CN113254359B - 用于执行存储器内计算的方法和存储器模块 - Google Patents

用于执行存储器内计算的方法和存储器模块

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Publication number
CN113254359B
CN113254359B CN202011228228.8A CN202011228228A CN113254359B CN 113254359 B CN113254359 B CN 113254359B CN 202011228228 A CN202011228228 A CN 202011228228A CN 113254359 B CN113254359 B CN 113254359B
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operand
memory
dram
module
data
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CN202011228228.8A
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CN113254359A (zh
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克里希纳·泰贾·马拉迪
皇甫文沁
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • G06F9/00—Arrangements for program control, e.g. control units
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    • G06F9/30—Arrangements for executing machine instructions, e.g. instruction decode
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    • G06F9/30007—Arrangements for executing specific machine instructions to perform operations on data operands
    • G06F9/3001—Arithmetic instructions
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    • G06F7/523—Multiplying only
    • G06F7/53—Multiplying only in parallel-parallel fashion, i.e. both operands being entered in parallel
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    • G06F7/57—Arithmetic logic units [ALU], i.e. arrangements or devices for performing two or more of the operations covered by groups G06F7/483 – G06F7/556 or for performing logical operations
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    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
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    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
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    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Software Systems (AREA)
  • Computational Mathematics (AREA)
  • Mathematical Analysis (AREA)
  • Mathematical Optimization (AREA)
  • Pure & Applied Mathematics (AREA)
  • Computing Systems (AREA)
  • Human Computer Interaction (AREA)
  • Mathematical Physics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Databases & Information Systems (AREA)
  • Dram (AREA)
  • Memory System (AREA)
  • Executing Machine-Instructions (AREA)
  • Semiconductor Memories (AREA)
CN202011228228.8A 2020-02-12 2020-11-06 用于执行存储器内计算的方法和存储器模块 Active CN113254359B (zh)

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US202062975577P 2020-02-12 2020-02-12
US62/975,577 2020-02-12
US16/859,829 2020-04-27
US16/859,829 US11226816B2 (en) 2020-02-12 2020-04-27 Systems and methods for data placement for in-memory-compute

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CN113254359B true CN113254359B (zh) 2025-12-19

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JP (1) JP7550614B2 (https=)
KR (1) KR102653014B1 (https=)
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US20220171620A1 (en) 2022-06-02
US20250190216A1 (en) 2025-06-12
TWI848184B (zh) 2024-07-11
JP7550614B2 (ja) 2024-09-13
JP2021128752A (ja) 2021-09-02
US11226816B2 (en) 2022-01-18
TW202131190A (zh) 2021-08-16
CN113254359A (zh) 2021-08-13
US12236239B2 (en) 2025-02-25
KR20210103373A (ko) 2021-08-23
US11782707B2 (en) 2023-10-10
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