CN113279059A - Novel polycrystalline silicon ingot casting device and ingot casting method thereof - Google Patents
Novel polycrystalline silicon ingot casting device and ingot casting method thereof Download PDFInfo
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- CN113279059A CN113279059A CN202011043384.7A CN202011043384A CN113279059A CN 113279059 A CN113279059 A CN 113279059A CN 202011043384 A CN202011043384 A CN 202011043384A CN 113279059 A CN113279059 A CN 113279059A
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- 238000005266 casting Methods 0.000 title claims abstract description 54
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 44
- 238000000034 method Methods 0.000 title claims abstract description 29
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 50
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 25
- 239000010703 silicon Substances 0.000 claims abstract description 25
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 22
- 238000009413 insulation Methods 0.000 claims description 55
- 239000010453 quartz Substances 0.000 claims description 36
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 36
- 230000004888 barrier function Effects 0.000 claims description 31
- 238000006243 chemical reaction Methods 0.000 claims description 24
- 239000007789 gas Substances 0.000 claims description 22
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 16
- 229910002804 graphite Inorganic materials 0.000 claims description 16
- 239000010439 graphite Substances 0.000 claims description 16
- 238000007711 solidification Methods 0.000 claims description 12
- 230000008023 solidification Effects 0.000 claims description 12
- 239000002994 raw material Substances 0.000 claims description 9
- 238000002844 melting Methods 0.000 claims description 8
- 230000008018 melting Effects 0.000 claims description 8
- 238000002425 crystallisation Methods 0.000 claims description 7
- 230000008025 crystallization Effects 0.000 claims description 7
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 7
- 238000004321 preservation Methods 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 6
- 229920005591 polysilicon Polymers 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 5
- 238000001914 filtration Methods 0.000 claims description 4
- 238000007599 discharging Methods 0.000 claims description 3
- 239000007788 liquid Substances 0.000 abstract description 15
- 230000001681 protective effect Effects 0.000 abstract description 6
- 239000012535 impurity Substances 0.000 description 5
- 238000005204 segregation Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000002829 nitrogen Chemical class 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
Abstract
The invention discloses a novel polycrystalline silicon ingot casting device and an ingot casting method thereof, wherein the novel polycrystalline silicon ingot casting device comprises an outer furnace, the outer furnace comprises a top cover, a middle furnace body is fixedly arranged at the bottom of the top cover, a bottom cover is fixedly arranged at the bottom of the middle furnace body, an unloading opening is fixedly arranged at the top of the top cover, connecting columns are respectively and fixedly arranged on two sides of the unloading opening, a vacuum device is fixedly arranged on one side of the middle furnace body, a nitrogen conveying device is fixedly arranged on the other side of the middle furnace body, and a controller is fixedly arranged on one side, close to the nitrogen conveying device, of each supporting column. The novel polycrystalline silicon ingot casting device and the ingot casting method thereof have the advantages that the structure is simple and reasonable, the design is novel, the top cover, the middle furnace body and the bottom cover are arranged in a three-section mode through the outer furnace, the purpose that the device is convenient to transport and install in the early stage is achieved, meanwhile, the device is convenient to heat polycrystalline silicon in the later stage, through the arrangement of the protective seat and the silicon collecting tank, the silicon liquid avoiding high temperature is prevented from contacting the furnace body, the safety of the device is guaranteed, and meanwhile, the excessive silicon liquid is concentrated and recovered.
Description
Technical Field
The invention relates to the technical field of polycrystalline silicon processing devices, in particular to a novel polycrystalline silicon ingot casting device and an ingot casting method thereof.
