CN113214221A - Combined luminescent material and application thereof - Google Patents

Combined luminescent material and application thereof Download PDF

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CN113214221A
CN113214221A CN202110388975.6A CN202110388975A CN113214221A CN 113214221 A CN113214221 A CN 113214221A CN 202110388975 A CN202110388975 A CN 202110388975A CN 113214221 A CN113214221 A CN 113214221A
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CN113214221B (en
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苏仕健
李文琪
刘坤坤
李伟
彭晓媚
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South China University of Technology SCUT
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Abstract

The invention discloses a combined luminescent material and application thereof, belonging to the technical field of luminescent materials. The combined luminescent material comprises: a host material and a guest material; the host material has a transition dipole moment horizontal orientation degree of > 80%; the guest material is at least one of a thermally activated delayed fluorescence material and a conventional fluorescence material. According to the invention, a host material with the transition dipole moment horizontal orientation degree of more than 80% is combined with a luminous guest material, the host material can be used for sensitizing the guest material, so that the transition dipole moment horizontal orientation degree of the guest material is improved, and after the material is used for a light-emitting diode, the light extraction efficiency and the external quantum efficiency of the diode can be improved.

Description

Combined luminescent material and application thereof
Technical Field
The invention belongs to the technical field of luminescent materials, and particularly relates to a combined luminescent material and application thereof.
Background
The Organic Light Emitting Diode (OLED) has the advantages of high color contrast, high response speed, low power consumption, no blue light hazard, flexible display and the like, is already applied in the fields of solid-state illumination, display and the like, and has good application prospect.
The existing organic luminescent materials mainly comprise: professor Forrest et al, princeton university, 1998, developed phosphorescent materials containing heavy metal atoms, and professor Adachi, japan university, kyushu, 2008, developed thermally activated delayed fluorescent materials with smaller singlet energy gaps. These materials can effectively utilize triplet excitons to achieve light emission, and theoretically can achieve 100% internal quantum efficiency, that is, can greatly improve the efficiency of an organic light emitting diode. However, in the organic light emitting diode, since there is a large difference between the refractive index (n ≈ 1.7-2.0) of the organic layer and the refractive index of the glass substrate (n ≈ 1.5) and air (n ≈ 1.0), when carriers are recombined in the light emitting layer and light is radiated outward, if the light is incident to the substrate at an angle larger than a critical angle, the light is totally emitted at the interface of the glass substrate and the organic layer due to a waveguide mode and thus localized in the organic layer; similarly, if light exits from the substrate to the air at an angle greater than the critical angle, the light may be totally reflected at the interface between the glass substrate and the air due to the ground mode, resulting in the light being confined in the glass substrate; these results in low light extraction efficiency of the device, which hinders improvement of theoretical efficiency of the device.
Therefore, the external quantum efficiency of the organic light emitting diode is low, and the low efficiency limits the popularization of the application of the diode.
Disclosure of Invention
The present invention is directed to solving at least one of the problems of the prior art described above. Therefore, the invention provides a combined luminescent material, which combines a host material with the transition dipole moment horizontal orientation degree of more than 80% with a luminescent guest material, wherein the host material can sensitize the guest material, thereby improving the transition dipole moment horizontal orientation degree of the guest material, and after the material is used for a light-emitting diode, the light extraction efficiency and the external quantum efficiency of the diode can be improved.
The invention also provides a diode with the combined luminescent material.
The invention also provides a lighting device with the diode.
The invention also provides a display device with the diode.
According to an aspect of the present invention, there is provided a combined luminescent material comprising: a host material and a guest material;
the host material has a transition dipole moment horizontal orientation degree of more than 80%;
the guest material is at least one of a thermally activated delayed fluorescence material and a conventional fluorescence material.
According to a preferred embodiment of the present invention, at least the following advantages are provided:
(1) the combined luminescent material provided by the invention does not contain precious metal elements or rare earth elements, and is beneficial to reducing the raw material cost of the material.
