CN113161439B - Battery interconnection structure, assembly and preparation method - Google Patents
Battery interconnection structure, assembly and preparation method Download PDFInfo
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- CN113161439B CN113161439B CN202110131145.5A CN202110131145A CN113161439B CN 113161439 B CN113161439 B CN 113161439B CN 202110131145 A CN202110131145 A CN 202110131145A CN 113161439 B CN113161439 B CN 113161439B
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- conductive adhesive
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- 238000002360 preparation method Methods 0.000 title abstract description 4
- 238000003466 welding Methods 0.000 claims abstract description 37
- 239000012790 adhesive layer Substances 0.000 claims abstract description 35
- 229910000679 solder Inorganic materials 0.000 claims abstract description 13
- 239000010410 layer Substances 0.000 claims abstract description 12
- 239000002313 adhesive film Substances 0.000 claims description 22
- 239000011521 glass Substances 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 238000003475 lamination Methods 0.000 claims description 5
- 238000009396 hybridization Methods 0.000 claims description 4
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 claims description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 3
- 239000002041 carbon nanotube Substances 0.000 claims description 3
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 229920001940 conductive polymer Polymers 0.000 claims description 3
- 238000002788 crimping Methods 0.000 claims description 3
- 229910021389 graphene Inorganic materials 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000002070 nanowire Substances 0.000 claims description 3
- 239000002096 quantum dot Substances 0.000 claims description 3
- 238000007711 solidification Methods 0.000 claims description 3
- 230000008023 solidification Effects 0.000 claims description 3
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 claims description 2
- 239000003822 epoxy resin Substances 0.000 claims description 2
- 229920000647 polyepoxide Polymers 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 9
- 229910052709 silver Inorganic materials 0.000 abstract description 9
- 239000004332 silver Substances 0.000 abstract description 9
- 238000000034 method Methods 0.000 abstract description 6
- 239000004020 conductor Substances 0.000 abstract description 2
- 230000008569 process Effects 0.000 abstract description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910006404 SnO 2 Inorganic materials 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- GKWLILHTTGWKLQ-UHFFFAOYSA-N 2,3-dihydrothieno[3,4-b][1,4]dioxine Chemical compound O1CCOC2=CSC=C21 GKWLILHTTGWKLQ-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229960002796 polystyrene sulfonate Drugs 0.000 description 2
- 239000011970 polystyrene sulfonate Substances 0.000 description 2
- 229910001174 tin-lead alloy Inorganic materials 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0512—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Connection Of Batteries Or Terminals (AREA)
- Battery Electrode And Active Subsutance (AREA)
Abstract
The invention discloses a battery interconnection structure, a battery assembly and a preparation method, wherein the battery interconnection structure comprises a battery, a main grid, a transparent conductive adhesive layer and a welding strip, wherein the transparent conductive adhesive layer covers the main grid, and the width of the transparent conductive adhesive layer is larger than that of the main grid; the welding strip is pressed on the main grid, and the height of the transparent conductive adhesive layer is larger than the heights of the main grid and the welding strip. In the invention, the welding strip and the main grid are adhered and fixed by adopting the transparent conductive adhesive layer, so that the process reliability of the whole assembly is greatly improved. Due to the presence of the double-layer parallel conductors, the total resistance will be greatly reduced according to 1/r=1/r1+1/R2 even with lower diameter solder strips. The design of the battery screen plate can cancel the bonding pad and the anti-breaking grid structure due to the transparent conductive bonding layer, so that the positive silver consumption is saved; the structure of eliminating the bonding pad and reducing the diameter of the bonding tape can increase the light receiving surface of the battery and improve the power output generated in unit area.
Description
Technical Field
The invention relates to the technical field of photovoltaic cells, in particular to a battery interconnection structure, a battery assembly and a preparation method.
Background
In the past, the large-scale use of traditional petrochemical industry promotes the industry level to continuously advance, the living level of people is continuously improved, but the use is improper, the management is lack to cause the environmental pollution to be serious, and the households on which people depend to live are seriously threatened, each government agency also continuously adopts powerful measures to suppress pollution, one of the powerful measures is to develop green energy, the photovoltaic module can directly convert sunlight into electric energy, and the photovoltaic module has no pollution, can be continued, has high efficiency and is easy to realize, so that the photovoltaic module is rapidly developed in recent years, and the accumulated installed quantity of China breaks through 130.25GW at present.
