CN113161856A - 1.6-micrometer injection locking solid laser based on double-pyramid resonant cavity and generation method - Google Patents
1.6-micrometer injection locking solid laser based on double-pyramid resonant cavity and generation method Download PDFInfo
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Abstract
The invention relates to a 1.6 mu m injection locking solid laser based on a double-pyramid resonant cavity and a generation method thereof, wherein a non-planar annular cavity provides seed laser, the resonant cavity is formed by two pyramid prisms, a compensation lens is adopted to compensate the stability of the double-pyramid laser, an acousto-optic Q switch is adopted as a Q-switching element, a half wave plate is adopted to adjust the output power of the double-pyramid laser, a double-wedge mirror adhered with piezoelectric ceramics is adopted to adjust the cavity length of the double-pyramid laser and further match the resonant frequency of 1.6 mu m single-frequency continuous seed laser, a resonant signal is fed back to a control circuit by an InGaAs detector, and the control circuit controls the acousto-optic Q switch to complete the injection of the seed light, thereby realizing the output of the single-frequency high-energy 1.6 mu m pulse laser. The invention adopts the double-pyramid laser to carry out injection locking, utilizes the reflection characteristic of the pyramid prism to enhance the stability of the resonant cavity and avoid the environmental interference, and can ensure the anti-detuning characteristic of the laser resonant cavity.
Description
Technical Field
The invention belongs to the technical field of lasers, and particularly relates to a 1.6-micrometer injection locking solid laser based on a double-pyramid resonant cavity and a generation method.
Background
Because the 1.6 μm laser is located in the atmospheric transmission window, and the receiver device thereof is developed more mature, the safety threshold of human eyes is 10 times higher than that of the 2 μm laser. Therefore, the single-frequency and large-energy 1.6-micron pulse laser has extremely important application in the fields of coherent Doppler wind-finding radar, differential absorption laser radar, laser imaging radar and the like.
At present, injection locking technology is mainly adopted for realizing single-frequency and large-energy pulse laser output. The working principle of the injection locking technology is that single-frequency narrow-linewidth seed laser is injected into a slave laser with higher output power, so that narrow-linewidth high-power laser output is realized, and the injection locking technology is suitable for coherent laser radar application.
However, the secondary laser is easily detuned due to the influence of factors such as vibration, ambient temperature change, air interference, etc., and the detuning can significantly affect the stable operation of the secondary laser, and the primary reason for the detuning of the secondary laser is that the intracavity oscillation light deviates out of the cavity due to the modulation influence of the inclination angle of the normal line of the cavity mirror, and the detuning angle of the cavity mirror reaches the order of angular seconds, which can cause the unstable output mode of the laser and the reduction of the output energy, so that the 1.6 μm single-frequency pulse laser cannot stably work in various applications for a long time. Therefore, how to improve the anti-detuning capability of the 1.6 μm single-frequency solid-state laser becomes a research focus for realizing the engineering application of the single-frequency 1.6 μm laser.
Disclosure of Invention
The invention aims to improve the detuning resistance of a single-frequency and large-energy 1.6 mu m solid laser. The invention provides a 1.6 mu m injection locking solid laser based on a double-pyramid resonant cavity, which has the characteristics of single frequency, large energy, strong anti-detuning capability, long-time stable operation and the like by combining the characteristics of the pyramid resonant cavity such as detuning resistance, strong stability and the like.
The invention is realized by the following technical scheme:
the 1.6 mu m injection locking solid laser based on the double-pyramid resonant cavity comprises a 1.6 mu m single-frequency continuous seed laser source, a double-pyramid laser, an InGaAs detector and a control circuit;
the double-pyramid laser includes: a double-pyramid laser pumping source; the ring-shaped resonant cavity is formed by a first pyramid prism and a second pyramid prism which are oppositely arranged in parallel on the bottom surface, two parallel light paths are arranged in the ring-shaped resonant cavity, the first light path sequentially comprises a half wave plate, a first polaroid, Er, YAG crystal and a second polaroid, and the first polaroid and the second polaroid are symmetrically inclined by 45 degrees; the second light path sequentially comprises an acousto-optic Q switch, a compensation lens, a double wedge mirror and a resonance signal taking mirror;
the optical path emitted by the pumping source of the double-pyramid laser is vertical to a first optical path in the annular resonant cavity, enters a first polaroid and is reflected to the center of an Er, namely a YAG crystal through the first polaroid;
the double wedge mirror is provided with piezoelectric ceramics; an InGaAs detector is arranged on a reflection light path of the resonance signal mirror; the InGaAs detector is connected with a control circuit, and the control circuit controls and connects the piezoelectric ceramic and the acousto-optic Q switch respectively;
a 1.6 μm single-frequency continuous-seed laser source is obtained using a non-planar ring cavity (NPRO) structure and injected into the first polarizer of a double-pyramid laser via a mirror 14.
