CN113201710A - Mask plate, preparation and application thereof - Google Patents
Mask plate, preparation and application thereof Download PDFInfo
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- CN113201710A CN113201710A CN202110453539.2A CN202110453539A CN113201710A CN 113201710 A CN113201710 A CN 113201710A CN 202110453539 A CN202110453539 A CN 202110453539A CN 113201710 A CN113201710 A CN 113201710A
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- mask
- mask layer
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- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 239000000463 material Substances 0.000 claims abstract description 39
- 238000000034 method Methods 0.000 claims description 15
- 230000008020 evaporation Effects 0.000 claims description 13
- 238000001704 evaporation Methods 0.000 claims description 13
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 238000001020 plasma etching Methods 0.000 claims description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 238000003877 atomic layer epitaxy Methods 0.000 claims description 3
- 238000000206 photolithography Methods 0.000 claims description 3
- 238000002294 plasma sputter deposition Methods 0.000 claims 1
- 230000008021 deposition Effects 0.000 abstract description 17
- 238000000059 patterning Methods 0.000 abstract description 16
- 230000005484 gravity Effects 0.000 abstract description 12
- 230000000694 effects Effects 0.000 abstract description 9
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 abstract description 3
- 238000000151 deposition Methods 0.000 description 20
- 238000010586 diagram Methods 0.000 description 4
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention relates to a mask plate, preparation and application thereof, wherein the mask plate comprises at least two layers: a first mask layer and a second mask layer; the first mask layer contains a first material with residual tensile stress; the second mask layer contains a second material with residual compressive stress; the first mask layer and the second mask layer both retain the characteristic of residual stress when the first mask layer and the second mask layer are formed on the rigid substrate; when the mask plate releases the residual stress in the mask plate, the second mask layer expands transversely, the first mask layer contracts transversely, and the mask plate reaches the lowest strain energy state under the combined action of the residual stress. The beneficial effects are that: the structure of the invention causes the stress zero position surface of the mask plate to deviate from the middle position of the structure, thereby generating the moment vertical to the surface of the mask plate. When the mask is applied, the influence of gravity on the mask plate structure is compensated due to the stress effect, so that the influence of a shadow effect is reduced, the patterning precision of material deposition is improved, and a high-resolution direct patterning technology becomes possible.
Description
Technical Field
The invention relates to the technical field of material mask patterning deposition, in particular to a mask plate, preparation and application thereof.
Background
In semiconductor manufacturing, a common method of patterning a layer of material is to deposit a layer of material over the entire surface of a substrate and then remove the deposited material in areas other than the desired pattern. A photoresist mask is typically formed on the material layer using exposure to light, and the exposed material is removed with an etchant to obtain the desired pattern. The photoresist mask is then removed, the substrate is cleaned, and the residues are etched. In this process, all materials on the substrate are exposed to chemical solvents, which may damage many organic materials, and thus the organic material patterning should employ a direct patterning technique.
Direct patterning techniques are techniques that directly form the desired pattern at the time of material deposition, thereby avoiding post-deposition processing exposure to other chemicals. Mask deposition is a common direct patterning solution.
During mask deposition, vapor molecules of the material flow from the evaporation source to the substrate surface. A layer of open structure material (mask) with the desired pattern is located directly in front of the substrate. When the material vapor molecules reach the mask plate, the parts except the opening structure part of the mask plate can pass through, and other parts are blocked, so that the material can be directly patterned when being deposited on the substrate, and additional post-deposition treatment is not needed.
Theoretically, during mask deposition, material is only deposited on the substrate surface directly behind the mask opening. However, in practice, when vapor molecules travel from the evaporation source to the mask, many vapor molecules move in a direction not completely perpendicular to the mask and the substrate, resulting in a pattern region formed after passing through the mask extending beyond a desired region, which is called a "shadow effect". In the preparation process of the OLED micro display device with high resolution, the shadow effect influences the performance of the device, and further becomes a limiting factor for improving the resolution of the OLED micro display device.
In the fabrication of high resolution OLED micro display devices, the mask plate is large and thin in size. At this time, the distance between the mask and the substrate may vary due to the deformation of the mask caused by gravity, as shown in fig. 4. This, in turn, can lead to increased shadowing near the deformed region of the mask, thereby causing variation across the patterned deposition area, affecting device performance.
In order to reduce the influence of gravity deformation of the mask caused by gravity in the prior art, a support structure is placed under the mask, or a support part is provided in the patterning process. However, these methods all have the effect of poor uniformity in the deposition of material on the substrate.