Background
The power generation efficiency of polycrystalline silicon solar cells and single crystal silicon solar cells requires silicon to have high purity. In the process of purifying the silicon raw material, the directional solidification purification belongs to a key and indispensable link, in the solidification process, the silicon liquid at the bottom end of a crucible firstly starts to solidify to reach segregation balance, impurities with small segregation coefficient continuously diffuse and separate from the solidified silicon into the liquid state and gather in the liquid state, in order to reach the segregation balance, the impurities with small segregation coefficient continuously diffuse and separate from the solidified silicon into the liquid state and gather in the liquid state, along with the continuous solidification, the concentration of metal impurities in the liquid state is higher and higher, and finally the impurities are solidified at the top end of an ingot, and after the solidification is finished, the temperature is kept for a period of time at higher temperature, so that all the components are fully diffused to reach the segregation balance, and finally, one end with higher content of the metal impurities is cut off to obtain the purified crystal silicon ingot.
In the actual production process, when the existing majority of polycrystalline silicon ingot casting devices melt polycrystalline silicon, high-temperature silicon liquid overflows into a heat field along with cracks of a crucible, so that silicon leakage accidents are caused. In recent years, in order to increase the feeding weight of polycrystalline silicon ingots, domestic enterprises upgrade the original thermal field with the size of G5 to the thermal field with the size of G6, and the feeding weight can be increased from 450KG to 800 KG. Along with the great increase of the material feeding amount, the harm caused by silicon liquid overflow is multiplied, because the condition that a large amount of fused silicon liquid is intensively sprayed out easily occurs during overflow, and once the high-temperature silicon liquid contacts a stainless steel furnace body, the high-temperature silicon liquid can be easily fused through the inner wall of the stainless steel furnace body, so that safety accidents are caused, and a large amount of resources are wasted. Therefore, the novel polycrystalline silicon ingot casting device and the ingot casting method thereof are provided.
Disclosure of Invention
In order to solve the technical problems, the invention provides the following technical scheme:
the invention discloses a novel polycrystalline silicon ingot casting device and an ingot casting method thereof, wherein the novel polycrystalline silicon ingot casting device comprises the following steps:
the outer furnace comprises a top cover, a middle furnace body is fixedly arranged at the bottom of the top cover, a bottom cover is fixedly arranged at the bottom of the middle furnace body, an unloading port is fixedly arranged at the top of the top cover, connecting columns are fixedly arranged on two sides of the unloading port respectively, a vacuum device is fixedly arranged on one side of the middle furnace body, a nitrogen conveying device is fixedly arranged on the other side of the middle furnace body, supporting columns are fixedly arranged on two sides of the bottom of the middle furnace body, a controller is fixedly arranged on one side, close to the nitrogen conveying device, of each supporting column, and a heat insulation cage is fixedly arranged in the outer furnace;
the heat insulation cage, heat insulation cage top fixed mounting has exhaust emission pipe, the inside both sides fixed mounting of heat insulation cage has auxiliary heater, inside and two of heat insulation cage fixed mounting has quartz crucible between the auxiliary heater, quartz crucible bottom fixed mounting has the heater conversion platform, heater conversion platform bottom fixed mounting has silicon collecting tank, silicon collecting tank bottom fixed mounting has the objective table, objective table bottom fixed mounting has the graphite stand.
As a preferred technical scheme of the invention, the top of the unloading port is fixedly provided with an unloading cover, the unloading cover is fixedly arranged at the top of the unloading port box body through a hinge, the unloading port penetrates through the top cover and extends to the middle furnace body, and the two connecting columns penetrate through the top cover and extend to the middle furnace body and are fixedly connected with the top of the heat insulation cage.
As a preferred technical scheme of the invention, the vacuum device comprises an outer box body, a vacuum pump is fixedly arranged in the outer box body, an exhaust pipe is fixedly arranged at the top of the vacuum pump, the exhaust pipe penetrates through the outer box body and the middle furnace body and extends into the middle furnace body, and a filter is fixedly arranged in the outer box body.
As a preferred technical scheme, the nitrogen conveying device comprises a shell, a conveying pump is fixedly installed in the shell, a conveying pipe is fixedly installed at the top of the conveying pump, the conveying pipe penetrates through the shell and the middle furnace body and extends into the middle furnace body, a gas storage sensor is fixedly installed in the shell, and the gas storage sensor is electrically connected with a controller.