The side, facing the Er, of the first polaroid is a front side, a film system on the front side is high-reflection for pump light of 1.5 mu m and high-transmission for output laser light of 1.6 mu m, the other side of the first polaroid is a back side, and a film system on the back side is high-reflection for vertical polarized light of 1.6 mu m and high-transmission for horizontal polarized light of 1.6 mu m; the light path emitted by the pumping source of the double-pyramid laser is incident to the front surface of the first polaroid, and the light path of the 1.6 mu m single-frequency continuous seed laser source enters the back surface of the first polaroid; the coating parameters of the second polaroid are symmetrical to those of the first polaroid.
The length of the Er: YAG crystal is 40mm, the cross section size is 1.7 x 5.5mm, the doping concentration of the crystal is 0.5%, and both ends of the Er: YAG crystal are plated with a high-permeability film of 1.5 μm and 1.6 μm.
The radio frequency power of the acousto-optic Q switch is 20W, and the material is fused quartz.
The first pyramid prism and the second pyramid prism have the same structure, the diameter is 40mm, the height is 35mm, the material is fused quartz, and the incident surface is plated with a high-transmission film with the thickness of 1.5 mu m and 1.6 mu m.
The generation method of the 1.6 mu m injection locking solid laser based on the double-pyramid resonant cavity comprises the steps of providing seed laser by a non-planar annular cavity (NPRO), forming the resonant cavity by two pyramid prisms, compensating the stability of the double-pyramid laser by using a compensating lens, using an acousto-optic Q switch as a Q-switching element, adjusting the output power of the double-pyramid laser by using a half wave plate, adjusting the cavity length of the double-pyramid laser by using a double-wedge mirror adhered with piezoelectric ceramics, matching the resonant frequency of 1.6 mu m single-frequency continuous seed laser, feeding a resonant signal back to a control circuit by an InGaAs detector, and controlling the acousto-optic Q switch to complete seed light injection by the control circuit, thereby realizing single-frequency high-energy 1.6 mu m pulse laser output.
The specific generation method is that the light emitted by the double-pyramid laser pumping source is incident to the first polaroid and is reflected by the first polaroid, and the light emitted by the double-pyramid laser pumping source is reflected to the center of Er, namely YAG crystal; YAG crystal under the pumping of the double-pyramid laser, two ends respectively generate 1645nm laser with opposite directions, and the two 1645nm laser are both on the first light path in the annular resonant cavity and respectively enter the first polaroid and the second polaroid;
under the injection of a 1.6 mu m single-frequency continuous seed laser source, a 1.6 mu m single-frequency continuous seed laser mode in the double-pyramid laser device is dominant, and the double-pyramid laser device realizes the operation of single-direction 1645nm laser with the same operation direction as the 1.6 mu m single-frequency continuous seed laser, namely the same operation direction of the single-direction 1645nm laser is incident to the first polaroid; the 1645nm laser which enters the first polaroid and runs in the direction is transmitted to a half-wave plate through the first polaroid, and the half-wave plate is used for adjusting the power of the injected 1.6 mu m single-frequency continuous seed laser and adjusting the output power of the double-pyramid laser; the light beam reaches the first pyramid prism after being adjusted by the half wave plate, and is totally reflected for three times in the first pyramid prism; the laser beam enters a second light path in the annular resonant cavity after being totally reflected and firstly reaches an acousto-optic Q switch, and the acousto-optic Q switch is used for realizing the output of single-frequency pulse light after injection locking in cooperation with the opening and the closing of a single-frequency continuous seed laser source signal of 1.6 mu m; after being transmitted by the acousto-optic Q switch, the 1645nm laser is transmitted by the compensation lens, and the compensation lens has the function of ensuring the stable operation of the double-pyramid laser; the piezoelectric ceramic is transmitted through a double-wedge mirror adhered with the piezoelectric ceramic, the piezoelectric ceramic is driven by periodically-changed sawtooth wave voltage, so that the thickness of the piezoelectric ceramic is periodically changed, the cavity length of the double-cone laser is periodically changed, the inherent frequency of the double-cone laser is periodically changed, when the frequency of the injected 1.6 mu m single-frequency continuous seed laser is the same as the inherent frequency of the double-cone laser, the injected single-frequency continuous seed laser interferes with the double-cone laser, an interference signal is reflected by a resonance signal mirror, enters an InGaAs detector and is fed back to a control circuit, and the control circuit controls the acousto-optic Q switch to work; after being reflected by the second pyramid prism, the laser enters the first light path in the annular resonant cavity, and is reflected by the second polaroid to realize single-frequency and high-energy laser output.
