CN113203792A - TMR multi-array deep defect weak magnetic detection device - Google Patents
TMR multi-array deep defect weak magnetic detection device Download PDFInfo
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Abstract
A TMR multi-array deep defect weak magnetic detection device belongs to the detection field. The TMR array detection probe comprises a double-excitation signal generation module, a power amplifier module, a TMR array detection probe, a power supply module, a preceding stage amplification circuit, a filter circuit, a subsequent stage amplification circuit, a phase-locked amplification circuit, a data acquisition module and an upper computer; the dual-excitation signal generation module outputs two-channel sinusoidal signals or pulse signals, and the two-channel sinusoidal signals or pulse signals are amplified and transmitted to differential dual-excitation coils symmetrically arranged in a TMR array detection probe through the power amplifier module; the TMR sensor array detection element in the TMR array detection probe collects an induction magnetic field distortion information signal at a deep defect of a detected metal material component, the induction magnetic field distortion information signal is processed by a pre-stage amplification circuit, a filter circuit, a post-stage amplification circuit and a phase-locked amplification circuit, a detection signal is transmitted to an upper computer through a data acquisition module, a weak magnetic field distortion image at the defect is displayed, and the detection of the surface, the sub-surface and the deep defect of the metal material component is realized.
Description
Technical Field
The invention belongs to the field of electromagnetic nondestructive detection, and particularly relates to a TMR multi-array deep defect weak magnetic detection device.
Background
Electromagnetic detection is usually applied to detect defects such as microcracks of key parts such as aero-engines, ships, railway steel rails, high-speed rail locomotives and the like, and has important significance for guaranteeing reliable and safe operation of equipment.
The electromagnetic detection technology is a novel nondestructive detection method which develops rapidly in recent years, and based on the theory of electromagnetism, the defect detection and the performance test are carried out on in-service equipment and components by taking the change of the electromagnetic performance of materials as a judgment basis.
At present, a wound coil detection probe is adopted at an excitation end and a receiving end of eddy current detection, due to the influence of a skin effect, the sensitivity of the probe is greatly weakened due to the reduction of excitation frequency, the deep defect of a detected piece is not affected, and the bottleneck restricting the development of eddy current detection is formed.
In China, some important equipment is in long-term service under severe working environments such as high temperature, high pressure, high rotating speed, alternating load, strong corrosion, high-density energy conversion and the like, and defects below the surface layer are large in harm and difficult to detect.
How to design an electromagnetic detection device capable of effectively detecting deep defects of detected materials and meeting the requirements of required detection precision, resolution and sensitivity is a problem to be solved urgently in practical research work.
Disclosure of Invention
The invention aims to solve the technical problem of providing a TMR multi-array deep defect weak magnetic detection device. The TMR magnetoresistive sensor group is adopted to replace a conventional coil probe, the bottleneck that the conventional eddy current coil probe cannot detect deep defects is broken through, the weak magnetic detection of the deep defects is realized, the detection sensitivity is up to 0.000001 Tesla, the signal resolution is up to 0.5mV, the accuracy is high, and the method can be used for detecting the deep defects of metal components.
