CN113193157A - Method for preparing silicon-based OLED (organic light emitting diode) micro display by nanoimprint lithography - Google Patents
Method for preparing silicon-based OLED (organic light emitting diode) micro display by nanoimprint lithography Download PDFInfo
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- CN113193157A CN113193157A CN202110453532.0A CN202110453532A CN113193157A CN 113193157 A CN113193157 A CN 113193157A CN 202110453532 A CN202110453532 A CN 202110453532A CN 113193157 A CN113193157 A CN 113193157A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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Abstract
The invention relates to a method for preparing a silicon-based OLED (organic light emitting diode) micro display by nano imprinting, which comprises the following steps of: coating a photoresist on the surface of the substrate; pressing a nano-imprint template with a specific pattern structure on the photoresist at a certain pressure, and forming a microstructure corresponding to the template pattern on the photoresist after thermal curing or ultraviolet curing; removing the residual photoresist on the substrate to leave a microstructure which is complementary with the anode pixel pattern on the substrate; an anode layer is formed on the substrate by an evaporation process. The beneficial effects are that: the anode pixel array is prepared by using a nano-imprinting technology, the color filter layer and the glass cover plate process are completed at one time by adopting a prefabrication and attaching mode, and the photoetching process with large equipment investment is completely cancelled on a silicon-based OLED production line. The preparation process of the technical method provided by the invention is simpler, the production cost is low, and the yield and the productivity can be effectively improved.
Description
Technical Field
The invention relates to the technical field of display, in particular to a method for preparing a silicon-based OLED (organic light emitting diode) micro-display by nano-imprinting.
Background
The silicon-based OLED micro-display is an OLED display manufactured on a semiconductor CMOS driving circuit, not only has the advantages of the OLED display, but also has the advantages of miniaturization and high integration of a semiconductor chip, the size of the silicon-based OLED micro-display is generally below 1 inch, the ultra-high pixel density of more than 5000PPI can be realized, and compared with a common OLED or LCD display (less than 1000PPI), a display picture is finer and more vivid; in addition, the micro-display aperture opening ratio of the silicon-based OLED is far higher than that of a common OLED display, the near-to-eye display effect is better, and the feeling of pixel particles is not easy to perceive. Therefore, the silicon-based OLED microdisplay is particularly suitable for near-eye display, can meet various requirements from military, industry to the field of digital consumption, and has wide market prospect.
However, in the existing silicon-based OLED microdisplay manufacturing process, the anode pixels are manufactured by using a photolithography process, which not only requires a large amount of capital to purchase related equipment of the photolithography process, but also has a complicated photolithography process, which is not favorable for improving the yield.
Nanoimprint is a novel pattern transfer technique that can be used to process microstructures to "copy" a nano-pattern from a template onto a substrate instead of conventional lithography. Because the exposure and development process is not needed, the method has the advantages of high yield, low cost and simple process.
Based on the problems, the invention provides a method for preparing a silicon-based OLED (organic light emitting diode) micro display device by adopting a nanoimprint technology instead of a photoetching process, which is beneficial to reducing equipment investment, simplifying process procedures, improving yield and productivity and effectively reducing cost.
Disclosure of Invention
The invention provides a method for preparing a silicon-based OLED (organic light emitting diode) micro display by nanoimprint, which aims to solve the problems of high production cost and low yield in the prior art.
The technical problem solved by the invention is realized by adopting the following technical scheme:
a method for preparing a silicon-based OLED micro-display by nano-imprinting comprises the following steps:
s1 providing a substrate with a prepared CMOS driving circuit;
s2 coating a photoresist on the surface of the substrate;
s3, pressing the nano-imprint template with a specific pattern structure on the photoresist at a certain pressure, and forming a microstructure corresponding to the template pattern on the photoresist after thermal curing or ultraviolet curing; the nano-imprint template is an elastic template with a nano structure, and commonly used template materials mainly comprise silicon, quartz, polymers and the like.
S4, removing the residual photoresist on the substrate to leave a microstructure complementary to the anode pixel pattern on the substrate;
s5 forming an anode layer on the substrate through an evaporation process;
s6 evaporating a white OLED structure layer composed of multiple OLED organic functional layers on the anode layer in sequence, wherein the white OLED structure layer comprises a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer and an electron injection layer;
s7 forming a semi-transparent metal cathode layer on the OLED structure layer;
s8, preparing a thin film sealing layer on the cathode layer;
s9 attaching a glass cover plate on the film sealing layer.
In some embodiments, the material of the photoresist in step S2 is IPNR-T2000 nanoimprint photoresist from Micro Resist, Germany, with a thickness of 300 nm.
In some embodiments, the anode layer in step S5 is made of a metal material of aluminum (Al), or any one of oxides of Indium Tin Oxide (ITO), tin oxide (SnO2), and zinc oxide (ZnO).
In some embodiments, the anode layer has a thickness of 50 nm.
In some embodiments, the cathode layer in step S7 is a two-layer composite structure including a metal layer and an ITO layer.
In some embodiments, the metal layer is prepared by a thermal evaporation process.
