CN113227451A - Susceptor assembly, MOCVD apparatus including the same, and control method for leading out upper susceptor from MOCVD apparatus - Google Patents

Susceptor assembly, MOCVD apparatus including the same, and control method for leading out upper susceptor from MOCVD apparatus Download PDF

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Publication number
CN113227451A
CN113227451A CN201980086410.3A CN201980086410A CN113227451A CN 113227451 A CN113227451 A CN 113227451A CN 201980086410 A CN201980086410 A CN 201980086410A CN 113227451 A CN113227451 A CN 113227451A
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base
susceptor
upper base
assembly
induction coil
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CN201980086410.3A
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CN113227451B (en
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崔成哲
赵广一
朴兵益
金南绪
张钟珍
徐东湜
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TES Co Ltd
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TES Co Ltd
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    • H—ELECTRICITY
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    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02183—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing tantalum, e.g. Ta2O5
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Abstract

The present invention relates to a susceptor assembly and an MOCVD apparatus including the same, wherein the susceptor assembly reduces temperature deviation on a support surface by a double-layer structure of an upper susceptor and a lower susceptor. A base assembly according to an embodiment of the present invention includes: a susceptor having a support surface that contacts a substrate and supports the substrate; and a lower base supporting the upper base, the upper base and the lower base being coated with different kinds of substances from each other. According to the susceptor assembly and the MOCVD apparatus including the same of the present invention, it is possible to grow a thin film having more uniform characteristics on a substrate by reducing temperature non-uniformity on a support surface supporting the substrate, and it is possible to obtain high yield in manufacturing an element using the substrate grown by the MOCVD process.

Description

Susceptor assembly, MOCVD apparatus including the same, and control method for leading out upper susceptor from MOCVD apparatus
Technical Field
The present invention relates to a susceptor assembly, an MOCVD apparatus including the same, and a control method for extracting an upper susceptor from the MOCVD apparatus, and more particularly, to a susceptor assembly that reduces temperature deviation on a support surface by a double-layered structure of an upper susceptor and a lower susceptor, an MOCVD apparatus including the same, and a control method for extracting an upper susceptor from the MOCVD apparatus.
Background
Chemical Vapor Deposition (CVD) is a technique in which a raw material gas is flowed onto a substrate to be coated, and the raw material gas is decomposed by applying external energy, thereby forming a thin film by a Vapor-phase Chemical reaction.
In order to normally perform the chemical reaction, it is necessary to closely control various process conditions and environments, and to supply energy for activation so that the raw material gas spontaneously causes the chemical reaction.
Chemical vapor deposition can be classified into LPCVD (Low Pressure CVD) using a Low Pressure of several to several hundred mTorr, PECVD (Plasma-Enhanced CVD) using Plasma to activate a raw material gas, MOCVD (Metal-Organic CVD) using a gas molecule in the form of an Organic reactive group bonded to a Metal element as a raw material, and the like.
The MOCVD apparatus is an apparatus that mixes a group III alkyl (organic metal material gas) and a group V material gas with a high-purity carrier gas, supplies the mixture into a reaction chamber, and thermally decomposes the mixture on a heated substrate to grow a compound semiconductor crystal.
Fig. 1 is a schematic cross-sectional view showing a reactor configuration of a conventional MOCVD apparatus.
Referring to fig. 1, a reactor 10 of a conventional MOCVD apparatus is configured to include: a reaction chamber 1 into which a reaction gas flows to perform a reaction and then flows out; a susceptor (susceptor)2 supporting the substrate W such that the substrate W is exposed to the reaction chamber 1; and a heating means 3 for applying heat to the susceptor 2.
Since the substrate W needs to be heated to a high temperature in order to react the reaction gas on the substrate W, the susceptor 2 may be heated by a heating tool 3 of a thermal resistance type or an induction heating type, thereby heating the substrate W.
Among them, a resistance heating type heater using a hot wire of a metal material such as tungsten, rhenium, or the like may be used as the heating tool 3, but there is a problem that the life is short under the process condition in the ultra high temperature region exceeding 1200 ℃. Thus, it is not suitable for a large-capacity and large-area manufacturing process requiring an ultra-high temperature.
In order to solve such a problem, a heating tool of an induction heating type is being used as a main heating tool in an ultra high temperature apparatus exceeding 1200 ℃. The temperature variation on the supporting surface of the supporting substrate can be reduced by using the heating tool of the induction heating type as compared with the conventional resistance heating type heater, but the temperature unevenness on the supporting surface of the substrate still remains.
The deposition rate and crystallinity of the thin film deposited on the substrate are greatly affected by the temperature of the substrate W, and particularly, the temperature uniformity of the supporting surface of the susceptor 2 on which the substrate W is mounted is the largest factor determining the uniformity of the thin film on the substrate.
In addition, since the requirement of the device manufacturers for the temperature uniformity tends to gradually increase as the design rule (design rule) of the device process is reduced recently, it can be said that the development of the induction heating susceptor having excellent temperature uniformity is a current issue in the industry.
On the other hand, in order to manufacture a light emitting diode and a laser diode that emit ultraviolet rays, a substance based on aluminum nitride (AlN) is generally used. In order to suppress TMA (Trimethyl Aluminum: trimethylaluminum) used as a precursor of Aluminum (precusor) and ammonia (NH) used as a precursor of nitrogen (N)3) Parasitic reaction of (2), NH is required to be converted3The flow of (c) is minimized, and in order to grow high quality aluminum nitride, growth at a high temperature of 1400 ℃ or more is required due to low Cracking (Cracking) efficiency of ammonia gas. In order to achieve such a temperature, a method of disposing a heat resistance type heater around the susceptor or self-heating the graphite material by an induction heating method is generally used.
However, in a high temperature region of 1400 ℃ or higher, the RF induction heating system is mainly used due to the durability problem of the aforementioned thermal resistance system heater.
As such an RF induction heating method, there are a flat (cascade) method in which an induction coil is disposed below a susceptor and a cascade (cascade) method in which an induction coil is disposed so as to wrap a side surface of the susceptor. The flat type mainly uses a circular plate-shaped susceptor, and the cascade type mainly uses a cylindrical susceptor.