Disclosure of Invention
The invention provides a mask plate, preparation and application thereof, and aims to solve the problem of gravity deformation of the mask plate in the prior art.
The invention achieves the aim of reducing the deformation of the mask plate caused by the self weight by adjusting the action direction of the residual stress to be opposite to the gravity direction.
The technical problem solved by the invention is realized by adopting the following technical scheme:
a mask, comprising at least two layers: a first mask layer and a second mask layer;
the first mask layer contains a first material with residual tensile stress; the second mask layer contains a second material with residual compressive stress;
the first mask layer and the second mask layer both retain the characteristic of residual stress when the first mask layer and the second mask layer are formed on the rigid substrate; when the mask plate releases the residual stress in the mask plate, the second mask layer expands transversely, the first mask layer contracts transversely, and the mask plate reaches the lowest strain energy state under the combined action of the residual stress.
In some embodiments, the first material is silicon nitride and the second material is silicon dioxide.
In some embodiments, the first mask layer has a thickness of 50nm and a residual tensile stress of 1 GPa.
In some embodiments, the second mask layer has a thickness of 1 micron and a compressive residual stress of 400 MPa.
The invention also provides a preparation method of the mask plate, which comprises the following steps:
a substrate, the substrate providing a rigid feature;
forming a mask plate on the substrate;
the mask plate comprises at least two layers: a first mask layer and a second mask layer;
the first mask layer contains a first material with residual tensile stress; the second mask layer contains a second material with residual compressive stress;
the first mask layer and the second mask layer both retain the characteristic of residual stress when the first mask layer and the second mask layer are formed on the rigid substrate; when the mask plate releases the residual stress in the mask plate, the second mask layer expands transversely, the first mask layer contracts transversely, and the combined action of the residual stress and the mask plate reaches the lowest strain energy state;
at least one opening is formed on the mask plate; the openings penetrate through the mask plate, and required patterns are formed in the openings;
and removing the substrate after the mask plate is formed.
In some embodiments, the method for forming the mask plate includes: low Pressure Chemical Vapor Deposition (LPCVD), atomic layer epitaxy, Plasma Enhanced Chemical Vapor Deposition (PECVD), or sputtering.
In some embodiments, the method of removing the substrate is: photolithography and reactive ion etching.
The mask plate is used for evaporation.
The invention has the beneficial effects that:
the mask plate has at least two layers of structures, and the structure enables the stress zero position surface of the mask plate to deviate from the middle position of the structure, so that a moment vertical to the surface of the mask plate is generated. When the mask plate with at least two layers of structures is horizontally placed in the deposition equipment for processing, the influence of gravity on the mask plate structure is compensated due to the stress action, so that the influence of shadow effect is reduced, the patterning precision of material deposition is improved, and a high-resolution direct patterning technology is possible.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without inventive exercise.
FIG. 1 is a drawing of the present invention: a state schematic diagram of the mask plate formed in actual use;
FIG. 2 is a drawing of the present invention: the schematic diagram of the 'bulge' of the mask plate under the action of stress torque;
FIG. 3 is a drawing of the present invention: a schematic diagram of a mask plate for evaporation;
fig. 4 is a schematic diagram of deformation of a conventional mask plate under the influence of gravity moment.
Wherein: the mask comprises a mask plate 1, an annular support frame 2, a first mask layer 10, a second mask layer 20, an evaporation source 3, a mask plate clamp 4, a substrate clamp 5, a substrate 6, a patterning graph 7 and an opening 201.
Detailed Description
In order to make the technical means, the creation characteristics, the achievement purposes and the effects of the invention easy to understand, the invention is further explained below by combining the specific drawings.
Example 1
Referring to FIGS. 1-3: a mask plate 1 is an ultra-thin multi-layer structure film with a desired deposition pattern, and is externally provided with an annular support frame 2, and the annular support frame 2 extends along the perimeter of the multi-layer structure.
The mask 1 comprises at least two layers: a first mask layer 10 and a second mask layer 20. The first mask layer 10 contains a first material of residual tensile stress, which in this embodiment is silicon nitride. The second mask layer 20 contains a second material of residual compressive stress, which in this embodiment is silicon dioxide. In addition, for directly patterning a dense pattern having a size of less than 10 micrometers, the multi-layered structure film of the mask plate 1 is very thin, preferably having a thickness of 1 micrometer or less, and in this embodiment, the first mask layer 10 is 50nm, the residual tensile stress is 1GPa, the thickness of the second mask layer 20 is 1 micrometer, and the residual compressive stress is 400 MPa. The first mask layer 10 and the second mask layer 20 both retain the characteristic of residual stress when they are formed on a rigid substrate; when the mask plate 1 releases the internal residual stress, the second mask layer 20 expands transversely, the first mask layer 10 contracts transversely, and the mask plate 1 reaches the lowest strain energy state under the combined action of the residual stress.
