CN113186509A - Method for preparing lattice distortion metal nano material - Google Patents
Method for preparing lattice distortion metal nano material Download PDFInfo
- Publication number
- CN113186509A CN113186509A CN202110216699.5A CN202110216699A CN113186509A CN 113186509 A CN113186509 A CN 113186509A CN 202110216699 A CN202110216699 A CN 202110216699A CN 113186509 A CN113186509 A CN 113186509A
- Authority
- CN
- China
- Prior art keywords
- metal
- nano
- graphene
- nanoparticles
- lattice distortion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002184 metal Substances 0.000 title claims abstract description 49
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 49
- 238000000034 method Methods 0.000 title claims abstract description 38
- 239000002086 nanomaterial Substances 0.000 title claims abstract description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 39
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 39
- 239000002105 nanoparticle Substances 0.000 claims abstract description 27
- 229910003481 amorphous carbon Inorganic materials 0.000 claims abstract description 23
- 239000002082 metal nanoparticle Substances 0.000 claims abstract description 18
- 239000013078 crystal Substances 0.000 claims abstract description 16
- 238000010438 heat treatment Methods 0.000 claims abstract description 14
- 238000002844 melting Methods 0.000 claims abstract description 13
- 230000008018 melting Effects 0.000 claims abstract description 13
- 239000010931 gold Substances 0.000 claims description 46
- 239000010949 copper Substances 0.000 claims description 16
- 229910052737 gold Inorganic materials 0.000 claims description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 11
- 229910052802 copper Inorganic materials 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 4
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 claims description 3
- 238000002848 electrochemical method Methods 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 11
- 238000001816 cooling Methods 0.000 description 13
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- 239000007788 liquid Substances 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- 238000003917 TEM image Methods 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 229910021642 ultra pure water Inorganic materials 0.000 description 3
- 239000012498 ultrapure water Substances 0.000 description 3
- 229910017767 Cu—Al Inorganic materials 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 240000006409 Acacia auriculiformis Species 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910002708 Au–Cu Inorganic materials 0.000 description 1
- 229910001290 LiPF6 Inorganic materials 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- IEJIGPNLZYLLBP-UHFFFAOYSA-N dimethyl carbonate Chemical compound COC(=O)OC IEJIGPNLZYLLBP-UHFFFAOYSA-N 0.000 description 1
- 208000028659 discharge Diseases 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- BSWGGJHLVUUXTL-UHFFFAOYSA-N silver zinc Chemical compound [Zn].[Ag] BSWGGJHLVUUXTL-UHFFFAOYSA-N 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4417—Methods specially adapted for coating powder
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
The invention relates to a method for preparing a lattice distortion metal nano material; placing the nano porous metal in CH at room temperature4Covering a layer of amorphous carbon on the surface of the nano porous metal in the atmosphere for 30-60 minutes, and then heating to 100-200 ℃ above the melting point of the metal at the heating rate of 30-40 ℃/min; the amorphous carbon generates graphene at the temperature of 100-300 ℃, and then part of the nano-porous metal is melted and evaporated above the melting point; then the power is cut off directly to cool the temperature to the room temperature rapidly, and the inside of the metal nano-particles generates obvious lattice distortion to form the metal nano-particles consisting of different types of crystal grains. The surface of the metal nano-particle is bound by the graphene, so that common lattice distortion can occur in the whole nano-particle, the mechanical property of the material is improved, and the external force action is not independently appliedThe method is carried out under the condition, so that the condition is more controllable, green and energy-saving.
Description
Technical Field
The invention relates to a method for preparing a lattice distortion metal nano material in the high-temperature heating and cooling processes of the metal nano material, in particular to a method for preparing the lattice distortion metal nano material.