In the case of the flat type, although excellent temperature uniformity can be obtained on the susceptor surface by uniform induction heating under the susceptor, the susceptor positioned outside the induction coil is induction-heated, and therefore, the induction heating efficiency is not good, and thus the temperature rise is limited. In contrast, in the case of the cascade system, since induction heating is performed inside the induction coil, it is advantageous to use a cylindrical susceptor for the induction coil of the cascade system in terms of thermal efficiency.
However, in the case of using the induction coil of the cascade system, when a cylindrical susceptor having a diameter of 100mm or more is used, there is a problem in that the temperature of the central portion of the upper surface of the susceptor is significantly lower than that of the outer peripheral portion due to imbalance of the induced current inside the susceptor. In addition, the diameter of the susceptor also shows a greater tendency for high productivity.
Namely, there are the following problems: the imbalance of the induced current causes temperature unevenness on the susceptor, which spreads to the temperature unevenness of the substrate placed on the susceptor supporting surface to cause a reduction in characteristic uniformity and a reduction in yield, whereby the manufacturing cost becomes high. Further, it is necessary to solve the problem that high thermal efficiency which can be achieved by the cascade type induction coil and high productivity using a susceptor having a larger diameter are difficult to achieve.
(patent document 1)
Korean patent No. 10-0676404 (temperature elevation control method for semiconductor substrate and apparatus therefor)
Disclosure of Invention
The present invention has been made to solve the above-described conventional problems, and an object of the present invention is to provide a susceptor assembly in which temperature variation on a support surface is reduced by a double-layer structure of an upper susceptor and a lower susceptor, an MOCVD apparatus including the same, and a control method for extracting the upper susceptor from the MOCVD apparatus.
The problems of the present invention are not limited to the above-mentioned ones, and other problems not mentioned can be clearly understood by those skilled in the art from the following description.
A base assembly according to an embodiment of the present invention for solving the problem includes: a susceptor having a support surface that contacts a substrate and supports the substrate; and a lower base supporting the upper base, the upper base and the lower base being coated with different kinds of substances from each other.
According to another feature of the present invention, the lower base is coated to have a lower emissivity than the upper base.
According to still another feature of the present invention, at least a portion of a surface of the upper susceptor is coated with Silicon Carbide (Silicon Carbide), and at least a portion of a surface of the lower susceptor is coated with Tantalum Carbide (Tantalum Carbide).
According to still another feature of the invention, the upper base is supported by the lower base with constraint in a direction along a contact surface with the lower base and without constraint in a direction perpendicular to the contact surface.
According to still another feature of the present invention, at least one protrusion is formed on any one of the upper base and the lower base, and at least one recess (accessed port) is formed on the other to enable assembly with the protrusion.
According to still another feature of the present invention, the convex portion is formed at a center of the lower base, the concave portion is formed at the upper base, and the convex portion is formed such that an area of a cross section of the convex portion gradually decreases as going from the lower base to an end portion.
According to still another feature of the present invention, the cross-sectional shape is formed in a polygonal shape at a portion adjacent to the lower base and in a circular shape at a portion adjacent to the end.
According to still another feature of the present invention, the cross-sectional shape is formed in a circular shape at a portion adjacent to the lower base and in a polygonal shape at a portion adjacent to the end.
According to still another feature of the present invention, the recessed portion has a long shape along an outer contour portion of the lower base and is formed in plural, and the protruding portion is arranged in plural at a position corresponding to the recessed portion.
According to still another feature of the present invention, a groove is circumferentially formed above the lower base.
According to still another feature of the present invention, the upper base has a hooking portion protruding in a circumferential direction.
According to still another feature of the present invention, the lower base has a cylindrical shape, and a ratio of a diameter to a thickness (diameter/thickness) is 10 or less.
An MOCVD apparatus according to another embodiment of the present invention includes: an upper base having a supporting surface which is in contact with the substrate and supports the substrate; a lower base supporting the upper base; and an induction coil configured to surround a side of the upper base and a side of the lower base.
According to another feature of the present invention, the induction coil is configured to be spaced apart from a side surface of the upper base by a distance greater than a distance from a side surface of the lower base.
According to still another feature of the present invention, the upper base and the lower base are coated with different kinds of substances from each other.
According to still another feature of the present invention, the induction coil is a side induction coil, and the MOCVD apparatus further includes a lower induction coil disposed adjacent to a lower surface of the lower susceptor.
An MOCVD apparatus according to another embodiment of the present invention includes: an upper base having a supporting surface which is in contact with the substrate and supports the substrate; a lower base supporting the upper base; and an induction coil disposed to surround a side surface of the upper base and a side surface of the lower base, the induction coil being configured such that an uppermost turn surrounds only a portion of the upper base, so that the upper base can pass through a space not occupied by the uppermost turn.
According to another feature of the present invention, the uppermost turn of the induction coil is configured to be wound around the periphery of the upper base by 300 ° or less.
According to still another feature of the present invention, the upper base has a hooking portion protruding in a circumferential direction.
According to still another feature of the present invention, the MOCVD apparatus further comprises: a robot unit configured to support the upper base by being hooked to the hooking portion and transfer the upper base to a space not occupied by the uppermost turn; and a driving device configured to be capable of raising or lowering the lower base.
According to still another feature of the present invention, the MOCVD equipment further includes thermal break pieces disposed between the induction coil and the upper susceptor and between the induction coil and the lower susceptor, and the thermal break pieces are configured to be capable of ascending or descending.
The control method according to an embodiment of the present invention is a control method for extracting an upper susceptor from an MOCVD apparatus, wherein the MOCVD apparatus includes: an upper base having a support surface which is in contact with the substrate and supports the substrate, and having a hooking portion protruding in a circumferential direction; a lower base supporting the upper base; an induction coil configured to surround a side surface of the upper base and a side surface of the lower base; a robot unit configured to support the upper base by being hooked to the hooking portion and transfer the upper base to a space not occupied by the uppermost turn; a driving device configured to be capable of raising or lowering the lower base; and a control device for controlling the robot assembly and the driving device, wherein the induction coil is configured such that an uppermost turn surrounds only a portion of the upper base so that the upper base can pass through a space not occupied by the uppermost turn. The control method comprises the following steps: a step in which the control device transfers the robot assembly to hook the robot assembly to the hooking portion, thereby supporting the upper base; a step in which the control device controls the drive device to lower the lower base; and a step in which the control device transfers the robot assembly and draws out the upper base through a space not occupied by the uppermost turn.