In this embodiment, by selecting the components, thicknesses, and residual stresses of the constituent layers of the formed structure of the mask plate 1, the stress zero-position surface of the formed mask plate 1 is moved down to the first mask layer 10, so that the mask plate 1 has a tendency of "bulging" in a direction opposite to the gravity, as shown in fig. 2, it should be noted that, at this time, the effect of the gravity is not considered in the illustration of the mask plate 1. When placed in a position horizontally parallel to the substrate, the gravity-induced sagging deformation acts with the "bulge" such that it is reduced or even balanced, and ultimately, preferably substantially eliminated, to achieve a substantially flat mask plate structure, as shown in fig. 1.
As shown in fig. 3: the mask plate 1 is used for evaporation.
The device comprises an evaporation source 3, a mask plate clamp 4, a mask plate 1, a substrate clamp 5 and a substrate 6. The evaporation source 3 is a crucible for placing evaporation material, and the evaporation material is organic material used for a light-emitting layer of the OLED micro display device. And the opening area of the crucible is significantly smaller than that of the deposition substrate, and is a point evaporation source. The substrate holder 5 is a fixing platen for fixing the substrate 6 to be as horizontally parallel as possible to the mask 1. The substrate 6 is a silicon substrate for depositing a patterning material, is positioned close to the mask plate 1, and is horizontally arranged in parallel with the mask plate; on which a patterned pattern 7 of organic light emitting material is formed. The mask plate clamp 4 is a mechanical clamp for fixing the mask plate 1 between the point evaporation source 3 and the substrate 6.
In the preparation method of the mask plate 1, a substrate with rigid characteristics needs to be found, and the required mask plate 1 is formed on the substrate. The method for forming the mask is a conventional deposition method, such as: low Pressure Chemical Vapor Deposition (LPCVD), atomic layer epitaxy, Plasma Enhanced Chemical Vapor Deposition (PECVD), or sputtering, among others. The mask 1 has at least two different residual stresses, the ratio of which is a function of the material and the deposition conditions, including substrate material, deposition temperature, deposition rate, chamber pressure, precursor gas selection, etc.
The method comprises the following specific steps:
s1: forming a silicon nitride layer 10 by Low Pressure Chemical Vapor Deposition (LPCVD) with a thickness of 50nm and a first residual tensile stress of 1 GPa;
s2: a silicon dioxide layer 20 having a thickness of 1 micrometer and a second residual compressive stress of 400MPa was formed by Low Pressure Chemical Vapor Deposition (LPCVD) using Tetraethylorthosilicate (TEOS) as a precursor gas.
S3: at least one opening 201 is opened on the mask structure, and the opening 201 forms a via hole in the mask structure by Reactive Ion Etching (RIE) on the target substrate and forms a desired pattern, as required. The substrate is removed by photolithography and reactive ion etching after the mask structure is formed, leaving only the annular support frame structure 2 along its perimeter externally.
According to the mask plate manufactured by the method, the mask structure is formed and the stress is released, and the first residual tensile stress is compensated by the second residual compressive stress part, so that the fracture stress of the mask structure is effectively reduced. So that the mask plate is not broken while maintaining the required high tension.
The invention has the beneficial effects that:
the mask plate has at least two layers of structures, and the structure enables the stress zero position surface of the mask plate to deviate from the middle position of the structure, so that a moment vertical to the surface of the mask plate is generated. When the mask plate with at least two layers of structures is horizontally placed in the deposition equipment for processing, the influence of gravity on the mask plate structure is compensated due to the stress action, so that the influence of shadow effect is reduced, the patterning precision of material deposition is improved, and a high-resolution direct patterning technology is possible.
The foregoing shows and describes the general principles and broad features of the present invention and advantages thereof. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are described in the specification and illustrated only to illustrate the principle of the present invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the present invention, which fall within the scope of the invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (8)
1. A mask plate is characterized by comprising at least two layers: a first mask layer and a second mask layer;
the first mask layer contains a first material with residual tensile stress; the second mask layer contains a second material with residual compressive stress;
the first mask layer and the second mask layer both retain the characteristic of residual stress when the first mask layer and the second mask layer are formed on the rigid substrate; when the mask plate releases the residual stress in the mask plate, the second mask layer expands transversely, the first mask layer contracts transversely, and the mask plate reaches the lowest strain energy state under the combined action of the residual stress.