The technical scheme of the invention is as follows: the TMR multi-array deep defect weak magnetic detection device is characterized in that:
the deep defect weak magnetic detection device consists of a double-excitation signal generation module, a power amplifier module, a TMR array detection probe, a power supply module, a preceding stage amplification circuit, a filter circuit, a subsequent stage amplification circuit, a phase-locked amplification circuit, a data acquisition module and an upper computer;
the double-excitation signal generation module is used for outputting two-channel sinusoidal signals or pulse signals; sinusoidal signals or pulse signals of the two channels are amplified by the power amplifier module and then transmitted to differential double excitation coils symmetrically arranged in the TMR array detection probe, so that eddy current is generated in a piece to be tested;
the output end of the double-excitation signal generation module is also connected with the input end of the phase-locked amplifying circuit, and the output signal of the double-excitation signal generation module is used as a reference signal of the phase-locked amplifying circuit;
the TMR array detection probe is used for detecting a magnetic field change signal of a piece to be detected and outputting a detection signal;
the power supply module provides working voltage for the TMR array detection probe;
the front-stage amplifying circuit, the filter circuit and the rear-stage amplifying circuit are used for respectively carrying out primary amplification, filtering and secondary amplification on an output signal of each TMR sensor in the TMR array detection probe;
the TMR array detection probe is provided with an array detection element consisting of 8 TMR sensors between two exciting coils, and the 8 TMR sensors are arranged and welded on a PCB in a line; respectively connecting a capacitor in parallel on 8 channels corresponding to the 8 TMR sensors on the PCB to eliminate mutual inductance caused by too close distance of the coil probe;
the TMR sensor array detection element in the TMR array detection probe collects an induction magnetic field distortion information signal at a deep defect of a detected metal material component, then carries out signal processing through a corresponding pre-stage amplifying circuit, a filter circuit, a post-stage amplifying circuit and a phase-locked amplifying circuit, transmits a detection signal to an upper computer through a data acquisition module, displays a weak magnetic field distortion image of the defect on the upper computer, realizes weak magnetic detection of the defect, and realizes detection of the surface, the subsurface and the deep defect of the metal material component.
Specifically, two channels of double-excitation sinusoidal signals or pulse signals output by the double-excitation signal generation module are independent and incoherent;
the differential double-coil structure comprises a plurality of excitation coils, wherein the excitation coils are symmetrically arranged, the structure, size and turn number parameters of the two excitation coils are the same, and the differential double-coil structure is connected in series with an excitation circuit to realize the magnetic field combination offset at the TMR sensor, so that the relative change rate of a weak magnetic field at the defect position is improved, and the defect detection sensitivity is improved.
Specifically, the power supply module comprises a power supply module with 5V output;
the amplification factor of the front-stage amplification circuit and the amplification factor of the rear-stage amplification circuit are adjustable within the range of 1-100.
Furthermore, 8 front-stage amplifying circuits, filter circuits and rear-stage amplifying circuits are correspondingly arranged for 8 TMR sensors, and the 8 amplifying circuits realize synchronous adjustment and meet the working range of the phase-locked amplifier.
Specifically, the phase-locked amplifying circuit is composed of an analog multiplier and a low-pass filter, wherein the analog multiplier inputs the detection signal e simultaneously1And a reference signal e2After two input signals are operated and processed by an analog multiplier, a difference frequency component and a sum frequency component are output;
for the phase-locked amplifying circuit, when the frequency of the reference signal is the same as that of the detection signal, the signal is output to eliminate the interference of other frequency signals and improve the signal-to-noise ratio;
the low-pass filter is a second-order active low-pass filter circuit.
Further, for the filter circuit, when the TMR output signal frequency is 50Hz-1MHz, the cut-off frequency of the second-order high-pass filter is 50-75 Hz; when the TMR output signal frequency is below 50Hz, the cut-off frequency of the second-order low-pass filter is 35-50 Hz.
Specifically, a power supply end of each operational amplifier in the phase-locked amplifying circuit is connected in parallel with a pair of capacitors, so that power supply interference is reduced; the cut-off frequency of the low-pass filter of the phase-locked amplifying circuit is 20 Hz.
Specifically, the data acquisition module adopts 2-piece 4-channel differential voltage signal NI acquisition cards, realizes TMR output signal acquisition through a Labview program, and transmits the TMR output signals to an I/O end of an upper computer in real time to perform data display, acquisition and storage.
Further, the induced magnetic field distortion information at least includes leakage flux.