According to the susceptor assembly, the MOCVD apparatus including the same, of the present invention, it is possible to grow a thin film having more uniform characteristics on a substrate by reducing temperature unevenness on a support surface supporting the substrate, and it is possible to obtain a high yield in manufacturing an element using the substrate grown by the MOCVD process.
Further, according to the MOCVD equipment and the control method for extracting the upper susceptor from the MOCVD equipment of the present invention, it is possible to improve efficiency by heating a part of the upper susceptor, and to easily extract the upper susceptor in a minimum space, and efficiency, compactness, and high maintenance excellence of the MOCVD equipment can be expected.
Drawings
Fig. 1 is a schematic sectional view showing the configuration of a reactor of a conventional MOCVD apparatus.
Fig. 2 is a schematic sectional view showing a state in which a susceptor according to an embodiment of the present invention is mounted on a reactor of an MOCVD apparatus.
Fig. 3 is an exploded perspective view of the base assembly of fig. 2.
Fig. 4 is a diagram showing various projection shapes of the base assembly of fig. 2.
Fig. 5 is a perspective view of a base assembly configured with projections and recesses different from fig. 4.
Fig. 6 is a perspective view of a base assembly including a protrusion and a recess having a different shape than fig. 4.
FIG. 7 is a graph illustrating temperature deviations within a pocket based on actual temperatures of a single susceptor and a susceptor assembly according to an embodiment of the present invention.
FIG. 8 is a graph illustrating a temperature profile based on a single susceptor and the position of a susceptor assembly according to an embodiment of the present invention.
Fig. 9 is a sectional view showing the structure of a side induction coil of a base assembly applicable to the present invention.
Fig. 10 is a perspective view, a plan view, and a side view showing the structure of an induction coil including a lower induction coil.
Fig. 11 is a cross-sectional view of a base assembly according to another embodiment of the invention.
Fig. 12 is a perspective view schematically showing an example of a side induction coil different from the side induction coil of fig. 10.
Fig. 13a to 13e are sectional views of a part of an MOCVD apparatus sequentially showing a process of taking out an upper susceptor to the outside using a robot module in the MOCVD apparatus using the susceptor assembly of fig. 11 and the induction coil of fig. 12.
Fig. 14 is a cross-sectional view of a portion of an MOCVD apparatus including a shock absorber.
Fig. 15 is an enlarged view of a portion a of fig. 14.
Fig. 16 is a flowchart of a method of extracting the upper susceptor using the MOCVD apparatus of the present invention.
Detailed Description
The advantages and features of the present invention and the manner of attaining them will become apparent by reference to the embodiments to be described in detail hereinafter with reference to the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be embodied in various forms different from each other, and only the embodiments complete the disclosure of the present invention and provide those having ordinary knowledge in the art to which the present invention pertains for informing them of the scope of the present invention, which is defined only by the scope of the claims.
Although the terms first, second, etc. are used for describing various constituent elements, it is apparent that these constituent elements are not limited to these terms. These terms are used only for distinguishing one constituent element from another constituent element. Therefore, it is obvious that the first constituent element mentioned below may be the second constituent element within the technical idea of the present invention. Meanwhile, it is apparent that even though it is described that the second coating is performed after the first coating, the coating is performed in the reverse order to that is included in the technical idea of the present invention.
In the present specification, when reference numerals are used, the same reference numerals are used as much as possible when the same components are shown even when the drawings are different.
The size and thickness of each component shown in the drawings are shown for convenience of explanation, and the present invention is not limited to the size and thickness of the shown components.
Embodiments of the base assembly of the present invention are described below with reference to the accompanying drawings.
Fig. 2 is a sectional view schematically showing a state in which a susceptor according to an embodiment of the present invention is mounted on a reactor of an MOCVD apparatus. Fig. 3 is an exploded perspective view of the base assembly of fig. 2. In addition, fig. 4 is a diagram showing various projection shapes of the base assembly of fig. 2.
First, a mode in which the susceptor assembly 120 according to an embodiment of the present invention is disposed in the reactor 100 of the MOCVD apparatus and a heating mode will be described with reference to fig. 2 and 3.
Referring to fig. 2, a reactor 100 of the MOCVD apparatus includes a reaction chamber 110, a susceptor assembly 120, and an induction coil 130.
The reaction chamber 110 includes: an inflow unit 111 into which a gas to be reacted on the surface of the substrate flows; and an outflow part 112 for flowing out the residual gas left after the completion of the reaction (crystal growth), and a reaction space S is formed between the inflow part 111 and the outflow part 112.
In the present embodiment, the directions and the arrangement of the inflow portion 111 and the outflow portion 112 of the reaction chamber 110 are exemplary, and the reaction chamber 110 may be configured such that the reaction gas flows in the vertical direction or in other directions.
The susceptor assembly 120 includes an upper susceptor 121 and a lower susceptor 125. The upper susceptor 121 includes a support surface 122 above the upper susceptor to support the substrate W while contacting the substrate W, and the lower susceptor 125 supports the upper susceptor 121 from below. The base assembly 120 has a generally cylindrical shape.
On the other hand, the ratio of the diameter to the thickness (diameter/thickness) of the lower base 125 is preferably 10 or less. In addition, more preferably, the ratio of the diameter to the thickness of the lower base 125 is 3 to 5.
On the other hand, a hole 126 for inserting a thermocouple for measuring temperature may be formed in the lower base 125. In addition, a groove T applicable to loading and unloading of the upper susceptor 121 may be formed between the upper susceptor 121 and the lower susceptor 125.
The upper susceptor 121 and the lower susceptor 125 are made of a material that can be inductively heated. The upper susceptor 121 and the lower susceptor 125 may include a base material and a coating layer covering at least a portion of the surface of the base material.
The induction coil 130 is configured to surround a side of the susceptor assembly 120 in order to inductively heat the susceptor assembly 120. The induction coil 130 is configured to be able to apply a current having a frequency of several to several tens kHz, whereby the susceptor assembly 120 located inside the induction coil 130 can be inductively heated. As will be described later, the induction coil 130 may be additionally disposed on the lower surface of the base unit 120.
A thermal break film 141 blocking heat of the heated susceptor assembly 120 may be disposed between the induction coil 130 and the susceptor assembly 120. In addition, a heat shielding film 142 blocking radiant heat based on the heated substrate W may be disposed in the reaction chamber 110.
