CN113179090A - Surface acoustic wave device and method for manufacturing the same - Google Patents
Surface acoustic wave device and method for manufacturing the same Download PDFInfo
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- CN113179090A CN113179090A CN202110501203.9A CN202110501203A CN113179090A CN 113179090 A CN113179090 A CN 113179090A CN 202110501203 A CN202110501203 A CN 202110501203A CN 113179090 A CN113179090 A CN 113179090A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 55
- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 title claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 238000000059 patterning Methods 0.000 claims description 7
- 238000011049 filling Methods 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims 2
- 239000002210 silicon-based material Substances 0.000 claims 2
- 238000004806 packaging method and process Methods 0.000 abstract description 9
- 239000000919 ceramic Substances 0.000 abstract description 2
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000005360 phosphosilicate glass Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 238000012858 packaging process Methods 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02637—Details concerning reflective or coupling arrays
- H03H9/02653—Grooves or arrays buried in the substrate
- H03H9/02661—Grooves or arrays buried in the substrate being located inside the interdigital transducers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/026—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the tuning fork type
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The invention discloses a surface acoustic wave device, comprising: a piezoelectric substrate; an interdigital transducer disposed on the piezoelectric substrate; a dielectric layer disposed on the piezoelectric substrate and not covering or at least partially covering the interdigital transducer; an inductor disposed on or in the dielectric layer; the inductor is located above the interdigital transducer and avoids the working area of the interdigital transducer. The invention also discloses a manufacturing method of the surface acoustic wave device. In the invention, the inductor is directly manufactured in the previous process without adopting LTCC (low temperature co-fired ceramic) packaging, so that the packaging cost of the surface acoustic wave device is reduced, and more choices are provided for the next process.
Description
Technical Field
The invention belongs to the technical field of surface acoustic waves, and particularly relates to a surface acoustic wave device and a manufacturing method thereof.
Background
The process of manufacturing a Surface Acoustic Wave (SAW) device in the related art is divided into a front process and a rear process. The former process is mainly the preparation of devices, and comprises the steps of depositing a piezoelectric layer, preparing an interdigital transducer (IDT) on the upper surface of the piezoelectric layer, and preparing a temperature compensation layer on the IDT during the preparation of the TC-SAW. The latter refers to the packaging of the above devices, and the packaging may be LTCC packaging (or HTCC packaging, etc.). The LTCC mainly refers to Low Temperature Co-fired Ceramic (LTCC), and the technology is an integrated component technology developed in 1982, and is currently the mainstream technology of passive integration. LTCC integrated components include various products with various active or passive components carried on or embedded in substrates, and the integrated component products include components (components), substrates (substructures), and modules (modules). LTCC encapsulation can further be with the miniaturization of circuit and high densification, is particularly suitable for being used for subassembly for high frequency communication, and in surface acoustic wave device technical field, it is provided with Inductance (IND) mainly to use on the LTCC at present, will be provided with the LTCC flip-chip mounting of inductance on the surface acoustic wave device again after the surface acoustic wave device preparation, accomplishes the encapsulation. The above process is referred to in the industry as a post-process.
However, in the related art, since the inductor is integrated into the surface acoustic wave device only in the packaging process, the manufacturing cost is high, and the selection range of the packaging process is narrow.
Disclosure of Invention
Aiming at the defects in the related technology, the invention provides the surface acoustic wave device with low manufacturing cost and wider packaging process selection range and the manufacturing method thereof.
In a first aspect, a surface acoustic wave device includes:
a piezoelectric substrate;
an interdigital transducer disposed on the piezoelectric substrate;
a dielectric layer disposed on the piezoelectric substrate and not covering or at least partially covering the interdigital transducer;
an inductor disposed on or in the dielectric layer;
the inductor is located above the interdigital transducer and avoids the working area of the interdigital transducer.
In a second aspect, a method of manufacturing a surface acoustic wave device includes the steps of:
preparing a piezoelectric substrate, and manufacturing an interdigital transducer on the piezoelectric substrate;
manufacturing a dielectric layer on the piezoelectric substrate, wherein the dielectric layer does not cover or at least partially covers the interdigital transducer;
and manufacturing an inductor on the dielectric layer in a way of avoiding the working area of the interdigital transducer, or manufacturing an inductor in the dielectric layer in a way of avoiding the working area of the interdigital transducer.
