CN113201104A - Cage type polysilsesquioxane/epoxy resin nano composite material with low dielectric constant and preparation method thereof - Google Patents

Cage type polysilsesquioxane/epoxy resin nano composite material with low dielectric constant and preparation method thereof Download PDF

Info

Publication number
CN113201104A
CN113201104A CN202110692506.3A CN202110692506A CN113201104A CN 113201104 A CN113201104 A CN 113201104A CN 202110692506 A CN202110692506 A CN 202110692506A CN 113201104 A CN113201104 A CN 113201104A
Authority
CN
China
Prior art keywords
epoxy resin
cage
type polysilsesquioxane
dielectric constant
low dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN202110692506.3A
Other languages
Chinese (zh)
Other versions
CN113201104B (en
Inventor
陈玉伟
胡振东
王泉
槐凯
崔欣
魏怀笑
吴韦菲
张白浪
胡金金
车俊伯
张田砚
张建明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shang Hai Yinai New Material Technology Ltd
Original Assignee
Qingdao University of Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qingdao University of Science and Technology filed Critical Qingdao University of Science and Technology
Priority to CN202110692506.3A priority Critical patent/CN113201104B/en
Publication of CN113201104A publication Critical patent/CN113201104A/en
Application granted granted Critical
Publication of CN113201104B publication Critical patent/CN113201104B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F290/00—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups
    • C08F290/02—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups on to polymers modified by introduction of unsaturated end groups
    • C08F290/06—Polymers provided for in subclass C08G
    • C08F290/064—Polymers containing more than one epoxy group per molecule

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Epoxy Resins (AREA)
  • Organic Insulating Materials (AREA)

Abstract

本发明涉及集成电路技术领域，具体涉及低介电常数的笼型聚倍半硅氧烷/环氧树脂纳米复合材料及其制备方法。本发明所述的低介电常数的笼型聚倍半硅氧烷/环氧树脂纳米复合材料由改性环氧树脂、笼型聚倍半硅氧烷和光引发剂制备而成；所述改性环氧树脂均是开环改性后投入使用，在环氧树脂链上引入双键，双键的活性较高，可发生自由聚合，固化速度快，固化温度低，可在室温下通过光固化的方式固化成型，所以本发明制备的笼型聚倍半硅氧烷/环氧树脂纳米复合材料更适合作为芯片和电路板的粘结封装材料。

Figure 202110692506

The invention relates to the technical field of integrated circuits, in particular to a cage-type polysilsesquioxane/epoxy nanocomposite material with low dielectric constant and a preparation method thereof. The low dielectric constant cage-type polysilsesquioxane/epoxy resin nanocomposite material of the present invention is prepared from modified epoxy resin, cage-type polysilsesquioxane and photoinitiator; All epoxy resins are put into use after ring-opening modification. Double bonds are introduced into the epoxy resin chain. The double bonds have high activity and can undergo free polymerization. The curing speed is fast and the curing temperature is low. It can pass light at room temperature. Therefore, the cage-type polysilsesquioxane/epoxy nanocomposite material prepared by the present invention is more suitable as a bonding and packaging material for chips and circuit boards.