(2) In the existing organic light-emitting diode, because of the difference of refractive indexes among a light-emitting material, a matrix and air, the phenomenon that light is limited in a certain layer of structure can occur, and the external quantum efficiency of the diode is further reduced; according to the combined luminescent material provided by the invention, a host material with high transition dipole moment horizontal orientation degree and a luminescent guest material are combined, so that the host material can be sensitized to the guest material, and the transition dipole moment horizontal orientation degree of the guest material is further improved; after the material is used for the light-emitting diode, the direction of light is vertical to the interface among the diode substrate, the light-emitting layer and the air, so that the problem that the light is limited in a certain layer structure is relieved and even avoided, and the light extraction efficiency and the external quantum efficiency of the diode can be improved.
(3) Although the hole transport material and the electron transport material are mixed to be used as the host material, the horizontal orientation degree of the transition dipole moment of the combined luminescent material can also be improved, but the method needs two host materials and at least one guest material, and has complex manufacture and high cost; in the technical scheme provided by the invention, only one main material can be adopted, the manufacturing is simple, and the price is low.
(4) After the combined luminescent material provided by the invention is applied to a diode, the principle of improving the external quantum efficiency is not to improve the external quantum efficiency of the diode (namely, improve the internal quantum efficiency) by improving the charge balance of the diode, but to sense a guest material by a host material with high transition dipole moment levelness (namely, improve the light extraction efficiency), so that the principle of the invention is simpler and is easier for industrialized production.
(5) Compared with the direct development of a guest material (luminescent material) with high transition dipole moment horizontal orientation degree, the host material with high transition dipole moment horizontal orientation degree is utilized and mixed with the guest material, so that the transition dipole moment horizontal orientation degree of the guest material is improved, and the development cost of the novel guest material is saved.
In some embodiments of the present invention, the proportion of the guest material in the combined light emitting material is 1 wt% to 8 wt%.
In some embodiments of the present invention, the host material is a thermally activated delayed fluorescence material.
In some preferred embodiments of the invention, the host material has a singlet triplet exchange energy < 0.1 eV.
In some embodiments of the present invention, the host material is at least one of the materials represented by the following structural formulas:
Figure BDA0003016186720000031
the materials shown in the structural formula are DSpiroAC-TRZ, DSpiroS-TRZ, Tspiros-TRZ, TspirF-TRZ, SpiroAC-TRZ, CZDBA, TZ-SBA and IPN-SBA in sequence.
In some embodiments of the present invention, the host material is prepared according to the following formulas (1) to (7):
Figure BDA0003016186720000041
Figure BDA0003016186720000042
Figure BDA0003016186720000043
Figure BDA0003016186720000051
Figure BDA0003016186720000052
Figure BDA0003016186720000053
Figure BDA0003016186720000061
in some embodiments of the invention, the guest material is at least one of the materials represented by the following structural formula:
Figure BDA0003016186720000062
the materials shown in the structural formula are abbreviated as TPA-AQ, DBXZ-2FDBPZ, DSA-Ph (CAS number: 358374-59-1), TPA-QCN, a4, DCM (CAS number: 51325-91-8) and DCJTB (CAS number: 200052-70-6) in sequence.
The DSA-Ph, DCM and DCJTB are the traditional fluorescent materials; the TPA-AQ, DBXZ-2FDBPZ, TPA-QCN and a4 are the thermally activated delayed fluorescence materials.
In some embodiments of the present invention, the guest material is prepared according to the following formulas (8) to (11):
Figure BDA0003016186720000071
Figure BDA0003016186720000072
Figure BDA0003016186720000073
Figure BDA0003016186720000081
when the host material and the guest material are mixed, the horizontal orientation degree of the transition dipole moment of the guest material can be improved, that is, the host material has sensitization effect on the guest material.
According to still another aspect of the present invention, there is provided a diode including an anode layer, a hole transport layer, a light emitting layer, an electron transport layer, and a cathode layer, which are sequentially disposed; the luminescent layer is made of the combined luminescent material.
The diode according to a preferred embodiment of the invention has at least the following advantageous effects:
according to the diode provided by the invention, through the mutual matching of materials of all the components, the horizontal orientation degree of transition dipole moment of an object material can be improved, and further, the external quantum efficiency is obviously improved.
