CN113248258A - Silicon carbide-based composite ceramic material with high spectral selectivity and preparation method and application thereof - Google Patents

Silicon carbide-based composite ceramic material with high spectral selectivity and preparation method and application thereof Download PDF

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CN113248258A
CN113248258A CN202110535695.3A CN202110535695A CN113248258A CN 113248258 A CN113248258 A CN 113248258A CN 202110535695 A CN202110535695 A CN 202110535695A CN 113248258 A CN113248258 A CN 113248258A
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silicon carbide
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黄政仁
祝明
陈健
郑嘉棋
陈文辉
马宁宁
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Shanghai Institute of Ceramics of CAS
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Abstract

The invention relates to a silicon carbide-based composite ceramic material with high spectral selectivity and a preparation method and application thereof; the silicon carbide-based composite ceramic material has a main phase of SiC and a second phase of TiB2And/or ZrB2(ii) a Preferably, the main phase content in the main phase and the second phase is 50vol% to 100 vol%; the second phase content is 0vol% to 50 vol%.

Description

Silicon carbide-based composite ceramic material with high spectral selectivity and preparation method and application thereof
Technical Field
The invention relates to a silicon carbide-based composite ceramic material with high spectral selectivity and a preparation method and application thereof, belonging to the technical field of solar thermal power generation.
Background
The exhaustion of energy and the pollution to the environment in the process of energy utilization are problems which need to be solved urgently by people at present. Solar energy is used as a novel clean energy source, is inexhaustible, and plays a very important role in solving the problem of energy crisis.
Solar energy can be effectively converted into electric energy which can be used by human beings through a solar thermal power generation technology. Among these, the heat absorber is a key component of a solar thermal power generation system, which transfers the energy of solar radiation to a heat transfer fluid, which is used for thermodynamic cycle power generation. However, due to the substantial heat losses (mainly thermal radiation, and also thermal and convection) in the actual heat transfer process, the solar energy received by the absorber is not completely transferred to the heat transfer fluid. Therefore, the development of absorber materials with high solar absorption coefficient α (0.3-2.5 μm) and low emissivity ε (2.5-16 μm) is one of the important issues to be solved in solar thermal power generation technology.
The silicon carbide ceramic has very high solar energy absorption coefficient, and simultaneously has excellent performances of high thermal conductivity, good high-temperature oxidation resistance, excellent high-temperature mechanical property and the like, so that the silicon carbide ceramic can be used as a solar energy heat absorption material. However, the high heat radiation properties of silicon carbide ceramics tend to dissipate the absorbed energy as heat radiation, which compromises its practical effectiveness in use. Therefore, the method has important significance for improving the spectral selectivity alpha/epsilon of the silicon carbide ceramic.
Disclosure of Invention
Aiming at the problem that the spectrum selectivity of the silicon carbide ceramic is too low when the silicon carbide ceramic is applied to a solar heat absorption material, the invention provides a silicon carbide complex phase ceramic material with high spectrum selectivity and a preparation method and application thereof.
In a first aspect, the invention provides a silicon carbide complex phase ceramic material with high spectral selectivity, wherein the main phase of the silicon carbide complex phase ceramic material is SiC, and the second phase is TiB2And/or ZrB2(ii) a Preferably, of said main and second phases, mainThe phase content is 50vol% -100 vol%; the second phase content is 0vol% to 50 vol%.
Selection of TiB2And ZrB2The spectral selectivity of silicon carbide ceramic as the second phase material is adjusted because it has a very low infrared emissivity. When the SiC is compounded with the silicon carbide, the advantages of high solar energy absorption rate, high heat conduction, excellent oxidation resistance and the like of the SiC and the low infrared radiance of a second phase can be integrated, so that the high spectrum selective solar heat absorber material with excellent comprehensive performance is prepared.
Preferably, the silicon carbide-based composite ceramic material further comprises a B-C system sintering aid; the content of the main phase and the second phase is 90-96 wt%; the B-C system sintering aid accounts for 4-10wt% of the total raw materials, and the sum of the components is 100%.