Figure 202110692506

Description

Cage type polysilsesquioxane/epoxy resin nano composite material with low dielectric constant and preparation method thereof
Technical Field
The invention relates to the technical field of integrated circuits, in particular to a packaging material and an insulating material for electronic devices, and more particularly relates to a cage type polysilsesquioxane/epoxy resin nano composite material with a low dielectric constant and a preparation method thereof.
Technical Field
The 5G communication technology enables the production and life of people to be more efficient and faster, in recent years, people can deeply feel the influence of electronic products on the life of people, and the life quality of people is greatly improved. The electronic packaging material is used as an important component of the electronic component, and can effectively protect the electronic component from being interfered by the external environment, and ensure effective transmission and stable function of signals. The advent of new generation electronic products has put higher demands on the performance of electronic packaging materials, and under such a trend, conventional packaging materials have gradually failed to meet the stringent requirements of very large scale integrated circuits, and thus it is necessary to prepare dielectric materials having excellent electrical properties by effective means.
Electronic packaging materials are required to have a low dielectric constant and high insulation properties. At present, the epoxy resin has the characteristics of excellent cohesiveness and insulativity and is widely used in the electrical and electronic industry; however, the dielectric constant of the epoxy resin material used in the electrical and electronic industry is about 4, and the low dielectric constant material used in 5G communication electronic equipment cannot be met, so it is very important to develop a low dielectric constant material that can be used in 5G communication electronic equipment.
Disclosure of Invention
In order to solve the above-mentioned conventional problems, an object of the present invention is to provide a cage type Polysilsesquioxane (POSS)/epoxy nanocomposite with a low dielectric constant and a method for preparing the same.
The invention can be realized by the following technical scheme:
a cage type polysilsesquioxane/epoxy resin nano composite material with low dielectric constant is prepared from the following raw materials: modified epoxy resin, cage type polysilsesquioxane and photoinitiator;
the addition amount of the cage type polysilsesquioxane accounts for 10-50 percent of the total amount of the cage type polysilsesquioxane and the modified epoxy resin, and is preferably 40 percent;
the addition amount of the photoinitiator accounts for 0.5-2% of the total amount of the cage type polysilsesquioxane and the modified epoxy resin, and is preferably 1%;
the modified epoxy resin is prepared from the following raw materials: epoxy resins, diluents, ring-opening agents and catalysts;
the mass ratio of the epoxy resin, the diluent, the ring-opening agent and the catalyst is (80-120): (10-50): (20-60): (0.1-1), preferably 103: 28: 48: 0.44;
further, the cage-type polysilsesquioxane is methacryloxypropyl cage-type polysilsesquioxane;
further, the epoxy resin is bisphenol a epoxy resin (more preferably E51);
further, the ring-opening agent is selected from one of primary amine, secondary amine, phenolic compound and carboxylic acid compound, and is more preferably methacrylic acid;
further, the catalyst is triphenylphosphine;
further, the diluent is hydroxyethyl methacrylate;
further, the photoinitiator is 2,4, 6-trimethylbenzoyl-diphenylphosphine oxide.
The invention also provides a preparation method of the cage type polysilsesquioxane/epoxy resin nano composite material with low dielectric constant, which comprises the following steps:
(1) modification of epoxy resin: adding epoxy resin, a ring-opening agent and a catalyst into a reaction container, and carrying out a ring-opening reaction to obtain methacrylic acid based epoxy resin; then adding a diluent to adjust the viscosity to obtain a methacrylic acid based epoxy resin mixture, namely modified epoxy resin;
(2) uniformly mixing the modified epoxy resin obtained in the step (1) and the cage-type polysilsesquioxane, and then adding a photoinitiator into the mixture to perform curing molding through ultraviolet light (preferably, after uniform mixing, firstly eliminating bubbles in a system, and then adding the photoinitiator to perform curing molding).
