CN113150338A - Ultrathin polyimide film and preparation method thereof - Google Patents
Ultrathin polyimide film and preparation method thereof Download PDFInfo
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- CN113150338A CN113150338A CN202110397840.6A CN202110397840A CN113150338A CN 113150338 A CN113150338 A CN 113150338A CN 202110397840 A CN202110397840 A CN 202110397840A CN 113150338 A CN113150338 A CN 113150338A
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- 229920001721 polyimide Polymers 0.000 title claims abstract description 44
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 24
- 239000010703 silicon Substances 0.000 claims abstract description 24
- 239000011259 mixed solution Substances 0.000 claims abstract description 23
- 239000000243 solution Substances 0.000 claims abstract description 22
- 229920005575 poly(amic acid) Polymers 0.000 claims abstract description 18
- 239000002904 solvent Substances 0.000 claims abstract description 15
- 239000011521 glass Substances 0.000 claims abstract description 13
- 238000004528 spin coating Methods 0.000 claims abstract description 11
- 238000010438 heat treatment Methods 0.000 claims abstract description 9
- 238000007872 degassing Methods 0.000 claims abstract description 8
- 238000002156 mixing Methods 0.000 claims abstract description 6
- 238000007363 ring formation reaction Methods 0.000 claims abstract description 4
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 27
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 9
- HHVIBTZHLRERCL-UHFFFAOYSA-N sulfonyldimethane Chemical compound CS(C)(=O)=O HHVIBTZHLRERCL-UHFFFAOYSA-N 0.000 claims description 8
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 5
- 238000012545 processing Methods 0.000 claims description 5
- AVQQQNCBBIEMEU-UHFFFAOYSA-N 1,1,3,3-tetramethylurea Chemical compound CN(C)C(=O)N(C)C AVQQQNCBBIEMEU-UHFFFAOYSA-N 0.000 claims description 4
- 239000003292 glue Substances 0.000 claims description 4
- -1 γ -butyl lactone Chemical class 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 21
- 239000000463 material Substances 0.000 description 14
- 210000001519 tissue Anatomy 0.000 description 7
- 235000010724 Wisteria floribunda Nutrition 0.000 description 5
- 238000005452 bending Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000003153 chemical reaction reagent Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 229920000052 poly(p-xylylene) Polymers 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 description 2
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 2
- 239000000017 hydrogel Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 206010061218 Inflammation Diseases 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 229920001486 SU-8 photoresist Polymers 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009692 acute damage Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000009693 chronic damage Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001727 in vivo Methods 0.000 description 1
- 230000004054 inflammatory process Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000003760 magnetic stirring Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000011664 nicotinic acid Substances 0.000 description 1
- 235000014366 other mixer Nutrition 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 238000002174 soft lithography Methods 0.000 description 1
- 210000004872 soft tissue Anatomy 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/18—Manufacture of films or sheets
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2379/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen, or carbon only, not provided for in groups C08J2361/00 - C08J2377/00
- C08J2379/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08J2379/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Micromachines (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
Abstract
The invention provides an ultrathin polyimide film and a preparation method thereof, wherein the preparation method comprises the following steps: adding a solvent into the polyamic acid solution, and fully mixing to form a mixed solution; degassing the mixed solution; spin-coating the mixed solution on the surface of a silicon wafer or a glass sheet to form a film; and (3) putting the silicon chip or the glass chip with the film in a spin coating mode into a vacuum furnace, exhausting air in the vacuum furnace, vacuumizing, heating the film, and enabling polyamic acid to perform cyclization reaction to form the ultrathin polyimide film. The thickness of the ultrathin polyimide film prepared by the invention is 200nm-1000nm, the preparation method is simple and stable, and the prepared nanoscale ultrathin polyimide film is suitable for all miniaturized implantable flexible devices prepared by MEMS (micro-electromechanical systems) processes.
Description
Technical Field
The invention relates to the field of biomedical sensors, in particular to an ultrathin polyimide film and a preparation method thereof.
Background
For biomedical implantable sensors, the following three characteristics need to be satisfied as much as possible: (1) the material selected for the implantable device will not substantially generate any chemical reaction except the normal function of the implantable device, otherwise the implantable device or the sensor itself will be damaged (2) to the utmost extent, and the smaller the implantable device is, the less acute or chronic damage is caused by the implantable device, and the less influence is exerted on the implanted human or animal. (3) The modulus of the material selected for the implanted sensor is as low as possible, the sensor can slightly move in vivo along with biological tissues after being implanted into a living body, and the material with the excessive modulus can cause the relative motion of the sensor and the tissues, so that the sensor rubs in the biological body for a long time to cause inflammatory reaction. With the continuous development of the MEMS technology, the traditional silicon-based process gradually transits to the processing of various substrate materials. For biomedical implantable devices, rigid silicon-based materials are prone to induce various rejection reactions after implantation due to their inherent higher modulus relative to soft tissue. The material with lower modulus, particularly the ultrathin micro flexible material is adopted as the base material of the implanted biosensor, so that the rejection reaction can be reduced, and the service life of the implanted device after implantation is prolonged to a great extent.
