CN113191009B - Method and device for realizing ion array, computer storage medium and terminal - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 25
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- 238000005040 ion trap Methods 0.000 claims abstract description 31
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- 230000004888 barrier function Effects 0.000 claims description 22
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- 238000004590 computer program Methods 0.000 claims description 9
- 239000000571 coke Substances 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 13
- XOFYZVNMUHMLCC-ZPOLXVRWSA-N prednisone Chemical compound O=C1C=C[C@]2(C)[C@H]3C(=O)C[C@](C)([C@@](CC4)(O)C(=O)CO)[C@@H]4[C@@H]3CCC2=C1 XOFYZVNMUHMLCC-ZPOLXVRWSA-N 0.000 description 13
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- 238000005259 measurement Methods 0.000 description 3
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- -1 ytterbium-171 ions Chemical class 0.000 description 3
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- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
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- 238000004812 paul trap Methods 0.000 description 1
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Abstract
Disclosed herein is a method and apparatus for implementing an ion array, comprising: determining probability information of ion exchange or overall configuration change of the high-dimensional ion array along with temperature; acquiring a temperature value corresponding to the probability smaller than a preset threshold value according to the determined probability information; and determining the working environment temperature of the ion trap according to the obtained temperature value so as to enable the ion trap to obtain a high-dimensional ion array at the determined working environment temperature. According to the embodiment of the invention, the high-dimensional ion array with a stable structure is obtained in a low-temperature environment by determining the temperature at which the probability of ion exchange or overall configuration change of the high-dimensional ion array along with the temperature is less than a preset threshold value, so that technical support is provided for further application of the ion array.
Description
Technical Field
This document relates to, but is not limited to, ion trap technology, and more particularly, to a method, apparatus, computer storage medium, and terminal for implementing an ion array.
Background
A Paul trap (also called a quadrupole trap) is a technology for stably confining ions in a given spatial region by using a radio frequency electric field and an electrostatic field, and has wide and important applications in the fields of quantum computation, quantum simulation, quantum information, precision measurement and the like.
At present, the technology for trapping a one-dimensional ion chain is mature, and an ion trap of a one-dimensional ion array can stably trap dozens of ions in a normal-temperature environment and can also stably trap more than one hundred ions in a low-temperature environment. In order to further increase the number of quantum bits in the application of quantum computing, quantum simulation and quantum information fields, or to improve the measurement precision in precision measurement, it is necessary to use a high-dimensional ion array including two-dimensional and three-dimensional to stably trap hundreds of ions in an ion trap.
For a high-dimensional ion array, the stability of the high-dimensional ion array is poor in an ion trap at normal temperature, ion position exchange or overall configuration change is easy to occur when the high-dimensional ion array is collided by background gas molecules in the environment, and the high-dimensional ion array is not beneficial to application of quantum computation, quantum simulation and the like. Since the stability problem of ion position exchange or overall configuration change of a one-dimensional ion array is not significant, technicians generally set a fixed lower temperature (for example, 4 kelvin) based on experience, and then can trap more ions through a low-temperature ion trap. Because ion position exchange or overall configuration change easily occurs, how to obtain a stable high-dimensional ion array in a low-temperature environment becomes a problem to be solved.
Disclosure of Invention
The following is a summary of the subject matter described in detail herein. This summary is not intended to limit the scope of the claims.
The embodiment of the invention provides a method and a device for realizing an ion array, a computer storage medium and a terminal, which can realize the purpose of obtaining a stable high-dimensional ion array in a low-temperature environment.
The embodiment of the invention provides a method for realizing an ion array, which comprises the following steps:
determining probability information of ion exchange or overall configuration change of the high-dimensional ion array along with temperature;
acquiring a temperature value corresponding to the probability smaller than a preset threshold value according to the determined probability information;
and determining the working environment temperature of the ion trap according to the obtained temperature value so as to enable the ion trap to obtain a high-dimensional ion array at the determined working environment temperature.