In some preferred embodiments of the present invention, the diode includes a substrate, an anode layer, a hole transport layer, an electron blocking layer, a light emitting layer, an exciton blocking layer, an electron transport layer, and a cathode layer, which are sequentially disposed; the luminescent layer is made of the combined luminescent material.
In some embodiments of the present invention, the substrate is made of at least one of glass, quartz, sapphire, polyimide, polyester materials and metal-based materials.
In some preferred embodiments of the present invention, the polyester-based material is at least one of polyethylene terephthalate, and polyethylene naphthalate.
In some preferred embodiments of the present invention, when the substrate is made of the metal-based material, the metal-based material is at least one of a pure metal or a metal alloy.
In some embodiments of the present invention, the anode layer is made of a metal oxide-based material.
In some preferred embodiments of the present invention, the metal oxide-based material is at least one of indium tin oxide, fluorine-doped tin dioxide, zinc oxide, and indium gallium zinc oxide.
In some embodiments of the present invention, the hole transport layer is made of 4,4' -cyclohexylbis (N, N-bis (4-methylphenyl) aniline) (TAPC), N ' -diphenyl-N, N ' - (1-naphthyl) -1,1' -biphenyl-4, 4' -diamine (NPB), 4' -tris [ phenyl (m-tolyl) amino ] triphenylamine (m-MTDATA), N ' -diphenyl-N, N ' -bis (3-methylphenyl) -1,1' -biphenyl-4, 4' -diamine (TPD), and N, N ' -diphenyl-N, N ' - (1-naphthyl) -1,1' -biphenyl-4, 4' -diamine (NPD).
In some preferred embodiments of the present invention, the hole transport layer is 4,4' -cyclohexyl bis (N, N-bis (4-methylphenyl) aniline) (TAPC).
In some embodiments of the present invention, the electron barrier material is at least one of 1, 3-dicarbazole-9-ylbenzene (mCP) and 4,4',4 ″ -tris (carbazol-9-yl) triphenylamine (TCTA).
In some preferred embodiments of the present invention, the electron blocking layer material is 1, 3-dicarbazole-9-ylbenzene (abbreviated as mCP).
In some embodiments of the present invention, the exciton blocking layer is bis [2- [ (oxo) diphenylphosphino ] phenyl ] ether (DPEPO).
In some embodiments of the present invention, the electron transport layer is made of 3,3' - [5' - [3- (3-pyridyl) phenyl ] [1,1':3', 1' -terphenyl ] -3, 3' -diyl ] bipyridine (abbreviated as TmPyPb), 4, 6-bis (3, 5-bis (3-pyrid) ylphenyl) -2-methylpyrimidine (abbreviated as B3PYMPM), 1, 3-bis (3, 5-bipyridin-3-ylphenyl) benzene (abbreviated as B3PyPb), (8-hydroxyquinoline) lithium (abbreviated as Liq), 1,3, 5-tris (1-phenyl-1H-benzimidazol-2-yl) benzene (abbreviated as TPBi), and 1,3, 5-tris (4-pyrid-3-ylphenyl) benzene (abbreviated as TpPyPB).
In some preferred embodiments of the present invention, the electron transport layer is 3,3'- [5' - [3- (3-pyridyl) phenyl ] [1,1':3',1 "-terphenyl ] -3, 3" -diyl ] bipyridine (abbreviated as TmPyPb).
In some embodiments of the present invention, the cathode layer is made of a metal-based material.
In some preferred embodiments of the present invention, the cathode layer is made of at least one of metal aluminum, metal gold, metal silver, metal magnesium, metal lithium, and metal alloys thereof.
In some preferred embodiments of the present invention, the diode further comprises a second cathode layer disposed between the light emitting layer and the cathode layer.
In some further preferred embodiments of the present invention, the second cathode layer is made of at least one of lithium fluoride, cesium fluoride and rubidium fluoride.