The spectral selectivity of the pure solid phase silicon carbide ceramic was 1.424. When the content of the second phase is more than 0 and less than or equal to 5vol percent, the emissivity of SiC is extremely low in a wave band of 11-13 mu m, and TiB2/ZrB2The emissivity of (a) is relatively high, which causes a small amount (0-5 vol%) of second phase recombination to exhibit an increase in emissivity of the composite material, resulting in a decrease in selectivity. When 5 vol% of TiB is doped2Then the spectrum selectivity of the complex phase ceramic is 1.403; when 5 vol% ZrB is doped2The spectral selectivity of the complex phase ceramic was 1.398, both of which were reduced compared to the pure solid phase silicon carbide ceramic. When the content of the second phase is less than or equal to 5 vol% and less than or equal to 50vol%, the spectral selectivity of the complex phase ceramic shows an upward trend. In particular, when the second phase is TiB2The spectral selectivity increases from 1.403 to 1.632 with increasing doping; when the second phase is ZrB2The spectral selectivity is improved from 1.398 to 1.549 with the increase of the doping amount.
Preferably, the SiC-TiB produced2The spectrum selectivity alpha/epsilon of the complex phase ceramic material is as follows: 1.403-1.632; produced SiC-ZrB2The spectrum selectivity alpha/epsilon of the complex phase ceramic material is as follows: 1.398-1.549.
In a second aspect, the present invention provides a preparation method of the silicon carbide composite ceramic material with high spectral selectivity, including: mixing the raw materials of SiC powder and TiB2And/or ZrB2Adding the powder and the B-C system sintering aid into absolute ethyl alcohol, adding a binder, and performing ball milling to obtain slurry; drying, crushing and granulating the obtained slurry to obtain mixed powder; and (3) dry-pressing the mixed powder to form, and then performing cold isostatic pressing, negative pressure dewaxing and normal pressure sintering to obtain the composite ceramic block.
Preferably, the grain diameter of the SiC powder is 0.5-1 μm; the TiB2The particle size of the powder is 1-3 μm; the ZrB2The particle size of the powder is 1-3 μm. The finer the particle size of the powder is, the more favorable the sintering densification is, the content of air holes can be reduced, and the mechanical property, the thermal conductivity and the like of a sample are improved.
Preferably, in the B-C system sintering aid, the B source is B4C. At least one of B powder and boric acid; the C source is at least one of phenolic resin, fructose, amorphous carbon and carbon black.
Preferably, the binder is at least one of phenolic resin, PVA and PVB.
Preferably, the ball milling is planetary ball milling for 18-24 hours, so that the powder is as uniform and fine as possible, and sintering can be promoted.
Preferably, the dry pressing forming pressure is 10-20MPa, and the dwell time is 5-15 seconds.
Preferably, the cold isostatic pressure is 150-250MPa, and the pressure maintaining time is 1-3 minutes.
Preferably, the negative pressure dewaxing temperature is 900-.
Preferably, the normal pressure sintering temperature is 2000-2200 ℃, preferably 2100-2200 ℃; the heat preservation time at the highest temperature point is 0.5 to 2 hours; the normal pressure sintering atmosphere is argon atmosphere.
In a third aspect, the invention provides an application of the silicon carbide complex phase ceramic material with high spectral selectivity in a solar heat absorber material.
With increasing content of the second phase (>5 vol%), the spectral selectivity of the sample showed an upward trend; at the same second phase doping amount, TiB2The spectral selectivity is improved to be larger than ZrB2。
The silicon carbide-based complex phase ceramic provided by the invention has high solar spectrum selectivity, has the advantages of high inherent thermal conductivity, excellent oxidation resistance and the like of silicon carbide ceramic, can be used as a solar heat absorber material in a solar heat power generation system, and breaks through the inherent application range, namely, is used as structural ceramic. The sintering method adopted by the invention is a solid-phase normal-pressure sintering method, can realize the production of large-batch products, and provides a foundation for the practical large-scale application of the products.
Drawings
FIG. 1 shows different amounts of TiB2And ZrB2The silicon carbide-based complex phase ceramic has spectral selectivity.
