CN113193736B - Medium-voltage variable-frequency brake unit topological structure and voltage reduction method of bus thereof - Google Patents

Medium-voltage variable-frequency brake unit topological structure and voltage reduction method of bus thereof Download PDF

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Publication number
CN113193736B
CN113193736B CN202110496687.2A CN202110496687A CN113193736B CN 113193736 B CN113193736 B CN 113193736B CN 202110496687 A CN202110496687 A CN 202110496687A CN 113193736 B CN113193736 B CN 113193736B
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voltage
bus
circuit
insulated gate
gate transistor
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CN113193736A (en
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郭光裕
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Shenzhen Sanxing Technology Co ltd
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Shenzhen Sanxing Technology Co ltd
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    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/08Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/32Means for protecting converters other than automatic disconnection
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/36Means for starting or stopping converters
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02PCONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
    • H02P27/00Arrangements or methods for the control of AC motors characterised by the kind of supply voltage
    • H02P27/04Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)

Abstract

The invention discloses a topological structure of a medium-voltage variable-frequency brake unit and a bus voltage reducing method thereof, which relate to the field of frequency converters and motor control and comprise a total bus, a low-voltage bus circuit, a bus voltage sampling and control circuit, wherein the bus voltage sampling and control circuit monitors the voltage change of the total bus, a third output end outputs PWM signals to a signal input end of the low-voltage bus circuit, the total bus is controlled to input voltage from a P+ port to a voltage input end of the low-voltage bus circuit, the low-voltage bus circuit can equally divide voltage values so as to reduce redundant energy on the total bus, and the voltage output end of the low-voltage bus circuit is output to an N-port.

