CN113241383A - Microcavity-coupled two-color quantum cascade infrared detector and preparation method thereof - Google Patents
Microcavity-coupled two-color quantum cascade infrared detector and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 99
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- 229920002120 photoresistant polymer Polymers 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 9
- 229910003460 diamond Inorganic materials 0.000 claims description 6
- 239000010432 diamond Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 5
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- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 230000009977 dual effect Effects 0.000 claims 4
- 239000000126 substance Substances 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 7
- 239000000306 component Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
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Abstract
A double-color quantum cascade infrared detector of microcavity coupling and its preparation method, the double-color quantum cascade infrared detector includes: a semiconductor substrate; a plurality of first microcavity bosses formed on the semiconductor substrate; a plurality of second microcavity bosses formed on the semiconductor substrate; the plurality of first microcavity bosses are connected through first connecting lines; the plurality of second microcavity bosses are connected through second connecting lines; the first microcavity boss, the second microcavity boss, the first connecting line and the second connecting line respectively comprise a lower metal layer, a lower contact layer, an active layer, an upper contact layer and an upper metal layer which are sequentially arranged from bottom to top; a lower electrode, wherein the region of the lower metal layer on the semiconductor substrate except the first connecting line, the second connecting line, the first microcavity bosses and the second microcavity bosses is defined as the lower electrode; the first upper electrode is formed on the lower metal layer and is connected with the first microcavity boss through a first connecting wire; and the second upper electrode is formed on the lower metal layer and is connected with the second micro-cavity boss through a second connecting wire.
Description
Technical Field
The invention relates to the technical field of infrared semiconductor photoelectric devices, in particular to a microcavity-coupled two-color quantum cascade infrared detector and a preparation method thereof.
Background
The infrared detector is a core component of an infrared system and a thermal imaging system, and has important application in the aspects of medical treatment, trace gas detection, space remote sensing and the like. With the continuous development of semiconductor technology, monochromatic infrared detectors cannot meet the requirements of higher integration and more functions, and therefore, the development of dual-band and even multi-band window detectors is in force. Compared with a monochromatic detector, the two-color and multi-color detectors have obvious advantages for identifying complex targets in complex environments, have higher detection rate and lower false alarm rate, and are one of the trends of the development of infrared detectors.
The two-color infrared detector widely used at present mainly adopts an MBE means, different absorption layers are vertically superposed during the epitaxial growth, and the detection of two wave bands is respectively controlled by applying different bias voltages. Compared with the traditional monochromatic infrared detector, the double-color infrared detector has higher material growth difficulty and more complex device preparation process, three electrodes need to be led out through multiple times of corrosion to form a three-terminal device, and the double-color infrared detector is incompatible with a standard focal plane preparation process, so that an infrared focal plane reading circuit prepared based on the double-color infrared detector is more complex.
Disclosure of Invention
In view of the above, the present invention is directed to a microcavity coupled two-color quantum cascade infrared detector and a method for manufacturing the same, so as to at least partially solve at least one of the above-mentioned technical problems.
In order to achieve the purpose, the technical scheme of the invention comprises the following steps:
as an aspect of the present invention, there is provided a microcavity-coupled two-color quantum cascade infrared detector, comprising:
a semiconductor substrate;
a plurality of first microcavity bosses formed on the semiconductor substrate;
a plurality of second microcavity bosses formed on the semiconductor substrate;
the first microcavity boss and the second microcavity boss are used for respectively absorbing infrared light with two different wavelengths;
the plurality of first microcavity bosses are connected through first connecting lines;
the plurality of second microcavity bosses are connected through second connecting lines;
the first microcavity boss and the second microcavity boss respectively comprise a lower metal layer, a lower contact layer, an active layer, an upper contact layer and an upper metal layer which are sequentially arranged from bottom to top;
the first connecting line and the second connecting line respectively comprise a lower metal layer and an upper metal layer which are sequentially arranged from bottom to top;
a lower electrode, wherein a region of the lower metal layer on the semiconductor substrate except for the first connection line, the second connection line, the plurality of first microcavity projections, and the plurality of second microcavity projections is defined as the lower electrode;
the first upper electrode is formed on the lower electrode and is connected with the first microcavity boss through the first connecting line;
and the second upper electrode is formed on the lower electrode and is connected with the second microcavity boss through the second connecting wire.