Referring again to fig. 2 and 3, the upper base 121 is formed to be thinner than the lower base 125. The upper base 121 is constrained with respect to a direction along a contact surface with the lower base 125, but is unconstrained with respect to a direction perpendicular to the contact surface, and is supported by the lower base 125. That is, it may be that the upper susceptor 121 is loaded in a manner of being placed from above the lower susceptor 125, and is unloaded in a manner of being lifted. When one loading is performed, the upper susceptor 121 is fixed to and rotated together with the lower susceptor 125 by the rotation of the lower susceptor 125.
Such a combination of the upper and lower susceptors 121 and 125 may be constructed in various embodiments.
First, referring to fig. 3, a protrusion P is formed on one of the upper base 121 and the lower base 125, a recess (R) is formed on the other so that the protrusion P can be fitted, and the upper base 121 and the lower base 125 can be coupled by coupling the protrusion P and the recess R. In the present embodiment, it is exemplified that a recess R is formed in the center of the upper base 121 and a protrusion P is formed at a position corresponding to the lower base 125.
Thus, the combination of the protrusion P and the depression R formed at the center has advantages that less processing cost is required and alignment (align) between the upper and lower bases 121 and 125 is easily performed.
Referring to fig. 4, the protrusions P', P ″ may have various forms. Of course, since the recessed portion R has a shape following the projecting portions P, P', P ″, the recessed portion R may have various shapes.
The projections P, P', P "are preferably formed such that the area of the cross section thereof gradually decreases from the lower base 125 to the end E thereof. Due to such a shape characteristic, the process of loading or unloading the upper susceptor 121 from or to the upper side becomes convenient, and particularly, even if loading is performed while the center between the upper susceptor 121 and the lower susceptor 125 is not accurately adjusted, as long as the end E of the protrusion P, P', P ″ enters the recess R, the center between the two susceptors 121, 125 can be combined in a precisely aligned state after the loading is finished.
The projection P, P 'may be formed in a polygonal shape in a section parallel to the contact surfaces C1, C2 in a portion adjacent to the contact surface C2 of the lower base 125, and in a circular shape in a portion adjacent to the end E of the projection P, P'. For example, as shown in fig. 3, the projection P may be formed to have a substantially hexagonal shape in cross section at a portion adjacent to the contact surface C2 of the lower base 125 and a substantially circular shape in cross section at a portion adjacent to the end E of the projection P. As shown in fig. 4 (a), the projection P may have a cross section having a substantially octagonal shape at a portion adjacent to the contact surface C of the lower base 125, and a circular shape at a portion adjacent to the end E of the projection P'.
In contrast, the projection P ″ may be formed in a shape having a cross section parallel to the contact surfaces C1, C2, in which a portion adjacent to the contact surface C2 of the lower base 125 is formed in a circular shape and a portion adjacent to an end of the projection P ″ is formed in a polygonal shape. For example, as shown in fig. 4 (b), the projection P ″ may be formed to have a circular shape in cross section at a portion adjacent to the contact surface C2 of the lower base 125 and an octagonal shape in cross section at a portion adjacent to the end E of the projection P ″.
Such a cross-sectional shape is merely an example, and it is obvious that various modifications are possible.
Fig. 5 is a perspective view of a base assembly configured with projections and recesses different from fig. 4.
As shown in fig. 5, in the base assembly 120', the convex portion P and the concave portion R may be provided in plural numbers in the outer peripheral portion instead of being provided in the centers of the upper base 121' and the lower base 125 '. The shape of each of the convex portion P and the concave portion R may be formed in various shapes as shown in fig. 3 and 4.
In this manner, in the case where the projection P and the recess R are formed in the outline portion, a more firm bonding between the upper base 121 and the lower base 125 can be obtained. In addition, since the space between the upper base 121 and the lower base 125 is fixed by the plurality of protrusions P and depressions R, the rotational force from the lower base 125 can be stably transmitted to the upper base 121, and the fixing force is dispersed, thereby having an advantage of reducing the fear of breakage of the protrusions P and depressions R.
Fig. 6 is a perspective view of a base assembly including a protrusion and a recess having a different shape than fig. 4.
Referring to fig. 6, in the base assembly 120 ″, the recess R ' has a long shape along the outline of the lower base 125 ″, and a plurality of projections P ″ ' are disposed in a long shape on the upper base 121 ″, at positions corresponding to the recess R '. In the present embodiment, the case where 3 projections P '″ and 3 recesses R' are provided is exemplified, but various numbers may be set.
In addition to such elongated projections P '″ and recesses R', it is preferable to further provide projections P and recesses R in the central portion as shown in fig. 3. Unlike fig. 3, in the present embodiment, the lower base 125 ″ is formed with the recess R, and the upper base 121 ″ is formed with the protrusion P.
Referring to fig. 3 to 6, as described above, the protrusion P, P ', P ", P '" and the recess R, R ' may have various shapes, and the positions thereof may be variously set.
Fig. 7 is a graph illustrating a temperature deviation within a recess generated based on an actual temperature of a single susceptor and a susceptor assembly according to an embodiment of the present invention, and fig. 8 is a graph illustrating a temperature distribution based on a position of a single susceptor and a susceptor assembly of the present invention.
As described above, the susceptor assembly 120, 120', 120 ″ of the present invention is characterized by having a double-layered structure composed of the upper susceptor 121, 121', 121 ″ and the lower susceptor 125, 125', 125 ″ and coated with different kinds of substances.
The base materials of the upper susceptors 121, 121', 121 ″ and the lower susceptors 125, 125', 125 ″ are made of a material that can be inductively heated by the induction coil 130. On the other hand, in view of the high heating temperature, it is preferable that the base member 120, 120', 120 ″ for the MOCVD apparatus is made of graphite (graphite) having a high melting point.
The coating layer covers at least a part of the base material and prevents the base material from reacting with the reaction gas. The upper susceptors 121, 121', 121 ″ and the lower susceptors 125, 125', 125 ″ have coatings of different materials, respectively, and for example, it is preferable that the upper susceptors 121, 121', 121 ″ are coated with Silicon Carbide (SiC) and the lower susceptors 125, 125', 125 ″ are coated with Tantalum Carbide (TaC).