In one illustrative example, the determining probability information of ion exchange or overall configuration change of the high-dimensional ion array with temperature comprises:
and calculating the probability information according to the barrier height of the high-dimensional ion array subjected to the ion exchange or the overall configuration change and the temperature of the high-dimensional ion array subjected to the ion exchange or the overall configuration change.
In one illustrative example, prior to determining the probability information that the high dimensional ion array will undergo ion exchange or change in overall configuration with temperature, the method further comprises:
determining the barrier height Δ E by numerical simulation of the high dimensional ion array motion.
In an exemplary embodiment, the obtaining a temperature value corresponding to a probability smaller than a preset threshold includes:
selecting the highest one of the temperature values corresponding to the probability smaller than the preset threshold value as the temperature value; or,
and randomly selecting one temperature value from the temperature values corresponding to the probabilities smaller than the preset threshold value within a preset range as the temperature value.
In one illustrative example, the probability information p is calculated based on the following formula:
wherein k is B Is the Boltzmann constant, k B ≈1.381×10 -23 Coke/kelvin; Δ E is the barrier height at which ion exchange or bulk configuration change occurs; t represents the temperature at which the ion exchange or the change in overall configuration occurs.
In one illustrative example, the approximate formula for the barrier height Δ E is:
where M is the mass of ions in the high dimensional ion array, M is the mass of background gas molecules causing ions in the high dimensional ion array to collide, k C Is the coulomb constant, k C ≈9.0× 10 9 Newton times meter square N.m of coulomb square fraction 2 /C 2 Is the coulomb constant, ω s Is the angular frequency of the vibration mode in which the high dimensional ion array frequency is lowest.
In one illustrative example, the high dimensional ion array comprises:
a two-dimensional ion array, and/or a three-dimensional ion array.
On the other hand, an embodiment of the present invention further provides a computer storage medium, where a computer program is stored, and when the computer program is executed by a processor, the method for implementing an ion array is implemented.
In another aspect, an embodiment of the present invention further provides a terminal, including: a memory and a processor, the memory having a computer program stored therein; wherein,
the processor is configured to execute the computer program in the memory;
the computer program, when executed by the processor, implements a method of implementing an ion array as described above.
In another aspect, an embodiment of the present invention further provides an apparatus for implementing an ion array, including: the device comprises a probability determining unit, a temperature determining unit and a processing unit; wherein,
determining the probability unit to set: determining probability information of ion exchange or overall configuration change of the high-dimensional ion array along with temperature;
the temperature determining unit is set as: acquiring a temperature value corresponding to the probability smaller than a preset threshold value according to the determined probability information;
the processing unit is configured to: and determining the working environment temperature of the ion trap according to the obtained temperature value so as to enable the ion trap to obtain a high-dimensional ion array at the determined working environment temperature.
In one illustrative example, the determining probability unit is arranged to:
and calculating the probability information according to the barrier height of the high-dimensional ion array subjected to the ion exchange or the overall configuration change and the temperature of the high-dimensional ion array subjected to the ion exchange or the overall configuration change.
In one illustrative example, the determining the temperature unit is configured to:
selecting the highest one of the temperature values corresponding to the probability smaller than the preset threshold value as the temperature value; or,
and randomly selecting one temperature value from the temperature values corresponding to the probabilities smaller than the preset threshold value within a preset range as the temperature value.
The application includes: determining probability information of ion exchange or overall configuration change of the high-dimensional ion array along with temperature; acquiring a temperature value corresponding to the probability smaller than a preset threshold value according to the determined probability information; and determining the working environment temperature of the ion trap according to the obtained temperature value so as to enable the ion trap to obtain a high-dimensional ion array at the determined working environment temperature. According to the embodiment of the invention, the high-dimensional ion array with a stable structure is obtained in a low-temperature environment by determining the temperature at which the probability of the ion exchange or the overall configuration change of the high-dimensional ion array along with the temperature is smaller than the preset threshold value, so that technical support is provided for further application of the ion array.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
The accompanying drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the example serve to explain the principles of the invention and not to limit the invention.
