CN113203476B - Narrowband mid-infrared heat radiation source and preparation method thereof - Google Patents
Narrowband mid-infrared heat radiation source and preparation method thereof Download PDFInfo
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- 230000005855 radiation Effects 0.000 title claims abstract description 53
- 238000002360 preparation method Methods 0.000 title description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 39
- 229910052751 metal Inorganic materials 0.000 claims abstract description 36
- 239000002184 metal Substances 0.000 claims abstract description 36
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 20
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 13
- 239000010949 copper Substances 0.000 claims abstract description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052802 copper Inorganic materials 0.000 claims abstract description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000001020 plasma etching Methods 0.000 claims abstract description 8
- 238000002310 reflectometry Methods 0.000 claims abstract description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 5
- 239000010410 layer Substances 0.000 claims description 22
- 230000000737 periodic effect Effects 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 13
- 239000011241 protective layer Substances 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 230000005672 electromagnetic field Effects 0.000 abstract description 4
- 238000010521 absorption reaction Methods 0.000 description 19
- 238000000862 absorption spectrum Methods 0.000 description 8
- 230000005684 electric field Effects 0.000 description 5
- 239000002131 composite material Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
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- 238000003491 array Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000004038 photonic crystal Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/10—Arrangements of light sources specially adapted for spectrometry or colorimetry
- G01J3/108—Arrangements of light sources specially adapted for spectrometry or colorimetry for measurement in the infrared range
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3504—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/06—Illumination; Optics
- G01N2201/061—Sources
Abstract
The invention discloses a narrow linewidth mid-infrared heat radiation source based on a low refractive index dielectric pillar array on high-reflectivity metal. The dielectric pillar array is sequentially provided with a metal reflecting layer, an alumina layer and a two-dimensional periodically arranged dielectric pillar array from bottom to top. The structure can support high-quality factor lattice resonance, and an electromagnetic field of a resonance mode is limited to the top of the dielectric pillar array. For mid-infrared wavelengths of about 4 μm, the array of dielectric pillars may be made of silicon dioxide, by plasma enhanced chemical vapor deposition methods, and reactive ion etching methods, and the metal may be copper. According to kirchhoff's law of radiation, a current is applied to the metallic reflective layer of the structure to heat the metallic reflective layer to achieve a narrowband mid-infrared thermal radiation source of surface radiation.
Description
Technical Field
The invention relates to a narrowband mid-infrared heat radiation source, in particular to a narrowband mid-infrared heat radiation source based on a two-dimensional periodic array of low-refractive-index dielectric pillars on high-reflectivity metal.
Background
Molecular sensing plays a key role in a variety of applications such as biology, chemical industry, environmental safety, and the like. Many biochemical molecular detection schemes are available, and optical spectroscopy is common to gases with infrared characteristic absorption bands and has advantages over other techniques. For ambient gas sensors with molecular absorption properties in the mid-infrared spectral region, high resolution and high sensitivity are required by a narrow-band infrared radiation source.
Research on infrared narrowband heat radiation sources in design is mainly focused on plasmon structures, including gratings or photonic crystals, and metamaterials (a dielectric layer is arranged between the two) composed of metal patch arrays on a metal plane. Although the design is compact, the electromagnetic field is limited to the vicinity of the metal, which has absorption losses over a wide spectral range, so that the quality factor of the radiation peak achieved by the metal structure is usually only a few tens at the highest. In contrast, high refractive index dielectric photonic crystals can produce thermal radiation peaks with quality factors greater than 100.
Disclosure of Invention
1. Object of the invention
In order to solve the restriction problems such as absorption loss of the metal structure, the invention discloses a narrow-band mid-infrared heat radiation source based on a low-refractive-index dielectric pillar array on a metal film
2. The invention adopts the technical proposal that
The invention discloses a narrowband mid-infrared heat radiation source which comprises a dielectric pillar array on a high-reflectivity metal reflecting layer film, wherein the dielectric pillar array is arranged on an alumina layer at equal intervals, a metal reflecting layer is arranged below the alumina layer, the dielectric pillar array is silicon dioxide, and a substrate is heated to obtain heat radiation with a narrow line width based on kirchhoff radiation law and surface plasma resonance principle.
Further, the dielectric pillars have an aspect ratio greater than 1.
Further, copper or aluminum is used for the metal reflective layer.
Further, the thickness of the metal reflecting layer is 100nm or more, and the thickness of the aluminum oxide protective layer is 10nm to 100nm.
