CN113161490B - AuNCs-PEDOT and PSS composite flexible electrode and solar cell device - Google Patents
AuNCs-PEDOT and PSS composite flexible electrode and solar cell device Download PDFInfo
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Abstract
The invention relates to the technical field of solar cells, in particular to an AuNCs-PEDOT: PSS composite flexible electrode which is prepared by adopting one of six methods of solution spin coating, blade coating, slit extrusion type coating, screen printing, ink-jet printing and film transfer printing for a composite substance of an AuNCs (gold nanochain) solution and a PEDOT: PSS solution, wherein the volume ratio of the AuNCs solution to the PEDOT: PSS solution is 0-3: 1.A solar cell device based on an AuNCs-PEDOT and PSS composite flexible electrode comprises a substrate, a bottom electrode, an active layer and a top electrode which are stacked from bottom to top, wherein one of the bottom electrode and the top electrode adopts the AuNCs-PEDOT and PSS composite flexible electrode. The AuNCs-PEDOT PSS composite flexible electrode and the solar cell device have the advantages of excellent film forming property, high conductivity and high light transmittance.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to an AuNCs-PEDOT and PSS composite flexible electrode and a solar cell device.
Background
With the increasing deterioration of global climate and the continuous consumption of non-renewable energy, people are in need of clean renewable energy. Solar energy is a green renewable energy source, and is concerned by the advantages of cleanness, large storage capacity, wide distribution and the like. Among the applications, solar cells that convert solar energy into electrical energy have become a focus of research in various scientific communities and development in the industry.
After decades of development, multi-component thin film solar cells, organic solar cells, perovskite solar cells and the like have been gradually developed. Fig. 1 shows a solar cell device structure which is popular at present, and comprises a substrate, a bottom electrode, a charge transport layer 1, an active layer, a charge transport layer 2 and a top electrode. The bottom electrode of the device is usually made of transparent metal oxide conductive material, such as ito (indium tin oxide) and FTO (fluorinated-tin oxide), and the top electrode is usually made of metal material, such as gold, silver, aluminum, copper, etc.
The ITO and FTO electrodes contain noble metal indium, the materials are scarce and expensive, and meanwhile, the transparent metal oxide electrode has poor mechanical property and crisp quality and is not suitable for the aspects of solution processing and the like; the metal electrode is often prepared by vacuum evaporation, and the equipment is expensive and the process is complex. Therefore, the development of a novel flexible electrode with low cost, simple process and excellent performance is an important field of solar cell research. Flexible electrodes based on graphene, silver nanowires, metal grids, carbon nanotubes, conductive polymers, and the like, have been developed. Wherein the transparent conductive polymer is poly (3, 4-ethylenedioxythiophene): polystyrene sulfonate (PEDOT: PSS) is receiving more and more attention as an electrode due to the advantages of better flexibility, light transmittance, film forming property, compatibility with low-cost processing technology and the like. PSS is however an insulator, resulting in very low conductivity (below 1.0 Scm) for PEDOT: PSS films without any treatment -1 ) (ii) a In addition, since the crystallinity of PEDOT itself is not high, the transport efficiency and collection efficiency of holes are hindered. Therefore, further improvement of the conductivity of the flexible polymer matrix while maintaining the same has been a major issue.
Disclosure of Invention
The invention provides an AuNCs-PEDOT/PSS composite flexible electrode and a solar cell device for solving the technical defects, wherein a conductive component is effectively combined with a flexible polymer matrix, so that a gold nano-chain (AuNCs) material is compounded with the PEDOT/PSS material to improve the conductivity of the AuNCs-PEDOT/PSS composite flexible electrode and the solar cell device.
The invention discloses an AuNCs-PEDOT: PSS composite flexible electrode which is prepared from a composite substance of an AuNCs solution and a PEDOT: PSS solution by one of six methods of solution spin coating, blade coating, slit extrusion coating, screen printing, ink-jet printing and film transfer printing, wherein the volume ratio of the AuNCs solution to the PEDOT: PSS solution is 0-3: 1.
