CN113161334A - Photoelectric sensing packaging structure - Google Patents
Photoelectric sensing packaging structure Download PDFInfo
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- CN113161334A CN113161334A CN202110086640.9A CN202110086640A CN113161334A CN 113161334 A CN113161334 A CN 113161334A CN 202110086640 A CN202110086640 A CN 202110086640A CN 113161334 A CN113161334 A CN 113161334A
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- light
- light emitting
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 239000000853 adhesive Substances 0.000 claims description 8
- 230000001070 adhesive effect Effects 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 229910000679 solder Inorganic materials 0.000 claims description 2
- 239000012780 transparent material Substances 0.000 claims description 2
- 239000003292 glue Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000003822 epoxy resin Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
The invention discloses a photoelectric sensing packaging structure, comprising: a light emitting element having a light emitting surface; a light receiving element having a light receiving surface; the light emitting element and the light receiving element are arranged in the concave space and fixedly connected to the bottom, and the light emitting element and the light receiving element are respectively electrically connected to the substrate; the first hole corresponds to the light emitting surface of the light emitting element, and the second hole corresponds to the light receiving surface of the light receiving element.
Description
Technical Field
The present invention relates to a photo-sensing package structure, and more particularly, to a photo-sensing package structure including a light emitting device and a light receiving device.
Background
Regarding the package manufacturing process of the light Emitting element, such as a Vertical Cavity Surface Emitting Laser (VCSEL), and the light receiving element, such as a Photo-Detector Integrated Circuit (PDIC), the complicated Molding (Molding) and alignment procedure are generally required in the manufacturing process to avoid the interference (Cross-talk) effect between the Laser element and the light receiving element.
Referring to fig. 1A and 1B, a top view and a side view of a conventional photoelectric sensing package structure 10 with a light emitting device and a light receiving device are shown. Firstly, fixing the light emitting element 110 for emitting light and the light receiving element 120 for receiving light on the substrate 100, respectively punching the conductive circuits 112 and 122, and then performing first sealing, so as to form a transparent protection structure 130 on the light emitting element 110 and the light receiving element 120, wherein the transparent protection structure 130 comprises two independent transparent protection structures 130A and 130B which respectively coat the light emitting element 110 and the light receiving element 120; then, a second molding process is performed to form a black matrix layer 140 covering the transparent protection structure 130. The black glue layer 140 may isolate the transparent protection structures 130A and 130B to prevent Cross-talk (Cross-talk) between the light emitting device 110 and the light receiving device 120 from affecting the accuracy of optical signal detection. Corresponding holes are formed on the black glue layer 140 corresponding to the light emitting (as indicated by arrow E) of the light emitting element 110 and the light receiving (as indicated by arrow R) of the light receiving element 120, and are used as the light emitting hole 141 and the light receiving hole 142 of the photo-sensing package structure 10. However, the light-emitting hole 141 and the light-receiving hole 142 formed in the black glue layer 140 must be precisely aligned with the light-emitting element 110 and the light-receiving element 120, respectively, to ensure that the photo-sensing package structure 10 can correctly emit and receive light.
Please refer to fig. 2A and 2B, which are a top view and a side view of another conventional photo-sensing package structure 20 with a light emitting device and a light receiving device. The light emitting element 210 for emitting light (as indicated by arrow E) and the light receiving element 220 for receiving light (as indicated by arrow R) are fixed on the substrate 200, and the conductive traces 212 and 222 are respectively formed thereon, followed by molding to form the transparent protection structure 230. Next, a scribe line 232 is formed in the transparent protection structure 230, the scribe line 232 extends to the upper surface 200A of the substrate 200, so that the transparent protection structure 230 forms two independent transparent protection structures 230A and 230B respectively covering the light emitting element 210 and the light receiving element 220, and the scribe line 232 is filled with a black glue 240 to avoid light leakage and crosstalk. This process is relatively simple, but the transparent protection structure 230 needs to be cut and broken, so that the whole package structure 20 becomes relatively fragile.
Please refer to fig. 3A and 3B, which are a top view and a side view of another conventional photo-sensing package structure 30 with a light emitting device and a light receiving device. The light emitting element 310 for emitting light (as indicated by arrow E) and the light receiving element 320 for receiving light (as indicated by arrow R) are fixed on the substrate 300, and after the conductive traces 312 and 322 are respectively formed, the sealing is performed to form the transparent protection structure 330. Then, forming a scribe line 332 in the transparent protection structure 330; unlike the package structure 20 shown in fig. 2A and 2B, in this example, a portion of the transparent protection structure 330 is remained on the upper surface 300A of the substrate, i.e., the scribe line 332 does not reach as far as the upper surface 300A of the substrate 300. In contrast, although the manufacturing process is simpler, the transparent protection structure 330 still needs to be cut and broken, so that the whole package structure 20 becomes relatively fragile; the portions of the transparent protective structure 330 under the dicing streets 332 will also cause different levels of optical crosstalk due to the different residual heights.