In recent years, photovoltaic power station project investors pay more and more attention to electricity cost, and the application of high-power components can further reduce electricity cost, and photovoltaic component manufacturers continuously upgrade and improve component output power through technology. The output power of the component can be improved by improving the efficiency of the battery, optimizing the material collocation, innovating the circuit design and the like, such as half-sheet, tile overlapping, double-sided, multi-main grid technology and the like. The multi-main-grid assembly can reduce the positive silver consumption, the power of the lifting assembly is widely welcomed, the market share is rapidly improved, and the market share in 2020 reaches more than 40%.
At present, the realization mode of the multi-main-grid assembly is that a circular welding strip with tin-lead alloy plated on the surface is welded with a battery through thermal infrared, and a battery screen plate is provided with a plurality of welding pads, but at present, the following problems still exist (as disclosed in patent document CN208767313U, namely, a multi-main-grid solar photovoltaic assembly):
the circular welding strip is only welded with the battery through a plurality of welding pads, the bottom of the circular welding strip is only welded with the battery, the contact area is small, the problem of false welding is easy to occur, in order to reduce the influence of the false welding, a plurality of welding pads are required to be arranged on a single main grid, the grid breakage is prevented from being gradually changed, the consumption of silver paste is greatly increased, and the cost is also greatly increased; secondly, the solder reacts with silver in the bonding pad to form alloy under the condition of thermal heating of tin-lead alloy on the surface of the circular solder strip, the tin-lead protective layer on the surface of the circular solder strip is adsorbed on the battery bonding pad under the action of surface tension and the like in a molten state, the copper body at the upper part of the solder strip is exposed to air and rapidly oxidized at high temperature, the conductivity is poor, and even acetic acid, water oxygen and the like in EVA after encapsulation further corrode the copper body, the conductivity of the solder strip is reduced, and the long-term reliability is influenced; thirdly, the resistance of the circular welding strip is inversely proportional to the sectional area under the condition of the same length, and the larger the area is, the lower the resistance is, so that the diameter of the circular welding strip is generally 0.35-0.4mm based on the consideration of circuit loss, the shading area of the welding strip reaches 2% based on a nine-main-grid 158.75 battery, and the power of the assembly is difficult to further improve; fourthly, the diameter of the conventional welding strip is 0.35-0.4mm, the spacing between the component pieces is required to be set to be 2mm or more, so that series welding and lamination cracking can be reduced, the component efficiency is lower, and the BOM cost is increased.
Disclosure of Invention
The invention aims to solve the defects in the prior art, and provides a battery interconnection structure which comprises a battery, a main grid, a transparent conductive adhesive layer and a welding strip, wherein the transparent conductive adhesive layer covers the main grid, and the width of the transparent conductive adhesive layer is larger than that of the main grid; the welding strip is pressed on the main grid, and the transparent conductive adhesive layer is higher than the main grid and the welding strip.
Further, the transparent conductive adhesive layer is one of an organosilicon system, an acrylic acid system, an epoxy resin system and a hybridization system thereof.
Further, the conductive medium in the transparent conductive bonding layer is one or more of conductive oxide, a hybridization system, a carbon nanotube, graphene, a conductive polymer, a metal nanowire and a metal nanodot.
Further, the conductive medium in the transparent conductive adhesive layer is SnO 2 、In 2 O 3 、 Cd 2 In 4 、SnO 2 ：Sb、SnO 2 ：F、In 2 O 3 ：Sn、ZnO:Al、TiO 2 : nb, polyimide, (3, 4-ethylenedioxythiophene): one or more of polystyrene sulfonate, silver and silver-coated copper.
Further, the section of the welding strip is circular, the diameter of the welding strip is 0.05-0.3 mm, and the thickness of the tin-lead layer on the surface of the welding strip is 3-10 mu m.
Compared with the traditional welding strip with the diameter of 0.3-0.5 mm, the welding strip with the diameter of 0.05-0.3 mm can enlarge the light receiving surface of the battery, so that the battery component with unit area can generate more power output.
Further, both left and right sides of the transparent conductive adhesive layer extend to the surface of the battery, respectively.
A battery interconnection assembly comprises a frame and a battery interconnection structure, wherein a cover plate, a lower adhesive film, the battery interconnection structure, an upper adhesive film and glass are sequentially arranged in the frame from inside to outside.
Preferably, the upper adhesive film is a transparent adhesive film, and the lower adhesive film is a transparent or ceramic white adhesive film.