In a preferred embodiment of the present invention, the heat insulation cage includes an upper heat insulation barrier and a lower heat insulation barrier, the upper heat insulation barrier is fixedly connected to the top of the lower heat insulation barrier by screws, the screws are fixedly installed at four corners of the upper heat insulation barrier, two exhaust gas discharge pipes are fixedly installed, and the two exhaust gas discharge pipes are symmetrically installed on the top of the upper heat insulation barrier.
As a preferable technical scheme of the present invention, four quartz crucibles are fixedly arranged, the four quartz crucibles are standard kilogram quartz crucibles, the four quartz crucibles are fixedly mounted on the top of a heater conversion table, the top of the heater conversion table is fixedly provided with a placing groove, and the quartz crucibles correspond to the placing grooves one to one.
As a preferred technical scheme of the invention, the heater conversion table comprises a heater and a protective seat, the bottom of the heater is fixedly provided with the protective seat, the protective seat is in a quadrangular frustum pyramid shape, the surface of the heater is fixedly provided with a diversion trench, and the diversion trench is fixedly connected with the surface of the protective seat.
As a preferred technical solution of the present invention, two graphite pillars are fixedly disposed, the two graphite pillars are symmetrically mounted at the bottom of the stage, the two graphite pillars extend through the lower heat insulation barrier to the inside of the bottom cover, and the graphite pillars are quadrangular.
A novel polycrystalline silicon ingot casting device and an ingot casting method thereof comprise the following steps:
s1, opening the bottom cover and the lower heat insulation barrier, adding the processed polycrystalline silicon raw material into the quartz crucible, closing the bottom cover and the lower heat insulation barrier, and starting the device through the controller;
s2, starting the vacuum device through the controller, starting a vacuum pump in the vacuum device, extracting gas in the device through an exhaust pipe by the vacuum pump, preliminarily filtering the extracted gas through a filter, and exhausting the filtered gas into an outer box through the vacuum pump;
s3, starting the nitrogen conveying device by the controller under the vacuum state in the device, conveying nitrogen in the shell into the device by a conveying pump in the nitrogen conveying device through a conveying pipe, and stopping the conveying pump after conveying specified nitrogen content;
s4, starting the auxiliary heater and the heater conversion table by the controller, continuously increasing the temperature inside the heat insulation cage, melting the instead-processed polycrystalline silicon raw material inside the quartz crucible after the temperature inside the heat insulation cage reaches a fixed temperature, continuing for 5 to 10 hours, entering a heat preservation stage after the melting stage is completed, preserving the temperature inside the device for 2 to 5 hours, entering a directional solidification crystallization stage after the heat preservation stage is completed, gradually cooling the heater of the heating conversion table for 15 to 60 hours, further reducing the temperature inside the device after the directional solidification crystallization stage is completed, and opening the bottom cover and the lower heat insulation barrier to take out the quartz crucible after cooling for a period of time.
The invention has the beneficial effects that: this kind of novel polycrystalline silicon ingot casting device and ingot casting method thereof, there is the top cap through outer stove, middle part furnace body and bottom syllogic are set up, reach the device purpose of being convenient for transportation and installation earlier stage, be convenient for the device later stage simultaneously when heating polycrystalline silicon, in time carry out the off-load when too big, through the setting of protection seat and silicon catch basin, reach the silicon liquid contact furnace body of avoiding the high temperature, guarantee the security of device, also concentrate the recovery to excessive silicon liquid simultaneously, promote the utilization ratio of resource, setting through auxiliary heater, reach the all-round heating to quartz crucible, accelerate the speed of melting of polycrystalline silicon, shorten the process time of device.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
FIG. 1 is a perspective view of a novel polysilicon ingot casting device and an ingot casting method thereof;
FIG. 2 is a schematic diagram of the internal structure of a nitrogen conveying device of the novel polycrystalline silicon ingot casting device and the ingot casting method thereof;
FIG. 3 is an exploded view of a heater conversion table of the novel polysilicon ingot casting device and the ingot casting method thereof;
FIG. 4 is a schematic structural diagram of a heat insulation cage of the novel polycrystalline silicon ingot casting device and the ingot casting method thereof.