Disclosure of Invention
The invention provides a photoelectric sensing packaging structure, which is formed by utilizing a light emitting element and a light receiving element of a Flip Chip structure (Flip Chip), omits complicated sealing glue and alignment procedures in the existing photoelectric sensing packaging manufacturing process, also omits a routing space required by the existing packaging structure, and further reduces the volume of the whole packaging structure.
According to the present invention, a photo-sensing package structure is provided, which includes: a light emitting element having a light emitting surface; a light receiving element having a light receiving surface; the light emitting element and the light receiving element are arranged in the concave space and fixedly connected to the bottom, and the light emitting element and the light receiving element are respectively electrically connected to the substrate; the first hole corresponds to the light emitting surface of the light emitting element, and the second hole corresponds to the light receiving surface of the light receiving element.
Drawings
For a better understanding of the nature and technical content of the present invention, reference should be made to the following detailed description of the embodiments of the present invention, which is to be read in connection with the accompanying drawings. The detailed description and drawings disclosed are merely provided for reference and illustration purposes only and are not intended to limit the invention; wherein:
fig. 1A and 1B are a top view and a side view of a conventional photo-sensing package structure with a light emitting device and a light receiving device.
Fig. 2A and 2B are a top view and a side view of another conventional photo-sensing package structure with a light emitting device and a light receiving device.
Fig. 3A and 3B are a top view and a side view of another conventional photo-sensing package structure with a light emitting device and a light receiving device.
Fig. 4A to 4G are schematic views of structures formed in various steps of the manufacturing process of the photoelectric sensing package of the present invention, for illustrating the photoelectric sensing package structure according to an embodiment of the present invention.
Description of the symbols
10 photoelectric sensing packaging structure
100 substrate
110 light-emitting element
112 conductive circuit
120 light receiving element
122 conductive line
130 protective structure
140 black glue layer
141 light-emitting hole
142 light collecting hole
20 photoelectric sensing packaging structure
200 substrate
200A die bonding surface
210 light emitting element
212 conductive line
220 light receiving element
222 conductive circuit
230 protection structure
232 cutting path
240 black glue
30 photoelectric sensing packaging structure
300 base plate
300A die bonding surface
310 light-emitting element
312 conductive line
320 light receiving element
322 conductive trace
330 protection structure
332 cutting channel
40 photoelectric sensing packaging structure
400 conductive substrate
400A 1-400A 6 pins
401 side wall
402 bottom
403 recess space
410 light-emitting element
410A light-emitting surface
412 first conductive structure
4121 first electrode
4122 second electrode
420 light receiving element
420A light receiving surface
422 second conductive structure
4221 third electrode
4222 fourth electrode
430 protection structure
451 first hole
452 second hole
E direction of light emergence
R direction of light receiving
Detailed Description
The concepts of the present invention are described below in terms of exemplary embodiments with reference to the drawings, in which like or similar elements are designated with the same reference numerals; moreover, the drawings are drawn to facilitate understanding, and the thickness and shape of layers in the drawings are not necessarily to scale or to scale.
Please refer to fig. 4A to 4G, which are schematic views of structures formed in steps of a manufacturing process of a photo-sensing package according to the present invention, so as to illustrate a photo-sensing package structure 40 according to an embodiment of the present invention.
Fig. 4A is a schematic bottom view of a conductive substrate 400, in the present invention, a first hole 451 and a second hole 452 of a photo-sensing package structure are directly formed in the conductive substrate 400 for a photo-sensing package manufacturing process. Fig. 4B is a cross-sectional view taken along line AA' in fig. 4A, illustrating a side configuration of the conductive substrate 400 used in the present embodiment; as shown in fig. 4B, the conductive substrate 400 has a plurality of sidewalls 401, a bottom 402, and a concave space 403 surrounded by the sidewalls 401 and the bottom 402. The bottom 402 has a first hole 451 and a second hole 452, in this embodiment, the first hole 451 is a light emitting hole, and the second hole 452 is a light receiving hole.