The gold nanochain (AuNCs) material is a novel one-dimensional nanomaterial with gold as an element composition and a chain-shaped structure, combines the excellent electrical conductivity of metal Au and the size effect (the transmission advantage of the one-dimensional nanomaterial on electrons and photons due to the large area-volume ratio and the length-diameter ratio) of the one-dimensional nanomaterial, and has excellent light transmission; the seepage network formed by AuNCs has excellent flexibility, can adapt to larger deformation and has very high mechanical strength; meanwhile, AuNCs have excellent chemical stability, have strong oxygen tolerance under normal environment, and are not easily oxidized like silver or copper nano materials; in addition, the AuNCs material can be directly prepared by a liquid dispersion liquid of water, and is completely mutually soluble with a conductive polymer PEDOT/PSS solution.
Preparing gold nano-chains:
generally, 1.0mL of HAuCl at a concentration of 12mg/mL is added with thorough stirring 4 The mixture was added to a volume of 79mL of deionized water and heated at 90 ℃. 4.0mL of trisodium citrate at a concentration of 10mg/mL and 1.0mL of Na at a concentration of 25mM 2 CO 3 And 15mL of deionized water were mixed to form a reducing agent, which was also heated at 90 ℃. Then, the reducing agent mixed solution was slowly added to HAuCl 4 In solution, and kept at 90 ℃ for reaction for 10 min. Next, the solution was gradually cooled to room temperature over 3h while maintaining stirring, followed by some more deionized water to give about 100ml of colloidal solution. After this time, 5. mu.L of HS-C was added 2 H 4 -COOH, gently shaken overnight and the resulting solution stored at 4 ℃. Finally, 9.09X 10 -7 And injecting the melamine stock solution of M into the gold nanoparticle solution under the stirring condition, so that the gold nanoparticles are aggregated to form a gold nanochain.
The six technologies of solution spin coating, blade coating, slit extrusion coating, screen printing, ink-jet printing and film transfer printing are adopted, and the method specifically comprises the following steps:
spin coating: the solution is dropped onto the substrate and the substrate is spun at a speed to form a thin film, the thickness of which depends primarily on the solution concentration and the spin speed.
Blade coating: the coating liquid is placed in front of a sharp blade, which forms a thin wet film as the blade moves over the substrate. The film thickness depends on the concentration of the solution, the viscosity and the surface energy of the substrate.
Slit extrusion coating: the coating liquid is extruded out from the gap of an extrusion nozzle by a narrow-slit extrusion type coating die head under pressure, a meniscus is formed between a lip and a smeared substrate, and the coating liquid is transferred and attached to the substrate to form the non-contact coating of a thin layer.
Screen printing: the method comprises the steps of pouring ink into one end of a screen printing plate during printing, applying certain pressure to the ink part on the screen printing plate by using a scraper, moving towards the other end of the screen printing plate at a constant speed, and extruding the ink onto a substrate from meshes of an image-text part by using the scraper during moving.
Ink-jet printing: under the drive of a printing signal, ink drops generated by the printing head are ejected to the substrate at a high speed through the small holes of the nozzle in a volume with a specified size, and non-contact, non-pressure and non-printing plate printing is realized.
Film transfer printing: the transfer structure comprising the film contact layer and the film layer is placed in intimate contact with a receiving surface and the film contact layer is then peeled away, thereby transferring the film layer to the receiving surface.
A solar cell device based on an AuNCs-PEDOT and PSS composite flexible electrode comprises a substrate, a bottom electrode, an active layer and a top electrode which are stacked from bottom to top, wherein one of the bottom electrode and the top electrode adopts the AuNCs-PEDOT and PSS composite flexible electrode.
