CN113244939A - Silicon carbide-iron oxide composite material for decomposing sulfur hexafluoride in atmospheric environment and application thereof - Google Patents
Silicon carbide-iron oxide composite material for decomposing sulfur hexafluoride in atmospheric environment and application thereof Download PDFInfo
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- UQSXHKLRYXJYBZ-UHFFFAOYSA-N iron oxide Inorganic materials [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 title claims abstract description 112
- 229910018503 SF6 Inorganic materials 0.000 title claims abstract description 84
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 title claims abstract description 81
- 229960000909 sulfur hexafluoride Drugs 0.000 title claims abstract description 80
- 239000002131 composite material Substances 0.000 title claims abstract description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 23
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 22
- 239000010703 silicon Substances 0.000 title claims abstract description 22
- 238000005234 chemical deposition Methods 0.000 claims abstract description 10
- 239000000126 substance Substances 0.000 claims abstract description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 15
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 14
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 14
- 239000000203 mixture Substances 0.000 claims description 9
- 239000012298 atmosphere Substances 0.000 claims description 6
- SZVJSHCCFOBDDC-UHFFFAOYSA-N ferrosoferric oxide Chemical compound O=[Fe]O[Fe]O[Fe]=O SZVJSHCCFOBDDC-UHFFFAOYSA-N 0.000 claims description 4
- CUPCBVUMRUSXIU-UHFFFAOYSA-N [Fe].OOO Chemical compound [Fe].OOO CUPCBVUMRUSXIU-UHFFFAOYSA-N 0.000 claims description 3
- 229910021519 iron(III) oxide-hydroxide Inorganic materials 0.000 claims description 3
- NDLPOXTZKUMGOV-UHFFFAOYSA-N oxo(oxoferriooxy)iron hydrate Chemical compound O.O=[Fe]O[Fe]=O NDLPOXTZKUMGOV-UHFFFAOYSA-N 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 16
- 238000000354 decomposition reaction Methods 0.000 abstract description 15
- 230000004913 activation Effects 0.000 abstract description 5
- 230000008569 process Effects 0.000 abstract description 5
- 238000011031 large-scale manufacturing process Methods 0.000 abstract description 2
- 238000012545 processing Methods 0.000 abstract description 2
- 238000001338 self-assembly Methods 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 26
- 238000006243 chemical reaction Methods 0.000 description 15
- 238000003421 catalytic decomposition reaction Methods 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 239000003054 catalyst Substances 0.000 description 7
- 239000003795 chemical substances by application Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 229910015189 FeOx Inorganic materials 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 230000003197 catalytic effect Effects 0.000 description 4
- 238000006731 degradation reaction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000005431 greenhouse gas Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 4
- 239000002912 waste gas Substances 0.000 description 4
- 239000002808 molecular sieve Substances 0.000 description 3
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
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- 230000001681 protective effect Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000011775 sodium fluoride Substances 0.000 description 2
- 235000013024 sodium fluoride Nutrition 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000002341 toxic gas Substances 0.000 description 2
- 229910002588 FeOOH Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910001515 alkali metal fluoride Inorganic materials 0.000 description 1
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 238000004817 gas chromatography Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- -1 hydroxyl ferric oxide Chemical compound 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910001463 metal phosphate Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000006303 photolysis reaction Methods 0.000 description 1
- 230000015843 photosynthesis, light reaction Effects 0.000 description 1
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- 239000010802 sludge Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J27/00—Catalysts comprising the elements or compounds of halogens, sulfur, selenium, tellurium, phosphorus or nitrogen; Catalysts comprising carbon compounds
- B01J27/20—Carbon compounds
- B01J27/22—Carbides
- B01J27/224—Silicon carbide
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/34—Chemical or biological purification of waste gases
- B01D53/74—General processes for purification of waste gases; Apparatus or devices specially adapted therefor
- B01D53/86—Catalytic processes
- B01D53/8659—Removing halogens or halogen compounds
-
- B01J35/50—
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2257/00—Components to be removed
- B01D2257/20—Halogens or halogen compounds
- B01D2257/204—Inorganic halogen compounds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
- Y02C20/00—Capture or disposal of greenhouse gases
- Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]
Abstract
The invention relates to a silicon carbide-iron oxide composite material for decomposing sulfur hexafluoride in an atmospheric environment, which is a powdery composite material with a heat-conducting substance as a carrier and iron oxide as an active site center, wherein the mass ratio of the carrier to the iron oxide is 10: 1-60: 1. The method realizes activation and decomposition of the sulfur hexafluoride, can decompose the sulfur hexafluoride in the atmospheric environment, accords with the actual situation, has huge practical potential, is prepared by a simple self-assembly chemical deposition method, has simple process and low processing cost, and is suitable for large-scale production.
