CN113246012A - Control method, equipment and storage medium for chemical mechanical polishing - Google Patents
Control method, equipment and storage medium for chemical mechanical polishing Download PDFInfo
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- CN113246012A CN113246012A CN202110526806.4A CN202110526806A CN113246012A CN 113246012 A CN113246012 A CN 113246012A CN 202110526806 A CN202110526806 A CN 202110526806A CN 113246012 A CN113246012 A CN 113246012A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
Abstract
The application discloses a control method, equipment and a storage medium for chemical mechanical polishing, wherein the method comprises the following steps: calculating to obtain first grinding time according to the first front value, the first rear value and the first grinding rate; controlling a first type of grinding disc to grind the target wafer according to the first grinding time; calculating to obtain second grinding time according to the second front value, the second rear value and the second grinding rate, wherein the hardness of the second type of grinding disc is different from that of the first type of grinding disc; and controlling the second type of grinding disc to grind the target wafer according to the second grinding time. According to the method and the device, the first grinding time of the first type grinding disc and the second grinding time of the second type grinding disc are obtained through calculation, so that the target wafer is ground according to the first grinding time and the second grinding time, and the first grinding time and the second grinding time are obtained through calculation based on the thickness difference in the last grinding process, so that the grinding thickness can be accurately controlled, and the yield of products is improved.
Description
Technical Field
The present disclosure relates to the field of semiconductor manufacturing technologies, and in particular, to a method and an apparatus for controlling Chemical Mechanical Polishing (CMP), and a storage medium.
Background
The chemical mechanical polishing process is an important process in the manufacture of semiconductor devices, and the planarization treatment is carried out on semiconductor wafers by utilizing the synergistic effect of chemical corrosion and mechanical polishing, so that the local and global flatness of the semiconductor devices can be effectively considered.
In the related art, in the chemical polishing process, it includes a fixed time (by time) polishing step and a dynamic time polishing step. The grinding step with fixed time is a method for grinding in fixed time, and the grinding step with dynamic time is a method for grinding by dynamically adjusting grinding time.
However, in the polishing step with a fixed time (especially in the process of performing chemical mechanical polishing on the interlayer dielectric (ILD)), the polishing rate of the polishing disk has fluctuation, and the fluctuation value is usually large, so that the polishing thickness fluctuation is large, and the reliability and yield of the semiconductor product are reduced. For example, in a wafer with large polishing thickness fluctuation, if the polishing thickness is too large, the thin film on the wafer is too thin, and in some cases, the metal interconnection layer and the gate electrode are contacted to cause short circuit.
Disclosure of Invention
The application provides a control method, equipment and a storage medium for chemical mechanical polishing, which can solve the problem that the chemical mechanical polishing method provided by the related technology is low in product reliability and yield due to the fact that the polishing rate of a polishing disk in a fixed-time polishing step is fluctuated.
In one aspect, an embodiment of the present application provides a method for controlling chemical mechanical polishing, including:
calculating to obtain first grinding time according to a first front value, a first rear value and a first grinding rate, wherein the first front value is the thickness of the wafer before the wafer is ground by a first type of grinding disc in the last grinding process, and the first rear value is the thickness of the wafer after the wafer is ground by the first type of grinding disc in the last grinding process;
controlling the first type of grinding disc to grind the target wafer according to the first grinding time;
calculating to obtain a second grinding time according to a second front value, a second rear value and a second grinding rate, wherein the second front value is the thickness of the wafer before the wafer is ground by the second type of grinding disc in the last grinding process, the second rear value is the thickness of the wafer after the wafer is ground by the second type of grinding disc in the last grinding process, and the hardness of the second type of grinding disc is different from that of the first type of grinding disc;
and controlling the second type of grinding disc to grind the target wafer according to the second grinding time.
Optionally, the calculating a first grinding time according to the first front value, the first back value and the first grinding rate includes:
calculating to obtain a first actual grinding amount according to the first front value, the first target front value, the first rear value and the first target rear value;
calculating the first grinding time according to the first actual grinding amount and the first grinding rate;
the first pre-target value is an expected thickness of the wafer before being polished by the first type of polishing disk, the first post-target value is an expected thickness of the wafer after being polished by the first type of polishing disk, and the first actual polishing amount is an actual polishing thickness of the wafer after being polished by the first type of polishing disk in the last polishing process.