As another aspect of the present invention, there is also provided a method for preparing a microcavity-coupled two-color quantum cascade infrared detector, comprising:
sequentially extending an initial upper contact layer, an initial active layer and an initial lower contact layer on a semi-insulating substrate;
forming a semi-insulating substrate metal layer on the lower contact layer;
forming a semiconductor substrate metal layer on a semiconductor substrate;
carrying out crystal orientation alignment on the semi-insulating substrate metal layer and the semiconductor substrate metal layer;
bonding the semi-insulating substrate metal layer aligned with the crystal direction with the semiconductor substrate metal layer to form a lower metal layer;
removing the semi-insulating substrate to expose the initial upper contact layer;
forming a patterned photoresist on the initial upper contact layer by using an electron beam exposure process, wherein a device pattern area is formed in an exposed area of the initial upper contact layer except the photoresist;
extending an initial upper metal layer on the photoresist and the device pattern region;
forming a mask layer on the position, opposite to the device pattern area, of the initial upper metal layer;
sequentially removing areas, except the mask layer opposite positions, on the initial upper metal layer, the initial upper contact layer, the initial active layer and the initial lower contact layer by taking the mask layer as a mask until the lower metal layer is exposed;
removing the mask layer to form a first connecting line, a second connecting line, a plurality of first microcavity bosses and a plurality of second microcavity bosses;
taking the exposed areas of the lower metal layer except the first connecting line, the second connecting line, the first microcavity bosses and the second microcavity bosses as lower electrodes;
and forming a first upper electrode and a second upper electrode on the lower electrode to obtain the microcavity-coupled two-color quantum cascade infrared detector.
Based on the technical scheme, compared with the prior art, the invention has at least one or one part of the following beneficial effects:
1. because the first micro-cavity boss and the second micro-cavity boss which are used for respectively absorbing infrared light with two different wavelengths are arranged in the same active layer of the double-color quantum cascade infrared detector with micro-cavity coupling, the coupling efficiency is improved;
2. the microcavity boss is of a layered structure which sequentially comprises a lower metal layer, a lower contact layer, an active layer, an upper contact layer and an upper metal layer from bottom to top, so that the limitation of the selective transition rule of a quantum device is overcome, normal incidence is realized, and the technical effect compatible with the focal plane process can be realized;
3. by changing the connection relationship between the first micro-cavity boss in the chain shape and the external measuring circuit and the connection relationship between the second micro-cavity boss in the chain shape and the external measuring circuit, infrared signals of two wave bands can be simultaneously led out, and infrared signals of one wave band can also be respectively and independently led out;
4. because the first micro-cavity boss and the second micro-cavity boss for absorbing infrared waves are formed on the semiconductor substrate at the same time, compared with a bicolor detector in the prior art, the preparation process is simplified.
Drawings
Fig. 1 is a schematic structural diagram of a microcavity-coupled two-color quantum cascade infrared detector according to an embodiment of the present invention;
fig. 2 is a cross-sectional view of the microcavity-coupled dual-color quantum cascade infrared detector shown in fig. 1, which only includes a first microcavity boss or a second microcavity boss;
fig. 3 is a schematic diagram illustrating an arrangement of a first microcavity boss, a second microcavity boss, a first connection line, a second connection line, a first upper electrode, and a second upper electrode according to an embodiment of the present invention;
fig. 4 is a schematic diagram illustrating an arrangement of a first microcavity boss, a second microcavity boss, a first connecting line, a second connecting line, a first upper electrode, and a second upper electrode according to another embodiment of the present invention;
fig. 5 is a schematic diagram illustrating an arrangement of a first microcavity boss, a second microcavity boss, a first connecting line, a second connecting line, a first upper electrode, and a second upper electrode according to another embodiment of the present invention;
fig. 6 is a schematic diagram of a quantum well layer of one cycle cascade of active layers provided by an embodiment of the invention; and
fig. 7 is a flowchart of a method for manufacturing a microcavity-coupled two-color quantum cascade infrared detector according to an embodiment of the present invention.
Detailed Description
The invention provides a microcavity-coupled two-color quantum cascade infrared detector which comprises a semiconductor substrate, a plurality of first microcavity bosses, a plurality of second microcavity bosses, a lower electrode, a first upper electrode and a second upper electrode.
A semiconductor substrate;
a plurality of first microcavity bosses formed on the semiconductor substrate;
a plurality of second microcavity bosses formed on the semiconductor substrate;
the first microcavity boss and the second microcavity boss are used for respectively absorbing infrared light with two different wavelengths;
the plurality of first microcavity bosses are connected through first connecting lines;
the plurality of second microcavity bosses are connected through second connecting lines;
the first microcavity boss and the second microcavity boss respectively comprise a lower metal layer, a lower contact layer, an active layer, an upper contact layer and an upper metal layer which are sequentially arranged from bottom to top;
the first connecting line and the second connecting line respectively comprise a lower metal layer and an upper metal layer which are sequentially arranged from bottom to top;
a lower electrode, wherein a lower metal layer region on the semiconductor substrate except the first connecting line, the second connecting line, the first microcavity bosses and the second microcavity bosses is defined as the lower electrode;
the first upper electrode is formed on the lower electrode and is connected with the first microcavity boss through a first connecting wire;
and the second upper electrode is formed on the lower electrode and is connected with the second micro-cavity boss through a second connecting wire.