Since tantalum carbide coatings are more difficult to clean than silicon carbide coatings, the upper susceptor 121, 121', 121 ″ that is primarily in contact with the process gas is preferably provided with a silicon carbide coating. Further, the process of removing aluminum nitride (AlN) with chlorine (Cl) is accompanied in the MOCVD process because tantalum carbide reacts with chlorine. The experimental results based on such heterogeneous coatings are revealed by fig. 7 and 8. On the other hand, as shown in fig. 3, the susceptor assembly used in the experiment is a susceptor assembly 120 in which a convex portion P and a concave portion R are formed in the central portion of each of the susceptors 121 and 125. Further, the thicknesses of the upper base 121 and the lower base 125 are set to 10mm and 60mm, respectively.
Specifically, in order to make the temperature on the upper surface of the upper susceptor 121, 121', 121 ″ to 1400 ℃ level according to the cascade method, it is necessary to locally heat the lower susceptor 125, 125', 125 ″ at 1500 ℃ or more, and thus a coating of a material excellent in thermal stability is required, and thus the lower susceptor 125, 125', 125 ″ preferably has a tantalum carbide coating excellent in thermal stability. Further, the susceptor made of a graphite material coated with tantalum carbide has a low emissivity, and is advantageous for being applied to the lower susceptors 125, 125', and 125 ″ having a high specific gravity in the entire heat generation because the susceptor has a magnetic property and makes the heat distribution uniform when the induction heating is performed in the cascade system. Further, since the tantalum carbide coating layer has different emissivity depending on the coating characteristics and temperature, and thus it is difficult to optically measure the surface temperature, the upper susceptor 121, 121', 121 ″ requiring precise temperature control on the supporting surface is preferably a silicon carbide coating layer in which the emissivity change is small with temperature and the emissivity change with respect to the coating method, the coating conditions, the coating thickness, and the like is small.
Referring to fig. 7 (a), the susceptor assembly (shown by a chain line) as such a heterogeneous coating combination of a two-layer structure, under a nitrogen-only atmosphere, even if the temperature of the susceptor assembly 120, 120', 120 ″ is increased, the deviation of the maximum temperature and the minimum temperature on the substrate supporting surface does not exceed 10 ℃. In contrast, a single susceptor coated only with silicon carbide (shown by a solid line) exhibited a deviation of about 26 ℃ at a thermocouple temperature of 1000 ℃, and the deviation tended to become larger as the temperature of the susceptor increased. In addition, a single susceptor coated only with tantalum carbide (shown in phantom) exhibited a much greater temperature deviation than the susceptor assembly of the present invention, although the temperature deviation was much reduced compared to a single susceptor coated only with silicon carbide.
In addition, even referring to (b) of fig. 7, according to the susceptor assembly of the heterogeneous coating combination of the two-layer structure of the present invention under hydrogen/nitrogen atmosphere, the following results were obtained: even if the temperature of the susceptor assembly is increased, the deviation between the maximum and minimum temperature on the support surface does not exceed 10 ℃, the single-coated susceptor is not much different than in a nitrogen atmosphere alone.
From the above, it was found that the temperature variation on the supporting surface can be significantly reduced in the case of using a susceptor assembly having a heterogeneous coating double-layer structure, as compared with the case of using each single susceptor.
As a result of the experiment shown in fig. 7, it was confirmed that the single susceptor having a tantalum carbide coating layer had a smaller temperature deviation on the supporting surface and heat was easily diffused as compared with the single susceptor having a silicon carbide coating layer, and thus, the susceptor assembly (upper side: SiC coating layer, lower side: TaC coating layer) of the heterogeneous coating layer combination according to the embodiment of the present invention reduced the temperature deviation of the center and the outer periphery in the lower susceptor and heated the upper susceptor, and it was concluded that the temperature deviation on the supporting surface of the upper susceptor could be greatly reduced.
Referring to fig. 8, it was confirmed that the effect of the susceptor assembly of the double-layered structure of the heterogeneous coating layer is more significant. As shown in fig. 8 (a), in the case of the susceptor assembly having the heterogeneous coating layer double-layer structure, it was confirmed that there was almost no temperature deviation between the central portion and the outer peripheral portion in the nitrogen atmosphere. In particular, it was confirmed that there was almost no temperature deviation not only in the pocket (pocket) position but also outside the pocket. In addition, it was confirmed that there was almost no temperature variation in the nitrogen atmosphere and the hydrogen/nitrogen atmosphere. The recess means a space recessed in a position where the substrate (wafer) is mounted, as shown in fig. 3, 5, and 6.
In contrast, however, in the case of a single susceptor with a silicon carbide coating, temperature deviations were clearly observed even in the recesses. In the case of a single susceptor having a tantalum carbide coating, although a small temperature deviation was observed in the pocket as compared with a single susceptor having a silicon carbide coating, it was observed that there was a temperature deviation in and out of the pocket.
That is, according to the susceptor assembly of the present invention, it was confirmed by measurement that not only the temperature deviation in the recess but also the temperature deviation in the entire region of the supporting surface was significantly reduced as compared with the single susceptor.
On the other hand, the gas atmosphere in the chamber can be set differently under various process conditions, and as shown in fig. 7 and 8, an effect of greatly reducing temperature variation on the supporting surface is obtained in each of the nitrogen atmosphere and the hydrogen/nitrogen mixed atmosphere, and it is expected that such an effect will be maintained even in various gas atmospheres. Thus, the constitution of the susceptor assembly according to an embodiment of the present invention presents a high possibility of being applicable to various processes other than the nitrogen atmosphere or the hydrogen/nitrogen mixed atmosphere, and thus has an advantage of being advantageous in terms of expandability.
Fig. 9 is a sectional view showing a structure of a side induction coil applicable to a base assembly of the present invention, and fig. 10 is a schematic installation view, a perspective view, a plan view, and a side view showing a structure of an induction coil including a lower induction coil. In particular, fig. 10 (a) shows a perspective sectional view of a side induction coil and a lower induction coil installed in the susceptor assembly of the present invention, fig. 10 (b) is a perspective view of the side induction coil and the lower induction coil, fig. 10 (c) is an upper view of the side induction coil and the lower induction coil, and fig. 10 (c) shows a side view of the side induction coil and the lower induction coil.