FIG. 1 is a flow chart of a method of implementing an ion array according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of probability information according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a high dimensional ion array according to an embodiment of the present invention;
FIG. 4 is a diagram of the results of numerical simulation output in accordance with an embodiment of the present invention;
FIG. 5 is a block diagram of an apparatus for implementing an ion array according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of an apparatus for implementing a three-dimensional ion array according to an embodiment of the present invention;
fig. 7 is a schematic diagram of an apparatus for implementing a two-dimensional ion array according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention will be described in detail below with reference to the accompanying drawings. It should be noted that the embodiments and features of the embodiments in the present application may be arbitrarily combined with each other without conflict.
The steps illustrated in the flow charts of the figures may be performed in a computer system such as a set of computer-executable instructions. Also, while a logical order is shown in the flow diagrams, in some cases, the steps shown or described may be performed in an order different than here.
Fig. 1 is a flowchart of a method for implementing an ion array according to an embodiment of the present invention, as shown in fig. 1, including:
in one illustrative example, embodiments of the invention determine probability information of ion exchange or global configuration change of a high dimensional ion array with temperature, comprising:
and calculating probability information according to the barrier height of the high-dimensional ion array subjected to ion exchange or overall configuration change and the temperature of the high-dimensional ion array subjected to ion exchange or overall configuration change.
In an exemplary embodiment, the probability information p in the embodiment of the present invention is calculated based on the following formula:
wherein k is B Is the Boltzmann constant, k B ≈1.381×10 -23 Coke/kelvin; Δ E is the barrier height at which ion exchange or bulk configuration change occurs; t represents the temperature at which ion exchange or overall configuration change occurs.
FIG. 2 is a schematic diagram of probability information according to an embodiment of the present invention, and as shown in FIG. 2, the probability p of the occurrence of ion exchange or overall configuration change shows a decreasing trend with a decrease in the ambient temperature T, and the trend corresponds to
In one illustrative example, a high dimensional ion array in an embodiment of the invention comprises:
a two-dimensional ion array, and/or a three-dimensional ion array.
102, acquiring a temperature value corresponding to the probability smaller than a preset threshold value according to the determined probability information;
in an exemplary embodiment, acquiring a temperature value corresponding to a probability smaller than a preset threshold includes:
selecting the highest one of the temperature values corresponding to the probability smaller than the preset threshold value as the temperature value; or,
and randomly selecting one temperature value from the temperature values corresponding to the probability smaller than the preset threshold value within a preset range as the temperature value.
And 103, determining the working environment temperature of the ion trap according to the obtained temperature value so as to enable the ion trap to obtain a high-dimensional ion array at the determined working environment temperature.
It should be noted that, theoretically, the smaller the temperature value in the preset range is, the higher the stability of the obtained high-dimensional ion array is, and the more the number of ions that can be contained in the array is, and when the temperature value is lower than the preset range, although the stability of the obtained high-dimensional ion array is also correspondingly improved, the number of ions that can be contained in the array is also increased, but the required temperature control cost is greatly increased, so that a reasonable one of the temperature values corresponding to the probability that is lower than the preset threshold is selected as the temperature value, and the stable high-dimensional ion array can be realized under the condition that the application environment is met.
In one illustrative example, an ion trap in an embodiment of the present invention comprises: a device for trapping a high dimensional array of ions.
The application includes: determining probability information of ion exchange or overall configuration change of the high-dimensional ion array along with temperature; acquiring a temperature value corresponding to the probability smaller than a preset threshold value according to the determined probability information; and determining the working environment temperature of the ion trap according to the obtained temperature value so as to enable the ion trap to obtain a high-dimensional ion array at the determined working environment temperature. According to the embodiment of the invention, the high-dimensional ion array with a stable structure is obtained in a low-temperature environment by determining the temperature at which the probability of ion exchange or overall configuration change of the high-dimensional ion array along with the temperature is less than a preset threshold value, so that technical support is provided for further application of the ion array.
In an exemplary embodiment, before determining probability information of ion exchange or overall configuration change of the high dimensional ion array with temperature, the method of the embodiment of the present invention further comprises:
the barrier height Δ E is determined by numerical simulation of the high dimensional ion array motion.
