CN113299422A - Crystalline silicon solar cell front silver paste and preparation method thereof - Google Patents
Crystalline silicon solar cell front silver paste and preparation method thereof Download PDFInfo
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- CN113299422A CN113299422A CN202110492522.8A CN202110492522A CN113299422A CN 113299422 A CN113299422 A CN 113299422A CN 202110492522 A CN202110492522 A CN 202110492522A CN 113299422 A CN113299422 A CN 113299422A
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 55
- 229910052709 silver Inorganic materials 0.000 title claims abstract description 34
- 239000004332 silver Substances 0.000 title claims abstract description 34
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 15
- 238000002360 preparation method Methods 0.000 title claims abstract description 6
- 239000011521 glass Substances 0.000 claims abstract description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000000843 powder Substances 0.000 claims abstract description 16
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 8
- 239000002245 particle Substances 0.000 claims abstract description 8
- 238000003756 stirring Methods 0.000 claims description 32
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 18
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 claims description 17
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 14
- 238000000498 ball milling Methods 0.000 claims description 14
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 12
- 239000006185 dispersion Substances 0.000 claims description 12
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 claims description 12
- 239000007788 liquid Substances 0.000 claims description 11
- 229910052681 coesite Inorganic materials 0.000 claims description 10
- 229910052906 cristobalite Inorganic materials 0.000 claims description 10
- 239000000377 silicon dioxide Substances 0.000 claims description 10
- 229910052682 stishovite Inorganic materials 0.000 claims description 10
- 229910052905 tridymite Inorganic materials 0.000 claims description 10
- 239000002904 solvent Substances 0.000 claims description 9
- 239000002131 composite material Substances 0.000 claims description 8
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 8
- 239000002002 slurry Substances 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 6
- 229920002125 Sokalan® Polymers 0.000 claims description 6
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 6
- 239000004584 polyacrylic acid Substances 0.000 claims description 6
- 238000007873 sieving Methods 0.000 claims description 6
- 229910001961 silver nitrate Inorganic materials 0.000 claims description 6
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 3
- QXLPXWSKPNOQLE-UHFFFAOYSA-N methylpentynol Chemical compound CCC(C)(O)C#C QXLPXWSKPNOQLE-UHFFFAOYSA-N 0.000 claims description 3
- 239000004115 Sodium Silicate Substances 0.000 claims description 2
- 239000012298 atmosphere Substances 0.000 claims description 2
- 239000003638 chemical reducing agent Substances 0.000 claims description 2
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052911 sodium silicate Inorganic materials 0.000 claims description 2
- 239000004094 surface-active agent Substances 0.000 claims description 2
- 238000005303 weighing Methods 0.000 claims description 2
- 229910001873 dinitrogen Inorganic materials 0.000 claims 1
- 238000005245 sintering Methods 0.000 abstract description 8
- 239000002270 dispersing agent Substances 0.000 abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 abstract 1
- 229960001484 edetic acid Drugs 0.000 abstract 1
- 229910021485 fumed silica Inorganic materials 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 7
- QNVRIHYSUZMSGM-UHFFFAOYSA-N hexan-2-ol Chemical compound CCCCC(C)O QNVRIHYSUZMSGM-UHFFFAOYSA-N 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- 238000001035 drying Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- RYZCLUQMCYZBJQ-UHFFFAOYSA-H lead(2+);dicarbonate;dihydroxide Chemical compound [OH-].[OH-].[Pb+2].[Pb+2].[Pb+2].[O-]C([O-])=O.[O-]C([O-])=O RYZCLUQMCYZBJQ-UHFFFAOYSA-H 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012074 organic phase Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
- H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Dispersion Chemistry (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Sustainable Development (AREA)
- Electromagnetism (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Energy (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
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- Power Engineering (AREA)
- Conductive Materials (AREA)
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Abstract
The invention discloses a preparation method of crystalline silicon solar cell front silver paste, which comprises the steps of adding silver powder with the average particle size of less than or equal to 200 nm and uniformly dispersed glass powder bonding phase into an organic carrier, and preparing the crystalline silicon solar cell front silver paste under the combined action of an organic dispersing agent, ethylene diamine tetraacetic acid and an inorganic anti-settling agent, namely fumed silica, in a uniformly dispersed state in the silver paste. The invention solves the technical problems that in the process of preparing silver paste from the front surface of the silicon battery, gas escapes in the sintering process to cause printed stripe cracks and the stable conduction of the silver electrode on the front surface of the battery cannot be ensured.
Description
Technical Field
The invention belongs to the technical field of solar cells, and particularly relates to a crystalline silicon solar cell front silver paste and a preparation method thereof.
