 1-4 and the unpassivated interface without the addition of 1, 4-dibromobenzene is shown in Table 1 below. It can be seen that:
(1) After the 1, 4-dibromobenzene is added, the open-circuit voltage of the perovskite thin film and the hole transport layer is improved. The direct contact between the perovskite thin film and the hole transport layer is blocked in a local area by the 1, 4-dibromobenzene passivation, so that the leakage current of the working area of the battery is further reduced, and the open-circuit voltage of the battery is improved.
(2) After the 1, 4-dibromobenzene is added, the short-circuit current of the perovskite thin film and the hole transport layer is improved. Bromine groups in the 1, 4-dibromobenzene can passivate defects on the surface of the perovskite thin film, and reverse recombination of photo-generated charges in the transmission process is inhibited, so that forward transmission is promoted, and short-circuit current is improved.
(3) After the 1, 4-dibromobenzene is added, the filling factor of the perovskite film and the hole transport layer is improved. Recombination inside the battery is suppressed, so that the fill factor is improved.
(4) After 1, 4-dibromobenzene is added, the photoelectric conversion efficiency of the perovskite thin film and the hole transport layer is improved.
In conclusion, with the precursor concentration increased from 0mg/ml to 0.2mg/ml and then to 0.6mg/ml, the conversion efficiency of the cell is increased and then decreased, and when the precursor concentration is 0.2mg/ml, the cell efficiency is optimal; when the concentration of the precursor is 0.2mg/ml, the battery efficiency is further increased as the spin-coating speed is increased from 3000rpm to 5000rpm, but the loading of the precursor is sharply reduced by further increasing the spin-coating speed, so that the battery efficiency is optimal when the spin-coating speed is 5000 rpm. When the precursor concentration is 0.2mg/ml and the spin speed is 5000rpm, the cell efficiency is slightly decreased if the spin time is increased from 30s to 50s, and thus the cell efficiency is optimal when the spin time is 30 s.
The optimal passivation effect is determined by the thickness of the passivation layer of the 1, 4-dibromobenzene, the thickness of the 1, 4-dibromobenzene layer is controlled mainly by the concentration of the precursor, the spin-coating speed and the spin-coating time, and from the result of battery efficiency, the current concentration of the 1, 4-dibromobenzene is 0.2mg/ml, the spin-coating speed is 5000rpm, and the spin-coating time is 30s, so that the battery performance is best.
The result shows that the method of the invention obviously improves the interface stability of the perovskite thin film and the hole transport layer.
TABLE 1 test results for unpassivated interfaces and examples 1-4
The foregoing shows and describes the general principles, essential features, and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are described in the specification and illustrated only to illustrate the principle of the present invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the present invention, which fall within the scope of the invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (8)
1. A method for stabilizing the interface of a perovskite thin film and a hole transport layer is characterized in that: the method comprises the following steps:
step S1: cleaning the fluorine-doped tin oxide substrate, and spin-coating TiO on the cleaned fluorine-doped tin oxide substrate 2 Sintering the precursor solution after the spin coating is finished;
step S2: comprises the following steps of (a) carrying out,
s21: preparing a 1, 4-dibromobenzene precursor solution, preparing a solute of 1, 4-dibromobenzene powder from the 1, 4-dibromobenzene precursor solution, and a solvent of isopropanol, wherein the concentration of the prepared precursor solution is 0.2 to 2mg/ml;
s22: configuration CH 3 NH 3 PbI 3 Precursor solution;
s23: preparing a hole transport layer precursor solution;
and step S3: CH configured in step S22 3 NH 3 PbI 3 The precursor solution is prepared into CH on the fluorine-doped tin oxide matrix prepared in the step S1 through three steps of dripping, spin coating and drying 3 NH 3 PbI 3 A film;
and step S4: spin-coating the 1, 4-dibromobenzene precursor solution prepared in the step S21 on the CH prepared in the step S3 3 NH 3 PbI 3 Carrying out heat treatment on the film;
step S5: spin-coating the hole transport layer precursor solution prepared in the step S23 on CH containing 1, 4-dibromobenzene by adopting a process of rotating speed of 3000rpm for 30S 3 NH 3 PbI 3 And preparing a stable interface of the perovskite thin film and the hole transport layer on the surface of the thin film.