As an optimization, the manufacturing of the inductor on the dielectric layer avoiding the working area of the interdigital transducer may include the following steps:
manufacturing a first metal layer on the dielectric layer;
and patterning the first metal layer to form an inductor, wherein the inductor is positioned to avoid the working area of the interdigital transducer.
As an optimization, the manufacturing of the inductor in the dielectric layer avoiding the working area of the interdigital transducer may include the following steps:
manufacturing a groove corresponding to an inductance pattern on the dielectric layer, wherein the groove position avoids a working area of the interdigital transducer;
and filling a metal material in the groove to form an inductor.
Preferably, the inductor is arranged around the working area of the interdigital transducer.
Compared with the prior art, the invention has the following beneficial effects:
the inductor is directly manufactured in the former process, and is not packaged in the traditional latter process, so that the packaging cost of the surface acoustic wave device is reduced, and more choices are provided for the latter process. Compared with the existing surface acoustic wave device, the surface acoustic wave device has the advantages that the heat dissipation performance is improved to a certain extent, and the frequency Temperature Coefficient (TCF) is lower. In addition, compared with the inductor method for packaging in the related art, the inductor preparation method adopted in the application improves the Q value of the device to a certain extent.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic structural diagram of a surface acoustic wave device according to embodiment 1 of the present invention;
FIG. 2 is another schematic structural view of an embodiment 1 of a surface acoustic wave device according to the present invention;
FIG. 3 is a schematic top view of a structure of a working region surrounded by an inductor in embodiment 1 of the surface acoustic wave device according to the present invention;
FIG. 4 is a schematic structural diagram of a surface acoustic wave device of embodiment 2 of the present invention;
FIG. 5 is another schematic structural view of a surface acoustic wave device of embodiment 2 of the present invention;
FIG. 6 is a schematic flow chart of a method for manufacturing a surface acoustic wave device according to embodiment 3 of the present invention;
FIG. 7 is a schematic flow chart of a method for manufacturing a surface acoustic wave device according to embodiment 4 of the present invention;
FIG. 8 is a schematic flow chart of the method for manufacturing an inductor on a dielectric layer in the surface acoustic wave device of the present invention;
fig. 9 is a schematic flow chart of the process of manufacturing an inductor in a dielectric layer in the method for manufacturing a surface acoustic wave device of the present invention.
The method comprises the following steps of 1, a piezoelectric substrate; 2. an interdigital transducer; 3. a dielectric layer; 31. a temperature compensation layer; 4. an inductance.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. When the following description refers to the accompanying drawings, like numbers in different drawings represent the same or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present application. Rather, they are merely examples of apparatus and methods consistent with certain aspects of the present application, as detailed in the appended claims. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. In the description of the present application, it is to be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the present application and for simplicity in description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed in a particular orientation, and be operated in a particular manner, and are not to be construed as limiting the present application. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present application, "a plurality" means two or more unless specifically limited otherwise.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.
In this application, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may comprise direct contact of the first and second features, or may comprise contact of the first and second features not directly but through another feature in between. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature. Exemplary embodiments of the present application will be described in detail below with reference to the accompanying drawings. The features of the following examples and embodiments can be supplemented or combined with each other without conflict.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used in this application and the appended claims, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.
In a first aspect:
example 1: as shown in fig. 1 and 2, the surface acoustic wave device includes:
a piezoelectric substrate 1;
an interdigital transducer 2 disposed on the piezoelectric substrate 1;
a dielectric layer 3 disposed on the piezoelectric substrate 1 and at least partially covering the interdigital transducer 2;
an inductor 4 disposed on or in the dielectric layer 3;
the inductor 4 is located above the interdigital transducer 2 and avoids the working area of the interdigital transducer 2.