In the figure: 1. an outer furnace; 2. a top cover; 3. a middle furnace body; 4. a bottom cover; 5. an unloading port; 6. connecting columns; 7. a vacuum device; 8. a nitrogen gas conveying device; 9. a support pillar; 10. a controller; 11. a heat insulation cage; 12. an exhaust gas discharge pipe; 13. an auxiliary heater; 14. a quartz crucible; 15. a heater converting station; 16. a silicon collecting pool; 17. an object stage; 18. a graphite upright post; 19. an unloading cover; 20. an outer case; 21. a vacuum pump; 22. an air exhaust pipe; 23. a filter; 24. a housing; 25. a delivery pump; 26. a delivery pipe; 27. a gas reserve sensor; 28. an upper thermal barrier; 29. a lower thermal barrier; 30. a screw; 31. a heater; 32. a protective seat.
Detailed Description
In order to make the technical means, the creation characteristics, the achievement purposes and the effects of the invention easy to understand, the invention is further described with the specific embodiments.
Example (b): as shown in fig. 1 to 4, the novel polycrystalline silicon ingot casting device and the ingot casting method thereof of the present invention include:
the device comprises an outer furnace 1, wherein the outer furnace 1 comprises a top cover 2, a middle furnace body 3 is fixedly arranged at the bottom of the top cover 2, a bottom cover 4 is fixedly arranged at the bottom of the middle furnace body 3, an unloading port 5 is fixedly arranged at the top of the top cover 2, connecting columns 6 are respectively and fixedly arranged on two sides of the unloading port 5, a vacuum device 7 is fixedly arranged on one side of the middle furnace body 3, a nitrogen conveying device 8 is fixedly arranged on the other side of the middle furnace body 3, supporting columns 9 are fixedly arranged on two sides of the bottom of the middle furnace body 3, a controller 10 is fixedly arranged on one side, close to the nitrogen conveying device 8, of each supporting column 9, and a heat insulation cage 11 is fixedly arranged in the outer furnace 1;
thermal-insulated cage 11, thermal-insulated cage 11 top fixed mounting has exhaust emission pipe 12, the inside both sides fixed mounting of thermal-insulated cage 11 has auxiliary heater 13, thermal-insulated cage 11 is inside and two fixed mounting has quartz crucible 14 between the auxiliary heater 13, 14 bottom fixed mounting of quartz crucible has heater conversion platform 15, 15 bottom fixed mounting of heater conversion platform has silicon pond 16 that gathers, 16 bottom fixed mounting in silicon pond that gathers has objective table 17, objective table 17 bottom fixed mounting has graphite stand 18.
The unloading opening 5 is fixedly provided with an unloading cover 19 at the top, the unloading cover 19 is fixedly arranged at the top of the unloading opening 5 box body through a hinge, the unloading opening 5 penetrates through the top cover 2 and extends to the middle furnace body 3, and the two connecting columns 6 penetrate through the top cover 2 and extend to the middle furnace body 3 and are fixedly connected with the top of the heat insulation cage 11.
Wherein, vacuum apparatus 7 includes outer box 20, the inside fixed mounting of outer box 20 has vacuum pump 21, vacuum pump 21 top fixed mounting has exhaust tube 22, exhaust tube 22 runs through outer box 20 and middle furnace body 3, and extends to inside middle part furnace body 3, exhaust tube 22 has filter 23 at the inside fixed mounting of outer box 20.
Wherein, nitrogen gas conveyor 8 includes casing 24, the inside fixed mounting of casing 24 has delivery pump 25, delivery pump 25 top fixed mounting has conveyer pipe 26, conveyer pipe 26 runs through casing 24 and middle furnace body 3, and extends to inside the furnace body 3 of middle part, the inside fixed mounting of casing 24 has gaseous reserves inductor 27, gaseous reserves inductor 27 and controller 10 electric connection.