Further, the emissivity is ε (ω) =1- |R (ω) | 2 R is the reflection of the array structure.
Furthermore, the generation of high quality factor resonance is related to lattice resonance, and its wavelength is related to lattice spacing a 0 The variation of (i.e., period) changes, and the tunable narrowband thermal radiation source is realized by changing the lattice spacing and the size of the dielectric pillars in equal proportion.
Further, at the wavelength of>Lattice spacing a 0 And less than 1.05a 0 Narrowband radiation is arranged at the radiation, and the quality factor of the radiation is more than or equal to 100. Further, the mode light field corresponding to the narrow-band radiation is localized at the top end of the dielectric pillars and in the blank area between the dielectric pillars.
The invention discloses a preparation method of a narrow-band mid-infrared heat radiation source, which is characterized in that for mid-infrared wavelength of about 3-6 mu m, a medium column array adopts silicon dioxide, a silicon dioxide film is deposited by a plasma enhanced chemical vapor deposition method, and then a two-dimensional periodic column array is obtained by reactive ion etching.
Still further, the method comprises the steps of:
and 3, transferring the mask pattern to the silicon dioxide film by utilizing a reactive ion etching method to form a two-dimensional periodic column array.
3. The invention has the beneficial effects that
(1) According to the invention, a high-aspect ratio dielectric column array is constructed on a planar metal substrate, a local electromagnetic mode is formed on the upper surface of a dielectric column, free carrier absorption in metal is regulated and controlled, and extremely narrow absorption enhancement is realized.
(2) In the aspect of the structure of the medium column, the quality factor of the structure is adjusted by adjusting the transverse morphology, the size and the height of the medium column. The unidirectional narrow linewidth heat radiation source can be realized, the divergence angle is less than 2 degrees, and the quality factor is more than or equal to 100.
(4) The low refractive index medium of the present invention may be silica for mid-infrared wavelengths of about 4 μm, obtainable by plasma enhanced chemical vapor deposition.
(5) The metal substrate is also used as a heating element, and according to kirchhoff's law, heat radiation with narrow line width can be obtained after heating.
(6) The heat radiation source provided by the invention is a composite system consisting of high-reflectivity metal and low-refractive-index dielectric pillar arrays, and can provide high-quality factor lattice resonance, and the mode electromagnetic field is strongly localized at the top of the dielectric structure. The dispersive nature of the periodic structure may cause radiation to be directional, with enhancement occurring only at band edge locations corresponding to the normal direction of the surface, and thus thermal radiation normal to the device surface will be produced.
Drawings
Fig. 1 is a three-dimensional perspective view in embodiment 1 of the present invention.
FIG. 2 shows the absorption spectrum of a metal dielectric composite structure calculated by electromagnetic simulation software in example 1 of the present invention, mode 1 having an extremely narrow resonance line width (a 0 ＝4μm,d＝1.5μm,h＝2.9μm,h Al2O3 ＝100nm,h Cu ＝1μm)。
FIG. 3 is a comparison of the absorption spectrum of the trapezoid pillar array obtained by increasing the width of the bottom of the dielectric pillar in example 2 of the present invention with the absorption spectrum in example 1.
FIG. 4 is a graph of the change in the imaginary part of the refractive index of silica (n=1.4-jn) in example 2 of the present invention i ) Causing the evolution of the trapezoidal pillar structural mode 1. The dashed line in the right plot is an exponential fit to the data points.
Fig. 5 is a graph showing the complete absorption spectrum at lattice resonance at normal incidence by adjusting the size of the dielectric column in consideration of the absorption loss of the dielectric column in example 3 of the present invention.
Fig. 6 is an electric field distribution of lattice resonances of the marking of fig. 6 in a cross section parallel to the incident electric field in embodiment 3 of the invention.
The main reference numerals in the present invention are as follows: 1-silicon dioxide, 2-aluminum oxide, 3-copper substrate.
Detailed Description
The following description of the embodiments of the present invention will be made more apparent and fully by reference to the accompanying drawings, in which embodiments of the invention are shown, and in which it is evident that the embodiments shown are only some, but not all embodiments of the invention. All other embodiments, which can be made by a person skilled in the art without any inventive effort, are intended to be within the scope of the present invention.
Examples of the present invention will be described in further detail below with reference to the accompanying drawings.