The piezoelectric substrate may be Lithium Tantalate (LT), or may be Lithium Niobate (LN), quartz, or Langasite (LGS). Fig. 1 shows the inductor disposed in the dielectric layer, and fig. 2 shows the inductor disposed on the dielectric layer. The working area of the interdigital transducer is a vibration-energy conversion area (namely, an area for realizing electro-acoustic conversion on the surface of one side of the piezoelectric substrate, which is in contact with the interdigital electrode) of the interdigital transducer. The inductor is located above the interdigital transducer, namely that the position of the inductor is higher than that of the interdigital transducer. The inductor avoiding the working area means that the position of the inductor does not vertically correspond to the position of the interdigital transducer. The inventor finds that, since the surface acoustic wave device transmits signals through acoustic wave vibration on the surface of the piezoelectric substrate, if the weight above the vibration-energy conversion region is too high, the vibration effect is not good, and the effect of the device is further adversely affected, so the design of avoiding the working region by the inductor is adopted in the embodiment.
In one embodiment, as shown in fig. 2, the dielectric layer 3 is a temperature compensation layer 31.
Among them, the TC-SAW device is in the present embodiment. The temperature compensation layer is made of a material with a positive temperature coefficient, so that the negative temperature coefficients of the piezoelectric substrate and the electrode conductive material are compensated to a certain degree.
In one embodiment, the dielectric layer 3 is made of a phosphosilicate glass (PSG) or a polysilicon (poly-Si) material.
In one embodiment, the inductor 4 is disposed around the active area of the interdigital transducer 2, as shown in fig. 3.
The inductor avoids the working area and can be generally arranged outside the working area; in this embodiment, the inductor is disposed around the working area (i.e., the inductor is spirally disposed around the working area, and the spiral shape may be a nearly circular shape or a nearly rectangular shape), so that the area can be reduced and the structure is more compact.
Example 2: as shown in fig. 4 and 5, the surface acoustic wave device includes:
a piezoelectric substrate 1;
an interdigital transducer 2 disposed on the piezoelectric substrate 1;
a dielectric layer 3 that is provided on the piezoelectric substrate 1 and does not cover the interdigital transducer 2;
an inductor 4 disposed on or in the dielectric layer 3;
the inductor 4 is located above the interdigital transducer 2 and avoids the working area of the interdigital transducer 2.
The piezoelectric substrate may be Lithium Tantalate (LT), or may be Lithium Niobate (LN), quartz, or Langasite (LGS). Fig. 1 shows the inductor disposed in the dielectric layer, and fig. 2 shows the inductor disposed on the dielectric layer. Fig. 4 shows the inductor disposed in the dielectric layer, and fig. 5 shows the inductor disposed on the dielectric layer. The inductor is located above the interdigital transducer, namely that the position of the inductor is higher than that of the interdigital transducer. The inductor avoiding the working area means that the position of the inductor does not vertically correspond to the position of the interdigital transducer.
In one embodiment, as shown in fig. 5, a temperature compensation layer 31 may be further included, which is disposed on the piezoelectric substrate 1 and covers at least a portion of the interdigital transducer 2.
Among them, the TC-SAW device is in the present embodiment. The temperature compensation layer is made of a material with a positive temperature coefficient, so that the negative temperature coefficients of the piezoelectric substrate and the electrode conductive material are compensated to a certain degree. The temperature compensation layer covers the interdigital transducer and can not be overlapped with the dielectric layer.
In one embodiment, the dielectric layer 3 is made of a phosphosilicate glass (PSG) or a polysilicon (poly-Si) material.
In one embodiment, the inductor 4 is disposed around the active area of the interdigital transducer 2.
The inductor is manufactured in the previous process, and the inductor is not packaged in the next process, so that the packaging cost of the surface acoustic wave device is reduced to a certain extent, and more choices are provided for the next process. Compared with the scheme that the inductor and the surface acoustic wave device are arranged on the same plane in the related technology, the scheme in the application has the advantages of smaller occupied area and more compact structure. In addition, to a certain extent, the heat dissipation performance of the device is also improved to a certain extent. In addition, the Q value of the device prepared in the application is improved to a certain extent compared with the device packaged in the related art. The technical scheme can be applied to various surface acoustic wave devices, such as filters or duplexers. The inventive concept of inductance avoiding the vibration-energy conversion region in this application can also be applied to Bulk Acoustic Wave (BAW) filters, in addition to surface acoustic wave devices.