When the bottom electrode is an AuNCs-PEDOT and PSS composite flexible electrode, a hole transport layer is arranged between the bottom electrode and the active layer, and an electron transport layer is arranged between the top electrode and the active layer; or only an electron transport layer is provided between the top electrode and the active layer. The substrate is made of glass or flexible polymer materials including but not limited to PET, PES or PEN, the top electrode is made of metal materials including but not limited to Ag, Cu and Al or non-metal materials with work function less than 5.1eV, the active layer is made of inorganic thin film materials or organic small molecules and polymer materials or perovskite materials such as CdTe, P3HT: PCBM, CH 3 NH 3 PbI 3 The electron transport layer is made of a main material with electron mobility greater than 10 -5 cm 2 v -1 s -1 And an N-type organic or inorganic semiconductor material such as fullerene and fullerene derivatives, PDINO, ZnO, etc. which is energy level matched with the active layer and the top electrode; the hole transport layer has a hole mobility of more than 10 -5 cm 2 v -1 s -1 And a P-type organic or inorganic semiconductor material energy-level-matched to the active layer, e.g. PEDOT: PSS (AI 4083), NiO x And the like. Wherein the hole transport layer and the electron transport layer can be omitted in the device according to the selection of the active layer material and the structure composition of the device.
When the bottom electrode is an AuNCs-PEDOT PSS composite flexible electrode, an electron transmission layer is arranged between the bottom electrode and the active layer, a hole transmission layer is arranged between the top electrode and the active layer, a low work function surface modification layer is arranged on the surface of the bottom electrode close to the active layer, and the low work function surface modification layer adopts a substance for reducing the work function of the bottom electrode to carry out surface modification on the film. The substrate is glass or flexible polymer material including but not limited to PET, PES or PEN, the top electrode is metal material including but not limited to Ag, Au or nonmetal material with work function higher than 4.5eV, the active layer is inorganic thin film material or organic small molecule and polymer material or perovskite material, such as CdTe, P3HT: PCBM, CH 3 NH 3 PbI 3 The electron transport layer is made of a main material with electron mobility greater than 10 -5 cm 2 v -1 s -1 And N-type organic or inorganic semiconductor materials such as fullerene and fullerene derivatives, ZnO, PEI, etc. energy level-matched to the active layer and top electrode; the hole transport layer has a hole mobility of more than 10 -5 cm 2 v -1 s -1 And a P-type organic or inorganic semiconductor material energy-level-matched to the active layer, e.g. PEDOT PSS (AI 4083), Spiro-OMeTAD, MoO x And the like. Wherein the hole transport layer and the electron transport layer can be omitted in the device according to the selection of the active layer material and the structure composition of the device.
When the top electrode is an AuNCs-PEDOT and PSS composite flexible electrode, a hole transport layer is arranged between the top electrode and the active layer, and an electron transport layer is arranged between the bottom electrode and the active layer; or only between the bottom electrode and the active layerAn electron transport layer is arranged between the two layers. The substrate is glass or flexible polymer material including but not limited to PET, PES or PEN, the bottom electrode is transparent metal oxide including but not limited to ITO or FTO or non-transparent metal oxide with work function less than 5.1eV, the active layer is inorganic thin film material or organic small molecule and polymer material or perovskite material such as CdTe, P3HT: PCBM, CH 3 NH 3 PbI 3 The electron transport layer has an electron mobility of more than 10 -5 cm 2 v -1 s -1 And N-type organic or inorganic semiconductor materials, e.g. fullerene derivatives, ZnO, SnO, level-matched to the active layer and the bottom electrode 2 Etc.; the hole transport layer has a hole mobility of more than 10 -5 cm 2 v -1 s -1 And an active layer energy-level matched with the P-type organic or inorganic semiconductor material, such as PEDOT PSS (AI 4083), Spiro-OMeTAD, MoO x And the like. The hole transport layer and the electron transport layer can be omitted in the device according to the selection of the active layer material and the composition of the device structure.
The energy level matching among the materials means that the charge transfer and transmission among the materials are good.
The technical scheme of the invention is as follows: the effect of forming a novel flexible electrode of the solar cell is achieved by means or a scheme of compounding a gold nanochain (AuNCs) material and a PEDOT/PSS material.
1. The AuNCs material and the PEDOT PSS material are compounded to be used as electrodes. The effect is that: the material has good flexibility, light transmittance and film-forming property and remarkably improved conductivity when used as an electrode.
2. And (3) adjusting the volume ratio of the AuNCs material to the PEDOT/PSS material, and optimizing the thickness of the composite film based on the optimal mixing ratio. The effect is that: the composite film is ensured to have high conductivity, proper work function and excellent film forming property when being used as an electrode.