Description

Medium-voltage variable-frequency brake unit topological structure and voltage reduction method of bus thereof
Technical Field
The invention relates to the field of frequency converters and motor control, in particular to a medium-voltage frequency conversion braking unit topological structure and a voltage reduction method of a bus thereof.
Background
At present, the braking equipment adopted when the medium-voltage AC1140 frequency converter controls the motor has large mechanical friction and high failure rate, the voltage required by the direct current bus is about 2000V when the AC1140 frequency converter brakes, the required voltage value is too high, the process is complex when the braking unit is designed, the difficulty coefficient is large, the reliability of a finished product formed by a dense circuit is difficult to grasp, and the failure is easy to occur.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention provides a topological structure of a medium-voltage variable-frequency brake control unit and a voltage reduction method of a bus thereof, which can reduce the voltage value of a direct-current bus and facilitate the design of a brake unit.
The technical scheme adopted for solving the technical problems is as follows:
the utility model provides a medium voltage variable frequency brake braking unit topological structure, including total bus, low voltage bus circuit and bus voltage sampling and control circuit, total bus is equipped with P+ port and N-port, bus voltage sampling and control circuit are equipped with first detection end, second detection end and third output, low voltage bus circuit is equipped with voltage input, voltage output and signal input, P+ port and bus voltage sampling of total bus and control circuit's first detection end are connected, N-port and bus voltage sampling of total bus and control circuit's second detection end are connected, bus voltage sampling and control circuit's third output and low voltage bus circuit's signal input are connected, bus voltage sampling and control circuit control total bus's voltage variation, output PWM signal to low voltage bus circuit's signal input by third output, control total bus is with voltage from P+ port input to low voltage bus circuit's voltage input, low voltage bus circuit can divide the energy equally, and output to N-port by low voltage bus circuit's voltage output.
As an improvement of the technical scheme, the low-voltage bus circuit comprises a primary low-voltage bus circuit, a secondary low-voltage bus circuit and a tertiary low-voltage bus circuit, and the primary low-voltage bus circuit, the secondary low-voltage bus circuit and the tertiary low-voltage bus circuit are sequentially connected in series.
As an improvement of the technical scheme, the primary low-voltage bus circuit comprises an insulated gate transistor Q1, a primary IGBT driving circuit, a capacitor C1, a diode D1, resistors R1 and R4, wherein the insulated gate transistor Q1 is provided with a grid electrode, an emitter electrode and a collector electrode, the primary IGBT driving circuit is provided with an input end and an output end, the resistor R1 is connected with two ends of the capacitor C1 in parallel, one end of the capacitor C1 is connected with the cathode of the diode D1, the other end of the capacitor C1 is connected with the emitter electrode of the insulated gate transistor Q1, the anode of the diode D1 is connected with the gate electrode of the insulated gate transistor Q1, the cathode of the diode D1 is connected with the P+ port of the total bus bar through a voltage input end, the resistor R4 is connected between the anode and the cathode of the diode D1 in parallel, the collector electrode of the insulated gate transistor Q1 is connected with the output end of the primary IGBT driving circuit, and the input end of the primary IGBT driving circuit is connected with the bus voltage sampling and the third output end of the control circuit through a signal input end.
As an improvement of the technical scheme, the secondary low-voltage bus circuit comprises an insulated gate transistor Q2, a secondary IGBT driving circuit, a capacitor C2, a diode D2, resistors R2 and R5, wherein the insulated gate transistor Q2 is provided with a grid electrode, an emitter electrode and a collector electrode, the secondary IGBT driving circuit is provided with an input end and an output end, the resistor R2 is connected with two ends of the capacitor C2 in parallel, one end of the capacitor C2 is connected with the negative electrode of the diode D2, the other end of the capacitor C2 is connected with the emitter electrode of the insulated gate transistor Q2, the positive electrode of the diode D2 is connected with the grid electrode of the insulated gate transistor Q2, the resistor R5 is connected between the positive electrode and the negative electrode of the diode D2 in parallel, the collector electrode of the insulated gate transistor Q2 is connected with the output end of the secondary IGBT driving circuit, and the input end of the secondary IGBT driving circuit is connected with a bus voltage sampling and a third output end of the control circuit through a signal input end.