In a second aspect:
example 3: as shown in fig. 1, 2 and 6, the method for manufacturing a surface acoustic wave device includes the following steps:
preparing a piezoelectric substrate 1, and manufacturing an interdigital transducer 2 on the piezoelectric substrate 1;
manufacturing a dielectric layer 3 on the piezoelectric substrate 1, wherein the dielectric layer 3 at least partially covers the interdigital transducer 2;
an inductor 4 is formed on the dielectric layer 3 to avoid the working area of the interdigital transducer 2 (as shown in fig. 2), or an inductor 4 is formed in the dielectric layer 3 to avoid the working area of the interdigital transducer 2 (as shown in fig. 1).
The manufacturing of the interdigital transducer specifically comprises the steps of preparing a metal coating on a piezoelectric substrate, and patterning the metal coating to form an interdigital electrode; the patterning may be a general semiconductor etching process, and the width of the interdigital electrode may be preset as needed, which is not limited herein. The working area of the interdigital transducer is the vibration-energy conversion area of the interdigital transducer. The inductor avoiding the working area means that the position of the inductor does not correspond to the working area.
In one embodiment, the dielectric layer 3 is a temperature compensation layer 31.
Example 4: as shown in fig. 4, 5 and 7, the method for manufacturing a surface acoustic wave device includes the following steps:
preparing a piezoelectric substrate 1, and manufacturing an interdigital transducer 2 on the piezoelectric substrate 1;
manufacturing a dielectric layer 3 on the piezoelectric substrate 1, wherein the dielectric layer 3 does not cover the interdigital transducer 2;
an inductor 4 is formed on the dielectric layer 3 to avoid the working area of the interdigital transducer 2 (as shown in fig. 5), or an inductor 4 is formed in the dielectric layer 3 to avoid the working area of the interdigital transducer 2 (as shown in fig. 4).
The manufacturing of the interdigital transducer specifically comprises the steps of preparing a metal coating on a piezoelectric substrate, and patterning the metal coating to form an interdigital electrode; the patterning may be a general semiconductor etching process, and the width of the interdigital electrode may be preset as needed, which is not limited herein. The working area of the interdigital transducer is the vibration-energy conversion area of the interdigital transducer. The inductor avoiding the working area means that the position of the inductor does not correspond to the working area.
In one embodiment, after the interdigital transducer is manufactured and before the inductor is manufactured, the method further includes the following steps:
and manufacturing a temperature compensation layer 31 on the piezoelectric substrate 1, wherein the temperature compensation layer 31 at least covers a part of the interdigital transducer.
As shown in fig. 5, the temperature compensation layer covers the interdigital transducer and may not overlap with the dielectric layer.
For the above embodiments 3 and 4, the following optimized embodiments may also be included:
in one embodiment, as shown in fig. 8, the step of forming the inductor 4 on the dielectric layer 3 and avoiding the working area of the interdigital transducer 2 may include the following steps:
manufacturing a first metal layer on the dielectric layer;
and patterning the first metal layer to form an inductor, wherein the inductor is positioned to avoid the working area of the interdigital transducer.
The present embodiment is an alternative manufacturing method corresponding to the structure shown in fig. 2 and 5. It is understood that the manufacturing method of the inductor is not limited to the method proposed in this embodiment, as long as the inductor avoiding the working area of the interdigital transducer can be obtained. In addition, after the inductor is formed, a dielectric layer for protecting the inductor can be further manufactured on the dielectric layer, and the manufacturing material of the dielectric layer can be the same as or different from that of the dielectric layer, which is equivalent to obtaining an alternative scheme for manufacturing the inductor in the dielectric layer.
In one embodiment, as shown in fig. 9, the step of forming the inductor 4 in the dielectric layer 3 avoiding the active area of the interdigital transducer 2 may include the following steps:
manufacturing a groove corresponding to an inductance pattern on the dielectric layer, wherein the groove position avoids a working area of the interdigital transducer;
and filling a metal material in the groove to form an inductor. The thickness of the inductor can be adjusted by planarization, thinning and other processes.
The present embodiment is an alternative manufacturing method corresponding to the structure shown in fig. 1 and fig. 4. It is understood that the manufacturing method of the inductor is not limited to the method proposed in this embodiment, as long as the inductor avoiding the working area of the interdigital transducer can be obtained.