Wherein, the thermal insulation cage 11 comprises an upper thermal insulation barrier 28 and a lower thermal insulation barrier 29, the upper thermal insulation barrier 28 is fixedly connected to the top of the lower thermal insulation barrier 29 through screws 30, the screws 30 are fixedly installed at four corners of the upper thermal insulation barrier 28, two exhaust gas discharge pipes 12 are fixedly arranged, and the two exhaust gas discharge pipes 12 are symmetrically installed at the top of the upper thermal insulation barrier 28.
The number of the quartz crucibles 14 is four, the four quartz crucibles 14 are standard 450kg quartz crucibles 14, the four quartz crucibles 14 are fixedly mounted on the top of the heater conversion table 15, the top of the heater conversion table 15 is fixedly provided with a placing groove, and the quartz crucibles 14 correspond to the placing grooves one to one.
The heater conversion table 15 comprises a heater 31 and a protection seat 32, the protection seat 32 is fixedly mounted at the bottom of the heater 31, the protection seat 32 is in a quadrangular frustum pyramid shape, a diversion trench is fixedly arranged on the surface of the heater 31, and the diversion trench is fixedly connected with the surface of the protection seat 32.
Two graphite columns 18 are fixedly arranged, the two graphite columns 18 are symmetrically installed at the bottom of the object stage 17, the two graphite columns 18 penetrate through the lower heat insulation barrier 29 and extend into the bottom cover 4, and the graphite columns 18 are quadrangular.
A novel polycrystalline silicon ingot casting device and an ingot casting method thereof comprise the following steps:
s1, firstly opening the bottom cover 4 and the lower heat insulation screen 29, adding the polysilicon raw material to be processed into the quartz crucible 14, then closing the bottom cover 4 and the lower heat insulation screen 29, and starting the device through the controller 10;
s2, starting the vacuum device 7 through the controller 10, starting the vacuum pump 21 in the vacuum device 7 to work, extracting the gas in the device through the exhaust tube 22 by the vacuum pump 21, primarily filtering the extracted gas through the filter 23, and discharging the filtered gas into the outer box 20 through the vacuum pump 21;
s3, under the vacuum state in the device, the controller 10 starts the nitrogen gas conveying device 8, the conveying pump 25 in the nitrogen gas conveying device 8 conveys the nitrogen gas in the shell 24 to the device through the conveying pipe 26, and after the specified nitrogen gas content is conveyed, the conveying pump 25 stops working;
s4, starting the auxiliary heater 13 and the heater conversion table 15 by the controller 10, continuously increasing the temperature inside the heat insulation cage 11, melting the instead-processed polycrystalline silicon raw material inside the quartz crucible 14 after the temperature inside the heat insulation cage 11 reaches a fixed temperature, continuing for 5 to 10 hours, entering a heat preservation stage after the melting stage is finished, preserving the temperature inside the device for 2 to 5 hours, entering a directional solidification crystallization stage after the heat preservation stage is finished, gradually cooling the heater 31 of the heating conversion table 15 for 15 to 60 hours, further reducing the temperature inside the device after the directional solidification crystallization stage is finished, and opening the bottom cover 4 and the lower heat insulation barrier 29 to take out the quartz crucible 14 after cooling for a period of time.