Referring to fig. 9, unlike fig. 2, the side induction coil 130 is configured to be spaced apart from the side surface of the upper base 121 by a distance D1 greater than a distance D2 from the side surface of the lower base 125. That is, the lower susceptor 125 is induction-heated more strongly than the upper susceptor 121, and heat is transferred from the lower susceptor 125 to heat the upper susceptor 121, so that a more uniform temperature distribution can be obtained on the substrate supporting surface 122.
Further, the upper susceptor 121 is directly induction-heated from the side induction coil 130 and is heated by receiving heat from the lower susceptor 125. Basically, as shown in fig. 2, if the distance between the side induction coil 130 and the side surface of the upper susceptor 121 and the distance between the side induction coil 130 and the side surface of the lower susceptor 125 are set to be constant, the specific gravity of induction heating by the side induction coil 130 is also large, and therefore the heating amount in the outer periphery is large, and there is a possibility that temperature unevenness on the supporting surface of the upper susceptor 121 to which silicon carbide having relatively low thermal diffusion characteristics is applied may be caused. In order to reduce such factors, it is effective to reduce the specific gravity of the direct induction heating of the upper susceptor 121 and to heat the upper susceptor 121 by relatively diffusing heat from the lower susceptor 125. Accordingly, as shown in fig. 9, the side induction coil 130 is preferably configured to be spaced apart from the side surface of the upper base 121 by a distance D1 greater than a distance D2 from the side surface of the lower base 125.
Referring to fig. 10, a lower induction coil 135 may be further included on the basis of the side induction coil 130. The lower induction coil 135 is disposed adjacent to the lower surface of the lower susceptor 125 to perform induction heating on the lower surface of the lower susceptor 125. Thus, a higher temperature on the support surface 122 can be obtained by the lower induction coil 135 than in the case of induction heating by only the side induction coil 130.
On the other hand, the heat inductively heated by the lower induction coil 135 is easily radiated by the tantalum carbide coating layer and transferred to the upper susceptor 121, and the upper susceptor 121 can be further heated in a form having heat uniformly distributed on the contact surfaces C1 and C2.
The side induction coil 130 and the lower induction coil 135 may be controlled so that both are operated or not operated, or may be controlled so that only one of them is operated or both are operated.
Fig. 11 is a sectional view of a susceptor assembly according to another embodiment of the present invention, fig. 12 is a perspective view schematically showing an example of a side induction coil different from the side induction coil of fig. 10, fig. 13a to 13e are sectional views sequentially showing a part of an MOCVD apparatus in which a robot assembly is used to draw an upper susceptor to the outside in the MOCVD apparatus using the susceptor assembly of fig. 11 and the induction coil of fig. 12, fig. 14 is a sectional view of a part of the MOCVD apparatus including a shock absorbing part, and fig. 15 is an enlarged view of a part a of fig. 14. Fig. 16 is a flowchart of a method for extracting the upper susceptor by using the MOCVD apparatus according to the present invention.
Referring to fig. 11 to 15, a susceptor assembly including other embodiments and an MOCVD apparatus including the same are described.
First, referring to fig. 11, a base assembly 220 according to another embodiment includes an upper base 221 and a lower base 225. The upper base 221 includes a support surface 222 above the upper base, which supports the substrate while contacting the substrate. As shown in the aforementioned base assembly 120, the upper base 221 is supported by the lower base 225.
The ratio of the diameter to the thickness (diameter/thickness) of the lower base 225 is preferably 10 or less. In addition, the ratio of the diameter to the thickness of the lower base 225 is more preferably 3 to 5.
A hooking portion 223 may be formed in an upper end portion of the upper base 221. The hooking portion 223 may be formed to protrude in the circumferential direction while forming a part of the supporting surface 222.
In other words, the upper base 221 has a larger average diameter than the lower base 225. That is, the diameter of the lower base 225 may be configured to be smaller than the diameter of the lower base 125 shown in fig. 2, so that the diameter of the induction coil can be reduced while the volume of the lower base 225 is reduced. Thus, even if the same current is applied to the induction coil, the lower susceptor 225 can be heated at a higher temperature, and the thermal uniformity can be adjusted more favorably. In addition, even if the amount of power applied to the induction coil is reduced, the temperature of the lower susceptor 225 can be raised at a high temperature, and more efficient induction heating can be achieved.
Referring to fig. 12, the induction coil may be configured to include a side induction coil 230 and a lower induction coil 235. Here, the side induction coil 230 has a difference in the number of turns (turns) from the side induction coil 130 of fig. 10. The side induction coil 130 of fig. 10 has 2 turns, whereas the side induction coil 230 of fig. 12 has more than 2 turns, and in the case of the uppermost turn U, is further formed to surround a portion of the upper base 221.
In the case of the uppermost turn U, the movement path of the upper base 221 is formed by the unwound portion (described later in detail with reference to fig. 13a to 13 e), and thus the unwound portion may be formed to a degree that the upper base 221 can pass through.
That is, the uppermost turn U is formed to be wound by about 180 ° so that the upper base 221 slides in a certain direction to pass through the inside of the side induction coil 230. As to how much winding is required, it can be determined by the size of the upper base 221 and the separation distance between the uppermost turn U and the upper base 221, for example, it is preferable that the uppermost turn is wound around the circumference of the upper base 221 by 300 ° or less, and the unwound portion occupies at least 60 °. That is, the uppermost turn U of the side induction coil 230 may be configured to surround only a portion of the upper base 221 so that the upper base 221 can pass through a space not occupied by the uppermost turn U.
The reason why the uppermost turn U is formed to provide the sliding path of the upper base 221 is that the upper base 221 cannot be lifted up almost all the time due to a complicated structure caused by, for example, gas to be introduced above the upper base 221 (the equipment of the applicant has a margin of only 1.3 cm), and the operation of moving the upper base 221 after lifting it is not actually realized. Therefore, by the partial winding of the uppermost turn U, a compact structure can be obtained while replacing the upper base 221.
Although there is a concern that temperature deviation in the support surface 222 and the recess may occur by induction heating only a partial region of the uppermost turn U, temperature deviation due to the weight of the uppermost turn U does not actually occur because the susceptor assembly 220 rotates during operation.
On the other hand, a detailed explanation of the connection relationship for the electric wires in the X site and the Y site is omitted. So long as they are energized to each other and induced current is applied.
Referring to fig. 13a to 13e and fig. 16, a process of extracting the upper susceptor 221 in the MOCVD apparatus to which the susceptor assembly 220 and the side induction coil 230 according to fig. 11 and 12 are applied will be described.