The three-dimensional view of the narrow-band mid-infrared heat radiation source is shown in fig. 1, and the narrow-band mid-infrared heat radiation source with a metal medium composite structure is respectively provided with a copper substrate, an aluminum oxide film and a silicon dioxide medium square column array from bottom to top. The silicon dioxide dielectric column array is arranged in a square shape and is clung to the surface of aluminum oxide, and the aluminum oxide is used as a protective layer to protect copper from being oxidized. The copper substrate is used as a plane reflecting mirror, has excellent surface plasma characteristics in mid-infrared, and simultaneously is also used as a heating element, and the substrate is heated according to kirchhoff's law to obtain heat radiation with narrow linewidth.
The invention arranges a low-refractive-index high-depth-ratio dielectric pillar array on a planar metal copper substrate, electromagnetic waves can excite local surface plasma resonance at the interface between metal and a dielectric, the resonance can generate obvious local field enhancement at the interface, the generated local field enhancement is transferred to the surface of the dielectric and is far away from the metal through specular reflection, thereby greatly reducing the influence of free carrier absorption in the metal, forming a local surface electromagnetic field above the dielectric pillar, and realizing the absorption enhancement of narrow linewidth through diffraction coupling.
The heat radiation characteristics of this structure can be determined by the kirschner Huo Fure radiation law, which states that each object radiates and absorbs heat radiation in a heat balance state, and that the emissivity and absorptivity of the object are equal, i.e., the greater the radiation capacity of the object, the greater the absorptivity. In other words, the emissivity formula may be expressed as ε (ω) =1- |T (ω) | 2 -|R(ω)| 2 Where T and R are the spectral transmission and reflection of the entire structure. Since the structure in fig. 1 is supported by a thick metal substrate, the emissivity is only comprised of ε (ω) =1- |R (ω) | 2 Given as |t|=0. Thus, to achieve a narrow band of thermal radiation, the structure should absorb all incident light.
Example 1
As shown in FIG. 2, the array structure of the square dielectric pillars above the metal film (i.e. FIG. 1) is shown as a 0 Calculated absorbance spectra at normal incidence at=4 μm, d=1.5 μm, h=2.9 μm. The absorptivity is given by a (λ) =1-R (λ), where R (λ) is the reflectivity of the periodic array, due to the barrier of the copper film. The periodic array exhibits a perfect absorption spectrum in a very narrow band of wavelengths with peak wavelengths close to the lattice spacing a 0 Labeled mode 1. Fitting resonance to
ω 0 Angular frequency of resonance, Q r And Q nr For the radiation quality factor and the non-radiation quality factor of the resonance, mode 1 almost reaches the critical coupling condition (Q r ＝Q nr ) The total quality factor Q=1/(1/Q) r +1/Q nr ) And 6000. The generation of quality factor resonance (mode 1) is related to lattice resonance, the wavelength of which is a function of lattice spacing a 0 By changing the lattice spacing and the size of the dielectric pillars in equal proportion, a tunable narrowband heat radiation source can be realized.
Example 2
The invention expands the width of the bottom of the dielectric column and constructs a trapezoid column array so as to find more possibilities. The absorption spectrum at normal incidence is shown in fig. 3 when the column bottom width is d' =2.9 μm (column top width and column top height are unchanged). Mode 1 now has a slight red shift and the lattice resonance still exhibits a perfect absorption spectrum, at which time the quality factor may exceed 3000.
Considering that the dielectric pillars actually fabricated have surface roughness (cause radiation loss), and that the deposited dielectric material may also have absorption loss, the present invention next investigated mode 1 of the trapezoidal pillar structure in fig. 3 in terms of its refractive index (n=1.4-jn i ) With an evolution of the change in the imaginary part. When n is i At=0, the structure exhibits a perfect absorption peak, with Q greater than 3000. As shown in FIG. 4, when n i When the absorption peak is increased, the spectrum is widened along with the decrease of the absorption peak, and Q is increased along with the loss tangent (epsilon) i /ε r ) And decreases exponentially as the increase in (c). Notably, even n i The value is large, and the quality factor Q can still reach hundreds.
Example 3
When the dielectric material is formed to have actual absorption loss, 100% of the absorption peak can be recovered by adjusting the shape of the dielectric column. As shown in fig. 4, for a fixed trapezoid pillar shape, when the refractive index n i The peak absorption decreases as the imaginary part of (2) increases, mainly due to Q r And Q nr Mismatch between them. n is n i An increase in (1) results in Q nr Rapidly decreasing. To and reduce Q nr In a match, the present invention can reduce Qr by increasing the bottom width of the pillar (while maintaining other parameters the same as in fig. 3).