Background
Lattice distortion is an important deformation mode of many metal crystals, and the purpose of regulating and controlling the material performance can be achieved by changing the internal crystal structure of the metal nano material. For example, researchers have shown that orthorhombic lattice distortion of Au nanoparticles occurs at high pressure, and exposure of specific atomic crystal faces improves the catalytic performance while improving the mechanical properties. The nano crystal after lattice distortion can remarkably improve the toughness of the material, simultaneously keep the hardness and the strength of the material, improve the catalytic performance of the material and have excellent comprehensive performance. Therefore, the research on the lattice structure of the nano material is becoming a hot research point in the field of materials. However, metal nanoparticles of small size such as Au, Ag, Cu, etc. often generate phenomena such as dislocation and twinning under high temperature conditions, but it is difficult to generate general lattice distortion phenomena without external force, which creates a great obstacle to the application of excellent performance, so that it is a difficult problem how to easily and effectively induce lattice distortion.
In the conventional plastic deformation process, mechanical treatment means such as stretching, compressing, twisting and the like are mostly used to change the crystal structure of the metal material with larger size, but such a method has extremely high requirements on experimental machines and cannot cause the common lattice distortion inside the metal nanoparticles with small size, so that the excellent performance of the metal nanoparticles cannot be maximized. In addition, smaller nanoparticles are easily bound by attachments, which generally hinder the lattice distortion of the nanoparticles. Based on this, the invention of a method for preparing lattice distortion metal nano-materials is the core idea of the present patent application.
Disclosure of Invention
The invention aims to solve the problem that a metal nano material with a distorted lattice structure is not easy to form in the prior art, and provides a method for preparing a lattice distorted metal nano material.
The invention is realized by the following technical scheme:
the invention adopts the alloy sheet to prepare the nano porous metal, and then the nano porous metal is placed in CH at room temperature4And (3) heating at high temperature and cooling for solidification after 30-60 minutes in the atmosphere to form the metal nano-particles which are bound by the graphene and have distorted lattice structures.
A method for preparing lattice distortion metal nano material comprises the following steps:
(1) preparing the required nano porous metal;
(2) placing the nano-porous metal in the step (1) in CH at room temperature4Covering a layer of amorphous carbon with the thickness of 0.5-5nm on the surface of the nano porous metal in the atmosphere for 30-60 minutes, and then heating to 100-200 ℃ above the melting point of the metal at the heating rate of 30-40 ℃/min; the amorphous carbon generates graphene at the temperature of 100-300 ℃, and then part of the nano-porous metal is melted and evaporated above the melting point; then the power is cut off directly to cool the temperature to the room temperature rapidly, and the inside of the metal nano-particles generates obvious lattice distortion to form the metal nano-particles consisting of different types of crystal grains.
The common characteristic of the nanoporous metals of step (1) is the ability to pyrolyze CH4And catalyzing the amorphous carbon to generate graphene.
The nano-porous metal of the step (1) can also be obtained by a dealloying method, an electrochemical method or a template method.
The nano-porous metal in the step (1) comprises nano-porous gold, nano-porous copper or nano-porous silver.
The metal nanoparticles of step (2) comprise gold nanoparticles, copper nanoparticles or silver nanoparticles.
Placing nanoporous metal in CH4In the atmosphere, the purpose is to cover a layer of amorphous carbon on the surface of the nano porous metal, heat the nano porous metal to a temperature higher than the melting point of the metal to melt the nano porous metal, and rapidly cool the nano porous metal to solidify liquid drops into metal nano particles. Firstly, amorphous carbon is catalyzed by nano-porous metal to generate graphene, and the graphene covers the surface of the nano-porous metal. After that, part of the nanoporous metal is melted and evaporated. And then, cooling the temperature to room temperature, and instantly solidifying the metal liquid drops wrapped by the graphene when the temperature is reduced to form the metal nano-particles bound by the graphene. At this time, the metal nanoparticles are subjected to the stress action of the graphene, and obvious lattice distortion occurs, so that the metal nanoparticles composed of different types of crystal grains are formed.