Detailed Description
The present invention is further described below in conjunction with the following embodiments, which are intended to illustrate and not to limit the present invention.
The invention selects TiB with low infrared emissivity2And ZrB2As a second phase, the spectral selectivity of the silicon carbide ceramic is adjusted by solid phase sintering. And the silicon carbide is used as a main phase, and the inherent excellent performances of the silicon carbide, such as high thermal conductivity, excellent oxidation resistance and the like, can be combined, so that the high spectrum selective solar heat absorber material with excellent comprehensive performance is prepared. And the sintering mode of normal pressure sintering provides a foundation for the large-scale production of products.
The following exemplary illustrates a method for preparing a silicon carbide-based complex phase ceramic with high solar spectrum selectivity provided by the present invention:
preparing raw materials, mixing the raw materials, and performing ball milling to obtain mixed slurry. Weighing SiC powder and TiB according to formula of high-spectrum selective silicon carbide ceramic2And/or ZrB2The powder is used as main raw material powder, and B-C system raw materials are added as sintering aids. The raw materials are weighed and then mixed into absolute ethyl alcohol, a binder is added, and then silicon carbide balls are added as ball milling media to be ball milled on a planetary ball mill for a period of time to obtain mixed slurry. Wherein, the grain diameter of the SiC powder can be 0.5-1 μm; TiB2The particle diameter of the powder canIs 1-3 μm; ZrB2The particle size of the powder can be 1-3 μm. The above SiC and TiB2/ZrB2The mass ratio of the main raw material powder to the total raw materials can be 90-96wt%, and in the part, the SiC dosage can be 50-100 vol%; TiB2/ZrB2The proportion of the dosage can be 0vol% to 50 vol%. The source B in the sintering aid can be B4C. One or more of B powder and boric acid, and C source can be one or more of phenolic resin, fructose, amorphous carbon and carbon black. The B-C system sintering aid accounts for 4-10wt% of the total raw materials. The binder is one or more of phenolic resin, PVA and PVB. The binder is added additionally and is used in an amount of about 2-10 wt% of the mass of the raw material. The mixing time can be 12-24 hours, preferably 18-24 hours, so as to obtain uniform and fine powder as far as possible and promote the sintering process.
Drying, crushing, granulating, dry pressing, cold isostatic pressing and other processes to obtain a green body sample. Wherein the drying condition can be drying at 60-100 deg.C for 12-36 hr. The crushing method can be manual grinding or mechanical crushing. The granulation method can be spray granulation or nylon sieving; the dry pressing forming pressure can be 10-20MPa, and the pressure maintaining time can be 5-15 seconds; the cold isostatic pressure can be 150-250MPa, and the pressure maintaining time can be 1-3 minutes.
And (4) dewaxing under negative pressure and sintering under normal pressure to obtain the high solar spectrum selectivity ceramic sample. Wherein the negative pressure dewaxing temperature can be 900-; the normal pressure sintering temperature can be 2000-2200 ℃, the temperature is preferably 2100-2200 ℃, and the holding time can be 0.5-2 hours.
The ceramic sample is processed into a wafer with the diameter of 35mm and the thickness of 3mm, and both sides of the wafer are ground flat to test the solar absorptivity (alpha) and the thermal emissivity (epsilon), and the spectral selectivity (alpha/epsilon) is calculated.
The test results are: the spectral selectivity of the pure solid phase silicon carbide ceramic was 1.424. When the content of the second phase is more than 0 and less than or equal to 5 vol%, the spectral selectivity shows a decreasing tendency. Because the emissivity of SiC is very low in the 11-13 μm band, while TiB2/ZrB2The emissivity of (A) is relatively high, which allows a small amount (0-5 vol%) of second phases to recombineThe composite emissivity then appears to increase, resulting in a decrease in selectivity. When 5 vol% of TiB is doped2Then the spectrum selectivity of the complex phase ceramic is 1.403; when 5 vol% ZrB is doped2The spectral selectivity of the complex phase ceramic was 1.398, both of which were reduced compared to the pure solid phase silicon carbide ceramic. When the content of the second phase is less than or equal to 5 vol% and less than or equal to 50vol%, the spectral selectivity of the complex phase ceramic shows an upward trend. In particular, when the second phase is TiB2The spectral selectivity increases from 1.403 to 1.632 with increasing doping; when the second phase is ZrB2The spectral selectivity is improved from 1.398 to 1.549 with the increase of the doping amount.
