CN113223958A - Method for improving polymer in thick aluminum etching process - Google Patents
Method for improving polymer in thick aluminum etching process Download PDFInfo
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- CN113223958A CN113223958A CN202110447796.5A CN202110447796A CN113223958A CN 113223958 A CN113223958 A CN 113223958A CN 202110447796 A CN202110447796 A CN 202110447796A CN 113223958 A CN113223958 A CN 113223958A
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- etching
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- aluminum
- photoresist
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 71
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 71
- 238000005530 etching Methods 0.000 title claims abstract description 59
- 229920000642 polymer Polymers 0.000 title claims abstract description 55
- 238000000034 method Methods 0.000 title claims abstract description 47
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 36
- 239000007789 gas Substances 0.000 claims abstract description 16
- 239000002131 composite material Substances 0.000 claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 10
- 239000010703 silicon Substances 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 239000001307 helium Substances 0.000 claims abstract description 8
- 229910052734 helium Inorganic materials 0.000 claims abstract description 8
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000010936 titanium Substances 0.000 claims abstract description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 5
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims abstract description 5
- 238000001020 plasma etching Methods 0.000 claims abstract description 5
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000010494 dissociation reaction Methods 0.000 abstract description 4
- 230000005593 dissociations Effects 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000005596 ionic collisions Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention provides a method for improving polymer in a thick aluminum etching process, which comprises the steps of providing a silicon substrate, and forming an oxide layer on the silicon substrate; forming a composite layer of titanium nitride and titanium on the oxide layer; forming an aluminum layer on the composite layer; forming a photoresist layer on the aluminum layer; exposing and developing the photoresist to form a photoresist pattern; etching the aluminum layer according to the photoresist pattern to form a groove; and etching the aluminum layer by adopting plasma etching, and introducing helium gas as etching gas into the etching cavity. In the manufacturing process of the power MOS device, the equivalent voltage on the surface of the electrostatic chuck and the pressure of an etching cavity are increased in the step of etching the aluminum layer, and helium is introduced as a gas to bombard more photoresist to the surface of the side wall of the aluminum layer. Can convert the polymer component into the polymer mainly comprising photoresist, so that the polymer is easy to remove, and simultaneously can promote plasma dissociation, and the polymer containing aluminum is not easy to form.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a method for improving a polymer in a thick aluminum etching process.
Background
In the manufacturing process of the power MOS device, a light resistance layer and an aluminum layer on the aluminum layer in the MOS structure are thick, the thickness of the aluminum layer is about 4 microns, and after the aluminum layer is etched, a polymer (polymer) on the side wall of the aluminum layer is found to be serious and cannot be completely removed after passing through a cavity.
Therefore, a new method is needed to solve the above problems.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, the present invention is directed to a method for improving polymer in a thick aluminum etching process, so as to solve the problem that polymer on the aluminum sidewall cannot be completely removed in the manufacturing process of a power MOS device in the prior art.
To achieve the above and other related objects, the present invention provides a method for improving polymer in a thick aluminum etching process, the method at least comprising the steps of:
providing a silicon substrate, and forming an oxide layer on the silicon substrate;
secondly, forming a composite layer of titanium nitride and titanium on the oxide layer;
step three, forming an aluminum layer on the composite layer; forming a photoresist layer on the aluminum layer;
fourthly, exposing and developing the photoresist to form a photoresist pattern;
fifthly, etching the aluminum layer according to the photoresist pattern to form a groove; and etching the aluminum layer by adopting plasma etching, and introducing helium gas as etching gas into the etching cavity.
Preferably, the thickness of the aluminum layer and the photoresist layer in step three is 4 micrometers.
Preferably, in the step five, a polymer is formed on the side wall of the groove in the process of etching the aluminum layer.
Preferably, the composition of the polymer formed in step five comprises carbon, oxygen and aluminum.
Preferably, the polymer in step five comprises AlC in its composition.
Preferably, the content of AlC in the fifth step is 0.602%.
Preferably, the pressure of the etching chamber in the fifth step is 18 mT.
Preferably, the equivalent voltage of the surface of the electrostatic chuck in the etching chamber in the fifth step is 389V.
Preferably, the method further comprises a sixth step of removing the residual photoresist on the groove.
As mentioned above, the method for improving the polymer in the thick aluminum etching process has the following beneficial effects: in the manufacturing process of the power MOS device, the equivalent voltage on the surface of the electrostatic chuck and the pressure of an etching cavity are increased in the step of etching the aluminum layer, and helium is introduced as a gas to bombard more photoresist to the surface of the side wall of the aluminum layer. Can convert the polymer component into the polymer mainly comprising photoresist, so that the polymer is easy to remove, and simultaneously can promote plasma dissociation, and the polymer containing aluminum is not easy to form.