3. The composite thin film can be used as both a top electrode and a bottom electrode depending on the device structure. The effect is that: the flexible and solution-soluble processing method solves the problems of expensive equipment, complex preparation, scarce indium material of the transparent metal oxide bottom electrode, poor mechanical property and brittleness of the metal top electrode.
The AuNCs-PEDOT PSS composite material, the composite flexible electrode and the solar cell device have the following advantages:
the aqueous solution of AuNCs can be uniformly dispersed with PEDOT and PSS, and the prepared composite film has excellent film forming property.
And 2, AuNCs have high conductivity, and the conductivity of the whole film can be improved by compounding the AuNCs with PEDOT/PSS, so that the defect of poor conductivity of an untreated PEDOT/PSS film is overcome.
AuNCs has the size effect of a one-dimensional nano material, and can fully exert the transmission advantages of the AuNCs and PEDOT/PSS on electrons and photons due to large area-volume ratio and aspect ratio.
And 4, due to the characteristics of large area-volume ratio and length-diameter ratio of AuNCs, the AuNCs and a conductive polymer PEDOT: PSS can form an excellent interpenetrating network structure to construct a three-dimensional conductive framework.
And 5, AuNCs have excellent flexibility, can adapt to larger deformation and have high mechanical strength, and the AuNCs are compounded with PEDOT and PSS to ensure that the electrode film has excellent flexibility and mechanical strength.
AuNCs has excellent chemical stability and strong oxygen tolerance under normal environment; in addition, AuNCs has excellent light transmission, and high stability and light transmission of the AuNCs-PEDOT and PSS composite electrode are ensured.
7. The prepared electrode material is light and soft, has simple synthesis, lower cost and good durability, and has wide use value in various aspects such as electroluminescence, field effect transistors, energy storage devices and the like.
Drawings
FIG. 1 is a schematic diagram of a prior art solar cell device structure;
FIG. 2 is a graph showing the trend of the conductivity of the composite films of examples 1 to 6 of the present invention;
FIG. 3 is a graph showing the variation of transmittance of the composite films of examples 1 to 6 according to the present invention;
FIG. 4 is a schematic structural view of embodiment 7 of the present invention;
FIG. 5 is a schematic structural view of example 8 of the present invention;
FIG. 6 is a schematic structural view of example 9 of the present invention;
FIG. 7 is a schematic structural view of example 10 of the present invention;
fig. 8 is a schematic structural diagram of embodiment 11 of the present invention.
Detailed Description
To further illustrate the technical means and effects of the present invention adopted to achieve the predetermined objects, the following detailed description of the embodiments, structures, features and effects according to the present invention will be made with reference to the accompanying drawings and preferred embodiments.
Example 1:
the invention discloses an AuNCs-PEDOT: PSS composite flexible electrode which is prepared by spin coating a composite substance of an AuNCs solution and a PEDOT: PSS solution by using a solution, wherein the volume ratio of the AuNCs solution to the PEDOT: PSS solution is 0: 1.
Example 2:
the invention discloses an AuNCs-PEDOT: PSS composite flexible electrode which is prepared by spin coating a composite substance of an AuNCs solution and a PEDOT: PSS solution by using a solution, wherein the volume ratio of the AuNCs solution to the PEDOT: PSS solution is 0.5: 1.
Example 3:
the invention discloses an AuNCs-PEDOT: PSS composite flexible electrode which is prepared by spin coating a composite substance of an AuNCs solution and a PEDOT: PSS solution by using a solution, wherein the volume ratio of the AuNCs solution to the PEDOT: PSS solution is 1: 1.
Example 4:
the invention discloses an AuNCs-PEDOT: PSS composite flexible electrode which is prepared by spin coating a composite substance of an AuNCs solution and a PEDOT: PSS solution by using a solution, wherein the volume ratio of the AuNCs solution to the PEDOT: PSS solution is 1.5: 1.
