CN113224633B - Method for improving light source anti-reflection based on micro-ring - Google Patents

Method for improving light source anti-reflection based on micro-ring Download PDF

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CN113224633B
CN113224633B CN202011264644.3A CN202011264644A CN113224633B CN 113224633 B CN113224633 B CN 113224633B CN 202011264644 A CN202011264644 A CN 202011264644A CN 113224633 B CN113224633 B CN 113224633B
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陈明华
汤黎伟
李佳琛
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Tsinghua University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0064—Anti-reflection components, e.g. optical isolators

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Abstract

The method for improving the light source anti-reflection based on the micro-ring self-injection can be applied to any photonic integration platform aiming at the tolerance of a light source to external reflection, can be used for a large-scale multi-chip integration system, and avoids introducing other preparation processes such as heterogeneous integration, wafer bonding, magnetization conditions and the like for manufacturing an optical isolator. The method for improving the light source antireflection based on the micro-ring is characterized in that a micro-ring structure is added in front of the original silicon-based photonic chip structure, and the micro-ring structure is horizontally and directly coupled and connected with a laser through an end face; connecting a Drop port and an Input port of the micro-ring structure through a multi-mode interferometer to form a straight waveguide; the Through port of the micro-ring structure is used as an output port to be connected with other on-chip optical link structures; due to the micro-ring structure, the laser works in a self-injection locking state, and meanwhile, reflected light fed back from the Through end is filtered.