FIG. 3 is a schematic diagram of a high dimensional ion array according to an embodiment of the present invention, as shown in FIG. 3, the movement of the high dimensional ion array can be determined by numerical simulation; taking ytterbium-171 ions as an example, considering a three-dimensional ion array composed of 50 ytterbium-171 ions in an ion trap, the intensity of a confining potential field of the ion trap is an angular frequency omega of simple harmonic vibration in 3 spatial directions x 2 pi × 0.98 megahertz (MHz), ω y ＝2π×1.00MHz，ω z 2 pi × 1.02 MHz. The equilibrium position and the collective vibration mode of the high-dimensional ion array can be calculated by using related principles known to those skilled in the art; fig. 4 is a result diagram of numerical simulation output in the embodiment of the present invention, as shown in fig. 4, a collision between an ion and a background gas molecule in random direction and in random direction is randomly selected, a subsequent movement process of the high-dimensional ion array is calculated through numerical simulation, and whether ion exchange or overall configuration change occurs when the high-dimensional ion array reaches equilibrium again is determined; for the condition that ion exchange or overall configuration change occurs, the maximum value delta E of the total potential energy change of the high-dimensional ion array in the motion process can be calculated p . Calculating the subsequent movement of the high-dimensional ion array by randomly generating a large number of collision processes and numerical simulation, and calculating the delta E when ion exchange or overall configuration change occurs p A distribution function representing the numerical simulation output result can be obtained. Δ E in the distribution function p Is the barrier height Δ E at which ion exchange or bulk configuration change occurs. For the high-dimensional ion array of ytterbium ions shown in FIG. 3, the barrier heights Δ E-k can be determined by numerical simulation B X 10K. The environment temperature is selected to be the liquid helium temperature (about 4K), so that the probability of ion exchange or overall configuration change can be obviously reduced, and the stability of the high-dimensional ion array is improved.
In one illustrative example, the approximate formula for barrier height Δ E for embodiments of the invention is:
where M is the mass of ions in the high dimensional ion array, M is the mass of background gas molecules causing ions in the high dimensional ion array to collide, k C Is the coulomb constant, k C ≈9.0×10 9 Newton times meter square (N.m) of coulomb square fraction 2 /C 2 ) Is the coulomb constant, ω s Is the angular frequency of the vibrational mode in which the high dimensional ion array frequency is lowest.
In an exemplary embodiment, the preset threshold may be set by a person skilled in the art according to an application scenario of the high-dimensional ion array, for example, in a quantum simulation application, the preset threshold may be 10 -4 In quantum simulation applications, the preset threshold may be 10 -6 。
Fig. 5 is a block diagram of an apparatus for implementing an ion array according to an embodiment of the present invention, as shown in fig. 5, including: the device comprises a probability determining unit, a temperature determining unit and a processing unit; wherein,
determining the probability unit to set: determining probability information of ion exchange or overall configuration change of the high-dimensional ion array along with temperature;
the temperature determining unit is set as: acquiring a temperature value corresponding to the probability smaller than a preset threshold value according to the determined probability information;
the processing unit is configured to: and determining the working environment temperature of the ion trap according to the obtained temperature value so as to enable the ion trap to obtain a high-dimensional ion array at the determined working environment temperature.
In one illustrative example, an ion trap in an embodiment of the present invention comprises: a device for trapping a high dimensional array of ions.
In one illustrative example, a high dimensional ion array in an embodiment of the invention comprises:
a two-dimensional ion array, and/or a three-dimensional ion array.
In one illustrative example, embodiments of the present invention determine that the probability unit is arranged to:
and calculating probability information according to the barrier height of the high-dimensional ion array subjected to ion exchange or overall configuration change and the temperature of the high-dimensional ion array subjected to ion exchange or overall configuration change.
In an exemplary embodiment, the probability information p in the embodiment of the present invention is calculated based on the following formula:
wherein k is B Is the Boltzmann constant, k B ≈1.381×10 -23 Coke/kelvin; Δ E is the barrier height at which ion exchange or bulk configuration change occurs, and T represents the temperature at which ion exchange or bulk configuration change occurs.