Compared with the prior art, the invention has the advantages that:
1) the invention provides a weak magnetic detection device which uses a TMR sensor (also called TMR chip) to replace a conventional detection coil, has the characteristics of high sensitivity and high resolution, breaks through the bottleneck that a conventional eddy current detection instrument cannot detect deep defects, and can realize the detection of the surface, the sub-surface and the deep defects of a metal material component by using the weak magnetic detection device for the deep defects designed by the invention;
2) in the technical scheme of the invention, two channels (or called two channels) of double-excitation sinusoidal signals or pulse signals are output, the two channels of excitation signals are independent and mutually incoherent, the excitation coils are of a differential double-coil structure which is symmetrically arranged, the two excitation coils have the same structure size, the same number of turns and other parameters, and the coils are connected in series with the excitation circuit to realize the magnetic field combination offset at a detection element, namely the output of a detection probe is approximate to zero, so that the relative change rate of a weak magnetic field at a defect is improved, and the sensitivity of defect detection is improved;
3) in the technical scheme of the invention, a detection element consisting of 8 TMR sensor arrays is arranged between two rectangular exciting coils, in order to avoid missing detection and interference, the 8 TMR chip arrays are arranged and welded on a PCB in a line, the minimum safety distance between the two TMR chip arrays is 0.3mm, 8 channels on the PCB are respectively connected with capacitors in parallel to ensure the safety of a circuit, thus greatly improving the detection efficiency and simultaneously avoiding mutual inductance caused by too close distance of a conventional coil probe;
4) the phase-locked amplifying circuit in the technical scheme of the invention consists of an analog multiplier and a low-pass filter, wherein two same-frequency signals are input into the analog multiplier, and the output after passing through the analog multiplier consists of a difference frequency component and a sum frequency component, so that the interference of other frequency signals is eliminated, and the signal-to-noise ratio is improved;
5) the TMR multi-array deep defect weak magnetic detection device in the technical scheme of the invention has the advantages of simple structure, convenient operation, high detection sensitivity up to 0.000001 Tesla, high signal resolution up to 0.5mV and high detection precision, overcomes the bottleneck of conventional eddy current detection of sub-surface defects, and can be used for deep defect detection of metal components.
Drawings
FIG. 1 is a block diagram of the TMR multi-array deep defect flux weakening detection device of the present invention;
FIG. 2 is a circuit diagram of a power amplifier circuit of the present invention;
FIG. 3 is a printed circuit layout of an 8 TMR multi-array circuit board of the present invention;
FIG. 4 is a data collection operator interface of the present invention;
FIG. 5 is a diagram of signals detected by the TMR multi-array weak magnetic detection device of the present invention for the defect of the deep layer of titanium alloy;
FIG. 6 is an image of a TMR multi-array weak magnetic detection device of the present invention for detecting defects of a deep layer of titanium alloy.
Detailed Description
In order to better understand the technical solution of the present invention, the following description is clearly and completely made in conjunction with the accompanying drawings and the technical solutions in the embodiments, and the technical solution of the present invention is further explained.
The test object of this example was a test piece of TC4 board having a size of 200 mm. times.400 mm. times.5 mm. Processing 6 groove-shaped defects in total in the same horizontal line direction of the test piece, detecting the defects from the reverse side, wherein the depth of the detected defects 1 from the surface is 3mm, and the defect size (length multiplied by width multiplied by height) is 6mm multiplied by 0.2mm multiplied by 2 mm; the depth of the defect 2 from the surface is 4mm, and the defect size is 6mm multiplied by 0.2mm multiplied by 1 mm; the depth of the defect 3 from the surface is 3mm, and the defect size is 6mm multiplied by 0.4mm multiplied by 2 mm; the depth of the defect 4 from the surface is 4mm, and the size of the defect is 6mm multiplied by 0.4mm multiplied by 1 mm; the depth of the defect 5 from the surface is 3mm, and the defect size is 3mm multiplied by 0.2mm multiplied by 2 mm; the depth of the defect 6 from the surface was 3mm, and the defect size was 12mm × 0.2mm × 2 mm.
The technical scheme of the invention provides a TMR multi-array deep defect weak magnetic detection device, which is characterized by comprising the following components: the device comprises a double-excitation signal generation module, a power amplifier module, a TMR array detection probe, a power supply module, a preceding stage amplification circuit, a filter circuit, a subsequent stage amplification circuit, a phase-locked amplification circuit, a data acquisition module and an upper computer.
Wherein the dual excitation signal generation module: outputting two-channel double-excitation sinusoidal signals or pulse signals, wherein the two excitation signals are independent and mutually incoherent, the excitation frequency is DC-1 MHz, and the computer end issues an instruction through software to realize that the phase of the excitation signal is adjustable at 0-360 degrees; the range of the signal output by the DDS is 0-3V, the precision of the output voltage is 1mV, the amplitude of the signal generated by the DDS is amplified to 0-10V (the knob is adjustable) after passing through the low-pass filter, and the resolution is 5 mV.