In some embodiments of the present invention, the method for preparing the diode comprises the following steps:
s1, providing a composite plate formed by compounding the anode layer and the substrate;
and S2, sequentially preparing the hole transport layer, the electron blocking layer, the light emitting layer, the exciton blocking layer, the electron transport layer and the cathode layer on the surface of the anode layer of the composite plate to obtain the diode.
The preparation method according to a preferred embodiment of the present invention has at least the following advantageous effects:
the preparation method provided by the invention is simple and convenient for industrial production.
In some embodiments of the present invention, the method further comprises cleaning the composite panel between step S1 and step S2.
In some embodiments of the present invention, in step S2, the method for preparing the hole transport layer, the electron blocking layer, the light emitting layer, the exciton blocking layer, the electron transport layer and the cathode layer is vacuum evaporation.
According to yet another aspect of the present invention, there is provided a lighting device including the diode.
According to still another aspect of the present invention, there is provided a display device including the diode.
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The invention is further described with reference to the following figures and examples, in which:
FIG. 1 is a photoluminescence spectrum of TPA-AQ;
FIG. 2 is a photoluminescence spectrum of a combined luminescent material obtained in example 1 of the present invention;
FIG. 3 is a photoluminescence spectrum of a combined luminescent material obtained in example 2 of the present invention;
FIG. 4 is a photoluminescence spectrum of a combined luminescent material obtained in example 3 of the present invention;
FIG. 5 is a photoluminescence spectrum of a combined luminescent material obtained in example 4 of the present invention;
FIG. 6 is a current density-voltage-luminance curve of a diode obtained in example 5 of the present invention;
FIG. 7 is a graph of external quantum efficiency versus current density for the diode obtained in example 5 of the present invention;
FIG. 8 shows the diode obtained in example 5 of the present invention at 100 candelas per square meter (cd/m)2) Electroluminescence spectrum at brightness;
FIG. 9 is a current density-voltage-luminance curve of a diode obtained in example 6 of the present invention;
FIG. 10 is an external quantum efficiency-luminance curve of a diode obtained in example 6 of the present invention;
FIG. 11 shows the diode obtained in example 6 of the present invention at 100cd/m2Electroluminescence spectrum at brightness;
FIG. 12 is a photoluminescence spectrum of a combined luminescent material obtained in comparative example 1 of the present invention;
FIG. 13 is a photoluminescence spectrum of a combined luminescent material obtained in comparative example 2 of the present invention;
FIG. 14 is a photoluminescence spectrum of a combined luminescent material obtained in comparative example 3 of the present invention;
FIG. 15 is a photoluminescence spectrum of a combined luminescent material obtained in comparative example 4 of the present invention;
FIG. 16 is a photoluminescence spectrum of a combined luminescent material obtained in comparative example 5 of the present invention;
FIG. 17 is a current density-voltage-luminance curve of a diode obtained in comparative example 6 of the present invention;
FIG. 18 is an external quantum efficiency-current density curve of a diode obtained in comparative example 6 of the present invention;
FIG. 19 shows the diode obtained in comparative example 6 of the present invention in a range of 100cd/m2Electroluminescence spectrum at brightness;
FIG. 20 is a current density-voltage-luminance curve of a diode obtained in comparative example 7 of the present invention;
FIG. 21 is a graph of external quantum efficiency versus current density for the diode obtained in comparative example 7 of the present invention;
FIG. 22 shows the diode obtained in comparative example 7 of the present invention at 100cd/m2Electroluminescence spectrum at brightness;
FIG. 23 is a current density-voltage-luminance curve of a diode obtained in comparative example 8 of the present invention;
FIG. 24 is a graph of external quantum efficiency versus current density for a diode obtained in comparative example 8 of the present invention;
FIG. 25 shows the diode obtained in comparative example 8 of the present invention at 100cd/m2Electroluminescence spectrum at brightness.
Detailed Description
The concept and technical effects of the present invention will be clearly and completely described below in conjunction with the embodiments to fully understand the objects, features and effects of the present invention. It is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments, and those skilled in the art can obtain other embodiments without inventive effort based on the embodiments of the present invention, and all embodiments are within the protection scope of the present invention.