Optionally, the controlling the second type of polishing disk to polish the target wafer according to the second polishing time includes:
calculating to obtain a second actual grinding amount according to the second pre-value, the second target pre-value, the second post-value and the second target post-value;
calculating to obtain the second grinding time according to the second actual grinding amount and the second grinding rate;
the second pre-target value is an expected thickness of the wafer before being polished by the second type of polishing disk, the second post-target value is an expected thickness of the wafer after being polished by the second type of polishing disk, and the second actual polishing amount is an actual polishing thickness of the wafer after being polished by the second type of polishing disk in the last polishing process.
Optionally, before calculating the first polishing time according to the first front value, the first back value and the first polishing rate, the method further includes:
and calculating to obtain the first grinding rate according to the first grinding rate in the last grinding process and the first rear value.
Optionally, the calculating the first polishing rate according to the first polishing rate in the last polishing process and the first later value includes:
calculating to obtain a first grinding rate according to the first grinding rate in the last grinding process and the difference value between the first rear value and a first target rear value;
wherein the first target post value is a thickness expected to be achieved after the wafer is polished by the first type of polishing disk.
Optionally, before calculating the second grinding time according to the second front value, the second rear value and the second grinding rate, the method further includes:
and calculating to obtain the second grinding rate according to the second grinding rate in the last grinding process and the second rear value.
Optionally, the calculating the second polishing rate according to the second polishing rate in the last polishing process and the second rear value includes:
calculating to obtain a second grinding rate according to a second grinding rate in the last grinding process and a difference value between the second rear value and a second target rear value;
wherein the second target post value is a thickness expected to be achieved after the wafer is polished by the second type of polishing disk.
Optionally, the hardness of the first type of abrasive disc is less than the hardness of the second type of abrasive disc.
In another aspect, an embodiment of the present application provides a chemical mechanical polishing apparatus, including:
the first type of grinding disc is used for grinding the target wafer according to the control of the control device;
the second type of grinding disc is used for grinding the target wafer according to the control of the control device, and the hardness of the second type of grinding disc is different from that of the first type of grinding disc;
the control device comprises a processor and a memory, wherein at least one instruction or program is stored in the memory, and the instruction or program is loaded by the processor and executed to realize the control method of the chemical mechanical polishing.
In another aspect, an embodiment of the present application provides a computer-readable storage medium, where at least one instruction is stored in the storage medium, and the instruction is loaded and executed by a processor to implement the method for controlling chemical mechanical polishing as described in any one of the above.
The technical scheme at least comprises the following advantages:
the method comprises the steps of calculating to obtain first grinding time in the grinding process of the time by obtaining the thickness of a wafer before and after the wafer is ground through a first type of grinding disc in the last grinding process, calculating to obtain second grinding time in the grinding process of the time by obtaining the thickness of the wafer before and after the wafer is ground through a second type of grinding disc in the last grinding process, grinding a target wafer according to the first grinding time and the second grinding time, and reflecting the grinding speed of the grinding disc timely because the first grinding time and the second grinding time are calculated based on the thickness difference in the last grinding process, so that the grinding thickness can be controlled more accurately, and the reliability and the yield of products are improved.
Drawings
In order to more clearly illustrate the detailed description of the present application or the technical solutions in the prior art, the drawings needed to be used in the detailed description of the present application or the prior art description will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a schematic view of a chemical mechanical polishing apparatus provided in an exemplary embodiment of the present application;
FIG. 2 is a flow chart of a method for controlling CMP according to an exemplary embodiment of the present application;
FIG. 3 is a flow chart of a method for controlling CMP according to an exemplary embodiment of the present application;
fig. 4 is a flowchart of a method for controlling cmp according to an exemplary embodiment of the present disclosure.