The search of the prior art finds that the following implanted flexible materials are mainly available at present: parylene, Polyimide, PDMS, SU8, hydrogel and silicone rubber. Hydrogel and silicon rubber are widely used in some bionic tissues and materials nowadays, but the two materials cannot be compatible with MEMS and integrated circuit processes, so that the preparation of some implanted miniaturized intelligent sensors is difficult to realize. PDMS is widely used in the biomedical field due to its good biocompatibility and transparency, and the most common patterning method is soft lithography, but this patterning process still has its processing limitation, and it is difficult to achieve micron-scale dimensions. The SU8 material can be patterned with high aspect ratio by photolithography process, but it is reported in literature that the material is likely to cause biological rejection after long-term implantation. The Parylene film can be formed into a film with the thickness of micron grade by adopting vacuum vapor deposition, has excellent dielectric property and meets the VI standard of the biomedical materials in the United states pharmacopoeia, but the Parylene film is not high-temperature resistant and is difficult to be compatible with the current integrated circuit process and silicon-based process in the preparation process. Polyimide has been widely used in integrated circuits and MEMS processes, has good dielectric properties, has a thermal decomposition temperature of 400 ℃ or higher, has proven to have good biocompatibility, and is widely used in tableware and medical instruments, generally, the thickness of these films is in the micrometer level, because the thinner the film is, the smaller the bending stiffness thereof is, the easier it is to attach to a curved surface and adapt to the dislocation of biological tissues, while the Polyimide film prepared by the conventional method (for example, a micrometer-level-thick film formed by directly spin-coating a solution of 50-70% polyamic acid such as N-methylpyrrolidone or N, N-dimethylacetamide or N, N-dimethylformamide on the surface of a silicon wafer, cannot be prepared, it is not suitable for the preparation of some miniature sensors and ultra-flexible film sensors.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide an ultrathin polyimide film and a preparation method thereof, and the prepared nano-grade polyimide film is suitable for an implanted micro-sensor or an ultra-flexible film device.
In a first aspect of the present invention, a method for preparing an ultra-thin polyimide film is provided, which comprises:
adding a solvent into the polyamic acid solution, and fully mixing to form a mixed solution;
degassing the mixed solution;
spin-coating the mixed solution on the surface of a silicon wafer or a glass sheet to form a film;
and putting the silicon chip or the glass chip with the film in a spin coating mode into a vacuum furnace, exhausting air in the vacuum furnace, vacuumizing, and heating the film to enable polyamic acid to perform cyclization reaction to form the ultrathin polyimide film.
The above-mentioned sufficient mixing can be performed by stirring with a glass rod or magnetic stirring or by uniformly mixing the solvent in the polyamic acid solution using other mixer, mainly for the purpose of uniformly distributing the added solvent and polyamic acid in the container.
Preferably, the thickness of the ultrathin polyimide film is 200nm-1000 nm.
Preferably, the mass percentage concentration of the polyamic acid solution is 20-50%.
Preferably, the volume ratio of the polyamic acid solution to the solvent is 5: 1-1: 1.
preferably, the solvent is selected from one or more of N-methylpyrrolidone (N-methylpyrrolidinone NMP), N-dimethylacetamide (N, N-dimethyl acetamide DMAc), N-dimethylformamide (N, N-dimethyl formamide), tetramethylurea (tetramethylurea), gamma-butyl lactone (gamma-butyl lactone), and Dimethylsulfone (DMSO).
Preferably, after the mixed solution is spin-coated on the surface of a silicon wafer or a glass sheet to form a thin film, the method further comprises the following steps: and processing the spin-coated film into a film with a required plane pattern by adopting an MEMS (micro-electromechanical systems) process. Specifically, the whole spin-coated film is formed into a small film with a solid shape by using an MEMS technology, and the commonly adopted methods include MEMS processing technologies such as photolithography and dry etching.
Preferably, the mixed solution is degassed, wherein the mixed solution is placed in a vacuum dish, and the vacuum dish is vacuumized by a vacuum pump to a vacuum degree of less than 103Pa, and the holding time is not less than 3 minutes. The degassing was intended to remove the bubbles introduced into the polyamic acid solution during mixing.
Preferably, the mixed solution is spin-coated on the surface of a silicon wafer or a glass sheet to form a film, wherein the mixed solution is spread on the silicon wafer or the glass sheet with a polished surface by using a glue homogenizing machine; the rotating speed of the glue homogenizing machine is 1500-3000 r/min.