Fig. 13a shows the configuration of the base assembly 220 and the side induction coil 230 etc. in normal operation. The side thermal break 241 and the lower thermal break 242 function to shield the radiant heat discharged from the base assembly 220 to improve thermal efficiency and prevent the radiant heat from the base assembly 220 from being directly applied to the induction coils 230, 235. In addition, arcing (arc) from the induction coils 230, 235 to the base assembly 220 may be prevented by the thermal break 241, 242.
That is, there should be a side thermal break 241 between the side induction coil 230 and the base assembly 220 and a lower thermal break 242 between the lower induction coil 235 and the base assembly 220. However, since the upper base 221 needs to be moved out of the equipment and then in and out of the equipment in order to mount and separate the substrate, the substrate may be frequently transferred, and since the side thermal break 241 is present in the transfer path, the transfer for replacing the upper base 221 may not be smoothly performed.
However, such concerns can be addressed by the combination of the base assembly 220 of fig. 11 and the side induction coil 230 of fig. 12.
Hereinafter, a method of controlling the upper susceptor 221 drawn out from the MOCVD apparatus according to the present invention will be described with reference to fig. 16. The MOCVD equipment of the present invention includes a control device (not shown) configured to control a driving device for driving the robot assembly R, the side thermal barrier 241, and the lower base 225.
Referring to fig. 13b, when the upper base 221 needs to be replaced, the control device first lowers the thermal resistance rupture 241 (S110). At this time, the configuration other than the side heat cutoff piece 241 is fixed. If the side thermal cutoff piece 241 descends, the upper base 221 is exposed to the outside of the side thermal cutoff piece 241.
Referring to fig. 13c, the robot assembly R is moved by the control device to be hooked on the hooking part 223 of the exposed upper base 221 (S120). The robot assembly R is configured to move linearly in the left-right direction by a driving device, not shown, and to be hooked on the hooking portion 223, thereby supporting the upper base 221.
Thereafter, referring to fig. 13d, the support shaft S supporting the lower base 225 is lowered downward by the control device to space the lower base 225 from the upper base 221 (S130). At this time, a driving device, not shown, lowers the lower base 225, and the driving device is configured to lift the lower base 225.
Thereafter, referring to fig. 13e, the control device performs control of linearly transferring the spaced upper base 221 by the robot assembly R and extracting the same to the outside of the apparatus (S140).
In this manner, through the series of processes of fig. 13a to 13e, the upper base 221 to be replaced can be easily drawn out. In other words, the shape of the side induction coil 230 opened in the drawing direction and the configuration of the susceptor assembly 220 in which the hooking portion 223 is disposed on the upper side are used, and the simplified robot assembly R that can linearly transfer only by the vertical movement of the side thermal barrier 241 and the susceptor assembly 220 is used, so that the upper susceptor 221 can be replaced, and thus the MOCVD apparatus can be downsized and reduced in cost.
Of course, even if the uppermost turn U is simply not hooked on the upper base 221 and the turn is wound only around the lower base 225, the upper base 221 may be replaced by the above-described robot assembly R. However, when there is the uppermost turn U as in the present embodiment, the induction heating of the upper base 221 by the uppermost turn U is formed in the upper base 221, and therefore a more efficient base configuration can be realized.
On the other hand, as shown in fig. 14, it is preferable to further include an impact buffering portion 250 for buffering an impact when the side thermal break 241 is lifted. The impact buffering unit 250 is connected to a driving device, not shown, that generates driving for moving the thermal cutoff piece up and down, and is connected to the thermal cutoff piece 241 through the partition plate 260 to buffer an impact during moving up and down. Although the embodiment has been described as including the pair of impact absorbing portions 250, the number of impact absorbing portions may be increased as necessary.
Specifically, referring to fig. 15, the impact buffering portion 250 is configured to include a Shoulder Bolt (Low Head Bolt)251 having a Low Head H, a first spring 252, a second spring 253, a first flange washer 254, a second flange washer 255, and a third flange washer 256.
The shoulder bolt 251 has a head H at one end, and the other end thereof is fixed by being screwed to a frame F connected to a driving portion, not shown. The partition 260 is formed inside with a hole 261 through which the head H of the shoulder bolt 251 can move, and a protruding intermediate projection 261 is formed between the opposite ends of the head H of the shoulder bolt 251 coupled to the frame F.
A first spring 252 is sandwiched between the intermediate projection 261 and the head H, and a second spring 253 is sandwiched between the frame F and the intermediate projection 261. A first flange washer 254 is sandwiched between the first spring 252 and the head H, a second flange washer 255 is sandwiched between the first spring 252 and the intermediate projection 261, and a third flange washer 256 is sandwiched between the intermediate projection 261 and the second spring 253.
With the shock absorbing portion 250 having such a configuration, at the moment when the side thermal break 241 starts to rise or fall, the shock applied from the driving portion to the side thermal break 241 may be absorbed by the springs 252 and 253, and accidental breakage of the side thermal break 241 may be prevented.
Although the embodiments of the present invention have been described above with reference to the accompanying drawings, those having ordinary skill in the art to which the present invention pertains will appreciate that the embodiments can be implemented in other specific forms without changing the technical idea or essential features of the present invention. It is therefore to be understood that the above-described embodiments are illustrative in all respects, rather than restrictive.

Claims (21)

1. A base assembly, comprising:
an upper base having a supporting surface which is in contact with the substrate and supports the substrate; and
a lower base supporting the upper base,
the upper and lower bases are coated with different kinds of substances from each other.
2. The base assembly of claim 1,
the lower base is coated to have a lower emissivity than the upper base.
3. The base assembly of claim 1,
at least a portion of a surface of the upper susceptor is coated with silicon carbide,
at least a portion of a surface of the lower susceptor is coated with tantalum carbide.
4. The base assembly of claim 1,
the upper base is supported by the lower base with constraint in a direction along a contact surface with the lower base and with no constraint in a direction perpendicular to the contact surface.
5. The base assembly of claim 4,
at least one protrusion is formed on any one of the upper base and the lower base, and at least one recess is formed on the other to enable assembly with the protrusion.
6. The base assembly of claim 5,
the protrusion is formed at the center of the lower base, the depression is formed in the upper base,
the protrusion is formed such that the area of the cross section of the protrusion gradually decreases as it goes from the lower base to the end.