In an exemplary embodiment, the apparatus of the present invention further includes a simulation unit configured to:
the barrier height Δ E is determined by numerical simulation of the high dimensional ion array motion.
In one illustrative example, the approximate formula for barrier height Δ E for an embodiment of the invention is:
where M is the mass of ions in the high dimensional ion array, M is the mass of background gas molecules causing ions in the high dimensional ion array to collide, k C Is the coulomb constant, k C ≈9.0×10 9 N·m 2 /C 2 Is the coulomb constant, ω s Is the angular frequency of the vibrational mode in which the high dimensional ion array frequency is lowest.
In an exemplary embodiment, the preset threshold may be set by a person skilled in the art according to an application scenario of the high-dimensional ion array, for example, in a quantum simulation application, the preset threshold may be 10 -4 In quantum simulation applications, the preset threshold may beIs 10 -6 。
In one illustrative example, an embodiment of the present invention determines that the temperature unit is set to:
selecting the highest one of the temperature values corresponding to the probability smaller than the preset threshold value as the temperature value; or,
and randomly selecting one temperature value from the temperature values corresponding to the probability smaller than the preset threshold value within a preset range to serve as the temperature value.
Fig. 6 is a schematic diagram of an apparatus for implementing a three-dimensional ion array according to an embodiment of the present invention, as shown in fig. 6, a dc electrode and an rf electrode for generating a high-dimensional ion array are placed in a low-temperature environment, a desired low temperature is achieved by an external refrigeration apparatus, and a three-dimensional ion array in the low-temperature environment is obtained by using a blade trap. Fig. 7 is a schematic diagram of an apparatus for implementing a two-dimensional ion array according to an embodiment of the present invention, as shown in fig. 7, a dc electrode and an rf electrode for generating a high-dimensional ion array are placed in a low temperature environment, and a required low temperature is achieved by an external refrigeration apparatus, and a two-dimensional ion array in the low temperature environment is obtained by using a chip trap. It should be noted that the above examples are only used for illustrating the embodiments of the present invention, and the embodiments of the present invention are not limited to a specific ion trap structure, nor to a specific ion array, and besides the blade trap and the chip trap, other common ion trap structures such as a three-dimensional integrated ion trap may also be used, and a two-dimensional or three-dimensional ion array may also be used in any ion trap structure.
It will be understood by those of ordinary skill in the art that all or some of the steps of the methods, systems, functional modules/units in the devices disclosed above may be implemented as software, firmware, hardware, and suitable combinations thereof. In a hardware implementation, the division between functional modules/units mentioned in the above description does not necessarily correspond to the division of physical components; for example, one physical component may have multiple functions, or one function or step may be performed by several physical components in cooperation. Some or all of the components may be implemented as software executed by a processor, such as a digital signal processor or microprocessor, or as hardware, or as an integrated circuit, such as an application specific integrated circuit. Such software may be distributed on computer readable media, which may include computer storage media (or non-transitory media) and communication media (or transitory media). The term computer storage media includes volatile and nonvolatile, removable and non-removable media implemented in any method or technology for storage of information such as computer readable instructions, data structures, program modules or other data, as is well known to those of ordinary skill in the art. Computer storage media includes, but is not limited to, RAM, ROM, EEPROM, flash memory or other memory technology, CD-ROM, Digital Versatile Disks (DVD) or other optical disk storage, magnetic cassettes, magnetic tape, magnetic disk storage or other magnetic storage devices, or any other medium which can be used to store the desired information and which can accessed by a computer. In addition, communication media typically embodies computer readable instructions, data structures, program modules or other data in a modulated data signal such as a carrier wave or other transport mechanism and includes any information delivery media as known to those skilled in the art.