The power amplifier module in the above scheme: because the output power of the signal generator is small, the power amplifier is designed to improve the load driving capacity of the power amplifier, the double-excitation signal is amplified to +/-75V, the effective value of the current is 0-2A, and the amplified excitation signal is transmitted to the differential double-excitation coils symmetrically arranged in the TMR array detection probe through the external functional end.
Furthermore, the power amplifier selects a TDA7294 chip, a low-noise and low-distortion bipolar transistor circuit is adopted at the front stage, a high-voltage-withstanding and high-current DMOS tube is adopted at the final stage for buffer output, the power supply voltage input range is wider, the power supply voltage input range is +/-10V to +/-40V, the frequency response is 20Hz-20kHz, and the experimental requirements are met; the output power can reach 100W, so that the coil is ensured to generate eddy current which is easy to detect defects, and the input coupling capacitor is adopted to filter out direct current interference; since the connected load is a coil, it is necessary to perform phase compensation by a resistor and a capacitor to eliminate self-excitation.
The power module in the above scheme: A5V power supply module is integrated on the part of the exciting circuit module to provide working voltage for the TMR array sensor, and capacitors are respectively connected in parallel on 8 channels to ensure the safety of the circuit.
The preceding stage amplifying circuit in the above scheme: in order to amplify weak detection signals without distortion, a primary amplifying circuit is designed before filtering; in the test process, when the working voltage of the sensor is 5V, the voltage value output by the TMR is about 200mV, the amplification factor is adjustable within the range of 1-100, the adjustment resolution can be set into a coarse adjustment mode and a fine adjustment mode, the coarse adjustment resolution is 1 time, the fine adjustment resolution is 0.1 time, and the digital button setting is adopted.
The filter circuit in the above scheme: when the TMR output signal frequency is 50Hz-1MHz, the cut-off frequency of a second-order high-pass filter is designed to be 50-75 Hz, and power frequency interference and direct-current components are filtered; when the TMR output signal frequency is below 50Hz, the cut-off frequency of the second-order low-pass filter is designed to be 35-50 Hz.
The post-stage amplifying circuit in the scheme comprises: the amplification factor of the signal amplitude is adjustable within the range of 1-100 times, and the 8-path amplification circuit realizes synchronous adjustment and meets the working range of the phase-locked amplifier.
The phase-locked amplifying circuit in the above scheme: the analog amplifier consists of an analog multiplier and a low-pass filter, wherein an OPA627 is adopted to amplify signals, the analog bandwidth of an AD630 is 2MHz, and the range of input signals is from hundreds of microvolts to the range of power supply; when the analog multiplier works, a detection signal is input through an OUT1 port, a reference signal is input through a Pr port, a filter of the circuit adopts a second-order active low-pass filter, the cut-off frequency is 20Hz, the signal voltage output amplitude range of the parallel 8-channel phase-locked amplifying circuit is-10V, a signal output line of the parallel 8-channel phase-locked amplifying circuit is processed into a BNC form and is externally arranged, and the parallel 8-channel phase-locked amplifying circuit is convenient to connect with a signal acquisition system.
Furthermore, the phase-locked amplifying circuit is composed of an analog multiplier and a low-pass filter, wherein the analog multiplier inputs the detection signal e simultaneously1And a reference signal e2Are respectively as
And
wherein E1、E2To detect the amplitude of the signal and the reference signal,f1、f2in order to detect the frequency of the signal and the reference signal,
is the phase of the detection signal and the reference signal. After the two input signals pass through the analog multiplier, the output signals are:
namely:
the output after passing through the analog multiplier is composed of difference frequency component and sum frequency component. The frequency of the detection signal is the same as that of the excitation signal, that is, the two input signals of the analog multiplier are the same frequency, so after passing through the low-pass filter, the output signal is:
wherein the content of the first and second substances,
for the phase difference between the reference signal and the detection signal, only when the frequency of the reference signal is the same as that of the detection signal, the signal is output after passing through the low-pass filter, so that the interference of other frequency signals is eliminated, and the signal-to-noise ratio is improved.