The present invention will be described in detail by way of examples. It is also to be understood that the following examples are illustrative of the present invention and are not to be construed as limiting the scope of the invention, and that certain insubstantial modifications and adaptations of the invention by those skilled in the art in light of the foregoing description are intended to be included within the scope of the invention.
Example 1
Preparing pure solid phase sintered silicon carbide ceramic. 188g of SiC powder is weighed as a raw material, 2g B4The C powder is a boron source, 4g of carbon black is used as one of carbon sources, and 20g of phenolic resin solution is added to be used as a binder and the carbon source to form all the raw materials. All the raw materials are added into a proper amount of absolute ethyl alcohol, and ball milling is carried out on a planet ball mill for 24 hours to obtain mixed slurry. Drying, crushing, sieving and granulating to obtain mixed powder. And (3) dry-pressing the mixed powder at the pressure of 15MPa for 15 seconds, and then carrying out cold isostatic pressing at the pressure of 200MPa for 3 minutes to obtain a blank sample. And (3) carrying out negative pressure dewaxing on the blank sample at the temperature of 900 ℃ for 0.5 hour, and then carrying out normal pressure sintering at the temperature of 2200 ℃ for 1 hour to obtain the ceramic sample. The spectral selectivity of the sample is 1.424 through testing and calculation.
Example 2
Preparation of a second phase of 5 vol% TiB2The silicon carbide-based composite ceramic. 150g of SiC powder and 11.1g of TiB were weighed2Is used as a main raw material, namely SiC accounts for 95 vol%, TiB2The content ratio was 5 vol%. 1.17g B was additionally added4The C powder is a boron source, 3.43g of carbon black is used as one of carbon sources, and 17.14g of phenolic resin solution is added to be used as a binder and a carbon source to form all raw materials. All the raw materials are added into a proper amount of absolute ethyl alcohol, and ball milling is carried out on a planet ball mill for 24 hours to obtain mixed slurry. Drying, crushing, sieving and granulating to obtain mixed powder. And (3) dry-pressing the mixed powder at the pressure of 15MPa for 15 seconds, and then carrying out cold isostatic pressing at the pressure of 200MPa for 3 minutes to obtain a blank sample. And (3) carrying out negative pressure dewaxing on the blank sample at the temperature of 900 ℃ for 0.5 hour, and then carrying out normal pressure sintering at the temperature of 2200 ℃ for 1 hour to obtain the ceramic sample. The spectral selectivity of the sample is 1.403 through testing and calculation.
Example 3
Preparation of a second phase of 5 vol% ZrB2The silicon carbide-based composite ceramic. 150g of SiC powder and 15.05g of ZrB were weighed2Is used as main raw material, namely SiC accounts for 95 vol%, ZrB2The content ratio was 5 vol%. 1.76g B was additionally added4The C powder is a boron source, 3.51g of carbon black is used as one of carbon sources, and 17.56g of phenolic resin solution is added to be used as a binder and a carbon source to form all raw materials. All the raw materials are added into a proper amount of absolute ethyl alcohol, and ball milling is carried out on a planet ball mill for 24 hours to obtain mixed slurry. Drying, crushing, sieving and granulating to obtain mixed powder. And (3) dry-pressing the mixed powder at the pressure of 15MPa for 15 seconds, and then carrying out cold isostatic pressing at the pressure of 200MPa for 3 minutes to obtain a blank sample. And (3) carrying out negative pressure dewaxing on the blank sample at the temperature of 900 ℃ for 0.5 hour, and then carrying out normal pressure sintering at the temperature of 2200 ℃ for 1 hour to obtain the ceramic sample. The spectral selectivity of the sample is 1.398 through testing and calculation.