Background
The crystalline silicon solar cell is the solar cell with the highest application rate at present, and the metallized electrode is a key material of the crystalline silicon solar cell, particularly a front grid material, and directly influences performance indexes of the solar cell, such as photoelectric conversion efficiency, filling factor, series resistance and the like. The electrode silver paste is used as a key material of the electrode and the grid line film of the crystalline silicon solar cell, plays a role in leading out the electrode and collecting current in the solar cell, greatly influences the photoelectric conversion efficiency of the solar cell by the quality of the electrode silver paste performance, and directly determines the service life and the attenuation degree of the cell.
Further improvement of the photoelectric conversion efficiency of the cell and reduction of the manufacturing cost are constant targets pursued in the solar cell manufacturing industry, and it is difficult to further improve the efficiency of the silicon-based solar cell. Therefore, the development in the future is focused on developing new battery materials and on how to reduce the cost. The high-efficiency photovoltaic solar cell requires a front silver electrode to be 'fine grid dense planting', the front electrode with thin grid lines and smooth and flat appearance is required to be obtained, and the conductive silver paste has the advantages of easiness in passing through a net, good leveling property and large height-width ratio, namely has special requirements on the rheological property of the paste.
Disclosure of Invention
The invention provides a preparation method of a crystalline silicon photovoltaic cell front electrode silver paste, which comprises the following steps:
(1) preparing 50-100 parts of silver powder with the average particle size of less than or equal to 200 nm;
(2) weighing 15-30 parts of SnO2、SiO2、TiO2、Nb2O5、ZnO2Ultrasonically dispersing the formed glass powder in an absolute ethyl alcohol solvent to prepare glass dispersion liquid; wherein the glass powder comprises SnO in parts by weight215 to 18 parts of SiO2 17 to 23 parts of TiO216 to 19 parts by weight of Nb2O5 15 to 22 parts of ZnO2 16-26 parts;
(3) adding 15-30 parts of ethylenediamine tetramethylene phosphoric acid into a high-speed mixer, firstly adding 1-2 parts of methylpentanol and 2-5 parts of anti-settling agent under the stirring state at the rotating speed of 400-800 rpm, then slowly adding the silver powder prepared in the step (1), and stirring for 1-5 hours at 800-1000 rpm; adding the glass dispersion liquid prepared in the step (2) into a high-speed mixer at a speed of 1-3 mL/s under a stirring state with a rotating speed of 400-800 rpm, and then stirring for 1-5 h at 500-700 rpm;
(4) and (4) placing the composite slurry prepared in the step (3) into a ball milling tank for ball milling, and sieving by using a 100-mesh sieve to prepare the silver paste.
Preferably, the step (1) is specifically: silver nitrate is used as a silver source, ethylene glycol is used as a solvent and a reducing agent, and polyacrylic acid is used as a surfactant, so that the silver powder with the average particle size of less than or equal to 200 nm is prepared.
Preferably, in the step (2), the glass powder is made of SnO with average particle size of less than or equal to 500 nm2、SiO2、TiO2、Nb2O5、ZnO2And (3) powder composition.
Preferably, the anti-settling agent in step (3) is sodium silicate.
Preferably, the ball milling atmosphere of the composite slurry prepared in the step (4) is nitrogen.
Therefore, the beneficial effects of the invention are as follows:
(1) the silver paste prepared by the invention does not contain lead, has small harm to human bodies and environment, and completely meets the requirement of environmental protection and no lead;
(2) the process for preparing the silver powder for the solar cell is simple, the cost is low, the prepared silver powder is irregular spherical, and compared with the traditional silver powder, the silver powder has the characteristics of large specific surface area, uniform particle size distribution and small morphology difference, can be better contacted with an inorganic phase and an organic phase, has high sintering activity, and can effectively reduce the contact resistance after sintering;
(3) above-mentioned crystalline silicon photovoltaic cell positive electrode silver thick liquid is at the in-process of preparing silver thick liquid with silver powder, because the carrier solvent, the dispersant and the anti-settling agent that adopt are inorganic high temperature resistant component, and do not adopt organic dispersant, so the in-process of silver thick liquid printing back sintering can not the escape gas, causes the printing stripe crack to can effectively guarantee the stable electrically conductive technological effect of battery positive silver electrode.