Description
Technical Field
The invention relates to the technical field of materials, in particular to a silicon carbide-iron oxide composite material for decomposing sulfur hexafluoride and application thereof.
Background
In recent years, energy, economy, environment, and climate change have become global significant problems, and global warming will become more and more severe if no further action is taken to reduce global greenhouse gas emissions. Sulfur hexafluoride is one of the main global greenhouse gases, can stably exist in the atmosphere for up to 3200 years, has the greenhouse effect potential being 23900 times that of the same amount of carbon dioxide, and therefore is considered as the greenhouse gas with the strongest greenhouse effect. And because the sulfur hexafluoride has excellent electrical insulation and arc extinguishing characteristics, under the same conditions, the sulfur hexafluoride has the insulation capacity of more than 2.5 times that of air and nitrogen and the arc extinguishing capacity of 100 times that of air, can be widely applied to the processes of power failure and insulation products, and inevitably is produced and discharged in large quantities.
The amount of sulfur hexafluoride discharged is also surprising. It is estimated that by 2030, sulfur hexafluoride emissions will reach 6400 ten thousand tons of carbon dioxide equivalent. Related researches show that the unorganized emission of sulfur hexafluoride gas in the power industry is a main source of global sulfur hexafluoride emission, the annual emission amount of the sulfur hexafluoride gas is increased from almost zero in 1953 to 7420 tons in 2008, and therefore, the control of the emission of the sulfur hexafluoride gas and the search of a method for decomposing the sulfur hexafluoride are of great importance.
The prior methods for decomposing sulfur hexafluoride include various methods such as adsorption, thermal decomposition, photolysis, plasma method and catalytic decomposition, wherein the catalytic decomposition method is particularly concerned, and the catalysts used in the catalytic decomposition are mainly of three types: metal oxides, metal phosphates, supported metal catalysts.
In the process of decomposing sulfur hexafluoride, some catalysts can generate toxic fluorine-containing byproducts while decomposing sulfur hexafluoride, which is equivalent to changing greenhouse gases into toxic gases and causing no repayment; other catalysts can only be used for SF in nitrogen or argon atmosphere6Decomposition treatment is carried out, for example, Zhang Jia et al (CN105826535A) utilizes electroplating sludge to decompose sulfur hexafluoride more effectively, but the decomposition process needs to be carried out under the protective atmosphere of nitrogen, experimental data shows that when oxygen exists, the decomposition efficiency is obviously reduced, and under the practical condition, the sulfur hexafluoride is mixed with air, and can be directly recycled if being effectively separated without decomposition treatment.
Patent CN110124512A discloses a method for treating sulfur hexafluoride waste gas, wherein the adopted defluorinating agent is a mixture of a modified mesoporous molecular sieve and silicon powder, the modified mesoporous molecular sieve is a mesoporous molecular sieve modified by alkali metal fluoride and alkaline earth metal oxide together, and continuous and efficient harmless treatment of SF6 gas is realized. But the defluorinating agent used by the method has larger mass, which can cause certain resource waste; in addition, the defluorinating agent prepared by the experiment has the disadvantages of complicated method and complex operation.
The patent CN109045955A discloses an efficient defluorinating agent and application thereof in sulfur hexafluoride waste gas treatment, wherein the defluorinating agent is a mixture consisting of sodium fluoride and simple substance silicon, and the molar ratio of the sodium fluoride to the simple substance silicon is (0-2): introducing sulfur hexafluoride waste gas into a reaction furnace containing a defluorinating agent under an anhydrous condition to carry out a sulfur hexafluoride decomposition reaction. However, this method still has the following drawbacks: firstly, the reaction has higher requirement on temperature (650 ℃), and the energy consumption is higher; second, sulfur hexafluoride is degraded in a mixture with helium, which is incompatible with the environment in which sulfur hexafluoride is present and cannot be used in practical applications.