Example 4
Preparation of a second phase of 15 vol% TiB2The silicon carbide-based composite ceramic. 135g of SiC powder and 33.5g of TiB were weighed2Is used as a main raw material, namely SiC accounts for 85vol percent of the SiC and TiB2The content ratio is 15 vol%. 1.79g B was additionally added4The C powder is a boron source, 3.59g of carbon black is used as one of carbon sources, and 17.93g of phenolic resin solution is added to be used as a binder and a carbon source to form all raw materials. Will be provided withAll the raw materials are added into a proper amount of absolute ethyl alcohol, and ball milling is carried out on a planet ball mill for 24 hours to obtain mixed slurry. Drying, crushing, sieving and granulating to obtain mixed powder. And (3) dry-pressing the mixed powder at the pressure of 15MPa for 15 seconds, and then carrying out cold isostatic pressing at the pressure of 200MPa for 3 minutes to obtain a blank sample. And (3) carrying out negative pressure dewaxing on the blank sample at the temperature of 900 ℃ for 0.5 hour, and then carrying out normal pressure sintering at the temperature of 2200 ℃ for 1 hour to obtain the ceramic sample. The spectral selectivity of the sample is 1.43 through testing and calculation.
Example 5
Preparation of a second phase of 15 vol% ZrB2The silicon carbide-based composite ceramic. 135g of SiC powder and 45.41g of ZrB were weighed2Is used as a main raw material, namely SiC accounts for 85 vol% of the SiC and ZrB2The content ratio is 15 vol%. 1.92g B was additionally added4The C powder is a boron source, 3.84g of carbon black is used as one of carbon sources, and 19.19g of phenolic resin solution is added to be used as a binder and a carbon source to form all raw materials. All the raw materials are added into a proper amount of absolute ethyl alcohol, and ball milling is carried out on a planet ball mill for 24 hours to obtain mixed slurry. Drying, crushing, sieving and granulating to obtain mixed powder. And (3) dry-pressing the mixed powder at the pressure of 15MPa for 15 seconds, and then carrying out cold isostatic pressing at the pressure of 200MPa for 3 minutes to obtain a blank sample. And (3) carrying out negative pressure dewaxing on the blank sample at the temperature of 900 ℃ for 0.5 hour, and then carrying out normal pressure sintering at the temperature of 2200 ℃ for 1 hour to obtain the ceramic sample. The spectral selectivity of the sample is 1.43 through testing and calculation.
Example 6
Preparation of a second phase of 25 vol% TiB2The silicon carbide-based composite ceramic. Weighing 120g of SiC powder and 56.25g of TiB2Is used as a main raw material, namely SiC accounts for 75 vol% of the SiC and TiB2The content ratio is 25 vol%. 1.88g B was additionally added4The C powder is a boron source, 3.75g of carbon black is used as one of carbon sources, and 18.75g of phenolic resin solution is added to be used as a binder and the carbon source to form all raw materials. All the raw materials are added into a proper amount of absolute ethyl alcohol, and ball milling is carried out on a planet ball mill for 24 hours to obtain mixed slurry. Drying, crushing, sieving and granulating to obtainTo a mixed powder. And (3) dry-pressing the mixed powder at the pressure of 15MPa for 15 seconds, and then carrying out cold isostatic pressing at the pressure of 200MPa for 3 minutes to obtain a blank sample. And (3) carrying out negative pressure dewaxing on the blank sample at the temperature of 900 ℃ for 0.5 hour, and then carrying out normal pressure sintering at the temperature of 2200 ℃ for 1 hour to obtain the ceramic sample. The spectral selectivity of the sample was measured and calculated to be 1.499.
Example 7
Preparation of a second phase of 25 vol% ZrB2The silicon carbide-based composite ceramic. Weighing 120g of SiC powder and 76.25g of ZrB2Is taken as a main raw material, namely SiC accounts for 75 vol% of the SiC and ZrB2The content ratio is 25 vol%. 2.09g B was additionally added4The C powder is a boron source, 4.18g of carbon black is used as one of carbon sources, and 20.88g of phenolic resin solution is added to be used as a binder and the carbon source to form all raw materials. All the raw materials are added into a proper amount of absolute ethyl alcohol, and ball milling is carried out on a planet ball mill for 24 hours to obtain mixed slurry. Drying, crushing, sieving and granulating to obtain mixed powder. And (3) dry-pressing the mixed powder at the pressure of 15MPa for 15 seconds, and then carrying out cold isostatic pressing at the pressure of 200MPa for 3 minutes to obtain a blank sample. And (3) carrying out negative pressure dewaxing on the blank sample at the temperature of 900 ℃ for 0.5 hour, and then carrying out normal pressure sintering at the temperature of 2200 ℃ for 1 hour to obtain the ceramic sample. The spectral selectivity of the sample is 1.464 by testing and calculation.