Further, the ring-opening reaction in the step (1) is carried out at 100-150 ℃, the reaction time is 4-12h (preferably at 120-125 ℃ for 6h), when the acid value of the system is less than 10KOH/(mg/g), the temperature is reduced to below 90 ℃, and then the diluent is added into the system.
Further, the catalyst in the step (1) is added for multiple times, and the temperature of the system is increased by 3-4 ℃ while each time of adding.
Furthermore, the preparation method of the cage type polysilsesquioxane/epoxy resin nano composite material with low dielectric constant specifically comprises the following steps:
(a) adding bisphenol A epoxy resin into a three-neck flask, heating to 80 ℃, uniformly stirring, adding methacrylic acid, heating to 110 ℃, adding a triphenylphosphine catalyst for four times, heating to 3-4 ℃ after each addition, reacting at the final reaction temperature of 120-125 ℃ for 6 hours at 120-125 ℃, cooling to 80 ℃ when the acid value of the system is less than 10KOH/(mg/g), adding 28g of hydroxyethyl methacrylate, and uniformly stirring to obtain a methacrylic acid-based epoxy resin mixture, namely the modified epoxy resin;
(b) and preparing a sample:
uniformly stirring and mixing the modified epoxy resin and the methacryloxypropyl cage-type polysilsesquioxane, adding a photoinitiator 2,4, 6-trimethylbenzoyl-diphenylphosphine oxide into the mixture, uniformly stirring the mixture, then placing the mixture into an oven at 70 ℃ to eliminate bubbles, pouring the mixture into a mold, and irradiating the mold for 2-3 min by using an ultraviolet lamp to cure and mold the resin to obtain the cage-type polysilsesquioxane/epoxy resin nano composite material with a low dielectric constant.
Compared with the prior art, the invention has the following advantages and beneficial effects:
(1) polyhedral oligomeric silsesquioxanes (polysilsesquioxanes) are hollow nanoparticles with a nano structure and a high specific surface area, POSS belongs to a nano-scale silicon dioxide/siloxane hybrid, molecules are in a cage structure, the molecular size is usually 1-3nm, an inorganic framework core is formed by Si-O, and the periphery of the inorganic framework core is surrounded by organic groups. The compound has excellent reactivity, heat resistance, flame retardance, porosity and nano-size effect. The nano particles with hollow structures are introduced into the polymer, and the good dispersion of the nano particles in the composite material is ensured, so that a nano-pore structure can be formed, and the dielectric constant of the material can be effectively reduced.
(2) The molecular chain terminal of the epoxy resin contains double bonds through modification, the molecular chains of the modified epoxy resin and the nano particle POSS both contain double bonds, the double bonds have higher activity, can be subjected to free polymerization, have high curing speed and low curing temperature, and can be cured and molded at room temperature in a photocuring mode, so that the epoxy resin nano composite material prepared by the method is more suitable for being used as a bonding and packaging material of chips and circuit boards.
Drawings
FIG. 1 is a Fourier transform infrared spectrum before and after modification of the epoxy resin in the example.
FIG. 2 is a graph of the dielectric constant of the low dielectric constant epoxy nanocomposite prepared in the examples.
FIG. 3 is a reaction mechanism diagram of the preparation of the epoxy resin nanocomposite with low dielectric constant according to the technical scheme of the present invention.
Detailed Description
The technical solution of the present invention is described in detail below with reference to examples.
The embodiment provides an epoxy resin nano composite material with low dielectric constant, which is prepared by the following method:
(1) preparing raw materials:
bisphenol a epoxy resin E51103g, specifically south asian epoxy 128 resin;
50g of nano particles; the nano-particles are methacryloxypropyl polyhedral oligomeric silsesquioxane (POSS);
48g of ring-opening agent, wherein the ring-opening agent is methacrylic acid;
0.44g of catalyst, namely triphenylphosphine;
28g of diluent, wherein the diluent is hydroxyethyl methacrylate;
and the photoinitiator is 2,4, 6-trimethylbenzoyl-diphenyl phosphine oxide.
(2) Modification of epoxy resins