As shown in fig. 4C, according to requirements, the apertures of the first hole 451 and the second hole 452 may be respectively smaller than, larger than, or equal to the light emitting surface 410A of the light emitting device 410 and the light receiving surface 420A of the light receiving device 420 formed subsequently, so that the light beam of the light emitting device 410 passes through the second hole 451 and is absorbed by the light receiving device 420 through the second hole 452 after being reflected. The light emitting element 410 has a first width and the first hole 451 has a second width, the second width being smaller than the first width. The light receiving element 420 has a third width and the second hole 452 has a fourth width, and the fourth width is smaller than the third width. In the present invention, the conductive substrate 400 may be a ceramic substrate, a plastic substrate, an epoxy glass multi-layer substrate (FR4), a Bismaleimide-triazacyclo resin (BT) substrate, an aluminum substrate (MCPCB), or other substrates having conductive traces. The conductive substrate 400 has a corresponding designed conductive structure (not shown) therein for electrical connection.
As shown in fig. 4C, the light exit element 410 and the light exit element 420 are flip-chip mounted on the bottom 402 of the conductive substrate 400. The light emitting element 410 is a light emitting chip, for example: light emitting diode chip or laser chip. In the present embodiment, the light Emitting element 410 is a Vertical Cavity Surface Emitting Laser (VCSEL) chip for Emitting a Laser beam, and has a light Emitting Surface 410A facing the second hole 451 on the bottom 402; the light receiving element 420 is a Photo-Detector IC (PDIC) for absorbing light reflected by the laser beam emitted from the light emitting element 410 when encountering the object to be measured, and converting the light into an electrical signal, and has a light receiving surface 420A facing the second hole 452 on the bottom 402. In the present embodiment, the light emitting element 410 and the light receiving element 420 are both flip chips, wherein the light emitting element 410 has a first conductive structure 412 disposed on the light emitting surface 410A, and the light receiving element 420 has a second conductive structure 422 disposed on the light receiving surface 420A; the light emitting element 410 and the light receiving element 420 are respectively fixed to the bottom 402 of the conductive substrate 400 through the first conductive structure 412 and the second conductive structure 422, are disposed in the concave space 403, and are electrically connected to the conductive substrate 400 through the first conductive structure 412 and the second conductive structure 422 in a flip-chip manner. The first conductive structure 412 and the second conductive structure 422 may comprise a conductive material, such as platinum (Pt), nickel (Ni), gold (Au), or other conductive materials. In addition, the first conductive structure 412 and the second conductive structure 422 of the present embodiment are fixed on the conductive substrate 400 by conductive adhesives (not shown), that is, the conductive adhesives are located between the first conductive structure 412 and the conductive substrate 400, and the conductive adhesives are located between the second conductive structure 422 and the conductive substrate 400. The conductive adhesive may be solder paste, silver paste, or other adhesive material with conductivity. In the present embodiment, the light emitting device 410 has a first active region (not shown), and the first conductive structure 412 includes a first electrode 4121 and a second electrode 4122 respectively connected to regions of different conductivities in the light emitting device 410, for example, the first electrode 4121 is connected to the region having the conductivity P, the second electrode 4122 is connected to the region having the conductivity N, and the first electrode 4121 and the second electrode 4122 are located on the same side of the first active region, for example, on a side facing the conductive substrate 400. Similarly, the light receiving element 420 has a second active region (not shown), and the first conductive structure 422 includes a third electrode 4221 and a fourth electrode 4222 each connected to a region of different conductivity in the light receiving element 420, for example, the third electrode 4221 is connected to the region with conductivity P, the fourth electrode 4222 is connected to the region with conductivity N, and the third electrode 4221 and the fourth electrode 4222 are located on the same side of the second active region, for example, on the side facing the conductive substrate 400. In addition, in the present embodiment, the first active region of the light emitting element 410 has a first side and a second side opposite to each other, the first electrode 4121 and the second electrode 4122 are located on the first side, and the luminance of the light emitting element 410 emitted toward the first side is greater than the luminance emitted toward the second side, and the first side is closer to the light emitting surface 410A than the second side.
Next, as shown in fig. 4D, a glue material is filled in the concave space 403 to cover the light emitting element 410 and the light receiving element 420, so as to form a protection structure 430. After the structure shown in fig. 4D is inverted, the photo-sensing package structure 40 shown in fig. 4E is formed. A top view of the photo sensing package structure 40 is shown in fig. 4F, and a bottom view of the photo sensing package structure 40 is shown in fig. 4G.
Referring to fig. 4E again, the photo-sensing package structure 40 of the present invention includes: the light emitting element 410 has a light emitting surface 410A; a light-receiving element 420 having a light-receiving surface 420A; and a conductive substrate 400. The conductive substrate 400 has a plurality of sidewalls 401, a bottom 402, and a recess space 403 defined by the sidewalls 401 and the bottom 402; the light emitting element 410 and the light receiving element 420 are fixed in the concave space 403, and are electrically connected to a circuit (not shown) of the bottom portion 402 of the conductive substrate 400 through the first conductive structure 412 and the second conductive structure 422, respectively.