The double-pyramid laser can effectively avoid the detuning of the resonant cavity caused by factors such as vibration, environmental interference and the like, thereby influencing the stable operation of the resonant cavity. Because the laser which is incident into the pyramid prism at any angle in space can be reversely output by parallel incident light, no matter what detuning occurs to the pyramid prism, an oscillation light path in the resonant cavity is always kept unchanged, the volume of a laser mode can not be changed, and the output laser cannot be influenced.
The invention has the following beneficial effects:
the invention adopts the double-pyramid laser to carry out injection locking, utilizes the reflection characteristic of the pyramid prism to enhance the stability of the resonant cavity and avoid the environmental interference, and can ensure the anti-detuning characteristic of the laser resonant cavity.
Drawings
FIG. 1 is a schematic structural diagram of the present invention.
FIG. 2 is a schematic diagram of three total reflections of 1645 μm laser light in a corner cube prism.
Detailed Description
The specific technical scheme of the invention is described by combining the drawings and the embodiment.
As shown in fig. 1, the 1.6 μm injection locking solid-state laser based on the double-pyramid resonant cavity comprises a 1.6 μm single-frequency continuous seed laser source 15, a double-pyramid laser, an InGaAs detector 8 and a control circuit 9;
the double-pyramid laser includes: a double-pyramid laser pumping source 16; the ring-shaped resonant cavity is formed by a first pyramid prism 1 and a second pyramid prism 2 which are oppositely arranged in parallel on the bottom surface, two parallel light paths are arranged in the ring-shaped resonant cavity, the first light path sequentially comprises a half-wave plate 3, a first polaroid 4, Er, a YAG crystal 5 and a second polaroid 6, and the first polaroid 4 and the second polaroid 6 are symmetrically inclined by 45 degrees; the second light path sequentially comprises an acousto-optic Q switch 13, a compensation lens 12, a double-wedge mirror 10 and a resonance signal taking mirror 7;
the optical path emitted by the double-pyramid laser pumping source 16 is vertical to the first optical path in the annular resonant cavity, enters the first polaroid 4, and is reflected to the center of the Er, namely YAG crystal 5 through the first polaroid 4;
the double wedge mirror 10 is provided with piezoelectric ceramics (PZT) 11; an InGaAs detector 8 is arranged on a reflection light path of the resonance signal mirror 7; the InGaAs detector 8 is connected with a control circuit 9, and the control circuit 9 is respectively connected with a piezoelectric ceramic (PZT)11 and an acousto-optic Q switch 13 in a control mode;
a 1.6 μm single-frequency continuous seed laser source 15 is obtained using a non-planar ring cavity (NPRO) configuration and injected into the first polarizer 4 of the double-pyramid laser via a mirror 14.