Adding 103g of bisphenol A epoxy resin into a three-neck flask, heating to 80 ℃, stirring at a rotating speed of 150r/min for 6min, adding 48g of methacrylic acid, heating to 110 ℃, adding a triphenylphosphine catalyst into the mixture in four times, adding 0.1g, 0.12g and 0.12g of the triphenylphosphine catalyst into the mixture each time, increasing the temperature by 3-4 ℃ after each addition, finally reacting at 120-125 ℃, reacting at 120-125 ℃ for 6h after the addition is finished, cooling to 80 ℃ when the acid value of the system is less than 10KOH/(mg/g), adding 28g of hydroxyethyl methacrylate into the mixture, and stirring uniformly to obtain the modified epoxy resin, wherein the schematic reaction formula is shown in the following formula.
Figure BDA0003126679450000041
(3) And preparing a sample:
the preparation method comprises the steps of stirring and mixing nano particle POSS and modified epoxy resin uniformly to obtain nano POSS/epoxy resin, adding photoinitiator (2,4, 6-trimethylbenzoyl chloride) diphenyl phosphine oxide accounting for 1% of the total amount of the nano particle POSS and the modified epoxy resin, stirring uniformly, and then putting the mixture into an oven at 70 ℃ for 5min to eliminate bubbles. And then pouring the resin into a mold, and irradiating the resin for 2-3 min by using an ultraviolet lamp to cure and mold the resin to obtain the final epoxy resin nano composite material with low dielectric constant.
During the operation of the step (3), POSS nanoparticles with different contents are respectively selected to investigate the influence of the POSS nanoparticles on the dielectric constant, wherein the mass fractions of the POSS nanoparticles to the total mass of the POSS nanoparticles and the modified resin are respectively 0 wt%, 10 wt%, 20 wt%, 30 wt%, 40 wt% and 50 wt%, that is, the mass ratios of the POSS nanoparticles to the modified epoxy resin are respectively 0: 10; 1: 9; 2: 8; 3: 7; 4: 6; 5: 5.
fourier transform infrared spectrograms of the epoxy resin and the modified epoxy resin in this example are shown in FIG. 1, and it can be seen that the modified epoxy resin is about 3400cm in comparison with the epoxy resin before modification-1the-OH stretching vibration peak of the hydroxyl group is enhanced at 830cm-1The characteristic absorption peak of the left and right epoxy groups C-O-C is weakened and appears at 1740cm-1The stretching vibration peak of ester carbonyl C ═ O appears at the left and right, and is 1620cm-1Stretching vibration peaks of carbon-carbon double bonds C ═ C appear on the left and right. The modification of the epoxy resin was successful in this example.
The dielectric constants of the prepared samples are shown in FIG. 2 (wherein EP represents the substance obtained by not adding POSS particles in the step (3), POSS/EP-10% represents the POSS nanoparticles accounting for 10% of the total mass of the POSS nanoparticles and the modified resin, and the others are as described above), it can be seen that, after the polyhedral oligomeric silsesquioxane (POSS) nanoparticles are added, the nanocomposite with low dielectric constant is prepared, and the dielectric constants of the POSS/EP nanocomposites with POSS contents of 0%, 10%, 20%, 30%, 40% and 50% are 4.0, 3.0, 2.8, 2.7, 2.2 and 2.6 respectively at a temperature of 25 ℃ and a frequency of 1 MHz. Wherein the nano composite material with POSS content of 40% (POSS/EP-40%) has the lowest dielectric constant of 2.2. The data show that the cage type Polysilsesquioxane (POSS)/epoxy resin nano composite material with low dielectric constant is prepared by the method. The above dielectric constants were measured by using an Alpha-A type wide-band dielectric impedance spectrometer (Novocontrl, Germany).
FIG. 3 is a schematic diagram of the low dielectric constant mechanism of cage Polysilsesquioxane (POSS)/epoxy resin nanocomposite, which utilizes the nano structure and high specific surface area of cage polysilsesquioxane, and the molecule of the cage polysilsesquioxane is in a cage structure, and Si-O forms an inorganic framework core, and the periphery of the cage polysilsesquioxane is surrounded by organic groups. Has excellent reactivity, heat resistance, flame retardance, porosity and nano-size effect. The nano particles with hollow structures are introduced into the polymer, the good dispersion of the nano particles in the composite material is ensured, the nano pore structure can be formed, the dielectric constant of the material can be effectively reduced, and the aim of preparing the epoxy resin nano composite material with low dielectric constant is finally achieved.