Detailed Description
The following is a detailed description with reference to examples:
example 1
(1) Dissolving 50 g of silver nitrate in 1L of ethylene glycol, stirring for 30 minutes, adding 10 g of polyacrylic acid, stirring at 300 rpm at 40 ℃ for 1 hour to obtain nano silver powder;
(2) 15 parts of SnO221 parts of SiO216 parts of TiO218 parts of Nb2O518 parts of ZnO2Ultrasonically dispersing the formed glass powder in an absolute ethyl alcohol solvent to prepare glass dispersion liquid;
(3) adding 22% ethylene diamine tetra methylene phosphoric acid into a high-speed mixer, firstly adding 1 part of methyl amyl alcohol and 2 parts of anti-settling agent under the stirring state of the rotating speed of 500 rpm, then slowly adding the silver powder prepared in the step (1), and stirring for 3 hours at 1000 rpm; adding the glass dispersion prepared in the step (2) into a high-speed mixer at a speed of 2 mL/s in a stirring state at a rotating speed of 500 rpm, and then stirring for 3 hours at 600 rpm;
(4) and (4) placing the composite slurry prepared in the step (3) into a ball milling tank for ball milling, and sieving by using a 100-mesh sieve to prepare the silver paste.
Printing silver paste on a 125 mm multiplied by 125 mm Si substrate by adopting a screen printer, drying at 150 ℃, rapidly firing an electrode lead at 800 ℃, sintering at high temperature to obtain the electrode lead with silvery white surface, smoothness, no defects, 8N/cm of peel strength, good soldering performance, less than 10 Siemens/sq of sheet resistance, 18.9% of photoelectric conversion efficiency of the prepared solar cell and more than 10N/mm of adhesive force according to tensile force test result2。
Example 2
(1) Dissolving 80 g of silver nitrate in 1L of ethylene glycol, stirring for 30 minutes, adding 20 g of polyacrylic acid, stirring at 300 rpm at 40 ℃ for 1 hour to obtain nano silver powder;
(2) 18 parts of SnO223 parts of SiO219 parts of TiO215 parts of Nb2O516 parts of ZnO2Ultrasonically dispersing the formed glass powder in an absolute ethyl alcohol solvent to prepare glass dispersion liquid;
(3) adding 25% ethylene diamine tetra methylene phosphoric acid into a high-speed mixer, firstly adding 1 part of methyl amyl alcohol and 2 parts of anti-settling agent under the stirring state of the rotating speed of 500 rpm, then slowly adding the silver powder prepared in the step (1), and stirring for 3 hours at 1000 rpm; adding the glass dispersion prepared in the step (2) into a high-speed mixer at a speed of 2 mL/s in a stirring state at a rotating speed of 500 rpm, and then stirring for 3 hours at 600 rpm;
(4) and (4) placing the composite slurry prepared in the step (3) into a ball milling tank for ball milling, and sieving by using a 100-mesh sieve to prepare the silver paste.
Printing silver paste on a 125 mm multiplied by 125 mm Si substrate by adopting a screen printer, drying at 150 ℃, rapidly firing an electrode lead at 800 ℃, sintering at high temperature to obtain the electrode lead with silvery white surface, smoothness, no defects, 8N/cm of peel strength, good soldering performance, less than 10 Siemens/sq of sheet resistance, 19.4% of photoelectric conversion efficiency of the prepared solar cell and more than 10N/mm of adhesive force according to tensile force test result2。
Example 3
(1) Dissolving 50 g of silver nitrate in 1L of ethylene glycol, stirring for 30 minutes, adding 8 g of polyacrylic acid, stirring at 300 rpm at 40 ℃ for 1.5 hours to obtain nano silver powder;
(2) 18 parts of SnO217 parts of SiO219 parts of TiO222 parts of Nb2O525 parts of ZnO2Ultrasonically dispersing the formed glass powder in an absolute ethyl alcohol solvent to prepare glass dispersion liquid;
(3) adding 18% ethylene diamine tetramethylene phosphoric acid into a high-speed mixer, firstly adding 1 part of methylpentanol and 2 parts of anti-settling agent under the stirring state with the rotating speed of 500 rpm, then slowly adding the silver powder prepared in the step (1), and stirring for 3 hours at 1000 rpm; adding the glass dispersion prepared in the step (2) into a high-speed mixer at a speed of 2 mL/s in a stirring state at a rotating speed of 500 rpm, and then stirring for 3 hours at 600 rpm;
(4) and (4) placing the composite slurry prepared in the step (3) into a ball milling tank for ball milling, and sieving by using a 100-mesh sieve to prepare the silver paste.