As shown in FIG. 5, case (i) is compared with case (ii) for n i When the bottom width d=3.2 μm, =0.001, 100% absorption of q=1010 can be recovered; for n i When=0.003, the bottom width d=3.6 μm, the 100% absorption of q=330 can be recovered. From this, it can be seen that n i Further increases within a limited range can be compensated by further increasing the bottom width at the cost of reduced Q and field enhancement. More complex designs can maintain Q by adjusting the shape of the entire column r ＝Q nr Conditional expressionTo a larger overall Q factor. For example, when n i At =0.001, for an array of trapezoidal columns with a bottom width d' =2.9 μm, a top width d=1.25 μm, and a height h=3.2 μm, a total quality factor q=1410 can be obtained, where case (iii) shows a higher complete absorption of quality factor than case (i).
Fig. 6 is an electric field distribution of lattice resonances of the tag of fig. 5 across a section parallel to the incident electric field. Obviously, the electric field strength in case (iii) is higher than in case (i), both of which are significantly higher than in case (ii).
The proposed structure can be fabricated by film deposition followed by reactive ion etching. The preparation method of the narrow-band mid-infrared heat radiation source comprises the steps of adopting silicon dioxide for a medium column array with a mid-infrared wavelength of about 3-6 mu m, depositing a silicon dioxide film by a plasma enhanced chemical vapor deposition method, and obtaining a two-dimensional periodic column array by reactive ion etching.
The method comprises the following steps:
and 3, transferring the mask pattern to the silicon dioxide film by utilizing a reactive ion etching method to form a two-dimensional periodic column array.
The foregoing is only a preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions easily contemplated by those skilled in the art within the scope of the present invention should be included in the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the claims.
Claims (7)
1. A narrowband unidirectional mid-infrared heat radiation source, characterized by: the device comprises a dielectric column array on a high-reflectivity metal reflecting layer film, wherein the dielectric column array is arranged on an alumina layer at equal intervals, the metal reflecting layer is arranged below the alumina layer, the dielectric column array is silicon dioxide, and a substrate is heated based on kirchhoff radiation law and surface lattice resonance principle to obtain narrow-linewidth unidirectional thermal radiation;
the aspect ratio of the dielectric column is greater than 1;
at the wavelength of>Lattice spacinga 0 And less than 1.05a 0 Narrowband radiation is arranged at the radiation, and the quality factor of the radiation is more than or equal to 100.
2. A narrowband unidirectional mid-infrared heat radiation source as defined in claim 1, wherein: the generation of quality factor resonance is related to lattice resonance, and its wavelength is related to lattice spacing a 0 By changing lattice spacing and dielectric pillar size in equal proportion.
3. A narrowband unidirectional mid-infrared heat radiation source as defined in claim 1, wherein: the metal reflecting layer adopts copper or aluminum.
4. A narrowband unidirectional mid-infrared heat radiation source as defined in claim 1, wherein: the thickness of the metal reflecting layer is more than or equal to 100nm, and the thickness of the aluminum oxide protective layer is 10nm to 100nm.
5. A narrowband unidirectional mid-infrared heat radiation source as defined in claim 1, wherein: the mode light field corresponding to the narrow-band radiation is localized at the top end of the dielectric pillars and in the blank area between the dielectric pillars.
6. A method for preparing a narrowband unidirectional mid-infrared heat radiation source as claimed in any one of claims 1-5, wherein: for the mid-infrared wavelength of 3-6 mu m, the medium column array adopts silicon dioxide, a silicon dioxide film is deposited by a plasma enhanced chemical vapor deposition method, and then the two-dimensional periodic column array is obtained by reactive ion etching.
7. The method for preparing a narrowband unidirectional mid-infrared heat radiation source as claimed in claim 6, comprising the steps of:
step 1, depositing a metal reflecting layer on a flat substrate, wherein the metal reflecting layer comprises an adhesion layer, an alumina protective layer and a silicon dioxide film;
step 2, carrying out nano-imprinting on the multilayer film to define a mask of a two-dimensional periodic array;
and 3, transferring the mask pattern to the silicon dioxide film by utilizing a reactive ion etching method to form a two-dimensional periodic column array.
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