Example 1
The present embodiment provides a combined luminescent material, wherein:
comprises 5 wt% of guest material and 95 wt% of host material;
the main material is DSpiroAC-TRZ, is thermal activation delayed fluorescence with high transition dipole moment horizontal orientation, the single triplet state exchange energy is 0.04eV, and the preparation method is shown in formula (1);
the guest material is TPA-AQ, and the preparation method is shown as a formula (8).
Example 2
The present embodiment provides a combined luminescent material, wherein:
comprises 5 wt% of guest material and 95 wt% of host material;
the main material is DSpiroS-TRZ, which is thermal activation delayed fluorescence with high transition dipole moment horizontal orientation, the single-triplet state exchange energy is 0.05eV, and the preparation method is shown as formula (2);
the guest material was the same as that used in example 1.
Example 3
The present embodiment provides a combined luminescent material, wherein:
comprises 5 wt% of guest material and 95 wt% of host material;
the host material was the same as in example 1;
the guest material is DBXZ-2FDBPZ, and the preparation method is shown as the formula (9).
Example 4
The present embodiment provides a combined luminescent material, wherein:
comprises 5 wt% of guest material and 95 wt% of host material;
the host material was the same as in example 2;
the guest material was the same as in example 3.
Example 5
In this embodiment, a diode is prepared, and the specific process is as follows:
s1, selecting ITO conductive glass with the size of 30mm multiplied by 30mm (wherein the substrate glass of the conductive glass is a substrate of a diode, and indium tin oxide plated on the conductive glass is an anode layer of the diode);
s2, sequentially carrying out ultrasonic washing on the ITO conductive glass obtained in the step S1 by taking the following solvents as media: tetrahydrofuran (ultrasound for 15min), isopropanol (ultrasound for 15min), detergent (aqueous solution of common liquid detergent) (ultrasound for 15min), deionized water (total ultrasound for 45min, and exchange of deionized water every 15min), and isopropanol (ultrasound for 15 min);
s3, drying the ITO conductive glass obtained in the step S2 at 80 ℃;
s4, transferring the quartz plate obtained in the step S3 to an evaporation coating cavity of vacuum evaporation coating equipment, and vacuumizing the evaporation coating cavity through a mechanical pump and a molecular pump; when the vacuum value in the evaporation chamber reaches 4 multiplied by 10-4And when Pa is applied, a hole transport layer TAPC (30nm), an electron blocking layer mCP (10nm), a light emitting layer (the material of the combined light emitting material obtained in example 1, the thickness is 30nm), an exciton blocking layer DPEPO (10nm), an electron transport layer TmPyPb (40nm), a second cathode layer (the material of lithium fluoride, the thickness is 1nm), and cathode metal Al (150nm) are sequentially deposited, so that a diode is obtained.
Example 6
This example produced a diode, differing from example 5 in that:
the material of the light-emitting layer was the combined light-emitting material obtained in example 2.
Comparative example 1
This comparative example prepared a combined luminescent material, which differs from example 1 in that:
the host material is a commercially available DMAC-TRZ material (CAS number 1628752-98-6), the horizontal orientation degree of transition dipole moment is 70%, the single triplet state exchange energy is 0.06eV, and the structural formula of the host material is as follows:
Figure BDA0003016186720000131
comparative example 2
This comparative example prepared a combined luminescent material, which differs from example 1 in that:
the host material was a commercially available CBP material (CAS number 58328-31-7) with a 77% horizontal orientation of transition dipole moment, and the structural formula of the host material was as follows:
Figure BDA0003016186720000141
comparative example 3
This comparative example prepared a combined luminescent material, which differs from example 3 in that:
the addition ratio of the guest material in the combined light-emitting material was 10 wt%.
Comparative example 4
This comparative example prepared a combined luminescent material, which differs from example 3 in that:
the host material was a commercially available DMAC-TRZ material (CAS number 1628752-98-6).
Comparative example 5
This comparative example prepared a combined luminescent material, which differs from example 3 in that:
the host material was a commercially available CBP material (CAS number 58328-31-7).