The absorption region of the infrared wave of the microcavity-coupled two-color quantum cascade infrared detector provided by the embodiment of the invention is of a planar structure, and particularly, the first microcavity boss and the second microcavity boss which are used for respectively absorbing infrared light with two different wavelengths are arranged in the same active layer of the microcavity-coupled two-color quantum cascade infrared detector, so that the technical problem of low coupling efficiency of the detector caused by the fact that the infrared wave absorption region is of a vertical structure in the prior art is solved, and the effect of improving the coupling efficiency of the detector is realized.
The components and structure of the microcavity-coupled two-color quantum cascade infrared detector according to the embodiment of the present invention are described in detail below with reference to the accompanying drawings.
In the following description, specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be embodied in many different forms other than those described herein, and it will be apparent to those skilled in the art that the present invention may be embodied in many different forms without departing from the spirit or scope of the present invention. The invention is therefore not limited to the specific implementations disclosed below.
Fig. 1 is a schematic structural diagram of a microcavity-coupled two-color quantum cascade infrared detector according to an embodiment of the present invention.
Fig. 2 is a cross-sectional view of the microcavity-coupled dual-color quantum cascade infrared detector provided in fig. 1, which includes only one microcavity boss.
Referring to fig. 1 and 2, the invention provides a microcavity-coupled two-tone quantum cascade infrared detector, which comprises a semiconductor substrate 1, a plurality of first microcavity bosses 5, a plurality of second microcavity bosses 6, a lower electrode 2, a first upper electrode 3 and a second upper electrode 4.
A plurality of first microcavity mesas 5 are formed on the semiconductor substrate 1.
And a plurality of second microcavity bosses 6 formed on the semiconductor substrate 1.
The first microcavity boss 5 and the second microcavity boss 6 are used for respectively absorbing two infrared lights with different wavelengths.
According to the embodiment of the invention, the first microcavity boss 5 and the second microcavity boss 6 for absorbing infrared light with two different wavelengths are both formed in the same absorption layer, namely, the first microcavity boss 5 and the second microcavity boss 6 are both formed on the semiconductor substrate 1, so that the effect of improving the coupling efficiency of the detector is realized.
The plurality of first microcavity bosses 5 are connected by first connecting lines 7.
The second microcavity bosses 6 are connected by second connecting lines 8.
According to an embodiment of the present invention, the first connection lines 7 and the second connection lines 8 connect the plurality of first microcavity bosses 5 and the plurality of second microcavity bosses 6, respectively, and in addition, the first connection lines 7 and the second connection lines 8 also serve to electrically conduct.
The first microcavity boss 5 and the second microcavity boss 6 respectively include a lower metal layer, a lower contact layer 501, an active layer 503, an upper contact layer 504 and an upper metal layer 505, which are sequentially arranged from bottom to top.
The first connection line and the second connection line respectively include a lower metal layer and an upper metal layer 505 sequentially arranged from bottom to top.
According to the embodiment of the present invention, since the first connection line includes the lower metal layer and the upper metal layer 505 sequentially arranged from bottom to top, the plurality of first microcavity bosses can be electrically connected.
According to the embodiment of the present invention, since the second connection line includes the lower metal layer and the upper metal layer 505 sequentially arranged from bottom to top, the plurality of second microcavity bosses can be electrically connected.
According to an embodiment of the present invention, the first connection line 7 and the second connection line 8 may have the same structure as the first microcavity boss 5 and the second microcavity boss 6; the materials of the first connecting line 7 and the second connecting line 8 may be the same as those of the first microcavity boss 5 and the second microcavity boss 6.
And a lower electrode 2, wherein a region of the lower metal layer on the semiconductor substrate 1 except for the first connection line 7, the second connection line 8, the plurality of first microcavity projections 5 and the plurality of second microcavity projections 6 is defined as the lower electrode.
And a first upper electrode 3 formed on the lower electrode 2 and connected to the first microcavity boss 5 through a first connecting line 7.
And the second upper electrode 4 is formed on the lower electrode 2 and is connected with the second microcavity boss 6 through a second connecting wire 8.
According to the embodiment of the present invention, the detector provided in the embodiment of the present invention can absorb infrared waves of two bands simultaneously, or can absorb infrared waves of only one band, specifically, when it is required to absorb infrared waves of two bands simultaneously, both the first upper electrode 3 and the second upper electrode 4 can be connected to an external measurement circuit (not shown) through leads; when it is required to absorb only one band of infrared waves, only the first upper electrode 3 or the second upper electrode 4 may be connected to an external measurement circuit through a lead wire.