The first hole 451 and the second hole 452 respectively penetrate through the bottom 402 of the substrate 400, the first hole 451 corresponds to the light emitting surface 410A of the light emitting device 410, and the second hole 452 corresponds to the light receiving surface 420A of the light receiving device 420. In the embodiment, the light emitting device 410 is a VCSEL chip to emit a laser beam (as indicated by an arrow E) through the first hole 451, and after the laser beam encounters the object to be measured and is reflected, the laser beam is absorbed by the light receiving device 420 through the second hole 452, and the light receiving device 420 is a PDIC chip to absorb the reflected laser beam (as indicated by an arrow R), convert the absorbed laser beam into an electrical signal, and output the electrical signal to other external electronic devices for further processing, such as for sensing the object and measuring the distance. In one embodiment, as shown in FIG. 4F, the aperture of the second hole 452 is larger than that of the first hole 451, so as to increase the probability that the reflected laser beam passes through the second hole 452. In the present embodiment, the package structure 40 has a protection structure 430, which is formed by filling a protection adhesive material in the concave space 403 of the conductive substrate 400 to cover the light emitting element 410 and the light receiving element 420, wherein the protection structure 430 includes an insulating adhesive material, such as silicon gel (Silicone) or Epoxy resin (Epoxy resin). In one embodiment, the first hole 451 and the second hole 452 may be filled with a transparent material, such as a transparent Silicone (Silicone), an Epoxy resin (Epoxy resin), or a lens, to protect the light emitting element 410 and the light receiving element 420, respectively. In addition, the lens may also change the optical path of incident or emergent light, for example, condensing, diffusing, or collimating light.
In one embodiment, a bottom view of the photo-sensing package structure 40 is shown in fig. 4G. The conductive substrate 400 includes pins 400a 1-400 a6 on the bottom surface 400S, and the pins 400A3 and 400a4 are electrically connected to the light emitting element 410 through the first conductive structure 412 by a circuit layer (not shown) in the conductive substrate 400; the pins 400a1, 400a2 are electrically connected to the light receiving element 420 through the second conductive structure 422; the pins 400A5, 400A6 are used to electrically connect with other electronic components. In this embodiment, the photo-sensing package structure 40 can be electrically connected to a power supply and/or an external circuit through the pins 400a 1-400 a6 for introducing current to control the light emitting device 410, the light receiving device 420 and outputting electrical signals of the light receiving device 420.
Based on the foregoing, the present invention provides a novel photo-sensing package structure. According to the invention, the conductive substrate is directly used as a shielding structure between the light emitting element and the light receiving element in an inverted manner, so that the sensing packaging manufacturing process is simplified, the thickness of the packaging structure can be reduced, and the ultrathin photoelectric sensing packaging structure is realized.
In addition, the invention utilizes the flip chip in the photoelectric sensing packaging structure, and the flip chip does not need routing, so the space occupied by wires is saved, and the volume of the packaging structure can be further reduced. The distance between the light-emitting surface of the light-emitting element and the light-emitting hole of the packaging structure and the distance between the light-receiving surface of the light-receiving element and the light-receiving hole of the packaging structure are greatly reduced, so that the risk of light leakage can be obviously reduced; meanwhile, the light emitting element 110/210 and the light receiving element 120/220 are not required to be separated by black glue as shown in fig. 1B and fig. 2B, so that the effect of Zero crosstalk (Zero Cross-talk) can be achieved, and the efficiency of the photoelectric sensing package structure is further improved.
It should be noted that the foregoing embodiments of the present invention are provided only for illustrating the present invention and not for limiting the scope of the present invention. Various modifications and alterations of this invention will become apparent to those skilled in the art without departing from the spirit and scope of this invention. The same or similar components in different embodiments, or components denoted by the same reference numerals in different embodiments have the same physical or chemical characteristics. Furthermore, the above-described embodiments of the invention may be combined with or substituted for one another where appropriate and are not limited to the specific embodiments described above. The connection of certain components described in one embodiment with other components may be applied to other embodiments and fall within the scope of the invention as defined by the appended claims.
Claims (10)
1. A photoelectric sensing packaging structure is characterized by comprising:
a light emitting element having a light emitting surface;
a light receiving element having a light receiving surface; and
the substrate is provided with a bottom and a concave space, the bottom is provided with a first hole and a second hole, the light emitting element and the light receiving element are arranged in the concave space and fixedly connected to the bottom, and the light emitting element and the light receiving element are respectively and electrically connected to the substrate;
the first hole corresponds to the light emitting surface of the light emitting element, and the second hole corresponds to the light receiving surface of the light receiving element.