The side, facing the Er, of the first polaroid 4, facing the Er, of the YAG crystal 5 is a front side, a film system on the front side is high-reflection for pump light of 1.5 mu m and high-transmission for output laser light of 1.6 mu m, the other side of the first polaroid 4 is a back side, and a film system on the back side is high-reflection for vertical polarized light of 1.6 mu m and high-transmission for horizontal polarized light of 1.6 mu m; the light path emitted by the double-pyramid laser pumping source 16 is incident on the front surface of the first polaroid 4, and the light path of the 1.6 mu m single-frequency continuous seed laser source 15 enters the back surface of the first polaroid 4; the coating parameters of the second polaroid 6 are symmetrical to those of the first polaroid 4.
The length of the Er: YAG crystal 5 is 40mm, the cross section size is 1.7 x 5.5mm, the doping concentration of the crystal is 0.5 percent, and both ends of the Er: YAG crystal 5 are plated with a high-permeability film of 1.5 mu m and 1.6 mu m.
The radio frequency power of the acousto-optic Q-switch 13 is 20W, and the material is fused quartz.
The first pyramid prism 1 and the second pyramid prism 2 have the same structure, the diameter is 40mm, the height is 35mm, the material is 'Corning 7979' fused quartz, and the incident surface is plated with high-permeability films of 1.5 mu m and 1.6 mu m.
A method for generating a 1.6 mu m injection locking solid laser based on a double-pyramid resonant cavity comprises the steps of providing seed laser by a non-planar annular cavity (NPRO), forming the resonant cavity by two pyramid prisms, compensating the stability of the double-pyramid laser by a compensating lens, using an acousto-optic Q switch 13 as a Q-switching element, adjusting the output power of the double-pyramid laser by a half wave plate 3, adjusting the cavity length of the double-pyramid laser by a double-wedge mirror 10 adhered with piezoelectric ceramics (PZT)11, matching the resonant frequency of 1.6 mu m single-frequency continuous seed laser, feeding a resonant signal back to a control circuit 9 by an InGaAs detector 8, and controlling the acousto-optic Q switch 13 by the control circuit 9 to complete seed light injection, thereby realizing single-frequency high-energy 1.6 mu m pulse laser output.
Wherein the seed laser is a 1.6 μm single-frequency continuous seed laser source 15, and the slave laser is a double-pyramid laser.
As shown in FIG. 1, the optical path a of the double-pyramid laser pumping source 16 is incident on the first polarizer 4 at an angle of 45 degrees, and the first polarizer 4 reflects the double-pyramid laser pumping source to the center of the Er: YAG crystal 5. The second polaroid 6 reflects pump light which is not absorbed by the Er: YAG crystal 5 out of the cavity, the coating parameters of the second polaroid 6 are the same as those of the first polaroid 4, the Er: YAG crystal 5 generates laser with the wavelength of 1645nm under the pumping of a double-pyramid laser pumping source, the laser oscillates towards two directions of b and c simultaneously, and under the injection of a light path of a 1.6 mu m single-frequency continuous seed laser source 15 generated by a non-planar ring cavity (NPRO), the single-frequency continuous seed laser mode in the double-pyramid laser is dominant, so that the double-pyramid laser realizes the laser operation in the direction of b, which is the same as the operation direction of the 1.6 mu m single-frequency continuous seed laser.
1645nm laser generated by the double-cone laser transmits to the half wave plate 3 through the first polaroid 4, and the power of the injected 1.6 mu m single-frequency continuous seed laser source 15 is adjusted and the output power of the resonant cavity is changed by adjusting the included angle between the half wave plate 3 and the optical axis; 1645nm laser generated by the double-pyramid laser is transmitted by the half wave plate 3, the emergent light reaches the first pyramid prism 1, and reaches the acousto-optic Q switch after three times of total reflection in the first pyramid prism 1, and the schematic diagram of the three times of total reflection is shown in fig. 2.