According to the embodiment of the present invention, the cross section of the first microcavity boss 5 includes any one of a square shape and a diamond shape; the cross section of the second microcavity boss 6 includes any one of a square and a diamond.
According to an alternative embodiment of the invention, the cross-section of the first microcavity bosses 5 may be square.
According to an alternative embodiment of the invention, the cross-section of the second microcavity bosses 5 may be square.
According to an embodiment of the present invention, the side length of the cross section of the first microcavity boss 5 is not equal to the side length of the cross section of the second microcavity boss 6.
According to the embodiment of the invention, the side length of the cross section of the microcavity boss can be represented by a standing wave condition formula
Calculated, where s represents the elongation of the cross-section of the microcavity boss, λ is the wavelength of the infrared wave absorbed by the detector, and neffIs the effective refractive index of the active layer 502, and K represents a positive integer. Based on this, when the side length of the cross section of the first microcavity boss 5 is not equal to the side length of the cross section of the second microcavity boss 6, the detector can absorb infrared waves of two different wavelengths respectively.
According to the embodiment of the invention, the ratio of the response intensity of the detector to infrared waves with different wavelengths can be adjusted by changing the side length of the cross section of the microcavity boss.
According to embodiments of the present invention, the length of a side of the cross-section of the microcavity mesa may be of
Positive integer multiples of.
According to an embodiment of the present invention, when the length of the side of the cross section of the microcavity boss is
The absorption rate of the detector to the infrared waves can be enhanced, the response intensity of the detector to the infrared waves is improved, and the fault tolerance rate of the detector to the absorption of the infrared waves is improved.
According to the embodiment of the invention, the microcavity-coupled two-color quantum cascade infrared detector comprises a plurality of groups of first microcavity bosses 5; each group of the first microcavity bosses 5 comprises a plurality of chained first microcavity bosses 5;
the microcavity-coupled two-color quantum cascade infrared detector comprises a plurality of groups of second microcavity bosses 6; each set of second microcavity bosses 6 includes a plurality of second microcavity bosses 6 in the form of chains.
The embodiment of the present invention does not specifically limit the arrangement of the first microcavity boss 5, the second microcavity boss 6, the first connecting line 7, the second connecting line 8, the first upper electrode 3, and the second upper electrode 4.
According to an embodiment of the present invention, the first upper electrode 3 and the second upper electrode 4 may be oppositely disposed (as shown in fig. 3 and 5), but is not limited thereto, and the first upper electrode 3 and the second upper electrode 4 may also be disposed in parallel (as shown in fig. 4).
According to the embodiment of the present invention, when the first upper electrode 3 and the second upper electrode 4 are oppositely disposed, the plurality of first connection lines 7 and the plurality of second connection lines 8 may be staggered one by one as shown in fig. 5, but is not limited thereto, and may also be staggered in the manner shown in fig. 3.
According to an embodiment of the present invention, the shape of the first upper electrode 3 may include an irregular shape (as shown in fig. 3), but is not limited thereto, and the shape of the first upper electrode 3 may also include a rectangle (as shown in fig. 4 and 5), a circle, a square, or a diamond.
According to an embodiment of the present invention, the shape of the second upper electrode 4 may include an ellipse (as shown in fig. 3), but is not limited thereto, and the shape of the second upper electrode 4 may also include a rectangle (as shown in fig. 4 and 5), an irregular shape, a circle, a square, or a diamond.
According to the embodiment of the present invention, the relative sizes of the first upper electrode 3 and the second upper electrode 4 are not particularly limited in the embodiment of the present invention, and the area of the first upper electrode 3 may be larger than the area of the second upper electrode 4 (as shown in fig. 3), but is not limited thereto, the area of the first upper electrode 3 may also be smaller than the area of the second upper electrode 4 (as shown in fig. 4), and the area of the first upper electrode 3 may also be equal to the area of the second upper electrode 4 (as shown in fig. 5).
According to the embodiment of the present invention, the connection manner of the plurality of first microcavity bosses 5 and the first connection lines 7 is not particularly limited.
According to an alternative embodiment of the present invention, the first connection line 7 may be perpendicular to the edge of the first microcavity boss 5 (as shown in fig. 3), but is not limited thereto, and the first connection line 7 may also be angled to the edge of the microcavity boss (as shown in fig. 4, 5).
According to the embodiment of the present invention, the connection manner of the plurality of second microcavity bosses 6 and the second connection lines 8 is not particularly limited.