Claims (8)
1. A method of implementing an ion array, comprising:
determining probability information of ion exchange or overall configuration change of the high-dimensional ion array along with temperature;
acquiring a temperature value corresponding to the probability smaller than a preset threshold value according to the determined probability information;
determining the working environment temperature of the ion trap according to the obtained temperature value so as to enable the ion trap to obtain a high-dimensional ion array at the determined working environment temperature; the method for determining the probability information of the ion exchange or the overall configuration change of the high-dimensional ion array along with the temperature comprises the following steps:
calculating the probability information according to the barrier height of the high-dimensional ion array subjected to the ion exchange or the overall configuration change and the temperature of the high-dimensional ion array subjected to the ion exchange or the overall configuration change;
before determining the probability information of ion exchange or overall configuration change of the high-dimensional ion array along with the temperature, the method further comprises the following steps:
determining the barrier height Δ E by numerical simulation of the high-dimensional ion array motion;
the probability information p is calculated and obtained based on the following formula:
wherein k is B Is the Boltzmann constant, k B ≈1.381×10 -23 Coke/kelvin; Δ E is the barrier height at which ion exchange or bulk configuration change occurs; t represents the temperature at which the ion exchange or the change in overall configuration occurs.
2. The method of claim 1, wherein obtaining a temperature value corresponding to a probability less than a predetermined threshold comprises:
selecting the highest one of the temperature values corresponding to the probabilities smaller than the preset threshold value as the temperature value; or,
and randomly selecting one temperature value from the temperature values corresponding to the probabilities smaller than the preset threshold value within a preset range as the temperature value.
3. The method of claim 1, wherein the barrier height Δ E is approximated by the formula:
where M is the mass of ions in the high dimensional ion array, M is the mass of background gas molecules causing ions in the high dimensional ion array to collide, k C Is the coulomb constant, k C ≈9.0×10 9 Newton times meter square N.m of coulomb square fraction 2 /C 2 Is the coulomb constant, ω s Is the angular frequency of the vibration mode in which the high dimensional ion array frequency is lowest.
4. The method of any one of claims 1-2, wherein the high dimensional ion array comprises:
a two-dimensional ion array, and/or a three-dimensional ion array.
5. A computer storage medium having stored thereon a computer program which, when executed by a processor, implements a method of implementing an ion array according to any of claims 1 to 4.
6. A terminal, comprising: a memory and a processor, the memory having a computer program stored therein; wherein,
the processor is configured to execute the computer program in the memory;
the computer program when executed by the processor implements a method of implementing an ion array as claimed in any one of claims 1 to 4.
7. An apparatus for implementing an ion array, comprising: the device comprises a probability determining unit, a temperature determining unit and a processing unit; wherein,
the probability determining unit is set to: determining probability information of ion exchange or overall configuration change of the high-dimensional ion array along with temperature;
the temperature determining unit is set as: acquiring a temperature value corresponding to the probability smaller than a preset threshold value according to the determined probability information;
the processing unit is configured to: determining the working environment temperature of the ion trap according to the obtained temperature value so as to enable the ion trap to obtain a high-dimensional ion array at the determined working environment temperature; wherein the determining probability unit is arranged to:
calculating the probability information according to the barrier height of the high-dimensional ion array subjected to the ion exchange or the overall configuration change and the temperature of the high-dimensional ion array subjected to the ion exchange or the overall configuration change;
the determination probability unit is further configured to: determining the barrier height Δ E by numerical simulation of the high-dimensional ion array motion;
the probability information p is calculated and obtained based on the following formula:
wherein k is B Is the Boltzmann constant, k B ≈1.381×10 -23 Coke/kelvin; Δ E is the barrier height at which ion exchange or bulk configuration change occurs; t represents the temperature at which the ion exchange or the change in overall configuration occurs.
8. The apparatus of claim 7, wherein the determine temperature unit is configured to:
selecting the highest one of the temperature values corresponding to the probability smaller than the preset threshold value as the temperature value; or,
and randomly selecting one temperature value from the temperature values corresponding to the probabilities smaller than the preset threshold value within a preset range as the temperature value.
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| CN112101561A (en) * | 2020-08-24 | 2020-12-18 | 清华大学 | Method and device for realizing quantum logic gate |
| CN112114638A (en) * | 2020-09-02 | 2020-12-22 | 清华大学 | Method and device for realizing ion cooling, computer storage medium and electronic device |
| CN112131427A (en) * | 2020-09-29 | 2020-12-25 | 北京爱论答科技有限公司 | Exercise set question acquisition method and system |
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