Claims (7)

1.一种低介电常数的笼型聚倍半硅氧烷/环氧树脂纳米复合材料，由以下原料制备而成：改性环氧树脂、笼型聚倍半硅氧烷和光引发剂；1. A cage-type polysilsesquioxane/epoxy resin nanocomposite material with low dielectric constant is prepared from the following raw materials: modified epoxy resin, cage-type polysilsesquioxane and photoinitiator; 所述笼型聚倍半硅氧烷的加入量占笼型聚倍半硅氧烷和改性环氧树脂总量的10％-50％，优选为40％；The added amount of the cage-type polysilsesquioxane accounts for 10%-50% of the total amount of the cage-type polysilsesquioxane and the modified epoxy resin, preferably 40%; 所述光引发剂的加入量占笼型聚倍半硅氧烷和改性环氧树脂总量的0.5％-2％，优选为1％；The added amount of the photoinitiator accounts for 0.5%-2% of the total amount of the cage-type polysilsesquioxane and the modified epoxy resin, preferably 1%; 其中，所述改性环氧树脂由以下原料制备而成：环氧树脂、稀释剂、开环剂和催化剂；Wherein, the modified epoxy resin is prepared from the following raw materials: epoxy resin, diluent, ring-opening agent and catalyst; 所述环氧树脂、稀释剂、开环剂和催化剂的质量比为(80-120)：(10-50)：(20-60)：(0.1-1)。The mass ratio of the epoxy resin, diluent, ring-opening agent and catalyst is (80-120):(10-50):(20-60):(0.1-1). 2.根据权利要求1所述的低介电常数的笼型聚倍半硅氧烷/环氧树脂纳米复合材料，其特征在于，所述笼型聚倍半硅氧烷为甲基丙烯酰氧丙基笼型聚倍半硅氧烷。2 . The cage-type polysilsesquioxane/epoxy resin nanocomposite material with low dielectric constant according to claim 1 , wherein the cage-type polysilsesquioxane is methacryloyloxy Propyl cage polysilsesquioxane. 3.根据权利要求2所述的低介电常数的笼型聚倍半硅氧烷/环氧树脂纳米复合材料，其特征在于，所述环氧树脂为双酚A环氧树脂；3. The cage-type polysilsesquioxane/epoxy nanocomposite material with low dielectric constant according to claim 2, wherein the epoxy resin is bisphenol A epoxy resin; 所述开环剂选自伯胺、仲胺、酚类化合物和羧酸类化合物中的一种；The ring-opening agent is selected from one of primary amines, secondary amines, phenolic compounds and carboxylic acid compounds; 所述催化剂为三苯基膦；The catalyst is triphenylphosphine; 所述稀释剂为甲基丙烯酸羟乙酯。The diluent is hydroxyethyl methacrylate. 4.根据权利要求3所述的低介电常数的笼型聚倍半硅氧烷/环氧树脂纳米复合材料，其特征在于，所述光引发剂为2,4,6-三甲基苯甲酰基-二苯基氧化膦。4. The cage-type polysilsesquioxane/epoxy resin nanocomposite material with low dielectric constant according to claim 3, wherein the photoinitiator is 2,4,6-trimethylbenzene Formyl-diphenylphosphine oxide. 5.一种权利要求1-4任意一项所述的低介电常数的笼型聚倍半硅氧烷/环氧树脂纳米复合材料的制备方法，具体包括如下步骤：5. the preparation method of the cage-type polysilsesquioxane/epoxy resin nanocomposite material of low dielectric constant described in any one of claim 1-4, specifically comprises the steps: (1)环氧树脂改性：在反应容器中加入环氧树脂、开环剂和催化剂，进行开环反应得到甲基丙烯酸基环氧树脂；然后向其中加入稀释剂调节粘度，得到甲基丙烯酸基环氧树脂混合物，即改性环氧树脂；(1) Epoxy resin modification: add epoxy resin, ring-opening agent and catalyst in the reaction vessel, carry out ring-opening reaction to obtain methacrylic acid-based epoxy resin; then add diluent to it to adjust viscosity to obtain methacrylic acid base epoxy resin mixture, i.e. modified epoxy resin; (2)将步骤(1)的改性环氧树脂和笼型聚倍半硅氧烷混合均匀，然后向其中加入光引发剂，通过紫外光进行固化成型。(2) Mixing the modified epoxy resin of step (1) and the cage-type polysilsesquioxane uniformly, then adding a photoinitiator to it, and curing and molding by ultraviolet light. 6.根据权利要求5所述的制备方法，其特征在于，所述步骤(1)中的开环反应在100～150℃下进行，反应时间为4-12h，当体系酸值小于10KOH/(mg/g)时，降温至90℃以下，再向体系中加入稀释剂。6. The preparation method according to claim 5, wherein the ring-opening reaction in the step (1) is carried out at 100-150 DEG C, and the reaction time is 4-12h, and when the acid value of the system is less than 10KOH/( mg/g), lower the temperature to below 90 °C, and then add diluent to the system. 7.根据权利要求5所述的制备方法，其特征在于，所述步骤(1)中催化剂分多次加入，每次加入的同时将体系温度升高3～4℃。7 . The preparation method according to claim 5 , wherein in the step (1), the catalyst is added in multiple portions, and the temperature of the system is increased by 3 to 4° C. while each addition is performed. 8 .
CN202110692506.3A 2021-06-22 2021-06-22 A kind of cage type polysilsesquioxane/epoxy nanocomposite material with low dielectric constant and preparation method thereof Active CN113201104B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110692506.3A CN113201104B (en) 2021-06-22 2021-06-22 A kind of cage type polysilsesquioxane/epoxy nanocomposite material with low dielectric constant and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110692506.3A CN113201104B (en) 2021-06-22 2021-06-22 A kind of cage type polysilsesquioxane/epoxy nanocomposite material with low dielectric constant and preparation method thereof