During operation, the novel polycrystalline silicon ingot casting device and the ingot casting method thereof are characterized in that firstly, the bottom cover 4 and the lower heat insulation barrier 29 are opened, the polycrystalline silicon raw material for substitute processing is added into the quartz crucible 14, then the bottom cover 4 and the lower heat insulation barrier 29 are closed, and the device is started through the controller 10; starting the vacuum device 7 through the controller 10, starting a vacuum pump 21 inside the vacuum device 7, extracting gas inside the device through an exhaust pipe 22 by the vacuum pump 21, primarily filtering the extracted gas through a filter 23, and discharging the filtered gas into the outer box 20 through the vacuum pump 21; the controller 10 starts the nitrogen conveying device 8 under the vacuum state in the device, a conveying pump 25 in the nitrogen conveying device 8 conveys the nitrogen in the shell 24 to the device through a conveying pipe 26, and after the specified nitrogen content is conveyed, the conveying pump 25 stops working; the controller 10 starts the auxiliary heater 13 and the heater conversion table 15, the temperature inside the heat insulation cage 11 continuously rises, after the temperature inside the heat insulation cage 11 reaches a fixed temperature, the polycrystalline silicon raw material for substitute processing inside the quartz crucible 14 is melted and lasts for 5 to 10 hours, after the melting stage is completed, the temperature inside the device is kept for 2 to 5 hours, after the heat preservation stage is completed, the directional solidification and crystallization stage is entered, the heater 31 for heating the conversion table 15 starts to gradually cool and keeps for 15 to 60 hours, after the directional solidification and crystallization stage is completed, the temperature inside the device is further lowered, after the bottom cover 4 and the lower heat insulation barrier 29 are opened for a period of time, and the quartz crucible 14 is taken out.
Although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that changes may be made in the embodiments and/or equivalents thereof without departing from the spirit and scope of the invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (9)
1. A novel polycrystalline silicon ingot casting device and an ingot casting method thereof are characterized by comprising the following steps:
the outer furnace (1) comprises a top cover (2), a middle furnace body (3) is fixedly installed at the bottom of the top cover (2), a bottom cover (4) is fixedly installed at the bottom of the middle furnace body (3), an unloading port (5) is fixedly installed at the top of the top cover (2), connecting columns (6) are respectively and fixedly installed on two sides of the unloading port (5), a vacuum device (7) is fixedly installed on one side of the middle furnace body (3), a nitrogen conveying device (8) is fixedly installed on the other side of the middle furnace body (3), supporting columns (9) are fixedly installed on two sides of the bottom of the middle furnace body (3), a controller (10) is fixedly installed on one side close to the nitrogen conveying device (8) by the supporting columns (9), and a heat insulation cage (11) is fixedly installed inside the outer furnace;
thermal-insulated cage (11), thermal-insulated cage (11) top fixed mounting has exhaust emission pipe (12), the inside both sides fixed mounting of thermal-insulated cage (11) has auxiliary heater (13), thermal-insulated cage (11) is inside and two fixed mounting has quartz crucible (14) between auxiliary heater (13), quartz crucible (14) bottom fixed mounting has heater conversion platform (15), heater conversion platform (15) bottom fixed mounting has silicon collecting tank (16), silicon collecting tank (16) bottom fixed mounting has objective table (17), objective table (17) bottom fixed mounting has graphite stand (18).
2. The novel polycrystalline silicon ingot casting device and the ingot casting method thereof according to claim 1 are characterized in that:
unloading port (5) top fixed mounting has unloading lid (19), unloading lid (19) pass through hinge fixed mounting at unloading port (5) box top, unloading port (5) run through top cap (2), extend to middle part furnace body (3), two spliced pole (6) run through top cap (2) and extend to middle part furnace body (3), and with thermal-insulated cage (11) top fixed connection.
3. The novel polycrystalline silicon ingot casting device and the ingot casting method thereof according to claim 1 are characterized in that:
vacuum device (7) include outer box (20), outer box (20) inside fixed mounting has vacuum pump (21), vacuum pump (21) top fixed mounting has exhaust tube (22), exhaust tube (22) run through outer box (20) and middle part furnace body (3), and extend to inside middle part furnace body (3), exhaust tube (22) box (20) inside fixed mounting has filter (23) outside.
4. The novel polycrystalline silicon ingot casting device and the ingot casting method thereof according to claim 1 are characterized in that:
nitrogen gas conveyor (8) include casing (24), the inside fixed mounting of casing (24) has delivery pump (25), delivery pump (25) top fixed mounting has conveyer pipe (26), conveyer pipe (26) run through casing (24) and middle part furnace body (3), and extend to inside middle part furnace body (3), the inside fixed mounting of casing (24) has gaseous reserves inductor (27), gaseous reserves inductor (27) and controller (10) electric connection.