Disclosure of Invention
The invention aims to solve the problems and provides a silicon carbide-iron oxide composite material for decomposing sulfur hexafluoride and a preparation method and application thereof.
The purpose of the invention is realized by the following technical scheme:
the silicon carbide-iron oxide composite material for decomposing sulfur hexafluoride is a powdery composite material with a heat conduction substance as a carrier and iron oxide as an active site center, and the mass ratio of the carrier to the iron oxide is 10: 1-60: 1.
Preferably, the heat-conducting substance is silicon carbide, the composite material reacts with a substrate in situ at the temperature of over 600 ℃ to generate a high-activity reduced carbon-FeOx electron-rich center, and activation and decomposition of the sulfur hexafluoride are realized.
Preferably, the iron oxide is one or more of ferrous oxide, ferric oxide, ferroferric oxide and iron oxyhydroxide.
Preferably, the mass ratio of the carrier to the iron oxide is 7: 1-30: 1, and more preferably 15: 1.
Preferably, the composite material is prepared by a chemical deposition method.
Preferably, the composite material is applied to decompose sulfur hexafluoride, and comprises the following steps:
(1) introducing sulfur hexafluoride mixed gas into the composite material;
(2) carrying out high-temperature treatment on the composite material in the sulfur hexafluoride mixed gas atmosphere at 500-600 ℃ in a temperature programming tube furnace;
(3) and (4) treating and collecting tail gas by using a sodium hydroxide solution.
Preferably, the sulfur hexafluoride gas mixture is a mixture of sulfur hexafluoride and air, and the volume concentration of the sulfur hexafluoride is 3% -70%, and further preferably, the volume concentration of the sulfur hexafluoride is 3%.
Preferably, the concentration of the sodium hydroxide solution is 1mol/L, and the high-temperature treatment is carried out at 600 ℃ in the step (2).
The silicon carbide-iron oxide composite material takes silicon carbide as a carrier and iron oxide as a powdery composite material of an active site center, and reacts with a substrate in situ at the temperature of 600 ℃ or above to generate a carbon-FeOx electron-rich center in a high-activity reduction state, so that activation and decomposition of sulfur hexafluoride are realized. The degradation of sulfur hexafluoride is divided into two stages of adsorption and activation degradation. The silicon carbide carrier and the iron oxide are both semiconductors, and at a local interface where the semiconductor forms a built-in electric field, a silicon carbide adsorption site poor in electrons and an FeOx activation site rich in electrons can be formed. The poor-electron silicon carbide is beneficial to adsorbing sulfur hexafluoride, and the electron-rich FeOx can inject electrons into sulfur hexafluoride molecules so as to generate an oxidation-reduction reaction, thereby achieving the purpose of degradation.
Compared with the prior art, the silicon carbide-iron oxide composite material for efficiently decomposing sulfur hexafluoride in the atmospheric environment, which is prepared by the invention, has the following advantages:
(1) the catalytic material is prepared by a simple self-assembly chemical deposition method, has simple process and low processing cost, and is suitable for large-scale production.
(2) The catalytic material disclosed by the invention has excellent decomposition capability on sulfur hexafluoride, does not generate toxic gas, and accords with the environmental protection concept.
(3) The catalytic material can decompose sulfur hexafluoride in the atmospheric environment, is different from the prior technology which needs to decompose under the protective atmosphere of nitrogen or argon, is very in line with the actual situation, and has huge practical potential.
(4) The catalytic material of the invention has very rapid decomposition response capability to sulfur hexafluoride and long service life.
