CN113278921B - High-thickness curved surface DLC product and preparation method and application thereof - Google Patents
High-thickness curved surface DLC product and preparation method and application thereof Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0005—Separation of the coating from the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/028—Physical treatment to alter the texture of the substrate surface, e.g. grinding, polishing
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5873—Removal of material
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/02—Etching
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F21/00—Constructions of heat-exchange apparatus characterised by the selection of particular materials
- F28F21/02—Constructions of heat-exchange apparatus characterised by the selection of particular materials of carbon, e.g. graphite
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F21/00—Constructions of heat-exchange apparatus characterised by the selection of particular materials
- F28F21/08—Constructions of heat-exchange apparatus characterised by the selection of particular materials of metal
- F28F21/081—Heat exchange elements made from metals or metal alloys
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Abstract
The invention discloses a high-thickness curved DLC product and a preparation method and application thereof, wherein the preparation method comprises the following steps of S1, placing a substrate in a PVD furnace, starting a graphite target source and an ion source power supply, and applying a deposition bias voltage of-10 to-100V, wherein the bias voltage is increased in a gradient manner; regulating the current to decrease from 10-3A gradient; the deposition time is 50-90 h, and a DLC layer containing the substrate is obtained; s2, corroding the product obtained in the step S1 to remove the substrate, and thus obtaining the high-thickness curved DLC product. The high-thickness curved surface DLC product has no cracking and falling phenomenon.
Description
Technical Field
The invention relates to the technical field of DLC (diamond-like carbon), in particular to a DLC product with a high-thickness curved surface and a preparation method and application thereof.
Background
Heat exchangers are of great importance for industrial applications, and heat-conducting components of heat exchangers are usually made of copper alloys. Compared with copper alloy, the thermal conductivity is 6 times that of copper, so that diamond has excellent thermal conductivity efficiency as a heat exchanger component material. Nevertheless, diamond is hard and brittle, difficult to shape, and extremely difficult to manufacture into diamond heat exchangers.
At present, a PVD (physical vapor deposition) technology is used for depositing a diamond-like carbon film (DLC), which has high hardness and heat conductivity coefficient, and is widely used for some antifriction materials such as automobile parts and components, and is also an ideal material for ideal heat exchange components, but the PVD technology can only prepare the DLC at present, the thickness of the film is generally between several microns and dozens of microns, and DLC with larger thickness cannot be directly prepared, because the difficulty in preparing ultra-thick DLC is higher, the thicker DLC is, the larger the internal stress (up to 10GPa) is, and further, if a product with a curved DLC shape is to be prepared, the internal stress can be further increased, so that the DLC can be cracked and peeled off due to high stress action. For example, chinese patent (CN108070857A) discloses an ultra-thick DLC coating, but it can only be 50 μm thick at most, and is also planar in structure.
Disclosure of Invention
The invention provides a preparation method of a high-thickness curved DLC product, aiming at overcoming the defect that the high-thickness curved DLC product cannot be prepared.
It is another object of the present invention to provide such a high thickness curved DLC article.
It is another object of the present invention to provide a use of the DLC article.
In order to achieve the purpose, the invention adopts the technical scheme that:
a preparation method of a high-thickness curved DLC product comprises the following steps:
s1, placing a substrate in a PVD furnace, starting a graphite target source and an ion source power supply, and applying a deposition bias voltage of-10 to-100V, wherein the bias voltage increases in a gradient manner; regulating the current to decrease from 10-3A gradient; the deposition time is 50-90 h, and a DLC layer containing the substrate is obtained;
s2, corroding the product obtained in the step S1 to remove the substrate, and thus obtaining the high-thickness curved DLC product.
At present, in the prior art, a PVD (physical vapor deposition) technology can be adopted to prepare a DLC film layer with the thickness of several microns to dozens of microns, and the internal stress of the DLC film layer is larger along with the increase of the thickness, so that the DLC film layer is easy to crack and fall off. Particularly, in the DLC to be formed into a curved surface, the internal stress is larger than that of a planar film, and cracking is more likely to occur. The inventor finds through a large number of experiments that the internal stress can be greatly reduced by adjusting the negative bias, the current and the time, and the deposition bias of-10V to-100V is applied, and the bias increases in a gradient manner; the deposition time is 50-90 h; the adjusting current is reduced from a gradient of 10-3A, low bias voltage and large current are regulated and controlled in the early stage, so that the initial stress in the DLC layer is relatively small, the adhesion degree is high, the deposition rate is guaranteed, the DLC layer is prevented from cracking due to high adhesion degree, and finally, the substrate is removed, so that the high-thickness curved DLC product can be obtained.