The data acquisition system in the above scheme: 2 pieces of 4-channel differential voltage signal NI/DAQ acquisition card and LABVIEW virtual instrument are used to form a data acquisition module, 14-bit A/D conversion resolution is provided, and the sampling rate can reach 20 MS/s; the TMR sensor array picks up the change of the magnetic field signal and then enters a conditioning circuit, a Labview is used as a development platform for data acquisition, a Labview program is compiled to acquire data acquired by multiple channels in real time and transmit the data to an upper computer for data real-time acquisition, display and storage.
Specifically, the TMR multi-array deep defect flux weakening detection apparatus according to the technical solution of the present invention has a module structure as shown in fig. 1.
In order to overcome the bottleneck of in-service in-situ detection of internal cracks of a complex cavity structure in the prior art, such as ultrasonic detection, eddy current detection and the like, the technical scheme of the invention provides a TMR multi-array deep defect weak magnetic detection device which comprises a double-excitation signal generation module, a power amplifier module, a TMR array detection probe, a power supply module, a preceding stage amplification circuit, a filter circuit, a subsequent stage amplification circuit, a phase-locked amplification circuit, a data acquisition module and an upper computer.
The dual-excitation signal generation module is used for generating sine signal excitation or pulse signal excitation with adjustable frequency amplitude, and the excitation signal is amplified by the power amplifier and then applied to an excitation coil of the TMR array probe, so that eddy current is generated in a to-be-tested piece; after detecting the magnetic field change signal, the TMR sensor array enters a conditioning circuit consisting of a pre-stage amplifying circuit, a filter circuit, a post-stage amplifying circuit and a phase-locked amplifying circuit, and an acquisition module built by an NI acquisition card and LABVIEW software performs data display, acquisition and storage.
The working principle of the technical scheme is that a multi-array probe based on TMR (Tunnel magnetic Resistance sensor, Magneto-Resistance effect sensor, also called Magneto-Resistance sensor) measures the magnetic field change of a test block and judges whether defects exist, and under the action of a small external magnetic field, the magnetization direction of a ferromagnetic layer in a magnetic Tunnel junction structure of the TMR multi-array sensor changes, so that the Tunnel Resistance of the TMR multi-array sensor is greatly changed. The resistance of the material is relatively changed under the action of the magnetic field,
wherein MR is the magnetoresistance effect value, R (H) is the resistance value of the material under the action of an external magnetic field, and R (0) is the resistance value of the material under the action of a zero external field.
The TMR multi-array group adopts TMR2901 produced by multidimensional technology and technology limited company and adopts a DFN8 packaging form, and the external dimension of a single TMR2901 is 3mm multiplied by 0.75 mm. TMR2901 adopts a unique push-pull wheatstone full-bridge design, and its output signal can be expressed as:
wherein, DeltaV is TMR differential signal output value, E is external voltage value, R1，R2，R3，R4Is the resistance value of 4 resistors on the bridge arm,. DELTA.R1、△R2、△R3、△R4The change value of the resistance on the bridge arm.
The TMR multi-array detection probe excitation coil designed by the invention is a differential double-coil structure which is symmetrically arranged, the two excitation coils have the same structure size, the same number of turns and other parameters, and the coils are connected in series to an excitation circuit; the TMR multi-array is a measuring element and is formed by linearly arranging 8 TMR sensors, the sensitivity of the TMR multi-array is 25mV/V/Oe, the working voltage is 5V, and the magnetic induction intensity on the surface of the test piece is measured in real time.
As mentioned above, the power amplifier circuit is shown in FIG. 2, a TDA7294 chip is selected, a low-noise and low-distortion bipolar transistor circuit is adopted at the front stage, a high-voltage-withstanding and high-current DMOS tube is adopted at the final stage for buffer output, the wide power supply voltage input range is +/-10V to +/-40V, the frequency response is 20Hz-20kHz, the experimental requirement is met, the output power can reach 100W, the direct-current interference is filtered by adopting an input coupling capacitor, and the self-excitation is eliminated by using the phase compensation of a resistor and a capacitor.