As the improvement of the technical scheme, the three-stage low-voltage bus circuit comprises an insulated gate transistor Q3, a three-stage IGBT driving circuit, a capacitor C3, a diode D3, resistors R3 and R6, wherein the insulated gate transistor Q3 is provided with a grid electrode, an emitter electrode and a collector electrode, the three-stage IGBT driving circuit is provided with an input end and an output end, the resistor R3 is connected with two ends of the capacitor C3 in parallel, one end of the capacitor C3 is connected with the cathode electrode of the diode D3, the other end of the capacitor C3 is connected with the emitter electrode of the insulated gate transistor Q3, the anode electrode of the diode D3 is connected with the grid electrode of the insulated gate transistor Q3, the resistor R6 is connected between the anode electrode and the cathode electrode of the diode D3 in parallel, the collector electrode of the insulated gate transistor Q3 is connected with the output end of the three-stage IGBT driving circuit, the emitter electrode of the insulated gate transistor Q3 is connected with the N-port of the total bus, and the input end of the three-stage IGBT driving circuit is connected with the bus voltage sampling and the third output end of the control circuit through a signal input end.
As an improvement of the above technical solution, the emitter of the insulated gate transistor Q1 is connected to the cathode of the diode D2, and the emitter of the insulated gate transistor Q2 is connected to the cathode of the diode D3.
As an improvement of the above technical solution, the insulated gate transistor Q1, the insulated gate transistor Q2 and the insulated gate transistor Q3 are the same type with freewheeling diode.
As an improvement of the technical scheme, the invention also comprises a bus voltage reducing method, wherein the bus voltage reducing method comprises the step that a low-voltage bus circuit is externally connected with a bus voltage, and the bus voltage sampling and control circuit can output PWM signals to the low-voltage bus circuit by monitoring the voltage value of the bus voltage, so that the voltage of the bus voltage can be controlled to flow into the low-voltage bus circuit for voltage division, and the redundant energy on the bus voltage can be reduced.
The beneficial effects of the invention are as follows: through the improvement of the circuit structure, the invention can reduce the DC bus voltage of the brake unit of the medium-voltage frequency converter, further reduce the design difficulty of the brake unit, has simpler structure, has more outstanding effect and has wide market application value.
Drawings
The invention will be further described with reference to the drawings and examples.
Fig. 1 is a schematic circuit diagram of the present invention.
Detailed Description
The conception, specific structure, and technical effects produced by the present invention will be clearly and completely described below with reference to the embodiments and the drawings to fully understand the objects, features, and effects of the present invention. It is apparent that the described embodiments are only some embodiments of the present invention, but not all embodiments, and that other embodiments obtained by those skilled in the art without inventive effort are within the scope of the present invention based on the embodiments of the present invention. In addition, all the coupling/connection relationships referred to in the patent are not direct connection of the single-finger members, but rather, it means that a better coupling structure can be formed by adding or subtracting coupling aids depending on the specific implementation. The technical features in the invention can be interactively combined on the premise of no contradiction and conflict.
Referring to fig. 1, the invention discloses a topology structure of a medium-voltage variable-frequency brake unit, which comprises a total bus 1, a low-voltage bus circuit and a bus voltage sampling and control circuit 3, wherein the total bus 1 is provided with a P+ port and an N-port, the bus voltage sampling and control circuit 3 is provided with a first detection end 4, a second detection end 5 and a third output end 6, the low-voltage bus circuit is provided with a voltage input end 7, a voltage output end 8 and a signal input end 9, the P+ port of the total bus 1 is connected with the first detection end 4 of the bus voltage sampling and control circuit 3, the N-port of the total bus 1 is connected with the second detection end 5 of the bus voltage sampling and control circuit 3, the third output end 6 of the bus voltage sampling and control circuit 3 is connected with the signal input end 9 of the low-voltage bus circuit, the bus voltage sampling and control circuit 3 monitors the voltage change of the total bus 1, the signal input end 9 of the low-voltage circuit is output by the third output end 6, the total bus 1 is controlled to input the voltage from the P+ port to the voltage input end 7 of the low-voltage bus circuit, the low-voltage bus 1 can be uniformly distributed to the low-voltage bus 1, and the excess voltage output from the low-voltage output end 8 can be reduced.
In the above embodiment, the bus voltage sampling and control circuit 3 of the present invention monitors the voltage value on the total bus 1 in real time through the first detection end 4 and the second detection end 5, if the voltage value is greater than 2000V, the main control CPU inside the bus voltage sampling and control circuit 3 sends out the PWM control signal through the bus voltage sampling and control circuit 3, drives the voltage value on the total bus 1 to enter the low-voltage bus circuit from the voltage input end 7, performs voltage division to release the redundant energy on the total bus 1, and then outputs the voltage value after voltage reduction to the N-port from the voltage output end 8.
Further, the low-voltage bus circuit comprises a first-stage low-voltage bus circuit 10, a second-stage low-voltage bus circuit 11 and a third-stage low-voltage bus circuit 12, wherein the first-stage low-voltage bus circuit 10, the second-stage low-voltage bus circuit 11 and the third-stage low-voltage bus circuit 12 are sequentially connected in series.