Drawings
FIG. 1 is a diagram of decomposition of SF according to the present invention6A gas plant schematic;
FIG. 2 is a diagram of example decomposition of SF6The obtained decomposition rate graph;
FIG. 3 is a graph of the decomposition rate of a support to iron oxide mass ratio of 15:1 and without iron oxide;
in the figure: 1-pure sulfur hexafluoride gas cylinder; 2-a gas flow meter; 3-a gas mixer; 4-quartz reaction tube; 5-a tube furnace; 6-an alkali liquor recovery device; 7-gas chromatography; a-an air inlet; and B-gas outlet after reaction.
Detailed Description
The invention is described in detail below with reference to the figures and specific embodiments.
The silicon carbide-iron oxide composite material for decomposing the sulfur hexafluoride is prepared by taking silicon carbide as a carrier and iron oxide as a load, controlling the mass ratio of the carrier to the iron oxide to be 10: 1-60: 1, and controlling the iron oxide to be one or more of ferrous oxide, ferric oxide, ferroferric oxide and hydroxyl ferric oxide through a chemical deposition method.
The composite material is applied to decompose sulfur hexafluoride, and the decomposed SF is shown in figure 16A schematic of a gas plant, the plant comprising: 1 pure sulfur hexafluoride gas cylinder; 2, a gas flow meter; 3, a gas mixer; 4, a quartz reaction tube; 5, a tube furnace; 6 alkali liquor recovery device; 7, a gas chromatograph; a, an air inlet; and B, gas outlet after reaction.
Specific examples are as follows.
Example 1
In the embodiment, silicon carbide is used as a carrier, iron oxide is used as a load, the iron oxide is specifically ferrous oxide, the mass ratio of the carrier to the iron oxide is controlled to be 19:1, and catalytic decomposition of sulfur hexafluoride is performed after chemical deposition.
The method comprises the following specific steps:
(1) the sulfur hexafluoride waste gas for the experiment is mixed gas of sulfur hexafluoride and air which is configured in a simulation mode, and the concentration of the sulfur hexafluoride is controlled to be 3% by a gas flowmeter and a gas mixing device.
(2) Filling the mixed and ground silicon carbide-iron oxide composite material into a fixed reaction bed, and continuously feeding sulfur hexafluoride gas mixture into the fixed reaction bed for waiting for treatment.
(3) Putting the fixed reaction bed into a tubular furnace, controlling the temperature at 600 ℃, and introducing 1mol L of tail gas from the reaction bed-1In the sodium hydroxide solution, the gas passing through the tail gas absorption liquid can be directly discharged into the atmosphere.
Example 2
In the embodiment, silicon carbide is used as a carrier, iron oxide is used as a load, the iron oxide is specifically ferrous oxide, the mass ratio of the carrier to the iron oxide is controlled to be 11:1, and after chemical deposition, catalytic decomposition of sulfur hexafluoride is performed according to the steps of the embodiment 1.
Example 3
In the embodiment, silicon carbide is used as a carrier, iron oxide is used as a load, the iron oxide is specifically iron oxide, the mass ratio of the carrier to the iron oxide is controlled to be 30:1, and after chemical deposition, catalytic decomposition of sulfur hexafluoride is performed according to the steps in the embodiment 1.
Example 4
In the embodiment, silicon carbide is used as a carrier, iron oxide is used as a load, the iron oxide is specifically ferroferric oxide, the mass ratio of the carrier to the iron oxide is controlled to be 7.5:1, and after chemical deposition, catalytic decomposition of sulfur hexafluoride is carried out according to the steps in the embodiment 1.
Example 5
In the embodiment, silicon carbide is used as a carrier, iron oxide is used as a load, the iron oxide is specifically iron oxyhydroxide, the mass ratio of the carrier to the iron oxide is controlled to be 15:1, after chemical deposition, the step of embodiment 1 is carried out to catalytically decompose sulfur hexafluoride, and the temperature of a tubular furnace is controlled to be 600 ℃.
The above example was decomposed into SF6The resulting decomposition rates were tested and it can be seen from figure 2 that the sulfur hexafluoride started to decompose already when the temperature rose to 600 ℃ (0min) and that after 30 minutes the SF6The removal rate of the catalyst can reach 100 percent, and can last for 140 minutes at least.