The printed circuit diagram 3 of the multi-array circuit board of 8 TMR is shown, for avoiding missing and examining and disturbing, 8 TMR chip arrays are arranged in a word line and are embedded and welded on the double-deck printed PCB board of rectangle, both minimum safe distances are 0.3mm, 8 passageways on the PCB board are respectively connected with the electric capacity in parallel and guarantee the circuit safety, the sensitive axle direction of sensor is the pin direction, the pin of the upper and lower side of sensor can not be to lifting from highly producing the influence, the printed circuit board of design, need to eliminate the influence to height (thickness) that the pin welding brought.
The multi-channel data acquisition operation interface is shown in FIG. 4, a Labview is used as a development platform compiling program to build a data acquisition operation interface, 2 4-channel NI9775 type data acquisition cards are adopted, the 14-bit A/D conversion resolution is adopted, the input signal range is +/-10V, and the sampling rate can reach 20 MS/s.
As mentioned above, the TMR multi-array weak magnetic detection device designed by the invention is used for detecting the deep layer defect 5 (the depth is 3mm from the surface, and the defect size is 3mm multiplied by 0.2mm multiplied by 2mm) and the defect 2 (the depth is 4mm from the surface, and the defect size is 6mm multiplied by 0.2mm multiplied by 1 mm;), a sinusoidal excitation signal with the frequency of 10kHz is adopted, and a probe scans the 2 and 5 defects along the length direction of the defect in sequence, and the detection result is shown in figure 5.
As can be seen from FIG. 5, with the increase of the depth of the defect, the output voltage peaks of the two defects are obvious and can approximately reflect the relative position relationship, and the experimental result shows that the weak magnetic detection device can effectively identify 10 caused by the defect under 4mm-6T induces a change in the magnetic field.
Example (b):
the deep groove type defect of the TC4 plate test piece is taken as a research object, and the deep defect weak magnetic detection device of the TMR multi-array is used for detecting the deep defect.
The sizes of detected defects of 6 groove types processed on the same horizontal line direction of the test piece are respectively as follows: the depth of the defect 1 from the surface is 3mm, and the defect size (length × width × height) is 6mm × 0.2mm × 2 mm; the depth of the defect 2 from the surface is 4mm, and the defect size is 6mm multiplied by 0.2mm multiplied by 1 mm; the depth of the defect 3 from the surface is 3mm, and the defect size is 6mm multiplied by 0.4mm multiplied by 2 mm; the depth of the defect 4 from the surface is 4mm, and the size of the defect is 6mm multiplied by 0.4mm multiplied by 1 mm; the depth of the defect 5 from the surface is 3mm, and the defect size is 3mm multiplied by 0.2mm multiplied by 2 mm; the depth of the defect 6 from the surface was 3mm, and the defect size was 12mm × 0.2mm × 2 mm.
In the experiment, a sinusoidal excitation signal with the excitation frequency of 10kHz is adopted, and the probes sequentially scan No. 1-6 defects along the length direction of the defects.
The specific experimental steps are as follows:
A. correctly connecting a weak magnetic detection device, an upper computer (computer for short) and a TMR multi-array (probe for short) according to a test schematic diagram, and zeroing the equipment;
B. opening corresponding data acquisition software, setting instrument detection parameters, debugging and setting the working state and sensitivity of each channel of the TMR multi-array by using an oscilloscope, wherein the related set parameters cannot be changed during detection;
C. operating LABVIEW software to set acquisition parameters (sampling rate, sampling point number and the like) and preparing data acquisition;
D. controlling a probe to scan the surface of a piece to be tested stably, and acquiring signals, recording data and storing the data in the scanning process of the probe;
E. adjusting the position or scanning direction of the probe, and repeating the previous step;
F. running MATLAB software to check and analyze experimental data, judging the defect signals, recording the defect signals and rechecking;