Detailed Description
The technical solutions in the present application will be described clearly and completely with reference to the accompanying drawings, and it is obvious that the described embodiments are some, but not all embodiments of the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; the connection can be mechanical connection or electrical connection; the two elements may be directly connected or indirectly connected through an intermediate medium, or may be communicated with each other inside the two elements, or may be wirelessly connected or wired connected. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.
In addition, the technical features mentioned in the different embodiments of the present application described below may be combined with each other as long as they do not conflict with each other.
Referring to fig. 1, a schematic diagram of a chemical mechanical polishing apparatus provided by an exemplary embodiment of the present application is shown, as shown in fig. 1, the apparatus including:
the first type of polishing disk 110 is used for polishing the target wafer 201 under the control of the control device 130.
And a second type polishing disk 120 for polishing the target wafer 201 under the control of the control device 130, the second type polishing disk 120 and the first type polishing disk 110 having different hardness.
The control device 130 includes a processor 131 and a memory 132, where the memory 131 stores at least one instruction or program, and the instruction or program is loaded and executed by the processor 131 to implement the method for controlling the chemical mechanical polishing provided in any one of the following embodiments.
For example, the control device 130 may be an Advanced Process Control (APC) system in which a first APC model and a second APC model are stored, the first APC model being used for calculating relevant parameters for grinding by the first type of grinding disc 110, and the second APC model being used for calculating relevant parameters for grinding by the second type of grinding disc 120.
The target wafer 201 is a wafer to be polished in the current polishing process of the wafers 200 to be polished.
The target wafer 201 needs to be sequentially polished by the first type polishing disk 110 and the second type polishing disk 120, the first type polishing disk 110 polishes the target wafer 201 according to the first polishing time indicated by the first APC model, and the second type polishing disk 120 polishes the target wafer 201 according to the second polishing time indicated by the second APC model.
Before the target wafer 201 is placed on the first type polishing disk 110 for polishing, a first front value of the target wafer 201 needs to be measured, where the first front value is a thickness of the target wafer 201 before the target wafer 201 is polished by the first type polishing disk 110, and after the control device 130 controls the first type polishing disk 110 to polish the target wafer 201, a first rear value needs to be measured, where the first rear value is a thickness of the target wafer 201 after the target wafer 201 is polished by the first type polishing disk 110.
The first APC model may calculate a first polishing time in a next polishing process according to the first front value, the first back value, and a first polishing rate (a rate of the first type of polishing disc 110 in the polishing process) in the current polishing process; similarly, in the current polishing process, the first polishing time for the target wafer 201 to be polished by the first type of polishing pad 110 can be calculated by the first front value, the first rear value and the first polishing rate in the last polishing process.
Optionally, at least two first type grinding discs 110 may be included, and in the current grinding process, the grinding time of each first type grinding disc 110 may be allocated according to the first grinding time in the current grinding process; optionally, the hardness of the second type of abrasive disc 120 is less than the hardness of the second type of abrasive disc 120.
Before the target wafer 201 is placed on the second type polishing disk 120 for polishing, a second front value of the target wafer 201 needs to be measured, where the second front value is a thickness of the target wafer 201 before the target wafer 201 is polished by the second type polishing disk 120, and after the control device 130 controls the second type polishing disk 120 to polish the target wafer 201, a second rear value needs to be measured, where the second rear value is a thickness of the target wafer 201 after the target wafer 201 is polished by the second type polishing disk 120.
Wherein, the measured second front value and second rear value are fed back to the second APC model, and the second APC model can calculate the second grinding time in the next grinding process according to the second front value, the second rear value and the second grinding rate (the rate of the second type of grinding disc 120 in the grinding process) in the current grinding process; similarly, in the current polishing process, the second polishing time for the target wafer 201 to be polished by the second type of polishing pad 120 may be calculated by the second front value, the second rear value and the second polishing rate in the last polishing process.
Referring to fig. 2, a flowchart of a method for controlling cmp according to an exemplary embodiment of the present application is shown, where the method can be performed by the control device 130 in the embodiment of fig. 1, and the method can be applied to a process of performing cmp on an ILD on a wafer, and the method includes:
The first front value is the thickness of the wafer before the last grinding process is carried out through the first type of grinding disc, the first rear value is the thickness of the wafer after the last grinding process is carried out through the first type of grinding disc, and the first grinding rate can be obtained through calculation through the first grinding rate in the last grinding process. Optionally, the wafer is used for manufacturing logic devices.