Printing silver paste on 125 mm × 125 mm Si base by screen printerDrying the electrode lead on a plate at 150 ℃, quickly firing the electrode lead at 800 ℃, sintering the electrode lead at high temperature to obtain the electrode lead with silver white surface, smoothness, no defects, 8N/cm of peeling strength, good soldering performance and less than 10 Siemens/sq of sheet resistance, wherein the photoelectric conversion efficiency of the prepared solar cell is 18.8 percent, and the tensile force test result shows that the adhesive force is more than 10N/mm2。
Example 4
(1) Dissolving 70 g of silver nitrate in 1L of ethylene glycol, stirring for 30 minutes, adding 12 g of polyacrylic acid, stirring at 300 rpm at 40 ℃ for 2 hours to obtain nano silver powder;
(2) 18 parts of SnO222 parts of SiO219 parts of TiO216 parts of Nb2O526 parts of ZnO2Ultrasonically dispersing the formed glass powder in an absolute ethyl alcohol solvent to prepare glass dispersion liquid;
(3) adding 19% ethylene diamine tetra methylene phosphoric acid into a high-speed mixer, firstly adding 2 parts of methyl amyl alcohol and 3 parts of anti-settling agent under the stirring state of the rotating speed of 500 rpm, then slowly adding the silver powder prepared in the step (1), and stirring for 3 hours at 1000 rpm; adding the glass dispersion prepared in the step (2) into a high-speed mixer at a speed of 2 mL/s in a stirring state at a rotating speed of 500 rpm, and then stirring for 3 hours at 600 rpm;
(4) and (4) placing the composite slurry prepared in the step (3) into a ball milling tank for ball milling, and sieving by using a 100-mesh sieve to prepare the silver paste.
Printing silver paste on a 125 mm multiplied by 125 mm Si substrate by adopting a screen printer, drying at 150 ℃, rapidly firing an electrode lead at 800 ℃, sintering at high temperature to obtain the electrode lead with silvery white surface, smoothness, no defects, 8N/cm of peel strength, good soldering performance and less than 10 Siemens/sq of sheet resistance, wherein the photoelectric conversion efficiency of the prepared solar cell is 19.2%, and the tensile force test result shows that the adhesive force is more than 10N/mm2。
The technical solutions provided by the present invention are described in detail above, and for those skilled in the art, the ideas according to the embodiments of the present invention may be changed in the specific implementation manners and the application ranges, and in summary, the content of the present description should not be construed as limiting the present invention.
Claims (5)
1. A preparation method of a crystalline silicon photovoltaic cell front electrode silver paste is characterized by comprising the following steps:
(1) preparing 50-100 parts of silver powder with the average particle size of less than or equal to 200 nm;
(2) weighing 15-30 parts of SnO2、SiO2、TiO2、Nb2O5、ZnO2Ultrasonically dispersing the formed glass powder in an absolute ethyl alcohol solvent to prepare glass dispersion liquid; wherein the glass powder comprises SnO in parts by weight215 to 18 parts of SiO2 17 to 23 parts of TiO216 to 19 parts by weight of Nb2O5 15 to 22 parts of ZnO2 16-26 parts;
(3) adding 15-30 parts of ethylenediamine tetramethylene phosphoric acid into a high-speed mixer, firstly adding 1-2 parts of methylpentanol and 2-5 parts of anti-settling agent under the stirring state at the rotating speed of 400-800 rpm, then slowly adding the silver powder prepared in the step (1), and stirring for 1-5 hours at 800-1000 rpm; adding the glass dispersion liquid prepared in the step (2) into a high-speed mixer at a speed of 1-3 mL/s under a stirring state with a rotating speed of 400-800 rpm, and then stirring for 1-5 h at 500-700 rpm;
(4) and (4) placing the composite slurry prepared in the step (3) into a ball milling tank for ball milling, and sieving by using a 100-mesh sieve to prepare the silver paste.
2. The method for preparing the crystalline silicon photovoltaic cell front electrode silver paste as claimed in claim 1, wherein the step (1) is specifically as follows: silver nitrate is used as a silver source, ethylene glycol is used as a solvent and a reducing agent, and polyacrylic acid is used as a surfactant, so that the silver powder with the average particle size of less than or equal to 200 nm is prepared.
3. The method for preparing the crystalline silicon photovoltaic cell front electrode silver paste as claimed in claim 1, wherein in the step (2), the glass powder is SnO with average particle size of less than or equal to 500 nm2、SiO2、TiO2、Nb2O5、ZnO2And (4) forming.
4. The method for preparing the crystalline silicon photovoltaic cell front electrode silver paste as claimed in claim 1, wherein the anti-settling agent in the step (3) is sodium silicate.
5. The method for preparing the crystalline silicon photovoltaic cell front electrode silver paste as claimed in claim 1, wherein the atmosphere of the composite paste prepared in the step (4) is nitrogen gas in a ball milling manner.
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