G. recording a defect phase, a defect amplitude and a defect position according to the written defect serial number;
H. finishing the test piece defect measurement, and sorting the experimental equipment;
I. and (4) collating the experimental data, and analyzing and processing the obtained data.
The experimental results are as follows:
by adopting the technical scheme of the invention, the defects of the TC4 plate test piece below 3mm and 4mm deep layer can be better detected, the detection results of the TMR multi-array weak magnetic detection device designed by the invention on the defects 1-6 of the titanium alloy deep layer are shown in figure 6, and the magnetic induction intensity B of the defects with different lengths can be obtainedzThe result of the component distribution directly reflects the length change of the defect, and compared with the results of the No. 1 and No. 3 defect experiments, the influence of the change of the amplitude of the voltage signal on the change of the width of the defect is small, and when the width of the defect is increased from 0.2mm to 0.4mm, the change of the amplitude is increased by about 8 percent; compared with the defect experiment results of No. 1 and No. 2, the influence of the change of the amplitude of the voltage signal on the change of the depth of the defect is large, and the experiment shows that the probe can effectively detect the tiny defect of the TC4 material under the deep layer of 4 mm.
In the above embodiment, the weak magnetic detection device according to the technical solution of the present invention is used to detect 6 defects, and the signal amplitude variation data caused by the defects and the magnetic induction B on the surface of the test piece obtained by the inverse calculation thereofzThe components are shown in the table below.
TABLE 1
Compared with the experimental results of the defects of No. 1, No. 5 and No. 6, the change of the amplitude of the output voltage signal is greatly influenced by the change of the length of the defect, when the length of the defect is increased from 3mm to 6mm, the change of the amplitude of the voltage signal caused by the defect is increased by about 3 times, and when the length of the defect is increased from 6mm to 12mm, the change of the amplitude of the signal caused by the defect is increased by about 30 percent. Comparing the experimental results of the defects No. 1 and No. 3, it can be known that the amplitude change of the voltage signal is less influenced by the change of the defect width, and when the defect width is increased from 0.2mm to 0.4mm, the amplitude change is increased by about 8%. Compared with the defect experiment results of No. 1 and No. 2, the influence of the change of the amplitude of the voltage signal on the change of the depth of the defect is large, and the experiment shows that the probe can effectively detect the tiny defect of the TC4 material under the deep layer of 4 mm.
The experimental result shows that the technical scheme of the invention meets the measurement requirement of deep defects, overcomes the bottleneck that the conventional coil probe cannot detect the subsurface defects, effectively eliminates the interference of other frequency signals by the adopted phase-locked amplifier, improves the signal-to-noise ratio, greatly improves the detection depth and sensitivity, and successfully detects 10-6T weak magnetic induction intensity change.
According to the technical scheme, the TM multi-array sensor is adopted to replace a conventional coil probe to detect the deep defects of the metal component, the bottleneck that the conventional eddy current coil probe cannot detect the deep defects is broken through, and the surface, subsurface and deep defect detection of various metal material components can be realized. The technical scheme greatly improves the detection depth and sensitivity, and has the advantages of simple structure, convenient operation, stable performance and high measurement precision.
The technical scheme of the invention can be widely applied to the field of deep defect detection of metal components.