Description

Method for improving light source anti-reflection based on micro-ring
Technical Field
The invention relates to the technical field of semiconductor lasers, in particular to a method for improving light source antireflection based on a micro-ring, which is mainly used for improving light source antireflection capability in multi-chip mixed packaging.
Background
Semiconductor lasers are widely used in silicon-based systems as a small light source. The output characteristics of a semiconductor laser are very sensitive to external reflection, and unstable external reflection can degrade the phase stability of the laser and cause output optical power fluctuation. Stronger external reflections will further cause the laser to enter a multi-modal, chaotic state. For integrated photonic systems, the degradation of light source performance due to on-chip internal reflection can lead to increased noise, limiting the application of large-scale photonic systems.
In-chip reflections in silicon optical systems are difficult to avoid, and due to the precision limitation of the photolithography process, the roughness of the sidewalls of the fabricated waveguides can cause back scattering and coupling into the input waveguides, which has been widely observed in experiments. Reflections can also be caused by other functional structures on-chip, for example in multimode interferometers (MMIs), the "self-resonant mode" resulting from the free-standing mode can be about 10 due to the unbalanced intensity and phase of the two optical field distributions split at the input end-4·|r|2Multiple reflected power, where r is the two optical field distribution intensities. If the MMI is used as a power splitter, the phase imbalance will result in severe back reflections.
For various internal reflections that may exist on the chip, the main solution at present is to design a two-port nonreciprocal on-chip isolator. This method is similar to the bulk isolator, and the magneto-optical material is bonded on the silicon wafer to realize unidirectional transmission under the magnetization condition. The bonding process is not compatible with the CMOS process, and the preparation cost of the device is increased. Some researches utilize a non-linear phenomenon, such as non-reciprocal optical transmission in a whispering gallery mode resonator (WGM) with space-time symmetry (spatial-time-symmetry), to realize a four-port unidirectional optical transmission isolator. However, the realization conditions for realizing PT symmetry are very harsh, the preparation process has very high requirements, and the device realization difficulty is very high. In summary, it has been difficult to realize an optical isolator on a chip that satisfies both high isolation and low insertion loss.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention provides a method for improving light source antireflection based on a microring, which has tolerance to external reflection for a light source, can be applied to any photonic integration platform, can be used for a large-scale multi-chip integration system, and avoids introducing other preparation processes such as heterogeneous integration, wafer bonding, magnetization conditions and the like for manufacturing an optical isolator.
The technical scheme of the invention is as follows: the method for improving the light source antireflection based on the micro-ring is characterized in that a micro-ring structure is added in front of the original silicon-based photonic chip structure, and the micro-ring structure is horizontally and directly coupled and connected with a laser through an end face; connecting a Drop port and an Input port of the micro-ring structure through a multi-mode interferometer to form a straight waveguide; the Through port of the micro-ring structure is used as an output port to be connected with other on-chip optical link structures; due to the micro-ring structure, the laser works in a self-injection locking state, and meanwhile, reflected light fed back from the Through end is filtered.
Aiming at the on-chip light source, the invention utilizes the feedback self-injection of the external cavity to enable the light source to enter a self-injection locking state and has tolerance to external reflection. Meanwhile, the resonant cavity resonates near the laser output wavelength in the self-injection locking state, and has a filtering attenuation effect on the back reflection outside the resonant cavity, so that the reflection tolerance of the light source is further increased. The micro-ring resonant cavity with feedback injection can be applied to any photonic integration platform, and any other on-chip optical waveguide structure can be continuously designed after the output port of the micro-ring resonant cavity, so that the function of a photonic system is not influenced, the micro-ring resonant cavity can be used for a large-scale multi-chip integration system, and other preparation processes such as heterogeneous integration, wafer bonding, magnetization conditions and the like are avoided for manufacturing an optical isolator.
Drawings
Fig. 1 shows a schematic diagram of a method of raising the anti-reflection of a light source based on microrings according to the present invention.
Fig. 2 shows a schematic diagram of a micro-ring structure, wherein fig. 2(1) is a conventional micro-ring structure, and fig. 2(2) is a self-injection micro-ring resonator.
Fig. 3 shows the measurement points of the Through transmission spectrum of the micro-ring and the fitted curve, Drop end reflection spectrum diagram.
Fig. 4 shows a test scheme of the on-chip isolation method.
Fig. 5 shows the reflectivity versus output spectrum SMSR.
Wherein:
1-micro-ring structure 2-semiconductor laser 3-laser and silicon optical chip coupling end face 4-silicon optical chip and single-mode optical fiber coupling end face 5-single-mode optical fiber 6-optical fiber circulator 7-spectrometer 8-variable optical attenuator 9-micro-ring Drop end 10-micro-ring Add end 11-micro-ring Input end 12-micro-ring Through end 13-phase thermal tuning electrode 14-1 x 2 multi-mode interferometer 15-micro-ring thermal tuning electrode 16-micro-ring output port
Detailed Description
The on-chip isolation scheme based on external cavity self-injection locking can effectively resist back reflection of an on-chip internal structure. When the output power of the laser is less than-4.31 dB, namely less than 37.1% of the output power, the single-mode working state of the laser is not affected, and the on-chip back reflection power tolerance of the scheme is 37.1%. The result can be applied to a silicon-based waveguide platform with higher loss and an on-chip structure with the risk of back scattering, protects the laser from being influenced by reflected light, and is beneficial to the application of a large-scale photonic integrated system.
As shown in fig. 1, in the method for improving light source anti-reflection based on the micro-ring, a micro-ring structure is added in front of an original silicon-based photonic chip structure, and the micro-ring structure is horizontally and directly coupled and connected with a laser by adopting an end face; connecting a Drop port and an Input port of the micro-ring structure through a multi-mode interferometer to form a straight waveguide; the Through port of the micro-ring structure is used as an output port to be connected with other on-chip optical link structures; due to the micro-ring structure, the laser works in a self-injection locking state, and meanwhile, reflected light fed back from the Through end is filtered.
