CN113218980A - High-resolution method for synchronously acquiring and analyzing structure and component information of integrated circuit - Google Patents
High-resolution method for synchronously acquiring and analyzing structure and component information of integrated circuit Download PDFInfo
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- CN113218980A CN113218980A CN202110461975.4A CN202110461975A CN113218980A CN 113218980 A CN113218980 A CN 113218980A CN 202110461975 A CN202110461975 A CN 202110461975A CN 113218980 A CN113218980 A CN 113218980A
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- 238000000034 method Methods 0.000 title claims abstract description 19
- 230000005540 biological transmission Effects 0.000 claims abstract description 30
- 238000009826 distribution Methods 0.000 claims abstract description 16
- 238000003384 imaging method Methods 0.000 claims abstract description 9
- 238000005520 cutting process Methods 0.000 claims abstract description 6
- 238000010183 spectrum analysis Methods 0.000 claims description 3
- 238000000619 electron energy-loss spectrum Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 14
- 238000005556 structure-activity relationship Methods 0.000 abstract description 3
- 238000012512 characterization method Methods 0.000 abstract description 2
- 238000005430 electron energy loss spectroscopy Methods 0.000 abstract description 2
- 238000001493 electron microscopy Methods 0.000 abstract description 2
- 241000252073 Anguilliformes Species 0.000 abstract 1
- 239000000523 sample Substances 0.000 description 21
- 239000010410 layer Substances 0.000 description 9
- 230000006870 function Effects 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000007547 defect Effects 0.000 description 4
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 4
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 4
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 3
- 238000000192 extended X-ray absorption fine structure spectroscopy Methods 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 238000000386 microscopy Methods 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 238000004630 atomic force microscopy Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000004611 spectroscopical analysis Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/2206—Combination of two or more measurements, at least one measurement being that of secondary emission, e.g. combination of secondary electron [SE] measurement and back-scattered electron [BSE] measurement
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
- G01N23/20091—Measuring the energy-dispersion spectrum [EDS] of diffracted radiation
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/2202—Preparing specimens therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/227—Measuring photoelectric effect, e.g. photoelectron emission microscopy [PEEM]
- G01N23/2273—Measuring photoelectron spectrum, e.g. electron spectroscopy for chemical analysis [ESCA] or X-ray photoelectron spectroscopy [XPS]
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Abstract
The invention relates to the technical field of electron microscopy characterization of integrated circuits, and discloses a high-resolution method for synchronously acquiring and analyzing structure and component information of an integrated circuit, which comprises the following steps: firstly, cutting and thinning the integrated circuit by using sample thinning equipment to prepare a thin slice with the thickness of a thin area of 50 nm; secondly, embedding the prepared slice on a transmission electron microscope carrier net; and thirdly, observing the selected area in the integrated circuit by using a scanning transmission electron imaging (STEM) function of the high-resolution transmission electron microscope. According to the scheme, a selected area in an integrated circuit is prepared into a sheet sample suitable for being observed by a transmission electron microscope by using sample thinning equipment, the sample is subjected to simultaneous high-resolution STEM imaging and EDS/EELS acquisition under the high-resolution transmission electron microscope, and the structure and component distribution information in each functional area of the integrated circuit and the areas such as interfaces among the functional areas are analyzed and distinguished, so that the structure-activity relationship and the failure reason of the integrated circuit material and devices are analyzed.
Description
Technical Field
The invention relates to the technical field of characterization of electron microscopy of integrated circuits, in particular to a high-resolution method for synchronously acquiring and analyzing structure and component information of an integrated circuit.