Publications (2)

Publication Number Publication Date
CN113201104A true CN113201104A (en) 2021-08-03
CN113201104B CN113201104B (en) 2022-06-28

Family

ID=77022643

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110692506.3A Active CN113201104B (en) 2021-06-22 2021-06-22 A kind of cage type polysilsesquioxane/epoxy nanocomposite material with low dielectric constant and preparation method thereof

Country Status (1)

Country Link
CN (1) CN113201104B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114539876A (en) * 2022-03-01 2022-05-27 高尧 Corrosion-resistant heat-dissipation protective coating and preparation method thereof
CN114806091A (en) * 2022-05-18 2022-07-29 陈全辉 POSS-CuPc-SiO 2 Preparation method of modified epoxy resin composite material

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103304960A (en) * 2013-05-23 2013-09-18 厦门大学 Preparation method of co-continuous POSS (Polyhedral Oligomeric Silsesquioxane)-epoxy modified resin
CN104845049A (en) * 2015-06-05 2015-08-19 厦门大学 Preparation method of phosphorus-containing flame-retardant organic-inorganic hybrid silsesquioxane/epoxy resin hybrid material
CN108441153A (en) * 2018-04-08 2018-08-24 湖州丘天电子科技有限公司 A kind of high-performance epoxy resin base electron pouring sealant and its preparation process
CN108659471A (en) * 2018-05-23 2018-10-16 北京化工大学 A kind of light-cured resin and preparation method thereof that polyfunctionality POSS is modified

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103304960A (en) * 2013-05-23 2013-09-18 厦门大学 Preparation method of co-continuous POSS (Polyhedral Oligomeric Silsesquioxane)-epoxy modified resin
CN104845049A (en) * 2015-06-05 2015-08-19 厦门大学 Preparation method of phosphorus-containing flame-retardant organic-inorganic hybrid silsesquioxane/epoxy resin hybrid material
CN108441153A (en) * 2018-04-08 2018-08-24 湖州丘天电子科技有限公司 A kind of high-performance epoxy resin base electron pouring sealant and its preparation process
CN108659471A (en) * 2018-05-23 2018-10-16 北京化工大学 A kind of light-cured resin and preparation method thereof that polyfunctionality POSS is modified

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114539876A (en) * 2022-03-01 2022-05-27 高尧 Corrosion-resistant heat-dissipation protective coating and preparation method thereof
CN114806091A (en) * 2022-05-18 2022-07-29 陈全辉 POSS-CuPc-SiO 2 Preparation method of modified epoxy resin composite material