Aiming at the on-chip light source, the invention utilizes the feedback self-injection of the external cavity to enable the light source to enter a self-injection locking state and has tolerance to external reflection. Meanwhile, the resonant cavity resonates near the laser output wavelength in the self-injection locking state, and has a filtering attenuation effect on the back reflection outside the resonant cavity, so that the reflection tolerance of the light source is further increased. The micro-ring resonant cavity with feedback injection can be applied to any photonic integration platform, and any other on-chip optical waveguide structure can be continuously designed after the output port of the micro-ring resonant cavity, so that the function of a photonic system is not influenced, the micro-ring resonant cavity can be applied to a large-scale multi-chip integration system, and other preparation processes such as heterogeneous integration, wafer bonding, magnetization conditions and the like are avoided for manufacturing an optical isolator.
Preferably, a thermo-modulating electrode is provided both above the straight waveguide portion and above the microring.
Preferably, the straight waveguide part of the micro-ring structure and the laser end face coupling is designed with a tapered waveguide with gradually changed width as a mode spot converter.
Preferably, the micro-ring structure is coupled with a DFB semiconductor laser, and the thermal tuning electrode is adjusted to enable the DFB to work in a self-injection locking state, so that stable output of a low-noise single longitudinal mode is realized, and the anti-reflection capability of a light source is improved.
Preferably, the multimode interferometer is a 1 × 2 multimode interferometer.
The present invention is described in more detail below.
The invention is illustrated by taking a DFB laser and a silicon-based silicon nitride micro-ring resonant cavity as an example, and the light source isolation scheme is shown in figure 1.
In order to provide feedback self-injection, an Input port and a Drop port of the micro-ring resonator are connected by using an MMI, the external cavity resonator and the DFB laser adopt direct alignment coupling in the example, an end face 1 is a contact end face, and considering the end face processing precision of the laser and the waveguide, the end face 1 always has an air gap of 1um, and an air FP cavity is formed to cause end face reflection. After coupling, the relative position is fixed, so that the length and the structure of the air FP cavity are fixed, and the air FP cavity and the silicon-based micro-ring resonant cavity on the chip form a composite cavity together. The reflection of the end face is an external cavity of a fixed structure, so that unstable reflection cannot be formed, and the reflection is different from the back reflection in the chip outside the micro-ring which needs to be isolated.
The laser and the micro-ring resonant cavity jointly form a light source isolation scheme, and the structure can greatly improve the tolerance of the intensity of reflected light in the chip after the output of the micro-ring. The structure is applied to a system-level integrated photonic system, and the output of the micro-ring in fig. 1 is other on-chip structures, which may include passive modulators, filters, delay lines, and may also include active detectors, etc. The output end of the silicon optical chip is generally coupled with the light beam into the single-mode fiber by using a lens or other methods, and the end surface reflection formed in the coupling process is converged with the back reflection of other structures on the chip and coupled into the output end of the micro-ring. Due to the action of the microring self-injection locking, the reflected light cannot influence the self-injection locking state of the DFB laser, and the performance and the working state of the laser are not influenced by the internal reflection of the system on a chip.
For a traditional silicon-based photonic system, a self-injection resonant cavity is designed between a light source and a functional system structure to protect a laser from the internal reflection of a system on a chip, and the improvement is based on the original system, does not need to add an additional process or an additional device, only needs to design a structure, and has the advantages of simplicity and low cost.
The conventional micro-ring structure is shown in fig. 2(1), and is injected from an Input port and output from a Through port. In order to inject the feedback light of the Drop port into the laser, a micro-ring structure is designed as shown in fig. 2(2), and a multimode interferometer is used to connect the Drop port and the Input port. The output light of the laser enters from the straight waveguide, is divided into two parts after passing through the multimode interferometer, and is injected back to the laser from the other end after passing through the microring respectively. In addition, in order to tune the phase matching of the resonance wavelength of the micro-ring and the external cavity, a thermal tuning electrode is also designed above the straight waveguide and above the micro-ring, which is indicated by the gray part in fig. 2 (2). In addition, a section of tapered waveguide with gradually changed width is designed in the end face coupling part of the laser to serve as a spot size converter to improve the coupling efficiency of the laser and the microring. The theory and experiment result shows that the improvement of the coupling efficiency improves the self-injection feedback efficiency of the laser and improves the anti-reflection capability of the laser.
Such a feedback self-injection micro-ring is used as an external cavity of the semiconductor laser to reduce the noise of the laser and suppress the line width. The narrow-linewidth single longitudinal mode laser is coupled with an FP semiconductor laser, and a composite cavity formed by the laser can realize narrow-linewidth single longitudinal mode output by utilizing Vernier caliper effect (Vernier effect). The multistage micro-ring cascade is also used to couple with a semiconductor optical amplifier (OSA) to realize single-mode oscillation output and show a narrow line width tunable characteristic.
The semiconductor laser or the semiconductor optical amplifier is coupled with the micro-ring resonator and used for forming a composite cavity, single-mode lasing is achieved, spontaneous radiation noise of the semiconductor laser is suppressed, and intrinsic line width is suppressed. The invention provides the coupling of the semiconductor laser and the micro-ring resonant cavity, and has the function of improving the anti-reflection capability of the laser besides the purposes. The application can design an additional micro-ring resonant cavity at the front end of the designed optical link and couple the micro-ring resonant cavity with the semiconductor laser. After the resonant wavelength and the phase of the micro-ring resonant cavity are tuned, the laser enters a self-injection locking state, and the external reflection resistance of the semiconductor laser is improved besides the characteristics of narrow line width, low noise and stable single-mode output. At the moment, the single longitudinal mode working state of the laser in the locked state cannot be influenced by the internal reflection of other optical links on the micro-ring back chip and the reflection of external optical fibers.