Background
The integrated circuit industry is gradually moving into 2nm processes and will continue to move towards ever finer 1nm processes. As the size of integrated circuits decreases, their structural designs and production processes have significantly changed, for example, in order to reduce the area of Complementary Metal Oxide Semiconductor (CMOS) devices and Static Random Access Memories (SRAMs), forkshet transistors carrying mounted Power rails (BPR, i.e., a structure in which Power lines are Buried under transistors) are used in a 2nm process; in a 1 nanometer process, a Complementary FET (CFET) using BPR would be used; in order to reduce the resistance of the Cu interconnection including barrier metal such as Ta and TaN, a reactive process, i.e., Dry Etching (Dry Etching) is directly performed on the metal. The use of these new designs and new processes makes the defects generated in the structures of the regions of the integrated circuit material and the interfaces between them more complex, with complex atomic structures and composition distributions. In fact, 2nm and 1nm correspond to about 20 atoms and 10 atoms respectively, so in order to adapt to the research and development of new structures and new functions of current small-size integrated circuit materials and devices, the relation between defects in material structures, interface structures and component distribution thereof and the performance of integrated circuits is clarified, and it becomes important to obtain visual data of the defects in the integrated circuits and the structure and component distribution of the interfaces at high resolution up to an atomic level.
The high resolution transmission electron microscopy is an advanced technique for characterizing the distribution of the structure and components on the surface and inside of an analytical material by using an electron beam as a light source and an electromagnetic field as a lens, and can realize high resolution from 0.3nm to 0.04nm, wherein the atomic resolution is realized when the resolution value is not more than 0.1 nm. For comparison, the scanning tunnel microscopy and the atomic force microscopy can only analyze the surface structure information of the integrated circuit material and cannot obtain the internal structure information of the material; x-ray photoelectron spectroscopy (XPS) and extended X-ray absorption fine structure spectroscopy (EXAFS) enable material elemental information and electronic structure to be seen, but with limited spatial resolution. High-resolution transmission electron microscopy has the advantage that the internal structural information and elemental composition distribution of the integrated circuit can be analyzed at the atomic level. Therefore, the high-resolution transmission electron microscopy is the first technical means for analyzing the structure and composition change mechanism of the integrated circuit under the atomic resolution. However, although the structure imaging technique in the high-resolution transmission electron microscopy technique has been widely used for observing various structures of an integrated circuit, it is rarely mentioned in the integrated circuit because of the difficulty of the operation technique of synchronously acquiring and analyzing atomic-level component distributions while observing the structures.
In summary, a technical means for synchronously collecting and analyzing the structure and composition information of the integrated circuit at a high resolution level up to atomic resolution is developed, and still a problem to be solved in the art is still needed.
Disclosure of Invention
Technical problem to be solved
Aiming at the defects of the prior art, the invention provides a high-resolution method for synchronously acquiring and analyzing the structure and the component information of an integrated circuit, which mainly utilizes high-resolution transmission electron microscope equipment and auxiliary equipment (such as sample thinning equipment) thereof to distinguish the atomic level component distribution information and the structure information of each functional area of the integrated circuit and the interface between the functional areas, and solves the problem that the operation technology for synchronously acquiring and analyzing the atomic level component distribution is difficult while observing the structure.
(II) technical scheme
In order to achieve the purpose, the invention provides the following technical scheme:
a high resolution method for synchronously acquiring and analyzing structure and component information of an integrated circuit comprises the following steps:
firstly, cutting and thinning the integrated circuit by using sample thinning equipment to prepare a thin slice with the thickness of a thin area of 50 nm;
secondly, embedding the prepared slice on a transmission electron microscope carrier net;
thirdly, observing a selected area in the integrated circuit by using a scanning transmission electron imaging (STEM) function of the high-resolution transmission electron microscope, and recording a high-resolution structural image of the selected area;
fourthly, simultaneously using the STEM function and simultaneously using the X-ray energy spectrum analysis (EDS) or Electron Energy Loss Spectroscopy (EELS) function in the high-resolution transmission electron microscope to obtain high-resolution component distribution information in the same selected area
Preferably, the carrying net is in a shape of a semicircular comb with the diameter of 3 mm.