Drawings
FIG. 1 is a schematic diagram of a photoresist pattern formed on an aluminum layer according to the present invention;
FIG. 2 is a schematic diagram showing a structure of a groove formed by etching an aluminum layer according to the present invention;
FIG. 3 is a schematic diagram of the structure of the present invention after removing the photoresist on the groove;
FIG. 4 is a flow chart of a method for improving polymer in a thick aluminum etching process according to the present invention.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 1 to 4. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated.
The invention provides a method for improving polymer in a thick aluminum etching process, as shown in fig. 4, fig. 4 is a flow chart of the method for improving polymer in a thick aluminum etching process. The method at least comprises the following steps:
providing a silicon substrate, and forming an oxide layer on the silicon substrate; as shown in fig. 1, fig. 1 is a schematic structural view illustrating a photoresist pattern formed on an aluminum layer according to the present invention. This step provides the silicon substrate, after which the oxide layer 01 is formed on the silicon substrate. Further, the oxide layer 01 in this embodiment is silicon dioxide.
Secondly, forming a composite layer of titanium nitride and titanium on the oxide layer; as shown in fig. 1, in this step two, a composite layer 02 of the titanium nitride TiN and the titanium Ti is formed on the oxide layer 01.
Step three, forming an aluminum layer on the composite layer; forming a photoresist layer on the aluminum layer; as shown in fig. 1, the Aluminum Layer (AL)03 is formed on the composite layer 02 in this step three.
Further, the thickness of the aluminum layer and the photoresist layer in step three of this embodiment is 4 μm.
Fourthly, exposing and developing the photoresist to form a photoresist pattern; as shown in fig. 1, in the fourth step, the photoresist is respectively exposed and developed in sequence to form a photoresist pattern 04 as shown in fig. 1.
Fifthly, etching the aluminum layer according to the photoresist pattern to form a groove; and etching the aluminum layer by adopting plasma etching, and introducing helium gas as etching gas into the etching cavity. As shown in fig. 2, fig. 2 is a schematic structural view illustrating a groove formed by etching an aluminum layer according to the present invention. Etching the aluminum layer 03 according to the photoresist pattern 04 to form a groove; and etching the aluminum layer by adopting plasma etching, and introducing helium gas as etching gas into the etching cavity. In this embodiment, the aluminum layer is etched, and the composite layer below the aluminum layer and the oxide layer are etched together to form the structure shown in fig. 2.
Further, in the fifth step of this embodiment, a polymer is formed on the sidewall of the groove during the etching process of the aluminum layer.
Further, the composition of the polymer formed in step five of this example includes carbon, oxygen, and aluminum.
Further, the polymer in step five of this embodiment contains AlC in its composition.
Further, the content of AlC in step five of this embodiment is 0.602%. The content of the AlC is atomic percent.
Further, in the fifth step of this embodiment, the pressure of the etching chamber is 18 mT.
Further, the equivalent voltage of the surface of the electrostatic chuck in the etching chamber in the fifth step of this embodiment is 389V.
As shown in table one, the pressure (Pre) and the equivalent voltage (vdc) are included therein.
Table one:
| main | Pre.(mT) | SRF | BRF | Vdc/V |
| ME | 15 | 1250 | 300 | 318 |
| ME | 15 | 1250 | 400 | 356 |
| ME | 18 | 1250 | 400 | 389 |
| ME | 15 | 1400 | 300 | 239 |
as a result of the examination, the Polymer residues were mainly composed of carbon, oxygen and aluminum. Polymers containing AL are difficult to remove in etch chambers; the experimental protocol was designed to improve polymer residue from two aspects: firstly, reducing the generation of polymer in a main etching cavity chamber; and secondly, reducing the content of aluminum AL in the polymer.
Introducing He gas in the step five of Al etching, wherein the He gas can increase the temperature of dissociated electrons, so that the energy of the dissociated electrons is increased, the ion collision is intensified, and finally the dissociation degree of the plasma is increased, so that Al is more easily removed, and a polymer containing Al is not easily formed; meanwhile, the He gas can accelerate the air extraction rate in the Chamber, take away more polymers and improve the polymer residues; the experimental data in table one show that the AL etching step increases Vdc (Vdc is the equivalent voltage of the ESC surface of the electrostatic chuck, and the larger Vdc, the higher the wafer surface energy); more photoresist PR is bombarded to the surface of the aluminum Al side wall by the increased Vdc to be used as a polymer source, so that the polymer component can be converted into a polymer mainly containing carbon C, and the polymer is very easy to remove.