The principle of external cavity self-injection locking has been analyzed in detail since the last century, stable external cavity self-injection can suppress spontaneous emission noise of the laser, narrow the lorentz linewidth, reduce rin (relative Intensity noise), and the like, but few documents report that the laser based on feedback self-injection locking also has good anti-reflection characteristics. The invention theoretically explains and experimentally proves that in the self-injection locking state, the single-mode output state of the laser has good anti-interference effect on external reflection. FIG. 3 shows normalized output spectra at around 1550nm for the Through end and Drop end of the micro-ring, where the yellow point is the Through end measured output spectrum, the blue curve is the fitted curve based on the measured points, and the purple curve is the corresponding Drop end output spectrum based on the fitted parameters.
The laser works in a self-injection locking state by tuning the micro-ring and the phase-position thermal tuning electrode, the working frequency is supposed to be at the point A (Through end transmission spectrum) and the point B (Drop end reflection spectrum) in figure 3, and the working point frequency is set as v0Then the transmitted spectral intensity at the operating frequency is t (v)0) (point A), the intensity of the reflection spectrum is r (v)0) (point B), let the reflectance outside the microring be RextThe critical external reflectance is solved by Lang-Kobayashi (LK) equation:
Figure BDA0002772773080000061
wherein k iscThe minimum value of the feedback intensity k is a critical value at which the cw laser becomes unstable, and is:
Figure BDA0002772773080000071
ΓRthe relaxation oscillation damping factor of the external cavity laser is given by the following formula:
Figure BDA0002772773080000072
wherein tau iseAbout 1ns for carrier lifetime, and G is differential gain of about 8.5.10-17cm2，αmIn order to account for the total loss,including active dielectric loss, end-coupling loss, and external cavity transmission loss. EtaiFor internal quantum efficiency, about 0.76.IbiasAnd IthBias current and threshold current respectively, and V is active region volume, which is about 1.5-10-16m3T (v) fitted according to FIG. 30) And r (v)0) R can be calculatedextAbout-3.2 dB. In order to increase the critical feedback intensity RextThen, the damping coefficient gamma needs to be raisedRAnd the damping coefficient is subject to loss αmInfluence. Reducing the end face coupling loss and the external cavity waveguide loss is one of the key factors for improving the critical feedback rate. Meanwhile, the conclusion is also matched with injection locking, the injection strength of the external cavity laser is improved, namely, the end face coupling loss is reduced, the waveguide loss is reduced, the Q value is improved, and the output Lorentz line width of the external cavity laser is reduced. The design of the on-chip resonator gives some ideas, and for FP external cavities and micro-ring resonant cavities, the loss needs to be reduced, the Q value is improved, the intensity of the stored light in the cavity is improved, the end face loss between a laser and the external cavity is reduced, the equivalent cavity length of the external cavity is improved, and the like.
To simulate the back-reflected light of other structures on the chip, a test scheme was designed as in FIG. 4. Compared with fig. 1, after the output of the micro-ring, the micro-ring is directly coupled into a single-mode fiber and is externally connected with a circulator, and a port 1 and a port 3 of the circulator are connected to simulate back reflection caused by other device structures on the chip in fig. 1. The optical attenuator controls the reflected light power. The experiment estimates that the lens coupling loss of the chip and the optical fiber in direct coupling (at the end face 2) is about-1.5 dB, and the reflected light power is the power injected into the micro-ring after the coupling loss is considered.
The anti-reflection characteristic is based on strong self-injection locking, and the thermal tuning electrodes on the micro-ring and the straight waveguide are required to be tuned firstly to be in a locking state. In general, the self-injection locked state can be determined from several aspects: (1) the laser exhibits a stable single-mode narrow linewidth output. (2) The output power drops by a few dB compared to the free state. (3) Obvious hysteresis effect is shown. According to the judgment, the Lorentz line width output by the experimental tuning laser (1) is 2kHz @3dB (20kM delay self-heterodyne measurement method). (2) The output power of 0.63dBm is reduced by 1.58dB compared to the free state output power of 2.21 dBm. (3) In the tuning process, the multimode-chaotic state-locking state has obvious hysteresis effect. The above shows that the laser enters the locking state, and the optical attenuator is adjusted on the basis of the locking state to test the anti-reflection performance.
The ratio of the feedback injection power to the output power is the external feedback rate RextThe spectrometer measures the Side-Mode Suppression Ratio (SMSR) of the output spectrum as a reference index of the anti-reflection performance, as shown in fig. 5 (1). For the locked state, before point C, i.e., when the reflectivity is less than-4.31 dB (the reflected power is less than 37.1%), the SMSR is kept above 43dB, and both modes of operation are single mode operation, and the output spectrum is as shown in C in fig. 5 (2). And if the reflectivity is larger than-4.31 dB, the output jumps to a multimode state, and at the moment, due to the interference of external disordered injection light intensity, the active region of the laser has a plurality of resonance modes and cannot work in a single mode state, such as a point D in a graph (1) in a graph (5) and a graph (2) in an output spectrum of the laser. To compare the reflection tolerance in the no self-injection state, the laser was tuned to a free-running state with a maximum output optical power of 2.21dBm and no narrow linewidth feature. At this time, the above experiment was repeated to obtain the curve in the free state in FIG. 5 (1). The output spectra before and after the multi-mode transition are shown as (A) and (B) in (2) of FIG. 5, and correspond to the points (A) and (B) in the figure, respectively. The reflection tolerance in the free state is-19.71 dB, namely, the reflected light power is less than 1.1 percent, and the single mode operation can be maintained. The anti-reflection scheme of self-injection locking proposed herein improves the back reflection tolerance from-19.71 dB to-4.31 dB, and improves the back reflection tolerance by 15.4dB, and this result is enough to protect the light source in the hybrid package from the interference of external reflection, so that the system can operate stably.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the present invention in any way, and all simple modifications, equivalent variations and modifications made to the above embodiment according to the technical spirit of the present invention still belong to the protection scope of the technical solution of the present invention.