The invention introduces a method for preparing a metal nano material with distorted lattice, which is a pioneer of a method for effectively generating the metal nano material with the distorted lattice structure at high temperature. The surface of the metal nano-particle is bound by the graphene, so that the general lattice distortion can occur inside the whole nano-particle, the mechanical property of the material is improved, the process can be carried out under the condition of not applying an external force action independently, and the condition is more controllable and is green and energy-saving. It is expected to provide a method of designing a nanomaterial with excellent strength and toughness, offering the possibility of widely adjusting the characteristics of metals. The preparation process is simple and has strong universality.
Drawings
FIG. 1 is a low magnification SEM topography of nanoporous gold (NPG) produced by the dealloying process of example 1;
FIG. 2 is a macroscopic TEM image of Au nanoparticles with amorphous carbon coated surface of example 1;
fig. 3 is a high power TEM image of Au nanoparticles bound by graphene of example 1;
fig. 4 is a high power TEM image of graphene-bound lattice-distorted Au nanoparticles of example 1;
FIG. 5 is a TEM diffraction pattern of G0 grains in graphene-constrained lattice-distorted Au nanoparticles of example 1;
fig. 6 is a TEM diffraction pattern of G2 grains in graphene-bound, lattice-distorted Au nanoparticles of example 1.
Detailed Description
The invention will be further explained and explained with reference to specific embodiments and the attached drawings. The embodiments are merely illustrative and not restrictive.
Example 1
(1) Preparing nano-porous gold (NPG) by using a dealloying method.
The 12Ka Au-Ag alloy thin slice with the thickness of 100nm is concentrated HNO in a constant temperature water bath at the temperature of 30 DEG C3Performing dealloying treatment in the solution for 60 minutes to corrode Ag in the solution, and cleaning the corroded slice with ultrapure water for three times to obtain the NPG material. FIG. 1 is a low-magnification SEM topography of NPG prepared by the dealloying method, and it can be seen that the prepared material is two-dimensional flaky NPG.
(2) Placing the NPG in the step (1) in CH at room temperature4The surface of NPG is covered with a layer of 5 nm-thick amorphous carbon in an atmosphere for 30 minutes, then the temperature is raised to be higher than the Au melting point (1200 ℃) at a heating rate of 30 ℃/min, the amorphous carbon is catalyzed by NPG to generate graphene at 100 ℃, and then part of NPG is melted and evaporated at 1200 ℃. And then cooling to room temperature at the speed of 1200 ℃/s, and instantly solidifying the NPG liquid drops wrapped by the graphene during cooling to form gold nanoparticles (Au NPs) bound by the graphene. Obvious lattice distortion occurs inside the Au NPs, and the Au NPs consisting of different types of crystal grains are formed.
See fig. 2, 3, 4, 5 and 6. Fig. 2 is a low power TEM image of Au nanoparticles of example 1, and it is apparent that the surface of Au NPs is covered with amorphous carbon. Fig. 3 is a high power TEM image of the Au nanoparticles bound by graphene of example 1, at which time the Au nanoparticle surface has been covered by multiple layers of graphene, demonstrating that amorphous carbon has been catalyzed to graphene. At the same time we can see that the graphene-bound Au nanoparticles have developed a crystalline structure. Fig. 4 is a high power TEM image of the Au nanoparticles with distorted lattice bound by graphene of example 1, from which we can see that the Au nanoparticles lattice is distorted to form a variety of different grain types, with G0-G7 representing different grain structures. Fig. 5 is a TEM diffraction pattern of G0 crystal grains in Au nanoparticles with distorted lattice bound by graphene of example 1, at which time it can be seen that the microstructure shows {111} crystal planes and {200} crystal planes, and the diffraction spots are connected to show the hexagonal structure of standard face-centered cubic Au. Fig. 6 is a TEM diffraction pattern of G2 grains in Au nanoparticles with distorted lattice bound by graphene of example 1, the microstructure showing the {111} crystal plane and the {200} crystal plane, the diffraction spots connecting to show a flat hexagonal structure, demonstrating that the result of graphene binding is to produce Au nanoparticles with different types of distorted lattice structures.