In some embodiments, the material of the metal layer comprises a mixture of magnesium and silver, wherein the ratio of magnesium to silver is 10: 1.
In some embodiments, the ITO layer is prepared by a measurement and control sputtering process.
In some embodiments, the material of the sealing layer is Al2O3、TiO2、SiN、SiO2Any one or combination of the above, of the sealing layerThe thickness is 10 to 20 nm.
In some embodiments, the glass cover plate is pre-fabricated with a color filter layer in step S9.
In some embodiments, the filter layers include a red filter layer, a green filter layer, and a blue filter layer.
In some embodiments, the color filter layer has a fit registration accuracy of 1 um.
The invention has the beneficial effects that: according to the silicon-based OLED micro-display prepared by nano-imprinting, the anode pixel array is prepared by using the nano-imprinting technology, the color filter layer and the glass cover plate process are completed at one time by adopting a prefabrication and laminating mode, and a photoetching process with large equipment investment is completely cancelled on a silicon-based OLED production line. Meanwhile, the nano-imprinting technology has the technical advantages of ultrahigh resolution, easiness in volume production and high consistency, and a nano-imprinted template can be repeatedly used, so that the processing cost is greatly reduced, and the processing time is effectively shortened. The preparation process of the technical method provided by the invention is simpler, the production cost is low, and the yield and the productivity can be effectively improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without inventive exercise.
FIG. 1 is a drawing of the present invention: a flow diagram of a method for preparing a silicon-based OLED micro-display by nanoimprint lithography;
FIG. 2 is a drawing of the present invention: a schematic diagram of anode pixel preparation of a method for preparing a silicon-based OLED micro-display by nanoimprint lithography;
FIG. 3 is a schematic diagram of an anode pixel array fabricated by the method of the present invention;
fig. 4 is a schematic diagram of a silicon-based OLED microdisplay made by the method of the invention.
Wherein:
101-substrate, 102-photoresist, 102 a-residual photoresist, 103-template, 104-anode layer, 105-anode pixel, 106-white OLED structure layer, 107-cathode layer, 108-sealing layer, 109-color filter layer, 110-cover glass.
Detailed Description
In order to make the technical means, the creation characteristics, the achievement purposes and the effects of the invention easy to understand, the invention is further explained below by combining the specific drawings.
Example 1
Referring to fig. 1-4, a method for fabricating a silicon-based OLED microdisplay by nanoimprint includes the steps of:
s1 providing a substrate 101 with a prepared CMOS driving circuit;
s2 coating a photoresist 102 on the surface of the substrate as shown in part a in FIG. 2, wherein the photoresist 102 is made of IPNR-T2000 nano-imprint photoresist of Germany Micro Resist company and has a thickness of 300 nm;
s3 pressing the nano-imprint template 103 with a specific anode pixel pattern structure on the photoresist 102 at a certain pressure, as shown in part b of fig. 2, and after thermal curing or ultraviolet curing, forming a micro-structure corresponding to the template pattern on the photoresist 102 with a depth of 250 nm; the nano-imprinting template 103 is a polymer PDMS template, and Polydimethylsiloxane (PDMS) is a high-quality nano-imprinting template material due to good light transmittance, low surface energy (21.6mJ/cm3) and shrinkage rate, excellent solvent resistance and low cost.
S4, as shown in part c of fig. 2, removing the residual photoresist 102a on the substrate, so that a microstructure with a thickness of 200nm is left on the substrate 101 and the pattern of the anode pixel 105 is complementary;
s5, as shown in a d part of fig. 2, forming an anode layer 104 on the substrate 101 by an evaporation process, wherein the anode layer 104 is made of aluminum (Al) or any one of oxides such as Indium Tin Oxide (ITO), tin oxide (SnO2), and zinc oxide (ZnO); the anode layer 104 in this example is aluminum (Al) 50nm thick. As shown in part e of fig. 2, the photoresist 102 and the anode layer 104 thereon are removed using a lift-off process to form a metal anode pixel 105 on the silicon substrate 101, as shown in fig. 3.
S6, sequentially evaporating a white OLED structure layer 106 consisting of a plurality of OLED organic functional layers on the anode layer 104, wherein the white OLED structure layer comprises a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer and an electron injection layer; the OLED structure layer 106 may be formed by a general process, which is not described in detail in this embodiment.
S7 forming a semi-transparent metal cathode layer 107 on the OLED structure layer 106; the cathode layer 107 is a double-layer composite structure and comprises a metal layer and an ITO layer; the metal layer is prepared by a thermal evaporation process, and the material of the metal layer comprises a mixture of magnesium and silver, wherein the ratio of magnesium to silver is 10:1, and the thickness is 10 nm. The ITO layer is prepared through a measurement and control sputtering process, and the thickness of the ITO layer is 40 nm.
S8 preparing a thin film sealing layer 108 on the cathode layer 107; the sealing layer 108 is made of Al2O3、TiO2、SiN、SiO2The thickness of the sealing layer 108 is 10-20 nm, in order to protect the OLED device, the material in this embodiment is Al2O3, and the thickness is 50 nm.