Also Published As

Publication number Publication date
CN113201104B (en) 2022-06-28

Similar Documents

Publication Publication Date Title
US8785522B2 (en) Low-permittivity resin composition
Binyamin et al. 3D printing thermally stable high‐performance polymers based on a dual curing mechanism
CN113201104A (en) Cage type polysilsesquioxane/epoxy resin nano composite material with low dielectric constant and preparation method thereof
CN106398173A (en) Thermosetting resin composition, and resin varnish, metal foil with resin, resin film, metal-clad laminate, and printed wiring board using the same
JPS63183958A (en) Thermosetting resin composition
Kim et al. Preparation and curing chemistry of ultra-low CTE epoxy composite based on the newly-designed triethoxysilyl-functionalized ortho-cresol novolac epoxy
KR20050014794A (en) Hydrosilylation Cure of Silicone Resin Containing Colloidal Silica and A Process for Producing The Same
CN116478536B (en) Core-shell particle for toughening thermosetting resin, composite material and preparation method
JP2015189638A (en) surface-modified silica powder and slurry composition
KR20230002455A (en) Spherical Silica Powder
JP2004277726A (en) Resin composition and method for manufacturing the same
JP2012201726A (en) Paste composition, and magnetic substance composition made using the same
TWI813852B (en) Photocurable resin composition, film containing the composition, cured material obtained by curing the composition or the film, wiring structure, electronic component and semiconductor device
KR20170039137A (en) Silane-treated forsterite fine particles and production method therefor, and organic solvent dispersion of silane-treated forsterite fine particles and production method therefor
KR100394080B1 (en) Surface modified silica by plasma polymerization, preparation method of thereof and apparatus of thereof
JP6038064B2 (en) Surface-modified silica powder, slurry composition and resin composition using the same
KR20170052775A (en) Method for manufacturing epoxy-silica nanocomposite using surface treated silica
KR100526761B1 (en) An organic/inorganic nanohybrid and preparation method thereof using an aminosilane precusor
CN109825231A (en) A kind of fire-retardant uvioresistant epoxy encapsulating compound and preparation method thereof
KR20100130899A (en) Barium titanate powder to which polyimide precursor is bound, preparation method thereof and barium titanate powder / polyimide composite composition prepared using the same
US20050089642A1 (en) Dielectric materials preparation
CN106589832A (en) Cage-like silsesquioxane modified epoxy adhesive solution for high-Tg low-dielectric copper-clad plate and preparation method of adhesive solution
JP7619654B2 (en) Photosensitive resin composition, cured product thereof, and wiring structure including the cured product
CN117209959B (en) Polymer composite material containing inorganic filler and production process thereof
CN1178785C (en) Method for producing fluorine-based composite material sheet

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20230310

Address after: Room 113, Building 599 Gaojing Road, Xujing Town, Qingpu District, Shanghai, 20179

Patentee after: SHANG HAI YINAI NEW MATERIAL TECHNOLOGY LTD.

Address before: 266042 Zhengzhou Road, Shibei District, Qingdao, Shandong 53

Patentee before: QINGDAO University OF SCIENCE AND TECHNOLOGY

TR01 Transfer of patent right
PE01 Entry into force of the registration of the contract for pledge of patent right

Denomination of invention: A Low Dielectric Constant Cage Type Polysilsesquioxane/Epoxy Resin Nanocomposite Material and Its Preparation Method

Effective date of registration: 20231213

Granted publication date: 20220628

Pledgee: China Construction Bank Co.,Ltd. Shanghai Yangtze River Delta Integrated Demonstration Zone Sub branch

Pledgor: SHANG HAI YINAI NEW MATERIAL TECHNOLOGY LTD.

Registration number: Y2023310000845

PE01 Entry into force of the registration of the contract for pledge of patent right
PC01 Cancellation of the registration of the contract for pledge of patent right

Granted publication date: 20220628

Pledgee: China Construction Bank Co.,Ltd. Shanghai Yangtze River Delta Integrated Demonstration Zone Sub branch

Pledgor: SHANG HAI YINAI NEW MATERIAL TECHNOLOGY LTD.

Registration number: Y2023310000845

PC01 Cancellation of the registration of the contract for pledge of patent right