Example 2
(1) The nano-porous gold (NPG) is prepared by an electrochemical method.
First, the Au flakes were degreased in a 1M KOH solution, rinsed with distilled water, and dried in a vacuum oven at 100 ℃ for 1 h. In the process, the Au piece is usedWorking electrode, metal Li foil is used as auxiliary electrode and reference electrode. In a non-aqueous mixed solution of Ethylene Carbonate (EC) and dimethyl carbonate (DMC), the electrolyte is 1M LiPF6. The cell was assembled in a glove box filled with Ar gas, with exclusion of water vapor. Discharge treatment was performed at 0.05mA for 80 hours by a constant current method to form an auri alloy. The subsequent charging process was performed at 0.05mA until the electrode potential reached 3.0V, Li was removed from the AuLi alloy, and the electrode was taken out and exposed to air for 20 hours. Finally, the electrode was immersed in deionized water to remove residual Li. The resulting material was NPG.
(2) Placing the NPG in the step (1) in CH at room temperature4The surface of NPG is covered with a layer of 0.5nm thick amorphous carbon in an atmosphere for 45 minutes, then the temperature is raised to be higher than the Au melting point (1300 ℃) at the heating rate of 35 ℃/min, the amorphous carbon is catalyzed by NPG to generate graphene at 200 ℃, and then part of NPG is melted and evaporated at 1300 ℃. And then cooling to room temperature at the speed of 1300 ℃/s, and instantly solidifying the NPG liquid drops wrapped by the graphene when cooling to form gold nanoparticles (Au NPs) bound by the graphene. Obvious lattice distortion occurs inside the Au NPs, and the Au NPs consisting of different types of crystal grains are formed.
Example 3
(1) The nano-porous gold (NPG) is prepared by a template method.
Immersing the prepared porous Cu film in KAu (CN)2And performing an electric displacement reaction in the aqueous solution, depositing generated Au atoms on the surface of the porous Cu template, and converting Cu into Au after 2-hour current displacement reaction. Cu atoms diffuse from the porous Cu template into the Au structure to form an Au-Cu alloy. Finally at 0.5M H2SO 4And the electrode was subjected to cyclic potential scanning in 0.2M NaOH solution for 8 hours to remove Cu atoms in the alloy. The resulting material was NPG.
(2) Placing the NPG in the step (1) in CH at room temperature4The surface of NPG is covered with a layer of amorphous carbon with the thickness of 3nm in the atmosphere for 60 minutes, then the temperature is increased to be higher than the Au melting point (1250 ℃) at the heating rate of 40 ℃/min, the amorphous carbon is catalyzed by NPG to generate graphene at 300 ℃, and then part of NPG is melted and evaporated at 1250 ℃. Then 1250 ℃/sAnd (3) cooling to room temperature at a speed, and instantly solidifying the NPG liquid drops wrapped by the graphene when cooling to form gold nanoparticles (Au NPs) bound by the graphene. Obvious lattice distortion occurs inside the Au NPs, and the Au NPs consisting of different types of crystal grains are formed.
Example 4
(1) The Nano Porous Copper (NPC) is prepared by a dealloying method.
The Cu-Al alloy strip is put into excessive 2mol/L NaOH and then put into a constant temperature water bath at 30 ℃ for 4 hours to corrode Al component in the Cu-Al alloy strip. And pouring out the NaOH solution, adding ultrapure water and absolute ethyl alcohol, and sequentially adding for 3 times and 1 time to obtain the NPC.
(2) Placing the NPC in the step (1) in CH at room temperature4The surface of the NPC is covered with a layer of amorphous carbon with the thickness of 1nm in the atmosphere for 60 minutes, then the temperature is increased to be above the Cu melting point (1250 ℃) at the heating rate of 30 ℃/min, the amorphous carbon is catalyzed by the NPC to generate graphene during 200 ℃, and then part of the NPC is melted and evaporated at 1250 ℃. And then cooling to room temperature at the speed of 1250 ℃/s, wherein NPC liquid drops wrapped by the graphene are instantly solidified during cooling to form copper nanoparticles (Cu NPs) bound by the graphene, and the Cu NPs can also generate obvious lattice distortion.