According to an alternative embodiment of the present invention, the second connection line 8 may be perpendicular to the edge of the second microcavity boss 6 (as shown in fig. 3), but is not limited thereto, and the second connection line 8 may also be angled to the edge of the microcavity boss (as shown in fig. 4, 5).
According to the embodiment of the present invention, the plurality of first connecting lines 7 may be all straight lines (as shown in fig. 3 and 4), but is not limited thereto, and the plurality of first connecting lines 7 may also be all curved lines (as shown in fig. 5).
According to an embodiment of the present invention, the plurality of first microcavity bosses 5 connected by the first connecting line 7 may be uniformly distributed on the first connecting line 7 (as shown in fig. 3 and 4), but is not limited thereto, and the plurality of first microcavity bosses 5 connected by the first connecting line 7 may also be non-uniformly distributed on the first connecting line 7 (as shown in fig. 5).
According to an embodiment of the present invention, the plurality of second microcavity bosses 6 of the second connection line connection 8 may be uniformly distributed on the second connection line 8 (as shown in fig. 3 and 4), but is not limited thereto, and the plurality of second microcavity bosses 6 of the second connection line connection 8 may also be non-uniformly distributed on the second connection line 8 (as shown in fig. 5).
According to an embodiment of the present invention, when the detector receives infrared light, plasmons are formed on the interface between the lower metal layer and the lower contact layer 501 and/or on the interface between the upper metal layer 504 and the upper contact layer 503; the thickness of the lower metal layer is larger than a first penetration depth, wherein the first penetration depth is the penetration depth of a plasmon in the lower metal layer; the thickness of the upper metal layer 504 is greater than a second penetration depth, wherein the second penetration depth is the penetration depth of plasmons in the upper metal layer 504.
According to the embodiment of the invention, because the thickness of the upper metal layer 504 and the thickness of the lower metal layer are both larger than the penetration depth of the plasmon, the energy of infrared waves can be localized in the microcavity boss, and the absorption efficiency of the detector on the infrared waves is improved.
Fig. 6 is a schematic diagram of a quantum well layer of one cycle cascade of active layers according to an embodiment of the present invention.
According to an embodiment of the present invention, as shown in fig. 6, the active layer includes a single-period cascade of quantum well layers or a multi-period cascade of quantum well layers, each of the quantum well layers including:
and the first transition channel is used for enabling the electrons to transition from the ground state to a first excited state, wherein the first excited state and the ground state are in the same quantum well, and a first energy interval is formed between the first excited state and the ground state.
According to an embodiment of the present invention, referring to fig. 6, the quantum well ground state may be that electrons are in the a state of fig. 6, and the first excited state may be that electrons are in the b state of fig. 6.
And a second transition channel for transitioning the electron from the ground state to a second excited state, wherein the second excited state is in the quantum well adjacent to the ground state, and a second energy interval exists between the second excited state and the ground state.
According to an embodiment of the present invention, referring to fig. 6, the quantum well ground state may be that electrons are in the a state in fig. 6, and the second excited state may be that electrons are in the c state in fig. 6.
According to an embodiment of the invention, the second energy interval is smaller than the first energy interval.
According to an embodiment of the present invention, according to the formula E ═ hv ═ hc/λ, where E denotes an energy interval, h denotes a planck coefficient, v denotes a frequency of infrared light, c denotes a speed of light, and λ denotes a wavelength of the infrared light; based on this, the energy separation between the ground and excited states determines the size of the wavelength, and thus the size of the wavelength that the active layer of the detector can absorb.
According to the embodiment of the present invention, because there are two transition paths for electrons in the quantum well of the active layer provided in the embodiment of the present invention, that is, electrons can transition from the ground state a to the first excited state b and can also transition from the ground state a to the second excited state c, and there is a first energy interval when electrons transition from the ground state a to the first excited state b and a second energy interval when electrons transition from the ground state a to the second excited state c, the active layer of the detector provided in the embodiment of the present invention can absorb infrared waves of two different wavelengths because the first energy interval is different from the second energy interval.
According to the embodiment of the present invention, since the energy interval of the transition of the electrons from the ground state a to the first excited state b is greater than the energy interval of the transition of the electrons from the ground state b to the second excited state c, the wavelength of the infrared wave that can be absorbed by the active layer when the electrons transition from the ground state a to the first excited state b is longer than the wavelength of the infrared wave that can be absorbed by the active layer when the electrons transition from the ground state b to the second excited state c.
According to an embodiment of the invention, each quantum well layer further comprises a coupling microstrip and an energy step to transport electrons transitioning to the first excited state and/or the second excited state to the next periodic cascade of quantum well layers.