Comparative example 1
Only silicon carbide is used as a catalyst in the reaction, the mass of the carrier is controlled to be the same as that of the carrier and the iron oxide after the composition, the catalytic decomposition of the sulfur hexafluoride is carried out according to the steps of the embodiment 1, and the temperature of the tubular furnace is controlled to be 600 ℃.
Comparative example 2
Only using iron oxide as a catalyst in the reaction, controlling the mass of the iron oxide to be the same as that of the compounded carrier and the iron oxide, carrying out catalytic decomposition on sulfur hexafluoride according to the steps of the embodiment 1, and controlling the temperature of the tubular furnace to be 600 ℃.
As can be seen from FIG. 3, under the catalysis of SiC and FeOOH alone, the degradation rate of sulfur hexafluoride is substantially 0 after 3-4 hours of reaction, while when the temperature of the composite material using iron oxide as the active site center reaches 600 ℃ (0min), the conversion rate of sulfur hexafluoride is obviously improved to 29.29%, and then the conversion rate is further improved, which shows that the composite material has obvious technical advantages compared with the composite material without iron oxide.
The embodiments described above are described to facilitate an understanding and use of the invention by those skilled in the art. It will be readily apparent to those skilled in the art that various modifications to these embodiments may be made, and the generic principles described herein may be applied to other embodiments without the use of the inventive faculty. Therefore, the present invention is not limited to the above embodiments, and those skilled in the art should make improvements and modifications within the scope of the present invention based on the disclosure of the present invention.
Claims (10)
1. The silicon carbide-iron oxide composite material for decomposing sulfur hexafluoride in the atmospheric environment is characterized in that a heat conduction type substance is used as a carrier, iron oxide is used as a powdery composite material of an active site center, and the mass ratio of the carrier to the iron oxide is 10: 1-60: 1.
2. The silicon carbide-iron oxide composite material for decomposing sulfur hexafluoride under atmospheric environment as recited in claim 1, wherein the heat conductive substance is silicon carbide.
3. The silicon carbide-iron oxide composite material for decomposing sulfur hexafluoride under the atmospheric environment according to claim 1, wherein the iron oxide is one or more of ferrous oxide, ferric oxide, ferroferric oxide and iron oxyhydroxide.
4. The silicon carbide-iron oxide composite material for decomposing sulfur hexafluoride under the atmospheric environment according to claim 1, wherein the mass ratio of the carrier to the iron oxide is 7: 1-30: 1.
5. The silicon carbide-iron oxide composite material for decomposing sulfur hexafluoride under the atmospheric environment as recited in claim 1, wherein the composite material is prepared by a chemical deposition method.
6. The use of the silicon carbide-iron oxide composite material for decomposing sulfur hexafluoride under atmospheric conditions as recited in claim 1, wherein said composite material is used for decomposing sulfur hexafluoride, comprising the steps of:
(1) introducing sulfur hexafluoride mixed gas into the composite material;
(2) carrying out high-temperature treatment on the composite material in the sulfur hexafluoride mixed gas atmosphere at 500-600 ℃ in a temperature programming tube furnace;
(3) and (4) treating and collecting tail gas by using a sodium hydroxide solution.
7. The use of the silicon carbide-iron oxide composite material for decomposing sulfur hexafluoride under atmospheric environment as recited in claim 6, wherein the sulfur hexafluoride gas mixture is a mixture of sulfur hexafluoride and air, and the volume concentration of sulfur hexafluoride is 3% -70%.
8. Use of the silicon carbide-iron oxide composite material for decomposing sulfur hexafluoride under atmospheric conditions as recited in claim 7, wherein the sulfur hexafluoride is present at a 3% volume concentration.
9. The use of the silicon carbide-iron oxide composite material for decomposing sulfur hexafluoride under atmospheric conditions as recited in claim 7, wherein the high temperature treatment is performed in the step (2) at a temperature in a range of 550 to 600 ℃.
10. The use of the silicon carbide-iron oxide composite material for decomposing sulfur hexafluoride under atmospheric conditions as recited in claim 7, wherein the sodium hydroxide solution has a concentration of 1mol/L, and the high temperature treatment is performed at 600 ℃ in step (2).
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