The primary low-voltage bus circuit 10 includes an insulated gate transistor Q1, a primary IGBT driving circuit 13, a capacitor C1, a diode D1, a resistor R1 and a resistor R4, where the insulated gate transistor Q1 is provided with a gate, an emitter and a collector, the resistor R1 is connected in parallel to two ends of the capacitor C1, one end of the capacitor C1 is connected with the cathode of the diode D1, the other end of the capacitor C1 is connected with the emitter of the insulated gate transistor Q1, the anode of the diode D1 is connected with the gate of the insulated gate transistor Q1, the cathode of the diode D1 is connected with the p+ port of the total bus 1 through a voltage input terminal 7, the resistor R4 is connected in parallel between the anode and the cathode of the diode D1, the collector of the insulated gate transistor Q1 is connected with the output terminal of the primary IGBT driving circuit 13, and the input terminal of the primary IGBT driving circuit 13 is connected with the third output terminal 6 of the bus voltage sampling and control circuit 3 through a signal input terminal 9.
The second-stage low-voltage bus circuit 11 includes an insulated gate transistor Q2, a second-stage IGBT driving circuit 14, a capacitor C2, a diode D2, a resistor R2, and a resistor R5, where the insulated gate transistor Q2 is provided with a gate, an emitter, and a collector, the resistor R2 is connected in parallel to two ends of the capacitor C2, one end of the capacitor C2 is connected to a cathode of the diode D2, the other end of the capacitor C2 is connected to the emitter of the insulated gate transistor Q2, an anode of the diode D2 is connected to the gate of the insulated gate transistor Q2, the resistor R5 is connected in parallel between an anode and a cathode of the diode D2, a collector of the insulated gate transistor Q2 is connected to an output of the second-stage IGBT driving circuit 14, and an input of the second-stage IGBT driving circuit 14 is connected to the third output 6 of the bus voltage sampling and control circuit 3 through a signal input 9.
The three-stage low-voltage bus circuit 12 comprises an insulated gate transistor Q3, a three-stage IGBT driving circuit 15, a capacitor C3, a diode D3, resistors R3 and R6, the insulated gate transistor Q3 is provided with a gate, an emitter and a collector, the resistor R3 is connected in parallel with two ends of the capacitor C3, one end of the capacitor C3 is connected with the cathode of the diode D3, the other end of the capacitor C3 is connected with the emitter of the insulated gate transistor Q3, the anode of the diode D3 is connected with the gate of the insulated gate transistor Q3, the resistor R6 is connected in parallel between the anode and the cathode of the diode D3, the collector of the insulated gate transistor Q3 is connected with the output end of the three-stage IGBT driving circuit 15, the emitter of the insulated gate transistor Q3 is connected with the N-port of the total bus 1, and the input end of the three-stage IGBT driving circuit 15 is connected with the third output end 6 of the bus voltage sampling and control circuit 3 through the signal input end 9. An emitter of the insulated gate transistor Q1 is connected to a cathode of the diode D2, and an emitter of the IGBTQ2 is connected to a cathode of the diode D3. The insulated gate transistors Q1, Q2 and Q3 are the same type of freewheeling diode.
In the above embodiment, the voltage of the total bus 1 flows into the low-voltage bus circuit from the voltage input end 7, after passing through the capacitor C1 and the resistor R1 of the primary low-voltage bus circuit 10, the capacitor C2 and the resistor R2 of the secondary low-voltage bus circuit 11, and the capacitor C3 and the resistor R3 of the tertiary low-voltage bus circuit 12, the voltage is equally divided into three parts, when the bus voltage sampling and control circuit 3 monitors the voltage of the total bus 1 to 2000V, the main control CPU of the bus voltage sampling and control circuit 3 sends out PWM control signals, and sends out PWM control signals through the signal output end 9, and then enters the primary IGBT driving circuit 13, the secondary IGBT driving circuit 14 and the tertiary IGBT driving circuit 15 respectively, the primary IGBT driving circuit 13 drives the insulated gate transistor Q1, the secondary IGBT driving circuit 14 drives the insulated gate transistor Q2, the tertiary IGBT driving circuit 15 respectively responds, and then flows through the resistor R1, the resistor R2 and the resistor R3, and after the surplus energy on the total bus 1 is released, the total bus voltage 1 is output from the primary IGBT driving circuit 13 to the output end of the total bus 1.
A voltage reduction method of bus includes connecting bus 1 with low voltage bus circuit, outputting PWM signal to bus circuit by bus voltage sampling and control circuit 3, controlling voltage of bus 1 to flow into bus circuit for voltage division to reduce redundant energy on bus 1. Thereby changing the high voltage value of the total bus 1.
The beneficial effects of the invention are as follows: through the improvement of the circuit structure, the invention can reduce the DC bus voltage of the brake unit of the medium-voltage frequency converter, further reduce the design difficulty of the brake unit, has simpler structure, has more outstanding effect and has wide market application value.
While the preferred embodiment of the present invention has been described in detail, the present invention is not limited to the embodiments, and those skilled in the art can make various equivalent modifications or substitutions without departing from the spirit of the present invention, and these equivalent modifications or substitutions are included in the scope of the present invention as defined in the appended claims.