5. The novel polycrystalline silicon ingot casting device and the ingot casting method thereof according to claim 1 are characterized in that:
the heat insulation cage (11) comprises an upper heat insulation barrier (28) and a lower heat insulation barrier (29), the upper heat insulation barrier (28) is fixedly connected to the top of the lower heat insulation barrier (29) through screws (30), the screws (30) are fixedly installed at four corners of the upper heat insulation barrier (28), two exhaust gas discharge pipes (12) are fixedly arranged, and the two exhaust gas discharge pipes (12) are symmetrically installed at the top of the upper heat insulation barrier (28).
6. The novel polycrystalline silicon ingot casting device and the ingot casting method thereof according to claim 1 are characterized in that:
the quartz crucible (14) is fixedly provided with four quartz crucibles (14), the four quartz crucibles (14) are standard 450kg quartz crucibles (14), the four quartz crucibles (14) are fixedly installed at the top of the heater conversion table (15), a placing groove is fixedly formed in the top of the heater conversion table (15), and the quartz crucibles (14) correspond to the placing grooves one to one.
7. The novel polycrystalline silicon ingot casting device and the ingot casting method thereof according to claim 1 are characterized in that:
the heater conversion table (15) comprises a heater (31) and a protection seat (32), wherein the protection seat (32) is fixedly installed at the bottom of the heater (31), the protection seat (32) is in a quadrangular frustum pyramid shape, a diversion trench is fixedly arranged on the surface of the heater (31), and the diversion trench is fixedly connected with the surface of the protection seat (32).
8. The novel polycrystalline silicon ingot casting device and the ingot casting method thereof according to claim 1 are characterized in that:
the two graphite columns (18) are fixedly arranged, the two graphite columns (18) are symmetrically arranged at the bottom of the object stage (17), the two graphite columns (18) penetrate through the lower heat insulation barrier (29) and extend into the bottom cover (4), and the graphite columns (18) are quadrangular.
9. The novel polysilicon ingot casting device and the ingot casting method thereof according to claim 1, the novel polysilicon ingot casting device of the above claims 1 to 8, characterized in that:
the method comprises the following steps:
s1, firstly opening the bottom cover (4) and the lower heat insulation screen (29), adding the polysilicon raw material to be processed into the quartz crucible (14), then closing the bottom cover (4) and the lower heat insulation screen (29), and starting the device through the controller (10);
s2, starting a vacuum device (7) through a controller (10), starting a vacuum pump (21) inside the vacuum device (7) to work, extracting gas inside the device through an exhaust pipe (22) by the vacuum pump (21), preliminarily filtering the extracted gas through a filter (23), and discharging the filtered gas into an outer box body (20) through the vacuum pump (21);
s3, starting the nitrogen conveying device (8) by the controller (10) under the vacuum state in the device, conveying nitrogen in the shell (24) into the device by the conveying pump (25) in the nitrogen conveying device (8) through the conveying pipe (26), and stopping the conveying pump (25) after conveying the specified nitrogen content;
s4, starting the auxiliary heater (13) and the heater conversion table 15 by the controller (10), continuously increasing the temperature inside the heat insulation cage (11), melting the instead-processed polycrystalline silicon raw material inside the quartz crucible (14) after the temperature inside the heat insulation cage (11) reaches a fixed temperature, continuing for 5 to 10 hours, entering a heat preservation stage after the melting stage is completed, preserving the temperature inside the device for 2 to 5 hours, entering a directional solidification crystallization stage after the heat preservation stage is finished, gradually reducing the temperature of the heater (31) of the heating conversion table (15), keeping for 15 to 60 hours, further reducing the temperature inside the device after the directional solidification stage is finished, and opening the bottom cover (4) and the lower heat insulation barrier (29) to take out the quartz crucible (14) after cooling for a period.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011043384.7A CN113279059A (en) | 2020-09-28 | 2020-09-28 | Novel polycrystalline silicon ingot casting device and ingot casting method thereof |
Applications Claiming Priority (1)
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Application publication date: 20210820 |