Preferably, the heating makes the polyamic acid generate cyclization reaction to form the ultrathin polyimide film, wherein the heating temperature is not lower than 200 ℃, and the heating time is not less than 1 hour.
The second aspect of the present invention provides an ultrathin polyimide film prepared by the above preparation method.
The traditional polyimide film preparation method is carried out in a mode of directly spin-coating a polyamic acid solution, but a polymer film with the thickness of less than 1 micron is difficult to prepare; the preparation method of the ultrathin polyimide film adopts corresponding reagents to dilute the polyamic acid solution according to different proportions, and adopts a spin coating method to spread the reagents dripped on the smooth surface at a certain rotating speed to form the film, so that the polymer film with the thickness of less than 1 micron is formed. Such films can greatly enhance the flexibility of materials and reduce damage to biological tissue in both bioworn and implanted devices.
Compared with the prior art, the invention has at least one of the following beneficial effects:
the preparation method of the invention improves the preparation process, namely, firstly, the solution of polyamide acid is diluted by a solvent, and then the diluted solution is spread into a film by a spin coating method at a certain rotating speed, and a reagent dripped on the smooth surface is spread into the film, so that a polyimide film with the nanometer thickness is obtained; and the obtained polyimide film has small bending rigidity, is easy to be attached to a curved surface to adapt to the dislocation of biological tissues, and is suitable for all miniaturized implanted flexible devices prepared by MEMS (micro-electromechanical systems) processes.
The preparation method has the advantages of simplicity and stability.
Drawings
Other features, objects and advantages of the invention will become more apparent upon reading of the detailed description of non-limiting embodiments with reference to the following drawings:
FIG. 1 is a step height measurement chart of an ultra-thin polyimide film prepared according to a preferred embodiment of the present invention;
fig. 2 is a process step diagram of a method for preparing an ultra-thin polyimide film according to a preferred embodiment of the present invention.
Detailed Description
The present invention will be described in detail below. The following examples will assist those skilled in the art in further understanding the invention, but are not intended to limit the invention in any way. It should be noted that variations and modifications can be made by persons skilled in the art without departing from the spirit of the invention. All falling within the scope of the present invention.
Example 1
The embodiment provides a preparation method of an ultrathin polyimide film, which comprises the following steps:
referring to FIG. 2 (1), 5ml of Fuji Durimide7505 solution was taken and poured into a measuring cylinder.
Referring to (2) of FIG. 2, 5ml of N-methylpyrrolidinone (NMP) (N-methylpyrrolidone) was poured into the previous measuring cylinder, mixed in a vortex mixer for 2 minutes, and the mixed solution was mixed in a roller mixer for 5 minutes to sufficiently mix the added NMP solvent with Durimide7505 type solution.
Referring to (3) in FIG. 2, the measuring cylinder is placed in a vacuum dish and vacuum-pumped for degassing, and the vacuum degree is less than 103Pa, and the holding time is not less than 3 minutes.
Referring to (4) in fig. 2, the degassed mixed solution is spin-coated on the surface of a clean polished silicon wafer by using a spin coater, wherein the rotation speed of the spin coater is 3000 rpm and 30 seconds.
Referring to fig. 2 (5), the spin-coated silicon wafer was placed in a muffle furnace, heated at 350 ℃ for 1 hour while being raised for 40 minutes, and then cooled naturally.
After cooling, a polyimide film with a thickness of 300nm is formed on the surface of the silicon wafer, and the cross-sectional height of the film is tested by a step profiler and is shown in figure 1.
Example 2
The embodiment provides a preparation method of an ultrathin polyimide film, which comprises the following steps:
referring to FIG. 2 (1), 6ml of Fuji Durimide7505 solution was taken and poured into a measuring cylinder.
Referring to (2) of FIG. 2, 4ml of N-methylpyrrolidinone (NMP) (N-methylpyrrolidone) was poured into the previous measuring cylinder, mixed in a vortex mixer for 2 minutes, and the mixed solution was mixed in a roller mixer for 5 minutes to sufficiently mix the N-methylpyrrolidinone solvent with the Fuji Durimide7505 solution.
Referring to (3) in FIG. 2, the measuring cylinder is placed in a vacuum dish and vacuum-pumped for degassing, and the vacuum degree is less than 103Pa, and the holding time is not less than 3 minutes.
Referring to (4) in fig. 2, the degassed solution is spin-coated on the surface of the clean polished silicon wafer by using a spin coater, wherein the rotation speed of the spin coater is 3000 rpm and 30 seconds.
Referring to fig. 2 (5), the spin-coated silicon wafer was placed in a muffle furnace, heated at 350 ℃ for 1 hour while being raised for 40 minutes, and then cooled naturally.
And after cooling, forming a polyimide film with the thickness of 500nm on the surface of the silicon wafer.