Optionally, before step 201, the method further includes: and calculating to obtain a first grinding rate according to the first grinding rate and the first rear value in the last grinding process. For example, the first polishing rate may be calculated according to a first polishing rate in the last polishing process and a difference between a first post-polishing value and a first target post-polishing value, where the first target post-polishing value is a thickness expected to be achieved after the wafer is polished by the first type of polishing disk.
Illustratively, the first polishing rate in the nth polishing process (n is a natural number, n.gtoreq.2) can be calculated by the following equation:
RR1(n)＝RR1(n-1)-RR1(n-1)·(Post1(n-1)-Post1_T)·P1
wherein, RR1(n) is the first polishing rate in the nth polishing process, RR1(n-1) is the first polishing rate in the (n-1) th polishing process (the first polishing rate in the first calculation process may be an empirical value (the empirical value may be an average value of multiple measurements), or may be a simulated value, or may be a value obtained by simulation based on measurement data), Post1(n-1) is the first Post-value measured in the (n-1) th polishing process, Post1_ T is the first target Post-value, and P1 is the adjustment parameter (which is a constant, and may be an empirical value) of the first polishing rate. PR (n-1) is the last calculated value, Post1(n-1) is the measured value, and Post 1-T, P1 is a constant.
After the first grinding time is obtained through calculation, the control device can control the first type of grinding disc to grind the target wafer, wherein the grinding time is the first time. If two or more first type of abrasive discs are included, the first grinding time may be assigned to each first type of abrasive disc, e.g., the first grinding time may be equally assigned.
And step 203, calculating to obtain a second grinding time according to the second front value, the second rear value and the second grinding rate.
The first front value is the thickness of the wafer before the last grinding process is carried out through the first type of grinding disc, the first rear value is the thickness of the wafer after the last grinding process is carried out through the first type of grinding disc, and the first grinding rate can be obtained through calculation through the first grinding rate in the last grinding process.
Optionally, before step 203, the method further includes: and calculating to obtain a second grinding rate according to the second grinding rate and the second rear value in the last grinding process. For example, the second polishing rate may be calculated according to a second polishing rate in the last polishing process and a difference between a second post-polishing value and a second target post-polishing value, where the second target post-polishing value is a thickness expected to be achieved after the wafer is polished by the second type of polishing disk.
Illustratively, the second polishing rate in the nth polishing process (n is a natural number, n.gtoreq.2) can be calculated by the following equation:
RR2(n)＝RR2(n-1)-RR2(n-1)·(Post2(n-1)-Post2_T)·P2
wherein RR2(n) is the second polishing rate in the nth polishing process, RR2(n-1) is the second polishing rate in the (n-1) th polishing process (the second polishing rate in the first calculation process may be an empirical value (the empirical value may be an average value of multiple measurements), or may be a simulated value, or may be a value obtained by simulation based on measurement data), Post2(n-1) is the second Post-value measured in the (n-1) th polishing process, Post2_ T is the second target Post-value, and P2 is the adjustment parameter (which may be an empirical value) of the second polishing rate. RR (n-1) is the last calculated value, Post2(n-1) is the measured value, and Post 2-T, P2 is a constant.
And 204, controlling the second type of grinding disc to grind the target wafer according to the second grinding time.
After the second grinding time is obtained through calculation, the control device can control the second type of grinding disc to grind the target wafer, and the grinding time is the second time.
In the embodiment of the present application, the present grinding process may be an nth grinding process, and the previous grinding process may be an (n-1) th grinding process.
In summary, in the embodiment of the present application, the first grinding time in the current grinding process is obtained by obtaining the thickness of the wafer before and after grinding through the first type of grinding disc in the last grinding process, and the second grinding time in the current grinding process is obtained by obtaining the thickness of the wafer before and after grinding through the second type of grinding disc in the last grinding process, so as to grind the target wafer according to the first grinding time and the second grinding time.