Example 5:
the invention discloses an AuNCs-PEDOT: PSS composite flexible electrode which is prepared by spin coating a composite substance of an AuNCs solution and a PEDOT: PSS solution by using a solution, wherein the volume ratio of the AuNCs solution to the PEDOT: PSS solution is 2: 1.
Example 6:
the invention discloses an AuNCs-PEDOT: PSS composite flexible electrode which is prepared by spin coating a composite substance of an AuNCs solution and a PEDOT: PSS solution by using a solution, wherein the volume ratio of the AuNCs solution to the PEDOT: PSS solution is 3: 1.
As shown in fig. 2 and 3, the graphs of the conductivity and transmittance of examples 1 to 6 of the present invention are shown.
Example 7:
as shown in FIG. 4, the invention discloses a solar cell device based on AuNCs-PEDOT: PSS composite flexible electrode, which comprises a substrate, a bottom electrode, an active layer and a top electrode which are stacked from bottom to top, wherein the bottom electrode adopts the AuNCs-PEDOT: PSS composite flexible electrode.
A hole transport layer is arranged between the bottom electrode and the active layer, and an electron transport layer is arranged between the top electrode and the active layer; the substrate is made of glass or flexible polymer materials including but not limited to PET, PES or PEN, the top electrode is made of metal materials including but not limited to Ag, Cu and Al or non-metal materials with work function less than 5.1eV, the active layer is made of inorganic thin film materials or organic small molecules and polymer materials or perovskite materials such as CdTe, P3HT: PCBM, CH 3 NH 3 PbI 3 The electron transport layer is made of a main material with electron mobility greater than 10 -5 cm 2 v -1 s -1 And an N-type organic or inorganic semiconductor material such as fullerene and fullerene derivatives, PDINO, ZnO, etc. which is energy level matched with the active layer and the top electrode; the hole transport layer has a hole mobility of more than 10 - 5 cm 2 v -1 s -1 And a P-type organic or inorganic semiconductor material energy-level-matched to the active layer, e.g. PEDOT: PSS (AI 4083), NiO x And the like.
Example 8:
as shown in FIG. 5, the invention discloses a solar cell device based on AuNCs-PEDOT: PSS composite flexible electrode, which comprises a substrate, a bottom electrode, an active layer and a top electrode which are stacked from bottom to top, wherein the bottom electrode adopts the AuNCs-PEDOT: PSS composite flexible electrode.
At the top electrode andan electron transport layer is disposed between the active layers. The substrate is made of glass or flexible polymer materials including but not limited to PET, PES or PEN, the top electrode is made of metal materials including but not limited to Ag, Cu and Al or non-metal materials with work function less than 5.1eV, the active layer is made of inorganic thin film materials or organic small molecules and polymer materials or perovskite materials such as CdTe, P3HT: PCBM, CH 3 NH 3 PbI 3 The electron transport layer is made of a main material with electron mobility greater than 10 -5 cm 2 v -1 s -1 And N-type organic or inorganic semiconductor materials such as fullerene and fullerene derivatives, PDINO, ZnO, etc. energy level-matched to the active layer and top electrode.
Example 9:
as shown in fig. 6, the invention discloses a solar cell device based on an AuNCs-PEDOT: PSS composite flexible electrode, which comprises a substrate, a bottom electrode, an active layer and a top electrode which are stacked from bottom to top, wherein the bottom electrode adopts the AuNCs-PEDOT: PSS composite flexible electrode.
An electron transport layer is arranged between the bottom electrode and the active layer, a hole transport layer is arranged between the top electrode and the active layer, a low work function surface modification layer is arranged on the surface of the bottom electrode close to the active layer, and the low work function surface modification layer adopts a substance for reducing the work function of the bottom electrode to perform surface modification on the film. The substrate is glass or flexible polymer material including but not limited to PET, PES or PEN, the top electrode is metal material including but not limited to Ag, Au or non-metal material with work function higher than 4.5eV, the active layer is inorganic thin film material or organic small molecule and polymer material or perovskite material such as CdTe, P3HT: PCBM, CH 3 NH 3 PbI 3 The electron transport layer is made of a main material with electron mobility greater than 10 -5 cm 2 v -1 s -1 And an N-type organic or inorganic semiconductor material such as fullerene and fullerene derivatives, ZnO, PEI, etc. which is energy level-matched with the active layer and the top electrode; the hole transport layer has a hole mobility of more than 10 -5 cm 2 v -1 s -1 And a P-type organic or inorganic semiconductor material energy-level-matched to the active layer, e.g. PEDOT: PSS (AI 4083),Spiro-OMeTAD、MoO x And the like.