The 1645nm laser reaches the compensating lens 12 after being transmitted by the acousto-optic Q switch, the focal length of the compensating lens 12 is 100mm, the compensating lens and the Er, namely the YAG crystal 5 are symmetrically arranged around the resonant cavity, and the compensating lens 12 is used for ensuring the stable operation of the double-pyramid laser; the double-wedge mirror 10 adhered with piezoelectric ceramics (PZT)11 is used for controlling the change of the cavity length of the double-cone laser, so that the double-cone laser has periodically changed resonant frequency, when the resonant frequency of the double-cone laser is the same as the frequency of injected single-frequency continuous seed laser with 1.6 mu m, the double-cone laser obtains a frequency locking signal, the frequency locking signal is detected by the InGaAs detector 8 after being reflected by the resonance signal taking mirror 7, the InGaAs detector 8 is connected with an analog signal amplifier to amplify the frequency locking signal, then the amplified voltage signal is input to a comparator in the control circuit 9, and through setting a proper comparison level, when the detected voltage signal is greater than the comparison level, the acousto-optic Q switch 13 is opened, so that single-frequency high-energy pulse laser is output.
Claims (7)
1. The 1.6 mu m injection locking solid laser based on the double-pyramid resonant cavity is characterized by comprising a 1.6 mu m single-frequency continuous seed laser source (15), a double-pyramid laser, an InGaAs detector (8) and a control circuit (9);
the double-pyramid laser includes: a double-pyramid laser pumping source (16); the ring-shaped resonant cavity is formed by a first pyramid prism (1) and a second pyramid prism (2) which are oppositely arranged in parallel on the bottom surface, two parallel light paths are arranged in the ring-shaped resonant cavity, the first light path sequentially comprises a half-wave plate (3), a first polaroid (4), an Er, a YAG crystal (5) and a second polaroid (6), and the first polaroid (4) and the second polaroid (6) are symmetrically inclined by 45 degrees; the second light path sequentially comprises an acousto-optic Q switch (13), a compensation lens (12), a double-wedge mirror (10) and a resonance signal taking mirror (7);
a light path emitted by a pumping source (16) of the double-pyramid laser is vertical to a first light path in the annular resonant cavity, enters a first polaroid (4), and is reflected to the center of an Er: YAG crystal (5) through the first polaroid (4);
the double wedge mirror (10) is provided with piezoelectric ceramics (11); an InGaAs detector (8) is arranged on a reflection light path of the resonance signal taking mirror (7); the InGaAs detector (8) is connected with a control circuit (9), and the control circuit (9) is respectively connected with the piezoelectric ceramic (11) and the acousto-optic Q switch (13) in a control mode;
a1.6 mu m single-frequency continuous seed laser source (15) is obtained by using a non-planar ring cavity structure and is injected into a first polarizer (4) of a double-pyramid laser through a reflector (14).
2. The 1.6 μm injection-locked solid-state laser based on the double-pyramid resonant cavity according to claim 1, wherein the first polarizer (4) faces to one side of the Er: YAG crystal (5) and is a front side, the film system of the front side is high-reflection to 1.5 μm pump light and high-transmission to 1.6 μm output laser light, the other side of the first polarizer (4) is a back side, and the film system of the back side is high-reflection to 1.6 μm vertical polarized light and high-transmission to 1.6 μm horizontal polarized light; a light path emitted by a pumping source (16) of the double-pyramid laser is incident to the front surface of the first polaroid (4), and a light path of a 1.6 mu m single-frequency continuous seed laser source (15) enters the back surface of the first polaroid (4); the coating parameters of the second polaroid (6) are symmetrical to those of the first polaroid (4).
3. The twin-pyramid resonator-based 1.6 μm injection-locked solid-state laser according to claim 1, wherein the length of the Er: YAG crystal (5) is 40mm, the cross-sectional dimension is 1.7 x 5.5mm, the crystal doping concentration is 0.5%, and both ends of the Er: YAG crystal (5) are coated with a high-transmission film of 1.5 μm and 1.6 μm.
4. The twin-pyramid resonator-based 1.6 μm injection-locked solid-state laser according to claim 1, wherein the acousto-optic Q-switch (13) has a rf power of 20W and is made of fused silica.
5. The twin-pyramid resonator-based 1.6 μm injection-locked solid-state laser according to claim 1, wherein the first pyramid prism (1) and the second pyramid prism (2) have the same structure, a diameter of 40mm and a height of 35mm, are made of fused silica, and have incident surfaces coated with a high-permeability film of 1.5 μm and 1.6 μm.