(III) advantageous effects
Compared with the prior art, the invention provides a high-resolution method for synchronously acquiring and analyzing the structure and the component information of an integrated circuit, which has the following beneficial effects:
(1) according to the scheme, a selected area in an integrated circuit is prepared into a sheet sample suitable for being observed by a transmission electron microscope by using sample thinning equipment, the sample is subjected to simultaneous high-resolution STEM imaging and EDS/EELS acquisition under the high-resolution transmission electron microscope, and the structure and component distribution information in each functional area of the integrated circuit and the areas such as interfaces among the functional areas are analyzed and distinguished, so that the structure-activity relationship and the failure reason of the integrated circuit material and devices are analyzed.
(2) Compared with the scanning tunnel microscopy and the atomic force microscopy, which can only obtain the surface structure information of the integrated circuit and can not obtain the internal structure information of the material, XPS and EXAFS can only see the material elements and the electronic structure, but have limited resolution, the synchronous high-resolution transmission electronic microscopy provided by the invention can synchronously obtain the structure information and the component information in the micro-area of the integrated circuit at the high resolution level including atomic resolution, thereby deepening the knowledge of the integrated circuit and the material thereof.
Detailed Description
FIG. 1 is a schematic view of a transmission electron microscope grid on which a sample is loaded in example 1 of the present invention;
fig. 2 is a graph of the results of EDS spectroscopy analysis of the collected images in example 1 of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
A high resolution method for synchronously acquiring and analyzing structure and component information of an integrated circuit comprises the following steps:
firstly, cutting and thinning the integrated circuit by using sample thinning equipment to prepare a thin slice with the thickness of a thin area of 50 nm;
secondly, embedding the prepared slices on a transmission electron microscope carrier net, wherein the carrier net is in a semicircular comb shape with the diameter of 3 mm;
thirdly, observing a selected area in the integrated circuit by using a scanning transmission electron imaging (STEM) function of the high-resolution transmission electron microscope, and recording a high-resolution structural image of the selected area;
and fourthly, simultaneously using the STEM function and simultaneously using an X-ray energy spectrum analysis (EDS) function or an Electron Energy Loss Spectrum (EELS) function in the high-resolution transmission electron microscope to obtain high-resolution component distribution information in the same selected region.
Through the steps, the structure information and the component distribution information of the integrated circuit can be synchronously obtained at a high resolution level including atomic resolution, and the structure-activity relationship and the failure source of the integrated circuit material and the device can be found by distinguishing element distribution and corresponding structures in different micro-areas and analyzing the performance of the integrated circuit corresponding to atomic-level components and structure information.
Example 1:
1. preparation of strontium titanate samples that can be used as an interfacial oxide layer for integrated circuits:
the focused ion beam equipment is sample thinning equipment, and is used for thinning and sampling strontium titanate which is an interface oxide layer commonly used in an integrated circuit in the example;
firstly plating a layer of platinum (Pt) on a selected area for material surface protection, digging two U-shaped pits at a certain position away from the protective layer by using an ion beam, and thinning the position of the plated Pt layer (namely a transmission sample layer) to about 1.5-2 microns;
then connecting the transmission sample layer to the nanometer hand through Pt, cutting off the connection between the transmission sample layer and the original area of the integrated circuit by utilizing ion beams, and moving the transmission sample layer through the nanometer hand;
moving the sample to the vicinity of a transmission electron microscope carrying net by using a nanometer hand, connecting the sample to the carrying net by using Pt, and cutting off the connection between the sample and the nanometer hand to load the sample on the transmission electron microscope carrying net, as shown in figure 1 in the attached drawing of the specification; and finally, thinning the transmission sample layer on the net to about 50 nm.