Example 8
Preparation of a second phase of 35 vol% TiB2The silicon carbide-based composite ceramic. Weighing 100g of SiC powder, 75.72g of TiB2Is used as a main raw material, namely SiC accounts for 65vol percent and TiB2The content ratio was 35 vol%. 1.87g B was additionally added4The C powder is a boron source, 3.74g of carbon black is used as one of carbon sources, and 18.69g of phenolic resin solution is added to be used as a binder and a carbon source to form all raw materials. All the raw materials are added into a proper amount of absolute ethyl alcohol, and ball milling is carried out on a planet ball mill for 24 hours to obtain mixed slurry. Drying, crushing, sieving and granulating to obtain mixed powder. Dry pressing the mixed powder at 15MPa for 15 seconds, cold isostatic pressing at 200MPa for 3 minAnd (5) obtaining a blank sample. And (3) carrying out negative pressure dewaxing on the blank sample at the temperature of 900 ℃ for 0.5 hour, and then carrying out normal pressure sintering at the temperature of 2200 ℃ for 1 hour to obtain the ceramic sample. The spectral selectivity of the sample is 1.525 through testing and calculation.
Example 9
Preparation of a second phase of 35 vol% ZrB2The silicon carbide-based composite ceramic. Weighing 100g of SiC powder, 102.64g of ZrB2As the main raw material, namely SiC accounting for 65 vol% of the two, ZrB2The content ratio was 35 vol%. 2.16g B was additionally added4The C powder is a boron source, 4.31g of carbon black is used as one of carbon sources, and 21.56g of phenolic resin solution is added to be used as a binder and a carbon source to form all raw materials. All the raw materials are added into a proper amount of absolute ethyl alcohol, and ball milling is carried out on a planet ball mill for 24 hours to obtain mixed slurry. Drying, crushing, sieving and granulating to obtain mixed powder. And (3) dry-pressing the mixed powder at the pressure of 15MPa for 15 seconds, and then carrying out cold isostatic pressing at the pressure of 200MPa for 3 minutes to obtain a blank sample. And (3) carrying out negative pressure dewaxing on the blank sample at the temperature of 900 ℃ for 0.5 hour, and then carrying out normal pressure sintering at the temperature of 2200 ℃ for 1 hour to obtain the ceramic sample. The spectral selectivity of the sample is 1.476 after testing and calculation.
Example 10
Preparation of a second phase of 50vol% TiB2The silicon carbide-based composite ceramic. Weighing 85g of SiC powder, 119.53g of TiB2Is used as a main raw material, namely SiC accounts for 50vol% of the SiC and TiB2The content ratio is 50 vol%. 2.18g B was additionally added4The C powder is a boron source, 4.35g of carbon black is used as one of carbon sources, and 21.76g of phenolic resin solution is added to be used as a binder and a carbon source to form all raw materials. All the raw materials are added into a proper amount of absolute ethyl alcohol, and ball milling is carried out on a planet ball mill for 24 hours to obtain mixed slurry. Drying, crushing, sieving and granulating to obtain mixed powder. And (3) dry-pressing the mixed powder at the pressure of 15MPa for 15 seconds, and then carrying out cold isostatic pressing at the pressure of 200MPa for 3 minutes to obtain a blank sample. The green body sample is subjected to negative pressure dewaxing after being subjected to heat preservation at 900 ℃ for 0.5 hour, and then subjected to normal pressure sintering after being subjected to heat preservation at 2200 ℃ for 1 hourAnd obtaining a ceramic sample. The spectral selectivity of the sample is 1.632 through testing and calculation.