6. A method for generating a 1.6 μm injection-locked solid state laser based on a double-pyramid resonant cavity according to any one of claims 1 to 5, comprising the steps of: seed laser is provided by a non-planar ring cavity, a resonant cavity is formed by two pyramid prisms, the stability of a double pyramid laser is compensated by a compensation lens, an acousto-optic Q switch (13) is used as a Q-switching element, the output power of the double pyramid laser is adjusted by a half wave plate (3), the cavity length of the double pyramid laser is adjusted by a double wedge mirror (10) adhered with piezoelectric ceramics (11), and further matched with the resonant frequency of 1.6 mu m single-frequency continuous seed laser, a resonant signal is fed back to a control circuit (9) by an InGaAs detector (8), the control circuit (9) controls the acousto-optic Q switch (13) to complete seed light injection, and therefore single-frequency high-energy 1.6 mu m pulse laser output is achieved.
7. The method for generating a 1.6 μm injection-locked solid-state laser based on a double-pyramid resonant cavity according to claim 6, comprising the following steps: the light emitted by the double-pyramid laser pumping source (16) enters a first polaroid (4) and is reflected by the first polaroid (4), and the light emitted by the double-pyramid laser pumping source (16) is reflected to the center of an Er: YAG crystal (5); YAG crystal (5) is pumped by a double-pyramid laser pumping source (16), two ends of the crystal respectively generate 1645nm laser with opposite directions, and the two 1645nm lasers are both arranged on a first optical path in the annular resonant cavity and respectively enter a first polaroid (4) and a second polaroid (6);
under the injection of a 1.6 mu m single-frequency continuous seed laser source (15), a 1.6 mu m single-frequency continuous seed laser mode in the double-pyramid laser device is dominant, and the double-pyramid laser device realizes the operation of single-direction 1645nm laser with the same operation direction as the 1.6 mu m single-frequency continuous seed laser, namely the direction of incidence to the first polaroid (4); 1645nm laser which enters the first polaroid (4) and runs in the direction is transmitted to the half-wave plate (3) through the first polaroid (4), and the half-wave plate (3) is used for adjusting the power of the injected 1.6 mu m single-frequency continuous seed laser and adjusting the output power of the double-pyramid laser; the light beam reaches the first pyramid prism (1) after being adjusted by the half wave plate (3), and is totally reflected for three times in the first pyramid prism (1);
the light enters a second light path in the annular resonant cavity after being totally reflected and firstly reaches an acousto-optic Q switch (13), and the acousto-optic Q switch (13) is used for realizing the output of single-frequency pulse light after injection locking in cooperation with the opening and the closing of a signal of a 1.6 mu m single-frequency continuous seed laser source (15); after being transmitted by the acousto-optic Q switch (13), the 1645nm laser is transmitted by the compensation lens (12), and the compensation lens (12) has the function of ensuring the stable operation of the double-pyramid laser; the laser is transmitted through a double-wedge mirror (10) adhered with piezoelectric ceramics (11), the piezoelectric ceramics (11) is driven by periodically-changed sawtooth wave voltage, so that the thickness of the piezoelectric ceramics (11) is periodically changed, the cavity length of the double-cone laser is periodically changed, the inherent frequency of the double-cone laser is periodically changed, when the frequency of injected 1.6 mu m single-frequency continuous seed laser is the same as the inherent frequency of the double-cone laser, the single-frequency continuous seed laser and the double-cone laser are interfered, an interference signal is reflected by a resonance signal mirror (7) and enters an InGaAs detector (8) and is further fed back to a control circuit (9), and the acousto-optic Q switch (13) is controlled by the control circuit (9) to work; after being reflected by the second pyramid prism (2), the laser enters the first light path in the annular resonant cavity, and then is reflected by the second polaroid (6) to realize single-frequency and high-energy laser output.
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| CN105119139A (en) * | 2015-09-25 | 2015-12-02 | 哈尔滨工业大学 | Tunable single longitudinal mode 2[mu]m solid laser based on bipyramid resonant cavity |
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| US20160261085A1 (en) * | 2014-01-17 | 2016-09-08 | South China University Of Technology | Tunable Narrow-Linewidth Single-Frequency Linear-Polarization Laser Device |
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