Claims (3)

1. The topological structure of the medium-voltage variable-frequency brake unit is characterized by comprising a total bus, a low-voltage bus circuit and a bus voltage sampling and control circuit, wherein the total bus is provided with a P+ port and an N-port, the bus voltage sampling and control circuit is provided with a first detection end, a second detection end and a third output end, the low-voltage bus circuit is provided with a voltage input end, a voltage output end and a signal input end, the P+ port of the total bus is connected with the first detection end of the bus voltage sampling and control circuit, the N-port of the total bus is connected with the second detection end of the bus voltage sampling and control circuit, the third output end of the bus voltage sampling and control circuit is connected with the signal input end of the low-voltage bus circuit, the bus voltage sampling and control circuit monitors the voltage change of the total bus, the third output end outputs a PWM signal to the signal input end of the low-voltage bus circuit, the total bus is controlled to input the voltage from the P+ port to the voltage input end of the low-voltage bus circuit, the low-voltage bus circuit can reduce the redundant energy on the total bus uniformly and the voltage output to the N-port by the voltage output end of the low-voltage bus circuit;
the low-voltage bus circuit comprises a primary low-voltage bus circuit, a secondary low-voltage bus circuit and a tertiary low-voltage bus circuit, and the primary low-voltage bus circuit, the secondary low-voltage bus circuit and the tertiary low-voltage bus circuit are sequentially connected in series;
the primary low-voltage bus circuit comprises an insulated gate transistor Q1, a capacitor C1 and a resistor R1, wherein the insulated gate transistor Q1 is provided with a gate, an emitter and a collector, the resistor R1 is connected in parallel with two ends of the capacitor C1, one end of the capacitor C1 is connected with a P+ port of the total bus through a voltage input end, and the other end of the capacitor C1 is connected with the emitter of the insulated gate transistor Q1;
the secondary low-voltage bus circuit comprises an insulated gate transistor Q2, a capacitor C2 and a resistor R2, wherein the insulated gate transistor Q2 is provided with a grid electrode, an emitter and a collector, the resistor R2 is connected in parallel with two ends of the capacitor C2, and one end of the capacitor C2 is connected with the other end of the capacitor C1;
the three-stage low-voltage bus circuit comprises an insulated gate transistor Q3, a capacitor C3 and a resistor R3, wherein the insulated gate transistor Q3 is provided with a grid electrode, an emitter electrode and a collector electrode, the resistor R3 is connected in parallel with two ends of the capacitor C3, one end of the capacitor C3 is connected with the other end of the capacitor C2, the other end of the capacitor C3 is connected with the emitter electrode of the insulated gate transistor Q3, and the emitter electrode of the insulated gate transistor Q3 is connected with an N-port of the total bus;
the primary low-voltage bus circuit further comprises a primary IGBT driving circuit, a diode D1 and an R4, wherein the primary IGBT driving circuit is provided with an input end and an output end, one end of a capacitor C1 is connected with the negative electrode of the diode D1, the other end of the capacitor C1 is connected with the emitter of an insulated gate transistor Q1, the positive electrode of the diode D1 is connected with the collector of the insulated gate transistor Q1, the negative electrode of the diode D1 is connected with the P+ port of the bus bar through a voltage input end, a resistor R4 is connected between the positive electrode and the negative electrode of the diode D1 in parallel, the grid electrode of the insulated gate transistor Q1 is connected with the output end of the primary IGBT driving circuit, and the input end of the primary IGBT driving circuit is connected with the bus voltage sampling and the third output end of the control circuit through a signal input end;
the secondary low-voltage bus circuit further comprises a secondary IGBT driving circuit, a diode D2 and an R5, wherein the secondary IGBT driving circuit is provided with an input end and an output end, one end of a capacitor C2 is connected with the cathode of the diode D2, the other end of the capacitor C2 is connected with the emitter of an insulated gate transistor Q2, the anode of the diode D2 is connected with the collector of the insulated gate transistor Q2, a resistor R5 is connected between the anode and the cathode of the diode D2 in parallel, the grid electrode of the insulated gate transistor Q2 is connected with the output end of the secondary IGBT driving circuit, and the input end of the secondary IGBT driving circuit is connected with the bus voltage sampling and the third output end of the control circuit through a signal input end;
the three-stage low-voltage bus circuit further comprises a three-stage IGBT driving circuit, a diode D3 and an R6, wherein the three-stage IGBT driving circuit is provided with an input end and an output end, one end of a capacitor C3 is connected with the cathode of the diode D3, the other end of the capacitor C3 is connected with the emitter of an insulated gate transistor Q3, the anode of the diode D3 is connected with the collector of the insulated gate transistor Q3, a resistor R6 is connected between the anode and the cathode of the diode D3 in parallel, the grid of the insulated gate transistor Q3 is connected with the output end of the three-stage IGBT driving circuit, and the input end of the three-stage IGBT driving circuit is connected with the bus voltage sampling and the third output end of the control circuit thereof through a signal input end.
2. A medium voltage variable frequency brake unit topology according to claim 1, characterized in that the emitter of the insulated gate transistor Q1 is connected to the cathode of the diode D2 and the emitter of the insulated gate transistor Q2 is connected to the cathode of the diode D3.
3. The medium voltage variable frequency brake unit topology according to claim 1, wherein the insulated gate transistor Q1, the insulated gate transistor Q2 and the insulated gate transistor Q3 are of the same type with freewheeling diode.
CN202110496687.2A 2021-05-07 2021-05-07 Medium-voltage variable-frequency brake unit topological structure and voltage reduction method of bus thereof Active CN113193736B (en)