In one embodiment, the dielectric layer 3 is made of a phosphosilicate glass (PSG) or a polysilicon (poly-Si) material.
In one embodiment, the inductor 4 is disposed around the active area of the interdigital transducer 2, as shown in fig. 3.
In this embodiment, the inductor is disposed around the working area (i.e., the inductor is spirally disposed around the working area, and the spiral shape may be a nearly circular shape or a nearly rectangular shape), so that the area can be reduced and the structure is more compact.
The technical features of the above embodiments can be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the above embodiments are not described, but should be considered as the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above examples are merely illustrative of several embodiments of the present invention, and the description thereof is more specific and detailed, but not to be construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the appended claims.
Claims (10)
1. A surface acoustic wave device, comprising:
a piezoelectric substrate;
an interdigital transducer disposed on the piezoelectric substrate;
a dielectric layer disposed on the piezoelectric substrate and at least partially covering the interdigital transducer;
an inductor disposed on or in the dielectric layer;
the inductor is located above the interdigital transducer and avoids the working area of the interdigital transducer.
2. A surface acoustic wave device, comprising:
a piezoelectric substrate;
an interdigital transducer disposed on the piezoelectric substrate;
a dielectric layer disposed on the piezoelectric substrate and not covering the interdigital transducer;
an inductor disposed on or in the dielectric layer;
the inductor is located above the interdigital transducer and avoids the working area of the interdigital transducer.
3. A surface acoustic wave device as set forth in claim 2, further comprising:
and the temperature compensation layer is arranged on the piezoelectric substrate and at least covers one part of the interdigital transducer.
4. A surface acoustic wave device according to any one of claims 1 to 3, wherein:
the dielectric layer is made of phosphorosilicate glass or polycrystalline silicon material; or
The inductor is disposed around a working area of the interdigital transducer.
5. A method for manufacturing a surface acoustic wave device, comprising the steps of:
preparing a piezoelectric substrate, and manufacturing an interdigital transducer on the piezoelectric substrate;
manufacturing a dielectric layer on the piezoelectric substrate, wherein the dielectric layer at least partially covers the interdigital transducer;
and manufacturing an inductor on the dielectric layer in a way of avoiding the working area of the interdigital transducer, or manufacturing an inductor in the dielectric layer in a way of avoiding the working area of the interdigital transducer.
6. A method for manufacturing a surface acoustic wave device, comprising the steps of:
preparing a piezoelectric substrate, and manufacturing an interdigital transducer on the piezoelectric substrate;
manufacturing a dielectric layer on the piezoelectric substrate, wherein the dielectric layer does not cover the interdigital transducer;
and manufacturing an inductor on the dielectric layer in a way of avoiding the working area of the interdigital transducer, or manufacturing an inductor in the dielectric layer in a way of avoiding the working area of the interdigital transducer.
7. A surface acoustic wave device manufacturing method as set forth in any of claims 5 to 6, wherein said forming an inductance on said dielectric layer while avoiding a working area of said interdigital transducer comprises the steps of:
manufacturing a first metal layer on the dielectric layer;
and patterning the first metal layer to form an inductor, wherein the inductor is positioned to avoid the working area of the interdigital transducer.
8. A surface acoustic wave device manufacturing method as set forth in any one of claims 5 to 6, wherein said forming an inductance in said dielectric layer avoiding a working area of said interdigital transducer comprises the steps of:
manufacturing a groove corresponding to an inductance pattern on the dielectric layer, wherein the groove position avoids a working area of the interdigital transducer;
and filling a metal material in the groove to form an inductor.
9. A surface acoustic wave device manufacturing method as set forth in any one of claims 5 to 6, wherein:
the dielectric layer is made of phosphorosilicate glass or polycrystalline silicon material; or
The inductor is disposed around a working area of the interdigital transducer.
10. The surface acoustic wave device according to claim 1 or the surface acoustic wave device manufacturing method according to claim 5, characterized in that:
the dielectric layer is a temperature compensation layer.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108692824A (en) * | 2018-03-21 | 2018-10-23 | 中电科技德清华莹电子有限公司 | A kind of passive wireless acoustic surface wave temperature sensor |
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