2. The method of stabilizing an interface between a perovskite thin film and a hole transport layer according to claim 1, wherein: the cleaning in the step S1 is that deionized water, acetone and ethanol are respectively subjected to ultrasonic cleaning on the fluorine-doped tin oxide substrate for 30min, and spin coating is carried out: the rotation speed is 3000rpm, the time is 20s, the sintering temperature is 510 ℃, and the time is 30min.
3. The method of stabilizing an interface between a perovskite thin film and a hole transport layer according to claim 1, wherein: tiO in the step S1 2 The precursor solution is prepared by dissolving tetraisopropyl titanate in ethanol, acetylacetone and a weak acid aqueous solvent, and standing and aging for 48h before use.
4. The method of stabilizing an interface between a perovskite thin film and a hole transport layer according to claim 1, wherein: CH in the step S22 3 NH 3 PbI 3 The solute of the precursor solution is CH 3 NH 3 I and PbI 2 And CH 3 NH 3 And PbI 3 Equimolar amount, the solvent was N, N-dimethylformamide.
5. The method of stabilizing an interface between a perovskite thin film and a hole transport layer according to claim 1, wherein: the cavity transport layer precursor solution in the step S23 is prepared by uniformly mixing 72.3mg of 2,2', 7' -tetrakis [ N, N-bis (4-methoxyphenyl) amino ] -9,9' -spirobifluorene powder, 28.8 μ l of 4-tert-butylpyridine and 17.5 μ l of a lithium bis (trifluoromethanesulfonylimide) stock solution in 1ml of chlorobenzene and stirring at room temperature for 2 hours, wherein the lithium bis (trifluoromethanesulfonylimide) stock solution is prepared by dissolving 520mg of lithium bis (trifluoromethanesulfonylimide) in 1ml of acetonitrile.
6. A method of stabilizing the interface of a perovskite thin film and a hole transport layer according to claim 3, wherein: CH in the step S22 3 NH 3 I and PbI 2 The mixed solution with N, N-dimethylformamide was magnetically stirred at 70 ℃ for 5 hours and filtered through a 200nm filter head.
7. The method of stabilizing an interface between a perovskite thin film and a hole transport layer according to claim 1, wherein: the rotation speed of the spin coating in the step S3 is 4000rpm, the time is 10S, and the drying pressure is 40-2000 Pa.
8. The method of stabilizing an interface between a perovskite thin film and a hole transport layer according to claim 1, wherein: the rotation speed of the spin coating in the step S4 is 3000rpm, the time is 30S, the heat treatment process is annealing, the temperature is 150 ℃, and the time is 2min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110402386.9A CN113299838B (en) | 2021-04-14 | 2021-04-14 | Method for stabilizing interface of perovskite thin film and hole transport layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110402386.9A CN113299838B (en) | 2021-04-14 | 2021-04-14 | Method for stabilizing interface of perovskite thin film and hole transport layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113299838A CN113299838A (en) | 2021-08-24 |
| CN113299838B true CN113299838B (en) | 2022-10-04 |
Family
ID=77319883
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110402386.9A Expired - Fee Related CN113299838B (en) | 2021-04-14 | 2021-04-14 | Method for stabilizing interface of perovskite thin film and hole transport layer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113299838B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108117568A (en) * | 2017-11-28 | 2018-06-05 | 苏州大学 | Silicon substrate triphenylamine derivative and preparation method thereof and the application in perovskite solar cell |
| WO2018137048A1 (en) * | 2017-01-30 | 2018-08-02 | Tan Hairen | Contact passivation for perovskite optoelectronics |
| CN108878661A (en) * | 2018-06-29 | 2018-11-23 | 西北工业大学 | A kind of preparation method of the perovskite solar battery of carbon quantum dot modification |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102137465B1 (en) * | 2019-05-21 | 2020-07-24 | 포항공과대학교 산학협력단 | Electron transport layer comprising zwitterion layer, solar cell comprising same and method of preparing same |
-
2021