2. The structure and the component distribution of the strontium titanate sample are synchronously analyzed:
collecting a structural image on an atom resolution level by using an HAADF imaging mode in STEM imaging technology of a high-resolution transmission electron microscope in any selected area in the prepared strontium titanate sample, synchronously collecting component signals in each point area scanned by an electron beam in the area by using an EDS probe in the electron microscope, ensuring that the collection position is fixed during collection, slightly changing the collection time according to different samples, and taking the sample for about 15 minutes;
and then performing EDS (electronic discharge spectroscopy) spectrogram analysis on the acquired image, and selecting an energy interval where each element is located, so that the element represented by each atom and the position of the element are clearly distinguished in the image, and the result is shown in figure 2 in the attached drawing of the specification.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (2)
1. A high resolution method for synchronously acquiring and analyzing structure and component information of an integrated circuit is characterized by comprising the following steps:
firstly, cutting and thinning the integrated circuit by using sample thinning equipment to prepare a thin slice with the thickness of a thin area of 50 nm;
secondly, embedding the prepared slice on a transmission electron microscope carrier net;
thirdly, observing a selected area in the integrated circuit by using a scanning transmission electron imaging (STEM) function of the high-resolution transmission electron microscope, and recording a high-resolution structural image of the selected area;
and fourthly, simultaneously using the STEM function and simultaneously using an X-ray energy spectrum analysis (EDS) function or an Electron Energy Loss Spectrum (EELS) function in the high-resolution transmission electron microscope to obtain high-resolution component distribution information in the same selected region.
2. The method as claimed in claim 1, wherein the carrier net is in the shape of a semicircular comb with a diameter of 3 mm.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114486432A (en) * | 2022-01-21 | 2022-05-13 | 北京大学 | Novel high-flux half-moon-shaped carrier net for freezing double-beam extraction of transmission electron microscope sample |
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| JP2004022318A (en) * | 2002-06-17 | 2004-01-22 | Mitsubishi Electric Corp | Transmission electron microscope and sample analysis method |
| CN101625302A (en) * | 2008-07-08 | 2010-01-13 | 中芯国际集成电路制造(上海)有限公司 | Method for preparing transmission electron microscope sample |
| US20100300873A1 (en) * | 2006-10-20 | 2010-12-02 | Fei Company | Method for creating s/tem sample and sample structure |
| CN103675358A (en) * | 2012-09-25 | 2014-03-26 | Fei公司 | System and method for ex situ analysis of substrate |
| CN103698178A (en) * | 2013-12-12 | 2014-04-02 | 中国航空工业集团公司北京航空材料研究院 | Preparation method for thin-film sample for high-resolution transmission electron microscope |
| CN105510097A (en) * | 2015-12-18 | 2016-04-20 | 山东省分析测试中心 | Ceramic material failure analysis method based on transmission electron microscope |
| CN105914159A (en) * | 2015-02-24 | 2016-08-31 | Fei 公司 | Pattern matching using a lamella of known shape for automated S/TEM acquisition and metrology |
-
2021
- 2021-04-27 CN CN202110461975.4A patent/CN113218980A/en active Pending
Patent Citations (7)
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| JP2004022318A (en) * | 2002-06-17 | 2004-01-22 | Mitsubishi Electric Corp | Transmission electron microscope and sample analysis method |
| US20100300873A1 (en) * | 2006-10-20 | 2010-12-02 | Fei Company | Method for creating s/tem sample and sample structure |
| CN101625302A (en) * | 2008-07-08 | 2010-01-13 | 中芯国际集成电路制造(上海)有限公司 | Method for preparing transmission electron microscope sample |
| CN103675358A (en) * | 2012-09-25 | 2014-03-26 | Fei公司 | System and method for ex situ analysis of substrate |
| CN103698178A (en) * | 2013-12-12 | 2014-04-02 | 中国航空工业集团公司北京航空材料研究院 | Preparation method for thin-film sample for high-resolution transmission electron microscope |
| CN105914159A (en) * | 2015-02-24 | 2016-08-31 | Fei 公司 | Pattern matching using a lamella of known shape for automated S/TEM acquisition and metrology |
| CN105510097A (en) * | 2015-12-18 | 2016-04-20 | 山东省分析测试中心 | Ceramic material failure analysis method based on transmission electron microscope |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114486432A (en) * | 2022-01-21 | 2022-05-13 | 北京大学 | Novel high-flux half-moon-shaped carrier net for freezing double-beam extraction of transmission electron microscope sample |
| CN114486432B (en) * | 2022-01-21 | 2023-09-29 | 北京大学 | Novel high-flux semilunar shaped carrier net for freezing double-beam extraction transmission electron microscope sample |
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