According to an embodiment of the present invention, referring to fig. 6, the coupling microstrip may be a coupling microstrip shown as d in fig. 6, and the energy step may be an energy step consisting of e, f, and g in fig. 6.
According to an embodiment of the present invention, the active layer may include a single-period cascaded quantum well layer and/or a multi-period cascaded quantum well layer; the g-state of the energy step may be the ground state of the quantum well for the next cycle.
According to the embodiment of the invention, after infrared light irradiates on the detector, electrons positioned in the ground state of the quantum well absorb the energy of infrared waves in the infrared light, transition to an excited state, and are conveyed to the next period along the energy step, so that no external bias voltage is required when the detector works.
According to the embodiment of the invention, because the electrons in the quantum material need to follow the intersubband selective transition rule when being transited from the ground state to the excited state, namely, only the infrared wave of the incident light with the electric field component in the direction vertical to the active layer can be absorbed by the active layer, the detector provided by the embodiment of the invention can perform polarization state modulation on the incident light with the electric field vector parallel to the active layer, so that the incident light generates the electric field component vertical to the active layer, and the electric field component vertical to the active layer can be used for exciting the electrons in the quantum well of the active layer to generate intersubband transition so as to meet the infrared wave absorption condition of the quantum well, therefore, the detector provided by the embodiment of the invention overcomes the intersubband selective transition rule of the quantum device.
According to an embodiment of the present invention, the thickness of the active layer 502 is less than or equal to the attenuation distance of the plasmon.
According to an embodiment of the present invention, the material of the active layer 502 includes InGaAs/InAlAs or GaAs/AlGaAs.
According to the embodiment of the present invention, the material of the active layer 502 includes InGaAs/InAlAs or GaAs/AlGaAs, and the thickness of the active layer 502 may be greater than the attenuation distance of plasmons in the active layer 502, so that the coupling of the upper metal layer 504 and the lower metal layer of the microcavity mesa may be ensured, and the energy of the infrared wave is localized within the microcavity mesa.
According to an embodiment of the present invention, the material of the upper and lower metal layers 504 and 504 may include a metal having weak absorption to infrared waves, thereby having a large negative refractive index to infrared waves.
According to an embodiment of the invention, the material of the lower metal layer comprises one or more of Au, Ag, Al.
According to an alternative embodiment of the present invention, the material of the lower metal layer may be Au, thereby facilitating the preparation of the lower metal layer.
The material of the upper metal layer 504 includes one or more of Au, Ag, and Al.
According to an embodiment of the present invention, the material of the upper metal layer 504 includes one or more of Au, Ag, Al.
According to an alternative embodiment of the present invention, the material of the upper metal layer 504 may be Au, thereby facilitating the preparation of the upper metal layer 504.
According to an embodiment of the present invention, the material of the metal of the upper surfaces of the first and second upper electrodes 3 and 4 may be the same as that of the upper metal layer 504.
Fig. 7 is a flowchart of a method for manufacturing a microcavity-coupled two-color quantum cascade infrared detector according to an embodiment of the present invention.
As shown in fig. 7, another aspect of the embodiment of the present invention further provides a method for preparing a microcavity-coupled two-color quantum cascade infrared detector, including operations S701 to S7013.
In operation S701, an initial upper contact layer, an initial active layer, and an initial lower contact layer are sequentially epitaxially grown on a semi-insulating substrate.
In operation S702, a semi-insulating substrate metal layer is formed at the initial lower contact layer.
In operation S703, a semiconductor substrate metal layer is formed on the semiconductor substrate.
In operation S704, the semi-insulating substrate metal layer is aligned with the semiconductor substrate metal layer.
In operation S705, the semi-insulating substrate metal layer aligned with the crystal orientation is bonded to the semiconductor substrate metal layer to form a lower metal layer.
In operation S706, the semi-insulating substrate is removed to expose the initial upper contact layer.
According to the embodiment of the invention, the semi-insulating substrate can be firstly physically thinned to a preset thickness, and then the semi-insulating substrate which is physically thinned is corroded by using the selective corrosive liquid until the upper contact layer is exposed.
In operation S707, a patterned photoresist is formed on the preliminary upper contact layer using an electron beam exposure process, wherein an exposed region of the preliminary upper contact layer except the photoresist forms a device pattern region.
An initial upper metal layer is epitaxially grown on the photoresist and the device pattern region in operation S708.
In operation S709, a mask layer is formed on the initial upper metal layer at a position directly opposite to the device pattern region.
According to embodiments of the present invention, the mask layer may include a mask formed by sputtering silicon dioxide on the initial upper metal layer.