Preferably, in the step S2, the deposition is carried out for 15-20 h under the condition of-10 to-20V and 8-10A; depositing for 6-10 h under the condition of-25 to-50V and 5-7A, and depositing for 1-4 h under the condition of-60 to-100V and 1-4A.
The preparation method is suitable for a planar substrate and a substrate with a curved surface, such as a tubular or rod-shaped substrate.
Preferably, the substrate is a polymer substrate or a metal alloy substrate.
More preferably, the metal alloy substrate includes, but is not limited to, steel, copper alloys, and aluminum alloys.
Preferably, the high-thickness curved DLC product is a DLC pipe, and the substrate is a metal alloy pipe or a metal alloy rod.
The high-thickness curved DLC product comprises but is not limited to DLC pipes, and can also be DLC products with other special-shaped structures.
The DLC pipe with the thickness of more than or equal to 250 mu m can be obtained by the preparation method, and the phenomena of cracking and the like do not occur.
The DLC pipe thickness has a large influence on internal stress, and is preferably less than or equal to 2000 mu m.
The corrosion is one of chemical corrosion or electrochemical corrosion.
The substrate is also subjected to a cleaning process before being placed in the PVD furnace, and preferably, the substrate surface is subjected to a sand blasting, a rust removing and an oil removing process in step S1.
As one possible embodiment, it is preferable that in step S1, the deposition is performed for 20h under the condition of-10V, 10A; depositing for 15h under the conditions of-20V and 9A; depositing for 10 hours under the conditions of-25V and 8A; depositing for 8 hours under the conditions of-30V and 6A; depositing for 6h under the condition of-50V and 5A; depositing for 4h under the condition of-60V and 4A; depositing for 2h under the condition of-80V and 3A; the deposition is carried out for 1h under the conditions of-100V and 3A.
The inventors have found that a uniform distribution of the graphite target source around the substrate results in a uniform DLC layer and an increased deposition rate. Preferably, the plurality of graphite target sources are uniformly distributed around the substrate at equal distances in step S1.
Preferably, the etching in step S2 is electrochemical etching performed by immersing the substrate including the DLC layer in a solution of hydrochloric acid and sodium chloride as an anode.
Preferably, the voltage of the electrolytic corrosion is 40-60V, and the current is 10-20A.
Preferably, the temperature of the electrolytic corrosion is 50-70 ℃.
A high-thickness curved DLC product prepared by any one of the above methods.
The application of the DLC product in preparing heat exchanger and radiator products.
The heat exchanger and radiator products prepared from the DLC product have strong plasticity and high heat conductivity.
Compared with the prior art, the invention has the beneficial effects that:
the invention provides a preparation method of a high-thickness curved DLC product, which can greatly reduce the internal stress by adjusting the deposition negative bias, current and time, and apply the deposition bias of-10 to-100V, wherein the bias increases in a gradient manner; the deposition time is reduced from 20 to 1h in a gradient manner; the adjusting current is reduced from a gradient of 10-3A, and low bias voltage and large current are regulated and controlled in the early stage, so that the initial DLC layer has small internal stress and high adhesion degree, the deposition rate is guaranteed, the DLC layers can be prevented from cracking due to high adhesion degree, and a high-thickness curved surface DLC product can be obtained.
Drawings
FIG. 1 is a diagram of a DLC pipe prepared in example 1;
FIG. 2 is a diagram of a DLC pipe produced in comparative example 1.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below, but the embodiments of the present invention are not limited thereto.
The reagents, methods and equipment adopted by the invention are conventional in the technical field if no special description is given.
Example 1
S1, cleaning the metal pipe or metalPlacing the rod in a PVD furnace, sealing and vacuumizing to 1 × 10-3Pa; starting a graphite target source and an ion source power supply, applying negative bias, and depositing for 20h at-10V and 10A; 20V, 9A deposition for 15 h; 25V, 8A deposition for 10 h; 30V, 6A deposition for 8 h; 50V, 5A deposition for 6 h; 60V, 4A deposition for 4 h; 80V, 3A deposition for 2 h; 100V, 3A deposition for 1 h; a metal pipe having a DLC layer or a metal rod having a DLC layer is obtained.
S2, performing electrolytic corrosion on the product obtained in the step S2 until the metal pipe or the metal rod is completely corroded, and obtaining the DLC pipe; the current is 10A, the corrosion temperature is 65 ℃, and the corrosion solution is formed by mixing 10 vol.% of NaCl solution. The thickness of the resulting DLC tube was 880. mu.m. It can be seen from fig. 1 that the DLC tube has not cracked.