Example 10:
as shown in fig. 7, the invention discloses a solar cell device based on an AuNCs-PEDOT: PSS composite flexible electrode, which comprises a substrate, a bottom electrode, an active layer and a top electrode which are stacked from bottom to top, wherein the top electrode adopts the AuNCs-PEDOT: PSS composite flexible electrode.
A hole transport layer is disposed between the top electrode and the active layer, and an electron transport layer is disposed between the bottom electrode and the active layer. The substrate is glass or flexible polymer material including but not limited to PET, PES or PEN, the bottom electrode is transparent metal oxide including but not limited to ITO or FTO or non-transparent metal oxide with work function less than 5.1eV, the active layer is inorganic thin film material or organic small molecule and polymer material or perovskite material such as CdTe, P3HT: PCBM, CH 3 NH 3 PbI 3 The electron transport layer has an electron mobility of more than 10 -5 cm 2 v -1 s -1 And N-type organic or inorganic semiconductor materials, e.g. fullerene derivatives, ZnO, SnO, level-matched to the active layer and the bottom electrode 2 Etc.; the hole transport layer has a hole mobility of more than 10 -5 cm 2 v -1 s -1 And a P-type organic or inorganic semiconductor material energy-level-matched to the active layer, e.g. PEDOT PSS (AI 4083), Spiro-OMeTAD, MoO x And the like.
Example 11:
as shown in fig. 8, the invention discloses a solar cell device based on an AuNCs-PEDOT: PSS composite flexible electrode, which comprises a substrate, a bottom electrode, an active layer and a top electrode which are stacked from bottom to top, wherein the top electrode adopts the AuNCs-PEDOT: PSS composite flexible electrode.
An electron transport layer is disposed between the bottom electrode and the active layer. The substrate is glass or flexible polymer material including but not limited to PET, PES or PEN, the bottom electrode is transparent metal oxide including but not limited to ITO or FTO or non-transparent metal oxide with work function less than 5.1eV, the active layer is inorganic thin film material or organic small molecule and polymer material or perovskite material such as CdTe, P3HT: PCBM, CH 3 NH 3 PbI 3 Etc. the electron transport layer has an electron mobility of more than 10 -5 cm 2 v -1 s -1 And N-type organic or inorganic semiconductor materials, e.g. fullerene derivatives, ZnO, SnO, level-matched to the active layer and the bottom electrode 2 And the like.
Although the present invention has been described with reference to the preferred embodiments, it will be understood by those skilled in the art that various changes may be made and equivalents may be substituted for elements thereof without departing from the scope of the present invention.
Claims (8)
1. The AuNCs-PEDOT and PSS composite flexible electrode is characterized in that: the composite material is prepared from a composite material of AuNCs solution and PEDOT: PSS solution by one of six methods of solution spin coating, blade coating, slit extrusion coating, screen printing, ink-jet printing and film transfer printing, wherein the volume ratio of the AuNCs solution to the PEDOT: PSS solution is 0-3:1, the volume ratio of the PEDOT: PSS solution is 0-3:1, and the volume of the AuNCs solution is not 0; AuNCs are gold nano-chains, wherein the preparation of the gold nano-chains comprises the following steps: 1.0mL of HAuCl at a concentration of 12mg/mL 4 Adding into 79mL deionized water, heating at 90 deg.C, adding 4.0mL trisodium citrate 10mg/mL and 1.0mL Na 25mM 2 CO 3 And 15mL of deionized water were mixed to prepare a reducing agent, which was also heated at 90 ℃ and then the reducing agent mixture was added to HAuCl 4 Keeping the solution at 90 ℃ for reaction for 10min, and then gradually cooling the solution to room temperature within 3h while keeping stirring, and then supplementing deionized water to obtain about 100ml of colloidal solution; 5 μ L of HS-C was added 2 H 4 -COOH, gently shaking overnight, the resulting solution was stored at 4 deg.CFinally, 9.09X 10 -7 And injecting the melamine stock solution of M into the gold nanoparticle solution under the stirring condition, so that the gold nanoparticles are aggregated to form a gold nanochain.