Claims (2)

1. The method for improving the light source antireflection based on the micro-ring is characterized by comprising the following steps: a micro-ring structure is added in front of the original silicon-based photonic chip structure, and the micro-ring structure is horizontally and directly coupled and connected with a laser by adopting an end face; connecting a Drop port and an Input port of the micro-ring structure through a multi-mode interferometer to form a straight waveguide; the Through port of the micro-ring structure is used as an output port to be connected with other on-chip optical link structures; due to the micro-ring structure, the laser works in a self-injection locking state, and meanwhile, reflected light fed back from the Through end is filtered;
thermal tuning electrodes are arranged above the straight waveguide and above the micro-ring;
a section of tapered waveguide with gradually changed width is designed at the straight waveguide part coupled with the end face of the laser as a spot size converter;
the micro-ring structure is coupled with a DFB semiconductor laser, and a thermal regulation electrode is adjusted to enable the DFB to work in a self-injection locking state, so that stable output of a low-noise single longitudinal mode is realized, and the light source anti-reflection capability is improved.
2. The microring-based method of enhancing light source antireflection of claim 1, wherein: the multimode interferometer is a 1 x 2 multimode interferometer.
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9748726B1 (en) * 2014-08-18 2017-08-29 Morton Photonics Multiple-microresonator based laser
CN107611774A (en) * 2017-09-30 2018-01-19 武汉光迅科技股份有限公司 A kind of silicon substrate integrated tunable laser structure and its control method
CN107872005A (en) * 2017-10-20 2018-04-03 中国科学院半导体研究所 Silicon substrate hybrid integrated tunable laser and photon chip
CN110768103A (en) * 2019-11-01 2020-02-07 灵芯光电(天津)有限公司 Micro-ring reflector of integrated external cavity narrow linewidth laser and design method thereof
WO2020057716A1 (en) * 2018-09-17 2020-03-26 Ecole Polytechnique Federale De Lausanne (Epfl) Generating optical pulses via a soliton state of an optical microresonator coupled with a chip based semiconductor laser

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9748726B1 (en) * 2014-08-18 2017-08-29 Morton Photonics Multiple-microresonator based laser
CN107611774A (en) * 2017-09-30 2018-01-19 武汉光迅科技股份有限公司 A kind of silicon substrate integrated tunable laser structure and its control method
CN107872005A (en) * 2017-10-20 2018-04-03 中国科学院半导体研究所 Silicon substrate hybrid integrated tunable laser and photon chip
WO2020057716A1 (en) * 2018-09-17 2020-03-26 Ecole Polytechnique Federale De Lausanne (Epfl) Generating optical pulses via a soliton state of an optical microresonator coupled with a chip based semiconductor laser
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