Example 2
The preparation method of example 2 is the same as that of example 1, except that the deposition bias and the deposition time are adjusted, the substrate is negatively biased-12V for deposition for 21 h; 20V deposition for 15 h; 26V deposition for 10 h; 30V deposition for 8 h; 50V deposition for 6 h; -60V deposition for 4 h; -80V deposition for 2 h; deposition at-100V for 1h to give a DLC tube with a thickness of 480 μm.
Example 3
The preparation method of example 3 is the same as that of example 1, except that the deposition bias and the deposition time are adjusted, the substrate is negatively biased-10V for deposition for 15 h; 15V deposition for 12 h; 20V deposition for 10 h; -30V deposition for 6 h; 50V deposition for 5 h; -60V deposition for 4 h; -80V deposition for 3 h; 100V deposition for 2 h. The DLC tube thickness was 510 μm.
As can be seen from examples 1 to 3, DLC tubes with different thicknesses can be obtained by adjusting different deposition bias voltages and deposition times.
Example 4
The preparation method of example 4 is the same as that of example 1, except that the deposition bias and the deposition time are adjusted, the substrate is deposited with negative bias of-15V for 10 h; 20V deposition for 8 h; -25V deposition for 6 h; 30V deposition for 5 h; 50V deposition for 3 h; -60V deposition for 2 h; 80V deposition for 1 h; 100V deposition for 1 h. The DLC tube thickness was 260 μm.
Comparative example 1
The preparation method is the same as that of example 1, except that the DLC tube was prepared at a constant bias of-60V, a deposition time of 2h, and a current of 10A. As can be seen from fig. 2, a complete DLC pipe could not be obtained, and the DLC coating was peeled off on the metal surface.
It should be understood that the above-described embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the claims of the present invention.
Claims (7)
1. A preparation method of a high-thickness curved DLC product is characterized by comprising the following steps:
s1, placing a substrate in a PVD furnace, starting a graphite target source and an ion source power supply, and applying a deposition bias voltage of-10 to-100V, wherein the bias voltage increases in a gradient manner; regulating the current to decrease from 10-3A gradient; the deposition time is 50-90 h, and a DLC layer containing the substrate is obtained;
s2, corroding the product obtained in the step S1 to remove the substrate, and thus obtaining the high-thickness curved DLC product;
the DLC product is a DLC pipe, and the substrate is a metal alloy pipe or a metal alloy rod;
the DLC pipe has a thickness of 250 to 2000 [ mu ] m.
2. The method for producing a high-thickness curved DLC article as recited in claim 1, wherein the substrate in step S1 is subjected to sand blasting, rust removal and oil removal treatment on the surface of the substrate before being placed in a PVD furnace.
3. The method for producing a high-thickness curved DLC article as recited in claim 1, wherein the deposition is performed in step S1 under the following conditions: depositing for 20 hours under the conditions of-10V and 10A; depositing for 15h under the conditions of-20V and 9A; depositing for 10 hours under the conditions of-25V and 8A; depositing for 8 hours under the conditions of-30V and 6A; depositing for 6h under the condition of-50V and 5A; depositing for 4h under the condition of-60V and 4A; depositing for 2h under the condition of-80V and 3A; the deposition is carried out for 1h under the conditions of-100V and 3A.
4. The method for producing a high thickness curved DLC article as recited in claim 1, wherein said plurality of graphite target sources are uniformly distributed around said substrate at equal distances in step S1.
5. The method for producing a high-thickness curved DLC article as recited in claim 1, wherein said etching is electrochemical etching.
6. A curved DLC product having a high thickness, which is produced by the method according to any one of claims 1 to 5.
7. Use of the DLC article according to claim 6 for the manufacture of heat exchanger, heat sink articles.
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CN202110482494.1A CN113278921B (en) | 2021-04-30 | 2021-04-30 | High-thickness curved surface DLC product and preparation method and application thereof |
NL2031516A NL2031516B1 (en) | 2021-04-30 | 2022-04-06 | High-thickness curved dlc product and preparation method and application thereof |
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CN108070857A (en) * | 2018-02-06 | 2018-05-25 | 苏州涂冠镀膜科技有限公司 | Super thick DLC coatings |
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JP5090389B2 (en) * | 2009-02-26 | 2012-12-05 | オーエスジー株式会社 | DLC coated lure |
CN102808160B (en) * | 2011-06-02 | 2014-07-02 | 深圳富泰宏精密工业有限公司 | Shell and preparation method thereof |
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CN108070857A (en) * | 2018-02-06 | 2018-05-25 | 苏州涂冠镀膜科技有限公司 | Super thick DLC coatings |
Non-Patent Citations (1)
Title |
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"Characterisation of the interface region in stepwise bias-graded layers of DLC films by a high-resolution depth profiling method";C.ziebert,et.al;《thin solid films》;20050101;page63-68 * |
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