- 2021-04-14 CN CN202110402386.9A patent/CN113299838B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018137048A1 (en) * | 2017-01-30 | 2018-08-02 | Tan Hairen | Contact passivation for perovskite optoelectronics |
| CN108117568A (en) * | 2017-11-28 | 2018-06-05 | 苏州大学 | Silicon substrate triphenylamine derivative and preparation method thereof and the application in perovskite solar cell |
| CN108878661A (en) * | 2018-06-29 | 2018-11-23 | 西北工业大学 | A kind of preparation method of the perovskite solar battery of carbon quantum dot modification |
Non-Patent Citations (3)
| Title |
|---|
| "Enchancing the phase stability of inorganic α-CSPbI3 by the bication conjugated organic molecule for efficient perovskite solar cells";Xihong Ding等;《Applied Materials&Interfaces》;20191007;第11卷;第37720-37725页 * |
| "Rational design of dipolar chromophore as an efficient dopant-free hole-transport material for perovskite solar cells";Zhong"an Li等;《JACS》;20160823;第138卷;第11833-11839页 * |
| "Molecular design with silicon core:toward commercially available hole transport materials for high-performance planar P-i-n perovskite solar cells";Rongming Xue等;《Joural of Materials Chemistry A》;20171201;第6卷;第404-413页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113299838A (en) | 2021-08-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108878554B (en) | Lanthanide rare earth ion doping-based CsPbBr3All-inorganic perovskite solar cell and preparation method and application thereof | |
| CN106410046B (en) | A kind of perovskite solar battery and preparation method thereof containing hydrophobic electrode decorative layer | |
| Pang et al. | Electrospun membranes of imidazole-grafted PVDF-HFP polymeric ionic liquids for highly efficient quasi-solid-state dye-sensitized solar cells | |
| CN110635040B (en) | Method for preparing double-layer perovskite light absorption layer | |
| CN104733183B (en) | Ca-Ti ore type solar cell and preparation method thereof | |
| CN110047951A (en) | It is prepared and its is applied based on doped transition metal ions full-inorganic perovskite battery | |
| CN108288675B (en) | Iron salt doped cyclone-OMeTAD hole transport layer and solar cell comprising same | |
| CN105932162B (en) | A kind of perovskite solar battery and preparation method thereof | |
| CN108054279B (en) | FK102 ligand modified perovskite type solar cell and preparation method of perovskite layer thereof | |
| Jang et al. | Improved electrochemical performance of dye-sensitized solar cell via surface modifications of the working electrode by electrodeposition | |
| CN108470833A (en) | Application of the nanometic zinc oxide rod array of modifying interface as electron transfer layer in preparing perovskite solar cell | |
| CN108899421A (en) | Full-inorganic perovskite solar battery and its preparation method and application based on polyaniline and zinc oxide photoactive layers | |
| CN107799316A (en) | A kind of PbS quantum is sensitized TiO2The preparation method and applications of film | |
| CN113299838B (en) | Method for stabilizing interface of perovskite thin film and hole transport layer | |
| CN112531117A (en) | AgBiI4-perovskite double light absorption layer thin film and solar cell preparation method | |
| CN110176542B (en) | Organic-inorganic composite hole transport film for perovskite battery and preparation method thereof | |
| CN110085428A (en) | A kind of compound light anode of titanium dioxide/graphene and preparation method thereof | |
| JP2001358348A (en) | Photoelectric conversion device and its manufacturing method | |
| CN106847518B (en) | A kind of dye-sensitized solar cell anode and preparation method thereof | |
| CN113707816B (en) | Preparation method of perovskite solar cell | |
| CN113328040B (en) | Preparation method of organic solar cell with ZnO doped Fe2O3 as cathode interface layer material | |
| CN101976610B (en) | Solar cell collaboratively sensitized by organic dye and ruthenium dye and preparation method thereof | |
| CN110359058B (en) | Preparation method of lead zirconate titanate modified hematite nanorod array photoanode | |
| CN109860393B (en) | Amino hydroxyquinoline compound-doped perovskite type solar cell and preparation method thereof | |
| JP2002280084A (en) | Photoelectric conversion device and manufacturing method therefor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20221004 |