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CN102969881A (en) * 2012-11-30 2013-03-13 深圳市英威腾电气股份有限公司 Voltage sharing protection circuit and diode clamp multi-level topology device
CN112366658A (en) * 2020-11-16 2021-02-12 中国计量大学 IGBT over-current and over-voltage protection circuit and IGBT over-current and over-voltage protection method

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CN103538481B (en) * 2012-07-12 2015-11-18 北汽福田汽车股份有限公司 The control system of electronlmobil and brake protection device
JP6354623B2 (en) * 2015-03-05 2018-07-11 住友電気工業株式会社 Conversion device
CN106602856B (en) * 2015-10-20 2019-01-04 沈阳新松机器人自动化股份有限公司 A kind of hardware protection circuit and its method of the over-voltage of driver busbar voltage
CN206992934U (en) * 2017-06-26 2018-02-09 杭州奥能电源设备有限公司 More electric capacity series average-voltage circuits
CN110970884A (en) * 2019-12-28 2020-04-07 武汉港迪电气传动技术有限公司 Brake unit circuit of frequency converter

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Publication number Priority date Publication date Assignee Title
CN102969881A (en) * 2012-11-30 2013-03-13 深圳市英威腾电气股份有限公司 Voltage sharing protection circuit and diode clamp multi-level topology device
CN112366658A (en) * 2020-11-16 2021-02-12 中国计量大学 IGBT over-current and over-voltage protection circuit and IGBT over-current and over-voltage protection method

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