Referring to fig. 3, a flowchart of a method for controlling cmp according to an exemplary embodiment of the present application is shown, where the method is executed by the control device 130 in the embodiment of fig. 1, and the method may be an alternative embodiment of step 201 in the embodiment of fig. 2, and the method includes:
The first target pre-value is an expected thickness of the wafer before being polished by the first type of polishing disk, and the first actual polishing amount is an actual polishing thickness of the wafer after being polished by the first type of polishing disk in the last polishing process.
Illustratively, the first actual grinding amount in the (n-1) th grinding process can be calculated by the following formula:
RA1(n-1)＝B1(n-1)+(PRE1(n-1)-PRE1_T)·C1
B1(n-1)＝RA(n-1)-(PRE1(n-1)-PRE1_T)·C1+(Post1(n-1)-Post1_T)·C2
wherein RA1(n-1) is the first actual polishing amount in the (n-1) th polishing process, B1(n-1) is the first feedback polishing amount in the (n-1) th polishing process (the first feedback polishing amount is used to represent the difference between the actual first PRE-value and the first target PRE-value), PRE1(n-1) is the first PRE-value measured in the (n-1) th polishing process, PRE1_ T is the first target PRE-value, C1 is the influence factor of the first PRE-value (which may be an empirical value), and C2 is the influence factor of the first post-value (which may be an empirical value). PRE1(n-1) is a measured value, and PRE1_ T, C1 and C2 are constants.
For example, the first grinding time in the nth grinding process can be calculated by the following formula:
where T1(n) is the first polishing time and K1 is the first impact coefficient (which may be an empirical value that is constant and related to the production of chips on the wafer).
Referring to fig. 4, a flowchart of a method for controlling cmp according to an exemplary embodiment of the present application is shown, where the method is executed by the control device 130 in the embodiment of fig. 1, and the method may be an alternative embodiment of step 203 in the embodiment of fig. 2, and the method includes:
step 401, calculating to obtain a second actual grinding amount according to the second pre-value, the second target pre-value, the second post-value and the second target post-value.
The second target pre-value is the expected thickness of the wafer before being polished by the second type of polishing disk, and the second actual polishing amount is the actual polishing thickness after being polished by the second type of polishing disk in the last polishing process.
Illustratively, the second actual grinding amount in the (n-1) th grinding process can be calculated by the following formula:
RA2(n-1)＝B2(n-1)+(PRE2(n-1)-PRE2_T)·C3
b2(n-1) ═ RA2(n-1) - (PRE2(n-1) -PRE2_ T) · C3+ (Post2(n-1) -Post2_ T) · C4, where RA2(n-1) is the second actual polishing amount in the (n-1) th polishing process, B2(n-1) is the second feedback polishing amount in the (n-1) th polishing process (the second feedback polishing amount being used to characterize the difference between the actual second previous value and the second target previous value), PRE2(n-1) is the second previous value measured in the (n-1) th polishing process, PRE2_ T is the second target previous value, C3 is the influence factor of the second previous value (which may be an empirical value), and C4 is the influence factor of the second subsequent value (which may be an empirical value). PRE2(n-1) is a measured value, and PRE2_ T, C3 and C4 are constants.
And step 302, calculating a second grinding time according to the second actual grinding amount and the second grinding rate.
For example, the first grinding time in the nth grinding process can be calculated by the following formula:
where T2(n) is the second polishing time and K2 is the second influence factor (which may be an empirical value that is constant and related to the production of chips on the wafer).
The present application further provides a computer-readable storage medium having at least one instruction, at least one program, a set of codes, or a set of instructions stored therein, which is loaded and executed by the processor to implement the method for controlling chemical mechanical polishing according to any of the above embodiments.
The present application further provides a computer program product, which when run on a computer, causes the computer to execute the method for controlling chemical mechanical polishing provided by the above-mentioned method embodiments.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications of this invention are intended to be covered by the scope of the invention as expressed herein.