In operation S710, the mask layer is used as a mask, and regions other than the mask layer facing positions on the initial upper metal layer, the initial upper contact layer, the initial active layer, and the initial lower contact layer are sequentially removed until the lower metal layer is exposed.
According to the embodiment of the present invention, the regions except for the mask layer facing positions on the initial upper metal layer, the initial upper contact layer, the initial active layer, and the initial lower contact layer may be sequentially removed using a dry etching process, but is not limited thereto, and the regions except for the mask layer facing positions on the initial upper metal layer, the initial upper contact layer, the initial active layer, and the initial lower contact layer may be sequentially removed using hydrofluoric acid.
In operation S711, the mask layer is removed to form a first connection line, a second connection line, a plurality of first microcavity bosses, and a plurality of second microcavity bosses.
According to embodiments of the present invention, the mask layer may be removed using a dry etching process.
In operation S712, the exposed regions of the lower metal layer except for the first connection line, the second connection line, the plurality of first microcavity bosses and the plurality of second microcavity bosses are used as lower electrodes.
In operation S713, a first upper electrode and a second upper electrode are formed on the lower electrode, so as to obtain a microcavity-coupled two-color quantum cascade infrared detector.
According to the embodiment of the invention, after the microcavity-coupled double-color quantum cascade infrared detector is obtained, the semiconductor substrate of the microcavity-coupled double-color quantum cascade infrared detector can be thinned and polished to a certain thickness, and then the microcavity-coupled double-color quantum cascade infrared detector is cleaved, so that the preparation process of the microcavity-coupled double-color quantum cascade infrared detector is completed.
The microcavity-coupled two-color quantum cascade detector provided by the embodiment of the invention has a simple structure, the absorption region of infrared waves is a planar structure, the microcavity-coupled two-color quantum cascade detector is similar to a traditional monochromatic quantum cascade infrared detector, the microcavity-coupled two-color quantum cascade detector has no difference with a conventional monochromatic quantum cascade infrared detector in the preparation process of the detector, the limit of the intersubband selective transition rule of quantum devices is overcome, the normal incidence of the infrared waves is realized, and the preparation process of the detector can be compatible with the focal plane process.
The detector provided by the embodiment of the invention can lead out the infrared signals of two wave bands simultaneously and can also lead out the infrared signal of one wave band separately. The absorption of the detector to the infrared waves of two wave bands occurs in the same active layer, so that the problem of low coupling efficiency caused by the fact that the absorption region of the infrared waves is in a vertical structure in the prior art is solved. The microcavity-coupled two-color quantum cascade detector provided by the embodiment of the invention has simplified structure and process, so that the structure and process of the microcavity-coupled two-color quantum cascade detector provided by the embodiment of the invention can be more widely applied, and have great significance in promoting the development of two-color infrared detectors.
The above embodiments are provided to further explain the objects, technical solutions and advantages of the present invention in detail, and it should be understood that the above embodiments are only examples of the present invention and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A microcavity-coupled two-tone quantum cascade infrared detector is characterized by comprising:
a semiconductor substrate;
a plurality of first microcavity bosses formed on the semiconductor substrate;
a plurality of second microcavity bosses formed on the semiconductor substrate;
the first microcavity boss and the second microcavity boss are used for respectively absorbing infrared light with two different wavelengths;
the plurality of first microcavity bosses are connected through first connecting lines;
the plurality of second microcavity bosses are connected through second connecting lines;
the first microcavity boss and the second microcavity boss respectively comprise a lower metal layer, a lower contact layer, an active layer, an upper contact layer and an upper metal layer which are sequentially arranged from bottom to top;
the first connecting line and the second connecting line respectively comprise a lower metal layer and an upper metal layer which are sequentially arranged from bottom to top;
a lower electrode, wherein a region of the lower metal layer on the semiconductor substrate except for the first connection line, the second connection line, the plurality of first microcavity projections, and the plurality of second microcavity projections is defined as the lower electrode;
the first upper electrode is formed on the lower electrode and is connected with the first microcavity boss through the first connecting line;
and the second upper electrode is formed on the lower electrode and is connected with the second microcavity boss through the second connecting wire.
2. The dual color quantum cascade infrared detector of claim 1,
the cross section of the first micro-cavity boss comprises any one of a square shape and a diamond shape;
the cross section of the second microcavity boss comprises any one of a square shape and a diamond shape.
3. The dual color quantum cascade infrared detector of claim 2,
the side length of the cross section of the first micro-cavity boss is not equal to that of the cross section of the second micro-cavity boss.
4. The dual color quantum cascade infrared detector of claim 1,
the microcavity-coupled two-color quantum cascade infrared detector comprises a plurality of groups of first microcavity bosses; each group of first microcavity bosses comprises a plurality of chained first microcavity bosses;
the microcavity-coupled two-color quantum cascade infrared detector comprises a plurality of groups of second microcavity bosses; each group of second microcavity bosses comprises a plurality of chained second microcavity bosses.