Comparative example 6
This comparative example produced a diode, which differs from example 5 in that:
the material of the luminescent layer was the combined luminescent material obtained in comparative example 1.
Comparative example 7
This comparative example produced a diode, which differs from example 5 in that:
the material of the luminescent layer was the combined luminescent material obtained in comparative example 2.
Comparative example 8
This comparative example produced a diode, which differs from example 5 in that:
the material of the luminescent layer was the combined luminescent material obtained in comparative example 3.
Test examples
In the first aspect of this test example, photoluminescence spectra of the combined luminescent materials obtained in examples 1 to 4 and comparative examples 1 to 5 and pure TPA-AQ were measured, and the horizontal orientation of transition dipole moment of the guest material was obtained by fitting the obtained spectra.
The test method comprises the following steps:
C1. selecting a 30mm multiplied by 30mm quartz plate, and sequentially carrying out ultrasonic treatment on tetrahydrofuran, isopropanol, a detergent, deionized water (three times) and the isopropanol for 15min respectively to remove oil stains and dust on the surface;
C2. putting the quartz plate obtained in the step C1 into an oven at 80 ℃ for drying;
C4. transferring the quartz plate obtained in the step C2 into an evaporation coating cavity of vacuum evaporation coating equipment, and vacuumizing the evaporation coating cavity through a mechanical pump and a molecular pump;
C5. when the vacuum value in the evaporation chamber reaches 4 multiplied by 10-4When Pa, evaporating a luminescent film with the thickness of 30nm, wherein the luminescent film is made of the combined luminescent materials obtained in examples 1-4, the combined luminescent materials obtained in comparative examples 1-5 or TPA-AQ;
C6. packaging the part obtained in the step C5 by a glass cover plate and epoxy resin type packaging glue in a glove box which is anhydrous and oxygen-free and is filled with high-purity nitrogen;
C7. the part obtained in step C6 was tested on a Phelos device by Fluxim, switzerland to obtain an angle-dependent photoluminescence spectrum;
C8. and (4) performing simulation fitting on the photoluminescence spectrum obtained in the step C7 through Setfos software to obtain the horizontal orientation degree of the transition dipole moment of the combined luminescent material.
The photoluminescence spectrum of TPA-AQ is shown in FIG. 1; photoluminescence spectra of the combined luminescent materials obtained in examples 1 to 4 are shown in fig. 2 to 5; photoluminescence spectra of the combined luminescent materials obtained in comparative examples 1 to 5 are shown in fig. 12 to 16; wherein in the above graph, 100% represents a completely horizontal orientation and 67% represents a completely random orientation, the two curves being standard contrast curves; the other line is the actual test curve.
The results of the horizontal orientation of the transition dipole moments of the combined luminescent materials are shown in table 1.
TABLE 1 degree of horizontal orientation of transition dipole moment of combined luminescent materials
TPA-AQ Example 1 Example 2 Example 3 Example 4
Degree of horizontal orientation 85％ 92％ 91％ 77％ 74％
Comparative example 1 Comparative example 2 Comparative example 3 Comparative example 4 Comparative example 5
Degree of horizontal orientation 74％ 84％ 85％ 68％ 70％
The test results in Table 1 show that in the host material having a high horizontal orientation of transition dipole moment, the guest material is sensitized to increase the horizontal orientation of transition dipole moment of the guest material (TPA-AQ and examples 1 to 2), but if the amount of the guest material added (comparative example 3) or the selection of the host material does not satisfy the conditions provided by the present invention, the effect of sensitizing the guest material cannot be achieved, and on the contrary, the horizontal orientation of transition dipole moment of the guest material is decreased. Another aspect of table 1 shows that the higher the horizontal orientation of the host material transition dipole moment, the more pronounced the sensitization effect on the guest material.
In the second aspect of the present test example, the current density-voltage-luminance curves, the external quantum efficiency-current density curves, the electroluminescence spectra of the diodes obtained in examples 5 to 6 and comparative examples 6 to 10 were tested, and the maximum external quantum efficiency, the maximum current efficiency, and the power efficiency were read from the data curves; the test results were obtained using a PR745 apparatus manufactured by Photo Research, Inc. in the United states.