Example 11
Preparation of a second phase of 50vol% ZrB2The silicon carbide-based composite ceramic. Weighing 85g of SiC powder and 162.03g of ZrB2Is taken as a main raw material, namely SiC accounts for 50vol% of the SiC and ZrB2The content ratio is 50 vol%. 2.63g B was additionally added4The C powder is a boron source, 5.26g of carbon black is used as one of carbon sources, and 26.28g of phenolic resin solution is added to be used as a binder and the carbon source to form all raw materials. All the raw materials are added into a proper amount of absolute ethyl alcohol, and ball milling is carried out on a planet ball mill for 24 hours to obtain mixed slurry. Drying, crushing, sieving and granulating to obtain mixed powder. And (3) dry-pressing the mixed powder at the pressure of 15MPa for 15 seconds, and then carrying out cold isostatic pressing at the pressure of 200MPa for 3 minutes to obtain a blank sample. And (3) carrying out negative pressure dewaxing on the blank sample at the temperature of 900 ℃ for 0.5 hour, and then carrying out normal pressure sintering at the temperature of 2200 ℃ for 1 hour to obtain the ceramic sample. The spectral selectivity of the sample is 1.549 by testing and calculation.

Claims (10)

1. The silicon carbide complex phase ceramic material with high spectral selectivity is characterized in that the main phase of the silicon carbide complex phase ceramic material is SiC, and the second phase is TiB2And/or ZrB2(ii) a Preferably, the main phase content in the main phase and the second phase is 50vol% to 100 vol%; the second phase content is 0vol% to 50 vol%.
2. The silicon carbide composite ceramic material with high spectral selectivity of claim 1, further comprising a B-C system sintering aid; the content of the main phase and the second phase is 90-96 wt%; the B-C system sintering aid accounts for 4-10wt% of the total raw materials, and the sum of the components is 100%.
3. The silicon carbide composite ceramic material with high spectral selectivity of claim 1 or 2, wherein the SiC-TiB is prepared2The spectrum selectivity alpha/epsilon of the complex phase ceramic material is as follows: 1.403-1.632; produced SiC-ZrB2The spectrum selectivity alpha/epsilon of the complex phase ceramic material is as follows: 1.398-1.549.
4. A method for preparing a silicon carbide composite ceramic material with high spectral selectivity according to any one of claims 1 to 3, comprising: mixing the raw materials of SiC powder and TiB2And/or ZrB2Adding the powder and the B-C system sintering aid into absolute ethyl alcohol, adding a binder, and performing ball milling to obtain slurry; drying, crushing and granulating the obtained slurry to obtain mixed powder; and (3) dry-pressing the mixed powder to form, and then performing cold isostatic pressing, negative pressure dewaxing and normal pressure sintering to obtain the composite ceramic block.
5. The production method according to claim 4, wherein the particle size of the SiC powder is 0.5 to 1 μm; the TiB2The particle size of the powder is 1-3 μm; the ZrB2The particle size of the powder is 1-3 μm.
6. The method according to claim 4 or 5, wherein the B source in the B-C system sintering aid is B4C. At least one of B powder and boric acid; the C source is at least one of phenolic resin, fructose, amorphous carbon and carbon black.
7. The method of any one of claims 4-6, wherein the binder is at least one of phenolic resin, PVA, and PVB.
8. The production method according to any one of claims 4 to 7, wherein the dry-press molding pressure is 10 to 20MPa, and the dwell time is 5 to 15 seconds; the cold isostatic pressure is 150-250MPa, and the pressure maintaining time is 1-3 minutes.
9. The preparation method according to any one of claims 4 to 8, wherein the negative pressure dewaxing temperature is 900-1100 ℃, and the holding time is 0.5-2 hours; the normal pressure sintering temperature is 2000-2200 ℃, and the preferable temperature is 2100-2200 ℃; the heat preservation time at the highest temperature point is 0.5 to 2 hours; the normal pressure sintering atmosphere is argon atmosphere.
10. Use of a silicon carbide composite ceramic material with high spectral selectivity according to any one of claims 1 to 3 in a solar thermal absorber material.
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