5. The two-color quantum cascade infrared detector of claim 2, wherein:
forming plasmons on an interface between the lower metal layer and the lower contact layer and/or on an interface between the upper metal layer and the upper contact layer when the detector receives infrared light; wherein the content of the first and second substances,
the thickness of the lower metal layer is greater than a first penetration depth, wherein the first penetration depth is the penetration depth of the plasmons in the lower metal layer;
the thickness of the upper metal layer is greater than a second penetration depth, wherein the second penetration depth is a penetration depth of the plasmons in the upper metal layer.
6. The two-color quantum cascade infrared detector of claim 5, wherein:
the thickness of the active layer is less than or equal to the attenuation distance of the plasmon.
7. The dual-color quantum cascade infrared detector of claim 1, wherein the active layer comprises a single-cycle cascade of quantum well layers or a multi-cycle cascade of quantum well layers, each of the quantum well layers comprising:
a first transition channel for transitioning an electron from a ground state to a first excited state, wherein the first excited state and the ground state are in the same quantum well and a first energy gap is formed between the first excited state and the ground state;
a second transition channel for transitioning the electron from a ground state to a second excited state, wherein the second excited state is in a quantum well adjacent to the ground state, and wherein the second excited state is separated from the ground state by a second energy gap;
wherein the second energy interval is less than the first energy interval.
8. The dual-color quantum cascade infrared detector of claim 7, wherein each quantum well layer further comprises a coupling microstrip and an energy step to transport electrons that transition to the first excited state and/or the second excited state to a next periodically cascaded quantum well layer.
9. The dual color quantum cascade infrared detector of claim 1,
the material of the active layer comprises InGaAs/InAlAs or GaAs/AlGaAs;
the material of the lower metal layer comprises one or more of Au, Ag and Al;
the material of the upper metal layer comprises one or more of Au, Ag and Al.
10. A method for preparing a microcavity-coupled two-color quantum cascade infrared detector according to any one of claims 1 to 9, comprising:
sequentially extending an initial upper contact layer, an initial active layer and an initial lower contact layer on a semi-insulating substrate;
forming a semi-insulating substrate metal layer on the lower contact layer;
forming a semiconductor substrate metal layer on a semiconductor substrate;
carrying out crystal orientation alignment on the semi-insulating substrate metal layer and the semiconductor substrate metal layer;
bonding the semi-insulating substrate metal layer aligned with the crystal direction with the semiconductor substrate metal layer to form a lower metal layer;
removing the semi-insulating substrate to expose the initial upper contact layer;
forming a patterned photoresist on the initial upper contact layer by using an electron beam exposure process, wherein a device pattern area is formed in an exposed area of the initial upper contact layer except the photoresist;
extending an initial upper metal layer on the photoresist and the device pattern region;
forming a mask layer on the position, opposite to the device pattern area, of the initial upper metal layer;
sequentially removing areas, except the mask layer opposite positions, on the initial upper metal layer, the initial upper contact layer, the initial active layer and the initial lower contact layer by taking the mask layer as a mask until the lower metal layer is exposed;
removing the mask layer to form a first connecting line, a second connecting line, a plurality of first microcavity bosses and a plurality of second microcavity bosses;
taking the exposed areas of the lower metal layer except the first connecting line, the second connecting line, the first microcavity bosses and the second microcavity bosses as lower electrodes;
and forming a first upper electrode and a second upper electrode on the lower electrode to obtain the microcavity-coupled two-color quantum cascade infrared detector.
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| CN101894876A (en) * | 2010-06-04 | 2010-11-24 | 中国科学院半导体研究所 | Structure of quantum cascade detector |
| US20160351732A1 (en) * | 2014-01-07 | 2016-12-01 | Universite Paris Diderot Paris 7 | Semiconductor photodetector |
| CN108428762A (en) * | 2018-04-26 | 2018-08-21 | 中国科学院上海微系统与信息技术研究所 | A kind of microcavity array coupled structure and preparation method thereof for quantum well detector |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101894876A (en) * | 2010-06-04 | 2010-11-24 | 中国科学院半导体研究所 | Structure of quantum cascade detector |
| US20160351732A1 (en) * | 2014-01-07 | 2016-12-01 | Universite Paris Diderot Paris 7 | Semiconductor photodetector |
| CN108428762A (en) * | 2018-04-26 | 2018-08-21 | 中国科学院上海微系统与信息技术研究所 | A kind of microcavity array coupled structure and preparation method thereof for quantum well detector |
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