2. A mask according to claim 1, wherein the first material is silicon nitride and the second material is silicon dioxide.
3. A mask according to claim 1 or 2 wherein the first mask layer has a thickness of 50nm and a residual tensile stress of 1 GPa.
4. A mask according to claim 1 or 2 wherein the second mask layer has a thickness of 1 micron and a compressive residual stress of 400 MPa.
5. A preparation method of a mask plate is characterized by comprising the following steps:
a substrate, the substrate providing a rigid feature;
forming a mask plate on the substrate;
the mask plate comprises at least two layers: a first mask layer and a second mask layer;
the first mask layer contains a first material with residual tensile stress; the second mask layer contains a second material with residual compressive stress;
the first mask layer and the second mask layer both retain the characteristic of residual stress when the first mask layer and the second mask layer are formed on the rigid substrate; when the mask plate releases the residual stress in the mask plate, the second mask layer expands transversely, the first mask layer contracts transversely, and the combined action of the residual stress and the mask plate reaches the lowest strain energy state;
at least one opening is formed on the mask plate; the openings penetrate through the mask plate, and required patterns are formed in the openings;
and removing the substrate after the mask plate is formed.
6. A method for preparing a mask according to claim 5, wherein the method for forming a mask is: low pressure chemical vapor deposition, atomic layer epitaxy, plasma enhanced chemical vapor deposition, or sputtering.
7. A preparation method of a mask according to claim 5, wherein the method for removing the substrate comprises: photolithography and reactive ion etching.
8. Use of a mask, characterized in that the mask of any of claims 1-4 is used for evaporation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110453539.2A CN113201710A (en) | 2021-04-26 | 2021-04-26 | Mask plate, preparation and application thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110453539.2A CN113201710A (en) | 2021-04-26 | 2021-04-26 | Mask plate, preparation and application thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113201710A true CN113201710A (en) | 2021-08-03 |
Family
ID=77028693
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110453539.2A Pending CN113201710A (en) | 2021-04-26 | 2021-04-26 | Mask plate, preparation and application thereof |
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| Country | Link |
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| CN (1) | CN113201710A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115896690A (en) * | 2022-11-30 | 2023-04-04 | 京东方科技集团股份有限公司 | Fine mask |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040224243A1 (en) * | 2003-05-08 | 2004-11-11 | Sony Corporation | Mask, mask blank, and methods of producing these |
| US20080157403A1 (en) * | 2006-12-27 | 2008-07-03 | Hynix Semiconductor Inc. | Semocondutor device having multiple-layer hard mask with opposite stresses and method for fabricating the same |
| US20180315962A1 (en) * | 2017-05-01 | 2018-11-01 | Emagin Corporation | Mechanically Pre-biased Shadow Mask and Method of Formation |
| CN111826608A (en) * | 2020-07-30 | 2020-10-27 | 昆山工研院新型平板显示技术中心有限公司 | Mask plate, preparation method of mask plate and evaporation device |
| CN111850466A (en) * | 2020-07-30 | 2020-10-30 | 昆山国显光电有限公司 | Mask and evaporation device |
-
2021
- 2021-04-26 CN CN202110453539.2A patent/CN113201710A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040224243A1 (en) * | 2003-05-08 | 2004-11-11 | Sony Corporation | Mask, mask blank, and methods of producing these |
| US20080157403A1 (en) * | 2006-12-27 | 2008-07-03 | Hynix Semiconductor Inc. | Semocondutor device having multiple-layer hard mask with opposite stresses and method for fabricating the same |
| US20180315962A1 (en) * | 2017-05-01 | 2018-11-01 | Emagin Corporation | Mechanically Pre-biased Shadow Mask and Method of Formation |
| CN111826608A (en) * | 2020-07-30 | 2020-10-27 | 昆山工研院新型平板显示技术中心有限公司 | Mask plate, preparation method of mask plate and evaporation device |
| CN111850466A (en) * | 2020-07-30 | 2020-10-30 | 昆山国显光电有限公司 | Mask and evaporation device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115896690A (en) * | 2022-11-30 | 2023-04-04 | 京东方科技集团股份有限公司 | Fine mask |
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