The performance of the diodes obtained in example 5 is shown in FIGS. 6-8; the performance of the diode obtained in example 6 is shown in FIGS. 9-11; the performance of the diode obtained in comparative example 6 is shown in FIGS. 17-19; the performance of the diode obtained in comparative example 7 is shown in FIGS. 20-22; the performance of the diodes obtained in comparative example 8 is shown in FIGS. 23 to 25.
The performance of the diodes is summarized in table 2.
TABLE 2 summary of the properties of the diodes
Example 5 Example 6 Comparative example 6 Comparative example 7 Comparative example 8
Maximum external quantum efficiency 17.8％ 20.5％ 7.5％ 12.8％ 11.6％
Maximum current efficiency cd/A 32.7 40.8 13.4 22.9 14.6
Maximum power efficiency lm/W 30.2 35.6 10.5 16.3 13.5
The results in table 2 show that it is feasible to sensitize the guest material (light emitting material) using the host material with a high transition dipole moment horizontal orientation, and to improve the transition dipole moment horizontal orientation of the guest material, and that such a combined light emitting material can effectively improve the maximum external quantum efficiency, the maximum current efficiency, and the maximum power efficiency of the diode.
The embodiments of the present invention have been described in detail with reference to the accompanying drawings, but the present invention is not limited to the above embodiments, and various changes can be made within the knowledge of those skilled in the art without departing from the gist of the present invention. Furthermore, the embodiments of the present invention and the features of the embodiments may be combined with each other without conflict.

Claims (10)

1. A composite luminescent material, comprising: a host material and a guest material;
the host material has a transition dipole moment horizontal orientation degree of more than 80%;
the guest material is at least one of a thermally activated delayed fluorescence material and a conventional fluorescence material.
2. The combined light-emitting material according to claim 1, wherein the proportion of the guest material in the combined light-emitting material is 1 to 8 wt%.
3. The composite luminescent material according to claim 1, wherein the host material is a thermally activated delayed fluorescence material; preferably, the host material has a single triplet exchange energy of less than 0.1 eV; further preferably, the host material is at least one of materials shown in the following structural formula:
Figure FDA0003016186710000011
4. the composite luminescent material according to claim 1, wherein the guest material is at least one of materials represented by the following structural formula:
Figure FDA0003016186710000021
5. a diode is characterized by comprising an anode layer, a hole transport layer, a light emitting layer, an electron transport layer and a cathode layer which are arranged in sequence; the light-emitting layer is made of the combined light-emitting material according to any one of claims 1 to 4.
6. The diode of claim 5, wherein the anode layer is a metal oxide based material.
7. The diode of claim 5, wherein the cathode layer is a metal-based material; preferably, the electron transport layer is made of at least one of 3,3'- [5' - [3- (3-pyridyl) phenyl ] [1,1':3',1 '-terphenyl ] -3, 3' -diyl ] bipyridine, 4, 6-bis (3, 5-bis (3-pyridyl) phenylphenyl) -2-methylpyrimidine, 1, 3-bis (3, 5-bipyridin-3-ylphenyl) benzene, (8-hydroxyquinoline) lithium, 1,3, 5-tris (1-phenyl-1H-benzimidazol-2-yl) benzene and 1,3, 5-tris (4-pyridin-3-ylphenyl) benzene.
8. The diode of claim 5, wherein said hole transport layer is selected from the group consisting of 4,4' -cyclohexyl bis (N, N-bis (4-methylphenyl) aniline), N ' -diphenyl-N, N ' - (1-naphthyl) -1,1' -biphenyl-4, 4' -diamine, 4,4' -tris [ phenyl (m-tolyl) amino ] triphenylamine, N ' -diphenyl-N, N ' -bis (3-methylphenyl) -1,1' -biphenyl-4, 4' -diamine, and N, N ' -diphenyl-N, N ' - (1-naphthyl) -1,1' -biphenyl-4, 4' -diamine.
9. A lighting device comprising the diode according to any one of claims 5 to 8.
10. A display device comprising the diode according to any one of claims 5 to 8.
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