Claims (9)
1. A TMR multi-array deep defect weak magnetic detection device is characterized in that:
the deep defect weak magnetic detection device consists of a double-excitation signal generation module, a power amplifier module, a TMR array detection probe, a power supply module, a preceding stage amplification circuit, a filter circuit, a subsequent stage amplification circuit, a phase-locked amplification circuit, a data acquisition module and an upper computer;
the double-excitation signal generation module is used for outputting two-channel sinusoidal signals or pulse signals; sinusoidal signals or pulse signals of the two channels are amplified by the power amplifier module and then transmitted to differential double excitation coils symmetrically arranged in the TMR array detection probe, so that eddy current is generated in a piece to be tested;
the output end of the double-excitation signal generation module is also connected with the input end of the phase-locked amplifying circuit, and the output signal of the double-excitation signal generation module is used as a reference signal of the phase-locked amplifying circuit;
the TMR array detection probe is used for detecting a magnetic field change signal of a piece to be detected and outputting a detection signal;
the power supply module provides working voltage for the TMR array detection probe;
the front-stage amplifying circuit, the filter circuit and the rear-stage amplifying circuit are used for respectively carrying out primary amplification, filtering and secondary amplification on an output signal of each TMR sensor in the TMR array detection probe;
the TMR array detection probe is provided with an array detection element consisting of 8 TMR sensors between two exciting coils, and the 8 TMR sensors are arranged and welded on a PCB in a line; respectively connecting a capacitor in parallel on 8 channels corresponding to the 8 TMR sensors on the PCB to eliminate mutual inductance caused by too close distance of the coil probe;
the TMR sensor array detection element in the TMR array detection probe collects an induction magnetic field distortion information signal at a deep defect of a detected metal material component, then carries out signal processing through a corresponding pre-stage amplifying circuit, a filter circuit, a post-stage amplifying circuit and a phase-locked amplifying circuit, transmits a detection signal to an upper computer through a data acquisition module, displays a weak magnetic field distortion image of the defect on the upper computer, realizes weak magnetic detection of the defect, and realizes detection of the surface, the subsurface and the deep defect of the metal material component.
2. The TMR multi-array deep defect weak magnetic sensing device as claimed in claim 1, wherein the two channel dual excitation sinusoidal signals or pulse signals outputted from said dual excitation signal generating module are independent and mutually incoherent;
the differential double-coil structure comprises a plurality of excitation coils, wherein the excitation coils are symmetrically arranged, the structure, size and turn number parameters of the two excitation coils are the same, and the differential double-coil structure is connected in series with an excitation circuit to realize the magnetic field combination offset at the TMR sensor, so that the relative change rate of a weak magnetic field at the defect position is improved, and the defect detection sensitivity is improved.
3. The TMR multi-array deep defect flux weakening detection apparatus as claimed in claim 1, wherein said power supply module comprises a power supply module having an output of 5V;
the amplification factor of the front-stage amplification circuit and the amplification factor of the rear-stage amplification circuit are adjustable within the range of 1-100.
4. The TMR multi-array deep defect weak magnetic sensing device as claimed in claim 1, wherein 8 circuits of the pre-stage amplifier circuit, the filter circuit and the post-stage amplifier circuit are provided for 8 TMR sensors, respectively, the 8 circuits of the amplifier circuits realize synchronous adjustment and satisfy the operating range of the lock-in amplifier.
5. The TMR multi-array deep defect weak magnetic sensing device as claimed in claim 1, wherein said phase lock amplifying circuit is composed of an analog multiplier and a low pass filter, the analog multiplier simultaneously inputs the sensing signal e1And a reference signal e2After two input signals are operated and processed by an analog multiplier, a difference frequency component and a sum frequency component are output;
for the phase-locked amplifying circuit, when the frequency of the reference signal is the same as that of the detection signal, the signal is output to eliminate the interference of other frequency signals and improve the signal-to-noise ratio;
the low-pass filter is a second-order active low-pass filter circuit.
6. The TMR multi-array deep defect weak magnetic sensing device as claimed in claim 1, wherein for said filter circuit, when TMR output signal frequency is 50Hz-1MHz, the cut-off frequency of said second order high pass filter is 50 to 75 Hz; when the TMR output signal frequency is below 50Hz, the cut-off frequency of the second-order low-pass filter is 35-50 Hz.
7. The TMR multi-array deep defect weak magnetic sensing device as claimed in claim 1, wherein a pair of capacitors is connected in parallel to the power supply terminal of each operational amplifier in said phase-locked amplifier circuit to reduce power supply interference; the cut-off frequency of the low-pass filter of the phase-locked amplifying circuit is 20 Hz.
8. The TMR multi-array deep defect weak magnetic detection device as claimed in claim 1, wherein the data acquisition module adopts 2-4-channel differential voltage signal NI acquisition card, realizes TMR output signal acquisition by Labview program, and transmits to I/O terminal of upper computer in real time for data display, acquisition and storage.
9. The TMR multi-array deep defect flux weakening detection apparatus as claimed in claim 1, wherein said induced magnetic field distortion information includes at least a leakage flux.
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