Further, in this embodiment of the present invention, the method further includes a sixth step of removing the remaining photoresist on the groove. As shown in fig. 3, fig. 3 is a schematic structural view after the photoresist on the groove is removed in the present invention.
In summary, in the manufacturing process of the power MOS device, the equivalent voltage on the surface of the electrostatic chuck and the pressure of the etching chamber are increased in the step of etching the aluminum layer, and helium is introduced as a gas to bombard more photoresist on the surface of the side wall of the aluminum layer. Can convert the polymer component into the polymer mainly comprising photoresist, so that the polymer is easy to remove, and simultaneously can promote plasma dissociation, and the polymer containing aluminum is not easy to form. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (9)
1. A method for improving polymer in thick aluminum etching process is characterized by at least comprising the following steps:
providing a silicon substrate, and forming an oxide layer on the silicon substrate;
secondly, forming a composite layer of titanium nitride and titanium on the oxide layer;
step three, forming an aluminum layer on the composite layer; forming a photoresist layer on the aluminum layer;
fourthly, exposing and developing the photoresist to form a photoresist pattern;
fifthly, etching the aluminum layer according to the photoresist pattern to form a groove; and etching the aluminum layer by adopting plasma etching, and introducing helium gas as etching gas into the etching cavity.
2. The method for improving polymer in thick aluminum etching process according to claim 1, wherein: the thickness of the aluminum layer and the photoresist layer in step three is 4 microns.
3. The method for improving polymer in thick aluminum etching process according to claim 1, wherein: and fifthly, forming a polymer on the side wall of the groove in the process of etching the aluminum layer.
4. The method for improving polymer in thick aluminum etching process as claimed in claim 3, wherein: the composition of the polymer formed in step five includes carbon, oxygen and aluminum.
5. The method for improving polymer in thick aluminum etching process as claimed in claim 4, wherein: and the polymer in the fifth step contains AlC.
6. The method for improving polymer in thick aluminum etching process as claimed in claim 5, wherein: and the content of the AlC in the fifth step is 0.602%.
7. The method for improving polymer in thick aluminum etching process according to claim 1, wherein: and in the fifth step, the pressure of the etching cavity is 18 mT.
8. The method for improving polymer in thick aluminum etching process according to claim 1, wherein: and the equivalent voltage of the surface of the electrostatic chuck in the etching cavity in the step five is 389V.
9. The method for improving polymer in thick aluminum etching process according to claim 1, wherein: the method further comprises a sixth step of removing the residual photoresist on the groove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110447796.5A CN113223958B (en) | 2021-04-25 | 2021-04-25 | Method for improving polymer in thick aluminum etching process |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110447796.5A CN113223958B (en) | 2021-04-25 | 2021-04-25 | Method for improving polymer in thick aluminum etching process |
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| CN113223958A true CN113223958A (en) | 2021-08-06 |
| CN113223958B CN113223958B (en) | 2022-09-20 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102820261A (en) * | 2012-08-22 | 2012-12-12 | 上海宏力半导体制造有限公司 | Aluminum etching method |
| CN103904023A (en) * | 2012-12-25 | 2014-07-02 | 上海华虹宏力半导体制造有限公司 | Photoresist removing method in thick aluminum etching process |
| CN107799396A (en) * | 2017-09-29 | 2018-03-13 | 上海华虹宏力半导体制造有限公司 | The lithographic method of aluminium pad |
| CN110400749A (en) * | 2019-07-17 | 2019-11-01 | 上海华力微电子有限公司 | A kind of remaining method of improvement crystal column surface microparticle |
| CN111968914A (en) * | 2019-05-20 | 2020-11-20 | 无锡华润上华科技有限公司 | Thick aluminum etching method |
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2021
- 2021-04-25 CN CN202110447796.5A patent/CN113223958B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102820261A (en) * | 2012-08-22 | 2012-12-12 | 上海宏力半导体制造有限公司 | Aluminum etching method |
| CN103904023A (en) * | 2012-12-25 | 2014-07-02 | 上海华虹宏力半导体制造有限公司 | Photoresist removing method in thick aluminum etching process |
| CN107799396A (en) * | 2017-09-29 | 2018-03-13 | 上海华虹宏力半导体制造有限公司 | The lithographic method of aluminium pad |
| CN111968914A (en) * | 2019-05-20 | 2020-11-20 | 无锡华润上华科技有限公司 | Thick aluminum etching method |
| CN110400749A (en) * | 2019-07-17 | 2019-11-01 | 上海华力微电子有限公司 | A kind of remaining method of improvement crystal column surface microparticle |
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