2. The photo-sensing package structure of claim 1, wherein the light-emitting element has a first conductive structure disposed on the light-emitting surface, the first conductive structure being connected to the bottom and electrically connected to the substrate.
3. The photo-sensing package structure of claim 1 or 2, further comprising a conductive paste between the first conductive structure and the substrate, the conductive paste comprising a conductive adhesive material, solder paste, silver paste, or a combination thereof.
4. The optical-electrical sensing package structure of claim 1, further comprising a protection structure disposed in the recess space and covering the light emitting element and the light receiving element.
5. The optical-electrical sensing package structure as claimed in claim 4, wherein the protection structure does not cover the light emitting surface or the light receiving surface.
6. The optical-electrical sensing package structure as claimed in claim 4, wherein the light-emitting element has a surface opposite to the light-emitting surface, and the protection structure covers the surface.
7. The optical-electrical sensing package structure as claimed in claim 2, wherein the first conductive structure is located between the light-emitting surface and the bottom.
8. The photo-sensing package structure of claim 1, wherein the second hole has an aperture larger than an aperture of the first hole.
9. The optical-electrical sensing package structure as claimed in claim 1, further comprising a transparent material or a lens disposed in the first hole and the second hole.
10. The photo-sensing package structure of claim 1, wherein in a cross-sectional view, the light emitting element has a first width and the first hole has a second width, the second width being smaller than the first width.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW109102393 | 2020-01-22 | ||
| TW109102393A TWI751480B (en) | 2020-01-22 | 2020-01-22 | Photoelectric sensor package structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113161334A true CN113161334A (en) | 2021-07-23 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110086640.9A Pending CN113161334A (en) | 2020-01-22 | 2021-01-22 | Photoelectric sensing packaging structure |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN113161334A (en) |
| TW (1) | TWI751480B (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101630707A (en) * | 2008-07-15 | 2010-01-20 | 先进开发光电股份有限公司 | Manufacturing method and packaging structure of optoelectronic element |
| KR20130008907A (en) * | 2011-07-13 | 2013-01-23 | 주식회사 에스앤에이 | Semiconductor package |
| US20150243824A1 (en) * | 2014-02-21 | 2015-08-27 | Maxim Integrated Products, Inc. | Optical sensor having a light emitter and a photodetector assembly directly mounted to a transparent substrate |
| JP2017079278A (en) * | 2015-10-21 | 2017-04-27 | スタンレー電気株式会社 | Light receiving/emitting device and light emitting device |
| TW201729432A (en) * | 2015-11-13 | 2017-08-16 | 日月光半導體製造股份有限公司 | Semiconductor package structures and method of manufacturing the same |
| US20180138099A1 (en) * | 2016-11-14 | 2018-05-17 | Advanced Semiconductor Engineering, Inc. | Semiconductor device package structure |
| JP2019111067A (en) * | 2017-12-22 | 2019-07-11 | 京セラ株式会社 | Optical sensor device |
-
2020
- 2020-01-22 TW TW109102393A patent/TWI751480B/en active
-
2021
- 2021-01-22 CN CN202110086640.9A patent/CN113161334A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101630707A (en) * | 2008-07-15 | 2010-01-20 | 先进开发光电股份有限公司 | Manufacturing method and packaging structure of optoelectronic element |
| KR20130008907A (en) * | 2011-07-13 | 2013-01-23 | 주식회사 에스앤에이 | Semiconductor package |
| US20150243824A1 (en) * | 2014-02-21 | 2015-08-27 | Maxim Integrated Products, Inc. | Optical sensor having a light emitter and a photodetector assembly directly mounted to a transparent substrate |
| JP2017079278A (en) * | 2015-10-21 | 2017-04-27 | スタンレー電気株式会社 | Light receiving/emitting device and light emitting device |
| TW201729432A (en) * | 2015-11-13 | 2017-08-16 | 日月光半導體製造股份有限公司 | Semiconductor package structures and method of manufacturing the same |
| US20180138099A1 (en) * | 2016-11-14 | 2018-05-17 | Advanced Semiconductor Engineering, Inc. | Semiconductor device package structure |
| JP2019111067A (en) * | 2017-12-22 | 2019-07-11 | 京セラ株式会社 | Optical sensor device |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202130076A (en) | 2021-08-01 |
| TWI751480B (en) | 2022-01-01 |
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