Preferably, the cover plate is a back plate or inorganic glass
A method for manufacturing an interconnection structure of a battery, the method comprising the steps of:
step one: coating a transparent conductive adhesive layer on the main grid side of the battery;
step two: the welding strip is arranged on the transparent conductive adhesive layer at the position of the main grid through the positioning device, and is connected with the main grid in a crimping manner;
step three: preheating for 10-30 s at the temperature of 80-110 ℃ by using thermal infrared rays to realize the primary solidification of the adhesive layer;
step four: and after the lamination is completed, the adhesive film is laminated in a laminating machine to realize complete curing.
The beneficial effects are that: (1) According to the invention, the transparent conductive bonding layer is adopted to bond and fix the welding strip and the main grid, so that the problems of easy occurrence of cold joint, tin beads and exposed copper in the inner layer of the welding strip during high-temperature heating can be effectively avoided, the defective rate of series joint, repair and lamination caused by cold joint and tin beads is further avoided, the influence of the reduction of long-term reliability of the component caused by exposed copper is avoided, and the process reliability of the whole component is greatly improved.
(2) Due to the presence of the double-layer parallel conductors, the total resistance will be greatly reduced according to 1/r=1/r1+1/R2 even with lower diameter solder strips.
(3) In the invention, due to the transparent conductive adhesive layer, the design of the battery screen plate can cancel the bonding pad and the anti-breaking grid structure, thereby saving the positive silver consumption.
(4) In the invention, the structure of eliminating the bonding pad and reducing the diameter of the bonding tape can increase the light receiving surface of the battery and improve the power output generated in unit area.
Drawings
FIG. 1 is a schematic diagram of a front screen of a conventional battery in the background art;
FIG. 2 is a schematic view of a front screen of a battery in the present invention;
fig. 3 is a schematic view of a battery interconnect structure in the present invention;
fig. 4 is a partial enlarged view of a battery interconnection structure in the present invention;
fig. 5 is a schematic cross-sectional view of a battery interconnect structure in accordance with the present invention;
fig. 6 is an enlarged partial schematic view of a cross section of a battery interconnect structure in accordance with the present invention;
FIG. 7 is a schematic cross-sectional view of a battery interconnect assembly in accordance with the present invention;
in the figure: 1. glass, 2, upper adhesive film, 3, battery interconnection structure, 4, lower adhesive film, 5, cover plate, 6, bonding pad, 7, gradual change design, 8, main grid, 9, transparent conductive adhesive layer, 10, welding strip, 11, battery, 12, frame.
Detailed Description
The present invention will be further described in detail with reference to the following examples and drawings for the purpose of enhancing the understanding of the present invention, which examples are provided for the purpose of illustrating the present invention only and are not to be construed as limiting the scope of the present invention.
As shown in fig. 2-6, a battery interconnection structure comprises a battery 11, a main grid 8, a transparent conductive adhesive layer 9 and a welding strip 10, wherein the transparent conductive adhesive layer 9 covers the main grid 8, and the width of the transparent conductive adhesive layer 9 is larger than that of the main grid 8; the welding strip 10 is pressed on the main grid 8, and the height of the transparent conductive bonding layer 9 is larger than the heights of the main grid 8 and the welding strip 10.
In this embodiment, the transparent conductive adhesive layer is one of an organosilicon system, an acrylic system, an epoxy system, and a hybrid system thereof.
In this embodiment, the conductive medium in the transparent conductive adhesive layer is one or more of conductive oxide and hybrid system, carbon nanotube, graphene, conductive polymer, metal nanowire, and metal nanodot.
In this embodiment, the conductive medium in the transparent conductive adhesive layer is specifically SnO 2 、In 2 O 3 、Cd 2 In 4 、SnO 2 ：Sb、SnO 2 ：F、In 2 O 3 ：Sn、ZnO:Al、TiO 2 : nb, polyimide, (3, 4-ethylenedioxythiophene): one or more of polystyrene sulfonate, silver and silver-coated copper.
In this embodiment, the cross section of the solder strip is circular, the diameter of the solder strip is 0.05-0.3 mm, and the thickness of the tin-lead layer on the surface of the solder strip is 3-10 μm.
In this embodiment, the left and right sides of the transparent conductive adhesive layer extend to the surface of the battery, respectively.
As shown in FIG. 7, a battery interconnection assembly, the assembly comprises a frame and a battery interconnection structure, wherein a cover plate, a lower adhesive film, a battery interconnection structure, an upper adhesive film and glass are sequentially arranged in the frame from inside to outside.