Claims (10)
1. A method for controlling chemical mechanical polishing, comprising:
calculating to obtain first grinding time according to a first front value, a first rear value and a first grinding rate, wherein the first front value is the thickness of the wafer before the wafer is ground by a first type of grinding disc in the last grinding process, and the first rear value is the thickness of the wafer after the wafer is ground by the first type of grinding disc in the last grinding process;
controlling the first type of grinding disc to grind the target wafer according to the first grinding time;
calculating to obtain a second grinding time according to a second front value, a second rear value and a second grinding rate, wherein the second front value is the thickness of the wafer before the wafer is ground by the second type of grinding disc in the last grinding process, the second rear value is the thickness of the wafer after the wafer is ground by the second type of grinding disc in the last grinding process, and the hardness of the second type of grinding disc is different from that of the first type of grinding disc;
and controlling the second type of grinding disc to grind the target wafer according to the second grinding time.
2. The method of claim 1, wherein calculating a first polishing time based on the first pre-value, the first post-value, and the first polishing rate comprises:
calculating to obtain a first actual grinding amount according to the first front value, the first target front value, the first rear value and the first target rear value;
calculating the first grinding time according to the first actual grinding amount and the first grinding rate;
the first pre-target value is an expected thickness of the wafer before being polished by the first type of polishing disk, the first post-target value is an expected thickness of the wafer after being polished by the first type of polishing disk, and the first actual polishing amount is an actual polishing thickness of the wafer after being polished by the first type of polishing disk in the last polishing process.
3. The method as claimed in claim 2, wherein the controlling the second type of polishing disk to polish the target wafer according to the second polishing time comprises:
calculating to obtain a second actual grinding amount according to the second pre-value, the second target pre-value, the second post-value and the second target post-value;
calculating to obtain the second grinding time according to the second actual grinding amount and the second grinding rate;
the second pre-target value is an expected thickness of the wafer before being polished by the second type of polishing disk, the second post-target value is an expected thickness of the wafer after being polished by the second type of polishing disk, and the second actual polishing amount is an actual polishing thickness of the wafer after being polished by the second type of polishing disk in the last polishing process.
4. The method of any of claims 1 to 3, wherein before calculating the first polishing time based on the first pre-value, the first post-value, and the first polishing rate, further comprising:
and calculating to obtain the first grinding rate according to the first grinding rate in the last grinding process and the first rear value.
5. The method of claim 4, wherein calculating the first polishing rate based on the first polishing rate during the last polishing and the first post-value comprises:
calculating to obtain a first grinding rate according to the first grinding rate in the last grinding process and the difference value between the first rear value and a first target rear value;
wherein the first target post value is a thickness expected to be achieved after the wafer is polished by the first type of polishing disk.
6. The method of any of claims 1 to 3, wherein before calculating the second polishing time based on the second pre-value, the second post-value, and the second polishing rate, further comprising:
and calculating to obtain the second grinding rate according to the second grinding rate in the last grinding process and the second rear value.
7. The method of claim 6, wherein calculating the second polishing rate based on the second polishing rate during the last polishing and the second post-value comprises:
calculating to obtain a second grinding rate according to a second grinding rate in the last grinding process and a difference value between the second rear value and a second target rear value;
wherein the second target post value is a thickness expected to be achieved after the wafer is polished by the second type of polishing disk.
8. The method of claim 7, wherein the hardness of the first type of abrasive disc is less than the hardness of the second type of abrasive disc.
9. A chemical mechanical polishing apparatus, comprising:
the first type of grinding disc is used for grinding the target wafer according to the control of the control device;
the second type of grinding disc is used for grinding the target wafer according to the control of the control device, and the hardness of the second type of grinding disc is different from that of the first type of grinding disc;
the control device comprises a processor and a memory, wherein at least one instruction or program is stored in the memory, and the instruction or program is loaded by the processor and executed to realize the control method of the chemical mechanical polishing as claimed in any one of claims 1 to 8.
10. A computer-readable storage medium having at least one instruction stored thereon, the instruction being loaded and executed by a processor to implement the method for controlling chemical mechanical polishing according to any one of claims 1 to 8.
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