2.A solar cell device based on the AuNCs-PEDOT: PSS composite flexible electrode as claimed in claim 1, characterized in that: the electrode comprises a substrate, a bottom electrode, an active layer and a top electrode which are stacked from bottom to top, wherein one of the bottom electrode and the top electrode adopts an AuNCs-PEDOT: PSS composite flexible electrode.
3. The solar cell device based on AuNCs-PEDOT PSS composite flexible electrode as claimed in claim 2, wherein: when the bottom electrode is an AuNCs-PEDOT and PSS composite flexible electrode, a hole transport layer is arranged between the bottom electrode and the active layer, and an electron transport layer is arranged between the top electrode and the active layer; or an electron transport layer may be provided only between the top electrode and the active layer.
4. The solar cell device based on the AuNCs-PEDOT PSS composite flexible electrode as claimed in claim 3, wherein: the substrate is made of glass or flexible polymer material, the top electrode is made of metal material or nonmetal material with work function less than 5.1eV, the active layer is made of inorganic thin film material or organic micromolecule and polymer material or perovskite material, and the main material of the electron transmission layer is made of electron mobility more than 10 -5 cm 2 v -1 s -1 And an N-type organic or inorganic semiconductor material energy-level matched with the active layer and the top electrode, the hole transport layer has a hole mobility of more than 10 -5 cm 2 v -1 s -1 And a P-type organic or inorganic semiconductor material that is energy level matched to the active layer.
5. The solar cell device based on AuNCs-PEDOT PSS composite flexible electrode as claimed in claim 2, wherein: when the bottom electrode is an AuNCs-PEDOT PSS composite flexible electrode, an electron transmission layer is arranged between the bottom electrode and the active layer, a hole transmission layer is arranged between the top electrode and the active layer, a low work function surface modification layer is arranged on the surface of the bottom electrode close to the active layer, and the low work function surface modification layer adopts a substance for reducing the work function of the bottom electrode to carry out surface modification on the film.
6. The solar cell device based on the AuNCs-PEDOT PSS composite flexible electrode as claimed in claim 5, wherein: the substrate is made of glass or flexible polymer material, the top electrode is made of metal material or nonmetal material with work function higher than 4.5eV, the active layer is made of inorganic thin film material or organic micromolecule and polymer material or perovskite material, and the main body material of the electron transmission layer is made of electron mobility larger than 10 -5 cm 2 v -1 s -1 And an N-type organic or inorganic semiconductor material energy-level matched with the active layer and the top electrode, the hole transport layer has a hole mobility of more than 10 -5 cm 2 v -1 s -1 And a P-type organic or inorganic semiconductor material that is energy level matched to the active layer.
7. The solar cell device based on AuNCs-PEDOT PSS composite flexible electrode as claimed in claim 2, wherein: when the top electrode is an AuNCs-PEDOT and PSS composite flexible electrode, a hole transport layer is arranged between the top electrode and the active layer, and an electron transport layer is arranged between the bottom electrode and the active layer; or an electron transport layer may be provided only between the bottom electrode and the active layer.
8. The solar cell device based on AuNCs-PEDOT PSS composite flexible electrode according to claim 7, characterized in that: the substrate is glass or flexible polymer material, the bottom electrode is transparent metal oxide or non-transparent metal oxide with work function less than 5.1eV, the active layer is inorganic film material or organic small molecule and polymer material or perovskite material, and the electron transport layer is electron mobility greater than 10 -5 cm 2 v -1 s -1 And an N-type organic or inorganic semiconductor material having an energy level matching with the active layer and the bottom electrode, the hole transport layer having hole mobilityGreater than 10 -5 cm 2 v -1 s -1 And a P-type organic or inorganic semiconductor material that is energy level matched to the active layer.
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