S9, attaching a glass cover plate 110 on the film sealing layer 105, wherein a color filter layer 109 is prefabricated on the glass cover plate 110, and the filter layer 109 comprises a red filter layer, a green filter layer and a blue filter layer. In this embodiment, the lamination alignment precision of the color filter layer 109 is 1 um.
The specific structure of the silicon-based OLED micro-display obtained by the above method is shown in fig. 4, and includes a substrate 101, an anode pixel 105, a white OLED structure layer 106, a cathode layer 107, a sealing layer 108, a color filter layer 109, a cover glass 110, and other structure layers.
The invention has the beneficial effects that: according to the silicon-based OLED micro-display prepared by nano-imprinting, the anode pixel array is prepared by using the nano-imprinting technology, the color filter layer and the glass cover plate process are completed at one time by adopting a prefabrication and laminating mode, and a photoetching process with large equipment investment is completely cancelled on a silicon-based OLED production line. Meanwhile, the nano-imprinting technology has the technical advantages of ultrahigh resolution, easiness in volume production and high consistency, and a nano-imprinted template can be repeatedly used, so that the processing cost is greatly reduced, and the processing time is effectively shortened. The preparation process of the technical method provided by the invention is simpler, the production cost is low, and the yield and the productivity can be effectively improved.
The foregoing shows and describes the general principles and broad features of the present invention and advantages thereof. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are described in the specification and illustrated only to illustrate the principle of the present invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the present invention, which fall within the scope of the invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (10)
1. A method for preparing a silicon-based OLED micro-display by nano-imprinting is characterized by comprising the following steps:
s1 providing a substrate with a prepared CMOS driving circuit;
s2 coating a photoresist on the surface of the substrate;
s3, pressing the nano-imprint template with a specific pattern structure on the photoresist at a certain pressure, and forming a microstructure corresponding to the template pattern on the photoresist after thermal curing or ultraviolet curing;
s4, removing the residual photoresist on the substrate to leave a microstructure complementary to the anode pixel pattern on the substrate;
s5 forming an anode layer on the substrate through an evaporation process;
s6 evaporating a white OLED structure layer composed of multiple OLED organic functional layers on the anode layer in sequence, wherein the white OLED structure layer comprises a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer and an electron injection layer;
s7 forming a semi-transparent metal cathode layer on the OLED structure layer;
s8, preparing a thin film sealing layer on the cathode layer;
s9 attaching a glass cover plate on the film sealing layer.
2. The method of claim 1, wherein the photoresist in step S2 is IPNR-T2000 nanoimprint photoresist from Micro Resist, germany, with a thickness of 300 nm.
3. The method of claim 1, wherein the anode layer in step S5 is made of a metal material such as aluminum (Al), or any one of Indium Tin Oxide (ITO), tin oxide (SnO2), and zinc oxide (ZnO).
4. The method of claim 1, wherein the cathode layer in step S7 is a double-layer composite structure comprising a metal layer and an ITO layer.
5. The method for nanoimprint manufacturing of silicon-based OLED microdisplays according to claim 4, wherein the metal layer is manufactured by a thermal evaporation process.
6. The method for nanoimprint manufacturing of silicon-based OLED microdisplays according to claim 4, wherein the material of the metal layer comprises a mixture of magnesium and silver, wherein the ratio of magnesium to silver is 10: 1.
7. The method for preparing the silicon-based OLED microdisplay by nanoimprint lithography according to claim 4, wherein the ITO layer is prepared by a measurement and control sputtering process.
8. The method for fabricating a silicon-based OLED microdisplay by nanoimprint lithography as claimed in claim 1, wherein the glass cover plate is pre-fabricated with a color filter layer in step S9;
the filter layers include a red filter layer, a green filter layer, and a blue filter layer.
9. The method of claim 8, wherein the color filter layer has a precision of 1um in alignment for attachment.
10. The method for preparing the silicon-based OLED microdisplay by nanoimprinting of claim 1, wherein the material of the sealing thin layer is Al2O3、TiO2、SiN、SiO2Any one or combination of the above, and the thickness of the sealing thin layer is 10-20 nm.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023035305A1 (en) * | 2021-09-13 | 2023-03-16 | Tcl华星光电技术有限公司 | Micro led device and preparation method therefor |
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| CN112201678A (en) * | 2020-09-30 | 2021-01-08 | 云南北方奥雷德光电科技股份有限公司 | High-color-saturation silicon-based OLED (organic light emitting diode) micro display and preparation method thereof |
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- 2021-04-26 CN CN202110453532.0A patent/CN113193157A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107833977A (en) * | 2017-08-23 | 2018-03-23 | 江苏集萃有机光电技术研究所有限公司 | A kind of organic light emitting display and preparation method thereof |
| CN109950416A (en) * | 2019-03-08 | 2019-06-28 | 深圳市华星光电半导体显示技术有限公司 | Production method, display panel and the electronic equipment of display panel |
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| WO2023035305A1 (en) * | 2021-09-13 | 2023-03-16 | Tcl华星光电技术有限公司 | Micro led device and preparation method therefor |
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