Example 5
(1) The nano-porous silver (NPS) is prepared by a dealloying method.
Placing Ag-Zn alloy in 0.1M H2SO4Then, the mixture was put into a 30 ℃ constant temperature water bath for 1 hour to corrode the Zn component therein. Pouring out H2SO4Adding ultrapure water and absolute ethyl alcohol into the solution, and sequentially adding the solution for 3 times and 1 time to obtain the NPS.
(2) Placing the NPS in the step (1) in CH at room temperature4Covering a layer of amorphous carbon on the surface of the NPS in an atmosphere for 60 minutes, then heating to a temperature higher than the melting point of Ag (1000 ℃) at a heating rate of 30 ℃/min, catalyzing the amorphous carbon to generate graphene by the NPS at 100 ℃, and then melting and evaporating partial NPS at 1000 ℃. Cooling to room temperature at the speed of 1000 ℃/s, and instantly solidifying the NPS liquid drops wrapped by the graphene during cooling to form silver nanoparticles (Ag NPs) bound by the graphene, wherein the Ag NPs can be obviousThe lattice is distorted.
While the methods and techniques of the present invention have been described in terms of preferred embodiments, it will be apparent to those of ordinary skill in the art that variations and/or modifications of the methods and techniques described herein may be made without departing from the spirit and scope of the invention. It is expressly intended that all such similar substitutes and modifications apparent to those skilled in the art are deemed to be within the spirit, scope and content of the invention.
Claims (5)
1. A method for preparing lattice distortion metal nano material comprises the following steps:
(1) preparing nano porous metal;
(2) placing the nano-porous metal in the step (1) in CH at room temperature4Covering a layer of amorphous carbon with the thickness of 0.5-5nm on the surface of the nano porous metal in the atmosphere for 30-60 minutes, and then heating to 100-200 ℃ above the melting point of the metal at the heating rate of 30-40 ℃/min; the amorphous carbon generates graphene at the temperature of 100-300 ℃, and then part of the nano-porous metal is melted and evaporated above the melting point; then the power is cut off directly to cool the temperature to the room temperature rapidly, and the inside of the metal nano-particles generates obvious lattice distortion to form the metal nano-particles consisting of different types of crystal grains.
2. The method of claim 1, wherein the nanoporous metal of step (1) has a common characteristic of pyrolysing CH4And catalyzing the amorphous carbon to generate graphene.
3. The method according to claim 1, wherein the nanoporous metal of step (1) is obtained by a dealloying method, an electrochemical method or a templating method.
4. The method of claim 1, wherein the nanoporous metal of step (1) comprises nanoporous gold, nanoporous copper, or nanoporous silver.