In this embodiment, the upper adhesive film is a transparent adhesive film, and the lower adhesive film is transparent or porcelain Bai Jiaomo; the cover plate is a back plate or inorganic glass
A method for manufacturing an interconnection structure of a battery, the method comprising the steps of:
step one: coating a transparent conductive adhesive layer on the main grid side of the battery;
step two: the welding strip is arranged on the transparent conductive adhesive layer at the position of the main grid through the positioning device, and is connected with the main grid in a crimping manner;
step three: preheating for 10-30 s at the temperature of 80-110 ℃ by using thermal infrared rays to realize the primary solidification of the adhesive layer;
step four: and after the lamination is completed, the adhesive film is laminated in a laminating machine to realize complete curing.
The foregoing description of the preferred embodiments of the invention is not intended to limit the invention to the precise form disclosed, and any such modifications, equivalents, and alternatives falling within the spirit and scope of the invention are intended to be included within the scope of the invention.
Claims (7)
1. The battery interconnection structure is characterized by comprising a battery, a main grid, a transparent conductive adhesive layer and a welding strip, wherein the transparent conductive adhesive layer covers the main grid, and the width of the transparent conductive adhesive layer is larger than that of the main grid; the welding strip is pressed on the main grid, and the height of the transparent conductive adhesive layer is greater than the heights of the main grid and the welding strip;
the transparent conductive bonding layer is one of an organic silicon system, an acrylic acid system, an epoxy resin system and a hybridization system thereof, and the conductive medium in the transparent conductive bonding layer is one or more of a conductive oxide and hybridization system, a carbon nano tube, graphene, a conductive polymer, a metal nano wire and a metal nano dot.
2. The battery interconnection structure according to claim 1, wherein the solder strip has a circular cross section, the solder strip has a diameter of 0.05-0.3 mm, and the solder strip has a surface tin-lead layer thickness of 3-10 μm.
3. The structure of claim 1, wherein the transparent conductive adhesive layer extends to the surface of the battery on both sides.
4. A battery interconnection assembly, characterized in that the assembly comprises a frame and a battery interconnection structure, wherein the battery interconnection structure is as claimed in any one of claims 1-3, and a cover plate, a lower adhesive film, a battery interconnection structure, an upper adhesive film and glass are sequentially arranged in the frame from inside to outside.
5. The battery interconnect assembly of claim 4, wherein the upper adhesive film is a transparent adhesive film and the lower adhesive film is a transparent or ceramic white adhesive film.
6. The battery interconnect assembly of claim 5 wherein the cover plate is a back plate or inorganic glass.
7. A method of manufacturing a battery interconnect assembly according to any one of claims 4-6, comprising the steps of:
step one: coating a transparent conductive adhesive layer on the main grid side of the battery;
step two: the welding strip is arranged on the transparent conductive adhesive layer at the position of the main grid through the positioning device, and is connected with the main grid in a crimping manner;
step three: preheating for 10-30 s at the temperature of 80-110 ℃ by using thermal infrared rays to realize the primary solidification of the adhesive layer;
step four: and after the lamination is completed, the adhesive film is laminated in a laminating machine to realize complete curing.
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| CN202110131145.5A CN113161439B (en) | 2021-01-30 | 2021-01-30 | Battery interconnection structure, assembly and preparation method |
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| CN202110131145.5A CN113161439B (en) | 2021-01-30 | 2021-01-30 | Battery interconnection structure, assembly and preparation method |
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| CN113161439B true CN113161439B (en) | 2023-12-19 |
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| CN113871496A (en) * | 2021-09-17 | 2021-12-31 | 常州大学 | Electrode structure of photovoltaic cell and preparation method |
| CN116093167A (en) * | 2022-12-19 | 2023-05-09 | 无锡荷雨新能源科技有限公司 | Battery assembly, photovoltaic assembly and preparation method of photovoltaic assembly |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102376791A (en) * | 2010-08-11 | 2012-03-14 | Lg电子株式会社 | Solar cell panel |
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| CN102376791A (en) * | 2010-08-11 | 2012-03-14 | Lg电子株式会社 | Solar cell panel |
| CN103283034A (en) * | 2010-10-29 | 2013-09-04 | 夏普株式会社 | Method for manufacturing solar cell with wiring sheet, method for manufacturing solar cell module, solar cell with wiring sheet, and solar cell module |
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