7. The base assembly of claim 6,
the cross-sectional shape is formed in a polygonal shape at a portion adjacent to the lower base and in a circular shape at a portion adjacent to the end.
8. The base assembly of claim 6,
the cross-sectional shape is formed in a circular shape at a portion adjacent to the lower base and in a polygonal shape at a portion adjacent to the end portion.
9. The base assembly of claim 5,
the concave portion has a long shape along an outer contour portion of the lower base and is formed in plural, and the convex portion is arranged in plural at a position corresponding to the concave portion.
10. The base assembly of claim 1,
a groove is formed circumferentially above the lower base.
11. The base assembly of claim 1,
the upper base is provided with a hooking part protruding towards the circumferential direction.
12. The base assembly of claim 1,
the lower base has a cylindrical shape, and the ratio of the diameter to the thickness (diameter/thickness) is 10 or less.
13. An MOCVD apparatus, comprising:
an upper base having a supporting surface which is in contact with the substrate and supports the substrate;
a lower base supporting the upper base; and
an induction coil configured to surround a side of the upper base and a side of the lower base.
14. The MOCVD apparatus according to claim 13,
the upper and lower bases are coated with different kinds of substances from each other.
15. The MOCVD apparatus according to claim 13,
the induction coil is a side induction coil,
the MOCVD device further comprises a lower induction coil, wherein the lower induction coil is adjacently arranged below the lower base.
16. An MOCVD apparatus, comprising:
an upper base having a supporting surface which is in contact with the substrate and supports the substrate;
a lower base supporting the upper base; and
an induction coil configured to surround a side of the upper base and a side of the lower base,
the induction coil is configured such that the uppermost turn surrounds only a portion of the upper base so that the upper base can pass through a space not occupied by the uppermost turn.
17. The MOCVD apparatus of claim 16,
the uppermost turn of the induction coil is configured to be wound around the periphery of the upper base by 300 ° or less.
18. The MOCVD apparatus of claim 16,
the upper base is provided with a hooking part protruding towards the circumferential direction.
19. The MOCVD apparatus of claim 18,
the MOCVD apparatus further comprises:
a robot unit configured to support the upper base by being hooked to the hooking portion and transfer the upper base to a space not occupied by the uppermost turn; and
and a driving device configured to be capable of raising or lowering the lower base.
20. The MOCVD apparatus of claim 19,
the MOCVD device further comprises thermal break pieces which are arranged between the induction coil and the upper base and between the induction coil and the lower base,
the thermal break is configured to be capable of rising or falling.
21. A control method for extracting an upper susceptor from an MOCVD apparatus, wherein,
the MOCVD apparatus includes: an upper base having a support surface which is in contact with the substrate and supports the substrate, and having a hooking portion protruding in a circumferential direction; a lower base supporting the upper base; an induction coil configured to surround a side surface of the upper base and a side surface of the lower base; a robot unit configured to support the upper base by being hooked to the hooking portion and transfer the upper base to a space not occupied by the uppermost turn; a driving device configured to be capable of raising or lowering the lower base; and a control device for controlling the robot assembly and the drive device,
the induction coil is configured such that the uppermost turn surrounds only a portion of the upper base, so that the upper base can pass through a space not occupied by the uppermost turn,
the control method comprises the following steps:
a step in which the control device transfers the robot assembly to hook the robot assembly to the hooking portion, thereby supporting the upper base;
a step in which the control device controls the drive device to lower the lower base; and
and a step in which the control device transfers the robot assembly to lead out the upper base through a space not occupied by the uppermost turn.
CN201980086410.3A 2018-12-28 2019-12-27 Base assembly, MOCVD device comprising base assembly and control method for leading out upper base from MOCVD device Active CN113227451B (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
KR10-2018-0172340 2018-12-28
KR1020180172340A KR20190005818A (en) 2018-12-28 2018-12-28 Susceptor assembly and mocvd apparatus using the same
KR1020190175713A KR20200083307A (en) 2018-12-28 2019-12-26 Susceptor assembly and mocvd apparatus using the same
KR10-2019-0175713 2019-12-26
PCT/KR2019/018625 WO2020139030A1 (en) 2018-12-28 2019-12-27 Susceptor assembly, mocvd apparatus comprising same, and control method for withdrawing upper susceptor from mocvd apparatus

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JPS61132595A (en) * 1984-11-28 1986-06-20 Toshiba Corp Apparatus for vapor-phase crystal growth by thermal decomposition of organic metal compound
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JP2010530031A (en) * 2007-06-15 2010-09-02 アイクストロン、アーゲー Apparatus for coating a substrate placed on a susceptor
KR20110041799A (en) * 2009-10-16 2011-04-22 주성엔지니어링(주) Substrate placing means, and appratus and module for treating substrate including the same
US20160201219A1 (en) * 2013-09-27 2016-07-14 Lpe S.P.A. Susceptor with supporting element
WO2017137872A1 (en) * 2016-02-08 2017-08-17 Lpe S.P.A. Inductively heatable susceptor and epitaxial deposition reactor

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US6461428B2 (en) 1999-12-06 2002-10-08 Toshiba Ceramics Co., Ltd. Method and apparatus for controlling rise and fall of temperature in semiconductor substrates

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Publication number Priority date Publication date Assignee Title
JPS61132595A (en) * 1984-11-28 1986-06-20 Toshiba Corp Apparatus for vapor-phase crystal growth by thermal decomposition of organic metal compound
KR20080081823A (en) * 2007-03-05 2008-09-10 어플라이드 머티어리얼스, 인코포레이티드 Microbatch deposition chamber with radiant heating
JP2010530031A (en) * 2007-06-15 2010-09-02 アイクストロン、アーゲー Apparatus for coating a substrate placed on a susceptor
KR20110041799A (en) * 2009-10-16 2011-04-22 주성엔지니어링(주) Substrate placing means, and appratus and module for treating substrate including the same
US20160201219A1 (en) * 2013-09-27 2016-07-14 Lpe S.P.A. Susceptor with supporting element
WO2017137872A1 (en) * 2016-02-08 2017-08-17 Lpe S.P.A. Inductively heatable susceptor and epitaxial deposition reactor

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KR20190005818A (en) 2019-01-16
KR20200083307A (en) 2020-07-08
DE112019006503T5 (en) 2021-09-16

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