5. The method of claim 1, wherein the metal nanoparticles of step (2) comprise gold nanoparticles, copper nanoparticles, or silver nanoparticles.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110216699.5A CN113186509A (en) | 2021-02-26 | 2021-02-26 | Method for preparing lattice distortion metal nano material |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110216699.5A CN113186509A (en) | 2021-02-26 | 2021-02-26 | Method for preparing lattice distortion metal nano material |
Publications (1)
Publication Number | Publication Date |
---|---|
CN113186509A true CN113186509A (en) | 2021-07-30 |
Family
ID=76973039
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202110216699.5A Pending CN113186509A (en) | 2021-02-26 | 2021-02-26 | Method for preparing lattice distortion metal nano material |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN113186509A (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4935385A (en) * | 1988-07-22 | 1990-06-19 | Xerox Corporation | Method of forming intermediate buffer films with low plastic deformation threshold using lattice mismatched heteroepitaxy |
CN111254308A (en) * | 2020-01-21 | 2020-06-09 | 天津理工大学 | Method for improving high-temperature stability of metal twin crystal |
CN111410517A (en) * | 2020-03-09 | 2020-07-14 | 西南交通大学 | Carbon nanotube and graphene synergistically enhanced aluminum oxide-based composite material and preparation method thereof |
-
2021
- 2021-02-26 CN CN202110216699.5A patent/CN113186509A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4935385A (en) * | 1988-07-22 | 1990-06-19 | Xerox Corporation | Method of forming intermediate buffer films with low plastic deformation threshold using lattice mismatched heteroepitaxy |
CN111254308A (en) * | 2020-01-21 | 2020-06-09 | 天津理工大学 | Method for improving high-temperature stability of metal twin crystal |
CN111410517A (en) * | 2020-03-09 | 2020-07-14 | 西南交通大学 | Carbon nanotube and graphene synergistically enhanced aluminum oxide-based composite material and preparation method thereof |
Non-Patent Citations (1)
Title |
---|
JIXUE LI ET AL: ""The deformation of single, nanometer-sized metal crystals in graphitic shells"", 《ADVANCED MATERIALS》 * |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
An et al. | Dealloying: An effective method for scalable fabrication of 0D, 1D, 2D, 3D materials and its application in energy storage | |
US9774033B2 (en) | Process for producing silicon nanowires directly from silicon particles | |
US9490486B2 (en) | Method for removing strongly adsorbed surfactants and capping agents from metal to facilitate their catalytic applications | |
CN104495935A (en) | Preparation method of molybdenum disulfide nanosheet in stripping manner | |
JP2019533878A (en) | Silicon: Volume change compensated silicon-silicon oxide-lithium composite with silicon nanoparticles embedded in silicon lithium silicate composite substrate, and iterative off-site manufacturing process | |
JP5877025B2 (en) | Porous silicon composite particles and method for producing the same | |
TW201206826A (en) | Submicron sized silicon powder with low oxygen content | |
US20220042195A1 (en) | Method for preparing copper-based graphene/aluminum composite wire with high electrical conductivity | |
Sun et al. | A top-down synthesis of wurtzite Cu 2 SnS 3 nanocrystals for efficient photoelectrochemical performance | |
CN114951646B (en) | One-step ultrafast preparation method of graphene material loaded by metal nanoparticles | |
JP6307317B2 (en) | Negative electrode active material for lithium ion secondary battery, method for producing the same, negative electrode and battery | |
Zhang et al. | Application of morphology and phase design of dealloying method in supercapacitor | |
WO1995023435A1 (en) | Hydrogen absorbing electrode and production method thereof | |
CN113046732B (en) | Carbon nano tube/metal composite conductor and preparation method thereof | |
CN111082035B (en) | Preparation method of sheet-graphene @ silicon @ amorphous carbon-sandwich structure composite material, and product and application thereof | |
CN113903910A (en) | Carbon cloth/cobaltosic oxide nanowire composite material and preparation method and application thereof | |
KR102309264B1 (en) | Silicon Nano-composite Structured Powders for Anode Materials and Method for Producing the Same | |
JP6376884B2 (en) | Negative electrode active material for lithium ion secondary battery, method for producing the same, negative electrode and battery | |
CN113186509A (en) | Method for preparing lattice distortion metal nano material | |
CN111254308A (en) | Method for improving high-temperature stability of metal twin crystal | |
CN111933888A (en) | Fast ion conductor solid-state lithium battery cathode with SEI and preparation method thereof | |
CA3099835A1 (en) | A method for the manufacture of reduced graphene oxide from electrode graphite scrap | |
KR101298026B1 (en) | Fabrication method of photo active layer for solar cell | |
CN113458393B (en) | Construction method of block nano porous metal | |
CN108565449B (en) | Unidirectional Cu6Sn5Nano-rod and preparation method and application thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20210730 |
|
RJ01 | Rejection of invention patent application after publication |