Example 3
The embodiment provides a preparation method of an ultrathin polyimide film, which comprises the following steps:
referring to FIG. 2 (1), 8ml of Fuji Durimide7505 solution was taken and poured into a measuring cylinder.
Referring to (2) of fig. 2, 2ml of N-methylpyrrolidinone (nmp) (N-methylpyrrolidone) was poured into the previous measuring cylinder, mixed in a vortex mixer for 2 minutes, and the mixed solution was mixed in a roller mixer for 5 minutes to sufficiently mix the N-methylpyrrolidinone solvent with the fuji Durimide7505 solution.
Referring to (3) in FIG. 2, the measuring cylinder is placed in a vacuum dish and vacuum-pumped for degassing, and the vacuum degree is less than 103Pa, and the holding time is not less than 3 minutes.
Referring to (4) in fig. 2, the degassed solution is spin-coated on the surface of the clean polished silicon wafer by using a spin coater, wherein the rotation speed of the spin coater is 3000 rpm and 30 seconds.
Referring to fig. 2 (5), the spin-coated silicon wafer was placed in a muffle furnace, heated at 180 ℃ for 1 hour for 30 minutes, heated at 250 ℃ for 6 hours after 4 hours, and then cooled naturally.
And after cooling, forming a polyimide film with the thickness of 1000nm on the surface of the silicon wafer.
In the preparation method of the above embodiment of the present invention, the solvent may be N-methylpyrrolidone, and the solvent of the above embodiment may be replaced with one or a mixture of two or more of N, N-dimethylacetamide, N-dimethylformamide, tetramethylurea, γ -butyl lactone, and dimethylsulfone. The embodiment can obtain the polyimide film with the nanometer-scale thickness, the obtained polyimide film has small bending rigidity, is easy to be attached to a curved surface to adapt to the dislocation of biological tissues, and is suitable for all miniaturized implanted flexible devices prepared by MEMS (micro-electromechanical systems) processes.
While the present invention has been described in detail with reference to the preferred embodiments, it should be understood that the above description should not be taken as limiting the invention. Various modifications and alterations to this invention will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the invention should be determined from the following claims.
Claims (10)
1. A preparation method of an ultrathin polyimide film is characterized by comprising the following steps:
adding a solvent into the polyamic acid solution, and fully mixing to form a mixed solution;
degassing the mixed solution;
spin-coating the mixed solution on the surface of a silicon wafer or a glass sheet to form a film;
and putting the silicon chip or the glass chip with the film in a spin coating mode into a vacuum furnace, exhausting air in the vacuum furnace, vacuumizing, and heating the film to enable polyamic acid to perform cyclization reaction to form the ultrathin polyimide film.
2. The method of preparing an ultra-thin polyimide film according to claim 1, wherein the ultra-thin polyimide film has a thickness of 200nm to 1000 nm.
3. The method for preparing an ultrathin polyimide film according to claim 1, wherein the mass percentage concentration of the polyamic acid solution is 20 to 50%.
4. The method for preparing an ultrathin polyimide film according to claim 3, wherein the volume ratio of the polyamic acid solution to the solvent is 5: 1-1: 1.
5. the method for preparing an ultrathin polyimide film as claimed in claim 1, wherein the solvent is one or a mixture of two or more of N-methylpyrrolidone, N-dimethylacetamide, N-dimethylformamide, tetramethylurea, γ -butyl lactone, and dimethylsulfone.
6. The method for preparing an ultrathin polyimide film according to claim 1, wherein after the step of spin-coating the mixed solution on the surface of a silicon wafer or a glass plate to form a film, the method further comprises the following steps: and processing the spin-coated film into a film with a required plane pattern by adopting an MEMS (micro-electromechanical systems) process.
7. The method of preparing an ultra-thin polyimide film according to any one of claims 1 to 6, wherein the degassing is performed on the mixed solution, wherein the mixed solution is placed in a vacuum pan, and the vacuum pan is evacuated by a vacuum pump to a degree of vacuum of less than 103Pa, and the holding time is not less than 3 minutes.
8. The method for preparing the ultrathin polyimide film according to any one of claims 1 to 6, wherein the mixed solution is spin-coated on the surface of a silicon wafer or a glass sheet to form a film, wherein the mixed solution is spread on the surface-polished silicon wafer or glass sheet by using a glue homogenizer; the rotating speed of the glue homogenizing machine is 1500-3000 r/min.
9. The method of any one of claims 1 to 6, wherein the heating is performed to cyclize the polyamic acid to form the ultra-thin polyimide film, wherein the heating temperature is not lower than 200 ℃ and the heating time is not less than 1 hour.
10. An ultrathin polyimide film characterized by being produced by the method for producing an ultrathin polyimide film according to any one of claims 1 to 9.
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CN113773540A (en) * | 2021-09-28 | 2021-12-10 | 西北工业大学 | Polyimide film, preparation method and application thereof |
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Cited By (2)
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